JPH07182885A - 半導体記憶装置 - Google Patents
半導体記憶装置Info
- Publication number
- JPH07182885A JPH07182885A JP314394A JP314394A JPH07182885A JP H07182885 A JPH07182885 A JP H07182885A JP 314394 A JP314394 A JP 314394A JP 314394 A JP314394 A JP 314394A JP H07182885 A JPH07182885 A JP H07182885A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- protect
- signal
- command
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 230000015654 memory Effects 0.000 claims abstract description 113
- 238000001514 detection method Methods 0.000 claims abstract description 18
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 19
- 230000006378 damage Effects 0.000 abstract description 2
- 230000008569 process Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 20
- 230000008859 change Effects 0.000 description 9
- 230000007257 malfunction Effects 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 101100409672 Arabidopsis thaliana PBB1 gene Proteins 0.000 description 4
- 101100409673 Arabidopsis thaliana PBB2 gene Proteins 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000002784 hot electron Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- NSMXQKNUPPXBRG-SECBINFHSA-N (R)-lisofylline Chemical compound O=C1N(CCCC[C@H](O)C)C(=O)N(C)C2=C1N(C)C=N2 NSMXQKNUPPXBRG-SECBINFHSA-N 0.000 description 1
- 101000666730 Homo sapiens T-complex protein 1 subunit alpha Proteins 0.000 description 1
- 102100038410 T-complex protein 1 subunit alpha Human genes 0.000 description 1
- 241001125929 Trisopterus luscus Species 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
Landscapes
- Engineering & Computer Science (AREA)
- Computer Security & Cryptography (AREA)
- Read Only Memory (AREA)
- Storage Device Security (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/191,334 US5381369A (en) | 1993-02-05 | 1994-02-03 | Nonvolatile semiconductor memory device using a command control system |
| DE69423988T DE69423988T9 (de) | 1993-02-05 | 1994-02-04 | Nichtflüchige Halbleiterspeicheranordnung mit Befehlssteuerungssystem |
| EP94101716A EP0609893B1 (en) | 1993-02-05 | 1994-02-04 | Nonvolatile semiconductor memory device using a command control system |
| KR1019940002159A KR960005357B1 (ko) | 1993-02-05 | 1994-02-05 | 반도체 기억장치 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5-18277 | 1993-02-05 | ||
| JP1827793 | 1993-02-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07182885A true JPH07182885A (ja) | 1995-07-21 |
Family
ID=11967154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP314394A Pending JPH07182885A (ja) | 1993-02-05 | 1994-01-17 | 半導体記憶装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH07182885A (ko) |
| KR (1) | KR960005357B1 (ko) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6000004A (en) * | 1996-10-23 | 1999-12-07 | Sharp Kabushiki Kaisha | Nonvolatile semiconductor memory device with write protect data settings for disabling erase from and write into a block, and erase and re-erase settings for enabling write into and erase from a block |
| JP2006277785A (ja) * | 2005-03-28 | 2006-10-12 | Toshiba Corp | 不揮発性半導体記憶装置 |
| US7310277B2 (en) | 2004-04-28 | 2007-12-18 | Matsushita Electric Industrial Co., Ltd. | Non-volatile semiconductor storage device with specific command enable/disable control signal |
| JP2009116448A (ja) * | 2007-11-02 | 2009-05-28 | Spansion Llc | 不揮発性記憶装置およびその制御方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100659502B1 (ko) * | 2005-02-04 | 2006-12-20 | 삼성전자주식회사 | 플래쉬 셀로 구현한 퓨즈 어레이 회로 |
-
1994
- 1994-01-17 JP JP314394A patent/JPH07182885A/ja active Pending
- 1994-02-05 KR KR1019940002159A patent/KR960005357B1/ko not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6000004A (en) * | 1996-10-23 | 1999-12-07 | Sharp Kabushiki Kaisha | Nonvolatile semiconductor memory device with write protect data settings for disabling erase from and write into a block, and erase and re-erase settings for enabling write into and erase from a block |
| US7310277B2 (en) | 2004-04-28 | 2007-12-18 | Matsushita Electric Industrial Co., Ltd. | Non-volatile semiconductor storage device with specific command enable/disable control signal |
| JP2006277785A (ja) * | 2005-03-28 | 2006-10-12 | Toshiba Corp | 不揮発性半導体記憶装置 |
| JP2009116448A (ja) * | 2007-11-02 | 2009-05-28 | Spansion Llc | 不揮発性記憶装置およびその制御方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR960005357B1 (ko) | 1996-04-24 |
| KR940020426A (ko) | 1994-09-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20050118 |