JPH0714806A - Semiconductor integrated circuit device - Google Patents

Abstract

PURPOSE:To avoid either the uneven film thickness at the parts near scribe line or the cracking reaching semiconductor elements in the dicing step by a method wherein a part of the scribe line, the films formed in the manufacturing step are entirely removed while the residual parts are made flush with the inactive regions in the semiconductor element. CONSTITUTION:In order to manufacture a semiconductor integrated circuit, within a scribe line region 1 corresponding to the boundary of respective element formation regions 2, the regions 4 wherein the films to be formed in the manufacturing step i.e., a LOCOS oxide film 6, a layer insulating film 7, an interwiring layer 8 and a passivation film 9, etc., are entirely etched away in the width of e.g. about 50mum, and are formed in parallel with the scribe line at the interval of e.g. about 50mum in two rows. Through these procedures, either the running phenomenon of the liquid film used in the manufacturing step into the scribe line or the cracking in the element formation regions 2 in the dicing step can be avoided.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit device having a multi-layer wiring structure, and more particularly, to uniform coating in a resist coating step of photolithography technique and an SOG film coating step used for flattening a wiring interlayer film. Technology to gain sex.

[0002]

2. Description of the Related Art Conventionally, as shown in FIG. 3, a scribe line in a semiconductor integrated circuit device is manufactured in a manufacturing process such that a silicon substrate is exposed in order to prevent a crack in a semiconductor chip which occurs during dicing. The formed film is uniformly removed by etching, or it is formed by removing the specific film only and etching it uniformly so that the step difference is lower than that of the semiconductor chip portion. Further, in this conventional method, the liquid flows along the scribe line during the formation of the resist or the liquid insulating film, that is, in the step of forming the film by coating due to the above-mentioned step, so that the film is extremely formed in the peripheral portion of the semiconductor chip. Since it causes non-uniformity of film thickness such as thinning,
As a countermeasure, there is also a method of not providing a scribe line.

[0003]

In the above-mentioned conventional scribe line structure, as described in the section of the prior art,
Non-uniformity of the film thickness occurs in the process of forming the film by the method using spin coating.

Further, in the method without the scribe line,
There is a risk of cracks during dicing on the semiconductor chip (element formation region).

An object of the present invention is to prevent a film thickness unevenness that occurs near the scribe line in a liquid film used in a manufacturing process of a semiconductor integrated circuit device and to obtain a uniform film thickness, and to prevent cracks during dicing. An object of the present invention is to provide a semiconductor integrated circuit capable of preventing a semiconductor from reaching a semiconductor element.

[0006]

In the semiconductor integrated circuit device of the present invention, a scribe line is selectively formed, and as a structure of the scribe line, a region where all the films formed in the manufacturing process are removed is
There are two rows on the scribe line with a constant width of 10 μm or less, parallel to the scribe line and at an interval of the dicing width or more, or the region where the film formed in the manufacturing process is completely removed is the same as the scribe line. The film is formed to have a width and is separated into two or more regions by a film formed in one side of the element formation pellet by a manufacturing process.

[0007]

The present invention will be described below with reference to the drawings. FIG. 1 is a plan view showing an embodiment of the present invention and its A-
It is sectional drawing of the A line part. When a semiconductor integrated circuit is manufactured by the existing method, a film formed in the manufacturing process, that is, the LOCOS oxide film 6, in the scribe line region 1 that corresponds to the boundary of each element formation region (semiconductor pellet) 2.
The region 4 where the interlayer insulating film 7, the wiring interlayer insulating film 8 and the passivation film 9 are all removed by etching has a width of several μm, for example, about 5 μm, and is parallel to the scribe line and at a distance of, for example, about 50 μm which is equal to or larger than the dicing width. Form two rows.

In the scribe line formed by this method, there occurs a phenomenon that a liquid film used in the manufacturing process, for example, a resist film or an SOG film, flows from the end of the element forming region to the scribe line during coating. In addition, a uniform film thickness can be obtained. In addition, since the region 4 where the film is entirely etched is provided in parallel with the scribe line, no crack is generated in the element forming region (semiconductor pellet) 2 during dicing.

FIG. 2 is a plan view showing another embodiment of the present invention. Similar to the first embodiment, when a semiconductor integrated circuit is manufactured by the existing method, in the scribe line region 1, the region 4 in which the film formed in the manufacturing process is entirely etched has the same width as the scribe line width. , For example, with a width of 150 μm, they are formed separately. At this time, the width of the region 3, which is the isolation region, in which all of the film formed in the manufacturing process remains is not required to be constant.

In the case of the present embodiment, the flow of the liquid film can be more effectively prevented and the uniform film thickness can be easily obtained, as compared with the first embodiment.

Further, in the scribe line region, since the film formed in the manufacturing process is completely removed by etching except the narrow isolation region, cracks do not reach the semiconductor element during dicing.

[0012]

As described above, according to the present invention, by changing the scribe line structure, the liquid film used in the manufacturing process, for example, the resist film, the SOG film, and the polyimide film is formed as an element when the film is formed (at the time of coating). Since a phenomenon such as flowing from the edge of the region to the scribe line does not occur and a uniform film thickness can be obtained, an abnormal width may occur in the element pattern near the scribe line, or an abnormal film thickness may occur, resulting in a reliability problem. Disappear.

Further, in the structure of the scribe line according to the present invention, there is no risk of cracks in the semiconductor chip during dicing.

[Brief description of drawings]

FIG. 1 is a plan view of an essential part of an embodiment of the present invention and its A-
It is sectional drawing of the A line.

FIG. 2 is a plan view of an essential part of another embodiment of the present invention.

FIG. 3 is a plan view showing a scribe line region of a conventional semiconductor integrated circuit.

[Explanation of symbols]

 1 scribe line region 2 element forming region (semiconductor pellet) 3 region where all formed film is left 4 region where all formed film is etched 5 silicon substrate 6 oxide film 7 interlayer insulating film 8 wiring interlayer insulating film 9 passivation film

Claims (3)

[Claims] 1. In a scribe line structure of a semiconductor integrated circuit device, a part of the scribe line is formed by removing the film formed in the manufacturing process, and the remaining part is the same as the inactive region in the semiconductor element. A semiconductor integrated circuit device characterized by being the height of the semiconductor integrated circuit device. 2. A region in which all the film formed in the manufacturing process is removed is present in two rows on the scribe line with a constant width of 10 μm or less, parallel to the scribe line, and at regular intervals. Integrated circuit device. 3. A region in which all the film formed in the manufacturing process is removed is formed to have the same width as the scribe line and is divided into two or more regions within one side of the element forming pellet. A characteristic semiconductor integrated circuit device.