JPH067599B2 - Photovoltaic device and manufacturing method thereof - Google Patents
Photovoltaic device and manufacturing method thereofInfo
- Publication number
- JPH067599B2 JPH067599B2 JP60230552A JP23055285A JPH067599B2 JP H067599 B2 JPH067599 B2 JP H067599B2 JP 60230552 A JP60230552 A JP 60230552A JP 23055285 A JP23055285 A JP 23055285A JP H067599 B2 JPH067599 B2 JP H067599B2
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- electrode
- photovoltaic
- insulator
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000004020 conductor Substances 0.000 claims description 40
- 239000012212 insulator Substances 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
- H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は複数の光起電力素子を直列接続してなる光起電
力装置及びその製造方法に関するものである。TECHNICAL FIELD The present invention relates to a photovoltaic device in which a plurality of photovoltaic elements are connected in series and a method for manufacturing the same.
通常この種の光起電力装置は第３図（イ），（ロ）に示
す如く構成されている。第３図（イ）従来の光起電力装
置の断面構造図、第３図（ロ）は同じく平面図であり、
透光性絶縁基板21上に透明電極22，p-i-n接合型或いはn
-i-p接合型の非晶質半導体層25、裏面電極26をこの順序
に積層形成して構成される光起電力素子Ａ，Ｂ…のうち
相隣する一方の光起電力素子Ａの裏面電極26を他方の光
起電力素子Ｂの透明電極22上に形成した条状の導電体23
と接続し、またこの導電体23自体はこれと平行に形成し
た同じく条状の絶縁体24にて当該他方の光起電力素子Ｂ
の透明電極22、非晶質半導体層25と遮断状態に維持して
光起電力素子Ａ，Ｂ，…を相互に直列接続する構成が採
られている。ところでこのような光起電力装置の製造は
従来第４図（イ），（ロ）に示す如くに行われている。Usually, this type of photovoltaic device is constructed as shown in FIGS. 3 (a) and 3 (b). FIG. 3 (a) is a sectional structure view of a conventional photovoltaic device, and FIG. 3 (b) is a plan view of the same.
Transparent electrode 22, pin junction type or n on transparent insulating substrate 21
-ip junction type amorphous semiconductor layer 25 and back surface electrode 26 are laminated in this order to form a back surface electrode 26 of one of the adjacent photovoltaic elements A, B ... On the transparent electrode 22 of the other photovoltaic element B.
The conductor 23 itself is connected to the other photovoltaic element B by a strip-shaped insulator 24 formed in parallel therewith.
The transparent electrode 22, the amorphous semiconductor layer 25 and the photovoltaic elements A, B, ... By the way, such a photovoltaic device is conventionally manufactured as shown in FIGS. 4 (a) and 4 (b).
第４図（イ），（ロ）は従来方法の製造過程を示す模式
図であり、先ず第４図（イ）に示す如く透光性絶縁基板
21上に透明電極22を積層形成した後、この透明電極22を
各光起電力素子Ａ，Ｂを構成する領域毎に切断し、また
切断にて区分した各透明電極の一側縁近傍には切断溝に
沿って切断溝側に位置して条状の導電体23を、またこれ
と所要の間隔を隔てて透明電極の中心側寄りに位置して
同じく条状の絶縁体24を夫々並列形成する。4 (a) and 4 (b) are schematic views showing the manufacturing process of the conventional method. First, as shown in FIG. 4 (a), the translucent insulating substrate.
After the transparent electrode 22 is formed on the 21 by laminating, the transparent electrode 22 is cut into each region constituting each of the photovoltaic elements A and B, and one transparent electrode adjacent to one side edge is divided by cutting. A strip-shaped conductor 23 is formed along the cut groove, and a strip-shaped conductor 24 is formed in parallel with the strip-shaped conductor 23 at a predetermined distance from the transparent electrode. To do.
次いで第２図（ロ）に示す如く透明電極22、切断溝及び
導電体23、絶縁体24上にわたって非晶質半導体層25、裏
面電極26をこの順序で積層形成し、導電体23上に対して
断続的に、また絶縁体24上に対しては連続的に夫々破線
で示す如くに所要線幅のレーザビームを投射する。これ
によって導電体23上にあってはレーザビームが投射され
た部分では夫々スポット状に非晶質半導体層25，裏面電
極26ともに穿孔され、非晶質半導体25は蒸散せしめら
れ、また裏面電極26は孔の周縁部が蒸散せしめられた非
晶質半導体層25の跡に垂れ下って導電体23と電気的に接
触状態で固化する。Next, as shown in FIG. 2B, an amorphous semiconductor layer 25 and a back electrode 26 are laminated in this order over the transparent electrode 22, the cutting groove and the conductor 23, and the insulator 24, and the amorphous semiconductor layer 25 and the back electrode 26 are formed on the conductor 23. A laser beam having a required line width is projected intermittently on the insulator 24 and continuously on the insulator 24 as indicated by a broken line. As a result, on the conductor 23, both the amorphous semiconductor layer 25 and the back electrode 26 are perforated in spots at the portions where the laser beam is projected, the amorphous semiconductor 25 is evaporated, and the back electrode 26 The peripheral edge of the hole hangs down to the trace of the evaporated amorphous semiconductor layer 25 and solidifies in electrical contact with the conductor 23.
一方、絶縁体24上にあってはレーザビームが連続的に投
射され、非晶質半導体層25，裏面電極26が共に破断さ
れ、非晶質半導体層25，裏面電極26共に蒸散せしめられ
るが、裏面電極26はその破断縁部が蒸散せしめられた非
晶質半導体層25の跡に垂れ下って絶縁体24上に接触状態
で固化する。On the other hand, on the insulator 24, a laser beam is continuously projected, both the amorphous semiconductor layer 25 and the back electrode 26 are broken, and both the amorphous semiconductor layer 25 and the back electrode 26 are evaporated. The back surface electrode 26 hangs down on the traces of the amorphous semiconductor layer 25 on which the fractured edge is evaporated, and solidifies in contact with the insulator 24.
これによって第３図（イ），（ロ）に示す如く非晶質半
導体層25，裏面電極26は夫々各光起電力素子毎に絶縁体
24上で切断され、且つ相隣する一方の光起電力素子にお
ける裏面電極26は導電体23を通じて他方の光起電力素子
における透明電極22と接続されて相隣する光起電力素子
は相互に直列接続された状態となる。As a result, as shown in FIGS. 3 (a) and 3 (b), the amorphous semiconductor layer 25 and the back electrode 26 are made of an insulating material for each photovoltaic element.
The back surface electrode 26 of one photovoltaic element that is cut on 24 and is adjacent to each other is connected to the transparent electrode 22 of the other photovoltaic element through the conductor 23, and the adjacent photovoltaic elements are in series with each other. It will be connected.
ところで上述した如き従来の製造方法であっては導電体
23上に対しては断続的に、また絶縁体24上に対しては連
続的に夫々レーザビームを投射する必要があって、加工
作業が煩わしいこと、また光起電力装置として、例えば
透明電極22，22間導電体23，絶縁体24下及びこれらに挟
まれた部分は実際上太陽電池等として機能しない無効部
分となるが、この導電体23，絶縁体24の幅寸法は裏面電
極26と導電体23とを確実に接触維持するため導電体23上
に対するレーザビームスポット径は30〜100μｍ、また
絶縁体24上にて相隣する光起電力素子の非晶半導体相2
5，裏面電極26を確実に絶縁維持するため絶縁体24上に
対するレーザビームの線幅は150μｍ程度に設定され、
更に導電体23と絶縁体24は相互の間に100〜200μｍ程度
の幅寸法を隔てて形成するため全体の無効部分は500〜7
00μｍ程度となり、無効部分の幅が大きいという問題も
あった。By the way, in the conventional manufacturing method as described above,
It is necessary to project the laser beam intermittently on the upper surface of the insulating layer 23 and continuously on the insulating body 24, which makes the processing operation troublesome, and as a photovoltaic device, for example, the transparent electrode 22. , 22 between the conductor 23 and the insulator 24, and the portion sandwiched therebetween are ineffective portions that do not actually function as a solar cell or the like. The laser beam spot diameter on the conductor 23 is 30 to 100 μm in order to maintain the contact with the body 23 reliably, and the amorphous semiconductor phase 2 of the photovoltaic element adjacent to each other on the insulator 24
5. The line width of the laser beam on the insulator 24 is set to about 150 μm in order to reliably maintain the insulation of the back electrode 26.
Further, since the conductor 23 and the insulator 24 are formed with a width dimension of about 100 to 200 μm therebetween, the total ineffective portion is 500 to 7 μm.
There is also a problem that the width of the ineffective portion is large, which is about 00 μm.
本発明はかかる事情に鑑みなされたものであって、その
目的とするところは、導電体と絶縁体との間に間隔を隔
てず相接した状態とすることによって、レーザスクライ
ブ加工等の作業が容易となることは勿論、無効部分の幅
寸法の狭小化も図れるようにした光起電力装置及びその
製造方法を提供するにある。The present invention has been made in view of such circumstances, and an object thereof is to perform a work such as laser scribing by setting a conductor and an insulator in contact with each other without a gap. It is an object of the present invention to provide a photovoltaic device and a method of manufacturing the photovoltaic device which can be made easier and can be made narrower in the width dimension of the ineffective portion.
本発明に係る光起電力装置は透光性絶縁基板上に透明電
極，非晶質半導体層，裏面電極をこの順序に積層形成し
てなる光起電力素子を直列接続して構成される光起電力
装置において、直列接続すべき相隣する光起電力素子の
うち、一方の光起電力素子の透明電極と、他方の光起電
力素子の裏面電極とを接続すべく前記一方の光起電力素
子の透明電極上に条状に形成された導電体と、該導電体
と前記一方の光起電力素子の非晶質半導体層，裏面電極
とを絶縁状態に隔てるべく前記導電体に対して、前記他
方の光起電力素子と反対側に接して条状に形成された絶
縁体とを具備することを特徴とする。A photovoltaic device according to the present invention is a photovoltaic device formed by serially connecting a photovoltaic element formed by laminating a transparent electrode, an amorphous semiconductor layer, and a back electrode in this order on a translucent insulating substrate. In the power device, among the adjacent photovoltaic elements to be connected in series, the one photovoltaic element for connecting the transparent electrode of one photovoltaic element and the back electrode of the other photovoltaic element The conductor formed in a strip shape on the transparent electrode, the conductor, the amorphous semiconductor layer of the one photovoltaic element, and the back surface electrode in order to separate the conductor from the conductor. The other photovoltaic element is provided in contact with the opposite side, and a strip-shaped insulator is provided.
以下本発明をその実施状態を示す図面に基づき具体的に
説明する。第１図（イ），（ロ）は本発明に係る光起電
力装置の要部を示す模式図であり、図中１はガラス等を
用いた透光性絶縁基板、２はSn０２，IT0/Sn０２等を用
いた透明電極，３はＡｌ，Ａｇ等を用いた導電体、４は
ガラス等を用いた絶縁体、５はアモルファスシリコン等
を用いたp-i-n接合型、又はn-i-p接合型の非晶質半導体
層、６はＡｌ等の裏面電極を示している。共通の透光性
絶縁基板１上に各光起電力素子Ａ，Ｂ…が形成されてお
り、各光起電力素子Ａ，Ｂ，…は前記した共通の透光性
絶縁基板１上に夫々透明電極２を形成し、その上に部分
的に導電体３，絶縁体４を相接した状態に隣接形成した
後、これらの表面に非晶質半導体層５，裏面電極６をこ
の順序に積層形成し、レーザビームの投射によって非晶
質半導体層５，裏面電極６を夫々各光起電力素子Ａ，Ｂ
…毎に分断して絶縁体４に相互に電気的に遮断すると共
に、相隣する光起電力素子Ａ，Ｂ…のうち一方の光起電
力素子Ａの裏面電極６は他の光起電力素子Ｂ上の導電体
３を介してその透明電極２と接続せしめて、光起電力素
子Ａ，Ｂ，…を相互に直列接続せしめてある。Hereinafter, the present invention will be specifically described with reference to the drawings showing its implementation state. Figure 1 (a), (b) is a schematic view showing an essential part of the photovoltaic device according to the present invention, the translucent insulating substrate using the reference numeral 1 is a glass or the like, the 2 Sn0 2, IT0 / Sn0 transparent electrode using a 2, etc., 3 Al, conductors with Ag or the like, an insulator using glass or the like 4, 5 pin junction type using amorphous silicon, etc., or nip junction type non A crystalline semiconductor layer 6 indicates a back electrode made of Al or the like. The photovoltaic elements A, B, ... Are formed on the common transparent insulating substrate 1, and the photovoltaic elements A, B, ... Are transparent on the common transparent insulating substrate 1 described above. An electrode 2 is formed, and a conductor 3 and an insulator 4 are partially formed on the electrode 2 so as to be adjacent to each other, and then an amorphous semiconductor layer 5 and a back electrode 6 are laminated in this order on the surface of these electrodes. Then, the amorphous semiconductor layer 5 and the back surface electrode 6 are formed on the respective photovoltaic elements A and B by projecting a laser beam.
Each of the photovoltaic elements A and B are separated from each other and electrically insulated from each other, and the back electrode 6 of one of the adjacent photovoltaic elements A, B is the other photovoltaic element A. , Are connected to the transparent electrode 2 through the conductor 3 on B, and the photovoltaic elements A, B, ... Are connected in series with each other.
次にこのような光起電力装置の製造方法を第２図
（イ），（ロ）に基づき説明する。Next, a method of manufacturing such a photovoltaic device will be described with reference to FIGS.
先ず第２図（イ）に示す如く、ガラス等を用いて形成し
た共通の透光性絶縁基板１上にSnＯ２，或いはIT0/SnＯ
２等を材料とする透明電極２を全面に積層形成した後、
レーザスクライブによって透明電極２を各光起電力素子
Ａ，Ｂ…を形成する領域毎に切断分離すると共に、分離
し各透明電極２，２上には切断溝に沿わせて一側縁の全
長にわたるように導電体３及び絶縁体４を相接した状態
で並列形成せしめる。First, as shown in FIG. 2 (a), SnO 2 or IT0 / SnO is formed on a common translucent insulating substrate 1 formed of glass or the like.
After the transparent electrode 2 made of 2 etc. is laminated on the entire surface,
The transparent electrode 2 is cut and separated by laser scribing into each region where the photovoltaic elements A, B ... Are formed, and the separated and separated transparent electrodes 2 and 2 are extended along one side edge along the cutting groove. As described above, the conductor 3 and the insulator 4 are formed in parallel while being in contact with each other.
この導電体３，絶縁体４の形成は、例えばＡｇを主体と
する導電体ペースト、ガラスを主体とする絶縁体ペース
トを従来知られたペン描画法等に透明電極２上に条状に
付着させた後、これを焼成することによって形成され
る。The conductors 3 and the insulators 4 are formed by, for example, applying a conductor paste mainly composed of Ag or an insulator paste mainly composed of glass onto the transparent electrode 2 in a stripe shape by a conventionally known pen drawing method or the like. After that, it is formed by firing.
次いで透明電極２上、透明電極２，２間の切断部に露出
する透光性絶縁基板１及び導電体３，絶縁体４上にわた
ってp-i-n接合型、或いはn-i-p接合型の非晶質半導体層
５及びＡｌ，Ｔｉ，Ａｇ製の裏面電極６がこの順序で所
要厚さに積層形成する。Next, a pin junction type or nip junction type amorphous semiconductor layer 5 is formed over the transparent electrode 2, the transparent insulating substrate 1 exposed on the cut portion between the transparent electrodes 2 and 2, the conductor 3 and the insulator 4. The back electrode 6 made of Al, Ti, Ag is laminated in this order to a required thickness.
そして最後に第２図（ロ）に破線で示す如く、導電体
３，絶縁体４の両者にわたるように線幅100〜150μｍの
レーザビームを投射し、これらの上の非晶質半導体層
５，裏面電極６を蒸散せしめて分断すると共に、この分
断された裏面電極６の縁部を溶融状態で垂れ下らせて夫
々導電体３，絶縁体４表面に接触状態で固化せしめる。Finally, as shown by a broken line in FIG. 2B, a laser beam having a line width of 100 to 150 μm is projected so as to cover both of the conductor 3 and the insulator 4, and the amorphous semiconductor layer 5 and the amorphous semiconductor layer 5 above them are projected. The rear surface electrode 6 is evaporated and divided, and the divided rear surface electrode 6 hangs down in a molten state to be solidified in contact with the surfaces of the conductor 3 and the insulator 4, respectively.
これによって相隣する光起電力素子における非晶質半導
体層５，裏面電極６は夫々導電体３、絶縁体４上にて相
互に分断され、且つ一方の光起電力素子の裏面電極６の
他方の光起電力素子における導電体３を介して透明電極
２と電気的に接続せしめられて、各光起電力素子が直列
接続された光起電力装置が構成されることとなる。As a result, the amorphous semiconductor layer 5 and the back surface electrode 6 of adjacent photovoltaic elements are separated from each other on the conductor 3 and the insulator 4, respectively, and the other side of the back surface electrode 6 of one photovoltaic element is separated. By being electrically connected to the transparent electrode 2 via the conductor 3 in the photovoltaic element, the photovoltaic device in which the photovoltaic elements are connected in series is configured.
上述した如く本発明方法にあっては導電体と絶縁体とを
相隣せしめて形成し、この上に非晶質半導体層、裏面電
極を積層形成してこれを導電体、絶縁体上にて同時的に
切断せしめると共に導電体上の裏面電極の縁部を導電体
と電気的に接触せしめた状態とすることが出来、レーザ
による加工が一回で済むこととなり、加工が簡略化さ
れ、また導電体と絶縁体とを相互に接触せしめて形成す
るから相互の間の無効領域を除去することが出来て無効
面積の狭小化も図れるなど本発明は優れた効果を奏する
ものである。As described above, in the method of the present invention, the conductor and the insulator are formed adjacent to each other, and the amorphous semiconductor layer and the back electrode are laminated on the conductor and the insulator. It is possible to cut simultaneously and make the edge of the back surface electrode on the conductor electrically contact with the conductor, which means that the laser processing only needs to be done once, and the processing is simplified. Since the conductor and the insulator are formed by bringing them into contact with each other, the ineffective region between them can be removed, and the ineffective area can be narrowed. Therefore, the present invention has excellent effects.
第１図（イ）は本発明装置の断面構造図、第１図（ロ）
は同じくその平面図、第２図（イ），（ロ）は本発明装
置の製造過程を示す模式的縦断面図、第３図（イ）は従
来装置の断面構造図、第３図（ロ）は同じくその平面
図、第４図（イ），（ロ）は従来方法の製造過程を示す
模式的縦断面図である。 １…透光性絶縁基板 ２…透明電極 ３…導電体
４…絶縁体 ５…非晶質半導体層 ６…裏面電極FIG. 1 (a) is a sectional structural view of the device of the present invention, and FIG. 1 (b).
Is a plan view thereof, FIGS. 2 (a) and 2 (b) are schematic vertical sectional views showing the manufacturing process of the device of the present invention, and FIG. 3 (a) is a sectional structure view of a conventional device, and FIG. ) Is a plan view of the same, and FIGS. 4 (a) and 4 (b) are schematic vertical sectional views showing the manufacturing process of the conventional method. 1 ... Translucent insulating substrate 2 ... Transparent electrode 3 ... Conductor
4 ... Insulator 5 ... Amorphous semiconductor layer 6 ... Back electrode
Claims (2)
体層，裏面電極をこの順序に積層形成してなる光起電力
素子を直列接続して構成される光起電力装置において、
直列接続すべき相隣する光起電力素子のうち、一方の光
起電力素子の透明電極と、他方の光起電力素子の裏面電
極とを接続すべく前記一方の光起電力素子の透明電極上
に条状に形成された導電体と、該導電体と前記一方の光
起電力素子の非晶質半導体層，裏面電極とを絶縁状態に
隔てるべく前記導電体に対して、前記他方の光起電力素
子と反対側に接して条状に形成された絶縁体とを具備す
ることを特徴とする光起電力装置。1. A photovoltaic device comprising a transparent electrode, an amorphous semiconductor layer, and a back electrode laminated in this order on a translucent insulating substrate, the photovoltaic element being connected in series.
On the transparent electrode of the one photovoltaic element to connect the transparent electrode of the one photovoltaic element and the back electrode of the other photovoltaic element among the neighboring photovoltaic elements to be connected in series In order to isolate the conductor formed in a strip shape from the conductor and the amorphous semiconductor layer of the one photovoltaic element and the back electrode in an insulating state, the other photovoltaic A photovoltaic device comprising: a power element and an insulator formed in a strip shape in contact with the opposite side.
れを各光起電力素子を形成する領域毎に切断し、各切断
した透明電極上に切断部近傍に沿って相接した状態で条
状に導電体及び絶縁体を形成した後、導電体，絶縁体及
び各切断した透明電極上にわたって非晶質半導体層，裏
面電極をこの順序に積層形成し、前記導電体，絶縁体上
において、前記非晶質半導体層，裏面電極を溶融切断
し、導電体に相隣する他の光起電力素子の裏面電極を電
気的に接触せしめることを特徴とする光起電力装置の製
造方法。2. A transparent electrode is formed on a translucent insulating substrate, and the transparent electrode is cut in each region where each photovoltaic element is formed. The transparent electrodes are contacted with each other along the vicinity of the cut portion. After the conductor and the insulator are formed in a striped state, an amorphous semiconductor layer and a back electrode are laminated in this order over the conductor, the insulator, and each cut transparent electrode, and the conductor and the insulator are formed. In the above, a method for manufacturing a photovoltaic device, characterized in that the amorphous semiconductor layer and the back surface electrode are melt-cut, and the back surface electrode of another photovoltaic element adjacent to the conductor is brought into electrical contact. .
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60230552A JPH067599B2 (en) | 1985-10-15 | 1985-10-15 | Photovoltaic device and manufacturing method thereof |
| US06/891,733 US4726849A (en) | 1985-08-07 | 1986-07-29 | Photovoltaic device and a method of manufacturing thereof |
| CN86105984A CN1007103B (en) | 1985-08-07 | 1986-08-07 | Photovoltaic device and method of mfg. thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60230552A JPH067599B2 (en) | 1985-10-15 | 1985-10-15 | Photovoltaic device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6288371A JPS6288371A (en) | 1987-04-22 |
| JPH067599B2 true JPH067599B2 (en) | 1994-01-26 |
Family
ID=16909546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60230552A Expired - Lifetime JPH067599B2 (en) | 1985-08-07 | 1985-10-15 | Photovoltaic device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH067599B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3599648A1 (en) * | 2018-07-25 | 2020-01-29 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Photovoltaic device and method of manufacturing the same |
-
1985
- 1985-10-15 JP JP60230552A patent/JPH067599B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6288371A (en) | 1987-04-22 |
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| Date | Code | Title | Description |
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| EXPY | Cancellation because of completion of term |