JPH0653793U - Exhaust system equipment for semiconductor manufacturing - Google Patents
Exhaust system equipment for semiconductor manufacturingInfo
- Publication number
- JPH0653793U JPH0653793U JP7152292U JP7152292U JPH0653793U JP H0653793 U JPH0653793 U JP H0653793U JP 7152292 U JP7152292 U JP 7152292U JP 7152292 U JP7152292 U JP 7152292U JP H0653793 U JPH0653793 U JP H0653793U
- Authority
- JP
- Japan
- Prior art keywords
- exhaust
- rotor
- semiconductor manufacturing
- cleaning
- exhaust system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 52
- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 238000004140 cleaning Methods 0.000 claims abstract description 43
- 235000012431 wafers Nutrition 0.000 claims description 13
- 238000012545 processing Methods 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000012993 chemical processing Methods 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 7
- 230000005494 condensation Effects 0.000 abstract description 6
- 238000009833 condensation Methods 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 26
- 239000003921 oil Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 17
- 239000012530 fluid Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000012495 reaction gas Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000010687 lubricating oil Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Non-Positive Displacement Air Blowers (AREA)
- Drying Of Semiconductors (AREA)
Abstract
(57)【要約】 （修正有）
【目的】 真空側へ全くオイルを逆拡散させることな
く、そして排気装置中においてその排出ガスの凝縮が生
じて、その性能が低下する場合でも、その洗浄のために
例えば真空ポンプを製造ラインから取り外すことなく短
時間でその洗浄をなし凝縮物等を除去することのできる
半導体製造用の排気系装置を提供する。
【構成】 半導体製造装置の排気装置１において、上部
に吸気口９を持ち下部に排気口１０を持つチャンバ８内
に、外周に角ねじを備えそしてその上端が自由端となっ
ている片持構造の第１ロータ１７と、同様に形成され前
記第１ロータと噛み合う第２ロータ１８とを垂直に設け
て、前記各ロータを相互に逆行方向に回転すると共に排
気路と洗浄路に接続される分岐路を前記チャンバの吸気
口に接続し、前記排気路に排気系バルブ１２を設けそし
て前記洗浄路に洗浄系バルブ１３を設けた。
(57) [Summary] (Modified) [Purpose] Even if the performance of the exhaust gas is reduced due to condensation of the exhaust gas in the exhaust device without back diffusion of the oil to the vacuum side, the cleaning Therefore, for example, an exhaust system device for semiconductor manufacturing is provided which can be cleaned in a short time without removing the vacuum pump from the manufacturing line to remove condensate and the like. A cantilever structure in which, in an exhaust device 1 of a semiconductor manufacturing apparatus, a chamber 8 having an intake port 9 in an upper part and an exhaust port 10 in a lower part is provided with a square screw on an outer periphery and an upper end thereof is a free end. A first rotor 17 and a second rotor 18, which is similarly formed and meshes with the first rotor, are vertically provided to rotate the rotors in mutually reverse directions and to connect the exhaust passage and the cleaning passage. The passage was connected to the inlet of the chamber, the exhaust passage was provided with an exhaust system valve 12, and the cleaning passage was provided with a cleaning system valve 13.
Description
【０００１】[0001]
この考案は密閉室内に多数のシリコンのウエハ等を配置して、その各ウエハ等 の表面等に物理的又は化学的な処理・加工を加える半導体製造装置等で、その不 要ガス、反応副成ガス等を吸気し排気するために使用する半導体製造用の排気系 装置に関するもので、特に真空ポンプ側から高真空側、すなわち、ウエハ又は基 板等のある側へ、油分の逆拡散、逆吸着を生じさせることなく、そしてその真空 ポンプの性能を常時高く維持することのできる半導体製造用の排気系装置に関す るものである。 This invention is a semiconductor manufacturing apparatus or the like in which a large number of silicon wafers or the like are placed in a closed chamber and the surface or the like of each wafer or the like is subjected to physical or chemical processing or processing. This relates to an exhaust system device for semiconductor manufacturing that is used to inhale and exhaust gas, etc., especially from the vacuum pump side to the high vacuum side, that is, the side with a wafer or substrate etc. The present invention relates to an exhaust system device for semiconductor manufacturing that can maintain the high performance of the vacuum pump at all times without causing the above.
【０００２】[0002]
従来、密閉室内に多数のシリコン（Ｓｉ）のウエハ等を配置してその各ウエハ 等の表面等に物理的又は化学的な処理・加工を加える半導体製造装置等でその処 理・加工の後で不要となり、そして加工・処理においてむしろ有害となった残留 ガス、反応副成ガス等の排気方式には例えば、（１）油回転真空ポンプによる方 法、（２）ルーツ型多段ポンプ等による方法がある。 前者の方法はケース内のオイル中に設けられた円形のシリンダ内でこのシリン ダに対して偏心しているロータを回転しそして翼とシリンダとの間をオイルでシ ールし吸気と排気を繰り返して減圧状態を形成するものである。後者の方法は楕 円形のシリンダ内で２個の同形のまゆ形の断面を持つロータを互いに９０゜位相 をずらせて取り付けて回転して通常はこれを多段にして使用する。 Conventionally, after a semiconductor manufacturing device, etc., in which a large number of silicon (Si) wafers, etc. are placed in a closed chamber and the surface, etc. of each wafer etc. is physically or chemically processed, As for the exhaust method of residual gas, reaction by-product gas, etc., which is unnecessary and is rather harmful in processing / treatment, for example, (1) oil rotary vacuum pump method, (2) roots type multi-stage pump method, etc. is there. The former method rotates a rotor that is eccentric to this cylinder in a circular cylinder provided in the oil in the case, and then seals the oil between the blade and the cylinder to repeat intake and exhaust. To form a reduced pressure state. In the latter method, two rotors having the same cocoon-shaped cross section are mounted in an elliptical cylinder with their phases shifted by 90 ° and rotated, and usually they are used in multiple stages.
【０００３】[0003]
しかし、上記前者の方法はシリコン・ウエハの収容されている真空側にシール 用のオイルが著しく逆拡散、吸着してそのままでは正常な半導体製造におけるシ リコン・ウエハの加工・処理操作をすることができず、１０-3Ｔｏｒｒ程度のオ イルフリーの状態を少しも形成することができない欠点があった。後者の方法は 移送・排気されるガスが過度にかつ不必要に断続的に圧縮されてその排気ガスが ロータ中で凝縮して固形化し著しくはロータが目詰まりし運転の中止を余儀なく された。この様な場合に採られた方法は前記真空ポンプをラインから取外りし真 空ポンプを分解してその内部の前記凝縮物、付着物を洗浄して除去するが、この 作業はかなり手間が掛かり少なくとも数日を要して、その間のライン稼働停止は 製造ラインの生産効率を著しく低下させた。更に前者の方法ほどではないにして も軸受のオイルの逆拡散がやはり認められるという各種の欠点があった。 However, in the former method, the sealing oil remarkably back-diffuses and adsorbs on the vacuum side containing the silicon wafer, and the silicon wafer processing / processing operation in normal semiconductor manufacturing can be carried out as it is. However, there was a drawback that it was not possible to form an oil-free state of about 10 −3 Torr. In the latter method, the transferred and exhausted gas was excessively and unnecessarily intermittently compressed, and the exhaust gas condensed and solidified in the rotor, and the rotor was clogged significantly, forcing the operation to be stopped. In the method adopted in such a case, the vacuum pump is removed from the line, the vacuum pump is disassembled, and the condensate and deposits inside the vacuum pump are washed and removed, but this work is considerably troublesome. It took at least several days, and the shutdown of the line during that time significantly reduced the production efficiency of the production line. Furthermore, there were various drawbacks in that the back diffusion of the oil in the bearing was still recognized, although it was not as great as the former method.
【０００４】 この考案の目的は上記問題点に鑑み真空側、即ち例えばシリコン・ウエハ等に 対して加工又は反応操作を加える半導体製造装置側へ全くオイルを逆拡散させる ことなく、そして排気装置中においてその排出ガスの凝縮が生じて、その性能が 低下する場合でも、その洗浄のために例えば真空ポンプを製造ラインから取り外 すことなく短時間でその洗浄をなし凝縮物等を除去することのできる半導体製造 用の排気系装置を提供することである。In view of the above problems, an object of the present invention is to prevent the oil from being back-diffused to the vacuum side, that is, to the semiconductor manufacturing apparatus side that applies a processing operation or a reaction operation to, for example, a silicon wafer, and in an exhaust device. Even if the exhaust gas condenses and its performance deteriorates, it is possible to remove the condensate and the like in a short time without removing the vacuum pump from the production line for cleaning. An object is to provide an exhaust system device for semiconductor manufacturing.
【０００５】[0005]
この考案の半導体製造用の排気系装置は、密閉室内に多数のシリコンのウエハ 等を配置してその各ウエハ等の表面等に物理的又は化学的な処理・加工を加える 半導体製造装置等の排気装置において、上部に吸気口を持って下部に排気口を持 つケーシング部チャンバと、前記ケーシング部チャンバの吸気口に接続されそし て排気路と洗浄路に接続される分岐路と、前記排気路に設けられる排気系バルブ と、前記洗浄路に設けられる洗浄系バルブと、前記ケーシング部チャンバ内にそ の上部が入っておりそして垂直に設けられた第１回転軸と、前記ケーシング部チ ャンバ内にその上部が同様に入っておりそして前記第１回転軸に間隔を置いて平 行に設けられた第２回転軸と、前記第１回転軸の上部に固定され外周に角ねじを 備えそしてその上端が自由端となっている第１ロータと、前記第２回転軸の上部 に固定され外周に角ねじを備えそして同様にその上端が自由端となっておりそし て前記第１ロータと噛み合う第２ロータと、前記第１回転軸の下部に間隔を置い て上下に設けられた第１中部軸受体及び第１下部軸受体と、前記第２回転軸の下 部に間隔を置いて上下に設けられた第２中部軸受体及び第２下部軸受体と、前記 第１回転軸及び第２回転軸を相互に逆行方向に回転する回転駆動手段等を備える ことに特徴を有するものである。 The exhaust system device for semiconductor manufacturing of the present invention arranges a large number of silicon wafers or the like in a closed chamber and physically or chemically processes or processes the surface or the like of each wafer or the like. In the apparatus, a casing chamber having an intake port at an upper part and an exhaust port at a lower part, a branch passage connected to an intake port of the casing chamber and connected to an exhaust passage and a cleaning passage, and the exhaust passage An exhaust system valve provided in the casing, a cleaning system valve provided in the cleaning passage, a first rotating shaft having an upper portion thereof in the casing chamber and provided vertically, and a casing chamber chamber. The upper part of the first rotary shaft is also included, and the second rotary shaft is provided in parallel with the first rotary shaft at a distance from the first rotary shaft, and the square screw is fixed to the upper part of the first rotary shaft and is provided on the outer periphery thereof. A first rotor having an end which is a free end, and a square screw which is fixed to an upper portion of the second rotating shaft and is provided on the outer periphery of the first rotor, and likewise has an upper end which is a free end and which engages with the first rotor. 2 rotors, a first middle bearing body and a first lower bearing body, which are provided below and above the first rotating shaft with a space therebetween, and below the second rotating shaft with a space provided above and below. The second center bearing body and the second lower bearing body are provided, and the rotation driving means for rotating the first rotation shaft and the second rotation shaft in mutually reverse directions are provided.
【０００６】[0006]
この考案の半導体製造用の排気系装置でそのケーシング部チャンバの上部の吸 気口を半導体製造装置及びクリーニング流体源と分岐路を介して接続して通常の 稼働時では前記クリーニング流体源を洗浄系バルブで遮断する。一方洗浄時では 半導体製造装置を排気系バルブで遮断する。この場合、以下に述べる作用が認め られた。この考案の排気系装置中では通常の稼働時は排気経路における吸気ガス に対するガス容積の圧縮及び反復圧縮が全くないので凝縮性のあるガス等でもそ の凝縮が生じない。そして、ガス経路は角状をなして広くシンプルで、かつ多段 形式のものに比してもその経路が非常に短いので、この排気装置中においては殆 ど温度変化がなく、よって半導体装置から排気された反応ガス等を凝縮する前に この排気装置外に排出することになって、同様にこの真空ポンプ中においてはこ の面においても凝縮が起こらない。従って、ロータのネジ部に目詰まりが生ずる ことがなくて長期のメンテナンス・フリーの運転が可能である。しかし、ガスの 性質によってはその凝縮を避けられないこともあり、そして長期間の稼働によっ ても僅かずつの堆積もある。この場合は前記洗浄処理がなされるが、排気系バル ブを閉鎖し洗浄系バルブを開放してクリーニング流体をこの考案の排気装置のチ ャンバに流して洗浄する。この時、前記チャンバのある排気系装置を製造ライン から取り外さないでよい。そして左右のロータは垂直で、かつ前記クリーニング 流体の流入側には軸受体がない自由端となっているので著しく洗浄がし易い。 また、上述のように垂直に設けられた各ロータは吸気側に軸受体のない片持構 造としてあるので、真空側に対してさらに高度にオイルの逆方向の拡散が押さえ られる。即ち、油回転ポンプのシール用オイルによる第１のオイルの逆拡散がそ の構造上から存在しない上に、さらに軸受のその潤滑用のオイルに起因する第２ のオイルの逆拡散も生じない。従って、高集積度のＬＳＩ（大規模集積回路）等 の薄膜等の成膜を高精度で遂行することができる。 In the exhaust system for semiconductor manufacturing according to the present invention, the suction port at the upper part of the casing chamber is connected to the semiconductor manufacturing apparatus and the cleaning fluid source through a branch passage so that the cleaning fluid source is used as a cleaning system during normal operation. Shut off with a valve. On the other hand, during cleaning, the semiconductor manufacturing equipment is shut off by the exhaust system valve. In this case, the following effects were observed. In the exhaust system device of the present invention, during normal operation, there is no compression or repetitive compression of the gas volume with respect to the intake gas in the exhaust path, so that even condensable gas does not condense. The gas path is angular and wide and simple, and the path is very short compared to the multi-stage type, so there is almost no temperature change in this exhaust device, and therefore the gas is exhausted from the semiconductor device. Before the condensed reaction gas and the like are discharged to the outside of the exhaust device, similarly, in this vacuum pump, condensation does not occur on this surface either. Therefore, the screw portion of the rotor is not clogged, and long-term maintenance-free operation is possible. However, depending on the nature of the gas, its condensation may be unavoidable, and even a long-term operation may cause a slight accumulation. In this case, although the cleaning process is performed, the exhaust system valve is closed and the cleaning system valve is opened to flow the cleaning fluid into the chamber of the exhaust system of the present invention for cleaning. At this time, it is not necessary to remove the exhaust system device having the chamber from the manufacturing line. Further, since the left and right rotors are vertical and have free ends without bearings on the inflow side of the cleaning fluid, cleaning is extremely easy. Further, as described above, since each rotor installed vertically is a cantilever structure without a bearing body on the intake side, the diffusion of oil in the opposite direction can be suppressed to a higher degree with respect to the vacuum side. That is, because of the structure, there is no reverse diffusion of the first oil due to the sealing oil of the oil rotary pump, and further there is no reverse diffusion of the second oil due to the lubricating oil of the bearing. Therefore, a thin film such as a highly integrated LSI (large-scale integrated circuit) can be formed with high accuracy.
【０００７】[0007]
次に、この考案の半導体製造用の排気系装置の一実施例をその図面を参照して 以下に詳細に説明する。図１はこの考案に係る半導体製造用の排気系装置の一実 施例を示す説明図、図２はこの考案に係る半導体製造用の排気系装置の排気装置 の一実施例を示す要部断面図、図３はこの考案に係る半導体製造用の排気系装置 の排気装置の一実施例のロータ部を示す断面図、図４はこの考案に係る半導体製 造用の排気系装置の使用操作の一実施例を示す説明図、図５はこの考案の半導体 製造用の排気系装置の洗浄操作の一実施例を示すフローチャートである。 Next, an embodiment of an exhaust system device for semiconductor manufacturing of the present invention will be described in detail below with reference to the drawings. FIG. 1 is an explanatory view showing an embodiment of an exhaust system device for semiconductor manufacturing according to the present invention, and FIG. 2 is a sectional view of an essential part showing an embodiment of an exhaust system device for semiconductor manufacturing exhaust device according to the present invention. FIG. 3 is a sectional view showing a rotor portion of an embodiment of an exhaust system of an exhaust system apparatus for semiconductor manufacturing according to the present invention, and FIG. 4 is a use operation of the exhaust system apparatus for semiconductor manufacturing according to the present invention. FIG. 5 is an explanatory view showing an embodiment, and FIG. 5 is a flow chart showing an embodiment of the cleaning operation of the exhaust system device for semiconductor manufacturing of the present invention.
【０００８】 この考案の半導体製造用の排気系装置１は、図１及び図２に示すように、例え ばケーシング部２、切替え部３、回転軸部４、ロータ部５、軸受部６、駆動部７ から構成される。 前記ケーシング部２はチャンバ８、吸気口９及び排気口１０を有し、前記チャ ンバ８には後記の２本のロータが垂直に収容され回転して後述のようにして真空 が形成される。前記吸気口９は例えば前記チャンバ８の頂部中央に設けられ、こ こから半導体製造プロセスで生成した反応ガス等が吸気される。前記排気口１０ は排気口入口１０ａ、排気口通路１０ｂ及び排気口出口１０ｃからなり、前記排 気口入口１０ａは例えば前記チャンバ８の底部中央に設けられ、その下方に続い て前記排気口通路１０ｂが設けられ、排出ガスはこの排気口通路１０ｂを経て前 記排気口出口１０ｃから、後続する前記ガス等の処理系等に送出される。 切替え部３は分岐路１１、排気系バルブ１２及び洗浄系バルブ１３からなり、 前記分岐路１１は前記ケーシング部２のチャンバ８の吸気口９に接続されそして 後記排気路と洗浄路に分岐する。前記排気系バルブ１２は半導体製造装置のある 排気路側に設けられ、手動で又は電磁的に開閉される。前記洗浄系バルブ１３は クリーニング流体源と接続される洗浄路側に設けられ同様に開閉される。As shown in FIGS. 1 and 2, the exhaust system device 1 for semiconductor manufacturing according to the present invention includes, for example, a casing part 2, a switching part 3, a rotary shaft part 4, a rotor part 5, a bearing part 6, a drive part. It is composed of part 7. The casing portion 2 has a chamber 8, an intake port 9 and an exhaust port 10. The chamber 8 has two rotors, which will be described later, housed vertically and rotated to form a vacuum as described later. The intake port 9 is provided, for example, at the center of the top of the chamber 8, and the reaction gas or the like generated in the semiconductor manufacturing process is sucked from this. The exhaust port 10 includes an exhaust port inlet 10a, an exhaust port passage 10b, and an exhaust port outlet 10c. The exhaust port inlet 10a is provided, for example, at the center of the bottom of the chamber 8, and below the exhaust port passage 10b. The exhaust gas is sent from the exhaust port outlet 10c to the subsequent processing system for the gas or the like through the exhaust port passage 10b. The switching unit 3 includes a branch path 11, an exhaust system valve 12, and a cleaning system valve 13. The branch path 11 is connected to an intake port 9 of a chamber 8 of the casing section 2 and branches into an exhaust path and a cleaning path described later. The exhaust system valve 12 is provided on the exhaust passage side where the semiconductor manufacturing apparatus is located, and is opened or closed manually or electromagnetically. The cleaning system valve 13 is provided on the cleaning passage side connected to the cleaning fluid source and is similarly opened and closed.
【０００９】 前記回転軸部４は第１回転軸１４及び第２回転軸１５から成り、前記第１回転 軸１４及び第２回転軸１５は、望ましくはそれぞれ垂直に間隔を置いて設けられ る。前記第１回転軸１４のその上半部１４ａ及び前記第２回転軸１５の上半部１ ５ｂは前記チャンバ８内で上方に突出している。そして前記第１回転軸１４及び 第２回転軸１５はそれぞれの下半部１４ｂ、１５ｂで前記軸受部６を介してケー シング部下部１６に回転自在に固定される。即ち、こうして前記第１回転軸１４ 及び第２回転軸１５はその下半部１４ｂ及び１５ｂで支持される片持構造で設け られる。このように前記第１回転軸１４及び第２回転軸１５は水平でなく垂直保 持であり、そしてこれらの回転軸を間隔を置いた複数の軸受による支持構造なの で長期に亙って前記回転軸の軸振れは全く生じない。こうして回転軸は垂直片持 構造であるため吸気口側にその軸受を持たない。従って、軸受の潤滑用のオイル に基づく半導体製造装置側へのオイルの逆拡散が全く生起しない。The rotary shaft portion 4 is composed of a first rotary shaft 14 and a second rotary shaft 15, and the first rotary shaft 14 and the second rotary shaft 15 are preferably vertically spaced from each other. The upper half portion 14a of the first rotary shaft 14 and the upper half portion 15b of the second rotary shaft 15 project upward in the chamber 8. The first rotating shaft 14 and the second rotating shaft 15 are rotatably fixed to the casing lower part 16 via the bearing 6 at the lower half portions 14b and 15b. That is, in this way, the first rotary shaft 14 and the second rotary shaft 15 are provided in a cantilever structure supported by the lower half portions 14b and 15b thereof. As described above, the first rotary shaft 14 and the second rotary shaft 15 are held vertically instead of horizontally, and the rotary shafts are supported by a plurality of bearings spaced from each other. No shaft runout occurs. In this way, since the rotating shaft has a vertical cantilever structure, it does not have its bearing on the intake side. Therefore, no back diffusion of oil to the semiconductor manufacturing apparatus side due to the oil for lubricating the bearing occurs.
【００１０】 ロータ部５は第１ロータ１７及び第２ロータ１８で構成される。前記第１ロー タ１７は例えば前記第１回転軸１４のその上半部１４ａにその第１テーパ部１９ を介してその第１回転軸１４の頂部で第１ねじ２０により固定される。そして前 記チャンバ８内に回転可能に収容される。そして第１ロータ１７には図１に示す ように角状の例えば右ねじが形成される。前記第２ロータ１８は例えば前記第２ 回転軸１５のその上半部１５ａにその第２テーパ部２１を介してその第２回転軸 １５の頂部で第２ねじ２２により固定される。そして同様に前記チャンバ８内に 回転可能に収容される。そしてこの第２ロータ１８には図１に示すように前記と は異なり例えば角状の左ねじが形成される。そして前記第１ロータ１７と第２ロ ータ１８は噛み合って相互に逆方向、即ち例えば第１ロータはＡ方向、第２ロー タはＢ方向に回転される。ロータ部５と前記チャンバ８の間には接触しない程度 のクリアランス、例えば約１ｍｍ以下程度が設けられる。The rotor section 5 is composed of a first rotor 17 and a second rotor 18. The first rotor 17 is fixed to the upper half portion 14a of the first rotary shaft 14 via the first taper portion 19 at the top of the first rotary shaft 14 by the first screw 20, for example. Then, it is rotatably accommodated in the chamber 8. Then, as shown in FIG. 1, the first rotor 17 is formed with, for example, a right-handed screw having an angular shape. The second rotor 18 is fixed to the upper half portion 15a of the second rotary shaft 15 via the second taper portion 21 at the top of the second rotary shaft 15 by the second screw 22, for example. Similarly, it is rotatably accommodated in the chamber 8. As shown in FIG. 1, the second rotor 18 is formed with, for example, a square left screw, unlike the above. The first rotor 17 and the second rotor 18 mesh with each other and rotate in mutually opposite directions, that is, the first rotor rotates in the A direction and the second rotor rotates in the B direction. A clearance is provided between the rotor unit 5 and the chamber 8 so that the rotor unit 5 and the chamber 8 do not come into contact with each other, for example, about 1 mm or less.
【００１１】 前記軸受部６は第１中部軸受体６ａ、第１下部軸受体６ｂ、第２中部軸受体６ ｃ及び第２下部軸受体６ｄから成る。前記第１中部軸受体６ａ及び第２下部軸受 体６ｂには例えばスラスト軸受が使用される。これらは間隔を置いてケーシング 部下部１６に定置され、前記第１ロータ１７の固定された第１回転軸１４をその 下半部１４ｂで回転自在に片持構造で、しかし軸振れを生じさせることなく堅牢 に支持する。前記第２中部軸受体６ｃ及び第２下部軸受体６ｄにも同様に例えば スラスト軸受が使用される。これらも間隔を置いてケーシング部下部１６に定置 され、前記第２ロータ１７の固定された第２回転軸１７を回転自在に片持構造で 同様に支持する。The bearing portion 6 includes a first middle bearing body 6a, a first lower bearing body 6b, a second middle bearing body 6c and a second lower bearing body 6d. Thrust bearings are used for the first middle bearing body 6a and the second lower bearing body 6b, for example. These are fixedly placed on the lower part 16 of the casing part with a space therebetween, and the fixed first rotating shaft 14 of the first rotor 17 is cantilevered by the lower half part 14b thereof, but causes shaft runout. Supports robustly. Similarly, for example, thrust bearings are used for the second middle bearing body 6c and the second lower bearing body 6d. These are also fixedly placed on the lower part 16 of the casing part with a space therebetween, and also rotatably support the fixed second rotating shaft 17 of the second rotor 17 in a cantilever structure.
【００１２】 前記駆動部７は第１タイミングギヤ２３、第２タイミングギヤ２４、第１従動 ギヤ２５、第２従動ギヤ２６、図示しない駆動ギヤ及び同様に図示しない駆動装 置から成っている。前記第１タイミングギヤ２３は前記第１回転軸１４の下半部 １４ｂに固定される。この第１タイミングギヤ２３は例えば前記第１中部軸受体 ６ａと第１下部軸受体６ｂとの間に設けられる。前記第２タイミングギヤ２４は 前記第２回転軸１５の下半部１５ｂに固定される。この第２タイミングギヤ２４ も例えば前記第２中部軸受体６ｃと第２下部軸受体６ｄとの間に設けられる。前 記第１タイミングギヤ２３と第２タイミングギヤ２４は噛み合って互いに逆方向 に同じ角速度で回転される。第１従動ギヤ２５は前記第２タイミングギヤ２４と 例えば一体に形成され前記第２回転軸１５に同様に固定される。第２従動ギヤ２ ６は上下のベアリングにより垂直に回転自在にケーシング部下部１６に保持され た回転軸２７に固定され、前記第１従動ギヤ２５と噛み合わされる。この第２従 動ギヤ２６は図示しない駆動ギヤと噛み合い、そしてこの駆動ギヤは駆動装置例 えば３相誘導電動機等のシャフトに固定される。以上によって前記電動機の電源 スイッチがＯＮとなると前記第１タイミングギヤ２３及び第２タイミングギヤ２ ４、即ち第１ロータ１７及び第２ロータ１８は相互に逆方向に定速度で駆動回転 される。The drive unit 7 includes a first timing gear 23, a second timing gear 24, a first driven gear 25, a second driven gear 26, a drive gear (not shown), and a drive device (not shown). The first timing gear 23 is fixed to the lower half portion 14b of the first rotating shaft 14. The first timing gear 23 is provided, for example, between the first middle bearing body 6a and the first lower bearing body 6b. The second timing gear 24 is fixed to the lower half portion 15b of the second rotating shaft 15. The second timing gear 24 is also provided, for example, between the second middle bearing body 6c and the second lower bearing body 6d. The first timing gear 23 and the second timing gear 24 described above mesh with each other and rotate in opposite directions at the same angular velocity. The first driven gear 25 is formed integrally with the second timing gear 24, for example, and is similarly fixed to the second rotating shaft 15. The second driven gear 26 is vertically rotatably fixed to a rotating shaft 27 held by the casing lower portion 16 by upper and lower bearings, and meshes with the first driven gear 25. The second driven gear 26 meshes with a drive gear (not shown), and the drive gear is fixed to the shaft of a drive device such as a three-phase induction motor. As described above, when the power switch of the electric motor is turned on, the first timing gear 23 and the second timing gear 24, that is, the first rotor 17 and the second rotor 18 are driven and rotated in the opposite directions at a constant speed.
【００１３】 この考案の半導体製造用の排気系装置の使用操作の一例を説明する。この考案 の半導体製造用の排気系装置１は使用操作に当たり図４に示すように例えばその 吸気口９は分岐路１１及び排気系バルブ１２を経て、半導体製造装置２８の排出 口２９と排気路３０等を介して接続され、例えば通常ここに圧力計３１が設けら れる。そして排気口出口１０ｃは排出バルブ３２を経て例えばトラップ装置３３ の入口側３４と接続する。また、排液タンク３５とも接続する。前記半導体製造 装置２８は例えば反応室３６、加工品出入れ口３７、ガス送入口３８及び排出口 ２９等を備える。加工されるウエハ３９はキャリア４０上に並べて前記反応室３ ６に収容される。こうして、この考案の半導体製造用の排気系装置１の電源スイ ッチがＯＮにされる。ガス送入口３８からは反応ガス４１が送り込まれ、一方排 出口２９からは排気路３０を経て反応副成ガス等がこの考案の排気系装置１によ って吸気される。前記排気系装置１において第１ロータ１７はＡ方向に回転し、 第２ロータ１８はＢ方向に回転してガス容積を反復圧縮することなくそしてロー タの目詰まり等による性能の低下を来すことなく吸気口９から前記ガス等が吸引 され排気口出口１０ｃから排出される。この考案の排気系装置１の排出するガス 等は次いで例えば配管４２を経てトラップ装置３３に送られて、そこに設けられ る水冷装置やバッフル等により凝縮性の固形分等が除去されその出口側４３から 放出される。以後、必要に応じて設けられるガス等処理設備、排液タンク３５等 に送られる。 次にクリーニング操作の一実施例を図４及び図５により説明する。圧力計３１ をモニターしてその表示から真空系の負荷の増大が検出されることによってクリ ーニング処理が進行する。即ち、排気系バルブ１２を閉止し洗浄系バルブ１３を 開放する。こうしてクリーニング流体源、例えば水、湯又はアルコール等が洗浄 路４４を経てチャンバ８及びそこにあるローに供給され、浸透され、洗い流され て乾燥される。洗浄後、洗浄系バルブを閉止し排気系バルブを開放して洗浄処理 が完了する。上記において前記排気系装置を製造ラインから取り外さないでよい 。そして左右のロータは垂直で、かつ前記洗浄液又はクリーニング流体の流入側 には軸受体がない自由端となっているので著しく洗浄がし易い。An example of the operation of using the exhaust system device for semiconductor manufacturing of the present invention will be described. As shown in FIG. 4, the exhaust system 1 for semiconductor manufacturing according to the present invention has its intake port 9 passing through the branch passage 11 and the exhaust system valve 12 as shown in FIG. Etc., and a pressure gauge 31 is usually provided here, for example. The exhaust outlet 10c is connected to the inlet side 34 of the trap device 33, for example, via the exhaust valve 32. It is also connected to the drainage tank 35. The semiconductor manufacturing apparatus 28 includes, for example, a reaction chamber 36, a processed product inlet / outlet 37, a gas inlet 38, and an outlet 29. The wafers 39 to be processed are arranged on a carrier 40 and housed in the reaction chamber 36. In this way, the power switch of the exhaust system device 1 for semiconductor manufacturing of the present invention is turned on. The reaction gas 41 is fed from the gas inlet 38, while the reaction by-product gas or the like is sucked from the exhaust outlet 29 through the exhaust passage 30 by the exhaust system 1 of the present invention. In the exhaust system device 1, the first rotor 17 rotates in the A direction and the second rotor 18 rotates in the B direction without repeatedly compressing the gas volume, and the performance is deteriorated due to the clogging of the rotor. Without suction, the gas or the like is sucked from the intake port 9 and discharged from the exhaust port outlet 10c. The gas or the like discharged from the exhaust system 1 of the present invention is then sent to the trap device 33 through, for example, the pipe 42, the condensable solids and the like are removed by a water cooling device or a baffle provided therein, and the outlet side thereof. It is released from 43. After that, the gas is sent to a gas processing facility, a drainage tank 35, and the like provided as needed. Next, an example of the cleaning operation will be described with reference to FIGS. When the pressure gauge 31 is monitored and the increase in the load on the vacuum system is detected from the display, the cleaning process proceeds. That is, the exhaust system valve 12 is closed and the cleaning system valve 13 is opened. Thus, a source of cleaning fluid, such as water, hot water or alcohol, is supplied to the chamber 8 and the wax therein through the cleaning passage 44, where it is permeated, washed off and dried. After cleaning, close the cleaning system valve and open the exhaust system valve to complete the cleaning process. In the above, the exhaust system device may not be removed from the manufacturing line. The left and right rotors are vertical and have free ends without bearings on the inflow side of the cleaning liquid or cleaning fluid, so that cleaning is extremely easy.
【００１４】[0014]
この考案の半導体製造用の排気系装置は以上のように構成されるものであるか ら、排気経路においてガス容積を圧縮させず凝縮性のあるガス等でもその凝縮が 生じにくい。ガス経路は角状をなして広くシンプルで、かつ非常に短く温度変化 がなく、よって半導体装置から排気された反応ガス等が凝縮する前にこの排気装 置外に排出することになりこの意味でも凝縮現象を生起しにくい。したがって、 ロータのネジ部に目詰まりが殆ど生ずることがなく長期のメンテナンス・フリー の運転が可能となる。しかし反応ガスによって排気系装置のチャンバ中において その凝縮が生じて、その性能が低下する場合があるが、この場合でもその洗浄の ために例えば真空ポンプ又は排気系装置を製造ラインから取り外すことなく短時 間例えば２時間程度でその洗浄をなし凝縮物等を除去することができる。そして 垂直に設けられたロータの各回転軸は吸気側に軸受体のない片持構造としてある ので、真空側に対して更に高度にオイルの逆方向の拡散が押さえられる。即ち、 油回転ポンプのシール用オイルによる第１のオイルの逆拡散がない上に、更に軸 受の潤滑油に起因する第２のオイルの逆拡散も生じない。こうして１０-4Ｔｏｒ ｒ以下の真空が得られる。したがって、高集積度のＬＳＩ（大規模集積回路）等 の成膜を高精度で遂行することができる。また、前記第１回転軸及び第２回転軸 は水平でなく垂直保持であり、そしてこれらの回転軸を間隔を置いた複数の軸受 による支持構造なので長期に亙って前記回転軸の軸振れが全く生じない等の産業 上において顕著な効果を奏する。 Since the exhaust system device for semiconductor manufacturing of the present invention is configured as described above, condensation of a condensable gas or the like does not occur easily without compressing the gas volume in the exhaust path. The gas path is angular and wide and simple, and it is very short and does not change in temperature.Therefore, the reaction gas exhausted from the semiconductor device is discharged outside the exhaust device before it condenses. Hard to cause condensation phenomenon. Therefore, the screw part of the rotor is hardly clogged, and long-term maintenance-free operation is possible. However, the reaction gas may cause its condensation in the chamber of the exhaust system device and reduce its performance.However, even in this case, for example, the vacuum pump or the exhaust system device may not be removed from the production line for cleaning in order to clean the exhaust gas. It is possible to remove the condensate and the like by washing for about 2 hours, for example. Further, since each rotating shaft of the rotor installed vertically has a cantilever structure without a bearing body on the intake side, the diffusion of oil in the opposite direction can be further suppressed against the vacuum side. That is, the first oil is not back-diffused by the oil for sealing the oil rotary pump, and further the second oil is not back-diffused due to the lubricating oil of the bearing. In this way, a vacuum of 10 -4 Torr or less is obtained. Therefore, it is possible to highly accurately form a highly integrated LSI (Large Scale Integrated Circuit) or the like. Further, since the first rotary shaft and the second rotary shaft are not held horizontally but held vertically, and the support structure is provided by a plurality of bearings which are spaced from each other, the shaft runout of the rotary shaft is prevented over a long period of time. It has a remarkable effect on industry, such as no occurrence at all.
【図１】この考案に係る半導体製造用の排気系装置の一
実施例を示す説明図である。FIG. 1 is an explanatory view showing an embodiment of an exhaust system device for semiconductor manufacturing according to the present invention.
【図２】この考案に係る半導体製造用の排気系装置の排
気装置の一実施例を示す要部断面図である。FIG. 2 is a sectional view of an essential part showing an embodiment of an exhaust device of an exhaust system device for semiconductor manufacturing according to the present invention.
【図３】この考案に係る半導体製造用の排気系装置の排
気装置の一実施例のロータ部を示す断面図である。FIG. 3 is a sectional view showing a rotor portion of an embodiment of an exhaust device of an exhaust system device for semiconductor manufacturing according to the present invention.
【図４】この考案に係る半導体製造用の排気系装置の使
用操作の一実施例を示す説明図である。示す断面図であ
る。FIG. 4 is an explanatory view showing an embodiment of an operation of using the exhaust system device for semiconductor manufacturing according to the present invention. It is sectional drawing shown.
【図４】この考案に係る半導体製造用の排気系装置の使
用操作の一実施例を示す説明図である。FIG. 4 is an explanatory view showing an embodiment of an operation of using the exhaust system device for semiconductor manufacturing according to the present invention.
【図５】この考案の半導体製造用の排気系装置の洗浄操
作の一実施例を示すフローチャートである。FIG. 5 is a flow chart showing an embodiment of a cleaning operation of the exhaust system device for semiconductor manufacturing of the present invention.
１ 半導体製造用の排気系装置 ２ ケーシング
部 ３ 切替え部 ４ 回転軸部 ５ ロータ部 ６ 軸受部 ７ 駆動部 ８ チャンバ ９ 吸気口 １０ 排気口 １１ 分岐路 １２ 排気系バ
ルブ １３ 洗浄系バルブ １４ 第１回転
軸 １５ 第２回転軸 １６ ケーシン
グ部下部 １７ 第１ロータ １８ 第２ロー
タ ２３ 第１タイミングギヤ ２４ 第２タイ
ミングギヤ ２５ 第１従動ギヤ ２６ 第２従動
ギヤ1 Exhaust System Equipment for Semiconductor Manufacturing 2 Casing Section 3 Switching Section 4 Rotating Shaft Section 5 Rotor Section 6 Bearing Section 7 Drive Section 8 Chamber 9 Intake Port 10 Exhaust Port 11 Branch Path 12 Exhaust System Valve 13 Cleaning System Valve 14 First Rotation Shaft 15 Second rotary shaft 16 Lower casing part 17 First rotor 18 Second rotor 23 First timing gear 24 Second timing gear 25 First driven gear 26 Second driven gear
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成５年１２月１２日[Submission date] December 12, 1993
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】図面の簡単な説明[Name of item to be corrected] Brief description of the drawing
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【図面の簡単な説明】[Brief description of drawings]
【図１】この考案に係る半導体製造用の排気系装置の一
実施例を示す説明図である。FIG. 1 is an explanatory view showing an embodiment of an exhaust system device for semiconductor manufacturing according to the present invention.
【図２】この考案に係る半導体製造用の排気系装置の排
気装置の一実施例を示す要部断面図である。FIG. 2 is a sectional view of an essential part showing an embodiment of an exhaust device of an exhaust system device for semiconductor manufacturing according to the present invention.
【図３】この考案に係る半導体製造用の排気系装置の排
気装置の一実施例のロータ部を示す断面図である。FIG. 3 is a sectional view showing a rotor portion of an embodiment of an exhaust device of an exhaust system device for semiconductor manufacturing according to the present invention.
【図４】この考案に係る半導体製造用の排気系装置の使
用操作の一実施例を示す説明図である。示す断面図であ
る。FIG. 4 is an explanatory view showing an embodiment of an operation of using the exhaust system device for semiconductor manufacturing according to the present invention. It is sectional drawing shown.
【図５】この考案の半導体製造用の排気系装置の洗浄操
作の一実施例を示４フローチャートである。FIG. 5 is a flowchart showing an embodiment of the cleaning operation of the exhaust system device for semiconductor manufacturing of the present invention.
【符号の説明】 １ 半導体製造用の排気系装置 ２ ケーシング
部 ３ 切替え部 ４ 回転軸部 ５ ロータ部 ６ 軸受部 ７ 駆動部 ８ チャンバ ９ 吸気口 １０ 排気口 １１ 分岐路 １２ 排気系バ
ルブ １３ 洗浄系バルブ １４ 第１回転
軸 １５ 第２回転軸 １６ ケーシン
グ部下部 １７ 第１ロータ １８ 第２ロー
タ ２３ 第１タイミングギヤ ２４ 第２タイ
ミングギヤ ２５ 第１従動ギヤ ２６ 第２従動
ギヤ ２７ 回転軸 ２８ 半導体製
造装置 ２９ 排出口 ３０ 排気路 ３１ 圧力計 ３２ 排出バル
ブ[Explanation of Codes] 1 Exhaust system device for semiconductor manufacturing 2 Casing part 3 Switching part 4 Rotating shaft part 5 Rotor part 6 Bearing part 7 Drive part 8 Chamber 9 Inlet port 10 Exhaust port 11 Branch passage 12 Exhaust system valve 13 Cleaning system Valve 14 First rotating shaft 15 Second rotating shaft 16 Lower casing part 17 First rotor 18 Second rotor 23 First timing gear 24 Second timing gear 25 First driven gear 26 Second driven gear 27 Rotating shaft 28 Semiconductor manufacturing equipment 29 discharge port 30 exhaust path 31 pressure gauge 32 discharge valve
Claims (1)
配置してその各ウエハ等の表面等に物理的又は化学的な
処理・加工を加える半導体製造装置の排気装置におい
て、上部に吸気口を持ち下部に排気口を持つチャンバ内
に、外周に角ねじを備えそしてその上端が自由端となっ
ている片持構造の第１ロータと、同様に形成され前記第
１ロータと噛み合う第２ロータとを垂直に設けて、前記
各ロータを相互に逆行方向に回転すると共に排気路と洗
浄路に接続される分岐路を前記チャンバの吸気口に接続
し、前記排気路に排気系バルブを設けそして前記洗浄路
に洗浄系バルブを設けたことを特徴とする半導体製造用
の排気系装置。1. An exhaust device of a semiconductor manufacturing apparatus in which a large number of wafers of silicon or the like are placed in a closed chamber and the surface or the like of each wafer or the like is subjected to physical or chemical processing / processing, and an intake port is provided at the upper part. A first rotor having a cantilever structure in which a square screw is provided on the outer periphery and an upper end of which is a free end in a chamber having an exhaust port at its lower portion, and a second rotor which is similarly formed and meshes with the first rotor. Is provided vertically, the respective rotors are rotated in opposite directions to each other, and a branch passage connected to the exhaust passage and the cleaning passage is connected to the intake port of the chamber, and an exhaust system valve is provided in the exhaust passage. An exhaust system device for semiconductor manufacturing, wherein a cleaning system valve is provided in the cleaning path.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7152292U JPH0653793U (en) | 1992-09-19 | 1992-09-19 | Exhaust system equipment for semiconductor manufacturing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7152292U JPH0653793U (en) | 1992-09-19 | 1992-09-19 | Exhaust system equipment for semiconductor manufacturing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0653793U true JPH0653793U (en) | 1994-07-22 |
Family
ID=13463147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7152292U Pending JPH0653793U (en) | 1992-09-19 | 1992-09-19 | Exhaust system equipment for semiconductor manufacturing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0653793U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3674551A1 (en) | 2018-12-28 | 2020-07-01 | Ebara Corporation | Vacuum pump apparatus |
| EP3674552A2 (en) | 2018-12-28 | 2020-07-01 | Ebara Corporation | Bearing apparatus and vacuum pump apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02283898A (en) * | 1989-04-21 | 1990-11-21 | Hitachi Koki Co Ltd | Thread groove molecular pump |
| JPH0573300B2 (en) * | 1987-03-02 | 1993-10-14 | Fujitsu Ltd |
-
1992
- 1992-09-19 JP JP7152292U patent/JPH0653793U/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0573300B2 (en) * | 1987-03-02 | 1993-10-14 | Fujitsu Ltd | |
| JPH02283898A (en) * | 1989-04-21 | 1990-11-21 | Hitachi Koki Co Ltd | Thread groove molecular pump |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3674551A1 (en) | 2018-12-28 | 2020-07-01 | Ebara Corporation | Vacuum pump apparatus |
| EP3674552A2 (en) | 2018-12-28 | 2020-07-01 | Ebara Corporation | Bearing apparatus and vacuum pump apparatus |
| EP3981985A1 (en) | 2018-12-28 | 2022-04-13 | Ebara Corporation | Bearing apparatus and vacuum pump apparatus |
| EP3981986A1 (en) | 2018-12-28 | 2022-04-13 | Ebara Corporation | Bearing apparatus and vacuum pump apparatus |
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