JPH0632311B2 - Display device - Google Patents
Display deviceInfo
- Publication number
- JPH0632311B2 JPH0632311B2 JP58019128A JP1912883A JPH0632311B2 JP H0632311 B2 JPH0632311 B2 JP H0632311B2 JP 58019128 A JP58019128 A JP 58019128A JP 1912883 A JP1912883 A JP 1912883A JP H0632311 B2 JPH0632311 B2 JP H0632311B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- light
- dielectric
- display device
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 14
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【発明の詳細な説明】 本発明は、良好な表示特性を呈する特にＥＬ発光素子，
液晶表示素子等の表示装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention is particularly directed to EL light-emitting devices that exhibit good display characteristics.
The present invention relates to a display device such as a liquid crystal display element.
従来の背面電極構造としては、例えば第１図に示すよう
なＥＬ発光素子に使用されたものがある。第１図に基い
てＥＬ発光素子の構成を具体的に説明すると、ガラス基
板１上にIn2O3やSnO2等の透明導電膜２、Y2O3やSi3N4等
からなる第１誘電体層３、Mnを微量含むNnSからなる発
光層４、第１の誘電体層３と同様の材質からなる第２の
誘電体層５が、電子ビーム蒸着あるいはスパツタリング
によつて順次積層され、透明多層膜100 が形成される。
さらに第２の誘電体層５上にＭo等の反射率の低い背面
電極６が、電子ビーム蒸着あるいはスパツタリングによ
つて形成される。As a conventional back electrode structure, there is one used for an EL light emitting device as shown in FIG. 1, for example. The structure of the EL light-emitting device will be described in detail with reference to FIG. 1. A transparent conductive film 2 made of In 2 O 3 , SnO 2 or the like, Y 2 O 3 , Si 3 N 4 or the like formed on a glass substrate 1. 1 dielectric layer 3, light emitting layer 4 made of NnS containing a trace amount of M n , and second dielectric layer 5 made of the same material as the first dielectric layer 3 are sequentially laminated by electron beam evaporation or sputtering. Then, the transparent multilayer film 100 is formed.
Lower back electrode 6 reflectivity such as M o over the second dielectric layer 5 is by connexion formed on the electron-beam evaporation or Supatsutaringu.
透明導電膜２と背面電極６との間に交流電圧を印加する
と、発光層４が発光表示を行なう。また発光層４が非発
光時、透明多層膜100 より入射した外来光を背面電極６
におけるＭoの光吸収作用を利用して外来光の一部を吸
収し、背面電極６による外来光の反射を防いでいる。When an AC voltage is applied between the transparent conductive film 2 and the back electrode 6, the light emitting layer 4 emits light. Further, when the light emitting layer 4 is not emitting light, external light incident from the transparent multilayer film 100 is applied to the back electrode 6.
Part of the external light is absorbed by utilizing the light absorbing action of M o at, and the reflection of the external light by the back electrode 6 is prevented.
しかしながら従来の表示装置にあつては、外来光が光吸
収体からなる背面電極に当たると、その一部は吸収され
るが、その他の反射した光は透明多層膜を通過してしま
うような構造となつていたため、表示を行なつていない
にもかかわらず、太陽光線のような外来光の強い環境下
では、背面電極で吸収しきれない反射光によつて表示さ
れているかのように見えることがあり、表示されている
部分と表示されていない部分との区別のつけにくい場合
があつた。However, in the conventional display device, when external light hits the back electrode made of a light absorber, part of the light is absorbed, but the other reflected light passes through the transparent multilayer film. Therefore, even if the display is not performed, it may appear as if it is displayed by reflected light that cannot be absorbed by the back electrode in an environment with strong external light such as sunlight. There was a case where it was difficult to distinguish between the displayed part and the non-displayed part.
本発明は上記の点に鑑がみてなされたもので、その目的
とするところは表示装置の背面電極における外来光の反
射を低減させるために有効な手段を提供するものであ
る。係る目的を達成するために島状構造のモリブデン薄
膜と金属膜との間で、反復して光が吸収される構成とし
た。The present invention has been made in view of the above points, and an object thereof is to provide an effective means for reducing reflection of extraneous light on a back electrode of a display device. In order to achieve such an object, light is repeatedly absorbed between the island-shaped molybdenum thin film and the metal film.
以下、本発明を実施例に従つて詳細に説明する。Hereinafter, the present invention will be described in detail with reference to Examples.
第２図は本発明の一実施例で、ＥＬ発光素子を例に説明
する。透明多層膜100 は従来の例と同様に形成される。
第２の誘電体層５上に膜厚５０〜300 ÅのＭo薄膜７を
蒸着あるいはスパツタリングすると、非晶質で島状構造
を有するＭoが点在した形で形成される。さらにＭo薄膜
７上及び、Ｍoのすきま部分の透明多層膜上にAl2O3等の
透明な誘電体薄膜８を、さらにその上にAl等の金属膜９
を、蒸着あるいはスパツタリングにより作製する。FIG. 2 shows an embodiment of the present invention, and an EL light emitting element will be described as an example. The transparent multilayer film 100 is formed similarly to the conventional example.
When depositing or Supatsutaringu the M o thin film 7 having a thickness of 50 to 300 Å on the second dielectric layer 5, M o having an island-like structure to form an amorphous form interspersed. Further M o film 7 above and, a transparent dielectric thin film 8, for example, Al 2 O 3 on the transparent multilayer film of the gap portion of M o, further a metal film such as Al thereon 9
Are produced by vapor deposition or sputtering.
次に本実施例における光吸収作用を第２図を用いて説明
する。透明多層膜100 側から侵入した外来光の一部は、
島状構造を有するＭo薄膜７のすきまから透明な誘電体
薄膜８内に侵入する。この光は、Ｍo薄膜７と金属膜９
との間で反射をくり返し、Ｍo薄膜７に反射するたびに
光が吸収されていく。またＭo薄膜７に直接当たつた外
来光はＭoの光吸収作用により減衰される。Next, the light absorbing action in this embodiment will be described with reference to FIG. Part of the extraneous light entering from the transparent multilayer film 100 side is
Entering the M o film 7 clearance transparent dielectric thin film within 8 from having the island structure. This light is generated by the Mo thin film 7 and the metal film 9
The light is absorbed every time it is reflected by the M o thin film 7 by repeating reflection between and. The skilled Tatsuta external light directly M o film 7 is attenuated by the light absorbing action of M o.
本実施例においては、Ｍo薄膜７のすきまから侵入した
外来光を、繰り返しの反射を利用して何度も光を吸収す
る構造としたため、外来光に対して６％以下の光の反射
率を実現できた。In the present embodiment, the external light entering from the gap between the M o thin film 7, since by utilizing the reflection of repeatedly has a structure capable of absorbing light, reflectance of 6% or less of the light with respect to the external light Was realized.
第３図は本発明の他の実施例を示す図である。本実施例
においては、前記一実施例の透明な誘電体薄膜８と金属
膜９との間に、誘電体から金属へ連続的に変化する誘電
体−金属膜１０を配設する。前記誘電体−金属膜１０
は、誘電体薄膜８上に酸素中でAl等の金属を蒸着あるい
はリアクテイプスパツタを行なうことによりAl2O3膜が
形成され、除除に酸素分圧を低減させ、最終的には真空
あるいはAr中で、Alを蒸着あるいはスパツタリングを行
なうことによりAl膜が形成される。FIG. 3 is a diagram showing another embodiment of the present invention. In this embodiment, a dielectric-metal film 10 that continuously changes from a dielectric to a metal is provided between the transparent dielectric thin film 8 and the metal film 9 of the above-described embodiment. The dielectric-metal film 10
Is an Al 2 O 3 film formed by vapor-depositing a metal such as Al in the oxygen on the dielectric thin film 8 or performing a recapturing sputtering. Alternatively, an Al film is formed by vapor deposition or sputtering of Al in Ar.
前記誘電体−金属膜１０の配設により、前記一実施例の
効果に加え、Ｍoのすきまより侵入した光は、誘電体−
金属膜中のAlでの反射位置が一定でないため、様々な光
路差をもつた光どおしの干渉作用が起り、可視光全域に
わたり減衰することができる。Said dielectric - by arrangement of the metal film 10, in addition to the effects of the embodiment, the light having entered from the gap between the M o is the dielectric -
Since the reflection position of Al in the metal film is not constant, interference between lights having various optical path differences occurs, and the light can be attenuated over the entire visible light range.
以上説明したように、本発明によれば、島状構造のモリ
ブデン薄膜と金属膜との間で反復して光が吸収される、
構成とすることにより、背面電極における外来光の反射
を有効に防止することができる。このためコントラスト
比が高くなり、明るい環境下でも表示品位の高い表示状
態を持続させることが可能となる。As described above, according to the present invention, light is repeatedly absorbed between the island-shaped molybdenum thin film and the metal film,
With this structure, reflection of extraneous light on the back electrode can be effectively prevented. For this reason, the contrast ratio becomes high, and it is possible to maintain a display state with high display quality even in a bright environment.
第１図は、従来の構成を示す図。 第２図は、本発明の一実施例の構成を示す図。 第３図は、本発明の他の実施例の構成を示す図。 ６……Ｍo背面電極、７……島状Ｍo薄膜 ８……Al2O3薄膜、９……金属膜 １０……誘電体−金属膜 100……透明多層膜FIG. 1 is a diagram showing a conventional configuration. FIG. 2 is a diagram showing the configuration of an embodiment of the present invention. FIG. 3 is a diagram showing the configuration of another embodiment of the present invention. 6 ... Mo back electrode, 7 ... island Mo thin film 8 ... Al 2 O 3 thin film, 9 ... metal film 10 ... dielectric-metal film 100 ... transparent multilayer film
Claims (2)
面電極と背面側に配設された背面電極との間に透明な発
光層を形成してなる表示装置において、 上記背面電極を、上記発光層に近い方から順に島状構造
のモリブデン薄膜と透明な誘電体膜を少なくとも一層以
上形成し、その外側に金属膜を設けた多層薄膜で形成し
たことを特徴とする表示装置。1. A display device in which a transparent light emitting layer is formed between a front electrode made of a transparent conductive film provided on the display side and a back electrode provided on the back side. A display device comprising a molybdenum thin film having an island structure and at least one transparent dielectric film formed in this order from the side closer to the light emitting layer, and a multi-layer thin film provided with a metal film on the outside thereof.
体から金属へ物質の混合比率が連続的に変化する誘電体
−金属膜を配置したことを特徴とする特許請求の範囲第
１項記載の表示装置。2. A dielectric-metal film in which a mixing ratio of a substance from a dielectric to a metal continuously changes is arranged between the dielectric film and the metal film. The display device according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58019128A JPH0632311B2 (en) | 1983-02-08 | 1983-02-08 | Display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58019128A JPH0632311B2 (en) | 1983-02-08 | 1983-02-08 | Display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59146193A JPS59146193A (en) | 1984-08-21 |
| JPH0632311B2 true JPH0632311B2 (en) | 1994-04-27 |
Family
ID=11990817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58019128A Expired - Lifetime JPH0632311B2 (en) | 1983-02-08 | 1983-02-08 | Display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0632311B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0744074B2 (en) * | 1985-03-18 | 1995-05-15 | 日産自動車株式会社 | Thin film EL device |
| JPS61220292A (en) * | 1985-03-26 | 1986-09-30 | ホ−ヤ株式会社 | Thin film el element and manufacture thereof |
| JPH0740516B2 (en) * | 1985-06-07 | 1995-05-01 | 日本電信電話株式会社 | Flat display device and manufacturing method thereof |
| BE1007482A3 (en) * | 1993-09-08 | 1995-07-11 | Philips Electronics Nv | IMAGE DISPLAY DEVICE PROVIDED WITH A electro-optical medium. |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5827506B2 (en) * | 1978-06-02 | 1983-06-09 | シャープ株式会社 | Blackened electrode structure |
-
1983
- 1983-02-08 JP JP58019128A patent/JPH0632311B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59146193A (en) | 1984-08-21 |
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