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JPH06314729A - Vacuum processing apparatus - Google Patents

Vacuum processing apparatus

Info

Publication number
JPH06314729A
JPH06314729A JP5125218A JP12521893A JPH06314729A JP H06314729 A JPH06314729 A JP H06314729A JP 5125218 A JP5125218 A JP 5125218A JP 12521893 A JP12521893 A JP 12521893A JP H06314729 A JPH06314729 A JP H06314729A
Authority
JP
Japan
Prior art keywords
chamber
transfer
vacuum
processed
vacuum processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5125218A
Other languages
Japanese (ja)
Other versions
JP3151582B2 (en
Inventor
Masaki Narishima
正樹 成島
Toshiyuki Kawaji
利幸 河治
Masao Kubodera
正男 久保寺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tel Varian Ltd
Original Assignee
Tel Varian Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tel Varian Ltd filed Critical Tel Varian Ltd
Priority to JP12521893A priority Critical patent/JP3151582B2/en
Priority to KR1019930021322A priority patent/KR100242534B1/en
Priority to TW085212876U priority patent/TW327479U/en
Publication of JPH06314729A publication Critical patent/JPH06314729A/en
Application granted granted Critical
Publication of JP3151582B2 publication Critical patent/JP3151582B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Manipulator (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE:To enable a vacuum processing device to surely deliver a processing work to a vessel, be improved in general-purpose properties, and enhanced in throughput. CONSTITUTION:A first and a second cassette chamber, 2A and 2B, are connected to a first transfer chamber 1, a first and a second pre-vacuum chamber, 3A and 3B, each equipped with a cooling means and a heating means are interposed between the first transfer chamber 1 and a second transfer chamber 4, and vacuum processing chambers 5A to 5C are connected to the first transfer chamber 1. The transfer of wafers between a cassette 22, the first transfer chamber 1, and the pre-vacuum chamber 3A (3B) is carried out in an inert gas atmosphere of certain pressure higher than an atmospheric pressure. Various wafer transfer routes are so provided between the first transfer chamber 1 and the second transfer chamber 4 as to be optionally selected, and furthermore a vacuum processing apparatus of this design is so constituted that a continuous processing or the same processing is optionally selected for wafers.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、真空処理装置に関す
る。
FIELD OF THE INVENTION The present invention relates to a vacuum processing apparatus.

【0002】[0002]

【従来の技術】半導体デバイスの微細化、集積化に伴
い、半導体製造装置についても種々の工夫がなされ、例
えば真空処理装置においては、プロセスの改革、変更に
容易に対処でき、また一貫処理により工程の短縮を図れ
るようにクラスタツールなどと呼ばれているマルチチャ
ンバシステムの開発がなされている。
2. Description of the Related Art With the miniaturization and integration of semiconductor devices, various innovations have been made in semiconductor manufacturing equipment. For example, in vacuum processing equipment, process reforms and changes can be easily dealt with, and integrated processing A multi-chamber system called a cluster tool has been developed to shorten the process.

【0003】このような方式を採用した真空処理装置と
しては、例えば特開平3−19252号公報に記載され
た多段真空隔離式処理装置が知られている。この処理装
置は、エッチング、デポジション等の処理を行なう複数
の真空処理チャンバーと、選択された各真空処理チャン
バーで所定の処理を行なうように被処理体を搬送する移
送ロボットステーションと、移送ロボットステーション
に連設され、上記各真空処理の前処理、後処理を夫々行
なう第1及び第2の中間処理チャンバーと、これら中間
処理チャンバーとロードロックチャンバーとの間で被処
理体を受け渡しするバッファロボットチャンバーとを備
えて構成されている。そして、被処理体を処理する場合
には、上述したように、上記各チャンバー及びロボット
ステーションは、いずれも多段階に真空引きされ、それ
ぞれの処理を真空下で行なうように構成されている。
As a vacuum processing apparatus adopting such a system, for example, a multistage vacuum isolation type processing apparatus described in Japanese Patent Laid-Open No. 19252/1993 is known. This processing apparatus includes a plurality of vacuum processing chambers that perform processing such as etching and deposition, a transfer robot station that transfers an object to be processed so that predetermined processing is performed in each selected vacuum processing chamber, and a transfer robot station. First and second intermediate processing chambers that are connected to each other and perform the pre-processing and the post-processing of the respective vacuum processing, and a buffer robot chamber that transfers the object to be processed between the intermediate processing chamber and the load lock chamber. And is configured. When processing the object to be processed, as described above, each of the chambers and the robot station is evacuated in multiple stages, and the respective processes are performed under vacuum.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、従来の
真空処理装置の場合には、ロードロックチャンバーと中
間処理チャンバー間の被処理体の受け渡しに伴う搬送を
真空中で行なうため、摩擦力で被処理体を支持体上に保
持した状態で被処理体を搬送する必要があり、被処理体
のカセットからの取り出し動作やカセットへの被処理体
の収納動作に伴って被処理体の位置ずれや被処理体の取
りこぼしなどが起こって搬送動作が不正確になるという
問題があった。
However, in the case of the conventional vacuum processing apparatus, since the transfer of the object to be processed between the load lock chamber and the intermediate processing chamber is carried out in a vacuum, the object to be processed is subjected to frictional force. It is necessary to convey the object to be processed while holding the object on the support, and the positional deviation of the object to be processed or the object to be processed is accompanied by the operation of taking out the object from the cassette or the operation of storing the object in the cassette. There has been a problem that the transfer operation becomes inaccurate because the processing body is missed.

【0005】またロードロックチャンバーと中間処理チ
ャンバ間の被処理体の受け取りを真空中で行うため、真
空ポンプ及び真空ゲージなどの付帯設備が必要になり、
特に真空ポンプは非常に高価であることから真空処理装
置の製造コストが高くなるという課題があった。
Further, since the object to be processed between the load lock chamber and the intermediate processing chamber is received in a vacuum, auxiliary equipment such as a vacuum pump and a vacuum gauge is required,
In particular, since the vacuum pump is very expensive, there is a problem that the manufacturing cost of the vacuum processing apparatus increases.

【0006】更に、第1及び第2の中間処理チャンバが
夫々前処理、後処理専用のものであるため、処理前の被
処理体は第1の中間処理チャンバを、処理後の被処理体
は第2の中間処理チャンバを夫々通ることになるが、移
送ロボットステーションとバッファロボットチャンバー
との雰囲気が異なるので中間処理チャンバで雰囲気の切
り替えが行われ、このため例えばカセットから被処理体
を搬入するにあたり被処理体の待機時間が長くなってス
ループットが低下し、マルチチャンバのトータル処理時
間の短縮という目的を十分達成させることができないと
いう問題があった。
Furthermore, since the first and second intermediate processing chambers are dedicated to pre-processing and post-processing, respectively, the unprocessed object is the first intermediate processing chamber and the processed object is Although the atmospheres of the transfer robot station and the buffer robot chamber are different from each other, the atmospheres are switched in the intermediate processing chambers, so that, for example, when an object to be processed is loaded from the cassette, the second intermediate processing chambers are passed through. There is a problem that the waiting time of the object to be processed becomes long and the throughput is lowered, and the purpose of shortening the total processing time of the multi-chamber cannot be sufficiently achieved.

【0007】本発明は、このような事情のもとになされ
たものであり、その目的は、複数の真空処理室を備えた
装置において、容器に対する被処理体の受け渡しを確実
に行うことができ、また高スループットで汎用性の高い
真空処理装置を提供することにある。
The present invention has been made under such circumstances, and an object thereof is to reliably deliver an object to be processed to a container in an apparatus having a plurality of vacuum processing chambers. Another object is to provide a vacuum processing apparatus with high throughput and high versatility.

【0008】[0008]

【課題を解決するための手段】請求項1の発明は、被処
理体を収納する容器が載置される容器載置部及び第1の
移載手段を備えたローダ室と、このローダ室に夫々接続
され、加熱手段及び冷却手段を兼備した第1の予備真空
室及び第2の予備真空室と、これら第1及び第2の予備
真空室に接続され、第2の移載手段を備えた移載室と、
この移載室に接続された複数の真空処理室と、前記第1
の予備真空室及び第2の予備真空室を挟んだローダ室と
移載室との間の被処理体の搬送経路を選択できるモード
選択手段と、を備え、前記容器載置部とローダ室と第1
または第2の予備真空室との間の被処理体の移載を前記
第1の移載手段により大気圧以上の気体雰囲気中で行
い、前記第1または第2の予備真空室と真空処理室との
間の被処理体の移載を前記第2の移載手段により真空雰
囲気中で行うことを特徴とする。
According to a first aspect of the present invention, there is provided a loader chamber having a container mounting portion for mounting a container for storing an object to be processed and a first transfer means, and the loader chamber. A first preliminary vacuum chamber and a second preliminary vacuum chamber, which are respectively connected to each other and have a heating means and a cooling means, and a second transfer means which is connected to the first and second preliminary vacuum chambers. Transfer room,
A plurality of vacuum processing chambers connected to the transfer chamber;
Mode selecting means for selecting a transfer path of the object to be processed between the loader chamber and the transfer chamber sandwiching the auxiliary vacuum chamber and the second auxiliary vacuum chamber, and the container placing part and the loader chamber. First
Alternatively, the transfer of the object to be processed between the second preparatory vacuum chamber and the second preparatory vacuum chamber is carried out by the first transposing means in a gas atmosphere at an atmospheric pressure or higher, and the first or second preparatory vacuum chamber and the vacuum processing chamber. The transfer of the object to be processed between and is performed by the second transfer means in a vacuum atmosphere.

【0009】請求項2の発明は、被処理体を収納する容
器が載置される容器載置部及び第1の移載手段を備えた
ローダ室と、このローダ室に予備真空室を介して接続さ
れ、第2の移載手段を備えた移載室と、この移載室に接
続された複数の真空処理室と、被処理体を複数の真空処
理室により連続的に処理するように搬送するモードと一
の真空処理室のみにより処理するように搬送するモード
との一方を選択できるモード選択手段と、を備え、前記
容器載置部と予備真空室との間の被処理体の移載を前記
第1の移載手段により大気圧以上の気体雰囲気中で行
い、前記予備真空室及び真空処理室間の被処理体の移載
を前記第2の移載手段により真空雰囲気中で行うことを
特徴とする。
According to a second aspect of the present invention, there is provided a loader chamber having a container mounting portion for mounting a container for storing the object to be processed and a first transfer means, and a loader chamber via a preliminary vacuum chamber. A transfer chamber that is connected and has a second transfer unit, a plurality of vacuum processing chambers that are connected to the transfer chamber, and an object to be processed that is continuously processed by the plurality of vacuum processing chambers. And a mode selecting means capable of selecting one of a transporting mode for carrying out processing by only one vacuum processing chamber, and transfer of the object to be processed between the container mounting part and the preliminary vacuum chamber. Is performed in a gas atmosphere at atmospheric pressure or higher by the first transfer means, and the object to be processed is transferred between the preliminary vacuum chamber and the vacuum processing chamber in a vacuum atmosphere by the second transfer means. Is characterized by.

【0010】請求項3の発明は、請求項1または請求項
2の発明において、容器載置部は、第1の容器載置部及
び第2の容器載置部からなり、モード選択手段は、第1
または第2の容器載置部上の容器のうちの一方から取り
出された被処理体が真空処理後に当該一方の容器に戻さ
れる搬送モードと、前記被処理体が真空処理後に他方の
容器に受け渡される搬送モードとのうちの一方を選択で
きる機能を備えていることを特徴とする。
According to a third aspect of the present invention, in the first or second aspect of the present invention, the container placing section comprises a first container placing section and a second container placing section, and the mode selecting means is First
Alternatively, a transfer mode in which an object to be processed taken out from one of the containers on the second container mounting portion is returned to the one container after vacuum processing, and the object to be processed is received in the other container after vacuum processing. It is characterized by having a function of selecting one of the delivered transfer modes.

【0011】[0011]

【作用】被処理体は、大気圧以上のガス雰囲気中にて容
器載置部から予備真空室に移載され、真空雰囲気中にて
移載室を介して真空処理室に搬入される。そして例えば
複数の真空処理室により連続処理されるかまたは一の真
空処理室により処理された後予備真空室を介して容器載
置部に収納される。容器に対する被処理体の受け渡しを
大気圧以上のガス雰囲気中にて行うので例えば真空吸着
を利用することができ、受け渡しが確実になる。
The object to be processed is transferred from the container mounting portion to the preliminary vacuum chamber in a gas atmosphere at atmospheric pressure or higher, and is carried into the vacuum processing chamber via the transfer chamber in a vacuum atmosphere. Then, for example, it is continuously processed in a plurality of vacuum processing chambers or processed in one vacuum processing chamber and then stored in the container mounting portion via the preliminary vacuum chamber. Since the object to be processed is transferred to and from the container in a gas atmosphere at atmospheric pressure or higher, for example, vacuum adsorption can be used, and the transfer is ensured.

【0012】また予備真空室にて加熱手段、冷却手段を
兼備させてこれらの通過モードを種々用意しているた
め、状況に応じたモードを選択することにより高スルー
プットを得ることができる。更に第1または第2のカセ
ットの一方から取り出したウエハをどちらのカセットに
戻すかについて自由に選択できるようにすることによ
り、より効率のよい移載を行うことができる。
In addition, since various heating modes and cooling modes are prepared in the preliminary vacuum chamber so as to serve as heating means and cooling means, a high throughput can be obtained by selecting a mode according to the situation. Further, it is possible to perform transfer more efficiently by making it possible to freely select which cassette to return the wafer taken out from one of the first and second cassettes.

【0013】[0013]

【実施例】図1及び図2は、夫々本発明の実施例を示す
平面図及び概観斜視図である。図中1は第1の移載室で
あり、この移載室1の両側には夫々ゲートバルブG1、
G2を介して第1のカセット室2A及び第2のカセット
室2Bが接続されている。これらカセット室2A、2B
は本実施例の真空処理装置の搬出入ポートに相当するも
のであり、昇降自在なカセットステージ21を備えてい
る。このカセットステージ2A、2Bは、この例では半
導体ウエハ(以下ウエハという)Wを収納するための容
器例えばウエハカセット(以下カセットという)22を
載置するための容器載置部に相当するものである。
1 and 2 are a plan view and a schematic perspective view showing an embodiment of the present invention, respectively. In the figure, 1 is a first transfer chamber, and gate valves G1 and G1 are provided on both sides of the transfer chamber 1, respectively.
The first cassette chamber 2A and the second cassette chamber 2B are connected via G2. These cassette chambers 2A, 2B
Corresponds to the carry-in / carry-out port of the vacuum processing apparatus of this embodiment, and is provided with a cassette stage 21 that can be raised and lowered. In this example, the cassette stages 2A and 2B correspond to a container for accommodating a semiconductor wafer (hereinafter referred to as a wafer) W, for example, a container mounting portion for mounting a wafer cassette (hereinafter referred to as a cassette) 22. .

【0014】前記移載室1及びカセット室2A、2Bは
気密構造に構成され、ローダ室10をなすものであり、
カセット室2A、2Bには、外部(作業室雰囲気)との
間を開閉するように夫々ゲートドアG3、G4が設けら
れると共に、コ字形の保持部材を備えた搬出入ロボット
23(図2参照)が設けられている。この搬出入ロボッ
ト23は、図2に示すように外部で前向きにセットされ
たカセット22をカセット室2A、2B内に搬入して横
向きにセットするように構成されており、ウエハカセッ
ト22は、カセット室2A、2B内に搬入された後カセ
ットステージ21により突き上げられて所定の位置まで
上昇する。また図2に示すように第1の移載室1及びカ
セット室2A、2Bには不活性ガス例えばN2 ガスを供
給するためのガス供給管20が各々接続されており、図
示しない圧力調整器により第1の移載室1及びカセット
室2A、2B内は大気圧以上例えば大気圧の不活性ガス
雰囲気とされる。
The transfer chamber 1 and the cassette chambers 2A, 2B are constructed in an airtight structure to form a loader chamber 10.
In the cassette chambers 2A and 2B, gate doors G3 and G4 are provided so as to open and close to the outside (work chamber atmosphere), respectively, and a loading / unloading robot 23 (see FIG. 2) having a U-shaped holding member is provided. It is provided. As shown in FIG. 2, the loading / unloading robot 23 is configured to load the cassette 22 which is set outward and is set in the cassette chambers 2A and 2B to set the cassette 22 horizontally. After being loaded into the chambers 2A and 2B, it is pushed up by the cassette stage 21 and raised to a predetermined position. Further, as shown in FIG. 2, a gas supply pipe 20 for supplying an inert gas such as N 2 gas is connected to each of the first transfer chamber 1 and the cassette chambers 2A and 2B, and a pressure regulator (not shown) is provided. As a result, the inside of the first transfer chamber 1 and the cassette chambers 2A and 2B is set to an inert gas atmosphere at or above atmospheric pressure.

【0015】前記第1の移載室1内には例えば多関節ア
ームよりなる第1の移載手段11と、ウエハWの中心及
びオリフラ(オリエンテーション)を位置合わせするた
めの回転ステージ12とが配設されており、この回転ス
テージ12は図示しない発受光部と共に位置合わせ手段
を構成する。前記第1の移載手段11は、前記第1及び
第2のカセット室2A、2B内のカセット22と前記回
転ステージ12と後述の予備真空室との間でウエハを移
載するためのものであり、ウエハ保持部であるアームの
先端部の両側には、ウエハWを真空吸着するための吸引
孔11aが形成されている。この吸引孔11aは図示し
ない吸引路を介して図示しない真空ポンプに接続されて
いる。
Inside the first transfer chamber 1, there are arranged a first transfer means 11 comprising, for example, an articulated arm, and a rotary stage 12 for aligning the center of the wafer W and the orientation flat (orientation). The rotary stage 12 constitutes a positioning unit together with a light emitting / receiving unit (not shown). The first transfer means 11 is for transferring a wafer between the cassette 22 in the first and second cassette chambers 2A and 2B, the rotary stage 12 and a preliminary vacuum chamber described later. In addition, suction holes 11a for vacuum-sucking the wafer W are formed on both sides of the tip of the arm that is the wafer holding unit. The suction hole 11a is connected to a vacuum pump (not shown) via a suction path (not shown).

【0016】前記第1の移載室1の後方側には、夫々ゲ
ートバルブG5、G6を介して第1の予備真空室3A及
び第2の予備真空室3Bが接続されており、更にこれら
予備真空室3A、3Bの後方側にはゲートバルブG7、
G8を介して第2の移載室4が接続されている。第1及
び第2の予備真空室3A、3Bは同一構造に構成されて
おり、図示していないが例えば上下に夫々加熱手段及び
冷却手段を備えると共に、例えば上下に夫々ウエハWを
載置することができる昇降自在な2段の載置具を備えて
いる。またこれら予備真空室3A、3Bには、図示しな
い真空ポンプが接続されると共に、例えばN2 ガスを供
給するためのガス供給管が接続されている。
A first preliminary vacuum chamber 3A and a second preliminary vacuum chamber 3B are connected to the rear side of the first transfer chamber 1 via gate valves G5 and G6, respectively, and these preliminary vacuum chambers 3A and 3B are connected. A gate valve G7 is provided on the rear side of the vacuum chambers 3A and 3B.
The second transfer chamber 4 is connected via G8. The first and second preliminary vacuum chambers 3A and 3B have the same structure, and although not shown, for example, upper and lower heating means and cooling means are provided, and, for example, the wafer W is placed on the upper and lower sides, respectively. It is equipped with a two-stage mounting tool that can move up and down. A vacuum pump (not shown) is connected to the preliminary vacuum chambers 3A and 3B, and a gas supply pipe for supplying N 2 gas, for example, is also connected to the auxiliary vacuum chambers 3A and 3B.

【0017】前記第2の移載室4内には、第1及び第2
の予備真空室3A、3Bと後述の3つの真空処理室5A
〜5Cとの間でウエハWを移載するための例えば多関節
ロボットよりなる第2の移載手段41が配置されてい
る。
In the second transfer chamber 4, the first and second transfer chambers are provided.
Preliminary vacuum chambers 3A, 3B and three vacuum processing chambers 5A described later.
Second transfer means 41, which is composed of, for example, an articulated robot, is provided for transferring the wafer W to and from 5C.

【0018】前記第2の移載室4には、夫々ゲートバル
ブG9〜G11を介して左右及び後方の三方に3つの真
空処理室5A〜5Cが接続されている。真空処理室5A
は例えば微細パターンが形成されたウエハ上に400〜
500℃の温度下でチタン膜をスパッタリングにより成
膜するためのものであり、真空処理室5Bは例えば微細
パターンにタングステン層をCVDにより形成するため
のものであり、また真空処理室5Cは、タングステン層
をエッチバックするためのものである。即ちこの例は真
空処理室5A〜5CによりウエハW上に連続処理を行う
場合であるが、各真空処理室5A〜5Cは同一の処理例
えばCVDを行うように構成してもよい。
The second transfer chamber 4 is connected to three vacuum processing chambers 5A to 5C on the left, right, and rear three sides via gate valves G9 to G11, respectively. Vacuum processing chamber 5A
Is, for example, 400 to 400 on a wafer on which a fine pattern is formed.
This is for forming a titanium film by sputtering at a temperature of 500 ° C., the vacuum processing chamber 5B is for forming a tungsten layer in a fine pattern by CVD, and the vacuum processing chamber 5C is tungsten. It is for etching back the layer. That is, in this example, the vacuum processing chambers 5A to 5C perform continuous processing on the wafer W, but the vacuum processing chambers 5A to 5C may be configured to perform the same processing, for example, CVD.

【0019】更に本実施例の真空処理装置は、図2に模
式的に示すようにウエハの搬送経路を選択するモード選
択手段6を備えている。このモード選択手段6は、第1
のカセット室2A、2B内のカセット22と真空処理室
5A〜5Cとの間のウエハの搬送経路に対応する種々の
モード、例えばモード1〜モードnの中からモードを選
択できる機能を有しているものであり、具体的には例え
ば各モードのプログラムを格納したメモリや中央処理装
置を含む制御部と、前記プログラムの選択や条件設定な
どを行う操作パネルとを含むユニットにより構成され
る。
Further, the vacuum processing apparatus of this embodiment is provided with a mode selecting means 6 for selecting a wafer transfer path as schematically shown in FIG. This mode selection means 6 is the first
Of the cassette chambers 2A and 2B and the vacuum processing chambers 5A to 5C, each of which has a function of selecting a mode from various modes corresponding to a wafer transfer path, for example, a mode 1 to a mode n. Specifically, for example, it is configured by a unit including a control unit including a memory storing a program of each mode and a central processing unit, and an operation panel for selecting the program and setting conditions.

【0020】ここで前記モードの一例を図3〜図8に示
す。図3は、第1のカセット室2Aのカセット22(一
方のカセット22)に収納されているウエハWが回転ス
テージ12(図3〜図8では図示の都合上符号を省略し
てある)、第1の予備真空室3Aを経た後、真空処理室
5A、5B、5Cに順次搬送されて連続処理が行われ、
その後第2の予備真空室3Bを経て、第2のカセット室
2Bのカセット22(他方のカセット22)に収納され
るモードを示している。
Here, an example of the mode is shown in FIGS. FIG. 3 shows that the wafer W housed in the cassette 22 (one cassette 22) of the first cassette chamber 2A includes the rotary stage 12 (reference numerals are omitted in FIGS. 3 to 8 for convenience of illustration), After passing through the preliminary vacuum chamber 3A of No. 1, it is sequentially transported to the vacuum processing chambers 5A, 5B, 5C to perform continuous processing,
After that, the mode is shown in which the second preliminary vacuum chamber 3B is passed through and the cassette 22 (the other cassette 22) in the second cassette chamber 2B is accommodated.

【0021】図4は、図3のモードにおいて処理後のウ
エハWが他方のカセット22ではなく一方のカセット2
2(元のカセット22)に戻るモードを示している。図
5は、図3のモードにおいて搬入時及び搬出時のいずれ
の場合も、ウエハWが第1の予備真空室3Aを通る経路
と第2の予備真空室3Bを通る経路との両方を使用して
いるモード、つまり2つの予備真空室3A、3B内を例
えば交互に搬送されるモードである。
FIG. 4 shows that the wafer W after processing in the mode of FIG.
The mode for returning to 2 (the original cassette 22) is shown. FIG. 5 shows that the wafer W uses both the route passing through the first preliminary vacuum chamber 3A and the route passing through the second preliminary vacuum chamber 3B in both cases of loading and unloading in the mode of FIG. Mode, that is, a mode in which the two preliminary vacuum chambers 3A and 3B are alternately transported, for example.

【0022】そして図5のモードでは一方のカセット2
2から取り出されたウエハWが処理後に他方のカセット
22に収納されるが、これに対し図6のモードは、一方
のカセット22内のウエハW及び他方のカセット22内
のウエハWが交互に取り出されると共に第1及び第2の
予備真空室3A、3B内を交互に搬送され、夫々元のカ
セット22内に戻されるモードである。
In the mode of FIG. 5, one cassette 2
The wafer W taken out from the No. 2 wafer is stored in the other cassette 22 after processing, whereas in the mode shown in FIG. 6, the wafer W in one cassette 22 and the wafer W in the other cassette 22 are taken out alternately. In this mode, the sheets are alternately conveyed in the first and second preliminary vacuum chambers 3A and 3B and returned to the original cassette 22.

【0023】図7のモードは、搬入時にはウエハWが第
1及び第2の予備真空室3A、3Bを交互に搬送され、
搬出時には一方の予備真空室3B(あるいは3A)を通
るモードである。更にまた図8は、ウエハWを連続処理
する代りに、例えば各真空処理室5A〜5Cを同一の処
理を行うようにセッティングしておき、一方のカセット
22内のウエハWを真空処理室5A〜5Cのいずれかに
搬入し、処理後に例えば他方のカセット22に収納する
モードである。
In the mode shown in FIG. 7, the wafer W is transferred alternately in the first and second preliminary vacuum chambers 3A and 3B at the time of loading,
This mode is a mode in which one of the auxiliary vacuum chambers 3B (or 3A) is passed during unloading. Further, in FIG. 8, instead of continuously processing the wafer W, for example, the respective vacuum processing chambers 5A to 5C are set so as to perform the same processing, and the wafer W in one cassette 22 is set to the vacuum processing chambers 5A to 5C. In this mode, the sheet is loaded into any one of 5C and stored in the other cassette 22 after processing.

【0024】以上のモードは一例にすぎず、図8に示す
ように各真空処理室5A〜5Cで同一処理を行う場合に
図3〜図7に示すモードを組み合わせたモードを作成し
てもよいし、上述以外のモードを作成してもよい。そし
てこれらモードを選択するにあたっては、オペレータが
各モードを指定してもよいが、例えば各真空処理室5A
〜5Cの処理の種類や、当該真空処理装置と外部ステー
ションとのインターフェイスの状況などに応じてコンピ
ュータが最適のモードを選択するようにしてもよい。
The above modes are merely examples, and when the same processing is performed in each vacuum processing chamber 5A to 5C as shown in FIG. 8, a mode in which the modes shown in FIGS. 3 to 7 are combined may be created. However, modes other than the above may be created. When selecting these modes, the operator may specify each mode. For example, each vacuum processing chamber 5A
The computer may select the optimum mode depending on the type of processing of 5C or the state of the interface between the vacuum processing apparatus and the external station.

【0025】次に上述実施例の作用について述べる。例
えば図5に示すモードを例にとって説明すると、先ずウ
エハWを例えば25枚収納したカセット22が搬出入ロ
ボット23(図2参照)により第1のカセット室2A内
のカセットステージ21上に、開口面を第1の移載室1
側に向けて載置される。続いてゲートドアG3を閉じ、
第1のカセット室2A内を大気圧の不活性ガス雰囲気に
すると共にカセットステージ21によりカセット22が
所定の位置まで上昇する。
Next, the operation of the above embodiment will be described. For example, taking the mode shown in FIG. 5 as an example, first, a cassette 22 containing, for example, 25 wafers W is opened on the cassette stage 21 in the first cassette chamber 2A by the loading / unloading robot 23 (see FIG. 2). The first transfer room 1
It is placed facing the side. Then close the gate door G3,
The inside of the first cassette chamber 2A is set to an inert gas atmosphere at atmospheric pressure, and the cassette stage 21 raises the cassette 22 to a predetermined position.

【0026】次にゲートバルブG1を開き、カセット2
2内のウエハWが第1の移載手段41のアームに真空吸
着され、予め不活性ガス雰囲気にされている第1の移載
室1内に、第1の移載手段11により搬入され、更に位
置合わせ手段の一部をなす回転ステージ12に、前記真
空吸着を解除して受け渡され、ここでオリフラ合わせ及
び中心の位置合わせが行われる。
Next, the gate valve G1 is opened, and the cassette 2
The wafer W in 2 is vacuum-sucked by the arm of the first transfer means 41, and is carried in by the first transfer means 11 into the first transfer chamber 1 in which an inert gas atmosphere has been set in advance. Further, the vacuum suction is released and transferred to the rotary stage 12 which is a part of the alignment means, where the orientation flat alignment and the center alignment are performed.

【0027】しかる後にウエハWは、予め大気圧の不活
性ガス雰囲気にされている第1の予備真空室3A内に搬
入されて、例えば2段の載置具の上段側に載置され、ゲ
ートバルブG5を閉じ、例えば予備真空室3A内を10
-3〜10-6Torrの真空度に減圧すると共に例えば5
00℃に予備加熱される。また続くウエハWは、同様に
して第2の予備真空室3Bに搬入され、予備加熱され
る。予備加熱後ゲートバルブG7を開いて、予め10-7
〜10-8Torrの真空度に減圧された第2の移載室4
と当該予備真空室3Aとの間を連通し、既に連続処理さ
れたウエハWが第2の移載手段41により第1の予備真
空室3Aの下段側の載置具に載置された後、当該第2の
移載手段41により、予備加熱済みである上段側のウエ
ハWが第1の予備真空室3Aから取り出され、第1の真
空処理室5A内に搬入される。なお第2の予備真空室3
Bと第2の移載手段41との間のウエハWの受け渡しも
同様にして行われる。
Thereafter, the wafer W is loaded into the first preliminary vacuum chamber 3A which has been previously made to have an inert gas atmosphere at atmospheric pressure, and is placed on the upper stage side of, for example, the two-stage placing tool, and the gate is placed on the gate. The valve G5 is closed and, for example, the inside of the preliminary vacuum chamber 3A
-3 to 10 -6 Torr and reduce the vacuum to 5
Preheated to 00 ° C. The subsequent wafer W is similarly loaded into the second preliminary vacuum chamber 3B and preheated. After preheating, open the gate valve G7 and set 10 -7 in advance.
Second transfer chamber 4 depressurized to a vacuum degree of -10 -8 Torr
And the preliminary vacuum chamber 3A are communicated with each other, and after the wafer W that has already been continuously processed is mounted on the mounting tool on the lower side of the first preliminary vacuum chamber 3A by the second transfer means 41, By the second transfer means 41, the wafer W on the upper side that has been preheated is taken out from the first preliminary vacuum chamber 3A and carried into the first vacuum processing chamber 5A. The second auxiliary vacuum chamber 3
The transfer of the wafer W between B and the second transfer means 41 is performed in the same manner.

【0028】そして真空処理室5Aにて例えばスパッタ
リングによりチタン膜が形成されたウエハWは、真空処
理室5B及び真空処理室5Cに順次搬入されて先述した
ように夫々CVDによるタングステン膜の成膜及びエッ
チバックが行われ、しかる後にウエハWの搬入時の説明
で述べたように予備真空室3A(または3B)の下段側
の載置具に載置されて冷却される。
Then, the wafer W on which the titanium film is formed by, for example, sputtering in the vacuum processing chamber 5A is successively carried into the vacuum processing chamber 5B and the vacuum processing chamber 5C, and as described above, the formation of the tungsten film by the CVD and the deposition of the tungsten film, respectively. Etching back is performed, and thereafter, as described in the description of the loading of the wafer W, the wafer W is mounted on the mounting tool on the lower stage side of the preliminary vacuum chamber 3A (or 3B) and cooled.

【0029】更に予備真空室3A(または3B)内を大
気圧の不活性ガス雰囲気にした後ゲートバルブG7(ま
たはG8)を開き、冷却されたウエハWが第1の移載手
段11により第2のカセット室2B内のカセット22内
に収納される。その後先述した搬入動作の逆の動作によ
りカセット22が搬出入ロボット23により外部に搬出
される。
Further, after making the inside of the preliminary vacuum chamber 3A (or 3B) into an inert gas atmosphere at atmospheric pressure, the gate valve G7 (or G8) is opened, and the cooled wafer W is transferred to the second by the first transfer means 11. It is stored in the cassette 22 in the cassette chamber 2B. After that, the cassette 22 is carried out by the carry-in / carry-out robot 23 by the reverse operation of the carry-in operation described above.

【0030】そしてウエハWを搬送するモードについて
は、真空処理の種類により、あるいは連続処理か一つの
真空処理室のみを用いた処理(例えば同一の真空処理)
かにより、更にはその他の事情例えば搬出入ロボットの
故障などにより、モード選択手段6にメモリされている
モードの中から例えばオペレータがあるいは上位のホス
トコンピュータが適切なモードを選択する。
Regarding the mode for transferring the wafer W, depending on the type of vacuum processing, continuous processing or processing using only one vacuum processing chamber (for example, the same vacuum processing)
Depending on other circumstances, for example, due to a failure of the carry-in / carry-out robot, an operator or an upper host computer selects an appropriate mode from the modes stored in the mode selection means 6.

【0031】このような実施例によれば、カセット22
及び第1の移載手段41が置かれている領域が外部から
仕切られているため、この中をクリーンな雰囲気とする
ことにより、真空処理室5A〜5C内への不純物の混入
を極力抑えることができると共に、その雰囲気を大気圧
の不活性ガス雰囲気にしているので真空吸着を利用して
ウエハWを搬送することができ、従ってウエハWの位置
ずれや脱落を防止し、確実な搬送を行うことができる。
そして不活性ガス雰囲気にしているので真空処理後のウ
エハWを直ぐに大気に触れさせなくて済みこのためウエ
ハ表面の化学的反応を抑えることができる。またカセッ
ト室2A、2B及び第1の移載室1を真空にするための
真空ポンプや真空ゲージ等の付帯設備を設けなくて済む
ため、装置を安価にかつコンパクトに製作できる。
According to such an embodiment, the cassette 22
Since the area in which the first transfer means 41 is placed is partitioned from the outside, a clean atmosphere is provided in the area to minimize the mixture of impurities into the vacuum processing chambers 5A to 5C. In addition, since the atmosphere is an inert gas atmosphere at atmospheric pressure, it is possible to transfer the wafer W by utilizing vacuum suction, and therefore, the wafer W can be prevented from being displaced or dropped and can be reliably transferred. be able to.
Further, since the atmosphere of the inert gas is used, it is not necessary to immediately expose the wafer W after the vacuum processing to the atmosphere, so that the chemical reaction on the surface of the wafer can be suppressed. Further, since it is not necessary to provide auxiliary equipment such as a vacuum pump and a vacuum gauge for evacuating the cassette chambers 2A and 2B and the first transfer chamber 1, the device can be manufactured inexpensively and compactly.

【0032】そして第1及び第2の予備真空室3A、3
Bに各々加熱手段及び冷却手段を兼備させて、予備真空
室3A、3Bの通過のモードを種々用意し、これらの中
から適切なモードを選択すると共に、一方のカセット2
2から取り出したウエハWをどちらのカセット22に収
納するかについても選択できるようにしているため、真
空処理室5A〜5Cの処理時間や次のカセット22が送
られてくるタイミングなどに応じて効率のよいモードに
よりウエハWを搬送でき、従ってスループットを向上さ
せることができる。
The first and second preliminary vacuum chambers 3A, 3
B is provided with both heating means and cooling means, and various modes for passing through the preliminary vacuum chambers 3A and 3B are prepared. An appropriate mode is selected from these modes, and one cassette 2
Since it is possible to select which cassette 22 to store the wafer W taken out from No. 2, the efficiency depends on the processing time of the vacuum processing chambers 5A to 5C and the timing when the next cassette 22 is sent. The wafer W can be transferred in a good mode, so that the throughput can be improved.

【0033】更に真空処理室5A〜5Cにより連続処理
を行うモード、及び真空処理室5A〜5Cを並行して同
一の処理を行うモードのうちの一方を選択できるので用
途が広く、高い汎用性が得られる。
Further, since one of a mode in which continuous processing is performed in the vacuum processing chambers 5A to 5C and a mode in which the same processing is performed in parallel in the vacuum processing chambers 5A to 5C can be selected, the application is wide and versatile. can get.

【0034】真空処理室5A〜5Cは、連続処理、同一
処理のいずれにも適用できるように、また種々の真空処
理に対応できるように第2の移載室4に着脱自在に接続
されている。真空処理室における真空処理としては、ス
パッタリング、CVD、エッチング、アッシング、酸
化、拡散など種々の処理を挙げることができる。
The vacuum processing chambers 5A to 5C are detachably connected to the second transfer chamber 4 so as to be applicable to both continuous processing and the same processing, and to be compatible with various vacuum processing. . Examples of the vacuum treatment in the vacuum treatment chamber include various treatments such as sputtering, CVD, etching, ashing, oxidation and diffusion.

【0035】なお本発明は、第1の移載室1の中に第1
及び第2のカセット22を配置する構成や予備真空室が
1個のみの構成であってもよく、カセット22、第1の
移載室1及び予備真空室間でウエハを移載する場合の雰
囲気ガスとしては、不活性ガス以外に例えば十分水分が
除去された乾燥空気を用いてもよい。不活性ガスを用い
る場合には窒素ガス以外にアルゴンガスや炭酸ガスなど
を用いてもよい。また真空処理室は2個あるいは4個以
上であってもよく、被処理体としてはLCD基板などで
あってもよい。
In the present invention, the first transfer chamber 1 is provided with a first
Also, the configuration in which the second cassette 22 is arranged and the configuration in which only one preliminary vacuum chamber is provided may be adopted, and the atmosphere when the wafer is transferred between the cassette 22, the first transfer chamber 1 and the preliminary vacuum chamber. As the gas, in addition to the inert gas, for example, dry air from which water is sufficiently removed may be used. When an inert gas is used, argon gas or carbon dioxide gas may be used instead of nitrogen gas. The number of vacuum processing chambers may be two or four or more, and the object to be processed may be an LCD substrate or the like.

【0036】[0036]

【発明の効果】請求項1の発明によれば、クラスタツー
ルなどと呼ばれている複数の真空処理室を備えた真空処
理装置において、容器載置部と予備真空室との間の被処
理体の移載を大気圧以上の気体雰囲気中で行っているた
め真空吸着を利用して被処理体を移載手段に保持でき、
従って容器に対する被処理体の受け渡しを確実に行うこ
とができる。また第1及び第2の予備真空室にて加熱手
段、冷却手段を兼備させてこれらの通過モードを種々用
意しているため、状況に応じたモードを選択することに
より高スループットを得ることができる。更に請求項3
の発明のように第1または第2のカセットの一方から取
り出したウエハをどちらのカセットに戻すかについて自
由に選択できるようにすることにより、より効率のよい
移載を行うことができる。
According to the invention of claim 1, in a vacuum processing apparatus provided with a plurality of vacuum processing chambers called a cluster tool or the like, an object to be processed between the container mounting portion and the preliminary vacuum chamber is provided. Since the transfer is performed in a gas atmosphere at atmospheric pressure or higher, the object to be processed can be held on the transfer means by utilizing vacuum adsorption,
Therefore, the object to be processed can be reliably delivered to and from the container. Further, since the heating means and the cooling means are combined in the first and second preliminary vacuum chambers and various passing modes are prepared, a high throughput can be obtained by selecting a mode according to the situation. . Further claim 3
As in the invention described above, by more freely selecting which cassette to return the wafer taken out from one of the first and second cassettes, more efficient transfer can be performed.

【0037】請求項2の発明によれば、複数の真空処理
室により連続処理を行うモード、及び一の真空処理室の
みにより処理を行うモードを選択できるので高い、汎用
性が得られる。
According to the second aspect of the present invention, it is possible to select a mode in which continuous processing is performed by a plurality of vacuum processing chambers and a mode in which processing is performed in only one vacuum processing chamber, so that high versatility can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例を示す平面図である。FIG. 1 is a plan view showing an embodiment of the present invention.

【図2】本発明の実施例の概観を示す斜視図である。FIG. 2 is a perspective view showing an overview of an embodiment of the present invention.

【図3】本発明の実施例におけるウエハの移載のモード
を示す説明図である。
FIG. 3 is an explanatory diagram showing a wafer transfer mode according to the embodiment of the present invention.

【図4】本発明の実施例におけるウエハの移載のモード
を示す説明図である。
FIG. 4 is an explanatory diagram showing a wafer transfer mode according to the embodiment of the present invention.

【図5】本発明の実施例におけるウエハの移載のモード
を示す説明図である。
FIG. 5 is an explanatory diagram showing a wafer transfer mode in the embodiment of the present invention.

【図6】本発明の実施例におけるウエハの移載のモード
を示す説明図である。
FIG. 6 is an explanatory diagram showing a wafer transfer mode according to the embodiment of the present invention.

【図7】本発明の実施例におけるウエハの移載のモード
を示す説明図である。
FIG. 7 is an explanatory diagram showing a wafer transfer mode according to the embodiment of the present invention.

【図8】本発明の実施例におけるウエハの移載のモード
を示す説明図である。
FIG. 8 is an explanatory diagram showing a wafer transfer mode according to the embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 第1の移載室 10 ローダ室 11 第1の移載手段 2A 第1のカセット室 2B 第2のカセット室 21 カセットステージ 22 カセット 3A 第1の予備真空室 3B 第2の予備真空室 4 第2の移載室 5A〜5C 真空処理室 DESCRIPTION OF SYMBOLS 1 1st transfer chamber 10 loader chamber 11 1st transfer means 2A 1st cassette chamber 2B 2nd cassette chamber 21 cassette stage 22 cassette 3A 1st preliminary vacuum chamber 3B 2nd preliminary vacuum chamber 4 4th 2 transfer chamber 5A-5C vacuum processing chamber

フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H01L 21/302 B 9277−4M Continuation of the front page (51) Int.Cl. 5 Identification number Office reference number FI technical display location H01L 21/302 B 9277-4M

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 被処理体を収納する容器が載置される容
器載置部及び第1の移載手段を備えたローダ室と、 このローダ室に夫々接続され、加熱手段及び冷却手段を
兼備した第1の予備真空室及び第2の予備真空室と、 これら第1及び第2の予備真空室に接続され、第2の移
載手段を備えた移載室と、 この移載室に接続された複数の真空処理室と、 前記第1の予備真空室及び第2の予備真空室を挟んだロ
ーダ室と移載室との間の被処理体の搬送経路を選択でき
るモード選択手段と、 を備え、 前記容器載置部と第1または第2の予備真空室との間の
被処理体の移載を前記第1の移載手段により大気圧以上
の気体雰囲気中で行い、 前記第1または第2の予備真空室と真空処理室との間の
被処理体の移載を前記第2の移載手段により真空雰囲気
中で行うことを特徴とする真空処理装置。
1. A loader chamber provided with a container placement part for placing a container for containing an object to be processed and a first transfer means, and a loader chamber connected respectively to the heating means and a cooling means. The first preliminary vacuum chamber and the second preliminary vacuum chamber, the transfer chamber that is connected to the first and second preliminary vacuum chambers and that includes the second transfer means, and the transfer chamber that is connected to the transfer chamber. A plurality of vacuum processing chambers, and a mode selecting unit capable of selecting a transfer path of the object to be processed between the loader chamber and the transfer chamber sandwiching the first preliminary vacuum chamber and the second preliminary vacuum chamber, The transfer of the object to be processed between the container mounting section and the first or second preliminary vacuum chamber is performed by the first transfer means in a gas atmosphere at atmospheric pressure or higher, Alternatively, the transfer of the object to be processed between the second preliminary vacuum chamber and the vacuum processing chamber is performed in the vacuum atmosphere by the second transfer means. Vacuum processing apparatus, which comprises carrying out.
【請求項2】 被処理体を収納する容器が載置される容
器載置部及び第1の移載手段を備えたローダ室と、 このローダ室に予備真空室を介して接続され、第2の移
載手段を備えた移載室と、 この移載室に接続された複数の真空処理室と、 被処理体を複数の真空処理室により連続的に処理するよ
うに搬送するモードと一の真空処理室のみにより処理す
るように搬送するモードとの一方を選択できるモード選
択手段と、 を備え、 前記容器載置部と予備真空室との間の被処理体の移載を
前記第1の移載手段により大気圧以上の気体雰囲気中で
行い、 前記予備真空室と真空処理室との間の被処理体の移載を
前記第2の移載手段により真空雰囲気中で行うことを特
徴とする真空処理装置。
2. A loader chamber provided with a container placing section for placing a container for containing an object to be processed and a first transfer means, and a loader chamber connected to the loader chamber via a preliminary vacuum chamber, A transfer chamber having a transfer means, a plurality of vacuum processing chambers connected to the transfer chamber, and a mode for transporting an object to be continuously processed by the plurality of vacuum processing chambers. A mode selecting means capable of selecting one of a mode of carrying so as to be processed only by the vacuum processing chamber, and a transfer of the object to be processed between the container mounting part and the preliminary vacuum chamber. The transfer means performs the transfer in a gas atmosphere at atmospheric pressure or higher, and the transfer of the object to be processed between the preliminary vacuum chamber and the vacuum processing chamber is performed in the vacuum atmosphere by the second transfer means. Vacuum processing equipment.
【請求項3】 容器載置部は、第1の容器載置部及び第
2の容器載置部からなり、 モード選択手段は、第1または第2の容器載置部上の容
器のうちの一方から取り出された被処理体が真空処理後
に当該一方の容器に戻される搬送モードと、前記被処理
体が真空処理後に他方の容器に受け渡される搬送モード
とのうちの一方を選択できる機能を備えていることを特
徴とする請求項1または請求項2記載の真空処理装置。
3. The container placing part comprises a first container placing part and a second container placing part, and the mode selecting means is one of the containers on the first or second container placing part. A function capable of selecting one of a transfer mode in which an object to be processed taken out from one side is returned to the one container after vacuum processing and a transfer mode in which the object to be processed is transferred to the other container after vacuum processing The vacuum processing apparatus according to claim 1 or 2, further comprising:
JP12521893A 1992-10-15 1993-04-28 Vacuum processing equipment Expired - Fee Related JP3151582B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP12521893A JP3151582B2 (en) 1993-04-28 1993-04-28 Vacuum processing equipment
KR1019930021322A KR100242534B1 (en) 1992-10-15 1993-10-14 Multi Chamber System
TW085212876U TW327479U (en) 1992-10-15 1993-11-02 Vacuum processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12521893A JP3151582B2 (en) 1993-04-28 1993-04-28 Vacuum processing equipment

Publications (2)

Publication Number Publication Date
JPH06314729A true JPH06314729A (en) 1994-11-08
JP3151582B2 JP3151582B2 (en) 2001-04-03

Family

ID=14904786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12521893A Expired - Fee Related JP3151582B2 (en) 1992-10-15 1993-04-28 Vacuum processing equipment

Country Status (1)

Country Link
JP (1) JP3151582B2 (en)

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