JPH06267864A - Vapor growth device - Google Patents
Vapor growth deviceInfo
- Publication number
- JPH06267864A JPH06267864A JP5053604A JP5360493A JPH06267864A JP H06267864 A JPH06267864 A JP H06267864A JP 5053604 A JP5053604 A JP 5053604A JP 5360493 A JP5360493 A JP 5360493A JP H06267864 A JPH06267864 A JP H06267864A
- Authority
- JP
- Japan
- Prior art keywords
- heater
- wafer
- temperature
- section
- vapor phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ウエハにシリコン等の
薄膜を堆積させる気相成長装置に係わり、特に、ウエハ
を加熱する加熱装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor phase growth apparatus for depositing a thin film such as silicon on a wafer, and more particularly to a heating apparatus for heating a wafer.
【０００２】[0002]
【従来の技術】気相成長装置としては、図２に示すよう
なものが知られている。すなわち、図中１はウエハで、
このウエハ１はホルダ２により支持されている。2. Description of the Related Art As a vapor phase growth apparatus, one shown in FIG. 2 is known. That is, 1 is a wafer in the figure,
The wafer 1 is supported by a holder 2.
【０００３】上記ウエハ１及びホルダ２の下部側には第
１および第２のヒータ３，４が配設され、上記第１のヒ
ータ３には電流を供給するための電極１５、１６が接続
され、第２のヒータ４には電流を供給するため電極１
７、１８が接続されている。上記電極１５〜１８には電
流供給部材１９〜２２を介して反応炉の外部より電流が
供給される。First and second heaters 3 and 4 are disposed below the wafer 1 and holder 2, and electrodes 15 and 16 for supplying an electric current are connected to the first heater 3. , The electrode 1 for supplying a current to the second heater 4.
7, 18 are connected. Electric current is supplied to the electrodes 15 to 18 from the outside of the reaction furnace via current supply members 19 to 22.
【０００４】また、上記第１および第２のヒータ３，４
の下部側には２枚の反射板５，５が設けられ、これら反
射板５，５により、第１および第２のヒータ３，４の下
方部に位置する回転機構、その他への熱輻射等を防止し
ている。図中６は、上記ホルダ２およびウエハ１を支え
るサセプタ支えである。上記ウエハ１、ホルダ２及びサ
セプタ支え６は、回転機構７により回転される。The first and second heaters 3 and 4 are also provided.
Is provided with two reflection plates 5 and 5 on the lower side thereof, and these reflection plates 5 and 5 radiate heat to a rotating mechanism located below the first and second heaters 3 and 4, and the like. Is being prevented. Reference numeral 6 in the drawing denotes a susceptor support for supporting the holder 2 and the wafer 1. The wafer 1, the holder 2 and the susceptor support 6 are rotated by a rotating mechanism 7.
【０００５】一方、図中８、９はウエハ１やホルダ２か
ら放出される輻射熱を収集するための収熱部で、これら
収熱部８、９に収集された熱はその熱量に応じて測温装
置１０により温度変換される。On the other hand, reference numerals 8 and 9 in the figure denote heat collecting portions for collecting the radiant heat emitted from the wafer 1 and the holder 2. The heat collected in these heat collecting portions 8 and 9 is measured according to the amount of heat. The temperature is converted by the warming device 10.
【０００６】上記測温装置１０で変換された温度データ
は温度制御装置１１に伝送され、該温度制御装置１１，
１１は予め指定された温度になるよう第１および第２の
ヒータ３、ヒータ４を制御する。なお、上記温度制御装
置１１は各ヒータ３，４毎に設置される。但し、ヒータ
３，４は複数の測温点データをもとに制御しても良い。
しかして、上記ウエハ１は第１および第２のヒータ３，
４により、例えば１２００℃程度まで加熱される。The temperature data converted by the temperature measuring device 10 is transmitted to the temperature control device 11, and the temperature control device 11,
Reference numeral 11 controls the first and second heaters 3 and 4 so as to reach a temperature designated in advance. The temperature control device 11 is installed for each heater 3, 4. However, the heaters 3 and 4 may be controlled based on a plurality of temperature measurement point data.
Thus, the wafer 1 has the first and second heaters 3,
4, the temperature is increased to about 1200 ° C., for example.
【０００７】なお、図中１２は石英ライナで、この石英
ライナ１２はチャンバ１３の内側に設置され、ウエハ１
上に形成されるエピタキシャル層内にＦｅなどの不純物
が混入するのを防いでいる。また、上記チャンバ１３
は、冷却水により冷却されている。上記石英ライナ１２
の上面部にはノズル１４が設けられ、このノズル１４の
供給口１４ａ…からは下記に示すガスが層流にして流出
される。つぎに、上記した装置の動作について説明す
る。まず、前記ノズル１４からＨ2 ガスを所定流量で流
し、かつ前記サセプタ支え６を所定の回転数で回転させ
る。Reference numeral 12 in the drawing denotes a quartz liner, which is installed inside the chamber 13
Impurities such as Fe are prevented from being mixed into the epitaxial layer formed above. In addition, the chamber 13
Are cooled by cooling water. Quartz liner 12
Is provided with a nozzle 14 and the following gases are laminarly flown out from the supply ports 14a of the nozzle 14. Next, the operation of the above device will be described. First, H 2 gas is caused to flow from the nozzle 14 at a predetermined flow rate, and the susceptor support 6 is rotated at a predetermined rotation speed.
【０００８】一方、前記温度制御装置１１には、予め各
測温点の昇温プログラムを設定しておく。例えば、ウエ
ハ１に関しては８００℃に２分間保持した後、３分間で
１１００℃まで昇温し、さらに、５分間１１００℃を保
持するといったシーケンスをプログラムしておく。温度
制御装置１１のプログラムをスタートさせれば、所定時
間でウエハ１あるいはホルダ２は例えば１１００℃に達
する。そして、加熱された状態でＳｉＣｌ2 Ｈ2 のよう
なシリコン原子を含んだガスをＨ2 ガスと共に供給す
る。前記シリコンを含んだガスは、ウエハ１の表面近傍
で熱分解してウエハ１にシリコンが析出する。また、シ
リコン層内にＰやＢのような不純物を供給する場合があ
る。この場合、前記の２種類のガスに加えＰＨ5 やＢＦ
3 のようなドーパンドガスを混入させる。前記ガスを所
定時間ウエハ１上に供給することにより、ノンドープの
エピタキシャル層や、不純物を混入させたエピタキシャ
ル層を得ることができる。ところで、上記ウエハ１面内
の温度分布が一様でないと、プロセス終了後、ウエハ１
面内の比抵抗分布がばらついてしまう。また、ウエハ１
の外周部の温度分布あるいは、ウエハ１の内周部の温度
分布が悪いと、スリップという結晶欠陥を生じる。それ
故、以下のことが重要になる。 （イ）第１のヒータ３と第２のヒータ４の出力配分（特
にウエハ１の外周部に関して）を適性値にすること。On the other hand, in the temperature control device 11, a temperature raising program for each temperature measuring point is set in advance. For example, a sequence is programmed in which the wafer 1 is held at 800 ° C. for 2 minutes, heated to 1100 ° C. in 3 minutes, and held at 1100 ° C. for 5 minutes. If the program of the temperature control device 11 is started, the wafer 1 or the holder 2 reaches 1100 ° C., for example, in a predetermined time. Then, in a heated state, a gas containing silicon atoms such as SiCl 2 H 2 is supplied together with H 2 gas. The gas containing silicon is thermally decomposed near the surface of the wafer 1 to deposit silicon on the wafer 1. Further, impurities such as P and B may be supplied into the silicon layer. In this case, in addition to the above two types of gas, PH 5 and BF
Incorporate a dope gas like 3 . By supplying the gas onto the wafer 1 for a predetermined time, a non-doped epitaxial layer or an epitaxial layer containing impurities can be obtained. By the way, if the temperature distribution in the surface of the wafer 1 is not uniform, the wafer 1 is not processed after the process.
The in-plane resistivity distribution varies. Also, the wafer 1
If the temperature distribution of the outer peripheral portion of the wafer or the temperature distribution of the inner peripheral portion of the wafer 1 is poor, a crystal defect called slip occurs. Therefore, the following are important: (A) The output distribution of the first heater 3 and the second heater 4 (particularly with respect to the outer peripheral portion of the wafer 1) is set to an appropriate value.
【０００９】（ロ）第１のヒータ３と第２のヒータ４の
ヒータパターンを、ウエハ１上の温度が一様になるよう
に調整すること（特に、ウエハ１の直下に位置するヒー
タ３のウエハ１内周部に関して）。 以上の２つを満足させるヒータパターンを、形成するこ
とは非常に難しい。(B) Adjusting the heater patterns of the first heater 3 and the second heater 4 so that the temperature on the wafer 1 becomes uniform (especially, the heater 3 located immediately below the wafer 1). Regarding the inner periphery of the wafer 1). It is very difficult to form a heater pattern that satisfies the above two requirements.
【００１０】[0010]
【発明が解決しようとする課題】前記（イ）項の問題
は、ヒータ制御のための測温点の位置と温調器により定
まると思われる。実験によると、ウエハ１の外周部の均
熱をとることが、スリップの発生を大いに抑制するの
で、非常に重要であることがわかっている。それ故、第
１のヒータ３と第２のヒータ４はウエハ１の外周部の均
熱を得るべく動作している。この時、ウエハ１の内周に
関しては、第２のヒータ４の影響はほとんど皆無の為、
第１のヒータ３のパターン形状に依存する度合いが非常
に大きい。The problem of the above item (a) seems to be determined by the position of the temperature measuring point for controlling the heater and the temperature controller. Experiments have shown that it is very important to equalize the temperature of the outer peripheral portion of the wafer 1 because it greatly suppresses the occurrence of slip. Therefore, the first heater 3 and the second heater 4 are operating so as to obtain uniform heating of the outer peripheral portion of the wafer 1. At this time, since the second heater 4 has almost no influence on the inner circumference of the wafer 1,
The degree of dependence on the pattern shape of the first heater 3 is very large.
【００１１】そこで、図３に示すヒータを第１〜第３の
ヒータ部２３ａ，２３ｂ，２３ｃに分割する方法が考え
られているが、ゾーンを増やさねばならず、コストがア
ップしてしまう。それに対し、前記（ロ）項について
は、以下の問題が生じ困難となっている。 （ａ）ヒータパターンの良否を決定するには、実際にウ
エハ１を昇温して温度分布を計測せねばならず、非常に
多くのコストと時間がかかる。 （ｂ）あるヒータパターンを設計し使用したときに、電
流がどのように流れるのかがわからず、改良する場合ど
の部分に的を絞れば良いのかわからない。 即ち、現状のヒータの調整に関して系統的な対策を取れ
ず、前記対策を講じて確認するまでに多大なコストと時
間を有するところに大きな問題がある。以上のことを図
４に示すヒータ２４の例を基にして説明する。図４中２
５は第１の電極端子で、２６は第２の電極端子である。
これを見ると、ヒータ２４は第１および第２の電極端子
２４，２５間で並列回路になっていることがわかる。こ
の様なヒータ２４によると、そのＢ部およびＣ部の温度
が低下してしまう。Therefore, a method of dividing the heater shown in FIG. 3 into the first to third heater portions 23a, 23b and 23c has been considered, but the number of zones must be increased and the cost will increase. On the other hand, with regard to the item (b), the following problems are difficult to occur. (A) In order to determine the quality of the heater pattern, it is necessary to actually raise the temperature of the wafer 1 and measure the temperature distribution, which requires a great deal of cost and time. (B) When a certain heater pattern is designed and used, it is not known how the current flows, and when it is improved, it is not known which part should be focused. That is, there is a big problem in that systematic measures cannot be taken for the adjustment of the current heater, and that a great amount of cost and time are required until the above measures are taken and confirmed. The above will be described based on the example of the heater 24 shown in FIG. 2 in FIG.
Reference numeral 5 is a first electrode terminal, and 26 is a second electrode terminal.
From this, it can be seen that the heater 24 is a parallel circuit between the first and second electrode terminals 24 and 25. According to such a heater 24, the temperatures of the B portion and the C portion decrease.
【００１２】実験結果から、上記ヒータ２４のＢ部やＣ
部のような湾曲した部分の外側ではヒータ２４の温度
は、湾曲しない部分に比べ１００℃近く低い温度になる
ことがわかった。このヒータ２４を、ウエハ１の直下に
設置すれば、ヒータ２４の外周に相当するウエハ１やホ
ルダ２の温度が低くなることは容易に想像できる。ま
た、実験の結果もそうである。この様な場合、ヒータ２
４のＢ部、Ｃ部の発熱密度をアップしなくてはならない
が、それは非常に困難である。上記ヒータ２４のＢ部、
Ｃ部を削って薄くすることにより、この部分の抵抗値を
大きくしても、上記の部分には電流が流れず、従って温
度は全く上がらない。実験にて、この点は確認した。ヒ
ータを真空中に露出させて昇温した目視結果を、図５に
示す。このようなヒータ２４の湾曲したＢ部、Ｃ部で
は、電流は図中Ａ線に沿って流れている。また、図５中
Ａ線に沿って温度の高い領域が存在し、特にＡ線の湾曲
した内周側（図５中Ｄ部）では温度が高くなることがわ
かった。さらに、Ａ線から図５中Ｅ部では温度が低く、
電流が殆ど流れていないことが推測された。実際に、図
中Ｅ部を削り、厚さを薄くしてみても温度は上がらなか
った。即ち、Ｅ部には電流が流れていないためと思われ
る。次に、図６に、図４に示したヒータ２４を真空昇温
にしたときの温度状態を示す。図中ヒータ２４のＦ部、
Ｇ部は温度が低かった部分である。From the experimental results, the B part and C of the heater 24 are
It has been found that the temperature of the heater 24 is about 100 ° C. lower than the non-curved portion outside the curved portion such as the portion. If this heater 24 is installed directly below the wafer 1, it can be easily imagined that the temperature of the wafer 1 and the holder 2 corresponding to the outer periphery of the heater 24 becomes low. And so are the results of the experiments. In this case, heater 2
It is necessary to increase the heat generation density of the B and C parts of No. 4, but it is very difficult. Part B of the heater 24,
Even if the resistance value of this portion is increased by cutting and thinning the C portion, no current flows in the above portion, and therefore the temperature does not rise at all. This was confirmed in the experiment. FIG. 5 shows the results of visual observation in which the heater was exposed in vacuum and the temperature was raised. In the curved parts B and C of the heater 24, the current flows along the line A in the drawing. Further, it was found that there is a region having a high temperature along the line A in FIG. 5, and particularly the temperature becomes high on the curved inner peripheral side of the line A (D portion in FIG. 5). Furthermore, from the line A, the temperature is low in the part E in FIG.
It was speculated that almost no current was flowing. Actually, the temperature did not rise even if the portion E in the figure was shaved to reduce the thickness. That is, it seems that no current is flowing in the E section. Next, FIG. 6 shows a temperature state when the heater 24 shown in FIG. 4 is heated in vacuum. F part of the heater 24 in the figure,
Part G is a part where the temperature was low.
【００１３】前記ヒータ２４のＦ部で温度が低いのは、
電極２６を通して熱が逃げるためで、ヒータ２４のＧ部
での現象は明らかに前述の理由、すなわち、電流が流れ
ないためである。この様な実験結果から上記で述べた現
象が理解される。以上のように上記（イ）、（ロ）とい
った問題が存在するため、ウエハ１を均一に加熱するこ
とは非常に難しい。The low temperature at the F portion of the heater 24 is
This is because the heat escapes through the electrode 26, and the phenomenon at the G portion of the heater 24 is obviously due to the above-mentioned reason, that is, the current does not flow. From the results of such experiments, the phenomenon described above can be understood. As described above, because of the problems (a) and (b), it is extremely difficult to uniformly heat the wafer 1.
【００１４】そこで、本発明は上記問題を解決し、ウエ
ハの内周と外周の温度差を比較的容易に小さくして加熱
できるヒータを備える気相成長装置を提供することを目
的とする。Therefore, an object of the present invention is to solve the above problems and to provide a vapor phase growth apparatus equipped with a heater capable of heating by making the temperature difference between the inner periphery and the outer periphery of a wafer relatively easily.
【００１５】[0015]
【課題を解決するための手段】本発明は上記課題を解決
するため、ウエハを該ウエハに対向する円形状のヒータ
により加熱し気相反応により薄膜を堆積させる気相成長
装置において、前記ヒータは、該ヒータの外周部に互い
に接近して位置する一対の端子と、これら一対の端子の
間に接続されたヒータ線部とを備え、前記ヒータ線部は
前記端子に連らなる少なくとも一方の端部側が円形状の
ヒータの外周一部を構成するように円弧状に伸び、残部
がヒータの残部の形状を埋めるように蛇行し、かつ、蛇
行に伴う湾曲部をヒータ中心に対し異なる同心円状に配
置してなる。In order to solve the above problems, the present invention provides a vapor phase growth apparatus for heating a wafer by a circular heater facing the wafer to deposit a thin film by a vapor phase reaction. A pair of terminals located close to each other on the outer peripheral portion of the heater, and a heater wire portion connected between the pair of terminals, the heater wire portion being at least one end connected to the terminals. The part side extends in an arc shape so as to form a part of the outer circumference of the circular heater, the remaining part meanders so as to fill the shape of the remaining part of the heater, and the curved part accompanying the meandering is formed into different concentric circles with respect to the heater center. It will be arranged.
【００１６】[0016]
【作用】一対の端子を一本のヒータ線部で接続すること
により、電流の流路を把握し易すくし、また、ヒータの
外周一部を円弧状に伸ばすことにより、ヒータ外周一部
には必ず電流を流して温度上昇可能な状態にし、さら
に、ヒータの内周部と外周部とで温度のバランスを取り
易くし、また、ヒータ線部の湾曲部を異なる同心円状に
配置することにより、半径方向の温度分布をより均一に
できるようにした。By connecting a pair of terminals with one heater wire portion, it becomes easy to grasp the flow path of the current, and by extending a part of the outer circumference of the heater in an arc shape, a part of the outer circumference of the heater is connected. The temperature of the heater can always be increased by raising the temperature, and it is easier to balance the temperature between the inner and outer circumferences of the heater, and the curved portions of the heater wire are arranged in different concentric circles. The temperature distribution in the radial direction can be made more uniform.
【００１７】[0017]
【実施例】以下、本発明を図１に示す一実施例を参照し
て説明する。なお、ヒータを含む気相成長装置の構造及
び動作は、図２で示したと全く同様なので、その説明は
省略する。図１中３１は円形状をなすヒータで、このヒ
ータ３１は近接する第１および第２の電極端子３２，３
３を有している。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to an embodiment shown in FIG. Since the structure and operation of the vapor phase growth apparatus including the heater are exactly the same as those shown in FIG. 2, the description thereof will be omitted. Reference numeral 31 in FIG. 1 denotes a circular heater, and the heater 31 has first and second electrode terminals 32, 3 which are adjacent to each other.
Have three.
【００１８】上記第１の電極端子３２にはヒータ線部３
４の一端が接続され、このヒータ線部３４の中間部は蛇
行されるとともに、他端は前記第２の電極端子３３に接
続されている。A heater wire portion 3 is provided on the first electrode terminal 32.
4, one end of the heater wire portion 34 is connected, the middle portion of the heater wire portion 34 meanders, and the other end thereof is connected to the second electrode terminal 33.
【００１９】上記ヒータ線部３４の一端部側および他端
部側はヒータ３１の外周一部３４ａ，３４ｂを構成する
ように円弧状に伸びるとともに、中間部は蛇行して残部
の外周部及び内周部３４ｃを構成する。ヒータ線部３４
の占める面積はウエハ１の面積の８０％以上を占めてい
る。The one end side and the other end side of the heater wire portion 34 extend in an arc shape so as to form the outer peripheral portions 34a and 34b of the heater 31, and the intermediate portion meanders and the outer peripheral portion and the inner portion of the remaining portion. It constitutes the peripheral portion 34c. Heater wire 34
Occupies 80% or more of the area of the wafer 1.
【００２０】上記ヒータ線部３４の一端部側および他端
部側がヒータ３１の外周一部３４ａ，３４ｂを構成する
ことにより、上記ヒータ線部３４の中間部の湾曲部３４
ｄ…と、湾曲部３４ｅ…は異なる同心円状に配設される
ことになる。By forming the outer peripheral portions 34a and 34b of the heater 31 on one end side and the other end side of the heater wire portion 34, the curved portion 34 in the middle portion of the heater wire portion 34 is formed.
d and the curved portions 34e are arranged in different concentric circles.
【００２１】すなわち、上記ヒータ線部３４の中間部の
湾曲部３４ｄ…は半径Ｒ1 の同心円状に配設され、湾曲
部３４ｅ…は半径Ｒ2 （半径Ｒ1 より小さい）の同心円
状に配設されている。That is, the curved portions 34d ... In the middle of the heater wire portion 34 are arranged concentrically with a radius R 1 , and the curved portions 34e are arranged concentrically with a radius R 2 (smaller than the radius R 1 ). It is set up.
【００２２】しかして、ウエハ１を加熱する場合には、
ヒータ３１の第１および第２の電極端子３２，３３を介
してヒータ線部３４に電流が供給されて発熱し、ウエハ
１を加熱する。Therefore, when the wafer 1 is heated,
Electric current is supplied to the heater wire portion 34 via the first and second electrode terminals 32 and 33 of the heater 31 to generate heat, thereby heating the wafer 1.
【００２３】このとき、電流はヒータ線部３４の湾曲部
３４ｄ…および３４ｅ…を除いて、すなわち、ヒータ３
１の外周一部３４ａ，３４ｂおよび内周部３４ｃに良好
に流れる。At this time, the current is excluding the curved portions 34d ... And 34e ... Of the heater wire portion 34, that is, the heater 3
It flows satisfactorily to the outer peripheral portions 34a, 34b and the inner peripheral portion 34c.
【００２４】したがって、例えばヒータ３１の外周一部
３４ａ，３４ｂの温度が低かったら、該外周一部３４
ａ，３４ｂを薄く削ることにより、温度を上昇させるこ
とができる（この点に関しては、実験にて確認済みであ
る）。逆に、ヒータ３１の内周部３４ｃの温度が低けれ
ば、内周部３４ｃを削ることにより温度を上昇できる
（この点に関しては、実験にて確認済みである）。な
お、この加熱時において、ウエハ１の円周方向の温度分
布はウエハ１の回転により均一化される。上述したよう
に、一対の電極端子３２，３３を一本のヒータ線部３４
で接続するため、電流の流路が従来に比較して把握し易
すい。Therefore, for example, if the temperature of the outer peripheral portions 34a and 34b of the heater 31 is low, the outer peripheral portions 34a and 34b are low.
The temperature can be raised by thinly cutting a and 34b (this point has been confirmed by experiment). On the contrary, if the temperature of the inner peripheral portion 34c of the heater 31 is low, the temperature can be increased by cutting the inner peripheral portion 34c (this point has been confirmed by experiments). During this heating, the temperature distribution in the circumferential direction of the wafer 1 is made uniform by the rotation of the wafer 1. As described above, the pair of electrode terminals 32 and 33 are connected to one heater wire portion 34.
Since it is connected with, it is easier to understand the current flow path compared to the conventional method.
【００２５】また、ヒータ３１の内周部３４ｃおよび外
周一部３４ａ，３４ｂには、必ず電流が流れるので、湾
曲部３４ｄ…および３４ｅ…以外は、削ってヒータ３１
を薄くすれば、必ずその部分の温度を上昇させることが
できる。Since a current always flows through the inner peripheral portion 34c and the outer peripheral portions 34a, 34b of the heater 31, the heater 31 is scraped except for the curved portions 34d ... And 34e.
By thinning, the temperature of that part can be raised without fail.
【００２６】また、ヒータ３１の湾曲部３４ｄ…と、湾
曲部３４ｅ…は、異なる同心円状に配置するから、ウエ
ハ１上で温度の低い部分があれば、前記温度の低かった
部分とウエハ１の中心からの距離が同一で、かつ、実質
的に直線状になっている外周一部３４ａ、３４ｂ及び内
周部３４ｃを削ってやれば、温度は必ず上がる。なお、
外周一部３４ａ、３４ｂは必ずしも対称的な長さにする
必要はなく、全周に占める長さの割合も温度分布に基づ
いて適宜決定される。Further, since the curved portions 34d ... And the curved portions 34e ... Of the heater 31 are arranged in different concentric circles, if there is a low temperature portion on the wafer 1, the low temperature portion and the wafer 1 are If the outer peripheral portions 34a and 34b and the inner peripheral portion 34c, which have the same distance from the center and are substantially linear, are removed, the temperature always rises. In addition,
The outer peripheral portions 34a and 34b do not necessarily have to have symmetrical lengths, and the ratio of the length occupying the entire circumference is appropriately determined based on the temperature distribution.
【００２７】[0027]
【発明の効果】以上説明したように、本発明によれば、
電流の流路が従来に比較して把握し易すいととももに、
ヒータの内周部と外周部に必ず電流が流れ、湾曲した部
分以外は、削ってヒータを薄くすれば、必ずその部分の
温度を上昇でき、また、ヒータの内周部と外周部で温度
のバランスが取り易く、さらに、ヒータの温度を上昇さ
せる部位を容易に判別し易い。As described above, according to the present invention,
It is easy to grasp the current flow path compared to the conventional one,
Electric current always flows in the inner and outer peripheral parts of the heater, and if the heater is thinned by cutting the part other than the curved part, the temperature of the part can always be raised. It is easy to achieve balance, and it is easy to easily determine the part where the temperature of the heater is raised.
【００２８】したがって、従来どのように調整しても１
０℃程度あったウエハ内の最大温度差を本発明を用いた
ヒータを調整することにより、わずか数時間のオーダで
１０℃から３℃まで小さくすることができるという効果
を奏する。Therefore, no matter how the conventional adjustment is made, it is 1
By adjusting the maximum temperature difference within the wafer, which is about 0 ° C., by the heater using the present invention, it is possible to reduce the maximum temperature difference from 10 ° C. to 3 ° C. in a few hours.
【図１】本発明の一実施例であるヒータ装置を示す平面
図。FIG. 1 is a plan view showing a heater device which is an embodiment of the present invention.
【図２】図１のヒータ装置を備える気相成長装置を示す
構成図。2 is a configuration diagram showing a vapor phase growth apparatus including the heater device of FIG.
【図３】従来のヒータを示す断面図。FIG. 3 is a sectional view showing a conventional heater.
【図４】従来のヒータを示す平面図。FIG. 4 is a plan view showing a conventional heater.
【図５】図４のヒータ装置の湾曲部の電流密度を示す
図。5 is a diagram showing a current density in a curved portion of the heater device in FIG.
【図６】従来のヒータを真空昇温したときの温度変化を
示す図。FIG. 6 is a diagram showing a temperature change when a conventional heater is heated in vacuum.
１…ウエハ、３１…ヒータ、３２，３３…一対の端子、
３４…ヒータ線部、３４ａ，３４ｂ…外周部、３４ｃ…
内周部、３４ｄ…，３４ｅ…湾曲部。1 ... Wafer, 31 ... Heater, 32, 33 ... Pair of terminals,
34 ... Heater wire portions, 34a, 34b ... Outer peripheral portion, 34c ...
Inner peripheral portion, 34d ..., 34e ... Curved portion.
Claims (2)
ータにより加熱し気相反応により薄膜を堆積させる気相
成長装置において、 前記ヒータは、該ヒータの外周部に互いに接近して位置
する一対の端子と、 これら一対の端子の間に接続されたヒータ線部と、を備
え、 前記ヒータ線部は前記端子に連らなる少なくとも一方の
端部側が円形状のヒータの外周一部を構成するように円
弧状に伸び、残部がヒータの残部の形状を埋めるように
蛇行し、かつ、蛇行に伴う湾曲部をヒータ中心に対し異
なる同心円状に配置したことを特徴とする気相成長装
置。1. A vapor phase growth apparatus for heating a wafer by a circular heater facing the wafer to deposit a thin film by a vapor phase reaction, wherein the heaters are located close to each other on an outer peripheral portion of the heater. And a heater wire portion connected between the pair of terminals, and at least one end side of the heater wire portion connected to the terminal constitutes a part of the outer circumference of a circular heater. Thus, the vapor phase growth apparatus is characterized in that it extends in an arc shape, the remaining portion meanders so as to fill the shape of the remaining portion of the heater, and the curved portion associated with the meandering is arranged in different concentric circles with respect to the center of the heater.
の８０％以上を占める請求項１記載の気相成長装置。2. The vapor phase growth apparatus according to claim 1, wherein the area occupied by the heater wire portion occupies 80% or more of the area of the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05360493A JP3233482B2 (en) | 1993-03-15 | 1993-03-15 | Vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05360493A JP3233482B2 (en) | 1993-03-15 | 1993-03-15 | Vapor phase growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06267864A true JPH06267864A (en) | 1994-09-22 |
| JP3233482B2 JP3233482B2 (en) | 2001-11-26 |
Family
ID=12947495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP05360493A Expired - Lifetime JP3233482B2 (en) | 1993-03-15 | 1993-03-15 | Vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3233482B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007099957A1 (en) * | 2006-02-28 | 2007-09-07 | Tokyo Electron Limited | Plasma treatment apparatus, and substrate heating mechanism to be used in the apparatus |
| JP2009081185A (en) * | 2007-09-25 | 2009-04-16 | Nuflare Technology Inc | Vapor growth apparatus and vapor growth method |
| CN110034048A (en) * | 2015-03-09 | 2019-07-19 | 纽富来科技股份有限公司 | Heater and used its semiconductor device manufacturing device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0227715A (en) * | 1988-07-15 | 1990-01-30 | Mitsubishi Electric Corp | Heating stage for vapor growth device |
| JPH02122597U (en) * | 1989-03-15 | 1990-10-08 | ||
| JPH0380530A (en) * | 1989-05-26 | 1991-04-05 | Toshiba Corp | Heater and vapor growing apparatus using the same |
-
1993
- 1993-03-15 JP JP05360493A patent/JP3233482B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0227715A (en) * | 1988-07-15 | 1990-01-30 | Mitsubishi Electric Corp | Heating stage for vapor growth device |
| JPH02122597U (en) * | 1989-03-15 | 1990-10-08 | ||
| JPH0380530A (en) * | 1989-05-26 | 1991-04-05 | Toshiba Corp | Heater and vapor growing apparatus using the same |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007099957A1 (en) * | 2006-02-28 | 2007-09-07 | Tokyo Electron Limited | Plasma treatment apparatus, and substrate heating mechanism to be used in the apparatus |
| JP2009081185A (en) * | 2007-09-25 | 2009-04-16 | Nuflare Technology Inc | Vapor growth apparatus and vapor growth method |
| CN110034048A (en) * | 2015-03-09 | 2019-07-19 | 纽富来科技股份有限公司 | Heater and used its semiconductor device manufacturing device |
| CN110034048B (en) * | 2015-03-09 | 2023-05-26 | 纽富来科技股份有限公司 | Heater and apparatus for manufacturing semiconductor device using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3233482B2 (en) | 2001-11-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR0160510B1 (en) | Multi-zone flat heater assembly and its driving method | |
| TWI406323B (en) | Multi-zone resistive heater | |
| US5344492A (en) | Vapor growth apparatus for semiconductor devices | |
| JP3856293B2 (en) | Heating device | |
| US20220106687A1 (en) | Cvd reactor having means for locally influencing the susceptor temperature | |
| US5209182A (en) | Chemical vapor deposition apparatus for forming thin film | |
| JPH06177056A (en) | Gas treatment equipment | |
| JPH10208855A (en) | Surface heater | |
| JPH06267864A (en) | Vapor growth device | |
| US5225245A (en) | Chemical vapor deposition method for forming thin film | |
| JPH06151322A (en) | Heating device for thin-film manufacturing apparatus | |
| JP7581608B2 (en) | Apparatus and method for providing wafer planarity during growth - Patents.com | |
| KR20030018290A (en) | Heater assembly for heating a wafer | |
| JP3267371B2 (en) | Wafer heating method and apparatus | |
| JP3922018B2 (en) | Vapor growth apparatus and temperature detection method for vapor growth apparatus | |
| US5685905A (en) | Method of manufacturing a single crystal thin film | |
| JP2004342450A (en) | High frequency induction heating device and semiconductor manufacturing device | |
| JP3514254B2 (en) | Heat treatment apparatus and method for manufacturing silicon epitaxial wafer | |
| JP2001006853A (en) | Disc-like heater for vertical type heating furnace | |
| JPH11354528A (en) | Heater for heating wafer | |
| JP2939822B2 (en) | Vacuum heater | |
| JPH0735382Y2 (en) | Thin film vapor deposition equipment | |
| JP2864466B2 (en) | Diamond production equipment | |
| JPH06158287A (en) | Resistance heating vapor deposition device | |
| JPH03252127A (en) | Temperature control method for vapor growth device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080921 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090921 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090921 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100921 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100921 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110921 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110921 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120921 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130921 Year of fee payment: 12 |