JPH06230351A - Liquid crystal display device - Google Patents

Abstract

PURPOSE:To enhance the strength to an environmental change and to improve image quality, reliability and durability by providing a region where the volumetric change of a flowable material reinforcing a thin-film layer by a change in temp., atm. pressure, etc., outside an image display part. CONSTITUTION:An Si substrate 1 is hollowed out by etching of a region 20 where the volumetric change of a potting material is absorbed, a passage connecting an aperture 2 and the region 20 where the volumetric change of the potting material is absorbed and a passage connecting the aperture 2 and a potting material injection port 25, simultaneously with etching of the aperture 2. An adhesive (frame material 4) is then applied on the Si substrate 1 around the region 20 where the volumetric change of the potting material is absorbed. A film, such as rubber film 21, having elasticity to absorb the volumetric change of the potting material by temp., atm. pressure, etc., is then placed thereon and the frame material 4 is similarly formed around the aperture 2 and a part of the rubber film 21. A glass substrate 5 is placed thereon. Since the structure to absorb the volumetric change of the potting material by the deformation of the rubber film 21 is adopted, the the structure strong to the environmental change is obtd.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image display device using liquid crystal and a manufacturing method thereof.

[0002]

2. Description of the Related Art Conventionally, an image display device is a CRT (Cath).
od Ray Tube) has been widely used, but in recent years, a liquid crystal display device which can be made thinner and lighter has been attracting attention as an image display device replacing a CRT.

The inventors of the present invention, as the invention of the prior application, bond two semiconductor substrates with each other through an insulator layer, and thin one of the substrates so that a single crystal Si semiconductor layer is formed on the insulator. A silicon-on-insulator (SOI) type substrate structure is formed, and a liquid crystal image display in which light can be transmitted to the liquid crystal pixel portion by removing the portion below the liquid crystal pixel portion in the non-light transmissive substrate. Proposing a device.
This achieves the purpose of obtaining a good quality single crystal layer on the light transmissive substrate.

[0004]

However, in the above-mentioned conventional liquid crystal display device, the gap in the liquid crystal layer, the driving transistor, etc. are deformed due to the influence of environmental changes such as temperature and pressure, and the image quality is deteriorated and the reliability is improved. It caused a decrease in sex.

Further, in the technique according to the invention of the above-mentioned prior application, the "membrane (Membrane)" on the upper side of the cut-out surface portion is used.
Part, that is, a thin layer (single crystal Si layer or single crystal S layer) in which an electronic device on the surface of the light-transmitting region is incorporated.
The i layer and the insulating layer) have a thickness of several μm or less, and it is necessary to increase the strength. This becomes necessary especially as the cut-out area increases.

[0006]

That is, according to the present invention, in a liquid crystal display device having a liquid crystal material on one side between two substrates sandwiching a thin film layer provided with a liquid crystal driving element, the other thin film layer and the substrate are provided. Image a region that reinforces the thin film layer on which the liquid crystal driving element is provided by filling a fluid material in between, and absorbs volume change due to changes in temperature, pressure, etc. of the fluid material that reinforces the thin film layer. By installing it outside the display, it is resistant to environmental changes.

Further, by providing a passage connecting the image display area and the outside air, the volume change due to the change of temperature, atmospheric pressure and the like of the fluid material for reinforcing the thin film layer is released to the outside of the liquid crystal display device. It is resistant to change.

[0008]

【Example】

(First Embodiment) FIG. 1A is a plan view of the schematic view of a liquid crystal display device according to the present invention, and FIG. 1B is a sectional view taken along line AA '. The drawings and the examples will be described below.

The liquid crystal display device according to the present invention comprises an image display liquid crystal cell portion and a potting cell portion for injecting a potting material to reinforce the liquid crystal cell portion. The liquid crystal cell portion is composed of the transparent substrate 51, the liquid crystal driving element layer 60, and the liquid crystal 50 injected into the portion surrounded by the frame member 52. The transparent substrate 51 is provided with a light-shielding layer for shielding light between the color filters, a transparent electrode for applying a voltage to the liquid crystal, and an alignment film for aligning the liquid crystal in a certain direction. The liquid crystal driving element layer 60 includes a pixel electrode in the pixel portion, a thin film transistor (TFT) for applying a signal to the electrode, a signal line for transmitting a signal to the TFT, a driving line for driving the TFT, and horizontal and vertical driving the pixel TFT. It consists of a shift register.

The liquid crystal driving element layer 60 is formed on the Si substrate manufactured by the method shown in FIG. The Si substrate is a Si single crystal substrate which is highly economical and has an extremely excellent crystallinity which is uniform and flat over a large area, and a semiconductor active element is formed on a Si single crystal layer having extremely few defects. Therefore, the stray capacitance of the semiconductor element is reduced,
It is possible to provide a high-performance liquid crystal display device in which elements and circuits which can operate at high speed and have excellent radiation resistance without latch-up phenomenon are integrated on the same substrate as liquid crystal image display pixels.

An example of a method of manufacturing a Si substrate will be described below with reference to FIG.

As shown in FIG. 18A, a P-type (100) single crystal Si substrate having a thickness of 300 μm is anodized in an HF solution to form a porous Si substrate.

The anodizing conditions were as follows.

Applied voltage: 2.6 (V) Current density: 30 (mA · cm ^-2 ) Anodizing solution: HF: H ₂ O: C ₂ H ₅ OH = 1:
1: 1 time: 2.4 (hour) Porous Si thickness: 300 (μm) Porosity: 56 (%) P-type (100) porous Si substrate 101 thus obtained
The Si epitaxial layer 102 is formed on the upper surface by low pressure CVD.
Are grown with a layer thickness of 1.0 micron. The deposition conditions are as follows.

Source gas: SiH ₄ carrier gas: H ₂ Temperature: 850 ° C. Pressure: 1 × 10 ^-2 Torr Growth rate: 3.3 nm / sec Next, an oxide layer 103 of 1000 Å is formed on the surface of the epitaxial layer 102. As shown in FIG. 18B, another oxide Si substrate 107 having a 5000 angstrom oxide layer 104 and a 1000 angstrom nitride layer 105 formed on the oxidized surface is superposed on the oxidized surface, and the surface is placed in a nitrogen atmosphere. The two Si substrates are firmly bonded together by heating at 800 ° C. for 0.5 hours.

Thereafter, the bonded substrates are mixed with a mixed solution of 49% hydrofluoric acid, alcohol, and 30% hydrogen peroxide solution (10:
Selective etching was carried out in a 6:50) without stirring.
After 65 minutes, as shown in FIG. 18 (c), non-porous Si
Only the layer remained without being etched, and the porous Si substrate 101 was selectively etched and completely removed using the single crystal Si as an etching stop material.

The etching rate of the non-porous Si single crystal with respect to the etching solution is extremely low, the etching layer is 50 angstroms or less even after 65 minutes, and the selectivity with respect to the etching rate of the porous layer is not more than 10 <5>. The amount of etching in the non-porous layer (tens of angstroms) is practically negligible. In this way, porous Si having a thickness of 200 microns is obtained.
Substrate 101 was removed and 1.0 μ on SiO ₂ 103
A single crystal Si layer 102 having a thickness of m can be formed. When SiH ₂ Cl is used as the source gas, it is necessary to raise the growth temperature by several tens of degrees, but the enhanced etching characteristic peculiar to the porous substrate is maintained.

A TFT is formed on the single crystal silicon thin film 102 to form a liquid crystal driving element layer 60. Since the liquid crystal driving element layer 60 is formed on the Si substrate 1, it is opaque to visible light. Therefore, next, the opening 2 is hollowed by etching in order to allow visible light to pass therethrough. As an etching solution, tetramethylammonium hydride (TMA
H) An aqueous solution was used. Etching conditions are TMAH22
% Aqueous solution, 90 ° C., 10 hours. The Si substrate 1
As a structure in which a thin insulating layer is present on a Si substrate and a single crystal Si layer is overlaid on the thin insulating layer (Silicon O
When a Si substrate having an n Insulator structure, SOI) is used, the insulating layer 3 serves as an etching stop layer, which is effective and desirable for uniform etching. Here, the etching solution is not particularly limited as long as it has a sufficient selection ratio of Si such as KOH and SiO ₂ .

Next, a method of forming the potting cell portion will be described. The process can be roughly divided into three processes of a potting material filling region creating process, a potting material injecting process, and an injection port sealing process. Hereinafter, description will be made in this order.

Simultaneously with the etching of the opening 2 of the Si substrate 1, the potting material volume change absorbing region 20, the passage connecting the opening 2 and the potting material volume change absorbing region 20,
A passage connecting the opening 2 and the potting material injection port 25 is hollowed by etching. Next, an adhesive (frame member 4) is applied on the Si substrate 1 around the potting material volume change absorbing region 20. As the frame material 4, an epoxy resin (Structbond EH454NF, manufactured by Mitsui Toatsu Chemicals, Inc.) was used. The frame material 4 made of an adhesive may be formed by either a method of discharging the injection needle tip with a dispenser to trace a pattern or a method of squeegee printing. A rubber film 21 or the like, which has elasticity to absorb a volume change of the potting material due to temperature, atmospheric pressure, or the like, is placed thereon, and then the frame member 4 is provided around the opening 2 and a part of the rubber film 21. Was similarly formed, the glass substrate 5 was placed thereon, and pressure was applied to form a desired gap, followed by baking in an oven at 80 ° C. for 2 hours to form a potting material filled region.

Here, it is preferable that the glass substrate 5 is made of a material having a coefficient of thermal expansion close to that of the Si substrate 1 because it is effective in suppressing warpage of the liquid crystal display device. In this embodiment, as the glass substrate 5, AL glass manufactured by Asahi Glass Co., Ltd. (coefficient of thermal expansion 36 × 10 ⁻⁷ ; Si is 32 × 10), which has a thermal expansion coefficient relatively close to that of Si.
^-7 ) was used. The gap was suppressed by sandwiching a gap material (glass, injection needle, etc.) having a desired thickness between the glass substrate 5 and the Si substrate 1. When a very narrow gap (about 10 μm) is needed, φ1 in the epoxy resin
The beads of about 0 μm (Sekisui Fine Chemical Co., Ltd., Micropearl SP) are mixed to form the frame material 4,
The desired gap thickness was set.

Next, the injection process for filling the potting cell formed as described above with the potting material will be described. The potting material should be vacuum degassed (10 ^-3 before injection).
Torr, 12 hours) was performed to make it free from bubbles. The liquid crystal display device (liquid crystal cell) in which the frame has been formed and the potting material placed in a petri dish are set in a vacuum device, and vacuumed to a degree of vacuum of about 10 ⁻³ Torr. Evacuation time is 1-2 after reaching 10 ^-3 Torr
It took 4 hours. Then, in a vacuum state, the liquid crystal cell is inserted into a petri dish containing a potting material and immersed in the potting material. After the equilibrium state of the injection due to the capillary phenomenon was reached, the vacuum device was slowly leaked over 20 minutes to 1 hour to sufficiently inject the potting material into the frame.

The potting material is 10 ^-3 Tor as described above.
It is injected in a vacuum of about r. Therefore, the vapor pressure is low,
Moreover, it must be a transparent liquid that does not solidify or vaporize in the temperature range of -20 ° C to 80 ° C. Specifically, liquid crystal, polyethylene glycol (Kanto Chemical Co., Inc., polyethylene glycol # 200), and silicone oil (Shin-Etsu Chemical Co., Ltd., Shin-Etsu Silicone) were used.

The sealing is performed as follows. The liquid crystal cell is taken out from the vacuum apparatus, and the inlet 25 is thoroughly wiped with acetone or the like to degrease. The potting material injection port 25 was filled with the sealing material 22, and the sealing was performed. Liquid crystal as the potting material, epoxy resin when polyethylene glycol was used (Structbond ES280, Mitsui Toatsu Chemicals Inc.),
Alternatively, when a UV curable resin was used as a potting material for silicone oil, a silicone bond (Shin-Etsu Silicone Co., Ltd., Shin-Etsu Silicone) was used as a sealing material.
Curing was done at room temperature for 12 hours when using an epoxy resin. In the case of silicone resin, it was carried out at 80 ° C. for 2 hours. On the other hand, since the sealing time of the ultraviolet curable resin is about 1 minute by applying ultraviolet rays, the sealing can be performed firmly in a short time, which is very effective.

In the liquid crystal display device according to the present invention, the opening 2 is formed by the liquid crystal driving element built in the liquid crystal driving element layer 60.
The liquid crystal 50 is driven to display at the opening 2. The distance between the glass substrate 51 and the liquid crystal driving element layer 60 (hereinafter referred to as the cell gap) defined by the frame member 52 affects the light transmittance, and therefore the opening 2 is required to perform uniform display on the entire surface. It is desired that the cell gap be uniform over the entire surface. In this embodiment, the liquid crystal driving element layer 6
The thickness of 0 is very thin, 1/1000 or less with respect to the opening, so that deformation is likely to occur and further cracking is likely to occur. Therefore, the structure for reinforcing by potting as shown in the present invention is very effective not only for improving durability and reliability but also for improving image quality in the present liquid crystal display device.

Further, since the liquid crystal display device according to the present invention has a structure in which the volume change of the potting material due to the temperature or the atmospheric pressure is absorbed by the deformation of the rubber film 21, it is resistant to the environmental change.

(Second Embodiment) A plan view of a second embodiment of the present invention is shown in FIG. 2, a sectional view taken along the line AA 'is shown in FIG.
A B ′ cross-sectional view is shown in FIG. The feature of the present embodiment is that the depth of the hollow by etching the potting material volume change absorbing region 23, the passage connecting the opening 2 and the potting material volume change absorbing region 20, and the passage connecting the opening 2 and the potting material injection port 25. This is the point where the depth of the hollowing is smaller than that of the opening 2.

The forming method will be described below. Opening 2
When hollowing out, the area other than the opening 2 where the hollowing is shallow is masked with a material having a masking effect on TMAH such as Teflon tape or silicone resin.
After etching the opening 2 to a desired depth, the masking is removed and further etching is performed. When the etching of the opening 2 reaches the insulating layer 3, the etching is finished.
In this way, the above structure can be realized.

(Third Embodiment) FIG. 4 shows a third embodiment of the present invention. The feature of this embodiment is that a plurality of potting material volume change absorbing regions 20 are formed. The depth of the hollow of the potting material volume change absorbing region 20 is equal to the depth of the hollow of the opening 2. Further, as a development of this embodiment, a structure in which at least a part of the plurality of potting material volume change absorbing regions 20 is shallower than the depth of the hollow of the opening 2 is also possible.

(Fourth Embodiment) FIG. 5 shows a fourth embodiment of the present invention. The feature of this embodiment is that a plurality of potting material volume change absorbing regions 23 having a smaller depth of hollowing than the opening 2 are formed. Potting material volume change absorbing area 23
It is also possible that the depths of the hollows are all equal, or at least some of them differ from others.

(Fifth Embodiment) FIG. 6A shows a fifth embodiment of the present invention.
A plan view of the embodiment, and FIG. 6B is a sectional view taken along the line AA '. The feature of this embodiment is that a potting material volume change absorption region 26 in which a gas is enclosed is provided. The enclosed gas can be the whole or a part of the potting material volume change absorbing region 26. The method for forming the potting cell and the method for enclosing the gas will be described below.

After hollowing out into a desired pattern by etching, a frame material 4 is applied around the hollowed portion, and a glass plate 5 is placed thereon to form a potting cell. After injecting the potting material by the above-mentioned vacuum injecting method, the potting material is heated to about 100 ° C. in a desired gas atmosphere and kept for about 1 hour. After that, the temperature is gradually cooled to room temperature, and the potting material injection port 25 is sealed with the sealing material 22. In addition, it is also possible to inject the potting material, then evacuate it again to discharge a desired amount of the potting material from the inside of the cell, then leak with a desired gas and return to normal pressure for sealing.

(Sixth Embodiment) FIG. 7A shows a sixth embodiment of the present invention.
FIG. 7B is a plan view of the embodiment, and FIG. 7B is a sectional view taken along the line AA '. The feature of this embodiment is that the potting material inlet 25 is not sealed, the distance of the passage 27 from the potting material inlet 25 to the opening 2 is increased, and the cross-sectional area of the passage 27 is reduced. The length l and the cross-sectional area S of the passage 27 are defined as follows. First, the cross-sectional area S is set to 1 mm ² or less. When the distance from the potting material inlet 25 to the potting material liquid surface 28 which potting material is filled to the _{l 1, S × l 1>} V P (80 ℃) -V P (Room) S × (l- l ₁ )> V _P (Room) −V _P (−20)
Therefore, l ₁ > (V _P (80 ° C.) − V _P (Room)) / S l> ((V _P (Room) −V _P (−20 ° C.)) / S)
+ L ₁ where V _P (Room) is the volume of the potting material injected into the cell at room temperature, V _P (80 ° C.) is the volume at 80 ° C., and V _P (−20 ° C.) is the same −20. Volume in ° C. By using this structure, when the volume of the potting material changes due to the environmental change, the potting material liquid level 28 is changed to the passage 2
It is absorbed by moving back and forth inside 7.

(Seventh Embodiment) FIG. 8 shows a seventh embodiment of the present invention. A feature of this embodiment is that a rubber bag 9 for absorbing a change in potting material volume is provided at one end of the needle 7. The method for forming the potting cell of this embodiment will be described below.

After the opening 2 is hollowed out by etching, the frame member 4 is formed, the needles 7 are installed so as to form the inner and outer passages of the frame member 4, and the glass plate 5 is placed to form a potting cell. A plurality of spacers 8 were installed to make the gap between the glass plate 5 and the Si substrate 1 uniform. The potting material is injected up to the outer end of the cell of the needle 7, and the rubber bag 9 completely filled with the potting material is attached to the end of the needle 7. The mounting portion is sealed with an epoxy-based room temperature curing resin 10 and kept at room temperature for 12 hours or more to be cured.

By using this structure, reinforcement by potting of the image display portion and strength against environmental changes are realized. Further, a plurality of potting material volume change absorbing regions composed of the needle 7, the rubber bag 9 and the sealing material 10 can be formed.

(Eighth Embodiment) FIG. 9 shows an eighth embodiment of the present invention. The feature of this embodiment is that a flexible tube 11 made of vinyl chloride or the like is provided. A method for forming the potting cell of this embodiment will be described.

Frame member 4, glass plate 5, needle 7, spacer 8
Then, the tube 11 is attached to the outer end of the cell of the needle 7, and the attachment is sealed with the sealing material 10.
After that, a potting material is injected from the other port of the tube 11 by vacuum injection, and the injection port is fusion-sealed with a soldering iron or the like in a state where the tube 11 is compressed and the inner volume of the tube 11 is reduced. Here, the inner volume V of the tube and the deformed volume V ₁ of the tube are defined as follows.

V−V ₁ > V _P (Room) −V _P (−20 ° C.) V ₁ > V _P (80 ° C.) − V _P (Room) where V _P (Room) is the room temperature in the potting cell. The total volume of the potting material in the above, V _P (−20 ° C.) is the volume at −20 ° C., and V _P (80 ° C.) is the volume at 80 ° C. It is also possible to form a plurality of potting material volume change absorbing regions composed of the needle 7, the tube 11 and the sealing material 10.

(Ninth Embodiment) FIG. 10 shows a ninth embodiment of the present invention. The feature of this embodiment is that a part of gas is enclosed in the container 12. The volume V _GAS of the enclosed gas is defined as follows.

V _GAS > V _P (80 ° C.) − V _P (Room) where V _P (Room) is the total volume of the potting material in the potting cell at room temperature, and V _P (80 ° C.) is the same at 80 ° C. Is the volume of. The diameter of the needle 7 is 0.5 mm or less. It is also possible to form a plurality of potting material volume change absorbing regions composed of the needle 7, the container 12 and the sealing material 10.

(Tenth Embodiment) FIG. 11 shows a tenth embodiment of the present invention.
This is an example. The feature of this embodiment is that the needle 7 that does not close the mouth is provided. The diameter d of the needle 7 and the length 1 of the needle 7 are defined as follows.

D is 0.5 mm or less. The distance from one end of the needle 7 in the potting cell to the potting material liquid surface 16 is set to l ₁ , and the potting material liquid surface 16 to the needle 7
Let l ₂ be the distance to the other end of d. L ₁ > V _P (Room) −V _P (−20 ° C.) d · l ₂ > V _P (80 ° C.) − V _P (Room) l = L ₁ + l ₂ where V _P (Room) is the total volume of the potting material in the cell at room temperature at room temperature, V _P (80 ° C.) is the volume at 80 ° C., and V _P (−20 ° C.) is the same. Volume at 20 ° C. The potting material liquid level 16 is set by filling the potting material up to the end of the needle 7 outside the cell, holding the cell at 80 ° C. or higher for 1 hour, and then gradually cooling. Alternatively, similarly, there is a method in which the potting material is filled up to the end of the needle 7 and then a vacuum is drawn to eject a desired potting material outside the cell. It is possible to set a plurality of needles 7, and when the number is n, the length of each needle 7 is 1 / n of l.

(Eleventh Embodiment) FIG. 12 shows the eleventh embodiment of the present invention.
This is an example. The feature of the present embodiment is that a film 13 such as a GORE-TEX is provided, which allows gas to pass therethrough but does not allow liquid to pass therethrough. The length of the needle 7 is the length defined in the tenth embodiment. Membrane 13
Is injected with a potting material, and after setting a desired potting material liquid surface 16, it is mounted and sealed with the sealing material 10. It is also possible to form a plurality of potting material volume change absorbing regions composed of the needle 7, the film 13 and the sealing material 10.

(Twelfth Embodiment) FIG. 13 shows a twelfth embodiment of the present invention.
This is an example. The feature of this embodiment is that a padding 14 such as a sponge is provided in the needle 7. The length of the needle 7 is the length defined in the tenth embodiment. It is also possible to form a plurality of potting material volume change absorbing regions composed of the needle 7, the padding 14 and the sealing material 10.

(Thirteenth Embodiment) FIG. 14 shows the thirteenth embodiment of the present invention.
This is an example. The feature of this embodiment is that a bubble reservoir area 17 is formed which is isolated by the opening 2 and the frame member 4 and is connected by the needle 15. The diameter of the needle 15 is smaller than that of the needle 7. By providing the bubble storage area 17, it is possible to prevent bubbles from entering the opening 2 even when bubbles enter from the needle 7. It is also possible to provide a plurality of portions including the needle 15, the needle 7, and the bubble trap region 17 around the opening 2.

(Fourteenth Embodiment) FIG. 15A is a plan view of a fourteenth embodiment of the present invention, and FIG. 15B is a sectional view taken along the line AA '. The feature of this embodiment is that the frame member 4 forms the passage 18 of the potting material.

The frame material 4 is formed in a desired pattern, and the glass plate 5 is placed thereon to form a potting cell. A spacer 8 is provided to make the gap between the glass plate 5 and the Si substrate 1 uniform.
Set up. The diameter of the spacer 8 is 0.5 mm or less. The length l ₅ of the passage 18 from the opening 2 to the potting material inlet 25 is defined as follows.

The width of the passage 18 is W, the height is h (equal to the diameter of the spacer 8), the length of the passage 18 from the potting material inlet 25 to the potting material liquid surface 16 is l _6, and potting is performed. Passage 1 from liquid surface 16 to opening 2
When the length of the 8 was _{l 7, l 6 · W ·} h> V P (80 ℃) -V P (Room) l 7 · W · h> V P (Room) -V P (-20 ℃) therefore _{l 6> (V P (80} ℃) -V P (Room)) / W · h l 7> (V P (Room) -V P (-20 ℃)) / W ·
h l ₅ = l ₆ + l ₇ . Further, the passage 18 may be provided with a plurality of passages independent of each other. When a total of n passages are formed, the length of each passage is 1 / n of l ₅ .

(Fifteenth Embodiment) FIG. 16 shows the fifteenth embodiment of the present invention.
This is an example. The feature of this embodiment is that a filling material 14 such as a sponge is provided in the passage 18 inside the potting material inlet 25. The length and height of the passage 18 are the same as those defined in the fourteenth embodiment. It is also possible to form a plurality of passages 18 and paddings 14 independent of each other.

(Sixteenth Embodiment) FIG. 17 shows a sixteenth embodiment of the present invention.
This is an example. The feature of this embodiment is that the frame material 4 forms a potting material volume change absorbing region, and gas is enclosed therein.

A potting material injection port 2
After injection from 5, the cell was heated to 90 ° C in a desired gas atmosphere.
Hold at the above temperature for 1 hour and then cool slowly, or after vacuuming the cell and ejecting the desired volume potting material, leaking with the desired gas and returning to normal pressure. After introducing gas into the region 19, the inlet 2
5 is sealed with a sealing material 22 to form a potting cell. It is also possible to form a plurality of potting material volume change absorbing regions, which are composed of the passages 18 and the gas sealing regions 19, independent of each other.

[0053]

As described above, in a liquid crystal display device having a liquid crystal material on one side between two substrates sandwiching a thin film layer provided with a liquid crystal driving element, 1. Filled with a fluid material 2, an area for absorbing a volume change due to a change in temperature, atmospheric pressure, etc. of the fluid material 3, and a passage connecting the image display area and the outside air for durability and reliability. The liquid crystal display device which is effective not only in improving the image quality but also in improving the image quality can be realized.

[Brief description of drawings]

FIG. 1 is the schematic diagram of the first embodiment of the present invention.

FIG. 2 is a plan view of a second embodiment of the present invention.

3 is a cross-sectional view of FIG.

FIG. 4 is a plan view of a third embodiment of the present invention.

FIG. 5 is a plan view of a fourth embodiment of the present invention.

FIG. 6 is a schematic view of a fifth embodiment of the present invention.

FIG. 7 is a schematic view of a sixth embodiment of the present invention.

FIG. 8 is a plan view of a seventh embodiment of the present invention.

FIG. 9 is a plan view of an eighth embodiment of the present invention.

FIG. 10 is a plan view of a ninth embodiment of the present invention.

FIG. 11 is a plan view of a tenth embodiment of the present invention.

FIG. 12 is a plan view of an eleventh embodiment of the present invention.

FIG. 13 is a plan view of a twelfth embodiment of the present invention.

FIG. 14 is a plan view of a thirteenth embodiment of the present invention.

FIG. 15 is a schematic view of a fourteenth embodiment of the present invention.

FIG. 16 is a plan view of a fifteenth embodiment of the present invention.

FIG. 17 is a plan view of a sixteenth embodiment of the present invention.

FIG. 18 is a diagram showing a method for manufacturing a Si substrate.

[Explanation of symbols]

 1 Si substrate 2 Opening 3 Insulating layer 4 Frame material 5 Glass plate 6 Potting material 7 Needle 8 Spacer 9 Rubber film 10 Sealing material 11 Tube 12 Container 13 Membrane 14 Filling 15 Needle 16 Potting material Liquid level 17 Bubble trap area 18 passage 19 gas sealing area 20 potting material volume change absorbing area 21 rubber film 22 sealing material 23 potting material volume change absorbing area 25 potting material injection port 26 gas sealing area 27 passage 28 potting material liquid level 50 liquid crystal 51 glass substrate 52 frame Material 60 Liquid crystal drive element layer

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hiroshi Genji 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc.

Claims (3)

[Claims] 1. A thin film layer provided with a liquid crystal driving element is sandwiched 2
A liquid crystal display device comprising a liquid crystal material on one side of a substrate and a fluid material on the other side, wherein the liquid crystal display device has a region for absorbing a volume change of the fluid material. 2. A region for absorbing a volume change of a fluid material,
The liquid crystal display device according to claim 1, wherein the same fluid material as the fluid material is filled. 3. A liquid crystal display device according to claim 1, wherein gas is sealed in at least a part of a region for absorbing a volume change of the fluid material.