JPH06222388A - Production of thin film transistor matrix - Google Patents
Production of thin film transistor matrixInfo
- Publication number
- JPH06222388A JPH06222388A JP1206593A JP1206593A JPH06222388A JP H06222388 A JPH06222388 A JP H06222388A JP 1206593 A JP1206593 A JP 1206593A JP 1206593 A JP1206593 A JP 1206593A JP H06222388 A JPH06222388 A JP H06222388A
- Authority
- JP
- Japan
- Prior art keywords
- film
- glass substrate
- transparent insulating
- protective film
- soda lime
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
(57)【要約】
【目的】 本発明は，ＴＦＴマトリクス方式ＬＣＤ用の
基板に関し，安価で且つ液晶中に不純物が混入してＴＦ
Ｔ特性を劣化しないような基板を得ることを目的とす
る。
【構成】 ＴＦＴマトリックス方式ＬＣＤ用のガラス基
板に、ガラス基板表面の片面、或いは両面に透明絶縁性
保護膜２を被覆したソーダライムガラス基板１を用いる
ように、透明絶縁性保護膜２をＡＬＤ法により形成する
ように、透明絶縁性保護膜２をＡＬＤ法によりソーダラ
イムガラス基板１の両面に同時に形成するように、更
に、透明絶縁性保護膜２を被覆したソーダライムガラス
基板１上にゲート電極３を形成した後、ゲート絶縁膜４
としてＡＬＤ法により透明絶縁膜を形成し、且つ、最終
保護膜12にもＡＬＤ法による透明絶縁膜を形成するよう
に構成する。
(57) [Summary] [Object] The present invention relates to a substrate for a TFT-matrix LCD, which is inexpensive and which has impurities TF in the liquid crystal.
The purpose is to obtain a substrate that does not deteriorate T characteristics. A transparent insulating protective film 2 is formed on a glass substrate for a TFT matrix type LCD by using the soda lime glass substrate 1 coated with the transparent insulating protective film 2 on one side or both sides of the glass substrate. So that the transparent insulating protective film 2 is simultaneously formed on both surfaces of the soda lime glass substrate 1 by the ALD method, and the gate electrode is formed on the soda lime glass substrate 1 coated with the transparent insulating protective film 2. After forming 3, the gate insulating film 4
As a configuration, a transparent insulating film is formed by the ALD method, and a transparent insulating film is also formed by the ALD method on the final protective film 12.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、薄膜トランジスタ（Ｔ
ＦＴ）マトリクス用の基板に関するものである。The present invention relates to a thin film transistor (T
It relates to a substrate for an FT) matrix.
【０００２】ＴＦＴ方式ＬＣＤパネルは、一般にその生
産コストが高く、パネル価格の低減化に大きな支障とな
っており、使用する基板においては安価なものが望まれ
ている。The TFT type LCD panel generally has a high production cost, which is a great obstacle to the reduction of the panel price, and an inexpensive substrate is desired.
【０００３】本発明を用いれば、安価なソーダライムガ
ラスを基板として用いることができるため、パネルの価
格の低減化に大きく貢献することができる。By using the present invention, inexpensive soda lime glass can be used as a substrate, which can greatly contribute to a reduction in the cost of the panel.
【０００４】[0004]
【従来の技術】図３は従来のＴＦＴ模式断面図である。
図において、24はソーダライムガラス基板、25はゲート
電極、26はゲート絶縁膜、27は動作半導体層、28はチャ
ネル保護膜、29は密着層、30はソース電極、31はドレイ
ン電極、32はドレインバスライン、33は画素電極、34は
最終保護膜である。2. Description of the Related Art FIG. 3 is a schematic sectional view of a conventional TFT.
In the figure, 24 is a soda lime glass substrate, 25 is a gate electrode, 26 is a gate insulating film, 27 is an operating semiconductor layer, 28 is a channel protective film, 29 is an adhesion layer, 30 is a source electrode, 31 is a drain electrode, and 32 is The drain bus line, 33 is a pixel electrode, and 34 is a final protective film.
【０００５】ＴＦＴ方式ＬＣＤパネルは個々の画素に対
してＴＦＴが配設され、メモリ機能を持たせてコントラ
スト良く表示させることができる。従来のＴＦＴマトリ
クスの構造は、図３に示すように、透明絶縁性ガラス基
板24上にアルミニウム(Al)等からなるゲート電極25、及
び、それを繋ぐゲートバスラインが、窒化シリコン(Si3
N4) 膜等からなるゲート絶縁膜26を介して、Al等のドレ
インバスライン32と直交するように形成され、その交差
部の各々にＴＦＴが配設される構造をとる。In the TFT type LCD panel, a TFT is provided for each pixel, and a memory function is provided so that a good contrast can be displayed. As shown in FIG. 3, the structure of a conventional TFT matrix is such that a gate electrode 25 made of aluminum (Al) or the like on a transparent insulating glass substrate 24 and a gate bus line connecting the gate electrode 25 are made of silicon nitride (Si 3
It is formed so as to be orthogonal to the drain bus line 32 of Al or the like through the gate insulating film 26 made of N 4 ) film or the like, and a TFT is provided at each intersection.
【０００６】ＴＦＴの構造は、ゲート絶縁膜26上に成膜
された動作半導体層27の上に Si3N4膜からなるチャネル
保護膜28を挟み、密着層29のｎ+ アモルファスシリコン
（α−Si）を介して、チタン(Ti)ソース電極30とTiドレ
イン電極31がそれぞれ配設されている。The structure of the TFT is such that the channel protection film 28 made of a Si 3 N 4 film is sandwiched on the operating semiconductor layer 27 formed on the gate insulating film 26, and the n + amorphous silicon (α- A titanium (Ti) source electrode 30 and a Ti drain electrode 31 are respectively arranged via Si).
【０００７】また、ソース電極30にはＩＴＯ画素電極33
が、ドレイン電極31にはドレインバスライン32がそれぞ
れ接続されている。The source electrode 30 has an ITO pixel electrode 33.
However, the drain bus lines 32 are connected to the drain electrodes 31, respectively.
【０００８】[0008]
【発明が解決しようとする課題】現在、ＴＦＴ方式ＬＣ
Ｄ用のガラス基板として用いられている基板は、ナトリ
ウム(Na)等のアルカリ金属や、バリウム(Ba)等のアルカ
リ土類金属等の不純物の含有量が低く、耐熱性に優れて
いるが、１枚当りの単価が高く、ＴＦＴ方式ＬＣＤを生
産するにあたってのコスト低減の支障となっている。Presently, TFT type LC
The substrate used as the glass substrate for D has a low content of impurities such as an alkali metal such as sodium (Na) and an alkaline earth metal such as barium (Ba) and is excellent in heat resistance, The unit price per sheet is high, which is an obstacle to cost reduction in producing a TFT type LCD.
【０００９】そこで、比較的安価なソーダライムガラス
（青ガラス）を、ＴＦＴ方式ＬＣＤ用の基板に使用する
と、ＴＦＴの形成時において、アルカリ金属（Na、Ｋ
等）やアルカリ土類金属（Ba、Mg等) がＴＦＴ中、又は
液晶中に混入し、良好な表示が行えなくなるという問題
点があった。Therefore, when soda lime glass (blue glass), which is relatively inexpensive, is used as a substrate for a TFT type LCD, an alkali metal (Na, K) is formed when the TFT is formed.
Etc.) and alkaline earth metals (Ba, Mg, etc.) are mixed in the TFT or the liquid crystal, and there is a problem that a good display cannot be performed.
【００１０】そこで、一般にソーダライムガラスを基板
として用いる場合、従来は二酸化シリコン (SiO2) コー
ト膜と呼ばれるSiO2膜によってガラス基板24の両面を保
護し、不純物の混入を防止する方法が採られているが、
ＴＦＴ形成時には様々な工程を要さなければならず、特
に、弗酸系のエッチャント（エッチング溶液）によって
コート膜がエッチングされて、保護膜として適当でない
ことが分かった。Therefore, when soda lime glass is generally used as a substrate, a method of protecting both surfaces of the glass substrate 24 with an SiO 2 film, which is conventionally called a silicon dioxide (SiO 2 ) coating film, to prevent impurities from entering is adopted. However,
It has been found that various steps are required to form a TFT, and in particular, the coat film is etched by a hydrofluoric acid-based etchant (etching solution), and is not suitable as a protective film.
【００１１】また、原子層デポジション（ＡＬＤ）装置
での成膜をコート膜として利用する場合でも、ガラス基
板の両面に成膜する場合、裏面を成膜した後に表面を成
膜するといった具合に、１枚のガラス基板を処理するの
に工程数を要するといった問題点があった。Even when the film formation in the atomic layer deposition (ALD) apparatus is used as the coat film, when the film is formed on both surfaces of the glass substrate, the back surface is formed and then the front surface is formed. There is a problem that it takes a number of steps to process one glass substrate.
【００１２】本発明は、安価で、且つ液晶中に不純物が
混入してＴＦＴ特性を劣化しないような基板を得ること
を目的として提供されるものである。The present invention is provided for the purpose of obtaining a substrate which is inexpensive and which does not deteriorate TFT characteristics due to impurities mixed in the liquid crystal.
【００１３】[0013]
【課題を解決するための手段】図１〜図２は本発明の原
理説明図であり、図１は本発明のＴＦＴ模式断面図、図
２は両面成膜用ＡＬＤ成膜装置である。1 and 2 are explanatory views of the principle of the present invention. FIG. 1 is a schematic sectional view of a TFT of the present invention, and FIG. 2 is an ALD film forming apparatus for double-sided film formation.
【００１４】図において，１はソーダライムガラス基
板、２は基板コート膜、３はゲート電極、４はゲート絶
縁膜、５は動作半導体層、６はチャネル保護膜、７は密
着層、８はソース電極、９はドレイン電極、10はドレイ
ンバスライン、11は画素電極、12は最終保護膜、13は真
空チャンバ、14はサンプルホルダ、15はトリメチルアル
ミニウム（ＴＭＡ）タンク、16はマスフロー、17はＴＭ
Ａガスノズル、18は水タンク、19は水蒸気ノズル、20は
バリアガスノズル、21は排気ダクト、22はオリフィス
弁、23はターボ分子ポンプである。In the figure, 1 is a soda lime glass substrate, 2 is a substrate coating film, 3 is a gate electrode, 4 is a gate insulating film, 5 is an operating semiconductor layer, 6 is a channel protective film, 7 is an adhesion layer, and 8 is a source. Electrode, 9 drain electrode, 10 drain bus line, 11 pixel electrode, 12 final protective film, 13 vacuum chamber, 14 sample holder, 15 trimethyl aluminum (TMA) tank, 16 mass flow, 17 TM
A gas nozzle, 18 is a water tank, 19 is a steam nozzle, 20 is a barrier gas nozzle, 21 is an exhaust duct, 22 is an orifice valve, and 23 is a turbo molecular pump.
【００１５】ＴＦＴ方式ＬＣＤのパネル等のガラス基板
に、ソーダライムガラスを用いる場合、不純物が回路、
及び液晶内へ混入するのを防ぐために、透明絶縁性保護
膜として耐弗酸性の強いＡＬＤ法によるアルミナ等の薄
い透明絶縁膜を基板の全面に成膜する。When soda lime glass is used for a glass substrate such as a panel of a TFT type LCD, impurities are contained in a circuit,
In order to prevent the liquid crystal from being mixed into the liquid crystal, a thin transparent insulating film such as alumina by ALD method having a strong resistance to hydrofluoric acid is formed on the entire surface of the substrate as a transparent insulating protective film.
【００１６】絶縁膜は基板の表面のみ、または基板の両
面に成膜するが、基板の両面に成膜した方が当然その効
果が高い。基板に片面だけ成膜する方法は、従来の成膜
法で膜を形成すれば良いが、基板の両面に成膜する場合
には、図２に示す両面成膜用ＡＬＤ成膜装置によって、
両面同時成膜を行い、工程数の増加を防ぐ。The insulating film is formed only on the surface of the substrate or on both surfaces of the substrate, but the effect is naturally higher when it is formed on both surfaces of the substrate. A film can be formed on a substrate only on one side by forming a film by a conventional film forming method. However, when forming a film on both sides of a substrate, a double-sided film forming ALD film forming apparatus shown in FIG.
Simultaneous film formation on both sides prevents an increase in the number of processes.
【００１７】両面成膜を行う場合には、温度差で損傷が
起きるのを防ぐ均熱板を基板に装着することが出来ない
ので、成膜温度は 400℃以下としなければならないが、
膜質の低下をもたらさない温度であるので、基板コート
膜として使用しても何等支障はない。When performing double-sided film formation, a soaking plate that prevents damage due to temperature difference cannot be mounted on the substrate, so the film formation temperature must be 400 ° C. or less.
Since the temperature is such that the film quality is not deteriorated, there is no problem even if it is used as a substrate coating film.
【００１８】即ち、本発明の目的は、図２にその構造図
で示すように、ＴＦＴマトリックス方式ＬＣＤ用のガラ
ス基板に、ガラス基板表面の片面、或いは両面に透明絶
縁性保護膜２を被覆したソーダライムガラス基板１を用
いることにより、また、図２に示す装置により、透明絶
縁性保護膜２をＡＬＤ法により形成することにより、そ
して、透明絶縁性保護膜２をソーダライムガラス基板１
の両面に同時に形成することにより、更に、透明絶縁性
保護膜２を被覆したソーダライムガラス基板１上にゲー
ト電極３等を形成した後、ゲート絶縁膜４としてＡＬＤ
法により透明絶縁膜を形成し、且つ、最終保護膜12にも
ＡＬＤ法による透明絶縁膜を形成することにより達成さ
れる。That is, as shown in the structural diagram of FIG. 2, the object of the present invention is to coat a glass substrate for a TFT matrix type LCD with a transparent insulating protective film 2 on one side or both sides of the glass substrate surface. By using the soda lime glass substrate 1 and by forming the transparent insulating protective film 2 by the ALD method by the apparatus shown in FIG. 2, the transparent insulating protective film 2 is formed by the soda lime glass substrate 1
By simultaneously forming the gate electrodes 3 and the like on the soda lime glass substrate 1 covered with the transparent insulating protective film 2 by forming the gate electrodes 3 as ALD as the gate insulating film 4.
This is achieved by forming a transparent insulating film by the method and also forming a transparent insulating film by the ALD method on the final protective film 12.
【００１９】[0019]
【作用】本発明の透明絶縁性保護膜を基板に被覆すれ
ば、ソーダライムガラス基板を用いて、ＴＦＴ方式ＬＣ
Ｄ等を形成することができ、また、ゲート絶縁膜、最終
保護膜（パッシベーション膜）にも、ＡＬＤ法により形
成した透明絶縁性保護膜を使用することによって、液晶
中に混入する不純物をより低減することができる。When the substrate is coated with the transparent insulating protective film of the present invention, a soda lime glass substrate is used for TFT type LC.
D and the like can be formed, and by using the transparent insulating protective film formed by the ALD method for the gate insulating film and the final protective film (passivation film), impurities mixed in the liquid crystal can be further reduced. can do.
【００２０】更に、ＡＬＤ法による透明絶縁性保護膜を
ガラス基板の裏面にも成膜することによって、裏面から
の不純物の混入をも防止することができ、ソーダライム
ガラス基板の両面に同時に成膜することによって保護膜
形成の工程を増やすことなく、ＴＦＴマトリクス用のガ
ラス基板を安価で提供することができ、延いては、安価
なＬＣＤパネルを供給することが可能となる。Furthermore, by forming a transparent insulating protective film by the ALD method also on the back surface of the glass substrate, it is possible to prevent impurities from being mixed from the back surface, and it is simultaneously formed on both surfaces of the soda lime glass substrate. By doing so, it is possible to provide a glass substrate for a TFT matrix at low cost without increasing the number of steps for forming a protective film, and it is possible to supply an inexpensive LCD panel.
【００２１】[0021]
【実施例】図１は本発明のＴＦＴ模式断面図、図２は基
板コート膜等の絶縁膜形成に用いた両面成膜用ＡＬＤ成
膜装置である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic sectional view of a TFT of the present invention, and FIG. 2 is an ALD film forming apparatus for double-sided film formation used for forming an insulating film such as a substrate coating film.
【００２２】以下、本発明の一実施例を図１のＴＦＴ模
式断面図、及び、図２の両面成膜用ＡＬＤ成膜装置を用
いて説明する。ソーダライムガラス基板１を図２に示す
ＡＬＤ成膜装置により基板コート膜２を後述する仕様に
より形成する。An embodiment of the present invention will be described below with reference to the TFT schematic sectional view of FIG. 1 and the double-sided ALD film forming apparatus for film formation shown in FIG. The soda lime glass substrate 1 is formed by the ALD film forming apparatus shown in FIG.
【００２３】成膜温度は 400℃、原料ガスとしてトリメ
チルアルミニウム（ＴＭＡ）ガスと水蒸気の２種類の気
体を使用し、アルミナ(Al2O3) 膜を 2,000Åの厚さにソ
ーダライムガラス基板１の両面に同時に成膜する。The film forming temperature is 400 ° C., two kinds of gases, trimethylaluminum (TMA) gas and water vapor, are used as raw material gases, and an alumina (Al 2 O 3 ) film is formed to a thickness of 2,000Å soda lime glass substrate 1 The film is formed on both surfaces simultaneously.
【００２４】その後に、Al等からなるゲート電極３、ゲ
ートバスラインを形成し、同様のＡＬＤ成膜装置により
ゲート絶縁膜４を 4,000Åの厚さに形成する。そして、
α−Siからなる動作半導体層５を形成し、ソース電極
８、ドレイン電極９、ソース電極８に接続する画素電極
11、ドレイン電極９に接続するドレインバスライン10を
それぞれ形成し、ＴＦＴ構造とする。After that, the gate electrode 3 and the gate bus line made of Al or the like are formed, and the gate insulating film 4 is formed to a thickness of 4,000Å by the same ALD film forming apparatus. And
A pixel electrode for forming an operating semiconductor layer 5 made of α-Si and connecting it to a source electrode 8, a drain electrode 9 and the source electrode 8.
11. A drain bus line 10 connected to the drain electrode 9 is formed to form a TFT structure.
【００２５】最後にＴＦＴを形成した後に、ＡＬＤアル
ミナ膜を同様の条件で成膜し、最終保護膜12とする。次
に、図２により、ＡＬＤ成膜装置を用いた成膜について
説明する。After the TFT is finally formed, an ALD alumina film is formed under the same conditions to form the final protective film 12. Next, the film formation using the ALD film forming apparatus will be described with reference to FIG.
【００２６】真空チャンバ13内に回転式サンプルホルダ
14が設けられ、ここにソーダライムガラス基板１を装着
する。原料ガスは、ＴＭＡタンク14よりマスフロー16に
よって流量50sccmに調整され、ＴＭＡガスノズル17を通
って真空チャンバ13内に導入され、ソーダライムガラス
基板１の表面に吹きつけられる。ＴＭＡに曝された基板
１は、サンプルホルダ14が１／２回転したときに、同様
の構成によって、流量が 100sccmの水蒸気に曝される。A rotary sample holder in the vacuum chamber 13.
14 is provided, and the soda lime glass substrate 1 is attached thereto. The raw material gas is adjusted to a flow rate of 50 sccm by the mass flow 16 from the TMA tank 14, introduced into the vacuum chamber 13 through the TMA gas nozzle 17, and blown onto the surface of the soda lime glass substrate 1. The substrate 1 exposed to TMA is exposed to water vapor having a flow rate of 100 sccm by the same configuration when the sample holder 14 rotates 1/2 turn.
【００２７】この作業を何千回も繰り返してアルミナ膜
が形成される。尚、基板コート膜２を 2,000Åの厚さに
成膜する時のサンプルホルダ14の全回転数は 2,700回
転、回転速度は60rpm である。This operation is repeated thousands of times to form an alumina film. When the substrate coat film 2 is formed to a thickness of 2,000Å, the total number of rotations of the sample holder 14 is 2,700 rotations, and the rotation speed is 60 rpm.
【００２８】２種類の原料ガスは、互いに真空チャンバ
13内で混合しないように、アルゴンからなるバリアガス
をバリアガスノズル20から噴出することにより遮蔽され
ている。The two kinds of source gases are mutually vacuum chambers.
The barrier gas composed of argon is shielded by being ejected from the barrier gas nozzle 20 so as not to mix inside 13.
【００２９】片面成膜の場合には、図２（ｂ）に示すよ
うなサンプルホルダ14の外側のノズルのみを用い、両面
成膜を行う場合には、図２（ｃ）に示すように、サンプ
ルホルダ14の内側のノズルよりも原料ガス、及びバリア
ガスを導入して成膜する。In the case of single-sided film formation, only the nozzles outside the sample holder 14 as shown in FIG. 2B are used, and in the case of double-sided film formation, as shown in FIG. A raw material gas and a barrier gas are introduced from a nozzle inside the sample holder 14 to form a film.
【００３０】余剰ガスは排気ダクト21よりターボ分子ポ
ンプ23によって排気され、真空チャンバ13内の圧力はオ
リフィス弁22を用いて０.01Torr に維持される。尚、ゲ
ート絶縁膜４や最終保護膜12も図３の装置を用いて、上
記と同様の方法で成膜する。The surplus gas is exhausted from the exhaust duct 21 by the turbo molecular pump 23, and the pressure in the vacuum chamber 13 is maintained at 0.01 Torr using the orifice valve 22. The gate insulating film 4 and the final protective film 12 are also formed by the same method as above using the apparatus shown in FIG.
【００３１】[0031]
【発明の効果】以上の説明から明らかなように，本発明
を用いて処理を施したソーダライムガラス基板を用いて
ＴＦＴ方式ＬＣＤを作成した結果、液晶内への不純物の
混入を著しく低減でき、その結果、ＴＦＴ特性において
も従来のガラス基板を用いた時と同様の特性を示し、ガ
ラス基板として十分使用できることが確認され、更に、
ソーダライムガラス基板の両面に同時に成膜することに
よって保護膜形成の工程を増やすことなく、ＴＦＴマト
リクス用のガラス基板を安価で提供することができ、安
価なＬＣＤパネルを供給することに寄与するところが大
きい。As is apparent from the above description, as a result of producing a TFT type LCD using a soda lime glass substrate which has been treated according to the present invention, it is possible to remarkably reduce the mixing of impurities into the liquid crystal. As a result, the TFT characteristics also showed the same characteristics as when using a conventional glass substrate, and it was confirmed that it can be sufficiently used as a glass substrate.
By simultaneously forming a film on both surfaces of a soda lime glass substrate, it is possible to provide a glass substrate for a TFT matrix at a low cost without increasing the number of steps for forming a protective film, which contributes to supplying an inexpensive LCD panel. large.
【図１】 本発明のＴＦＴ模式断面図FIG. 1 is a schematic sectional view of a TFT of the present invention.
【図２】 両面成膜用ＡＬＤ成膜装置FIG. 2 ALD film deposition apparatus for double-sided film deposition
【図３】 従来例のＴＦＴ模式断面図FIG. 3 is a schematic sectional view of a conventional TFT.
１ ソーダライムガラス基板 ２ 基板コート膜 ３ ゲート電極 ４ ゲート絶縁膜 ５ 動作半導体層 ６ チャネル保護膜 ７ 密着層 ８ ソース電極 ９ ドレイン電極 10 ドレインバスライン 11 画素電極 12 最終保護膜 13 真空チャンバ 14 サンプルホルダ 15 ＴＭＡタンク 16 マスフロー 17 ＴＭＡガスノズル 18 水タンク 19 水蒸気ノズル 20 バリアガスノズル 21 排気ダクト 22 オリフィス弁 23 ターボ分子ポンプ 1 soda lime glass substrate 2 substrate coating film 3 gate electrode 4 gate insulating film 5 operating semiconductor layer 6 channel protective film 7 adhesion layer 8 source electrode 9 drain electrode 10 drain bus line 11 pixel electrode 12 final protective film 13 vacuum chamber 14 sample holder 15 TMA tank 16 Mass flow 17 TMA gas nozzle 18 Water tank 19 Water vapor nozzle 20 Barrier gas nozzle 21 Exhaust duct 22 Orifice valve 23 Turbo molecular pump
Claims (4)
ス方式液晶表示装置（ＬＣＤ）用のガラス基板に、該ガ
ラス基板表面の片面、或いは両面に透明絶縁性保護膜２
を被覆したソーダライムガラス基板１を用いることを特
徴とする薄膜トランジスタマトリックスの製造方法。1. A glass substrate for a thin film transistor (TFT) matrix type liquid crystal display (LCD), and a transparent insulating protective film 2 on one or both surfaces of the glass substrate.
A method of manufacturing a thin film transistor matrix, which comprises using a soda lime glass substrate 1 coated with.
ション（ＡＬＤ）法により形成することを特徴とする請
求項１記載の薄膜トランジスタマトリックスの製造方
法。2. The method of manufacturing a thin film transistor matrix according to claim 1, wherein the transparent insulating protective film 2 is formed by an atomic layer deposition (ALD) method.
り前記ソーダライムガラス基板１の両面に同時に形成す
ることを特徴とする請求項１及び２記載の薄膜トランジ
スタマトリックスの製造方法。により、3. The method of manufacturing a thin film transistor matrix according to claim 1, wherein the transparent insulating protective film 2 is simultaneously formed on both surfaces of the soda lime glass substrate 1 by an ALD method. Due to
ダライムガラス基板１上にゲート電極３を形成した後、
ゲート絶縁膜４としてＡＬＤ法により透明絶縁膜を形成
し、且つ、最終保護膜12にもＡＬＤ法による透明絶縁膜
を形成することを特徴とする請求項１、及び２、及び３
記載の薄膜トランジスタマトリックスの製造方法。4. After forming a gate electrode 3 on a soda lime glass substrate 1 coated with the transparent insulating protective film 2,
The transparent insulating film is formed as the gate insulating film 4 by the ALD method, and the transparent insulating film is also formed as the final protective film 12 by the ALD method.
A method for manufacturing the thin film transistor matrix described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1206593A JPH06222388A (en) | 1993-01-28 | 1993-01-28 | Production of thin film transistor matrix |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1206593A JPH06222388A (en) | 1993-01-28 | 1993-01-28 | Production of thin film transistor matrix |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06222388A true JPH06222388A (en) | 1994-08-12 |
Family
ID=11795204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1206593A Withdrawn JPH06222388A (en) | 1993-01-28 | 1993-01-28 | Production of thin film transistor matrix |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06222388A (en) |
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