JPH06222373A - Circuit connection method - Google Patents
Circuit connection methodInfo
- Publication number
- JPH06222373A JPH06222373A JP897393A JP897393A JPH06222373A JP H06222373 A JPH06222373 A JP H06222373A JP 897393 A JP897393 A JP 897393A JP 897393 A JP897393 A JP 897393A JP H06222373 A JPH06222373 A JP H06222373A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- lead
- connection
- conductive particles
- circuit connecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- Liquid Crystal (AREA)
Abstract
(57)【要約】
【目的】 回路の接続方法について、狭ピッチの接続に
対して隣接間の絶縁抵抗を確保し、接続作業の効率化を
はかる。
【構成】 回路基板上の取り出し電極2の表面に絶縁層
(陽極酸化層3)を積層し、異方導電性接着剤5中の導
電性粒子4にて絶縁層を破り接続を実現する。
(57) [Abstract] [Purpose] Regarding the circuit connection method, to ensure the insulation resistance between adjacent connections for narrow-pitch connections, and to improve the efficiency of connection work. [Structure] An insulating layer (anodized layer 3) is laminated on the surface of the extraction electrode 2 on the circuit board, and the insulating layer is broken by the conductive particles 4 in the anisotropic conductive adhesive 5 to realize the connection.
Description
【0001】[0001]
【産業上の利用分野】本発明は、回路の接続方法に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a circuit connecting method.
【0002】[0002]
【従来の技術】近年の部品・デバイスの開発では高密度
な回路の接続を如何に実現するかが課題となっている。2. Description of the Related Art In the recent development of parts and devices, how to realize high-density circuit connection has become an issue.
【0003】特に液晶パネルのようなデバイスでは多数
点、高密度の接続の実現が製造上の重要なポイントであ
る。そこで、本明細書において以下の従来例および実施
例の説明は液晶パネルの場合を例にして説明する。Particularly in devices such as liquid crystal panels, realization of a large number of points and high-density connection is an important point in manufacturing. Therefore, in the present specification, the following description of conventional examples and examples will be made by taking a liquid crystal panel as an example.
【0004】以下に従来の液晶パネルの回路の接続方法
について図面を参照しながら説明する。A conventional method of connecting circuits of a liquid crystal panel will be described below with reference to the drawings.
【0005】図5は従来の液晶パネルを示す斜視図であ
る。液晶を駆動するための駆動IC9を搭載した樹脂フ
ィルム6がガラス基板7に実装されている。図示してい
ないが樹脂フィルム6の外側に外部基板があり外部基板
より樹脂フィルム6に電気信号および電源が供給され
る。このような実装形態をTAB(Tape Auto
mated Bonding)方式と呼び、液晶パネル
製造法の主流となっている(例えば 渥美他ら ”液晶
モジュールのTAB実装技術”電子技術 第32巻第7
号)。FIG. 5 is a perspective view showing a conventional liquid crystal panel. A resin film 6 having a drive IC 9 for driving liquid crystal is mounted on a glass substrate 7. Although not shown, an external substrate is provided outside the resin film 6, and electric signals and power are supplied to the resin film 6 from the external substrate. Such a mounting form is referred to as TAB (Tape Auto).
It is called a "matted bonding" method and is the mainstream of the liquid crystal panel manufacturing method (eg, Atsumi et al., "TAB mounting technology for liquid crystal modules", Electronic Technology, Vol.
issue).
【0006】図6は従来の液晶パネルの回路の接続方法
を示す断面図である。ポリイミド等の樹脂フィルム6上
に銅箔等で形成したリード1が液晶パネル上の取り出し
電極2に接続されている。接着剤5中に分散された導電
性粒子4はリード1と取り出し電極2に接触して電気的
接続を実現している。接触抵抗低減のために、リード1
にはAuあるいはSn等がメッキされ、取り出し電極2
にはITOなど表面が安定で酸化膜等ができにくい材料
を用いることが多い。通常の作業では、導電性粒子4を
混入したフィルム状あるいはペースト状の接着剤5をガ
ラス基板7上の取り出し電極2を配設した部分に張り付
ける、または塗布した後に樹脂フィルム6上に形成され
たリード1をガラス基板7上の取り出し電極2と正確に
位置合わせし、上方より熱圧着する。FIG. 6 is a cross-sectional view showing a conventional method for connecting circuits in a liquid crystal panel. A lead 1 formed of a copper foil or the like on a resin film 6 of polyimide or the like is connected to a lead electrode 2 on the liquid crystal panel. The conductive particles 4 dispersed in the adhesive 5 come into contact with the leads 1 and the extraction electrodes 2 to realize electrical connection. Lead 1 to reduce contact resistance
The electrode 2 is plated with Au, Sn, etc.
In many cases, a material such as ITO that has a stable surface and is hard to form an oxide film is used. In a normal operation, a film-shaped or paste-shaped adhesive 5 mixed with conductive particles 4 is attached to or applied on a portion of the glass substrate 7 where the extraction electrode 2 is arranged, and then formed on the resin film 6. The lead 1 is accurately aligned with the extraction electrode 2 on the glass substrate 7, and thermocompression bonded from above.
【0007】また、TFT(Thin Film Tr
ansistor)を用いたような液晶パネルではガラ
ス基板7の表面を窒化膜等で保護している場合が多く、
その場合は図7に示すように保護膜8の取り出し電極2
上に開口部を設け接続する。本従来例において、相対す
る支持体は樹脂フィルム6とガラス基板7であり、接続
用回路はリード1と取り出し電極2で電気的接続部材は
導電性粒子4を分散した接着剤5である。In addition, a TFT (Thin Film Tr)
In a liquid crystal panel using an anistor), the surface of the glass substrate 7 is often protected by a nitride film or the like,
In that case, as shown in FIG. 7, the extraction electrode 2 of the protective film 8 is formed.
An opening is provided on the top and is connected. In this conventional example, the opposing supports are the resin film 6 and the glass substrate 7, the connecting circuit is the lead 1 and the lead electrode 2, and the electrical connecting member is the adhesive 5 in which the conductive particles 4 are dispersed.
【0008】[0008]
【発明が解決しようとする課題】しかし、このような工
法では図中に示すように隣接する取り出し電極2あるい
はリード1の間にも導電性粒子4が存在し、隣接間での
絶縁抵抗を劣化させる原因となる。この問題は高精細化
して接続ピッチが微細化した液晶パネルほど重大なもの
である。接続ピッチの微細化に対しては導電性粒子4の
大きさを小さくして対応するが、粒子径が小さくなるに
従って接着剤5に導電性粒子4を均一に分散することが
困難になり、数個の導電性粒子4が凝集する現象がおこ
る。そのため隣接する取り出し電極2あるいはリード1
の間に凝集した粒子が絶縁抵抗を劣化させてしまう。However, in such a construction method, as shown in the drawing, the conductive particles 4 are also present between the adjacent extraction electrodes 2 or the leads 1 and the insulation resistance between the adjacent electrodes is deteriorated. Cause This problem becomes more serious as the liquid crystal panel becomes finer and the connection pitch becomes finer. Although the size of the conductive particles 4 is reduced to reduce the connection pitch, it becomes difficult to uniformly disperse the conductive particles 4 in the adhesive 5 as the particle diameter decreases. A phenomenon occurs in which the individual conductive particles 4 aggregate. Therefore, the adjacent extraction electrode 2 or lead 1
Particles agglomerated during this deteriorate the insulation resistance.
【0009】このように隣接する接続回路間の絶縁を確
保することが回路の接続方法における大きな課題となっ
ていた。Thus, ensuring insulation between adjacent connecting circuits has been a major problem in the circuit connecting method.
【0010】本発明はこのような課題を解決するもので
あり、狭ピッチの接続においても安定な回路の接続方法
を提供するものである。The present invention solves such problems and provides a stable circuit connecting method even in a narrow pitch connection.
【0011】[0011]
【課題を解決するための手段】上記目的を達成するため
に、本発明の回路の接続方法は接続用回路を含む支持体
の表面に絶縁膜を形成して接続を行うものである。In order to achieve the above-mentioned object, the circuit connecting method of the present invention is to form an insulating film on the surface of a support containing a connecting circuit for connection.
【0012】[0012]
【作用】上記の手段によれば、あるいは接続用回路の表
面に電気絶縁性の層を形成したため隣接する接続用回路
の間の絶縁性が狭ピッチの接続構造に関しても充分確保
できる。According to the above-mentioned means, or because the electrically insulating layer is formed on the surface of the connecting circuit, the insulating property between the adjacent connecting circuits can be sufficiently ensured even with a narrow pitch.
【0013】[0013]
【実施例】以下、本発明の実施例について同一機能を有
するものには同一番号を付して詳しい説明を省略し、相
違する点について説明する。Embodiments of the present invention having the same function are denoted by the same reference numerals, detailed description thereof will be omitted, and different points will be described.
【0014】(実施例1)図1は本発明の第1の実施例
の回路の接続方法を示す断面図である。液晶パネル上に
TFT等を作り込む段階で取り出し電極2の表面に絶縁
性の陽極酸化層3が形成されている。樹脂フィルム6を
位置合わせし圧着する際に導電性粒子4は陽極酸化層3
にくいこみ取り出し電極2まで達してリード1と取り出
し電極2の電気的接続を確保する。この原理からわかる
ように導電性粒子4は比較的硬いものが望ましい。発明
者の実験では取り出し電極2にAlを用いて陽極酸化層
3を形成し、Ni粒子の導電性粒子4を用いた。(Embodiment 1) FIG. 1 is a sectional view showing a circuit connecting method according to a first embodiment of the present invention. An insulating anodic oxide layer 3 is formed on the surface of the take-out electrode 2 when a TFT or the like is formed on the liquid crystal panel. When the resin film 6 is aligned and pressure-bonded, the conductive particles 4 become the anodic oxide layer 3
The lead electrode 1 and the lead-out electrode 2 are electrically connected to reach the lead-out electrode 2 which is difficult to reach. As can be seen from this principle, the conductive particles 4 are preferably relatively hard. In the experiment of the inventor, the anodic oxide layer 3 was formed by using Al for the extraction electrode 2 and the conductive particles 4 of Ni particles were used.
【0015】取り出し電極2の表面には陽極酸化層3が
形成され、接続に必要な部分のみ陽極酸化層3が破られ
てリード1と取り出し電極2が接続されているこの構成
では隣接するリード1、取り出し電極2間の絶縁抵抗は
非常に高いものである。An anodized layer 3 is formed on the surface of the lead-out electrode 2, and the lead 1 and the lead-out electrode 2 are connected by breaking the anodized layer 3 only at the portions necessary for connection. The insulation resistance between the extraction electrodes 2 is very high.
【0016】また、発明者は陽極酸化の代わりに取り出
し電極2を形成したガラス基板7を熱処理することによ
って、Al表面に酸化膜が形成され同様の効果を得られ
ることを確認している。The inventor has also confirmed that an oxide film is formed on the Al surface and the same effect can be obtained by heat-treating the glass substrate 7 on which the extraction electrode 2 is formed instead of anodic oxidation.
【0017】(実施例2)狭ピッチの接続についてはリ
ード1と取り出し電極2の位置合わせが困難な作業とな
ってくるが、本発明の回路の接続方法においては、図2
に示すようにリード1と取り出し電極2の位置合わせが
若干ずれた場合においても隣接間の絶縁抵抗には何等問
題なく、位置合わせおよび圧着時のズレに対してマージ
ンが大きく、工程の安定にも大きく寄与するものであ
る。(Embodiment 2) For the connection at a narrow pitch, it becomes difficult to align the lead 1 and the take-out electrode 2 with each other. However, in the circuit connecting method of the present invention, FIG.
As shown in Fig. 7, even if the lead 1 and the lead-out electrode 2 are slightly misaligned, there is no problem with the insulation resistance between adjacent ones, and there is a large margin for misalignment at the time of alignment and crimping, which also contributes to stable process It is a great contribution.
【0018】(実施例3)図3は本発明の第3の実施例
の回路の接続方法を示す断面図である。従来例で説明し
たようにTFT液晶パネル等ではガラス基板7上に保護
膜8が形成されているが、本実施例では保護膜8に開口
部を設けることなく接続を行っている。発明者の実験で
は導電性粒子4に比較的硬度の高いものを用い充分な圧
力をもって加熱圧着することによって、導電性粒子4は
保護膜8を破って取り出し電極2に達し電気的接続を実
現できた。その際の保護膜はTFTの製造に通常用いら
れているシリコン窒化膜で膜厚は1000〜2000Å
であり、導電性粒子4には実施例1と同様にNi粒子を
用いた。(Embodiment 3) FIG. 3 is a sectional view showing a circuit connecting method according to a third embodiment of the present invention. As described in the conventional example, in the TFT liquid crystal panel or the like, the protective film 8 is formed on the glass substrate 7, but in this embodiment, the protective film 8 is connected without providing an opening. In an experiment conducted by the inventor, the conductive particles 4 having a relatively high hardness are used and heated and pressed under a sufficient pressure, so that the conductive particles 4 can break the protective film 8 and reach the extraction electrode 2 to realize an electrical connection. It was At that time, the protective film is a silicon nitride film that is usually used for manufacturing TFTs, and the film thickness is 1000 to 2000Å
Thus, as the conductive particles 4, Ni particles were used as in Example 1.
【0019】(実施例4)図4は本発明の第4の実施例
の回路の接続方法を示す断面図である。リード1と取り
出し電極2を接続する前にリード1の表面を保護膜8に
て被覆しておく。発明者の実験では保護膜8の材料とし
てポリウレタン樹脂を用いた。樹脂フィルム6を位置合
わせし圧着する際に導電性粒子4は保護膜8にくいこみ
リード1まで達してリード1と取り出し電極2の電気的
接続を確保する。実施例1と同様に導電性粒子4には硬
度の高いものを用いるのが望ましい。(Embodiment 4) FIG. 4 is a sectional view showing a circuit connecting method according to a fourth embodiment of the present invention. Before connecting the lead 1 and the extraction electrode 2, the surface of the lead 1 is covered with a protective film 8. In the inventors' experiment, polyurethane resin was used as the material of the protective film 8. When the resin film 6 is aligned and pressure-bonded, the conductive particles 4 penetrate into the protective film 8 and reach the lead 1 to secure the electrical connection between the lead 1 and the extraction electrode 2. As in the case of Example 1, it is desirable to use conductive particles 4 having high hardness.
【0020】なお、以上の実施例に示した陽極酸化層3
と絶縁膜8を併用すれば理想的な構成となることはいう
までもない。The anodic oxide layer 3 shown in the above embodiment is used.
It goes without saying that an ideal configuration can be obtained by using the insulating film 8 and the insulating film 8 together.
【0021】また、本実施例では液晶パネルについて述
べたが、本発明の内容は液晶以外のプラズマディスプレ
イ等の電子ディスプレイデバイスやセラミック多層基板
あるいはプリント配線板に多ピンLSIをTAB実装し
たマルチチップモジュール等、電子部品の実装方法とし
て広く用いることができるものである。Although the liquid crystal panel has been described in this embodiment, the contents of the present invention are a multi-chip module in which a multi-pin LSI is TAB mounted on an electronic display device such as a plasma display other than liquid crystal, a ceramic multilayer substrate or a printed wiring board. It can be widely used as a mounting method for electronic components.
【0022】[0022]
【発明の効果】上記実施例より明らかなように本発明は
取り出し電極または回路表面に保護膜を設けて絶縁性を
確保し、接続に必要な部分のみ導電性粒子にて保護膜を
破って導電性をもたせる構成であるので、狭ピッチの接
続に対しても隣接間の絶縁抵抗を充分高く保つことがで
きた。導電性粒子には比較的硬度の高い金属粒子を用い
ることで保護膜を破ることを可能としている。As is apparent from the above-described embodiments, the present invention provides a protective film on the take-out electrode or the surface of the circuit to ensure the insulation, and breaks the protective film only by the conductive particles at the portions necessary for connection to make the conductive film. Since the structure has good properties, the insulation resistance between adjacent parts can be kept sufficiently high even for a narrow pitch connection. It is possible to break the protective film by using metal particles having a relatively high hardness as the conductive particles.
【図1】本発明の第1の実施例の回路の接続方法におけ
る接続部の断面図FIG. 1 is a sectional view of a connecting portion in a circuit connecting method according to a first embodiment of the present invention.
【図2】本発明の第2の実施例の回路の接続方法におけ
る接続部の断面図FIG. 2 is a sectional view of a connecting portion in a circuit connecting method according to a second embodiment of the present invention.
【図3】本発明の第3の実施例の回路の接続方法におけ
る接続部の断面図FIG. 3 is a sectional view of a connecting portion in a circuit connecting method according to a third embodiment of the present invention.
【図4】本発明の第4の実施例の回路の接続方法におけ
る接続部の断面図FIG. 4 is a sectional view of a connecting portion in a circuit connecting method according to a fourth embodiment of the present invention.
【図5】従来例の回路の接続方法における接続部の斜視
図FIG. 5 is a perspective view of a connection portion in a conventional circuit connection method.
【図6】従来例の回路の接続方法における接続部の断面
図FIG. 6 is a cross-sectional view of a connection portion in a conventional circuit connection method.
【図7】従来例の回路の接続方法における接続部の断面
図FIG. 7 is a cross-sectional view of a connection portion in a conventional circuit connection method.
1 リード 2 取り出し電極 3 陽極酸化層 4 導電性粒子 5 接着剤 6 樹脂フィルム 7 ガラス電極 8 保護膜 9 駆動IC DESCRIPTION OF SYMBOLS 1 Lead 2 Extraction electrode 3 Anodized layer 4 Conductive particles 5 Adhesive 6 Resin film 7 Glass electrode 8 Protective film 9 Driving IC
───────────────────────────────────────────────────── フロントページの続き (72)発明者 河津 明美 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Akemi Kawazu 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.
Claims (8)
続用回路が電気的接続部材により相互に接続される回路
の接続方法において、接続用回路を含む支持体の少なく
とも一方の表面に、電気絶縁性の絶縁膜を設けたことを
特徴とする回路の接続方法。1. A method of connecting circuits in which connecting circuits formed on opposite supports are connected to each other by an electrical connecting member, and at least one surface of the support including the connecting circuits is provided. And a circuit connecting method characterized in that an electrically insulating insulating film is provided.
施して絶縁膜を形成したことを特徴とする請求項1記載
の回路の接続方法。2. The circuit connecting method according to claim 1, wherein at least one of the connecting circuits is surface-treated to form an insulating film.
る請求項2記載の回路の接続方法。3. The circuit connecting method according to claim 2, wherein the surface treatment is anodic oxidation.
請求項2記載の回路の接続方法。4. The circuit connecting method according to claim 2, wherein the surface treatment is heat treatment.
あることを特徴とする請求項2記載の回路の接続方法。5. The circuit connecting method according to claim 2, wherein the surface treatment is vapor deposition of a material other than the connecting circuit.
ティングして絶縁膜としたことを特徴とする請求項1記
載の回路の接続方法。6. The circuit connecting method according to claim 1, wherein a material other than the connecting circuit is coated on the surface of the support to form an insulating film.
特徴とする請求項7記載の回路の接続方法。7. The circuit connecting method according to claim 7, wherein an organic polymer material is used for the insulating film.
たことを特徴とする請求項1〜7のいずれかに記載の回
路の接続方法。8. The circuit connecting method according to claim 1, wherein an anisotropic conductive adhesive is used for the electrical connecting member.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP897393A JPH06222373A (en) | 1993-01-22 | 1993-01-22 | Circuit connection method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP897393A JPH06222373A (en) | 1993-01-22 | 1993-01-22 | Circuit connection method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH06222373A true JPH06222373A (en) | 1994-08-12 |
Family
ID=11707635
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP897393A Pending JPH06222373A (en) | 1993-01-22 | 1993-01-22 | Circuit connection method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH06222373A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004165659A (en) * | 2003-11-07 | 2004-06-10 | Hitachi Chem Co Ltd | Method of connecting electrodes and connecting structure of electrodes obtained by the same |
JP2012058533A (en) * | 2010-09-09 | 2012-03-22 | Hitachi Displays Ltd | Liquid-crystal display device |
-
1993
- 1993-01-22 JP JP897393A patent/JPH06222373A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004165659A (en) * | 2003-11-07 | 2004-06-10 | Hitachi Chem Co Ltd | Method of connecting electrodes and connecting structure of electrodes obtained by the same |
JP2012058533A (en) * | 2010-09-09 | 2012-03-22 | Hitachi Displays Ltd | Liquid-crystal display device |
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