JPH06140659A - Optical semiconductor device - Google Patents
Optical semiconductor deviceInfo
- Publication number
- JPH06140659A JPH06140659A JP4291366A JP29136692A JPH06140659A JP H06140659 A JPH06140659 A JP H06140659A JP 4291366 A JP4291366 A JP 4291366A JP 29136692 A JP29136692 A JP 29136692A JP H06140659 A JPH06140659 A JP H06140659A
- Authority
- JP
- Japan
- Prior art keywords
- light
- semiconductor region
- light receiving
- resistance semiconductor
- high resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 230000003287 optical effect Effects 0.000 title claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000013307 optical fiber Substances 0.000 abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000835 fiber Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、光ファイバを使用して
光通信を行うための光半導体装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device for optical communication using an optical fiber.
【０００２】[0002]
【従来の技術】近年、受光素子の分野においては、より
高速な応答特性を有するものが要求されており、特に、
光ファイバを使用した光通信における受光素子の分野に
おいては、使用される様々な光ファイバに対して応答波
形になまりが無い高速応答性を有し且つ低コストなもの
が強く要求されてきており、これらに応える受光素子の
必要性が高まっている。2. Description of the Related Art In recent years, in the field of light receiving elements, one having a faster response characteristic has been demanded.
In the field of light-receiving elements in optical communication using optical fibers, there is a strong demand for low-cost ones that have high-speed response without rounding in response waveforms for various optical fibers used, There is an increasing need for a light receiving element that meets these requirements.
【０００３】一般に、光電流は受光部へ入射した光によ
って生成された電子・正孔対がもとになって流れる電流
であり、空乏層内で生成された電子・正孔対は、空乏層
にかかる電界によってスピーディに移動し高速応答とな
る。しかしながら、空乏層外の感度を有する領域におい
て生成された電子・正孔対は、応答の遅い拡散電流成分
となるため応答波形になまりの生じる原因となる。Generally, a photocurrent is a current flowing based on an electron / hole pair generated by light incident on a light receiving portion, and an electron / hole pair generated in a depletion layer is a depletion layer. The electric field applied to the element moves speedily to provide a high-speed response. However, the electron-hole pair generated in the region having the sensitivity outside the depletion layer becomes a diffusion current component having a slow response, which causes the response waveform to be rounded.
【０００４】そこで、高速応答性を有する受光素子実現
のためには空乏層以外の部分への光の入射を抑制してや
る必要があり、そのため、従来の受光素子においては、
高抵抗半導体領域の厚みを、使用する電圧下で十分空乏
層化するように設定し、さらに、空乏層外への光の入射
を防止するために受光部周囲に遮光層を設けてある。Therefore, in order to realize a light receiving element having a high-speed response, it is necessary to suppress the incidence of light on a portion other than the depletion layer. Therefore, in the conventional light receiving element,
The thickness of the high-resistance semiconductor region is set so as to be sufficiently depleted under the voltage used, and a light-shielding layer is provided around the light-receiving portion in order to prevent light from entering the outside of the depletion layer.
【０００５】図３は従来の受光素子の断面構造を、図４
は従来の受光素子の平面構造をそれぞれ示している。同
図に示すように、低抵抗なＮ型半導体シリコン基板１上
にエピタキシャル成長により厚みｄなるＮ型の高抵抗領
域２が形成され、該Ｎ型の高抵抗領域２内にＰ型の受光
部３が形成されている。Ｐ型の受光部３の周囲にはアノ
ード電極を兼ねた遮光層４がアルミニウムにより形成さ
れており、使用電圧下で十分空乏層化した空乏層６以外
の部分への表面よりの入射光(光１)を遮断している。ま
た、Ｎ型半導体シリコン基板１の下面にはカソード電極
５が形成されている。FIG. 3 shows a cross-sectional structure of a conventional photodetector, and FIG.
Shows respective planar structures of conventional light receiving elements. As shown in the figure, an N type high resistance region 2 having a thickness d is formed by epitaxial growth on a low resistance N type semiconductor silicon substrate 1, and a P type light receiving portion 3 is formed in the N type high resistance region 2. Are formed. A light-shielding layer 4 also serving as an anode electrode is formed of aluminum around the P-type light receiving portion 3, and incident light (light) from the surface to a portion other than the depletion layer 6 fully depleted under a working voltage is formed. 1) is cut off. A cathode electrode 5 is formed on the lower surface of the N-type semiconductor silicon substrate 1.
【０００６】[0006]
【発明が解決しようとする課題】ところが、従来の受光
素子においては、遮光層４は、受光部３に対しては図３
に示されるように受光量を減じずコンタクトの取れる範
囲で形成されている。そのため、開口数の比較的小さい
(入射角が小さい)石英光ファイバなどに対しては問題と
ならなかった斜め方向からの入射光(光２)の影響が、近
年、中速・中距離の光通信に用途の広がっているプラス
チック クラッド ファイバや多成分ガラスファイバなど
開口数の大きい(入射角が大きい)光ファイバを用いた場
合には問題となり、斜め方向から入射してきた光(２)が
空乏層６外へと達し、電子・正孔対を生成して拡散電流
となり光電流として取り出される。However, in the conventional light-receiving element, the light-shielding layer 4 is provided with respect to the light-receiving portion 3 as shown in FIG.
As shown in (3), the light receiving amount is not reduced and the contact is formed. Therefore, the numerical aperture is relatively small
The influence of incident light (light 2) from an oblique direction, which did not pose a problem for quartz optical fibers (with a small incident angle), has been widely used in recent years in medium-speed and medium-distance optical communication. This is a problem when using an optical fiber with a large numerical aperture (large incident angle) such as a clad fiber or a multi-component glass fiber, and the light (2) incident from an oblique direction reaches outside the depletion layer 6 and A hole pair is generated and becomes a diffusion current, which is taken out as a photocurrent.
【０００７】この拡散電流は空乏層内に生成されるドリ
フト電流に比べ、光が入射されてから光電流になるまで
の時間が遅いために、応答波形がなまり、高速応答の妨
げになるという問題がある。This diffusion current is slower than the drift current generated in the depletion layer from the time when light is incident until it becomes a photocurrent, so that the response waveform is blunted, which hinders high-speed response. There is.
【０００８】本発明は、使用する光ファイバの種類や径
等の違いに伴う光入射により発生する不必要な光電流を
防止し、これにより応答波形になまりが無い高速応答性
に優れた光通信が実現できる光半導体装置を提供するこ
とを目的とする。The present invention prevents unnecessary photocurrent generated by light incidence due to the difference in the type and diameter of the optical fiber used, and thereby, optical communication excellent in high-speed response without rounding of response waveform. It is an object of the present invention to provide an optical semiconductor device capable of realizing the above.
【０００９】[0009]
【課題を解決するための手段】本発明は、非透過性の材
料による遮光層を、高抵抗半導体領域の上面における受
光部周囲に対して高抵抗半導体領域の厚みを考慮した幅
だけオーバラップして形成するものである。According to the present invention, a light-shielding layer made of a non-transmissive material is overlapped with the periphery of a light receiving portion on the upper surface of a high resistance semiconductor region by a width considering the thickness of the high resistance semiconductor region. To be formed.
【００１０】具体的に本発明が講じた解決手段は、第１
導電型の低抵抗半導体基板上に第１導電型の高抵抗半導
体領域が形成され、さらに、該高抵抗半導体領域内に第
２導電型の半導体領域よりなる受光部が形成され、前記
高抵抗半導体領域の上面における前記受光部周囲には、
略全面に亘って非透過性材料よりなる遮光層が形成され
た光半導体装置を対象とし、前記遮光層が前記受光部周
囲に対して、幅ｄ・ｔａｎ〔ｓｉｎ~1（１／ｎ）〕
（ｄ：高抵抗半導体領域厚み、ｎ：高抵抗半導体領域材
料屈折率）以上オーバラップして形成されている構成と
するものである。オーバラップされる幅は、ファイバ出
射光の最大広がり角θを考慮し、θ＝90度時の高抵抗半
導体領域厚み、及び、材料の屈折率より設定した。[0010] Specifically, the first means for solving the present invention is
A first conductivity type high resistance semiconductor region is formed on a conductivity type low resistance semiconductor substrate, and a light receiving portion made of a second conductivity type semiconductor region is formed in the high resistance semiconductor region. Around the light receiving portion on the upper surface of the region,
For an optical semiconductor device in which a light shielding layer made of a non-transmissive material is formed over substantially the entire surface, the light shielding layer has a width d · tan [sin to 1 (1 / n)] with respect to the periphery of the light receiving portion.
(D: thickness of high-resistance semiconductor region, n: refractive index of high-resistance semiconductor region material) or more. The overlapping width was set by considering the maximum divergence angle θ of the light emitted from the fiber, the thickness of the high resistance semiconductor region when θ = 90 degrees, and the refractive index of the material.
【００１１】[0011]
【作用】本発明によれば、受光部周囲に略全面に亘って
形成された非透過性材料による遮光層を、高抵抗半導体
領域の上面における受光部周囲に対して十分オーバラッ
プして形成しているため、光ファイバの種類や径等が異
なり入射角が異なっても、受光部周囲の空乏層以外の領
域に光が入射しないので、拡散電流成分の原因になる周
辺光の影響を最小限に抑制できる。According to the present invention, the light-shielding layer made of a non-transmissive material is formed over the entire surface of the light receiving portion so as to sufficiently overlap with the periphery of the light receiving portion on the upper surface of the high resistance semiconductor region. Therefore, even if the type and diameter of the optical fiber are different and the incident angle is different, the light does not enter the area other than the depletion layer around the light receiving part, so the influence of ambient light that causes a diffuse current component is minimized. Can be suppressed to.
【００１２】[0012]
【実施例】図１は本発明の一実施例に係る受光素子の断
面構造を、図２は該受光素子の平面構造をそれぞれ示し
ている。1 shows a sectional structure of a light receiving element according to an embodiment of the present invention, and FIG. 2 shows a planar structure of the light receiving element.
【００１３】同図に示すように、低抵抗なＮ型半導体シ
リコン基板１上にエピタキシャル成長法により厚みｄな
るＮ型の高抵抗半導体領域２(50μm)が形成されてお
り、高抵抗半導体領域２の比抵抗は300〜600Ω・cmに設
定されている。高抵抗半導体領域２の中に不純物として
のボロンがドーピングされることによりＰ型半導体領域
よりなる受光部３が形成されている。この受光部３の径
は、入射角の大きいＰＣＦ200／230(コア径：200μm、
開口数：0.4)の光ファイバを用いることを考慮して直径
500μmに設定してある。As shown in FIG. 1, an N-type high-resistance semiconductor region 2 (50 μm) having a thickness d is formed on the low-resistance N-type semiconductor silicon substrate 1 by an epitaxial growth method. The specific resistance is set to 300 to 600 Ω · cm. The high-resistance semiconductor region 2 is doped with boron as an impurity to form the light receiving portion 3 made of a P-type semiconductor region. The diameter of the light receiving portion 3 is PCF200 / 230 (core diameter: 200 μm, which has a large incident angle,
Diameter considering the use of optical fiber with numerical aperture: 0.4)
It is set to 500 μm.
【００１４】また、Ｎ型半導体シリコン基板１の下面に
はカソード電極５が形成されている。Ｐ型の受光部３の
周囲には遮光層４が形成され、遮光層４は、本実施例の
特徴として、最大角で入射してきた光(3)も、使用電圧
下で十分空乏層化した空乏層６内ですべて取り込むよう
に受光部周囲に対して幅15μmオーバラップするように
直径470μmに設定してある。A cathode electrode 5 is formed on the lower surface of the N-type semiconductor silicon substrate 1. A light-shielding layer 4 is formed around the P-type light-receiving portion 3, and the light-shielding layer 4 has a feature of the present embodiment that light (3) incident at a maximum angle is sufficiently depleted under a working voltage. The diameter is set to 470 μm so as to overlap with the periphery of the light receiving portion by 15 μm so as to capture all in the depletion layer 6.
【００１５】今、開口数0.4の場合、最大24度の広がり
をもって受光部３へ光(3)が入射する。シリコンの屈折
率3.44を考慮すると入射した光(3)は受光部３内を最大
７度の広がりをもって進む。逆バイアス印加によって空
乏層が十分広がっているとき、縦方向へ50μm入射され
た光は最大約６μm(50μm＊ｔａｎ７°)広がる。よっ
て、すべての入射した光(3)を空乏層６内で取り込むに
は受光部３の周囲に対して遮光層を６μm以上覆ってお
けば良いため、本実施例においては、開口数を最大限考
慮して15μmオーバラップするように形成した。When the numerical aperture is 0.4, the light (3) is incident on the light receiving portion 3 with a maximum spread of 24 degrees. Considering the refractive index of 3.44 of silicon, the incident light (3) travels in the light receiving portion 3 with a maximum spread of 7 degrees. When the depletion layer is sufficiently widened by applying the reverse bias, the light incident in the vertical direction of 50 μm spreads at maximum about 6 μm (50 μm * tan7 °). Therefore, in order to capture all the incident light (3) in the depletion layer 6, it is sufficient to cover the light-receiving portion 3 with a light-shielding layer of 6 μm or more. Therefore, in this embodiment, the numerical aperture is maximized. Considering this, they were formed so as to overlap by 15 μm.
【００１６】従って、従来の光半導体装置においては、
使用する光ファイバの種類や径等によって空乏層外で生
成された電子・正孔対による拡散電流のために応答波形
になまりがみられたが、本実施例に係る光半導体装置に
よると、最大入射角の大きい光ファイバを用いても拡散
電流成分をほとんど抑制でき、応答波形になまりがみら
れない。Therefore, in the conventional optical semiconductor device,
The response waveform was rounded due to the diffusion current due to the electron-hole pairs generated outside the depletion layer depending on the type and diameter of the optical fiber used, but according to the optical semiconductor device of this example, the maximum Even if an optical fiber with a large incident angle is used, the diffusion current component can be almost suppressed, and the response waveform shows no rounding.
【００１７】なお、製造する際、光ファイバの種類や径
を最大限考慮した上で遮光層形状、および、受光部形状
を決定することにより、応答波形になまりが無い光半導
体装置を提供できる。When manufacturing, the shape of the light-shielding layer and the shape of the light-receiving portion are determined in consideration of the type and the diameter of the optical fiber to the utmost, so that an optical semiconductor device having no response waveform can be provided.
【００１８】[0018]
【発明の効果】以上説明したように、本発明に係る光半
導体装置によると、高抵抗半導体領域の上面に形成され
た受光部周囲に、略全面に亘って非透過性材料より形成
された遮光層を受光部周囲に対して、幅ｄ・ｔａｎ〔ｓ
ｉｎ~1（１／ｎ）〕（ｄ：高抵抗半導体領域厚み、ｎ：
高抵抗半導体領域材料屈折率）以上オーバラップして形
成したため、光ファイバの種類や径等が異なっても周辺
からの入射光は空乏層内で取り込まれ、拡散電流の原因
となる周辺光の影響を最小限に抑制できる。As described above, according to the optical semiconductor device of the present invention, the light-shielding member formed on the upper surface of the high-resistance semiconductor region is substantially entirely covered with the non-transmissive material. The layer has a width d · tan [s
in ~ 1 (1 / n)] (d: thickness of high resistance semiconductor region, n:
High-resistance semiconductor region material refractive index) Overlapping, incident light from the surroundings is captured in the depletion layer even if the type and diameter of optical fiber are different, and the influence of ambient light that causes diffusion current Can be minimized.
【００１９】このため、本発明によると、応答波形にな
まりがなく高速応答が可能な光通信に用いることができ
る光半導体装置を従来のプロセスによって容易に提供す
ることができる。Therefore, according to the present invention, it is possible to easily provide an optical semiconductor device which can be used for optical communication in which the response waveform is not rounded and which enables high-speed response, by the conventional process.
【図１】本発明の一実施例に係る光半導体装置としての
受光素子の断面図である。FIG. 1 is a sectional view of a light receiving element as an optical semiconductor device according to an embodiment of the present invention.
【図２】図１に示す受光素子の平面図である。FIG. 2 is a plan view of the light receiving element shown in FIG.
【図３】従来の光半導体装置としての受光素子の断面図
である。FIG. 3 is a sectional view of a light receiving element as a conventional optical semiconductor device.
【図４】図３に示す受光素子の平面図である。FIG. 4 is a plan view of the light receiving element shown in FIG.
１…Ｎ型の半導体シリコン基板、 ２…Ｎ型の高抵抗半
導体領域、 ３…受光部、 ４…遮光層、 ５…カソー
ド電極部、 ６…空乏層。DESCRIPTION OF SYMBOLS 1 ... N-type semiconductor silicon substrate, 2 ... N-type high resistance semiconductor region, 3 ... Light receiving part, 4 ... Light-shielding layer, 5 ... Cathode electrode part, 6 ... Depletion layer.
Claims (1)
導電型の高抵抗半導体領域が形成され、該高抵抗半導体
領域内に第２導電型の半導体領域よりなる受光部が形成
され、前記高抵抗半導体領域の上面における前記受光部
周囲には、略全面に亘って非透過性材料よりなる遮光層
が形成された光半導体装置において、前記遮光層が前記
受光部周囲に対して、幅ｄ・ｔａｎ〔ｓｉｎ~1（１／
ｎ）〕（ｄ：高抵抗半導体領域厚み、ｎ：高抵抗半導体
領域材料屈折率）以上オーバラップして形成されている
ことを特徴とする光半導体装置。1. A first conductive type low resistance semiconductor substrate having a first
A conductive type high resistance semiconductor region is formed, a light receiving portion made of a second conductive type semiconductor region is formed in the high resistance semiconductor region, and the light receiving portion on the upper surface of the high resistance semiconductor region is substantially entirely covered. In an optical semiconductor device in which a light-shielding layer made of a non-transmissive material is formed over the entire length, the light-shielding layer has a width d · tan [sin to 1 (1 /
n)] (d: thickness of high-resistance semiconductor region, n: refractive index of high-resistance semiconductor region material) or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4291366A JPH06140659A (en) | 1992-10-29 | 1992-10-29 | Optical semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4291366A JPH06140659A (en) | 1992-10-29 | 1992-10-29 | Optical semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06140659A true JPH06140659A (en) | 1994-05-20 |
Family
ID=17767992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4291366A Pending JPH06140659A (en) | 1992-10-29 | 1992-10-29 | Optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06140659A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002141419A (en) * | 2000-11-06 | 2002-05-17 | Texas Instr Japan Ltd | Semiconductor device |
| JP2015053415A (en) * | 2013-09-09 | 2015-03-19 | 株式会社東芝 | Photodiode |
-
1992
- 1992-10-29 JP JP4291366A patent/JPH06140659A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002141419A (en) * | 2000-11-06 | 2002-05-17 | Texas Instr Japan Ltd | Semiconductor device |
| JP2015053415A (en) * | 2013-09-09 | 2015-03-19 | 株式会社東芝 | Photodiode |
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