JPH0613376A - Integrated circuit device of semiconductor - Google Patents

Abstract

PURPOSE:To prevent short-circuiting between an upper metal wiring layer and a lower metal wiring layer at the cracked section of an insulating film. CONSTITUTION:The thermal deformation amount of the title device is controlled to be as little as possible by providing slots 11a, 12a on metal wiring layers 11, 12 at the cross section where an upper layer and a lower layer are overlapped, and by reducing the wiring width. As a result, the force for generating cracks on an insulating film 13 prevents more force from being applied to the metal wiring layers 11, 12.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit device having multiple metal wiring layers, and more particularly to the structure of metal wiring layers.

[0002]

2. Description of the Related Art Generally, a semiconductor integrated circuit device has a well (formation of P / N isolation of a substrate), a diffusion layer (formation of source / drain of a transistor), a gate poly (formation of gate of a transistor), and a silicon substrate. A contact (a hole formed in an insulating film for connecting each layer), a metal wiring layer (wiring pattern), and the like are formed. Further, an insulating film is formed between the upper and lower layers so that the layers do not come into contact with each other.

Further, in recent semiconductor integrated circuit devices, the metal wiring layer has become a multi-layered structure, and since the metal wiring layer is excellent in characteristics, as shown in FIG. 12 can now be overlapped vertically and crossed. Further, semiconductor integrated circuit devices have been increasing in capacity and diversifying, and metal wiring layers of several tens μm to several hundreds μm are required.

Each layer constituting this semiconductor integrated circuit device causes expansion and contraction due to temperature change. In particular, the metal wiring layer has a lower temperature at which expansion / contraction changes occur, as compared with the layers other than the metal wiring layer. In a portion where a thicker metal wiring layer is used, the amount of change is large.

On the other hand, it is difficult to reduce the temperature change in the process of diffusing and selecting the semiconductor integrated circuit device.

[0006]

In the semiconductor integrated circuit device described above, the metal wiring layer having a multi-layer structure has a thickness of several tens to several hundreds of μm.
When the metal wiring layer is formed to have a large thickness, there is a problem that the shape of the wiring layer is deformed because the amount of change due to temperature change of the metal wiring layer is large.

Further, when the thick metal wiring layers intersect, not only the metal wiring layers are deformed, but also the temperature change amount of the insulating film sandwiched between the metal wiring layers above and below is small,
A crack is generated in the insulating film due to the force applied to the insulating film as the upper and lower metal wiring layers change. Further, there is a problem in that the metal wiring layers enter into the cracks, so that the upper and lower metal wiring layers come into contact (short).

An object of the present invention is to provide a semiconductor integrated circuit device in which the thermal change of the metal wiring layer is suppressed to a small level.

[0009]

In order to achieve the above-mentioned object, a semiconductor integrated circuit device according to the present invention is a semiconductor integrated circuit device having a metal wiring layer, and the metal wiring layer is relatively disposed with an insulating film interposed therebetween. It has a multi-layer structure formed by vertically stacking, and the metal wiring layer at the portion where it overlaps and intersects vertically is divided into a plurality along the length direction, the wiring width is reduced, The amount of deformation is kept small.

[0010]

By reducing the wiring width of the metal wiring layer at the portions which are vertically overlapped and intersect with each other, the amount of deformation due to thermal change is suppressed to a small amount. As a result, an unreasonable force is not applied to the insulating film between the metal wiring layers, and the occurrence of cracks can be prevented.

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings.

(Embodiment 1) FIG. 1A is a plan view showing Embodiment 1 of the present invention, and FIG. 1B is an A- line in FIG. 1A.
It is an A'line sectional view.

In the figure, metal wiring layers 11 and 12 have a multi-layered structure formed on a substrate 14 with an insulating film 13 interposed therebetween so as to be laminated one above the other.

Metal wiring layers 1 provided relatively above and below
Of the metal wiring layers 1 and 12, the metal wiring layers 11 and 12 at the portions that vertically overlap each other intersect with each other.
a is provided and divided into a plurality.

The slits 11a and 12a are formed by reducing the wiring width L _{1 of one} metal wiring layer 11 and 12 having the wiring width L.
Is divided into a plurality of wiring portions 11b and 12b having
By providing the slits 11a and 12a, the deformation amount due to thermal change is suppressed to be small. In the embodiment, the divided wiring width L ₁ is 15 μm or less.

Therefore, according to the present invention, when the upper and lower metal wiring layers 11 and 12 intersect with each other, the amount of deformation of the metal wiring layers 11 and 12 at the intersecting points becomes small, so that the upper and lower metal wiring layers 11 and 12 are metalized. Insulating film 1 sandwiched between wiring layers 11 and 12
The force applied to the metal wiring layer 3 is suppressed to a small level, and the metal wiring layer 11,
The generation of cracks in the insulating film 13 due to thermal deformation of 12 can be eliminated. As a result, it is possible to prevent an accident that the upper and lower metal wiring layers are short-circuited through the cracked portion of the insulating film 13.

(Second Embodiment) FIG. 2 is a plan view showing a second embodiment of the present invention.

In this embodiment, the slit 11a is provided only in the lower metal wiring layer 11 which overlaps and intersects. With this configuration, similarly to the first embodiment, the upper and lower metal wiring layers 1 are formed.
It is possible to prevent the occurrence of cracks in the insulating layer 13 sandwiched between 1 and 12.

[0019]

As described above, according to the present invention, since the amount of thermal deformation of the metal wiring layers in the vertically overlapping and intersecting portions is reduced, the size of cracks in the insulating film sandwiched between the metal wiring layers at the top and bottom is generated. Force is not applied from the metal wiring layer,
It is possible to prevent cracking of the insulating film. Thereby, it is possible to prevent a short circuit between the upper and lower metal wiring layers through the cracked portion of the insulating film.

[Brief description of drawings]

FIG. 1A is a plan view showing a first embodiment of the present invention,
(B) is a sectional view taken along the line AA ′ of (a).

FIG. 2 is a plan view showing a second embodiment of the present invention.

FIG. 3 is a plan view showing a conventional example.

[Explanation of symbols]

 11, 12 Metal wiring layer 13 Insulating film 14 Substrate

Claims (1)

[Claims] 1. A semiconductor integrated circuit device having a metal wiring layer, wherein the metal wiring layer has a multi-layered structure which is formed by relatively stacking the metal wiring layer vertically with an insulating film interposed therebetween. A semiconductor integrated circuit device characterized in that the metal wiring layer in the above portion is divided into a plurality along the length direction, the wiring width is reduced, and the amount of deformation due to thermal change is suppressed small.