JPH06118034A - Total reflection type fluorescent X-ray analysis method and analyzer - Google Patents
Total reflection type fluorescent X-ray analysis method and analyzerInfo
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- JPH06118034A JPH06118034A JP2347991A JP2347991A JPH06118034A JP H06118034 A JPH06118034 A JP H06118034A JP 2347991 A JP2347991 A JP 2347991A JP 2347991 A JP2347991 A JP 2347991A JP H06118034 A JPH06118034 A JP H06118034A
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- total reflection
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Abstract
(57)【要約】
【目的】従来と同等の出力のX線源を用いても、X線分
光光学系を改良することにより試料に照射されるX線の
強度を実質的に増大し、検出感度の高い全反射型蛍光X
線分析方法及び装置を実現する。
【構成】試料に照射するX線ビ−ムを複数個準備すると
共に、これら各々のX線ビ−ムをX線モノクロメ−タ−
を用いて単色化し、これらを試料上で交差させて照射す
る。具体的なX線照射増大法としては、X線源2で発生
したX線を複数の取り出し口から透過窓4を通して複数
個取り出し、これらX線ビ−ムをスリット5を通して、
湾曲型分光結晶6に入射させる。この分光結晶6の凹面
部で回折されたX線ビ−ム3は、波長λのみからなるX
線ビ−ム7となり、スリット8を通して収束点9に向か
う。収束点9を通過した後、X線ビ−ム7と同様な経路
を通過してきたもう一方のX線ビ−ム10と交差し、こ
の交差部分のX線強度を実質的に増大する。
(57) [Abstract] [Purpose] Even if an X-ray source with an output equivalent to that of the conventional one is used, the intensity of X-rays irradiated on the sample can be substantially increased and detected by improving the X-ray spectroscopic optical system. Total reflection type fluorescent X with high sensitivity
A line analysis method and apparatus are realized. [Structure] A plurality of X-ray beams for irradiating a sample are prepared, and each X-ray beam is irradiated with an X-ray monochromator.
Are used for monochromatization, and these are crossed on the sample and irradiated. As a concrete X-ray irradiation increasing method, a plurality of X-rays generated by the X-ray source 2 are taken out from a plurality of taking-out ports through a transmission window 4, and these X-ray beams are made to pass through a slit 5.
It is incident on the curved dispersive crystal 6. The X-ray beam 3 diffracted by the concave portion of the dispersive crystal 6 is an X-ray having only the wavelength λ.
It becomes a line beam 7 and goes toward a convergence point 9 through a slit 8. After passing through the converging point 9, it intersects with the other X-ray beam 10 that has passed through the same route as the X-ray beam 7, and the X-ray intensity at this intersection is substantially increased.
Description
【0001】[0001]
【産業上の利用分野】本発明は、全反射型蛍光X線分析
方法及び分析装置に係り、特にX線光学系の改良に関
し、試料表面にある微量な物質の検出を高感度で行なう
のに好適な全反射型蛍光X線分析方法及び分析装置に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a total reflection type fluorescent X-ray analysis method and analyzer, and more particularly to improvement of an X-ray optical system, for detecting a trace amount of a substance on a sample surface with high sensitivity. The present invention relates to a preferable total reflection type fluorescent X-ray analysis method and analyzer.
【0002】[0002]
【従来の技術】全反射型蛍光X線分析装置は、X線源、
モノクロメ−タ、蛍光X線検出器、試料測定条件設定機
構、これらを取付けるための真空容器及び真空排気装置
と装置全体の動作制御とデ−タ処理をする制御装置とか
ら構成される。全反射型蛍光X線超微量分析の感度性能
は、主に試料を照射するX線ビ−ム強度の向上と試料か
ら発生するX線の散乱量の抑制で決定される。従来の装
置では例えば「X線分析の進歩」19,p237−24
9(1988)にあるように、X線源からのビ−ムをコ
リメ−タを通して直接試料に入射するか、あるいは「日
本結晶学会誌」27,p61−72(1985)にある
ように、X線源からのビ−ムを平板結晶で分光し、X線
ビ−ムの電気ベクトルを試料表面と並行の条件で試料に
入射していた。この条件で試料表面から数mm離れた位
置に蛍光X線検出器を設置し試料表面から放出される蛍
光X線を測定し、微量な物質の元素の同定及び存在量の
定量分析を行なっていた。2. Description of the Related Art A total reflection type fluorescent X-ray analyzer is an X-ray source,
It is composed of a monochrome meter, a fluorescent X-ray detector, a sample measurement condition setting mechanism, a vacuum container for attaching them, a vacuum exhaust device, and a control device for controlling the operation of the entire device and processing the data. The sensitivity performance of the total reflection type fluorescent X-ray ultratrace analysis is mainly determined by improving the intensity of the X-ray beam irradiating the sample and suppressing the amount of scattering of the X-ray generated from the sample. In the conventional apparatus, for example, "Advances in X-ray analysis" 19, p237-24.
9 (1988), a beam from an X-ray source is directly incident on a sample through a collimator, or X-ray is detected as described in "Journal of the Crystal Society of Japan" 27, p 61-72 (1985). The beam from the radiation source was separated by a flat plate crystal, and the electric vector of the X-ray beam was incident on the sample under the condition parallel to the sample surface. Under this condition, a fluorescent X-ray detector was installed at a position several mm away from the sample surface, the fluorescent X-rays emitted from the sample surface were measured, and the element of a trace substance was identified and the abundance was quantitatively analyzed. .
【0003】このような分析方法及び装置構成では、超
微量分析の感度を上昇させるための手段として、X線源
に大形の回転陽極型を用いるか、あるいはシンクロトロ
ン放射光を用い、試料に入射するX線ビ−ムの強度を大
きくとる以外には方法がなかった。ところが、このよう
な方法を用いると必然的にX線源から試料までの距離が
長くなり、大形のX線源を用いても線源の能力増加が結
果的に照射X線ビ−ムの強度増加に充分反映されない。
また、試料表面での散乱X線量が増加することによる蛍
光X線検出器の飽和時間増加による検出効率の低下があ
り、充分な感度上昇にはつながらないという欠点があっ
た。In such an analysis method and apparatus configuration, as a means for increasing the sensitivity of ultratrace analysis, a large rotating anode type X-ray source or synchrotron radiation is used for a sample. There was no other way than to increase the intensity of the incident X-ray beam. However, when such a method is used, the distance from the X-ray source to the sample is inevitably long, and even if a large-sized X-ray source is used, the capacity of the radiation source is increased, resulting in the irradiation X-ray beam. Not sufficiently reflected in strength increase.
Further, there is a drawback in that the detection efficiency is reduced due to the increase in the saturation time of the fluorescent X-ray detector due to the increase in the scattered X-ray amount on the sample surface, which does not lead to a sufficient increase in sensitivity.
【0004】[0004]
【発明が解決しようとする課題】したがって、本発明の
目的は上記従来の問題点を解消することにあり、その第
1の目的は、従来と同等な出力のX線源を用いた場合で
も、X線の分光光学系を改良し、試料に入射するX線ビ
−ムの強度を実質的に従来より増大すると共に、X線ビ
−ムの電気ベクトルを試料表面に垂直な成分を支配的に
することにより、試料表面での散乱X線強度を抑制し、
従来技術より超微量分析の感度を上昇させることのでき
る改良された全反射型蛍光X線分析方法を提供すること
にあり、第2の目的は、その分析装置を提供することに
ある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to solve the above-mentioned problems of the prior art, and the first object thereof is to use an X-ray source having an output equivalent to that of the prior art. The X-ray spectroscopic optical system was improved to substantially increase the intensity of the X-ray beam incident on the sample as compared with the conventional one, and the electric vector of the X-ray beam was dominated by the component perpendicular to the sample surface. By suppressing the scattered X-ray intensity on the sample surface,
It is an object of the present invention to provide an improved total reflection type X-ray fluorescence analysis method capable of increasing the sensitivity of ultratrace analysis as compared with the prior art, and a second object thereof is to provide an analyzer thereof.
【0005】[0005]
【課題を解決するための手段】本発明では、試料に照射
するX線ビ−ム系として複数のX線ビ−ムが試料の分析
位置で交差するような照射光学系とすることにより、試
料に入射するX線ビ−ムの強度を実質的に増大させ上記
目的を達成するものである。さらにまた、本発明では、
モノクロメ−タ−としてX線源から放射されるX線ビ−
ムを単色化し、しかも集光可能な湾曲型分光結晶を用
い、単色化を行なう際の回折現象で定まる偏光選択性を
利用して、X線ビ−ムの電気ベクトルを試料表面に垂直
な成分を支配的にすることにより、試料表面での散乱X
線強度を抑制し、超微量分析の感度を上昇させるもので
ある。なお、複数のX線ビ−ムを取り出す手段として
は、同一のX線源にそれぞれ異なる複数個の取り出し口
を設けて取り出すようにしてもよいし、予めそれぞれ独
立の異なるX線源を設けて、複数個のX線ビ−ムを取り
出すようにしてもよい。According to the present invention, an X-ray beam system for irradiating a sample is provided with an irradiation optical system in which a plurality of X-ray beams intersect at an analysis position of the sample. The above-mentioned object is achieved by substantially increasing the intensity of the X-ray beam incident on the. Furthermore, in the present invention,
X-ray beam emitted from an X-ray source as a monochrome meter
By using a curved dispersive crystal capable of monochromating the beam and collecting light, and utilizing the polarization selectivity determined by the diffraction phenomenon when monochromating, the electric vector of the X-ray beam is a component perpendicular to the sample surface. Scattering on the sample surface by controlling
It suppresses the line intensity and increases the sensitivity of ultratrace analysis. As a means for extracting a plurality of X-ray beams, the same X-ray source may be provided with a plurality of different outlets, or different X-ray sources may be provided in advance. Alternatively, a plurality of X-ray beams may be taken out.
【0006】[0006]
【作用】本発明の試料に照射するX線光学系は、同一の
X線源の複数個のX線取り出し口から得られる、もしく
は予めそれぞれ独立に設けられた複数個の異なるX線源
から得られるX線ビ−ムを、X線モノクロメ−タ−を用
いて単色化させた上、試料上で交差させ、この交差部分
のX線強度を大きくとることで、交差させたX線ビ−ム
の数だけ試料へのX線照射強度を大きくすることがで
き、その結果として分析感度を上昇させることができ
る。また、X線源から取り出したX線ビ−ムを単色化
し、かつ集光する湾曲型モノクロメ−タ−を使用するこ
とで、X線ビ−ムの電気ベクトルが試料表面の垂直方向
成分を最大とするような光学系を構成することができ、
蛍光X線検出器に入射する試料からの散乱X線量を減少
させ、分析感度を上昇させることができる。The X-ray optical system for irradiating the sample of the present invention can be obtained from a plurality of X-ray extraction ports of the same X-ray source, or can be obtained from a plurality of different X-ray sources which are independently provided in advance. The X-ray beam to be crossed is made monochromatic by using an X-ray monochromator and then crossed on the sample, and the X-ray intensity at this crossing portion is increased to thereby cross the X-ray beam. It is possible to increase the X-ray irradiation intensity on the sample by the number of 10 times, and as a result, increase the analysis sensitivity. In addition, by using a curved type monochromator that monochromatically collects the X-ray beam extracted from the X-ray source, the electric vector of the X-ray beam maximizes the vertical component of the sample surface. It is possible to configure an optical system such as
The scattered X-ray dose from the sample incident on the X-ray fluorescence detector can be reduced and the analytical sensitivity can be increased.
【0007】本発明の全反射型蛍光X線分析装置におい
て、X線ビ−ムの行路を真空容器内に設置し、X線源の
位置、モノクロメ−タ−の位置及び試料の位置を真空容
器外部から移動制御できるような制御機構を備えたこと
により、外部からの光学系の調整が容易となる。また、
試料表面を照射するX線ビ−ムの位置と蛍光X線検出器
に対し試料位置を真空容器外部から水平あるいは回転移
動できるような制御機構を備えたことにより、大面積試
料の面分析が高感度で行なえる。In the total reflection type X-ray fluorescence analyzer of the present invention, the path of the X-ray beam is installed in the vacuum container, and the position of the X-ray source, the position of the monochrome meter and the position of the sample are set in the vacuum container. By providing the control mechanism capable of controlling the movement from the outside, it becomes easy to adjust the optical system from the outside. Also,
Since the position of the X-ray beam that irradiates the sample surface and the fluorescent X-ray detector are equipped with a control mechanism that allows the sample position to be moved horizontally or rotationally from outside the vacuum container, the surface analysis of a large-area sample can be highly performed. It can be done with sensitivity.
【0008】[0008]
【実施例】以下、本発明の一実施例を図面により具体的
に説明する。 (1)原理説明 図1及び図2は、本発明の原理説明図を示したもので、
以下これらに従って説明する。図1において、1はX線
発生装置、2は実際にX線を発生するX線源である。X
線源2で発生したX線ビ−ム3はX線発生装置1とその
外部とを真空遮断するX線透過窓4及び不要なX線を遮
断するためのスリット5を通して、X線源2を中心とし
て発散的に湾曲型分光結晶6に入射する。なお、X線ビ
−ム3の取り出し窓となるX線透過窓4は、図示のよう
に2ヵ所に設けられ2本のX線ビ−ムが取り出せるよう
に構成されている。ここで湾曲型分光結晶6の凹面部に
入射したX線ビ−ム3は、湾曲型分光結晶6で回折さ
れ、単色化されて波長λのみからなるX線ビ−ム7とな
り、分光結晶等から発生する蛍光X線を抑制するスリッ
ト8を通して収束点9に向かう。収束点9を通過した
後、X線ビ−ム7と同様な経路を通過してきたもう一方
のX線ビ−ム10と交差し、この交差部分のX線強度を
大きくとることができる。そして試料は、図示されてい
ないがこの交差部分を含む位置に設置される。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be specifically described below with reference to the drawings. (1) Description of principle FIGS. 1 and 2 are explanatory views of the principle of the present invention.
The following is a description according to these. In FIG. 1, 1 is an X-ray generator, and 2 is an X-ray source that actually generates X-rays. X
The X-ray beam 3 generated by the X-ray source 2 passes through the X-ray transmission window 4 for vacuum-blocking the X-ray generator 1 and the outside thereof, and the slit 5 for blocking unnecessary X-rays. The light is incident on the curved dispersive crystal 6 divergently as the center. The X-ray transmission window 4 serving as a window for taking out the X-ray beam 3 is provided at two places as shown in the figure so that two X-ray beams can be taken out. Here, the X-ray beam 3 incident on the concave surface portion of the curved dispersive crystal 6 is diffracted by the curved dispersive crystal 6 and becomes a monochromatic X-ray beam 7 having only the wavelength λ. To the convergence point 9 through the slit 8 that suppresses the fluorescent X-rays generated from the. After passing through the convergence point 9, it intersects with the other X-ray beam 10 that has passed through the same route as the X-ray beam 7, and the X-ray intensity at this intersection can be increased. Then, the sample is set at a position including this intersection, which is not shown.
【0009】本実施例では1つのX線源2から得られる
2本のX線ビ−ムを使用する例を示したが、それぞれ独
立に設けられた複数のX線源から放出されたX線ビ−ム
がそれぞれのX線光学系を経て交差する構成としても同
様に交差部分のX線強度を大きくとることができる。次
に、図2を用いて、湾曲型分光結晶によるX線の分光と
収束について説明する。X線源2から発散的に放射され
たX線ビ−ムは湾曲型分光結晶6の凹面部に入射する。
湾曲型分光結晶6は厚さ方向の原子面の周期dをもつ単
結晶を半径2Rで弾性変形させた後半径Rで内面を切削
したものである。このようにX線の回折に関与する原子
面を円筒面とすると、湾曲型分光結晶6の円筒面内面に
対してX線源2の1点から放出されるX線で円筒面の内
面全面で次式1に示すブラッグの法則が満足される幾何
学的条件が成立する光路を通り、収束点9に到達する。In this embodiment, an example of using two X-ray beams obtained from one X-ray source 2 is shown, but X-rays emitted from a plurality of X-ray sources independently provided. Even if the beam intersects the respective X-ray optical systems, the X-ray intensity at the intersecting portion can be increased similarly. Next, with reference to FIG. 2, X-ray spectroscopy and focusing by the curved dispersive crystal will be described. The X-ray beam divergently emitted from the X-ray source 2 is incident on the concave surface portion of the curved dispersive crystal 6.
The curved dispersive crystal 6 is formed by elastically deforming a single crystal having an atomic plane period d in the thickness direction with a radius 2R and then cutting the inner surface with the radius R. When the atomic planes involved in the X-ray diffraction are cylindrical surfaces in this manner, the X-rays emitted from one point of the X-ray source 2 with respect to the inner cylindrical surface of the curved dispersive crystal 6 are used for the entire inner surface of the cylindrical surface. A convergence point 9 is reached through an optical path satisfying a geometric condition that satisfies the Bragg's law shown in the following Expression 1.
【0010】[0010]
【数1】2d・sinθ=n・λ ……(1) ここで、θは回折角を意味し、波長λは試料を照射する
X線の波長であり、nは回折の次数である。このとき、
X線源2、湾曲型分光結晶6及び収束点9の幾何学的関
係は図2に示すようになり半径Rの円周上に位置する。
ここで、湾曲型分光結晶6がX線源2及び収束点9に張
る角度φは、湾曲型分光結晶6の円周上の弧の長さΛと
すると次式2のような関係になる。## EQU1 ## 2d.sin .theta. = N..lamda. (1) where .theta. Means the diffraction angle, wavelength .lamda. Is the wavelength of the X-ray irradiating the sample, and n is the diffraction order. At this time,
The X-ray source 2, the curved dispersive crystal 6, and the convergence point 9 have a geometrical relationship as shown in FIG.
Here, when the angle φ that the curved dispersive crystal 6 extends between the X-ray source 2 and the convergence point 9 is the arc length Λ on the circumference of the curved dispersive crystal 6, the following relationship 2 is established.
【0011】[0011]
【数2】φ(ラジアン)=Λ/4R ……(2) 本実施例では、湾曲型分光結晶6をNi単結晶で構成
し、弧の長さΛを100mm、半径Rを200mmとし
て、X線源2が発生するX線ビ−ムの1/8ラジアンを
分光収束し、2つの光学系(X線ビ−ム3、10)を使
用することにより平面内2πラジアンに発散するビ−ム
のうち1/4ラジアンを試料位置に分光収束する。X線
源2が発生するX線ビ−ムは特性X線の他、波長が連続
的な制動輻射によるX線も含まれるが、スリット8を通
して分光収束光学系を通過させることにより、式1で選
択される波長λのみが図示されていない試料に照射され
る。## EQU00002 ## .phi. (Radian) =. LAMBDA./4R (2) In the present embodiment, the curved dispersive crystal 6 is made of Ni single crystal, and the arc length .LAMBDA. Is 100 mm and the radius R is 200 mm, and X A beam diverging to 1π radian in the plane by spectrally converging 1/8 radian of the X-ray beam generated by the radiation source 2 and using two optical systems (X-ray beams 3 and 10). Of this, 1/4 radian is spectrally converged at the sample position. The X-ray beam generated by the X-ray source 2 includes not only characteristic X-rays but also X-rays due to bremsstrahlung having a continuous wavelength. However, by passing through the spectral focusing optical system through the slit 8, Only the selected wavelength λ is applied to the sample (not shown).
【0012】今、ここで使用する試料に照射するX線の
波長をAuのLα線(λ=0.12764nm)とし、
湾曲型分光結晶の原子面をNi単結晶の<311>とす
ると周期はd=0.10624nmであるから、式1に
より回折角はθ=36.921°となる。X線源2から
放射されるX線ビ−ムは偏光性が無いが、分光結晶6で
回折されると、回折に関与する原子面に垂直な方向の電
気ベクトルの成分は減少する。この偏光性を含めた回折
後のX線強度は次式3で表され偏光因子pと呼ばれる。Now, the wavelength of the X-rays irradiated to the sample used here is Lα ray of Au (λ = 0.12764 nm),
Assuming that the atomic plane of the curved dispersive crystal is <311> of Ni single crystal, the period is d = 0.10624 nm, and therefore the diffraction angle is θ = 36.921 ° according to Equation 1. The X-ray beam emitted from the X-ray source 2 is not polarizable, but when it is diffracted by the dispersive crystal 6, the component of the electric vector in the direction perpendicular to the atomic plane involved in the diffraction is reduced. The X-ray intensity after diffraction including this polarization property is represented by the following expression 3 and is called a polarization factor p.
【数3】p=(1+cos2θ)/2 ……(3)[Equation 3] p = (1 + cos2θ) / 2 (3)
【0013】本実施例によれば、回折角θから原子面に
垂直な方向の電気ベクトルの成分は全X線強度の25%
程度まで減少する。この値は、偏光性を考慮しないX線
光学系を使用した場合の1/3程度となる。これによ
り、試料面に垂直な方向の電気ベクトルが増し、水平な
方向の電気ベクトルが減少し、試料表面での入射X線ビ
−ムの散乱強度を小さく抑制することができる。本実施
例では、X線をAuLα線としたが、X線はFe,C
o,Cu,Mo,AgのKα線あるいはKβ線,又はT
a,W,Re,Os,Ir,PtのLα線あるいはLβ
線等でも同様な効果が得られる。同様に、湾曲型分光結
晶6はNi単結晶としたが、その他、例えばCu,S
i,Ge,SiO2,LiF等の単結晶を使用すること
が可能である。According to this embodiment, the component of the electric vector in the direction perpendicular to the atomic plane from the diffraction angle θ is 25% of the total X-ray intensity.
Decrease to a degree. This value is about ⅓ of that when an X-ray optical system that does not consider the polarization property is used. As a result, the electric vector in the direction perpendicular to the sample surface increases, the electric vector in the horizontal direction decreases, and the scattering intensity of the incident X-ray beam on the sample surface can be suppressed small. In this embodiment, the X-ray is AuLα ray, but the X-ray is Fe, C.
Kα ray or Kβ ray of o, Cu, Mo, Ag, or T
Lα ray or Lβ of a, W, Re, Os, Ir, Pt
Similar effects can be obtained with lines and the like. Similarly, the curved dispersive crystal 6 is made of Ni single crystal, but other than that, for example, Cu, S
It is possible to use a single crystal of i, Ge, SiO 2 , LiF or the like.
【0014】(2)X線発生装置の説明 (2)−1 回転陽極部について 次に本実施例に用いたX線発生装置1の回転陽極部につ
いて、図3に示した縦断正面図により説明する。冷媒1
4の流路を設けた二重中空回転軸15を有する回転陽極
16は電子ビ−ム照射面17の裏側の部分で充分な冷媒
の流速が得られるよう仕切板18が設けられている。こ
の回転陽極16は、所望のX線が得られる金属単体ある
いは、熱伝導性能の高い下地金属の表面に所望のX線が
得られる金属膜を施した積層体で構成された円筒形状を
成している。ハウジング19のフランジ20より回転陽
極側は高真空中に設置されるため、回転真空シ−ル21
により高真空と大気とを隔絶する。二重中空回転軸15
を保持する軸受22は、軸受取付け枠23に内設され回
転真空シ−ル21の近傍位置に設置する。(2) Description of X-Ray Generator (2) -1 Rotating Anode Part Next, the rotating anode part of the X-ray generator 1 used in this embodiment will be explained with reference to the vertical sectional front view shown in FIG. To do. Refrigerant 1
The rotating anode 16 having the double hollow rotating shaft 15 having the four flow channels is provided with a partition plate 18 at the portion on the back side of the electron beam irradiation surface 17 so that a sufficient flow rate of the refrigerant can be obtained. The rotating anode 16 has a cylindrical shape composed of a single metal that can obtain desired X-rays or a laminated body in which a metal film that obtains desired X-rays is provided on the surface of a base metal having high heat conductivity. ing. Since the rotary anode side of the flange 19 of the housing 19 is installed in a high vacuum, the rotary vacuum seal 21
Isolates the high vacuum from the atmosphere. Double hollow rotating shaft 15
The bearing 22 for holding is installed in the bearing mounting frame 23 in the vicinity of the rotary vacuum seal 21.
【0015】電動機の回転子24は二重中空回転軸15
の中央部付近に直接固定される。電動機の固定子25は
回転子24を取り囲むようにハウジング19の内側に設
置される。回転電極26は回転陽極16で捕らえた電子
ビ−ムの電流が、ブラシ27及びブラシ抑え用バネ及び
ネジ28及びハウジング19を通して図3には記載して
ない電子ビ−ム用高電圧電源の接地電位側に接続される
よう設置されたものである。The rotor 24 of the electric motor is a double hollow rotary shaft 15
It is fixed directly near the center of the. The stator 25 of the electric motor is installed inside the housing 19 so as to surround the rotor 24. In the rotating electrode 26, the current of the electron beam captured by the rotating anode 16 is passed through the brush 27, the brush holding spring and screw 28, and the housing 19 to ground the high voltage power source for the electron beam which is not shown in FIG. It is installed so as to be connected to the potential side.
【0016】軸受22と対を成す軸受29は軸受取付け
枠30に内設される。冷媒回転シ−ル31及び32は、
それぞれ、冷媒出口マウント33及び冷媒入口マウント
34に内設され、冷媒が漏洩することを防ぐ。冷媒外部
放出用円板35は、冷媒回転シ−ル31が損傷して二重
中空回転軸15の外周に沿って漏洩が生じたとき、回転
により、冷媒をハウジング19の外部に放出するための
安全機構である。更に、冷媒外部放出用円板35には、
永久磁石小片36が設置され、回転検出機構37によ
り、回転陽極16の回転の状態が把握できるようになっ
ており、回転速度が低いときあるいは、事故により回転
が不能になったとき、回転陽極16への電子ビ−ム照射
を遮断できるようになっている。A bearing 29, which makes a pair with the bearing 22, is provided inside a bearing mounting frame 30. The refrigerant rotation seals 31 and 32 are
They are respectively installed in the coolant outlet mount 33 and the coolant inlet mount 34 to prevent the coolant from leaking. The refrigerant external discharge disk 35 is for rotating and discharging the refrigerant to the outside of the housing 19 when the refrigerant rotary seal 31 is damaged and leaks along the outer periphery of the double hollow rotary shaft 15. It is a safety mechanism. Further, the cooling medium external discharge disk 35 has
The permanent magnet piece 36 is installed, and the rotation detection mechanism 37 can grasp the rotation state of the rotating anode 16. When the rotating speed is low or the rotating anode 16 cannot be rotated due to an accident, the rotating anode 16 is rotated. It is possible to block the electron beam irradiation to the.
【0017】陽極16への電子ビ−ム照射可能最大電力
Gは、陽極材料の融点をTm、熱伝導率をg、比熱を
C、回転陽極直径をD、回転速度をNとすると次式4の
ように表わされる。The maximum electric power G that can irradiate the anode 16 with an electron beam is given by the following equation 4 where Tm is the melting point of the anode material, g is the thermal conductivity, C is the specific heat, D is the rotating anode diameter, and N is the rotating speed. It is expressed as.
【数4】 ここで、aは比例係数を意味する。式4の定数のうち、
Tm、g、Cは陽極材料を決めると一義的に決定される
ものであり、装置設計上で決定できるものはNおよびD
である。[Equation 4] Here, a means a proportional coefficient. Of the constants in Equation 4,
Tm, g and C are uniquely determined when the anode material is determined, and N and D can be determined in the device design.
Is.
【0018】ここで、陽極直径Dを大きくとるとX線発
生管が大形となる。従来装置では、プ−リ−等の回転駆
動機構を介して回転陽極を駆動していたため、振動等の
問題から充分な回転速度が得られず、陽極の直径を大き
くして電子ビ−ム照射電力Gを大きくとるようにしてい
た。本発明では回転陽極16の回転軸15と駆動電動機
(回転子24)が一体となっているため、回転数を大き
くとっても振動等の問題が発生しない。従って、Nを大
きくとることにより小形でも従来と同等以上の電子ビ−
ム照射電力Gを得ることが可能となっている。本実施例
ではDを70mmとして、インバ−タ−モ−タ−(高周
波モ−タ−)を用いて回転速度Nを9000回転毎分と
することにより、回転軸方向の電子ビ−ム照射長1m
m、回転軸直交方向の電子ビ−ム照射長0.4mmで約
5kWの電子ビ−ム照射電力を得ている。この電力値は
同等のDをもつ従来装置の約2倍の値である。Here, if the anode diameter D is increased, the X-ray generation tube becomes larger. In the conventional device, since the rotary anode was driven through the rotary drive mechanism such as a pulley, a sufficient rotation speed could not be obtained due to problems such as vibration, and the diameter of the anode was increased to irradiate the electron beam. The power G was set to be large. In the present invention, since the rotary shaft 15 of the rotary anode 16 and the drive motor (rotor 24) are integrated, problems such as vibration do not occur even if the rotational speed is increased. Therefore, by making N large, even if it is small, it is more than the conventional electronic beam.
The irradiation power G can be obtained. In this embodiment, D is set to 70 mm, and the rotation speed N is set to 9000 rpm by using an inverter motor (high frequency motor), so that the electron beam irradiation length in the rotation axis direction is set. 1m
m, electron beam irradiation power of about 5 kW was obtained with an electron beam irradiation length of 0.4 mm in the direction orthogonal to the rotation axis. This power value is about twice the value of the conventional device having the same D.
【0019】(2)−2 X線発生装置の構成について 次に、図4を用いて本実施例のX線発生装置1の構成に
ついて説明する。図4において、16は回転陽極、39
は回転陽極に電子ビ−ムを照射するための電子銃、40
は電子銃から電子ビ−ムを放射するための高電圧電源、
41は回転陽極16及び電子銃39を取付けるための真
空容器、42は真空容器を高真空に保持するための真空
排気装置である。本実施例では電子銃39の熱電子放射
源には回転陽極への汚染が少ないLaB6を用いた。ま
た真空排気装置42には中真空から高真空領域で排気速
度が大きいタ−ボ分子ポンプを用いた。(2) -2 Configuration of X-ray Generator Next, the configuration of the X-ray generator 1 of this embodiment will be described with reference to FIG. In FIG. 4, 16 is a rotating anode, 39
Is an electron gun for irradiating the rotating anode with an electron beam, 40
Is a high voltage power supply for emitting an electron beam from an electron gun,
Reference numeral 41 is a vacuum container for mounting the rotating anode 16 and the electron gun 39, and 42 is a vacuum exhaust device for maintaining the vacuum container at a high vacuum. In the present embodiment, LaB 6 is used as the thermionic emission source of the electron gun 39, because the rotating anode is less contaminated. As the vacuum evacuation device 42, a turbo molecular pump having a high evacuation speed in the medium to high vacuum region is used.
【0020】(3)全反射型蛍光X線分析装置の構成例 次に、図5を用いて本実施例の全反射型蛍光X線分析装
置について説明する。図5において、1はX線発生装
置、44は分光収束X線光学系、45は超微量分析を行
なう試料、46は試料をX線の全反射条件に設定しかつ
試料のX線ビ−ム照射位置を自由に選択できる試料設定
機構、47は全反射条件を求めるための反射X線強度検
出器、48は全反射条件の試料から放出される蛍光X線
を測定するための蛍光X線検出器、49は反射X線強度
検出器及び蛍光X線検出器のデ−タを基にX線発生装置
1、分光収束X線光学系44、試料設定機構46を制御
するためのデ−タ処理制御装置、50はX線の全経路を
真空に保つための真空容器である。ここで、蛍光X線検
出器48は、試料から放出され検出器に入射するX線の
エネルギ−に比例した電圧パルスを出す型のものであ
る。本実施例では、Si(Li)検出器を用いた。この
検出器は、蛍光X線エネルギ−の分解能を0.2keV
より高くとることができ、この検出器の出力をデ−タ処
理制御装置49のアナログ−デジタル(A/D)変換器
を通してマルチチャネルメモリ−に積算することによ
り、蛍光X線スペクトルを得ることができる。(3) Example of Configuration of Total Reflection X-Ray Fluorescence Analysis Apparatus Next, the total reflection X-ray fluorescence analysis apparatus of this embodiment will be described with reference to FIG. In FIG. 5, 1 is an X-ray generator, 44 is a spectrally converging X-ray optical system, 45 is a sample for ultra-trace analysis, 46 is the X-ray beam of the sample which is set under the condition of total reflection of X-rays. A sample setting mechanism in which the irradiation position can be freely selected, 47 is a reflected X-ray intensity detector for obtaining total reflection conditions, and 48 is fluorescent X-ray detection for measuring fluorescent X-rays emitted from the sample under total reflection conditions. Reference numeral 49 is a data processing for controlling the X-ray generator 1, the spectroscopic focusing X-ray optical system 44, and the sample setting mechanism 46 based on the data of the reflected X-ray intensity detector and the fluorescent X-ray detector. The control device 50 is a vacuum container for keeping the entire X-ray path vacuum. Here, the fluorescent X-ray detector 48 is of a type that outputs a voltage pulse proportional to the energy of the X-ray emitted from the sample and incident on the detector. In this example, a Si (Li) detector was used. This detector has a resolution of fluorescent X-ray energy of 0.2 keV.
It can be made higher, and the fluorescent X-ray spectrum can be obtained by integrating the output of this detector into a multi-channel memory through an analog-digital (A / D) converter of the data processing controller 49. it can.
【0021】(4)試料分析結果 本実施例では、試料を励起するためのX線ビ−ムとして
AuのLα線を用いたが、そのX線の波長とエネルギ−
は0.12764nm及び9.712keVである。従
って、元素のK殻励起の蛍光X線としてはZn(8.6
30keV)より小さな原子番号の元素について測定が
可能である。例えば、Fe(6.398keV),Co
(6.924keV),Ni(7.471keV)及び
Cu(8.040keV)等を充分区別可能な蛍光X線
スペクトルを得ることができる。試料に含まれるこれら
元素の量は図6に示す各蛍光X線ピ−クの積分強度に比
例しマルチチャンネルメモリ−に積算されたスペクトル
を解析することにより、微量な元素の存在量を測定する
ことができる。このとき、試料からの散乱X線強度が大
きいと、エネルギ−9.712keVの試料を励起する
ためのX線ビ−ムが蛍光X線検出器48に入射し、微量
な蛍光X線の検出を困難にすることがある。とくにZn
(8.630keV)の蛍光X線は、図6に示すように、
測定された蛍光X線スペクトル上で入射X線の巨大な散
乱ピ−クにより精密な積分強度が得難くなる。また、散
乱X線強度が大きいとA/D変換のための時間が無用な
散乱強度測定に使用され、検出器及びA/D変換器の不
感時間が長くなるため、実質的な感度が低下することに
なる。(4) Sample analysis result In this example, the Lα ray of Au was used as the X-ray beam for exciting the sample, and the wavelength and energy of the X-ray were used.
Is 0.12764 nm and 9.712 keV. Therefore, Zn (8.6) is used as the fluorescent X-ray for K-shell excitation of the element.
Measurement is possible for elements with atomic numbers smaller than 30 keV). For example, Fe (6.398 keV), Co
It is possible to obtain a fluorescent X-ray spectrum capable of sufficiently distinguishing (6.924 keV), Ni (7.471 keV), Cu (8.040 keV) and the like. The amounts of these elements contained in the sample are proportional to the integrated intensity of each fluorescent X-ray peak shown in FIG. 6, and the abundance of trace elements is measured by analyzing the spectrum integrated in the multi-channel memory. be able to. At this time, if the intensity of scattered X-rays from the sample is high, an X-ray beam for exciting the sample with energy of −9.712 keV enters the fluorescent X-ray detector 48, and a small amount of fluorescent X-ray is detected. It can be difficult. Especially Zn
The fluorescent X-ray of (8.630 keV) is as shown in FIG.
Due to the huge scattering peak of incident X-rays on the measured fluorescent X-ray spectrum, it becomes difficult to obtain precise integrated intensity. In addition, when the scattered X-ray intensity is large, the time for A / D conversion is unnecessary and is used for scattering intensity measurement, and the dead time of the detector and the A / D converter becomes long, so that the sensitivity is substantially lowered. It will be.
【0022】[0022]
【発明の効果】以上説明したように、本発明によれば、
従来と同出力のX線源を用いた場合でも、高能率なX線
分光光学系により、試料に入射するX線ビ−ムの強度を
従来より大きくとるとともに、X線ビ−ムの電気ベクト
ルを試料表面に垂直な成分を支配的にすることにより、
試料表面での散乱X線強度を抑制し、従来技術より超微
量分析の感度を格段に上昇させることができる。As described above, according to the present invention,
Even when an X-ray source with the same output as the conventional one is used, the intensity of the X-ray beam incident on the sample can be made higher than before by the highly efficient X-ray spectroscopic optical system, and the electric vector of the X-ray beam By making the component perpendicular to the sample surface dominant,
The intensity of scattered X-rays on the sample surface can be suppressed, and the sensitivity of ultratrace analysis can be significantly increased as compared with the conventional technique.
【図1】本発明の原理を説明する複数X線ビ−ムを利用
した分光収束型光学系の概念図である。FIG. 1 is a conceptual diagram of a spectral focusing type optical system using a plurality of X-ray beams for explaining the principle of the present invention.
【図2】湾曲型分光結晶によるX線の分光と収束につい
ての原理説明図である。FIG. 2 is an explanatory view of the principle of X-ray spectroscopy and focusing by a curved dispersive crystal.
【図3】本発明の一実施例に用いたX線発生装置の回転
陽極部についての縦断正面図である。FIG. 3 is a vertical cross-sectional front view of a rotating anode part of an X-ray generator used in an embodiment of the present invention.
【図4】本発明の一実施例となるX線発生装置の構成例
を示す一部破断正面図である。FIG. 4 is a partially cutaway front view showing a configuration example of an X-ray generator according to an embodiment of the present invention.
【図5】本発明の一実施例となる全反射型蛍光X線分析
装置の概略構成を示すブロック図である。FIG. 5 is a block diagram showing a schematic configuration of a total reflection type fluorescent X-ray analysis apparatus as an embodiment of the present invention.
【図6】本発明の一実施例により測定された蛍光X線ス
ペクトル曲線図である。FIG. 6 is a fluorescent X-ray spectrum curve diagram measured according to an example of the present invention.
1…X線発生装置 2…X線源 3、10…X線ビ−ム 4…X線透過窓 5…スリット 6…湾曲型分光結晶 7…X線ビ−ム 8…スリット 9…収束点 14…冷媒 15…二重中空回転軸 16…回転陽極 17…電子ビ−ム照射面 18…仕切板 19…ハウジング 20…フランジ 21…回転真空シ−ル 22…軸受 23…軸受取付け枠 24…電動機の回転子 25…電動機の固定子 26…回転電極 27…ブラシ 28…ブラシ抑え用バネ及びネジ 29…軸受 30…軸受取付け枠 31…冷媒回転シ−ル 32…冷媒回転シ−ル 33…冷媒出口マウント 34…冷媒入口マウント 35…冷媒外部放出用円板 36…永久磁石小片 37…回転検出機構 39…電子銃 40…高電圧電源 41…真空容器 42…真空排気装置 44…分光収束X線光学系 45…試料 46…試料設定機構 47…反射X線強度検出器 48…蛍光X線検出器 49…デ−タ処理制御装置 50…真空容器。 1 ... X-ray generator 2 ... X-ray source 3, 10 ... X-ray beam 4 ... X-ray transmission window 5 ... Slit 6 ... Curved dispersive crystal 7 ... X-ray beam 8 ... Slit 9 ... Focus point 14 ... Refrigerant 15 ... Double hollow rotating shaft 16 ... Rotating anode 17 ... Electron beam irradiation surface 18 ... Partition plate 19 ... Housing 20 ... Flange 21 ... Rotating vacuum seal 22 ... Bearing 23 ... Bearing mounting frame 24 ... Electric motor Rotor 25 ... Stator of electric motor 26 ... Rotating electrode 27 ... Brush 28 ... Spring and screw for brush holding 29 ... Bearing 30 ... Bearing mounting frame 31 ... Refrigerant rotating seal 32 ... Refrigerant rotating seal 33 ... Refrigerant outlet mount Reference numeral 34 ... Refrigerant inlet mount 35 ... Refrigerant external discharge disc 36 ... Permanent magnet small piece 37 ... Rotation detection mechanism 39 ... Electron gun 40 ... High voltage power supply 41 ... Vacuum container 42 ... Vacuum exhaust device 44 ... Spectral focusing X-ray optical system 45 … Fee 46 ... sample setting mechanism 47 ... reflection X-ray intensity detectors 48 ... fluorescent X-ray detector 49 ... de - data processing control unit 50 ... vacuum vessel.
Claims (7)
出器に入射する散乱X線量を減少させることにより、試
料表面の微量物質を分析する全反射型蛍光X線分析方法
において、前記試料に照射するX線ビ−ムを複数個準備
すると共に、前記各X線ビ−ムをX線モノクロメ−タ−
を用いてそれぞれ単色化し、前記試料上で交差させて照
射する段階を有して成る全反射型蛍光X線分析方法。1. A total reflection type fluorescent X-ray analysis method for analyzing trace substances on a sample surface by totally reflecting X-rays on the sample surface and reducing the amount of scattered X-rays entering a fluorescent X-ray detector, A plurality of X-ray beams for irradiating the sample are prepared, and each X-ray beam is irradiated with an X-ray monochromator.
The method for total reflection X-ray fluorescence analysis, which comprises the steps of:
検出器に入射する散乱X線の量を減少させることによ
り、前記試料表面の微量物質を分析する手段を備えた全
反射型蛍光X線分析装置において、複数個のX線ビ−ム
を各々X線モノクロメ−タ−を用いて単色化させ、それ
らを前記試料上で交差させて照射する手段を有して成る
全反射型蛍光X線分析装置。2. Total reflection having means for analyzing a trace substance on the surface of a sample by total reflection of X-rays on the surface of the sample and reducing the amount of scattered X-rays incident on a fluorescent X-ray detector. -Type fluorescent X-ray analyzer comprising means for illuminating a plurality of X-ray beams by using an X-ray monochromator to cross-irradiate them on the sample. Type X-ray fluorescence analyzer.
それぞれ異なる取り出し口から取り出す手段を有して成
る請求項2記載の全反射型蛍光X線分析装置。3. The total reflection type X-ray fluorescence analyzer according to claim 2, further comprising means for taking out the plurality of X-ray beams from different outlets of the same X-ray source.
異なるX線源から取り出す手段を有して成る請求項2記
載の全反射型蛍光X線分析装置。4. A total reflection type X-ray fluorescence analyzer according to claim 2, further comprising means for taking out the plurality of X-ray beams from different X-ray sources independent of each other.
色化し、かつ集光する湾曲型モノクロメ−タ−をX線ビ
−ム行路内に具備して、X線ビ−ムの電気ベクトルが試
料表面の垂直方向成分を最大とするような光学系を構成
することにより、蛍光X線検出器に入射する試料からの
散乱X線量を減少させ、分析感度を上昇させるようにし
て成る請求項2乃至4何れか記載の全反射型蛍光X線分
析装置。5. A curved monochromator for monochromaticizing and condensing the X-ray beam extracted from the X-ray source is provided in the X-ray beam path so that the X-ray beam can be emitted. By constructing an optical system in which the electric vector maximizes the vertical component of the sample surface, the amount of scattered X-rays from the sample incident on the X-ray fluorescence detector is reduced and the analysis sensitivity is increased. The total reflection type fluorescent X-ray analyzer according to claim 2.
し、X線源の位置、X線モノクロメ−タ−の位置及び試
料の位置を、それぞれ真空容器外部から移動制御できる
制御機構を具備して成る請求項2乃至5何れか記載の全
反射型蛍光X線分析装置。6. The path of the X-ray beam is arranged in a vacuum container, and the position of the X-ray source, the position of the X-ray monochromator and the position of the sample can be controlled to be moved from outside the vacuum container. The total reflection type X-ray fluorescence analyzer according to claim 2, further comprising a control mechanism.
光X線検出器に対し試料位置を真空容器外部から水平も
しくは回転移動制御できる制御機構を具備して成る請求
項6記載の全反射型蛍光X線分析装置。7. A control mechanism for controlling the position of the X-ray beam irradiating the sample surface and the position of the sample with respect to the fluorescent X-ray detector from the outside of the vacuum container in a horizontal or rotational movement. Total reflection X-ray fluorescence analyzer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2347991A JP2877534B2 (en) | 1991-02-18 | 1991-02-18 | Total reflection X-ray fluorescence analysis method and analyzer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2347991A JP2877534B2 (en) | 1991-02-18 | 1991-02-18 | Total reflection X-ray fluorescence analysis method and analyzer |
Publications (2)
Publication Number | Publication Date |
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JPH06118034A true JPH06118034A (en) | 1994-04-28 |
JP2877534B2 JP2877534B2 (en) | 1999-03-31 |
Family
ID=12111668
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---|---|---|---|
JP2347991A Expired - Lifetime JP2877534B2 (en) | 1991-02-18 | 1991-02-18 | Total reflection X-ray fluorescence analysis method and analyzer |
Country Status (1)
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JP (1) | JP2877534B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002195963A (en) * | 2000-12-25 | 2002-07-10 | Ours Tex Kk | X-ray spectroscope apparatus and x-ray analyzing apparatus |
JP2006053012A (en) * | 2004-08-11 | 2006-02-23 | Technos Kenkyusho:Kk | X-ray fluorescence analyzer |
WO2023117921A1 (en) * | 2021-12-21 | 2023-06-29 | Universität Hamburg | X-ray irradiation apparatus, including a spectrally shaping x-ray optic and a spectral filter aperture device, for x-ray imaging |
-
1991
- 1991-02-18 JP JP2347991A patent/JP2877534B2/en not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002195963A (en) * | 2000-12-25 | 2002-07-10 | Ours Tex Kk | X-ray spectroscope apparatus and x-ray analyzing apparatus |
JP2006053012A (en) * | 2004-08-11 | 2006-02-23 | Technos Kenkyusho:Kk | X-ray fluorescence analyzer |
JP4537149B2 (en) * | 2004-08-11 | 2010-09-01 | 株式会社リガク | X-ray fluorescence analysis method |
WO2023117921A1 (en) * | 2021-12-21 | 2023-06-29 | Universität Hamburg | X-ray irradiation apparatus, including a spectrally shaping x-ray optic and a spectral filter aperture device, for x-ray imaging |
Also Published As
Publication number | Publication date |
---|---|
JP2877534B2 (en) | 1999-03-31 |
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