JPH0590553A - Infrared ray detector and manufacturing method thereof - Google Patents
Infrared ray detector and manufacturing method thereofInfo
- Publication number
- JPH0590553A JPH0590553A JP3252314A JP25231491A JPH0590553A JP H0590553 A JPH0590553 A JP H0590553A JP 3252314 A JP3252314 A JP 3252314A JP 25231491 A JP25231491 A JP 25231491A JP H0590553 A JPH0590553 A JP H0590553A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- infrared
- substrate
- infrared detector
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000001259 photo etching Methods 0.000 claims abstract description 6
- 238000001312 dry etching Methods 0.000 claims abstract description 4
- 238000001514 detection method Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 16
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 5
- 239000010409 thin film Substances 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 230000002745 absorbent Effects 0.000 abstract 3
- 239000002250 absorbent Substances 0.000 abstract 3
- 238000001704 evaporation Methods 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、支持基板上に形成され
た赤外線検出器を含む赤外線検出装置およびその製造方
法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an infrared detecting device including an infrared detector formed on a supporting substrate and a manufacturing method thereof.
【０００２】[0002]
【従来の技術】赤外線検出装置において、一般にその赤
外線検出器の材料は、その検出器から出力される信号を
処理するためのアンプ部や、Ｓ／Ｈ回路部を構成する半
導体材料と異なる場合が多い。したがって、赤外線検出
器とその信号回路は、通常なんらかの手段を用いて接続
されている。これまで最も一般的な方法は、それぞれ別
のチップに作成されたものを、ワイヤボンディング技術
などを用いて接続する方法である。2. Description of the Related Art In an infrared detector, the material of the infrared detector is generally different from the semiconductor material constituting the amplifier section for processing the signal output from the detector and the S / H circuit section. Many. Therefore, the infrared detector and its signal circuit are usually connected by some means. The most common method so far is a method of connecting the chips formed on different chips using a wire bonding technique or the like.
【０００３】図５および図６は従来方式の例を示してい
る。図５は、それぞれ別々に作製したチップ、すなわち
赤外線検出器３３と信号処理基板３２をベース３１にマ
ウントし、前述したようなワイヤボンディング技術を用
いて、ワイヤ３４で接続しているところを示したもので
ある。図６は、同じく別々に作製された信号処理基板３
２と赤外線検出器３３を、ベース３１上で柱状電極（ペ
ースト３５）を介して接続しているところを示したもの
である。5 and 6 show an example of a conventional system. FIG. 5 shows that the chips, that is, the infrared detector 33 and the signal processing substrate 32, which are separately manufactured, are mounted on the base 31 and are connected by the wires 34 using the wire bonding technique as described above. It is a thing. FIG. 6 shows a signal processing board 3 which is also produced separately.
2 shows that the infrared ray detector 33 and the infrared detector 33 are connected to each other on the base 31 via the columnar electrode (paste 35).
【０００４】[0004]
【発明が解決しようとする課題】ところで赤外線検出器
から出力される信号は、非常に微弱なレベルであるた
め、また通常は赤外線検出器の出力インピーダンスが非
常に高いため、周辺部からの雑音の影響が受けやすい。
すなわち、上述したようなチップを別々に作製し接続し
たハイブリッド形式では、雑音レベルがなかなか小さく
ならないという問題がある。そこで本発明は、上記従来
技術の問題点を解決した赤外線検出装置と、そのため有
効な製造方法を提供することを目的とする。The signal output from the infrared detector has a very weak level, and the output impedance of the infrared detector is usually very high. It is easily affected.
That is, there is a problem that the noise level does not easily decrease in the hybrid type in which the chips described above are separately manufactured and connected. Therefore, it is an object of the present invention to provide an infrared detection device that solves the above-mentioned problems of the prior art and an effective manufacturing method therefor.
【０００５】[0005]
【課題を解決するための手段】本発明に係る赤外線検出
装置は、支持基板上に赤外線検出器が搭載された赤外線
検出装置において、支持基板表面の所定位置に形成され
た電極パターンと、この電極パターンに一部が接するよ
うに所定パターンで前記支持基板上に形成された赤外線
検出器の下部電極と、この下部電極を覆うように所定パ
ターンで形成された赤外線検出器の構成材料の層および
上部電極とを備えていることを特徴とする。An infrared detecting device according to the present invention is an infrared detecting device in which an infrared detector is mounted on a supporting substrate, and an electrode pattern formed at a predetermined position on the surface of the supporting substrate and this electrode. A lower electrode of the infrared detector formed on the supporting substrate in a predetermined pattern so that a part of the infrared detector is in contact with the pattern, and a layer and an upper portion of the constituent material of the infrared detector formed in the predetermined pattern so as to cover the lower electrode. And an electrode.
【０００６】また、本発明に係る赤外線検出装置の製造
方法は、支持基板に赤外線材料の薄膜を形成し、フォト
エッチ工程とドライエッチング工程を利用することによ
りモノリシック化された赤外線検出装置を製造すること
を特徴とするものである。In the method for manufacturing an infrared detecting device according to the present invention, a thin film of an infrared material is formed on a supporting substrate, and a photolithography process and a dry etching process are used to manufacture a monolithic infrared detecting device. It is characterized by that.
【０００７】[0007]
【作用】以上の通り、本発明では、赤外線検出装置を製
造するにあたって、ハイブリッド形式ではなくモノリシ
ック形式で形成したので、モノリシック化されることに
より非常に安定した高歩留り、再現性が実現でき、極め
て優れた装置性能と特に低雑音化が実現できる。As described above, according to the present invention, when the infrared detector is manufactured, the infrared detector is formed in the monolithic type instead of the hybrid type. Excellent device performance and especially low noise can be realized.
【０００８】[0008]
【実施例】以下、本発明の一実施例を説明する。EXAMPLE An example of the present invention will be described below.
【０００９】図１は、本発明によるもので、集積回路基
板であるＰ−Ｓｉ基板１１上に赤外線検出部を作成した
赤外線検出装置の構造断面図である。また、図２も、本
発明によるもので、集積回路基板であるＰ−Ｓｉ基板１
１上に赤外線検出部を作成し、さらに赤外線検出部の熱
変換効率を向上させるために、赤外線検出部の真下に位
置する半導体基板１１をエッチング技術により除去し、
熱絶縁構造としての空胴１８を形成したものである。FIG. 1 is a structural sectional view of an infrared detecting device according to the present invention in which an infrared detecting portion is formed on a P-Si substrate 11 which is an integrated circuit substrate. 2 is also according to the present invention, and is a P-Si substrate 1 which is an integrated circuit substrate.
In order to improve the heat conversion efficiency of the infrared detecting part, the semiconductor substrate 11 located directly below the infrared detecting part is removed by an etching technique in order to improve the heat conversion efficiency of the infrared detecting part.
The cavity 18 is formed as a heat insulating structure.
【００１０】図１および図２に示した断面構造を有する
本発明による赤外線装置を実現するためのプロセス・フ
ローチャートを、図３（ａ）および（ｂ）と、図４
（ｃ）および（ｄ）に示す。この図面に沿って、本発明
の実施例の構造と製造方法を示す。A process flow chart for realizing an infrared device according to the present invention having the sectional structure shown in FIGS. 1 and 2 is shown in FIGS.
Shown in (c) and (d). A structure and a manufacturing method of an embodiment of the present invention will be shown with reference to the drawings.
【００１１】まず、Ｐ−Ｓｉ基板１１にＪ−ＦＥＴ（接
合型以外のトランジスタでもよい）を形成し、図示しな
い集積回路（赤外線検出部の駆動用回路あるいは検出信
号の処理回路）を形成しておき、図示のように、Ｊ−Ｆ
ＥＴのソース電極１３とゲート電極１４を設けておく。
そして、集積回路を搭載したシリコン半導体基板１１表
面の絶縁膜１２上の所望の位置に、下部電極を兼ねた熱
吸収膜１５（ＮｉＣｒなど）をフォトエッチ工程と蒸着
技術などを用いて１０００〜２０００オングストローム
程度形成する（図３（ｂ）参照）。もちろん、集積回路
を搭載したシリコン半導体基板１１の代わりに、ＣＣＤ
デバイスを搭載した半導体基板、熱絶縁構造を形成した
支持基板、電極パターンが形成された熱伝導率の低い支
持基板などを用いても良いことは明らかである。First, a J-FET (a transistor other than a junction type may be formed) is formed on the P-Si substrate 11, and an integrated circuit (a driving circuit for an infrared detecting section or a detection signal processing circuit) not shown is formed. Every time, as shown in the figure, JF
The source electrode 13 and the gate electrode 14 of ET are provided.
Then, at a desired position on the insulating film 12 on the surface of the silicon semiconductor substrate 11 on which the integrated circuit is mounted, a heat absorbing film 15 (NiCr or the like) which also serves as a lower electrode is formed by a photoetching process and a vapor deposition technique to a thickness of 1000 to 2000 It is formed to a thickness of about angstrom (see FIG. 3B). Of course, instead of the silicon semiconductor substrate 11 mounting the integrated circuit, a CCD
It is obvious that a semiconductor substrate on which a device is mounted, a supporting substrate having a heat insulating structure formed thereon, a supporting substrate having an electrode pattern formed thereon and having a low thermal conductivity may be used.
【００１２】次に、赤外線検出部１６となる薄膜を塗布
技術を用いて１μｍ〜５μｍ程度形成する。塗布される
薄膜材料には、焦電特性を示す有機高分子材料（フッ化
ビニリデンの共重合体など）を用いる。さらに、上部電
極となる熱吸収膜１７（ＮｉＣｒなど）を蒸着技術を用
いて１００〜３００オングストローム程度堆積する（図
３（ｂ）参照）。Next, a thin film to be the infrared detecting portion 16 is formed to a thickness of about 1 μm to 5 μm by using a coating technique. As the thin film material to be applied, an organic polymer material exhibiting pyroelectric properties (such as a vinylidene fluoride copolymer) is used. Further, a heat absorbing film 17 (NiCr or the like) which will be the upper electrode is deposited to about 100 to 300 angstrom by using the vapor deposition technique (see FIG. 3B).
【００１３】その後、フォトエッチ工程により所望の形
状、位置にフォトレジスト膜１８を形成する（図４
（ａ）参照）。このフォトレジスト膜１８をマスクとし
て、ドライエッチング技術により熱吸収膜１７、赤外線
検出部１６をパターニングし、さらにフォトレジスト膜
１８を除去する（図４（ｂ）参照）ことにより、図１に
示した装置断面構造を有する赤外線検出装置が得られ
る。Then, a photoresist film 18 is formed in a desired shape and position by a photo-etching process (see FIG. 4).
(See (a)). Using the photoresist film 18 as a mask, the heat absorption film 17 and the infrared detecting portion 16 are patterned by the dry etching technique, and the photoresist film 18 is removed (see FIG. 4B) to obtain the structure shown in FIG. An infrared detection device having a device cross-sectional structure is obtained.
【００１４】その後、基板１１の裏面を選択エッチング
すれば、図２の構造が得られる。図２の熱絶縁構造を採
用すれば、モノリシック化による利点を有しながら、熱
変換効率の更なる向上が可能である。After that, if the back surface of the substrate 11 is selectively etched, the structure shown in FIG. 2 is obtained. If the heat insulation structure of FIG. 2 is adopted, the heat conversion efficiency can be further improved while having the advantage of monolithic structure.
【００１５】このように、本発明による製造方法は、通
常のシリコンＩＣ技術で使用されている技術が流用でき
るため、製造方法が安定しており、再現性が良く、また
従来例のようなハイブリッド形式にくらべモノリシック
化が実現できるので、ワイヤボンディングなどを用いた
ときの外来雑音を極めて小さくすることができるので、
非常に特性の優れた赤外線検出装置が提供できる。As described above, in the manufacturing method according to the present invention, since the technology used in the ordinary silicon IC technology can be used, the manufacturing method is stable, the reproducibility is good, and the hybrid method as in the conventional example. Since it is possible to realize monolithic compared to the type, external noise when using wire bonding etc. can be made extremely small,
It is possible to provide an infrared detection device having excellent characteristics.
【００１６】[0016]
【発明の効果】以上の通り、本発明では、赤外線検出装
置をハイブリッド形式ではなくモノリシック形式で形成
したので、モノリシック化されることにより非常に安定
した高歩留り、再現性が実現でき、極めて優れた装置性
能と特に低雑音化が実現できる。As described above, according to the present invention, since the infrared detecting device is formed in the monolithic type instead of the hybrid type, it is possible to realize a very stable high yield and reproducibility by being monolithic, which is extremely excellent. Device performance and especially noise reduction can be realized.
【００１７】[0017]
【図１】本発明の第１実施例を示す装置断面構造を示す
図である。FIG. 1 is a diagram showing a device cross-sectional structure showing a first embodiment of the present invention.
【図２】本発明の第２実施例を示す装置断面構造を示す
図である。FIG. 2 is a diagram showing a device cross-sectional structure showing a second embodiment of the present invention.
【図３】本発明による装置を実現するためのプロセス・
フローチャート（前半）である。FIG. 3 is a process for realizing an apparatus according to the present invention.
It is a flowchart (first half).
【図４】本発明による装置を実現するためのプロセス・
フローチャート（後半）である。FIG. 4 is a process for realizing an apparatus according to the present invention.
It is a flowchart (second half).
【図５】従来例を示す図である。FIG. 5 is a diagram showing a conventional example.
【図６】従来例を示す図である。FIG. 6 is a diagram showing a conventional example.
１１…Ｐ−Ｓｉ基板、１２…絶縁膜、１３…ソース電
極、１４…ゲート電極 １５…熱吸収膜（下部電極）、１６…赤外線検出部、１
７…熱吸収膜（上部電極）11 ... P-Si substrate, 12 ... Insulating film, 13 ... Source electrode, 14 ... Gate electrode 15 ... Heat absorption film (lower electrode), 16 ... Infrared detector, 1
7 ... Heat absorption film (upper electrode)
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０４Ｎ 5/33 8838−5Ｃ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location H04N 5/33 8838-5C
Claims (4)
赤外線検出装置において、 前記支持基板表面の所定位置に形成された電極パターン
と、この電極パターンに一部が接するように所定パター
ンで前記支持基板上に形成された前記赤外線検出器の下
部電極と、この下部電極を覆うように所定パターンで形
成された前記赤外線検出器の構成材料の層および上部電
極とを備えていることを特徴とする赤外線検出装置。1. An infrared detection device in which an infrared detector is mounted on a support substrate, wherein an electrode pattern formed at a predetermined position on the surface of the support substrate and a predetermined pattern such that a part of the electrode pattern is in contact with the electrode pattern. A lower electrode of the infrared detector formed on a supporting substrate, a layer of a constituent material of the infrared detector formed in a predetermined pattern so as to cover the lower electrode, and an upper electrode, Infrared detection device.
導体基板には信号処理用の集積回路もしくはＣＣＤデバ
イスが形成されている請求項１記載の赤外線検出装置。2. The infrared detection device according to claim 1, wherein the support substrate is a semiconductor substrate, and an integrated circuit for signal processing or a CCD device is formed on the semiconductor substrate.
去されて熱絶縁構造が形成されている請求項１記載の赤
外線検出装置。3. The infrared detection device according to claim 1, wherein a portion of the support substrate immediately below the lower electrode is removed to form a heat insulating structure.
赤外線検出装置の製造方法において、 前記支持基板表面の所定位置に電極パターンを形成し、
次いで前記支持基板に蒸着技術を用いて前記赤外線検出
器の一方の電極材料を堆積し、フォトエッチ工程を経て
所望の形にパターニングし、次に赤外線検出器となる材
料をスパッタ技術、塗布技術などにより膜として形成
し、さらに蒸着技術により熱吸収膜を兼ねた赤外線検出
器の他方の電極材料を堆積し、その後フォトエッチ工程
とドライエッチング技術により該赤外線検出器と該熱吸
収膜を所望の形にパターニングし、さらに該一方の電極
と該他方の電極の間に電圧を印加してポーリングを行う
ことを特徴とする赤外線検出装置の製造方法。4. A method of manufacturing an infrared detection device in which an infrared detector is mounted on a supporting substrate, wherein an electrode pattern is formed at a predetermined position on the surface of the supporting substrate,
Next, one electrode material of the infrared detector is deposited on the supporting substrate by using a vapor deposition technique, patterned into a desired shape through a photoetching process, and then the material to be the infrared detector is sputtered, coated or the like. The infrared detector and the heat absorbing film are formed into a desired film by a photo-etching process and a dry etching technique. A method for manufacturing an infrared detecting device, comprising: patterning into a pattern and further applying a voltage between the one electrode and the other electrode to perform poling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3252314A JPH0590553A (en) | 1991-09-30 | 1991-09-30 | Infrared ray detector and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3252314A JPH0590553A (en) | 1991-09-30 | 1991-09-30 | Infrared ray detector and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0590553A true JPH0590553A (en) | 1993-04-09 |
Family
ID=17235530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3252314A Pending JPH0590553A (en) | 1991-09-30 | 1991-09-30 | Infrared ray detector and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0590553A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011136203A1 (en) * | 2010-04-26 | 2011-11-03 | 株式会社エッチ．エム．イー． | Temperature sensor device and radiation thermometer using same, method for producing temperature sensor device, multilayered thin film thermopile using photoresist film and radiation thermometer using same, and method for producing multilayered thin film thermopile |
| JP2018500577A (en) * | 2014-10-31 | 2018-01-11 | エンベリオン オイＥｍｂｅｒｉｏｎ Ｏｙ | Sensing device |
| EP3015834B1 (en) * | 2014-10-31 | 2020-10-14 | Emberion Oy | An apparatus and method for sensing |
| US10847567B2 (en) | 2017-01-12 | 2020-11-24 | Mitsubishi Electric Corporation | Infrared sensor device including infrared sensor substrate and signal processing circuit substrate coupled to each other |
-
1991
- 1991-09-30 JP JP3252314A patent/JPH0590553A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011136203A1 (en) * | 2010-04-26 | 2011-11-03 | 株式会社エッチ．エム．イー． | Temperature sensor device and radiation thermometer using same, method for producing temperature sensor device, multilayered thin film thermopile using photoresist film and radiation thermometer using same, and method for producing multilayered thin film thermopile |
| US9759613B2 (en) | 2010-04-26 | 2017-09-12 | Hme Co., Ltd. | Temperature sensor device and radiation thermometer using this device, production method of temperature sensor device, multi-layered thin film thermopile using photo-resist film and radiation thermometer using this thermopile, and production method of multi-layered thin film thermopile |
| JP2018500577A (en) * | 2014-10-31 | 2018-01-11 | エンベリオン オイＥｍｂｅｒｉｏｎ Ｏｙ | Sensing device |
| EP3015834B1 (en) * | 2014-10-31 | 2020-10-14 | Emberion Oy | An apparatus and method for sensing |
| US10847567B2 (en) | 2017-01-12 | 2020-11-24 | Mitsubishi Electric Corporation | Infrared sensor device including infrared sensor substrate and signal processing circuit substrate coupled to each other |
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