JPH0520040B2 - - Google Patents
Info
- Publication number
- JPH0520040B2 JPH0520040B2 JP6133685A JP6133685A JPH0520040B2 JP H0520040 B2 JPH0520040 B2 JP H0520040B2 JP 6133685 A JP6133685 A JP 6133685A JP 6133685 A JP6133685 A JP 6133685A JP H0520040 B2 JPH0520040 B2 JP H0520040B2
- Authority
- JP
- Japan
- Prior art keywords
- signal input
- ultrasonic sensor
- sensor
- input electrode
- polymer film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Transducers For Ultrasonic Waves (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、超音波センサに関し、特にコンデン
サタイプの超音波センサに関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an ultrasonic sensor, and particularly to a capacitor type ultrasonic sensor.
（従来技術とその問題点）
一般に、超音波センサの一種としてコンデンサ
タイプの超音波センサが知られている。これは主
に測距センサとして用いられるセンサで、薄い金
属電極が表面に設けられた高分子フイルムとこの
高分子フイルムと一定の空換を隔てて設置された
電極により形成される。(Prior art and its problems) Generally, a capacitor type ultrasonic sensor is known as a type of ultrasonic sensor. This sensor is mainly used as a distance measurement sensor, and is made up of a polymer film with a thin metal electrode on its surface, and an electrode installed with a certain air exchange distance between the polymer film and the polymer film.
従来、上記のコンデンサタイプの超音波センサ
は主に測距用に使用され、このセンサの表面から
送り出される超音波が正面の物体にはねかえつて
センサに戻るまでの遅延時間を測ることにより、
計算式
（音速×遅延時間）／２＝距離
から、センサと対象物体との距離を求めることが
できる。この測距用超音波センサとして、ポラロ
イド社の自動焦点カメラに使用されているコンデ
ンサ型超音波センサがよく知られている。このポ
ラロイド社製の超音波センサは第３図に示すよう
に同心円状に溝が掘られたアルミ円板の表面に、
薄い金属電極が表面に設けられた高分子フイルム
が押しつけられた構造を持つ。高分子フイルムの
表面とアルミの裏面はそれぞれ電極として働き、
容易に外部と電気的に接続される。このように、
コンデンサ型超音波センサは構造が簡単であると
いう特徴を持つている。 Conventionally, the capacitor type ultrasonic sensor mentioned above has been mainly used for distance measurement, and by measuring the delay time until the ultrasonic wave sent out from the surface of the sensor bounces off an object in front and returns to the sensor,
The distance between the sensor and the target object can be determined from the calculation formula (sound speed x delay time)/2=distance. As this distance measuring ultrasonic sensor, a condenser type ultrasonic sensor used in an autofocus camera manufactured by Polaroid Corporation is well known. This ultrasonic sensor manufactured by Polaroid has a surface of an aluminum disc with concentric grooves, as shown in Figure 3.
It has a structure in which a polymer film with thin metal electrodes is pressed onto the surface. The front surface of the polymer film and the back surface of the aluminum each act as electrodes,
Easily electrically connected to the outside. in this way,
A capacitor-type ultrasonic sensor is characterized by a simple structure.
しかしながら、コンデンサ型超音波センサを複
数個アレイ状に配置し、それぞれのセンサから送
り出される超音波の相対的な位相を変化させ超音
波を走査する超音波イメージングを行う場合従来
のコンデンサ型超音波センサを使用するは困難で
あつた。すなわち、超音波走査用センサアレイに
おいてはアレイを構成するそれぞれの超音波セン
サの幅は使用する超音波の波長程度に小さくする
必要がある。たとえば周波数100kHzの超音波の
空気中での波長は約3.4mmであり、従来のコンデ
ンサ型超音波センサを波長程度の大きさにしてア
レイ状に並べるのは組立て工程が大幅に増加する
という欠点が生じていた。 However, when performing ultrasonic imaging in which multiple capacitor-type ultrasonic sensors are arranged in an array and the relative phase of the ultrasonic waves sent out from each sensor is changed to scan the ultrasonic waves, the conventional capacitor-type ultrasonic sensor It was difficult to use. That is, in an ultrasonic scanning sensor array, the width of each ultrasonic sensor forming the array must be made as small as the wavelength of the ultrasonic waves used. For example, the wavelength of ultrasonic waves with a frequency of 100 kHz in the air is approximately 3.4 mm, and the drawback of making conventional capacitor-type ultrasonic sensors into a size similar to the wavelength and arranging them in an array is that the assembly process increases significantly. It was happening.
（発明の目的）
本発明の目的は、このような従来の欠点を除去
し、センサのアレイ化に適したコンデンサ型超音
波センサを提供することにある。(Object of the Invention) An object of the present invention is to eliminate such conventional drawbacks and provide a capacitor-type ultrasonic sensor suitable for sensor array formation.
（発明の構成）
本発明によれば、少くとも表面に絶縁層が形成
された基板上の所定の位置に導電体層からなる信
号入力電極が設けられ、かつこの信号入力電極の
左右もしくは周辺に形成された高分子絶縁体のス
ペーサを介して上記信号入力電極上に一定の空間
を隔てて、薄い金属が表面に設けられた高分子フ
イルムが形成されることを特徴とする超音波セン
サが得られる。(Structure of the Invention) According to the present invention, a signal input electrode made of a conductive layer is provided at a predetermined position on a substrate having an insulating layer formed on at least the surface, and on the left and right or around the signal input electrode. An ultrasonic sensor is obtained, characterized in that a polymer film having a thin metal on its surface is formed on the signal input electrode at a certain distance via a polymer insulating spacer. It will be done.
（実施例）
以下本発明について実施例を示す図面を参照し
て説明する。第１図は本発明の一実施例を示す断
面図で同図において、１はサフアイア基板、２は
信号入力電極、３は高分子絶縁体、４は高分子フ
イルム、５は金属電極である。第２図は第１図の
平面図でサフアイア基板１上に信号入力電極２が
設けられた様子を示し、電気的な接続を取るため
金属電極に覆われていない領域が設けられてい
る。高分子絶縁体３は高分子フイルム４を信号入
力電極２と一定の空隙をあけて支持するためのも
のであり、10μｍ〜500μｍの厚さを持つ。高分子
フイルム４は1μｍ〜100μｍの厚さを持ち表面に
非常に薄い金属電極が設けられている。(Example) The present invention will be described below with reference to drawings showing examples. FIG. 1 is a sectional view showing one embodiment of the present invention. In the figure, 1 is a sapphire substrate, 2 is a signal input electrode, 3 is a polymer insulator, 4 is a polymer film, and 5 is a metal electrode. FIG. 2 is a plan view of FIG. 1, showing how the signal input electrodes 2 are provided on the sapphire substrate 1, and an area not covered with metal electrodes is provided for electrical connection. The polymer insulator 3 is for supporting the polymer film 4 with a certain gap between it and the signal input electrode 2, and has a thickness of 10 μm to 500 μm. The polymer film 4 has a thickness of 1 μm to 100 μm, and a very thin metal electrode is provided on its surface.
（発明の効果）
絶縁基板上に形成される信号入力電極２は、絶
縁基板上にアルミ、金などの金属を真空蒸着法や
スパツタ法により設けた後、フオトリソグラフイ
ーによりパターニングされたフオトレジストをマ
スクにしてエツチングすることにより、所定の形
状に精度良く加工することができる。また、同一
絶縁基板上に複数の信号入力電極をアレイ状に並
べることも上記に述べた工程により容易に実現で
きる。第４図は本発明による実施例である第１図
に示した超音波センサをアレイ化した場合の断面
図である。(Effects of the Invention) The signal input electrode 2 formed on the insulating substrate is formed by providing a metal such as aluminum or gold on the insulating substrate by vacuum evaporation or sputtering, and then applying a photoresist patterned by photolithography. By using it as a mask and etching it, it is possible to precisely process it into a predetermined shape. Furthermore, arranging a plurality of signal input electrodes in an array on the same insulating substrate can be easily realized through the steps described above. FIG. 4 is a sectional view of an array of the ultrasonic sensors shown in FIG. 1, which is an embodiment of the present invention.
本発明によれば絶縁基板上のセンサ以外の領域
に島状シリコン層を設け、この島状シリコン層を
用いて絶縁ゲート型電界効果トランジスタを形成
することができ、さらに高耐圧トランジスタ
（H.Sakuma、T.Kuriyama and T.Suzuki、
IEDM′79Technical Digest、pp.594−597）を形
成することも可能である。したがつて、コンデン
サ型超音波センサの駆動回路や検出回路も同一絶
縁基板上に設けられる。 According to the present invention, an island-like silicon layer is provided in a region other than the sensor on an insulating substrate, and an insulated gate field effect transistor can be formed using this island-like silicon layer. , T. Kuriyama and T. Suzuki,
It is also possible to form an IEDM'79 Technical Digest, pp. 594-597). Therefore, the drive circuit and detection circuit of the capacitor-type ultrasonic sensor are also provided on the same insulating substrate.
本発明は、一実施例に示したサイフアイア基板
に限らずセラミツク基板やシリコンウエーハに絶
縁膜を設けた基板を絶縁基板として用いることも
可能である。 The present invention is not limited to the cipher substrate shown in one embodiment, but it is also possible to use a ceramic substrate or a substrate formed by providing an insulating film on a silicon wafer as the insulating substrate.
第１図は本発明による超音波センサの一実施例
の断面図、第２図はこの実施例の平面図、第３図
は従来のコンデンサ型超音波センサの断面図、第
４図は本発明によるコンデンサ型超音波センサを
アレイ状に並べた一実施例の断面図である。
図において、１はサフアイア基板、２は信号入
力電極、３は高分子絶縁体、４は高分子フイル
ム、５は金属電極を示す。
FIG. 1 is a sectional view of an embodiment of an ultrasonic sensor according to the present invention, FIG. 2 is a plan view of this embodiment, FIG. 3 is a sectional view of a conventional capacitor-type ultrasonic sensor, and FIG. 4 is a sectional view of an embodiment of the ultrasonic sensor according to the present invention. 1 is a cross-sectional view of an example in which capacitor-type ultrasonic sensors according to the present invention are arranged in an array. In the figure, 1 is a sapphire substrate, 2 is a signal input electrode, 3 is a polymer insulator, 4 is a polymer film, and 5 is a metal electrode.
Claims (1)
の所定の位置に導電体層からなる信号入力電極が
設けられ、かつこの信号入力電極の左右、もしく
は周辺に形成された高分子絶縁体のスペーサを介
して上記信号入力電極上に一定の空間を隔てて、
薄い金属電極が表面に設けられた高分子フイルム
が形成されることを特徴とする超音波センサ。1 A signal input electrode made of a conductive layer is provided at a predetermined position on a substrate with an insulating layer formed on at least the surface, and spacers made of a polymeric insulator are formed on the left and right sides or around the signal input electrode. via a certain space on the signal input electrode,
An ultrasonic sensor characterized by forming a polymer film with a thin metal electrode on its surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6133685A JPS61220599A (en) | 1985-03-26 | 1985-03-26 | Ultrasonic wave sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6133685A JPS61220599A (en) | 1985-03-26 | 1985-03-26 | Ultrasonic wave sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61220599A JPS61220599A (en) | 1986-09-30 |
| JPH0520040B2 true JPH0520040B2 (en) | 1993-03-18 |
Family
ID=13168189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6133685A Granted JPS61220599A (en) | 1985-03-26 | 1985-03-26 | Ultrasonic wave sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61220599A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62149299A (en) * | 1985-12-24 | 1987-07-03 | Agency Of Ind Science & Technol | Array type ultrasonic transducer |
| JPS62284600A (en) * | 1986-06-03 | 1987-12-10 | Agency Of Ind Science & Technol | Ultrasonic transducer |
-
1985
- 1985-03-26 JP JP6133685A patent/JPS61220599A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61220599A (en) | 1986-09-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |