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JPH05332863A - Semiconductor pressure sensor - Google Patents

Semiconductor pressure sensor

Info

Publication number
JPH05332863A
JPH05332863A JP14150992A JP14150992A JPH05332863A JP H05332863 A JPH05332863 A JP H05332863A JP 14150992 A JP14150992 A JP 14150992A JP 14150992 A JP14150992 A JP 14150992A JP H05332863 A JPH05332863 A JP H05332863A
Authority
JP
Japan
Prior art keywords
pressure sensor
sensor chip
semiconductor pressure
film substrate
electrical connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14150992A
Other languages
Japanese (ja)
Other versions
JP2771923B2 (en
Inventor
Toshitaka Jo
利隆 城
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4141509A priority Critical patent/JP2771923B2/en
Publication of JPH05332863A publication Critical patent/JPH05332863A/en
Application granted granted Critical
Publication of JP2771923B2 publication Critical patent/JP2771923B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Pressure Sensors (AREA)

Abstract

PURPOSE:To obtain a semiconductor pressure sensor, which can achieve the reduction in number of parts, reduction in assembling man-hours, the low cost and the improvement in reliability. CONSTITUTION:A pressure sensor chip 20 is constituted by bonding a wafer, can which a strain-gage resistor is diffused and formed, and a glass substrate by anode bonding. A bump 21 for electrical connection is formed on the surface of the chip. The pressure sensor chip 2 is directly mounted on a thick-film substrate 11 by bonding the electrode, which is formed on the thick-film substrate 11 constituting a hybrid integrated circuit, and the bump 21 with solder.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、半導体圧力センサに
関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor pressure sensor.

【0002】[0002]

【従来の技術】図5は従来の半導体圧力センサの一例を
示す断面図、図6は従来の半導体圧力センサにおける圧
力センサチップの一例を示す断面図である。
2. Description of the Related Art FIG. 5 is a sectional view showing an example of a conventional semiconductor pressure sensor, and FIG. 6 is a sectional view showing an example of a pressure sensor chip in the conventional semiconductor pressure sensor.

【0003】図において、1は圧力センサチップであ
り、この圧力センサチップ1は、表面にひずみゲージ抵
抗体が拡散形成されるとともに電極1bが形成され、さ
らに裏面に凹部1cが形成されたウエハ1a(例えば、
シリコン単結晶板)とガラス基板2(例えば、パイレッ
クスガラス)とを真空室内で陽極接合して構成され、凹
部1c内が真空に維持され基準圧となり、ウエハ1aの
薄い部分がダイヤフラムになっている。3はリードフレ
ームであり、このリードフレーム3には、外部との接合
を図るリード足3aが形成され、さらに実装を容易にで
きるようにリード足3aがフォーミングされている。
In the figure, reference numeral 1 denotes a pressure sensor chip. The pressure sensor chip 1 has a surface on which a strain gauge resistor is diffused and an electrode 1b is formed, and a recess 1c is formed on the back surface of the wafer 1a. (For example,
A silicon single crystal plate) and a glass substrate 2 (for example, Pyrex glass) are anodically bonded in a vacuum chamber, the inside of the recess 1c is maintained at a vacuum to serve as a reference pressure, and the thin portion of the wafer 1a serves as a diaphragm. . Reference numeral 3 denotes a lead frame. The lead frame 3 is formed with lead legs 3a for joining to the outside, and the lead legs 3a are formed so as to facilitate mounting.

【0004】4は圧力センサチップ1を収納する下ケー
ス、5は円筒状の上ケース、6は電極1bとリードフレ
ーム3とを電気的に接続する金属細線からなるワイヤ、
7は圧力センサチップ1およびワイヤ6を保護するゲ
ル、8は圧力センサチップ1とリードフレーム3とを接
着固定する樹脂、9はリードフレーム3と下ケース4と
を接着固定する樹脂、10はリードフレーム3を下ケー
ス4と上ケース5との間に接着固定する樹脂、11は混
成集積回路を構成する実装基板としての厚膜基板、12
は厚膜基板11上に実装された実装部品、13は外部に
信号を引き出すためのリード足である。
Reference numeral 4 is a lower case for accommodating the pressure sensor chip 1, 5 is a cylindrical upper case, and 6 is a wire made of a fine metal wire for electrically connecting the electrode 1b and the lead frame 3.
7 is a gel for protecting the pressure sensor chip 1 and the wire 6, 8 is a resin for adhesively fixing the pressure sensor chip 1 and the lead frame 3, 9 is a resin for adhesively fixing the lead frame 3 and the lower case 4, and 10 is a lead. Resin for bonding and fixing the frame 3 between the lower case 4 and the upper case 5, 11 a thick film substrate as a mounting substrate constituting a hybrid integrated circuit, 12
Is a mounting component mounted on the thick film substrate 11, and 13 is a lead leg for extracting a signal to the outside.

【0005】このように構成された従来の半導体圧力セ
ンサでは、外部雰囲気の圧力変化が上ケース5の開口部
を介して圧力センサチップ1に印加されると、ダイヤフ
ラムが変形し、ゲージ抵抗部にひずみが発生する。この
ため、ゲージ抵抗にはピエゾ抵抗効果により大きな変化
が起こり、圧力の変化をひずみゲージの抵抗値の変化と
して取り出している。
In the conventional semiconductor pressure sensor thus configured, when a pressure change of the external atmosphere is applied to the pressure sensor chip 1 through the opening of the upper case 5, the diaphragm is deformed and the gauge resistance portion is affected. Distortion occurs. Therefore, a large change occurs in the gauge resistance due to the piezo resistance effect, and the change in pressure is taken out as the change in the resistance value of the strain gauge.

【0006】つぎに、上記従来の半導体圧力センサの製
造方法を図7乃至図9に基づいて説明する。まず、圧力
センサチップ1を保持するリードフレーム3の部位に樹
脂8を塗布し、圧力センサチップ1を載置し、樹脂8を
加熱硬化させ、リードフレーム3に圧力センサチップ1
を接着固定する。ついで、圧力センサチップ1の電極1
bとリードフレーム3とをワイヤ6で接続する。つぎ
に、下ケース4の底面に樹脂9を塗布し、リードフレー
ム3に接着固定された圧力センサチップ1を収納し、さ
らに上ケース5をかぶせ、下・上ケース4、5間に樹脂
10を塗布した後、樹脂9、10を加熱硬化させる。こ
こで、リードフレーム3は樹脂10により下ケース4と
上ケース5との間に挟持されて接着固定され、圧力セン
サチップ1が保持されたリードフレーム3の裏面が樹脂
9により下ケース4の底面に接着固定される。
Next, a method of manufacturing the above conventional semiconductor pressure sensor will be described with reference to FIGS. First, the resin 8 is applied to the portion of the lead frame 3 that holds the pressure sensor chip 1, the pressure sensor chip 1 is placed, and the resin 8 is cured by heating, and the pressure sensor chip 1 is attached to the lead frame 3.
Adhesively fix. Then, the electrode 1 of the pressure sensor chip 1
b and the lead frame 3 are connected by a wire 6. Next, the resin 9 is applied to the bottom surface of the lower case 4, the pressure sensor chip 1 adhered and fixed to the lead frame 3 is housed, the upper case 5 is further covered, and the resin 10 is placed between the lower and upper cases 4 and 5. After coating, the resins 9 and 10 are heat-cured. Here, the lead frame 3 is sandwiched between the lower case 4 and the upper case 5 by the resin 10 and adhesively fixed, and the back surface of the lead frame 3 holding the pressure sensor chip 1 is the bottom surface of the lower case 4 by the resin 9. It is fixed by adhesion.

【0007】さらに、上ケース5の開口部からゲル7を
注入し加熱硬化させて、図8に示すように、圧力センサ
チップ1、ワイヤ6等を外部雰囲気から保護する構造と
する。そこで、リードフレーム3のリード足3aをフォ
ーミングして、図9に示すように、実装し易い構造とす
る。最後に、他の実装部品12とともに厚膜基板11上
に載置し、半田付けして実装する。その後、種々の特性
検査を実施し、外部引き出しのリード足13を取り付
け、組み立てを完了する。
Further, the gel 7 is injected from the opening of the upper case 5 and heat-cured to protect the pressure sensor chip 1, the wire 6 and the like from the external atmosphere, as shown in FIG. Therefore, the lead legs 3a of the lead frame 3 are formed into a structure that facilitates mounting as shown in FIG. Finally, it is mounted on the thick film substrate 11 together with other mounting components 12 and soldered to mount. After that, various characteristic tests are performed, the lead legs 13 of the external drawer are attached, and the assembly is completed.

【0008】[0008]

【発明が解決しようとする課題】従来の半導体圧力セン
サは以上のように構成されているので、組み立て工程が
多くなり、各組み立て工程において検査が必要となると
ともに、不具合の発生が増加してしまい、組み立て作業
性、信頼性が低下するという課題があった。
Since the conventional semiconductor pressure sensor is constructed as described above, the number of assembling steps increases, inspection is required in each assembling step, and the occurrence of defects increases. However, there is a problem that assembly workability and reliability are reduced.

【0009】この発明は、上記のような課題を解決する
ためになされたもので、組み立て工程を削減でき、安価
で高信頼性の小型の半導体圧力センサを得ることを目的
とする。
The present invention has been made in order to solve the above problems, and an object thereof is to obtain an inexpensive and highly reliable small semiconductor pressure sensor which can reduce the assembly process.

【0010】[0010]

【課題を解決するための手段】この発明に係る半導体圧
力センサは、ひずみゲイジ抵抗体が拡散形成されたウエ
ハとガラス基板とを陽極接合してなる圧力センサチップ
を実装基板上に実装してなる半導体圧力センサにおい
て、圧力センサチップ表面に電気的接続用バンプを形成
し、この電気的接続用バンプを半田接合して実装基板上
に圧力センサチップを直接実装するものである。
A semiconductor pressure sensor according to the present invention has a pressure sensor chip formed by anodic bonding a wafer on which a strained gage resistor is diffused and a glass substrate on a mounting substrate. In a semiconductor pressure sensor, bumps for electrical connection are formed on the surface of the pressure sensor chip, and the bumps for electrical connection are solder-bonded to directly mount the pressure sensor chip on a mounting substrate.

【0011】[0011]

【作用】この発明においては、圧力センサチップ表面に
電気的接続用バンプを形成し、この電気的接続用バンプ
を半田接合して実装基板上に直接圧力センサを実装して
いるので、圧力センサチップと実装基板との電気的接続
のため従来必要であったワイヤ、リードフレームが不要
となり、部品点数が減少して、組み立て工数の削減が図
られるとともに、信頼性の向上が図られる。
According to the present invention, since the bumps for electrical connection are formed on the surface of the pressure sensor chip and the bumps for electrical connection are soldered to mount the pressure sensor directly on the mounting substrate, the pressure sensor chip is mounted. Since the wires and the lead frame, which have been conventionally required for electrical connection between the mounting board and the mounting board, are not required, the number of parts is reduced, the number of assembling steps is reduced, and the reliability is improved.

【0012】[0012]

【実施例】以下、この発明の実施例を図について説明す
る。図1はこの発明の一実施例を示す半導体圧力センサ
の断面図、図2および図3はそれぞれこの発明の一実施
例における圧力センサチップの斜視図および断面図であ
り、図において図5乃至図9に示した従来の半導体圧力
センサと同一または相当部分には同一符号を付し、その
説明を省略する。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view of a semiconductor pressure sensor showing an embodiment of the present invention, and FIGS. 2 and 3 are perspective and sectional views of a pressure sensor chip according to an embodiment of the present invention. FIGS. The same or corresponding parts as those of the conventional semiconductor pressure sensor shown in FIG. 9 are designated by the same reference numerals, and the description thereof will be omitted.

【0013】図において、20は圧力センサチップであ
り、この圧力センサチップ20は、表面にひずみゲージ
抵抗体が拡散形成されるとともに信号引き出し用の配線
20bが形成され、さらに裏面に凹部20cが形成され
たウエハ20a(例えば、シリコン単結晶板)とガラス
基板2(例えば、パイレックスガラス)とを真空室内で
陽極接合して構成され、凹部20c内が真空に維持され
基準圧となり、ウエハ20aの薄い部分がダイヤフラム
になっている。21は配線20bの端部に形成された電
気的接続用のバンプ、22は圧力センサチップ20がウ
エハ20aに著しく重いガラス基板2を接合して構成さ
れているのでその耐振性補強用としてウエハ20aの表
面の電気的に影響のない部位に形成されたバンプ、23
はケースである。
In the figure, reference numeral 20 denotes a pressure sensor chip. The pressure sensor chip 20 has a strain gauge resistor diffused on the front surface thereof, a wiring 20b for signal extraction formed thereon, and a recess 20c formed on the rear surface thereof. The formed wafer 20a (for example, a silicon single crystal plate) and the glass substrate 2 (for example, Pyrex glass) are anodic-bonded in a vacuum chamber, and the inside of the recess 20c is maintained at a vacuum to serve as a reference pressure. The part is a diaphragm. Reference numeral 21 is a bump for electrical connection formed at the end of the wiring 20b, and reference numeral 22 is a wafer 20a for reinforcing the vibration resistance of the pressure sensor chip 20 because the pressure sensor chip 20 is formed by bonding a remarkably heavy glass substrate 2 to the wafer 20a. Bumps 23 formed on the surface of the
Is the case.

【0014】つぎに、上記実施例の製造方法を図4に基
づいて説明する。まず、回路パターン(図示せず)が形
成された厚膜基板11上に半田ペーストを印刷塗布す
る。ついで、圧力センサチップ20および他の実装部品
12を厚膜基板11上に載置し、半田リフロー等でバン
プ21、22と厚膜基板11上の電極部との半田接合を
行い、圧力センサチップ20および他の実装部品12を
厚膜基板11上に同時に実装する。つぎに、洗浄を行
い、圧力センサチップ20を収容するように厚膜基板1
1上にケース23を樹脂により接着固定する。最後に、
外部引き出しのリード足13を取り付けて、組み立てを
完了する。
Next, the manufacturing method of the above embodiment will be described with reference to FIG. First, solder paste is printed and applied on the thick film substrate 11 on which a circuit pattern (not shown) is formed. Next, the pressure sensor chip 20 and the other mounting components 12 are placed on the thick film substrate 11, and the bumps 21 and 22 are solder-bonded to the electrode portions on the thick film substrate 11 by solder reflow or the like. 20 and other mounting components 12 are simultaneously mounted on the thick film substrate 11. Next, the thick film substrate 1 is washed so as to accommodate the pressure sensor chip 20.
The case 23 is adhesively fixed onto the top of the case 1 with resin. Finally,
Attach the lead legs 13 of the external drawer to complete the assembly.

【0015】ここで、上記実施例の半導体圧力センサの
動作は、先述の従来の半導体圧力センサと同様に動作す
る。また、ゴミ等による圧力センサチップ20の不具合
を防止するために、ウエハ20a表面に保護膜を塗布形
成している。
Here, the operation of the semiconductor pressure sensor of the above embodiment operates in the same way as the conventional semiconductor pressure sensor described above. Further, in order to prevent the pressure sensor chip 20 from being defective due to dust or the like, a protective film is formed by coating on the surface of the wafer 20a.

【0016】このように、上記実施例によれば、圧力セ
ンサチップ20表面に電気的接続用のバンプ21を形成
しているので、バンプ21と厚膜基板11上の電極部と
を半田接合して圧力センサチップ20を厚膜基板11上
に直接実装でき、組み立て工数を大幅に削減できる。さ
らに、圧力センサチップ20と厚膜基板11との電気的
接続のために従来必要であったワイヤ6、リードフレー
ム3等が不要となり、部品点数を削減できる。したがっ
て、組み立て作業性が向上し、低コスト化が図られ、高
信頼性が得られるとともに、小型化が図られる。
As described above, according to the above embodiment, since the bumps 21 for electrical connection are formed on the surface of the pressure sensor chip 20, the bumps 21 and the electrode portions on the thick film substrate 11 are soldered and joined. Thus, the pressure sensor chip 20 can be directly mounted on the thick film substrate 11, and the number of assembling steps can be significantly reduced. Further, the wires 6, the lead frame 3, etc., which have been conventionally required for the electrical connection between the pressure sensor chip 20 and the thick film substrate 11, are not necessary, and the number of parts can be reduced. Therefore, assembling workability is improved, cost is reduced, high reliability is obtained, and size reduction is achieved.

【0017】また、圧力センサチップ20表面に耐振性
補強用のバンプ22を形成しているので、ウエハ20a
の耐振性が向上し、高信頼性が得られる。
Further, since the bumps 22 for reinforcing the vibration resistance are formed on the surface of the pressure sensor chip 20, the wafer 20a is formed.
The vibration resistance of is improved and high reliability is obtained.

【0018】[0018]

【発明の効果】以上のようにこの発明によれば、ひずみ
ゲイジ抵抗体が拡散形成されたウエハとガラス基板とを
陽極接合してなる圧力センサチップを実装基板上に実装
してなる半導体圧力センサにおいて、圧力センサチップ
表面に電気的接続用バンプを形成し、電気的接続用バン
プを半田接合して実装基板上に圧力センサチップを直接
実装しているので、圧力センサチップと実装基板との電
気的接続のため従来必要であったワイヤ、リードフレー
ムが不要となり、部品点数が減少し、組み立て工数が削
減し、低コスト化が図られ、信頼性の向上が図られると
ともに小型化が図られるという効果がある。
As described above, according to the present invention, a semiconductor pressure sensor in which a pressure sensor chip formed by anodic bonding a wafer on which strained gage resistors are diffused and a glass substrate are mounted on a mounting substrate. In the above, since the electrical connection bumps are formed on the surface of the pressure sensor chip and the electrical connection bumps are solder-bonded to mount the pressure sensor chip directly on the mounting board, the electrical connection between the pressure sensor chip and the mounting board is reduced. The wires and leadframes that were required in the past are no longer needed for the dynamic connection, the number of parts is reduced, the number of assembly steps is reduced, the cost is reduced, the reliability is improved, and the size is reduced. effective.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の一実施例を示す半導体圧力センサの
断面図である。
FIG. 1 is a sectional view of a semiconductor pressure sensor showing an embodiment of the present invention.

【図2】この発明の半導体圧力センサにおける圧力セン
サチップの一実施例を示す斜視図である。
FIG. 2 is a perspective view showing an embodiment of a pressure sensor chip in the semiconductor pressure sensor of the present invention.

【図3】この発明の半導体圧力センサにおける圧力セン
サチップの一実施例を示す断面図である。
FIG. 3 is a sectional view showing an embodiment of a pressure sensor chip in the semiconductor pressure sensor of the present invention.

【図4】この発明の一実施例を示す半導体圧力センサの
分解斜視図である。
FIG. 4 is an exploded perspective view of a semiconductor pressure sensor showing one embodiment of the present invention.

【図5】従来の半導体圧力センサの一例を示す断面図で
ある。
FIG. 5 is a sectional view showing an example of a conventional semiconductor pressure sensor.

【図6】従来の半導体圧力センサにおける圧力センサチ
ップの一例を示す断面図である。
FIG. 6 is a sectional view showing an example of a pressure sensor chip in a conventional semiconductor pressure sensor.

【図7】従来の半導体圧力センサの分解斜視図である。FIG. 7 is an exploded perspective view of a conventional semiconductor pressure sensor.

【図8】従来の半導体圧力センサの製造工程断面図であ
る。
FIG. 8 is a sectional view of a manufacturing process of a conventional semiconductor pressure sensor.

【図9】従来の半導体圧力センサの製造工程断面図であ
る。
FIG. 9 is a cross-sectional view of a manufacturing process of a conventional semiconductor pressure sensor.

【符号の説明】[Explanation of symbols]

2 ガラス基板 11 厚膜基板(実装基板) 20 圧力センサチップ 20a ウエハ 21 バンプ(電気的接続用バンプ) 2 glass substrate 11 thick film substrate (mounting substrate) 20 pressure sensor chip 20a wafer 21 bump (electrical connection bump)

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 ひずみゲイジ抵抗体が拡散形成されたウ
エハとガラス基板とを陽極接合してなる圧力センサチッ
プを実装基板上に実装してなる半導体圧力センサにおい
て、前記圧力センサチップ表面に電気的接続用バンプを
形成し、前記電気的接続用バンプを半田接合して前記実
装基板上に前記圧力センサチップを直接実装したことを
特徴とする半導体圧力センサ。
1. A semiconductor pressure sensor in which a pressure sensor chip formed by anodic bonding a wafer on which a strained gage resistor is diffused to a glass substrate is mounted on a mounting substrate. A semiconductor pressure sensor characterized in that a bump for connection is formed, the bump for electrical connection is soldered and the pressure sensor chip is directly mounted on the mounting substrate.
JP4141509A 1992-06-02 1992-06-02 Semiconductor pressure sensor Expired - Lifetime JP2771923B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4141509A JP2771923B2 (en) 1992-06-02 1992-06-02 Semiconductor pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4141509A JP2771923B2 (en) 1992-06-02 1992-06-02 Semiconductor pressure sensor

Publications (2)

Publication Number Publication Date
JPH05332863A true JPH05332863A (en) 1993-12-17
JP2771923B2 JP2771923B2 (en) 1998-07-02

Family

ID=15293617

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4141509A Expired - Lifetime JP2771923B2 (en) 1992-06-02 1992-06-02 Semiconductor pressure sensor

Country Status (1)

Country Link
JP (1) JP2771923B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007240250A (en) * 2006-03-07 2007-09-20 Fujikura Ltd Pressure sensor, pressure sensor package, pressure sensor module and electronic component
JP2010008434A (en) * 2009-10-15 2010-01-14 Hokuriku Electric Ind Co Ltd Semiconductor pressure sensor
WO2023233819A1 (en) * 2022-05-31 2023-12-07 株式会社日立ハイテク Pressure sensor

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Publication number Priority date Publication date Assignee Title
JPS58107682A (en) * 1981-12-21 1983-06-27 Mitsubishi Electric Corp Semiconductor pressure detecting device
JPH0495740A (en) * 1990-08-06 1992-03-27 Toyota Autom Loom Works Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58107682A (en) * 1981-12-21 1983-06-27 Mitsubishi Electric Corp Semiconductor pressure detecting device
JPH0495740A (en) * 1990-08-06 1992-03-27 Toyota Autom Loom Works Ltd Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007240250A (en) * 2006-03-07 2007-09-20 Fujikura Ltd Pressure sensor, pressure sensor package, pressure sensor module and electronic component
JP2010008434A (en) * 2009-10-15 2010-01-14 Hokuriku Electric Ind Co Ltd Semiconductor pressure sensor
WO2023233819A1 (en) * 2022-05-31 2023-12-07 株式会社日立ハイテク Pressure sensor

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