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JPH05326526A - Composite film and formation of solder bump using the same - Google Patents

Composite film and formation of solder bump using the same

Info

Publication number
JPH05326526A
JPH05326526A JP4152849A JP15284992A JPH05326526A JP H05326526 A JPH05326526 A JP H05326526A JP 4152849 A JP4152849 A JP 4152849A JP 15284992 A JP15284992 A JP 15284992A JP H05326526 A JPH05326526 A JP H05326526A
Authority
JP
Japan
Prior art keywords
solder
composite film
film
present
bumps
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4152849A
Other languages
Japanese (ja)
Inventor
Masakazu Sugimoto
正和 杉本
Kazuo Ouchi
一男 大内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Priority to JP4152849A priority Critical patent/JPH05326526A/en
Priority to EP19920120222 priority patent/EP0544305A3/en
Publication of JPH05326526A publication Critical patent/JPH05326526A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19043Component type being a resistor

Landscapes

  • Manufacturing Of Printed Wiring (AREA)

Abstract

PURPOSE:To provide a composite film, which is capable of forming solder bumps on a semiconductor element, electrical and electronic components, an electric circuit and the like with high accuracy even at a narrow pitch and easily, and a method of forming the solder bumps using this film. CONSTITUTION:A solder 2 is held in a composite film in such a way that it is made to penetrate an insulative film 1 consisting of a polyimide resin or the like front the surface to the back surface and protrudes from the surface on at least one side of the surfaces and this solder 2 is held in a state that it can be separated from the film 2 by heating and melting. It is desirable that the formation of a through hole in the film 1 is performed by a laser processing.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体装置やプリンタ
ー、記録装置、表示装置、電気部品、電気回路などの各
種部品の接続や実装に用いられる半田バンプを形成する
ための複合フィルム、およびこのフィルムを用いてなる
半田バンプ形成方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composite film for forming solder bumps used for connecting and mounting various parts such as semiconductor devices, printers, recording devices, display devices, electric parts and electric circuits, and this film. The present invention relates to a solder bump forming method using

【0002】[0002]

【従来の技術】近年における半導体産業の発展に伴っ
て、電子機器の薄型化や小型軽量化が進み、各種電気回
路部品を一定面積の基板上に高密度に実装することが要
望されている。特に、OA機器に内蔵されている各種機
能部品においては表面実装など小型化に対する改善が推
進されている。そして、上記高密度実装の要求はさらに
厳しくなり、実装時の端子ピッチは0.3mm以下のも
のも要望されるようになっている。
2. Description of the Related Art With the recent development of the semiconductor industry, electronic devices have become thinner, smaller and lighter, and it has been desired to mount various electric circuit components on a substrate having a constant area with high density. In particular, improvements have been promoted for miniaturization such as surface mounting of various functional parts built into OA equipment. The demand for high-density mounting has become more severe, and a terminal pitch at the time of mounting is 0.3 mm or less.

【0003】しかしながら、このような実装に際しては
通常、実装時の接続端子として半田ペーストを印刷など
によって形成してバンプを用いており、端子ピッチが狭
くなればなるほど印刷された半田バンプ間に半田ブリッ
ジが発生する可能性が高くなり、電気的接続信頼性が低
下するようになる。また、印刷法では半田量のバラツキ
が大きいので、高精度に半田バンプを形成しがたいもの
である。
However, in such mounting, bumps are usually used by forming a solder paste by printing or the like as connection terminals at the time of mounting, and the solder bridge between the printed solder bumps becomes smaller as the terminal pitch becomes narrower. Is more likely to occur, and the reliability of electrical connection is reduced. Further, in the printing method, since the amount of solder varies widely, it is difficult to form solder bumps with high accuracy.

【0004】[0004]

【発明が解決しようとする課題】本発明は上記従来の半
田バンプ形成技術における種々の問題に鑑みてなされた
ものであって、半導体素子や電気・電子部品、電気回路
などに狭ピッチであっても高精度で、しかも容易に接続
や接点に用いる半田バンプを形成することができる複合
フィルムの提供、およびこのフィルムを用いた半田バン
プ形成方法形成方法を提供することを目的とする。
SUMMARY OF THE INVENTION The present invention has been made in view of various problems in the above-mentioned conventional solder bump forming technique, and has a narrow pitch in semiconductor elements, electric / electronic parts, electric circuits and the like. Another object of the present invention is to provide a composite film that can form solder bumps used for connection and contact with high accuracy and easily, and to provide a solder bump forming method forming method using this film.

【0005】[0005]

【課題を解決するための手段】そこで、本発明者らは上
記目的を達成するために鋭意検討を重ねた結果、バンプ
用の半田を溶融離脱可能な状態で保持する特定構造の複
合フィルムを用いることによって、半田バンプを容易に
形成できることを見い出し、本発明を完成するに至っ
た。
The inventors of the present invention have conducted extensive studies to achieve the above object, and as a result, use a composite film having a specific structure for holding the solder for bumps in a meltable and detachable state. As a result, they have found that solder bumps can be easily formed, and completed the present invention.

【0006】即ち、本発明は絶縁性フィルムの表裏面に
貫通し、かつ少なくとも一方の面から突出するようにバ
ンプ用の半田を溶融離脱可能な状態で保持してなる複合
フィルムを提供するものである。
That is, the present invention provides a composite film which holds the solder for bumps in a meltable and detachable state so as to penetrate the front and back surfaces of the insulating film and project from at least one surface. is there.

【0007】また、本発明は半導体素子または電気回
路、もしくは電気回路部品上に請求項1記載の複合フィ
ルムを位置させ、突出しているハンダ部を被転写部に接
触させたのち、加熱することによって保持されたハンダ
を溶融転写することを特徴とする半田バンプ形成方法を
提供するものである。
Further, according to the present invention, the composite film according to claim 1 is placed on a semiconductor element, an electric circuit, or an electric circuit component, and the projecting solder portion is brought into contact with the transferred portion and then heated. The present invention provides a method for forming solder bumps, which comprises melting and transferring the held solder.

【0008】以下、本発明の複合フィルムおよびこれを
用いた半田バンプ形成方法を図面を用いて説明する。
A composite film of the present invention and a solder bump forming method using the same will be described below with reference to the drawings.

【0009】図1は本発明の複合フィルムの一実例を示
す拡大断面図である。
FIG. 1 is an enlarged sectional view showing an example of the composite film of the present invention.

【0010】図1から明らかなように、本発明の複合フ
ィルムには絶縁性フィルム1の表裏面に貫通して半田2
が保持されており、この半田2は一方の表面(図中、上
側)に突出しており、加熱によって溶融して離脱するよ
うに保持されている。絶縁性フィルム1からの半田2の
突出形状は、特に限定されないが、被着体としての半導
体素子や電気回路、電気回路部品への確実な溶融転写の
ためには図示するようなマッシュルーム形状とすること
が好ましい。
As is apparent from FIG. 1, in the composite film of the present invention, the solder 2 is penetrated through the front and back surfaces of the insulating film 1.
This solder 2 is projected to one surface (upper side in the drawing) and is held so as to be melted and separated by heating. The protruding shape of the solder 2 from the insulating film 1 is not particularly limited, but in order to reliably melt transfer to a semiconductor element as an adherend, an electric circuit, or an electric circuit component, a mushroom shape as illustrated is used. Preferably.

【0011】絶縁性フィルム1は電気絶縁性を有するも
のであり、保持する半田が溶融する温度での耐熱性を有
するものであればよい。具体的にはポリエステル系樹
脂、エポキシ系樹脂、ウレタン系樹脂、ポリスチレン系
樹脂、ポリエチレン系樹脂、ポリアミド系樹脂、ポリイ
ミド系樹脂、ABS樹脂、ポリカーボネート樹脂、シリ
コーン系樹脂、フッ素系樹脂など熱硬化性樹脂や熱可塑
性樹脂を問わず用いることができる。これらの樹脂のう
ち、半田バンプを転写する際の位置合わせの容易性から
は透明性を有する樹脂が好ましく、また、耐熱性や機械
的強度の点からはポリイミド系樹脂を用いることが好ま
しい。さらに、絶縁性フィルム1の厚みは転写形成する
半田バンプ量(体積)に応じて任意に選択することがで
きる。
The insulating film 1 has electrical insulation and may be heat resistant at a temperature at which the solder to be held melts. Specifically, thermosetting resins such as polyester resin, epoxy resin, urethane resin, polystyrene resin, polyethylene resin, polyamide resin, polyimide resin, ABS resin, polycarbonate resin, silicone resin, and fluorine resin. Any thermoplastic resin can be used. Among these resins, a resin having transparency is preferable from the viewpoint of ease of alignment when transferring the solder bumps, and a polyimide resin is preferably used from the viewpoint of heat resistance and mechanical strength. Further, the thickness of the insulating film 1 can be arbitrarily selected according to the amount (volume) of solder bumps to be transferred and formed.

【0012】図2は本発明の複合フィルムの他の実例を
示す拡大断面図であり、絶縁性フィルム1に保持する半
田2をフィルムの表裏面に突出させたものである。突出
形状は所謂リベット状である。このように形成すること
によって、本発明の複合フィルムから使用前に半田が脱
落することを防止することができる。
FIG. 2 is an enlarged sectional view showing another example of the composite film of the present invention, in which the solder 2 held on the insulating film 1 is projected on the front and back surfaces of the film. The protruding shape is a so-called rivet shape. By forming in this way, it is possible to prevent the solder from falling off from the composite film of the present invention before use.

【0013】図3は本発明の複合フィルムの他の実例を
示す拡大断面図である。絶縁性フィルム1の片面に支持
層としての金属層3が形成され、該金属層3は保持され
ている半田2が脱落しないように作用している。この金
属層3は半田2を溶融転写する際に半田2のみが転写す
るように半田と溶融混合しない材質が好ましく、また半
田に対して濡れ性が悪い金属から形成することが好まし
い。このような金属としては、例えばニッケルやクロム
などが挙げられる。
FIG. 3 is an enlarged sectional view showing another example of the composite film of the present invention. A metal layer 3 as a support layer is formed on one surface of the insulating film 1, and the metal layer 3 acts so that the held solder 2 does not drop off. The metal layer 3 is preferably made of a material that does not melt and mix with the solder so that only the solder 2 is transferred when the solder 2 is melt-transferred, and is preferably formed of a metal having poor wettability with respect to the solder. Examples of such a metal include nickel and chromium.

【0014】図4は図1に示す本発明の複合フィルムを
用いた半田バンプ形成方法の一実例を示す断面図であ
る。
FIG. 4 is a sectional view showing an example of a solder bump forming method using the composite film of the present invention shown in FIG.

【0015】図4(A)に示すように本発明の複合フィ
ルムにおける半田2の突出部を、被着体として例えば、
外部回路4上の電極部5に位置合わせ、接触させる。こ
の際、位置合わせを正確に行なうために、本発明の複合
フィルムにはアライメント孔や治具孔を設けておくこと
が好ましい。電極部5の表面には半田に対して濡れ性が
良好な金属(例えば、金)で被覆しておくと、高精度に
半田バンプが形成できるので好ましい。次いで、ホット
プレートや加熱炉によって本発明の複合フィルムを加熱
することによって、絶縁性フィルム1内に保持されてい
る半田2が溶融し、被着体(電極部5)に転写され、図
4(B)に示すような略球状の半田バンプ12(半田ボ
ール)が被着体上に形成されるのである。なお、被着体
として外部回路5の代わりに半導体素子を用いても同様
である。
As shown in FIG. 4A, the protrusion of the solder 2 in the composite film of the present invention is used as an adherend, for example,
The electrode portion 5 on the external circuit 4 is aligned and brought into contact. At this time, it is preferable to provide an alignment hole or a jig hole in the composite film of the present invention in order to perform the alignment accurately. It is preferable to coat the surface of the electrode portion 5 with a metal (for example, gold) having a good wettability with respect to the solder, because the solder bump can be formed with high precision. Next, by heating the composite film of the present invention with a hot plate or a heating furnace, the solder 2 held in the insulating film 1 is melted and transferred to the adherend (electrode part 5), and the soldering is performed as shown in FIG. The substantially spherical solder bumps 12 (solder balls) as shown in B) are formed on the adherend. The same applies when a semiconductor element is used as the adherend instead of the external circuit 5.

【0016】図5は図1に示す本発明の複合フィルムを
得るための各製造工程を示す拡大断面図である。
FIG. 5 is an enlarged sectional view showing each manufacturing process for obtaining the composite film of the present invention shown in FIG.

【0017】図5(A)のような銅箔や銅板などからな
る金属層3の上に絶縁性フィルム1を設けた積層フィル
ムの絶縁性フィルム1のみに、機械的加工やレーザー加
工、光加工、化学エッチングなどによって図5(B)に
示すような金属層3表面に達する孔部6を形成する。孔
部6の形成方法としては、微細加工性や加工形状の自由
度などの点から発振波長が紫外領域にあるエキシマレー
ザーの如き紫外線レーザーを用いることが好ましい。
Only the insulating film 1 of the laminated film in which the insulating film 1 is provided on the metal layer 3 made of a copper foil or a copper plate as shown in FIG. 5A is mechanically processed, laser processed, or light processed. A hole 6 reaching the surface of the metal layer 3 as shown in FIG. 5B is formed by chemical etching or the like. As a method of forming the holes 6, it is preferable to use an ultraviolet laser such as an excimer laser having an oscillation wavelength in the ultraviolet region from the viewpoints of fine workability and the degree of freedom of the processed shape.

【0018】次に、金属層3を電極として電解メッキを
行なって、図5(C)に示すように形成した孔部6に半
田2を充填する。このとき、半田2のメッキ充填は絶縁
性フィルム1の表面から突出するまで行なう。半田2の
突出形状や大きさは転写形成するバンプ形状や被着体の
電極部の大きさによって適宜設定することができる。ま
た、転写形成する半田バンプの大きさ(体積)は孔部6
の大きさや絶縁性フィルム1の厚みによって調整するこ
とができる。
Next, electrolytic plating is performed using the metal layer 3 as an electrode to fill the solder 2 in the hole 6 formed as shown in FIG. 5 (C). At this time, the plating of the solder 2 is performed until it projects from the surface of the insulating film 1. The protruding shape and size of the solder 2 can be appropriately set depending on the bump shape to be transferred and the size of the electrode portion of the adherend. Further, the size (volume) of the solder bump to be transferred and formed is equal to that of the hole portion 6.
Can be adjusted according to the size of the film and the thickness of the insulating film 1.

【0019】最後に必要に応じて金属層3を公知のエッ
チング処理によって除去して図5(D)に示す本発明の
複合フィルムを得ることができる。こののち、前記した
アライメント孔や治具孔を機械加工やレーザー加工、光
加工、化学エッチング加工などによって設けてもよい。
なお、金属層3を除去しない場合は、図3に示す構造の
複合フィルムを得ることができる。
Finally, if necessary, the metal layer 3 can be removed by a known etching treatment to obtain the composite film of the present invention shown in FIG. 5 (D). After that, the above-mentioned alignment holes and jig holes may be provided by mechanical processing, laser processing, optical processing, chemical etching processing, or the like.
In addition, when the metal layer 3 is not removed, the composite film having the structure shown in FIG. 3 can be obtained.

【0020】図6は図2にて示す本発明の他の複合フィ
ルムを得るための各製造工程を示す拡大断面図である。
FIG. 6 is an enlarged sectional view showing each manufacturing process for obtaining another composite film of the present invention shown in FIG.

【0021】図6(A)および(B)は図5(A)およ
び(B)と同じ工程であり、図6(D)および(E)は
図5(C)および(D)と同じ工程である。図6の製造
方法では図6(C)の工程の追加に特徴を有し、孔部6
を絶縁性フィルム1に形成したのち、電解腐食や研磨な
どによって露出する金属層3の表面に図示するような凹
部(例えば、半球状)を形成する。このように加工する
ことによって、最終的に得られる複合フィルムに保持さ
れる半田は両面に突出した形状となる。
6A and 6B are the same steps as FIGS. 5A and 5B, and FIGS. 6D and 6E are the same steps as FIGS. 5C and 5D. Is. The manufacturing method of FIG. 6 is characterized by the addition of the step of FIG.
Is formed on the insulating film 1, and then a recess (for example, a hemisphere) as shown in the drawing is formed on the surface of the metal layer 3 exposed by electrolytic corrosion or polishing. By processing in this manner, the solder retained in the finally obtained composite film has a shape protruding on both sides.

【0022】[0022]

【発明の効果】以上のように本発明の複合フィルムは、
所望の大きさでバンプ用の半田を溶融離脱可能に保持し
ているので、高密度な半導体素子の電極部や電気部品や
電気回路などに精度よく、しかも容易に半田バンプを転
写形成することができる。従って、従来の半田ペースト
印刷法と比べて狭ピッチの端子にも半田バンプを形成で
き、また転写する半田量にもバラツキが少ないものであ
る。
As described above, the composite film of the present invention is
Since the solder for bumps of a desired size is held so that it can be melted and removed, it is possible to transfer solder bumps accurately and easily to the electrodes of high-density semiconductor elements, electrical parts, electrical circuits, etc. it can. Therefore, as compared with the conventional solder paste printing method, solder bumps can be formed even on terminals with a narrow pitch, and the amount of transferred solder varies little.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明の複合フィルムの一実例を示す拡大断
面図である。
FIG. 1 is an enlarged cross-sectional view showing an example of a composite film of the present invention.

【図2】 本発明の複合フィルムの他の実例を示す拡大
断面図である。
FIG. 2 is an enlarged cross-sectional view showing another example of the composite film of the present invention.

【図3】 本発明の複合フィルムの他の実例を示す拡大
断面図である。
FIG. 3 is an enlarged cross-sectional view showing another example of the composite film of the present invention.

【図4】 本発明の複合フィルムを用いた転写バンプ形
成方法の一実例を示す拡大断面図である。
FIG. 4 is an enlarged cross-sectional view showing an example of a transfer bump forming method using the composite film of the present invention.

【図5】 (A)〜(D)は本発明の他の複合フィルム
を得るための各製造工程を示す拡大断面図である。
5A to 5D are enlarged cross-sectional views showing respective manufacturing steps for obtaining another composite film of the present invention.

【図6】 (A)〜(E)は本発明の他の複合フィルム
を得るための各製造工程を示す拡大断面図である。
6A to 6E are enlarged cross-sectional views showing respective manufacturing steps for obtaining another composite film of the present invention.

【符号の説明】[Explanation of symbols]

1 絶縁性フィルム 2 半田 3 金属層 4 外部回路 5 電極部 6 孔部 12 半田バンプ 1 Insulating Film 2 Solder 3 Metal Layer 4 External Circuit 5 Electrode Section 6 Hole Section 12 Solder Bump

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 絶縁性フィルムの表裏面に貫通し、かつ
少なくとも一方の面から突出するようにバンプ用の半田
を溶融離脱可能な状態で保持してなる複合フィルム。
1. A composite film that holds solder for bumps in a meltable and detachable state so as to penetrate the front and back surfaces of an insulating film and project from at least one surface.
【請求項2】 絶縁性フィルムの片面に金属層が形成さ
れている請求項1記載の複合フィルム。
2. The composite film according to claim 1, wherein a metal layer is formed on one surface of the insulating film.
【請求項3】 半導体素子または電気回路、もしくは電
気回路部品上に請求項1記載の複合フィルムを位置さ
せ、突出しているハンダ部を被転写部に接触させたの
ち、加熱することによって保持されたハンダを溶融転写
することを特徴とする半田バンプ形成方法。
3. The composite film according to claim 1 is placed on a semiconductor element, an electric circuit, or an electric circuit component, and the projecting solder portion is brought into contact with the transferred portion and then held by heating. A method for forming solder bumps, which comprises melting and transferring solder.
JP4152849A 1991-11-28 1992-05-19 Composite film and formation of solder bump using the same Pending JPH05326526A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP4152849A JPH05326526A (en) 1992-05-19 1992-05-19 Composite film and formation of solder bump using the same
EP19920120222 EP0544305A3 (en) 1991-11-28 1992-11-26 Method of forming a contact bump using a composite film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4152849A JPH05326526A (en) 1992-05-19 1992-05-19 Composite film and formation of solder bump using the same

Publications (1)

Publication Number Publication Date
JPH05326526A true JPH05326526A (en) 1993-12-10

Family

ID=15549477

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4152849A Pending JPH05326526A (en) 1991-11-28 1992-05-19 Composite film and formation of solder bump using the same

Country Status (1)

Country Link
JP (1) JPH05326526A (en)

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