JPH05308207A - High frequency semiconductor package - Google Patents

Abstract

PURPOSE:To obtain a desired high frequency characteristic by making a slit-like cut to a conductor on a dielectric board for the package. CONSTITUTION:In order to connect a bonding wire 4A connecting to an electrode of a semiconductor chip 4 and a lead wire 6 of the semiconductor package, a metallized conductor 3 is formed on a dielectric board 5. A slit-like cut is made in advance to the conductor 3 at two positions or over longer than a half of the width of the conductor 3 and the cuts 1 are arranged in parallel alternately so as not to be overlapped. The cuts 1 are provided to the electrode required in the electric characteristic and the quantity of the cut 1 is increased by using a laser cutter while measuring the high frequency characteristic in this state and the cutting is stopped when the desired high frequency characteristic is obtained. Then the high frequency semiconductor element in the package whose high frequency characteristic is arranged is obtained flexibly.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor package, and more particularly to a high frequency semiconductor package.

[0002]

2. Description of the Related Art A conventional high frequency semiconductor package structure has a lead wire 56 connected to a conductor 53 metallized on a dielectric substrate 55, and a semiconductor chip 54 is attached to the conductor 53, as shown in FIG. The electrodes are connected via the bonding wires 54 to connect the semiconductor electrodes to the lead wires 56. Then, a cap 57 is put on the semiconductor chip 54 to protect the semiconductor.

[0003]

However, in the conventional package structure, the high-frequency characteristics of the semiconductor chip 54 and the high-frequency characteristics of the package are combined to make the characteristics appear.
Therefore, if the high-frequency characteristics of either the semiconductor chip 54 or the package fluctuates, it means that the characteristics as a whole fluctuate, and the characteristics of the high-frequency circuit using this element as a packaged semiconductor individually change. There is an inconvenience that such a variation greatly hinders the production of electronic devices and the like.

[0004]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a high-frequency semiconductor package which has the above-mentioned disadvantages in the prior art and which has flexibility and can be adjusted to desired high-frequency characteristics. .

[0005]

According to the present invention, in a package in which a semiconductor chip is mounted on a dielectric substrate and the semiconductor chip is covered with a cap, slits are formed in a conductor on the dielectric substrate. The composition is adopted. This is intended to achieve the above-mentioned object.

[0006]

[Function] By making slit-like cuts in the conductor on the dielectric substrate that constitutes the package, it is possible to adjust the amount of inductance of the lead wire of the semiconductor package, and the high frequency is achieved when the semiconductor chip is mounted on the package. By adjusting the slit amount while measuring the characteristics, it is possible to provide a packaged semiconductor element having uniform high frequency characteristics.

[0007]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a perspective view of a microwave semiconductor package according to an embodiment of the present invention. In this figure, the structure inside the cap 7 is the same as that of the conventional product, and is metallized on the dielectric substrate 5 in order to connect the bonding wire connected to the electrode of the semiconductor chip and the lead wire 6 of the semiconductor package. The conductor 3 is formed.
The conductor 3 has a slit-shaped cut 1 in advance.
There are two or more places that are slightly longer than half the width of
Moreover, the notches 1 are alternately arranged so as not to overlap each other. The notch 1 is provided on the electrode required for electrical characteristics, and while measuring the high frequency characteristic in this state, the amount of the notch 1 is increased with a laser cutter or the like, and the high frequency characteristic becomes the desired characteristic. By the way, stop it. Just do it. As a result, a packaged high-frequency semiconductor element with uniform high-frequency characteristics can be obtained flexibly.

[0009]

As described above, according to the above-described structure of the present invention, since the amount of notch formation can be adjusted so that the high frequency characteristics are matched stepwise, the high frequency semiconductor having uniform high frequency characteristics. It is possible to provide a package that can provide an element, which has an unprecedented excellent effect.

[Brief description of drawings]

FIG. 1 is a perspective view of an entire high frequency semiconductor package showing an embodiment of the present invention.

FIG. 2 (A) is a perspective view showing a conventional example, showing a state before capping to show the internal structure, and FIG. 2 (B).
FIG. 3 is a diagram showing a state after the cap is capped from the state of FIG. 2 (A).

[Explanation of symbols]

 1 notch 2 bonding wire 3 conductor 4 semiconductor chip 5 dielectric substrate 7 cap

Claims (1)

[Claims] 1. A semiconductor chip is mounted on a dielectric substrate,
A high-frequency semiconductor package in which a slit-shaped notch is provided in a conductor on the dielectric substrate in a package which covers the semiconductor chip with a cap.