JPH05283540A - Semiconductor device - Google Patents

Abstract

PURPOSE:To protect a protective insulation film surrounding a wiring conductor film against cracking and to prevent the wiring conductor from shifting by forming irregularities on the surfaces of the wiring conductor film and the protective insulation film thereby enhancing stress resistance. CONSTITUTION:A plurality of slits 27 are made in a second interlayer insulation film beneath a second wiring conductor film 14 formed in a region 25 adjacent to a corner of a semiconductor device and irregularities are provided on the surfaces of the second wiring conductor film 14 and a protective insulation film in the region 25 adjacent to a corner. Since stress of resin, which is conventionally concentrated at the edge of the second wiring conductor film 14 on the periphery of semiconductor device, is distributed to a plurality of protrusions, stress resistance is enhanced and the protective insulation film is protected against cracking. Furthermore, the second wiring conductor film 14 in the region 25 adjacent to a corner of semiconductor device is prevented from shifting.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device of resin encapsulation type, and more particularly to a semiconductor device having a structure in which stress resistance of a conductor film for wiring arranged in a corner adjacent region is improved.

[0002]

2. Description of the Related Art FIG. 5 is a plan view showing an essential part of an example of a conventional semiconductor device of this type, and an enlarged sectional view taken along line CC 'of FIG.

A semiconductor element region 11 is formed on one main surface of a semiconductor substrate 10, and a conductor film 12 for internal wiring of a semiconductor device such as aluminum and a first wiring in the peripheral portion of the semiconductor device are formed via a first interlayer insulating film 21. Forming a conductive film 13 for wiring, and then forming a conductive film 14 for a second wiring in the peripheral portion of the semiconductor such as aluminum, including a bonding pad part 18, with a second interlayer insulating film 22 interposed therebetween. After being covered with a protective insulating film 23 such as a ride film, only the bonding pad portion 18 is etched and exposed.

Finally, the semiconductor device is resin-sealed.

[0005]

In such a conventional semiconductor device, for example, when a temperature cycle test of + 150 ° C. to −65 ° C. is performed, stress is generated due to expansion and contraction of the resin, and an arrow in FIG. As shown in, a large stress is applied to the second wiring conductor film 14 around the semiconductor device.

At this time, with the recent resin encapsulation of large chips, when a large chip having a chip size of more than 15 mm □ is resin-encapsulated and the temperature cycle test is performed, the semiconductor device is subjected to the above-mentioned stress. A crack is generated in the protective insulating film 23 surrounding the second wiring conductor film 14 in the peripheral portion, and further, as shown in the model diagram of the aluminum slide in FIG. Has a tendency that the movement width of the wiring is large, cracks in the protective insulating film 23 in the peripheral portion of the semiconductor device in the corner adjacent region 25, and displacement (movement) 26 of the second wiring conductor film 14 occur. However, there is a drawback that reduces the reliability of the wiring.

An object of the present invention is to achieve a highly reliable semiconductor device which eliminates the above-mentioned drawbacks to prevent cracks in the protective insulating film and shifts in the wiring conductor film due to the stress of the sealing resin. To provide.

[0008]

According to the present invention, there is provided a protective insulating film, a wiring conductor film provided in contact with the lower surface of the protective insulating film, and a lower surface of the wiring conductor film. In a semiconductor device having an interlayer insulating film, the protective insulating film, the wiring conductor film, and the interlayer insulating film provided in a region adjacent to at least a corner region of the semiconductor device are provided on their upper surfaces. It is characterized by having an uneven portion.

Further, according to the present invention, it is preferable that the concave-convex portion follows a concave portion provided on the upper surface of the interlayer insulating film.

[0010]

According to the semiconductor device of the present invention, the semiconductor device is arranged along each side of the semiconductor device in a region extending from the corner region of the conductor film for wiring arranged in the periphery thereof toward the center of each side and adjacent to the corner region. In addition, the interlayer insulating film below the wiring conductor film has a structure in which, for example, slits or a plurality of wells that do not penetrate to the bottom are provided as recesses, and the wiring conductor film and the protective insulating film have uneven shapes. There is.

Therefore, the stress due to the sealing resin is conventionally received only by the convex portion of the wiring conductor film edge, but it is received by the plurality of convex portions in a dispersed manner, and the stress resistance is improved. However, it is possible to prevent the generation of cracks in the protective insulating film and the displacement of the wiring conductor film in the area adjacent to the corner.

[0012]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a plan view showing an essential part of a first embodiment of the present invention, and FIG. 2 is an enlarged sectional view taken along the line AA '.

In the first embodiment, the protective insulating film 23, the second wiring conductor film 14 provided in contact with the lower surface of the protective insulating film 23, and the lower surface of the second wiring conductor film 14 are provided. Second interlayer insulating film 22, first wiring conductor film 13, first interlayer insulating film 21, field oxide film 20
And a semiconductor substrate 10. In a semiconductor device having a semiconductor substrate 10, a protective insulating film 23, which is provided as a feature of the present invention, including a corner adjacent region 25 adjacent to the corner region 24 of the semiconductor device, The wiring conductor film 14 and the second interlayer insulating film 22 have a plurality of concave and convex portions that follow the slits 27 as concave portions provided on the upper surface of the second interlayer insulating film 22.

Next, an outline of the manufacturing method of the first embodiment will be described.

First, a field oxide film 20 and a semiconductor element region 11 having a film thickness of 1.0 μm, for example, are formed on one main surface of the semiconductor substrate 10, and then a phosphosilicate glass film having a film thickness of 1.0 μm, for example. The first interlayer insulating film 21 is formed, and then the conductor film 12 for internal wiring such as aluminum having a film thickness of 0.5 μm and the conductor film 13 for first wiring around the semiconductor device are formed.

Next, after growing a second interlayer insulating film 22 such as a plasma oxide film having a thickness of 1.2 μm, a through hole 16 is formed. Next, the slit 27 is formed in the second interlayer insulating film 22.

A slit 27 is formed in the second interlayer insulating film 22.
In forming the through holes 16, after forming the through holes 16, a photoresist pattern for forming the slits 27 of the second interlayer insulating film 22 is formed in a portion of the second wiring conductor film 14 in the peripheral portion of the semiconductor device which will be formed later. Etching removal is performed by reactive ion etching to a thickness of 0.5 to 0.6 μm to form a residual film thickness of 0.7 to 0.6 μm. Then, the photoresist pattern is removed.

Next, a conductor film 14 for the second wiring such as aluminum having a film thickness of 1.0 μm in the peripheral portion of the semiconductor device is formed to protect the phosphosilicate glass and the silicon nitride film having a film thickness of 1.0 μm. After covering with the insulating film for use 23, only the bonding pad portion 18 is etched and exposed to obtain a desired structure.

In recent years, molding of large chips has progressed, and FIG.
As shown in the aluminum slide model diagram, the wiring conductor film is significantly displaced in the corner adjacent region 25 of the semiconductor device, and a countermeasure against it has been required. Therefore, as in this embodiment, for example, a slit of an interlayer insulating film having a slit width of 5 μm and a slit interval of 10 μm is formed in the second interlayer insulating film 22 below the second wiring conductor film 14 in the corner adjacent region 25 of the semiconductor device. By providing a plurality of concave and convex shapes in the second wiring conductor film 14 and the protective insulating film 23 in the corner area adjacent portion 25, the stress due to the resin is conventionally applied to the second wiring conductor film in the peripheral portion of the semiconductor device. What is received only by the convex portions of the edges of 14 is dispersed and received by the plural convex portions, so that the stress resistance is improved and the protective insulating film 2
It is possible to prevent the occurrence of cracks in No. 3 and to prevent the occurrence of misalignment 26 of the second wiring conductor film 14 in the corner adjacent region 25 of the semiconductor device.

The above description has been made with reference to the corner area adjoining portion of the semiconductor device having the two-layer wiring structure. The present invention can be similarly applied to the protective insulating film, the uppermost wiring conductor film, and the interlayer insulating film below the uppermost wiring conductor film that are arranged.

FIG. 3 is a plan view showing an essential part of the second embodiment of the present invention, and FIG. 4 is an enlarged sectional view taken along the line BB '.

The second embodiment is similar to the first embodiment shown in FIGS. 1 and 2 in that instead of slits, which are the features of the present invention, instead of slits, for example, 10 μm × 10 μm.
Well 28 that does not penetrate below the interlayer insulating film of size m
Since a plurality of slits are provided, the same stress resistance as the slit can be obtained.

[0024]

As described above, according to the present invention, the insulating film below the conductor film for wiring formed in the corner adjacent region of the peripheral portion of the semiconductor substrate via the insulating film is used as a recess, for example, as a slit or to the bottom. By providing a plurality of wells that do not penetrate and providing uneven shapes on the wiring conductor film and the protective insulating film, the stress due to the resin is dispersed and received by the plurality of protrusions, which improves the stress resistance. Further, it is possible to prevent the occurrence of cracks in the protective insulating film surrounding the conductor film for wiring and the shift of the conductor film for wiring, and it is possible to remarkably improve the reliability of the wiring.

[Brief description of drawings]

FIG. 1 is a plan view showing a main part of a first embodiment of the present invention.

FIG. 2 is an enlarged sectional view taken along the line AA ′ of FIG.

FIG. 3 is a plan view showing a main part of a second embodiment of the present invention.

FIG. 4 is an enlarged cross-sectional view taken along the line BB ′ of FIG.

FIG. 5 is a plan view showing a main part of a conventional example.

6 is an enlarged sectional view taken along the line CC ′ of FIG.

FIG. 7 is a model diagram of an aluminum slide.

[Explanation of symbols]

 10 semiconductor substrate 11 semiconductor element region 12 conductor film for internal wiring 13 conductor film for first wiring 14 conductor film for second wiring 16 through hole 17 contact hole 18 bonding pad portion 20 field oxide film 21 first interlayer insulating film 22 Two-layer insulating film 23 Protective insulating film 24 Corner region 25 Corner adjacent region 26 Deviation 27 Slit 28 Well

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification code Office reference number FI technical display location H01L 23/31

Claims (2)

[Claims] 1. A semiconductor comprising a protective insulating film, a wiring conductor film provided in contact with the lower surface of the protective insulating film, and an interlayer insulating film provided in contact with the lower surface of the wiring conductor film. In the device, the protective insulating film, the wiring conductor film, and the interlayer insulating film provided in at least a region adjacent to a corner region of the semiconductor device have uneven portions provided on their upper surfaces. Semiconductor device. 2. The semiconductor device according to claim 1, wherein the uneven portion follows a concave portion provided on the upper surface of the interlayer insulating film.