JPH05269371A - Plasma processing device - Google Patents

Abstract

PURPOSE:To improve the etching characteristic by providing a port for supplying a processing gas close to a sample holder on which a sample is arranged in a treating chamber and furnishing a port for evacuating the treating chamber on the sample side of the holder and away from the supply port. CONSTITUTION:A processing gas is supplied into a treating chamber 10 which is evacuated to a specified low pressure, the processing gas is converted to plasma, and a sample 15 is treated. In this case, a port 12 is provided to supply a processing gas close to a sample holder 14 in the chamber 10 on which the sample 15 is arranged, and a port 13 is furnished to the chamber 10 on the sample 15 side of the holder 14 and away from the supply port 12 to evacuate the chamber 10. Consequently, since the reaction product of the sample is vertically discharged from above the sample, the reaction product is not moved on the sample in a certain direction, the density of the reaction product is uniformized on the sample, and the plasma treating characteristic is improved.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus.

[0002]

2. Description of the Related Art A conventional device is disclosed in, for example, Japanese Patent Laid-Open No. 26-3.
As described in Japanese Patent No. 7311, the processing gas is supplied from above the sample in the processing chamber, and the inside of the processing chamber is exhausted from below the sample.

[0003]

In the above-mentioned prior art, the etching process is performed by converting the processing gas into plasma under a low pressure vacuum. The reaction product generated by the treatment is discharged from the periphery of the sample to the lower part of the sample.For example, the reaction product generated in the central part of the sample moves in a limited space on the sample. While being discharged from around the sample. Therefore, the reaction product in the central portion of the sample affects the etching treatment characteristics of the entire sample.

An object of the present invention is to discharge the reaction product of the sample in the vertical direction from above the sample, to prevent the reaction product from moving on the sample in a certain direction, and to improve the etching treatment characteristics. Another object of the present invention is to provide a plasma processing apparatus capable of performing the above.

[0005]

In order to achieve the above object, in a plasma processing apparatus for supplying a processing gas into a processing chamber, decompressing and exhausting at a predetermined low pressure, and plasmatizing the processing gas to process a sample, A supply port for supplying a processing gas is provided near the sample table in the processing chamber where the sample is placed, and an exhaust port is provided on the sample mounting side of the sample table in the processing chamber for exhausting the processing chamber away from the supply port. Is.

[0006]

[Operation] A processing gas is introduced from a supply port provided in the vicinity of the sample table in the processing chamber to generate plasma in the processing chamber, and a vacuum is exhausted from a position apart from the supply port on the sample arrangement side of the sample table in the processing chamber. The reaction product that reacted with the sample is
The plasma processing characteristics of the sample are improved because the sample is quickly discharged above the sample table and a new processing gas is constantly supplied near the sample table in the processing chamber to generate new plasma over the entire sample processing surface.

[0007]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIG. A sample table 14 for disposing a sample 15 is provided below the processing chamber 10. In this case, above the processing chamber 10, in addition to forming the inside of the processing chamber 10 as an airtight container, a quartz window 11 for introducing a microwave is provided.
A magnetic field coil 16 is provided outside the processing chamber 10 to form a magnetic field inside the processing chamber. A supply port 12 for supplying a processing gas is provided in the vicinity of the sample table 14, and is located at a position apart from the supply port 12 on the sample processing surface side, that is, below the quartz window 11 above the processing chamber 10. An exhaust port 13 for evacuating the inside of the processing chamber 10 is provided on the side. Processing room 10
In this case, around the exhaust port 13 inside, the exhaust regulator 19
Is provided so that the gas flow is vertical and uniform with respect to the sample processing surface. A waveguide 17 for guiding microwaves is provided above the quartz window 11, and the waveguide 1
A magnetron 18 for generating microwaves is provided at the tip of 7.

In the apparatus constructed as described above, the processing gas is supplied into the processing chamber 10 by the processing gas supply apparatus (not shown) from the supply port 12, and the processing gas is processed by the vacuum exhaust apparatus (not shown) from the exhaust port 13. The inside of the chamber 10 is evacuated to a predetermined pressure. Next, an electromagnetic wave generated by the magnetron 18 and having a frequency of 2.45 GHz, for example, is guided to the waveguide 17 and introduced into the processing chamber 10 through the quartz window 11 and a magnetic field provided by the magnetic field coil 16. A plasma is formed in the processing chamber 10 due to the interaction of the fields. Reaction products generated on the sample 15 by the plasma treatment are exhausted in a direction perpendicular to the sample 15 by the exhaust controller 19. The sample adjuster 19 is made of a metal such as aluminum, which causes a microwave electric field to be electroplated on the sample 15 and has an exhaust port 13 having a large opening.
It shall also have the role of preventing the leakage of microwaves. Further, the exhaust direction and the exhaust velocity distribution can be achieved by changing the opening area of the exhaust regulator.

According to this embodiment, since the reaction product can be exhausted above the sample, the reaction product generated by the plasma treatment can be removed from the periphery of the sample in a limited space on the surface of the sample as in the prior art. Exhaust gas is not discharged in a specific direction, the presence or mixture of reaction products is eliminated, the production density of reaction products becomes uniform on the sample, and plasma processing performance can be improved.

Next, a second embodiment of the present invention will be described with reference to FIG. Below the processing chamber 20, a sample table 24 for placing a sample 25 is provided. In this case, on the side wall of the processing chamber 20, the inside of the processing chamber 20 is formed as an airtight container, and a quartz window 21 for introducing a microwave is provided. A supply port 22 for supplying a processing gas is provided in the vicinity of the sample table 14, and the inside of the processing chamber 20 is located above the processing chamber 20 at a position apart from the supply port 22 on the sample processing surface side. An exhaust port 23 for vacuum exhaust is provided. In this case, an exhaust regulator 28 is provided between the exhaust port 23 and the supply port 22 in the processing chamber 20 so that the gas flow is vertical and uniform with respect to the sample processing surface. A waveguide 26 for guiding microwaves through the quartz window 11 is provided on the sidewall of the processing chamber 20, and a magnetron 2 for generating microwaves is provided at an end of the waveguide 26.
7 is provided.

In the apparatus configured as described above, a processing gas supply device (not shown) supplies the processing gas from the supply port 22 to the periphery of the sample 25 in the processing chamber 20, and the exhaust port 2
A processing chamber 20 is provided by a vacuum exhaust device (not shown in FIG. 3).
The inside is evacuated to a predetermined pressure. Next, magnetron 27
For example, a microwave having a frequency of 2.45 GHz oscillated from the waveguide is guided to the waveguide 26 and is introduced into the processing chamber 20 by the quartz window 2
1 is introduced and the processing gas in the processing chamber 10 is turned into plasma. The reaction product generated on the sample 25 by the plasma treatment is exhausted in a direction perpendicular to the sample 25 by the exhaust controller 28.

According to the second embodiment, since the reaction product can be evacuated above the sample as in the case of the above-mentioned one embodiment, the reaction product does not exist or is not mixed, and the production density of the reaction product is above the sample. It becomes uniform and the plasma processing performance can be improved.

[0013]

According to the present invention, since the reaction product of the sample can be discharged vertically from the sample, the reaction product does not move in a certain direction on the sample, and the reaction product There is an effect that the generation density becomes uniform on the sample, and the etching treatment characteristics can be improved.

[Brief description of drawings]

FIG. 1 is a configuration diagram showing a plasma processing apparatus that is an embodiment of the present invention.

FIG. 2 is a configuration diagram showing a plasma processing apparatus that is a second embodiment of the present invention.

[Explanation of symbols]

10, 20 ... Processing chamber, 12, 22 ... Supply port, 13, 23
… Exhaust ports, 14, 24… Sample stand.

Claims (1)

[Claims] 1. A plasma processing apparatus for processing a sample by supplying a processing gas into a processing chamber and exhausting the gas under reduced pressure of a predetermined low pressure to process the sample into plasma, and a sample in which the sample in the processing chamber is arranged. A supply port for supplying the processing gas is provided in the vicinity of the table, and an exhaust port for exhausting the processing chamber is provided on the sample arrangement side of the sample table in the processing chamber away from the supply port. Plasma processing equipment.