JPH05267224A - Dryetching system - Google Patents
Dryetching systemInfo
- Publication number
- JPH05267224A JPH05267224A JP6291492A JP6291492A JPH05267224A JP H05267224 A JPH05267224 A JP H05267224A JP 6291492 A JP6291492 A JP 6291492A JP 6291492 A JP6291492 A JP 6291492A JP H05267224 A JPH05267224 A JP H05267224A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- vacuum chamber
- pressure gauge
- gauge
- gauges
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001312 dry etching Methods 0.000 title claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 238000012544 monitoring process Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 6
- 230000002159 abnormal effect Effects 0.000 abstract description 3
- 230000006866 deterioration Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 6
- 230000005856 abnormality Effects 0.000 description 5
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、反応性ガスを真空室に
導入し、一定の圧力で半導体基板をエッチングするドラ
イエッチング装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dry etching apparatus for introducing a reactive gas into a vacuum chamber and etching a semiconductor substrate at a constant pressure.
【０００２】[0002]
【従来の技術】図３は従来のドライエッチング装置の一
例における構成を示す図である。従来のドライエッチン
グ装置は、図３に示すように半導体基板を収納する真空
室４と、この真空室４を排気する真空ポンプ７と、真空
になった真空室４に流入する反応性ガスの流量を制御す
るガス流量制御器１、２及び３と、真空室４の圧力を検
出する圧力計８と、この圧力計８の圧力と設定した圧力
と比較して圧力調整器５の開口を調整する圧力制御部６
及び装置制御部１１とで構成されていた。2. Description of the Related Art FIG. 3 is a diagram showing a configuration of an example of a conventional dry etching apparatus. As shown in FIG. 3, a conventional dry etching apparatus includes a vacuum chamber 4 for accommodating a semiconductor substrate, a vacuum pump 7 for evacuating the vacuum chamber 4, and a flow rate of a reactive gas flowing into the vacuum chamber 4 in a vacuum state. Gas flow controllers 1, 2 and 3 for controlling the pressure, a pressure gauge 8 for detecting the pressure in the vacuum chamber 4, and the opening of the pressure regulator 5 is adjusted by comparing the pressure of the pressure gauge 8 with the set pressure. Pressure control unit 6
And the device control unit 11.
【０００３】このドライエッチング装置の動作は、ま
ず、真空ポンプ７で真空室４を真空排気し、高真空状態
にする。次に、ガス流量制御器１，２，３より反応性ガ
スを導入する。そして圧力計８で真空室４の圧力を測定
し、設定された圧力値と比較しながら圧力調整器５を調
節して真空室４の圧力を一定に保つ。In the operation of this dry etching apparatus, first, the vacuum chamber 4 is evacuated by the vacuum pump 7 to be in a high vacuum state. Next, the reactive gas is introduced from the gas flow controllers 1, 2, and 3. Then, the pressure in the vacuum chamber 4 is measured by the pressure gauge 8, and the pressure in the vacuum chamber 4 is kept constant by adjusting the pressure regulator 5 while comparing it with the set pressure value.
【０００４】次に、高周波を印加し、プラズマ状態をつ
くり、半導体基板をエッチングする。このように圧力計
８で測定した真空室４の圧力を装置制御部１１に伝え、
設定した圧力になっているかどうかを判定していた。こ
のとき、もし圧力調整器５で圧力制御ができない場合
は、圧力計８で測定した圧力と設定された圧力が異なっ
ていることを装置制御部１１で異常と検知するようにな
っていた。Next, a high frequency is applied to form a plasma state, and the semiconductor substrate is etched. In this way, the pressure of the vacuum chamber 4 measured by the pressure gauge 8 is transmitted to the device control unit 11,
I was determining if the pressure was set. At this time, if the pressure regulator 5 cannot control the pressure, the device control unit 11 detects that the pressure measured by the pressure gauge 8 is different from the set pressure.
【０００５】[0005]
【発明が解決しようとする課題】この従来のドライエッ
チング装置では、一つの圧力計で測定した真空室の圧力
を圧力制御部に伝え、圧力調整器で真空室の圧力を一定
に保つとともに、装置制御部にも真空室の圧力を伝え、
設定された圧力になっているかどうかを判定していた。
しかしながら半導体基板上の薄膜をエッチングすること
により発生する反応生成物や、反応性ガスにより、圧力
計が汚染され劣化し易い。このため、しばしば真空室の
圧力が正確に測定できなくなることがある。また、この
場合には実際の圧力は異なった圧力を伝えるようにな
る。一方、圧力制御部や装置制御部は、圧力計の劣化を
検知する機能はなく、半導体基板のエッチングに異常を
発見することにより、初めて圧力計の異常が発見される
ことになる。さらに、この圧力計が劣化する時期には一
定としないので、交換時期を決めることが困難であっ
た。In this conventional dry etching apparatus, the pressure in the vacuum chamber measured by one pressure gauge is transmitted to the pressure control unit, and the pressure in the vacuum chamber is kept constant by the pressure regulator. The pressure of the vacuum chamber is also transmitted to the control unit,
I was determining if the pressure was set.
However, the reaction product generated by etching the thin film on the semiconductor substrate and the reactive gas are likely to contaminate and deteriorate the pressure gauge. Therefore, the pressure in the vacuum chamber often cannot be accurately measured. Also, in this case, the actual pressure will transmit a different pressure. On the other hand, the pressure control unit and the device control unit do not have the function of detecting the deterioration of the pressure gauge, and the abnormality of the pressure gauge is first discovered by detecting the abnormality in the etching of the semiconductor substrate. Furthermore, it is difficult to determine the replacement time because the pressure gauge is not constant when it deteriorates.
【０００６】本発明の目的は、圧力計の異常を速やかに
検知し、事前に処理出来るドライエッチング装置を提供
することである。An object of the present invention is to provide a dry etching apparatus capable of promptly detecting a pressure gauge abnormality and preliminarily treating it.
【０００７】[0007]
【課題を解決するための手段】本発明の第１のドライエ
ッチング装置は、半導体基板を収納する真空室と、この
真空室を真空排気する真空ポンプと、反応性ガスを前記
真空室に導入する流量を制御するガス流量制御器と、前
記真空室の圧力を測定する少くとも２つの圧力計と、前
記真空室から前記反応性ガスを排気する流量を調節する
圧力調整器とを備え、前記２つの圧力計の１つを前記圧
力調整器を制御するために使用し、残りの圧力計を前記
圧力計の監視用に使用することを特徴としている。According to a first dry etching apparatus of the present invention, a vacuum chamber for accommodating a semiconductor substrate, a vacuum pump for evacuating the vacuum chamber, and a reactive gas are introduced into the vacuum chamber. A gas flow rate controller for controlling a flow rate; at least two pressure gauges for measuring the pressure in the vacuum chamber; and a pressure regulator for adjusting the flow rate of exhausting the reactive gas from the vacuum chamber. It is characterized in that one of the two pressure gauges is used to control the pressure regulator and the remaining pressure gauges are used to monitor the pressure gauge.
【０００８】また、第２のドライエッチング装置は、前
記２つの圧力計とは別に圧力計をバルブを介して前記真
空室に取付けることを特徴としている。Further, the second dry etching apparatus is characterized in that a pressure gauge is attached to the vacuum chamber via a valve in addition to the two pressure gauges.
【０００９】[0009]
【実施例】次に本発明について、図面を参照して説明す
る。図１は、本発明のドライエッチング装置の一実施例
における構成を示す図である。このドライエッチング装
置は、図１に示すように、真空室４の圧力を検出する圧
力計８以外に圧力計８の圧力値が正しいか否かを監視す
る圧力計９を設けたことである。それ以外は従来例と同
じである。The present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing the configuration of an embodiment of the dry etching apparatus of the present invention. In this dry etching apparatus, as shown in FIG. 1, in addition to the pressure gauge 8 for detecting the pressure in the vacuum chamber 4, a pressure gauge 9 for monitoring whether or not the pressure value of the pressure gauge 8 is correct is provided. Otherwise, it is the same as the conventional example.
【００１０】次に、このドライエッチング装置の動作を
説明する。まず、従来例で説明したと同じように、真空
室４を真空排気した後に、それぞれ制御された反応性ガ
スを導入し、装置制御部１１で設定された圧力と圧力計
８で測定した圧力を圧力制御部６で比較し、圧力調整器
５で真空室４の圧力を一定に保つ。また、圧力計９で真
空室４の圧力を装置制御部１１に伝え、設定された圧力
になっているかどうかを判定する。もし、ここで圧力計
８が劣化した場合は、実際の圧力とは、異なった圧力に
真空室４の圧力が制御されるため、圧力計９から装置制
御部１１に伝えられる圧力は、設定された圧力とは、異
なった圧力になるので、装置制御部１１で異常が検知で
きる。また、圧力計９が劣化した場合は、真空室４の圧
力は、装置制御部１１で設定された圧力に制御されてい
るが、装置制御部１１に伝えられる圧力は、実際の圧力
とは、異なっているので、異常が検知できる。このよう
に同種の圧力計を少くとも２個取付け、比較して圧力値
に差があれば、ただちにいずれかの圧力計が異常である
ことが発見出来る。Next, the operation of this dry etching apparatus will be described. First, in the same manner as described in the conventional example, after the vacuum chamber 4 is evacuated, the controlled reactive gas is introduced, and the pressure set by the device control unit 11 and the pressure measured by the pressure gauge 8 are measured. The pressure controller 6 compares the pressure and the pressure regulator 5 keeps the pressure in the vacuum chamber 4 constant. Further, the pressure gauge 9 transmits the pressure in the vacuum chamber 4 to the apparatus control unit 11 and determines whether or not the set pressure is reached. If the pressure gauge 8 deteriorates here, the pressure in the vacuum chamber 4 is controlled to a pressure different from the actual pressure, so the pressure transmitted from the pressure gauge 9 to the device control unit 11 is set. Since the pressure is different from the above pressure, the device control unit 11 can detect an abnormality. Further, when the pressure gauge 9 deteriorates, the pressure in the vacuum chamber 4 is controlled to the pressure set by the device control unit 11, but the pressure transmitted to the device control unit 11 is equal to the actual pressure. Since they are different, an abnormality can be detected. In this way, if at least two pressure gauges of the same type are attached and there is a difference in the pressure values by comparison, it can be immediately discovered that one of the pressure gauges is abnormal.
【００１１】図２は本発明のドライエッチング装置の他
の実施例における構成を示す図である。このドライエッ
チング装置は、図２に示すように、二つの圧力計８及び
９以外に圧力計１０を追加して設け、この圧力計１０を
真空室４にバルブ１２を介して取付けたことである。FIG. 2 is a diagram showing the construction of another embodiment of the dry etching apparatus of the present invention. As shown in FIG. 2, this dry etching apparatus is provided with a pressure gauge 10 in addition to the two pressure gauges 8 and 9, and the pressure gauge 10 is attached to the vacuum chamber 4 via a valve 12. ..
【００１２】次に、このドライエッチング装置の動作に
ついて説明する。まずは反応ガスを真空室４に導入し、
装置制御部１１で設定された圧力と圧力計８で測定した
圧力を圧力制御部６で比較し、圧力調整器５で真空室４
の圧力を一定に保つ。また、圧力計で真空室４の圧力を
装置制御部１１に伝え、設定された圧力になっているか
どうかを判定する。さらに圧力計１０は、反応性ガスを
真空室４に導入している時は、バルブ１２を閉じ、導入
していない時は開けるようにし、反応性ガスや反応生成
物により劣化しないようにしておくことである。このこ
とは前述の実施例では圧力計が劣化した場合に、圧力計
８と圧力計９のどちらが劣化したかの判定ができなかっ
たが、圧力計１０を基準にすることにより、判定ができ
るという利点がある。Next, the operation of this dry etching apparatus will be described. First, the reaction gas is introduced into the vacuum chamber 4,
The pressure set by the device control unit 11 and the pressure measured by the pressure gauge 8 are compared by the pressure control unit 6, and the pressure regulator 5 is used by the vacuum chamber 4
Keep pressure constant. Further, the pressure of the vacuum chamber 4 is transmitted to the device control section 11 by a pressure gauge, and it is determined whether or not the set pressure is reached. Further, the pressure gauge 10 closes the valve 12 when the reactive gas is being introduced into the vacuum chamber 4 and opens the valve 12 when the reactive gas is not being introduced, so as not to deteriorate due to the reactive gas or reaction products. That is. This means that when the pressure gauge deteriorates in the above-described embodiment, it cannot be determined which of the pressure gauge 8 and the pressure gauge 9 has deteriorated, but the determination can be made by using the pressure gauge 10 as a reference. There are advantages.
【００１３】[0013]
【発明の効果】以上説明したように本発明は、真空室の
圧力を監視するための圧力計と真空室の圧力を圧力制御
部に伝え、圧力調整器を動作させ圧力を制御するための
圧力計とを設け、２つの圧力計の測定した圧力を比較す
ることにより、いずれかの圧力計が劣化したことを検知
できるとともに半導体基板が異常にエッチングされる前
に交換し得るという効果がある。As described above, according to the present invention, the pressure gauge for monitoring the pressure in the vacuum chamber and the pressure in the vacuum chamber are transmitted to the pressure control unit, and the pressure for operating the pressure regulator to control the pressure is controlled. By providing a pressure gauge and comparing the pressures measured by the two pressure gauges, it is possible to detect that one of the pressure gauges has deteriorated and to replace the semiconductor substrate before it is abnormally etched.
【図１】本発明のドライエッチング装置の一実施例にお
ける構成を示す図である。FIG. 1 is a diagram showing a configuration of an embodiment of a dry etching apparatus of the present invention.
【図２】本発明のドライエッチング装置の他の実施例に
おける構成を示す図である。FIG. 2 is a diagram showing the configuration of another embodiment of the dry etching apparatus of the present invention.
【図３】従来のドライエッチング装置の一例における構
成を示す図である。FIG. 3 is a diagram showing a configuration of an example of a conventional dry etching apparatus.
１，２，３ ガス流量制御器 ５ 圧力調整器 ６ 圧力制御部 ７ 真空ポンプ ８，９，１０ 圧力計 １１ 装置制御部 １２ バルブ 1, 2, 3 Gas flow controller 5 Pressure regulator 6 Pressure controller 7 Vacuum pump 8, 9, 10 Pressure gauge 11 Device controller 12 Valve
Claims (2)
空室を真空排気する真空ポンプと、反応性ガスを前記真
空室に導入する流量を制御するガス流量制御器と、前記
真空室の圧力を測定する少くとも２つの圧力計と、前記
真空室から前記反応性ガスを排気する流量を調節する圧
力調整器とを備え、前記２つの圧力計の１つを前記圧力
調整器を制御するために使用し、残りの圧力計を前記圧
力計の監視用に使用することを特徴とするドライエッチ
ング装置。1. A vacuum chamber for accommodating a semiconductor substrate, a vacuum pump for evacuating the vacuum chamber, a gas flow controller for controlling a flow rate of introducing a reactive gas into the vacuum chamber, and a pressure of the vacuum chamber. At least two pressure gauges and a pressure regulator for adjusting the flow rate of the reactive gas discharged from the vacuum chamber, one of the two pressure gauges for controlling the pressure regulator. And the remaining pressure gauge is used for monitoring the pressure gauge.
ブを介して前記真空室に取付けることを特徴とする請求
項１記載のドライエッチング装置。2. The dry etching apparatus according to claim 1, wherein a pressure gauge is attached to the vacuum chamber via a valve separately from the two pressure gauges.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4062914A JP2826409B2 (en) | 1992-03-19 | 1992-03-19 | Dry etching equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4062914A JP2826409B2 (en) | 1992-03-19 | 1992-03-19 | Dry etching equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05267224A true JPH05267224A (en) | 1993-10-15 |
| JP2826409B2 JP2826409B2 (en) | 1998-11-18 |
Family
ID=13214002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4062914A Expired - Fee Related JP2826409B2 (en) | 1992-03-19 | 1992-03-19 | Dry etching equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2826409B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100467813B1 (en) * | 2002-05-02 | 2005-01-24 | 동부아남반도체 주식회사 | Apparatus of warming for unstriping of photoresist and method of manufacturing for semiconductor device using the same |
| US7553773B2 (en) * | 1999-12-14 | 2009-06-30 | Tokyo Electron Limited | Pressure control method and processing device |
| JP2017167102A (en) * | 2016-03-18 | 2017-09-21 | 東京エレクトロン株式会社 | Pressure measuring device, exhaust system using the same, and substrate processing device |
| WO2020066701A1 (en) * | 2018-09-26 | 2020-04-02 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | Substrate processing apparatus, method for producing semiconductor device, and program |
| JP2020148473A (en) * | 2019-03-11 | 2020-09-17 | 東京エレクトロン株式会社 | Method for calibrating multiple chamber pressure sensors and substrate processing system |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2902027B1 (en) * | 2006-06-08 | 2008-12-05 | Sidel Participations | PLASMA CONTAINER PROCESSING MACHINE, COMPRISING AN INBOARD VACUUM CIRCUIT |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6091642A (en) * | 1983-10-25 | 1985-05-23 | Toshiba Corp | Vacuum device for semiconductor manufacture |
| JPS61220332A (en) * | 1985-03-27 | 1986-09-30 | Hitachi Ltd | Etching end point judging equipment |
| JPS62169416A (en) * | 1986-01-22 | 1987-07-25 | Hitachi Ltd | Pressure control method and device for vacuum equipment |
| JPS6368790A (en) * | 1986-09-10 | 1988-03-28 | Hitachi Ltd | Vacuum exhaust equipment |
-
1992
- 1992-03-19 JP JP4062914A patent/JP2826409B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6091642A (en) * | 1983-10-25 | 1985-05-23 | Toshiba Corp | Vacuum device for semiconductor manufacture |
| JPS61220332A (en) * | 1985-03-27 | 1986-09-30 | Hitachi Ltd | Etching end point judging equipment |
| JPS62169416A (en) * | 1986-01-22 | 1987-07-25 | Hitachi Ltd | Pressure control method and device for vacuum equipment |
| JPS6368790A (en) * | 1986-09-10 | 1988-03-28 | Hitachi Ltd | Vacuum exhaust equipment |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7553773B2 (en) * | 1999-12-14 | 2009-06-30 | Tokyo Electron Limited | Pressure control method and processing device |
| KR100467813B1 (en) * | 2002-05-02 | 2005-01-24 | 동부아남반도체 주식회사 | Apparatus of warming for unstriping of photoresist and method of manufacturing for semiconductor device using the same |
| JP2017167102A (en) * | 2016-03-18 | 2017-09-21 | 東京エレクトロン株式会社 | Pressure measuring device, exhaust system using the same, and substrate processing device |
| CN107202665A (en) * | 2016-03-18 | 2017-09-26 | 东京毅力科创株式会社 | Pressure measuring unit, gas extraction system and substrate board treatment |
| KR20170108858A (en) * | 2016-03-18 | 2017-09-27 | 도쿄엘렉트론가부시키가이샤 | Pressure measuring device and exhaust system using the same, and substrate processing apparatus |
| CN107202665B (en) * | 2016-03-18 | 2020-11-10 | 东京毅力科创株式会社 | Pressure measuring device, exhaust system, and substrate processing apparatus |
| WO2020066701A1 (en) * | 2018-09-26 | 2020-04-02 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | Substrate processing apparatus, method for producing semiconductor device, and program |
| JPWO2020066701A1 (en) * | 2018-09-26 | 2021-09-09 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | Substrate processing equipment, semiconductor equipment manufacturing methods and programs |
| JP2020148473A (en) * | 2019-03-11 | 2020-09-17 | 東京エレクトロン株式会社 | Method for calibrating multiple chamber pressure sensors and substrate processing system |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2826409B2 (en) | 1998-11-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20080067146A1 (en) | Plasma processing apparatus, method for detecting abnormality of plasma processing apparatus and plasma processing method | |
| US5394755A (en) | Flow quantity test system for mass flow controller | |
| US7253107B2 (en) | Pressure control system | |
| KR100745372B1 (en) | Gas flow amount monitoring device and method for semiconductor manufacturing equipment | |
| JP4335085B2 (en) | Vacuum pressure control system | |
| JP2011008804A (en) | System for regulating pressure in vacuum chamber, and vacuum pumping unit equipped with the same | |
| KR20050028943A (en) | System for controling pressure of low pressure-chemical vapor deposition equipment | |
| US20190139796A1 (en) | Monitoring apparatus and semiconductor manufacturing apparatus including the same | |
| US7155319B2 (en) | Closed loop control on liquid delivery system ECP slim cell | |
| US7194821B2 (en) | Vacuum processing apparatus and vacuum processing method | |
| JPH05267224A (en) | Dryetching system | |
| TW202146856A (en) | Gas inspection method, substrate processing method, and substrate processing system | |
| US7592569B2 (en) | Substrate processing apparatus, pressure control method for substrate processing apparatus and recording medium having program recorded therein | |
| US7658200B2 (en) | Semiconductor manufacturing apparatus and control method thereof | |
| US6117348A (en) | Real time monitoring of plasma etching process | |
| JPH11353032A (en) | Mechanism and method for detecting leakage of cooling gas | |
| JPH02276243A (en) | Plasma etching device | |
| JP2002303295A (en) | Evacuating ability monitoring method, vacuum treatment method and device | |
| JP2003257878A (en) | Semiconductor manufacturing apparatus and method for manufacturing semiconductor device using the same | |
| JP4511236B2 (en) | Semiconductor manufacturing apparatus and measurement deviation detection method | |
| KR200269069Y1 (en) | Cooling gas supply device of plasma etching system | |
| JP2000181548A (en) | Vacuum processor and method for controlling pressure therefor | |
| KR100968563B1 (en) | Automatic pressure control method of plasma etching device | |
| KR100212714B1 (en) | Exhaust pressure control system | |
| JPH05267221A (en) | Interlocking of etching pressure in reactive ion etching system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19980818 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313532 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080911 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080911 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090911 Year of fee payment: 11 |
|
| LAPS | Cancellation because of no payment of annual fees |