JPH05264379A - Semiconductor pressure detecting device - Google Patents
Semiconductor pressure detecting deviceInfo
- Publication number
- JPH05264379A JPH05264379A JP9330592A JP9330592A JPH05264379A JP H05264379 A JPH05264379 A JP H05264379A JP 9330592 A JP9330592 A JP 9330592A JP 9330592 A JP9330592 A JP 9330592A JP H05264379 A JPH05264379 A JP H05264379A
- Authority
- JP
- Japan
- Prior art keywords
- pressure sensor
- sensor chip
- detecting device
- diaphragm
- stopper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 claims description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 239000005297 pyrex Substances 0.000 claims description 2
- 230000006355 external stress Effects 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 230000035882 stress Effects 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】この発明は、半導体圧力検出装
置、特にその圧力センサチップの破損防止対策に関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor pressure detecting device, and more particularly to a measure for preventing damage to a pressure sensor chip thereof.
【0002】[0002]
【従来の技術】図3は従来の圧力センサの断面図であ
り、図において、1は圧力を電気信号に変換する圧力セ
ンサチップで、圧力を感知するためにエッチングで形成
されたダイヤフラム部2を有する。3はこの圧力センサ
チップ1を支持する台座で、基板(ヘッダー)4上に載
置され基板からの応力を緩和する。2. Description of the Related Art FIG. 3 is a sectional view of a conventional pressure sensor. In the figure, reference numeral 1 denotes a pressure sensor chip for converting pressure into an electric signal, and a diaphragm portion 2 formed by etching for sensing pressure. Have. A pedestal 3 supports the pressure sensor chip 1 and is placed on a substrate (header) 4 to relieve stress from the substrate.
【0003】以上のような構成において、圧力センサチ
ップの感度を上げるためには、ダイヤフラムの厚みを薄
くするか、あるいはダイヤフラムの面積を大きくするな
どの方法がある。ここで、パイプ部5から圧力Pが加わ
ったとき、ダイヤフラムの外周に最も応力が発生し、特
にダイヤフラム中心から外周に向けての応力が大きく、
その値は、O2=3Pr2/4h2の式で表わせる。こ
こで、Pは圧力、rは半径、hはダイヤフラム厚さであ
る。そしてこの応力が3×106dyn/m2以上発生する
と、シリコンは破損してしまうことになる。In order to increase the sensitivity of the pressure sensor chip in the above structure, there is a method of reducing the thickness of the diaphragm or increasing the area of the diaphragm. Here, when the pressure P is applied from the pipe portion 5, the most stress is generated on the outer periphery of the diaphragm, and particularly the stress from the center of the diaphragm to the outer periphery is large,
The value can be represented by the formula of O 2 = 3Pr 2 / 4h 2 . Here, P is the pressure, r is the radius, and h is the diaphragm thickness. If this stress is 3 × 10 6 dyn / m 2 or more, the silicon will be damaged.
【0004】[0004]
【発明が解決しようとする課題】従来の半導体圧力セン
サは以上のように構成されているので、高感度の圧力セ
ンサを作る場合、ダイヤフラムの厚みを薄くするか、あ
るいはダイヤフラムの径を大きくしなければならず、微
小な圧力でもシリコンチップが破損してしまうという問
題点があった。Since the conventional semiconductor pressure sensor is constructed as described above, when making a highly sensitive pressure sensor, the thickness of the diaphragm must be reduced or the diameter of the diaphragm must be increased. Therefore, there is a problem that the silicon chip is damaged even by a small pressure.
【0005】この発明は上記のような問題点を解消する
ためになされたもので、たとえシリコンチップが破損す
るような圧力が加わっても、破損には至らないようにす
ることを目的とする。The present invention has been made in order to solve the above problems, and an object thereof is to prevent damage even if a pressure for damaging a silicon chip is applied.
【0006】[0006]
【課題を解決するための手段】この発明に係る半導体圧
力検出装置は、圧力センサチップのダイヤフラム部に圧
力が加わった場合に、ある一定以上の圧力に対し、それ
以上ダイヤフラムが変形しないように、凹部を有するス
トッパーをチップ上面に設けたものである。SUMMARY OF THE INVENTION A semiconductor pressure detecting device according to the present invention, when pressure is applied to a diaphragm portion of a pressure sensor chip, so that the diaphragm is not further deformed with respect to a certain pressure or more, A stopper having a recess is provided on the upper surface of the chip.
【0007】[0007]
【作用】この発明におけるストッパーは、圧力センサチ
ップに対して破損に至る応力が加わらないように抑制す
る。The stopper according to the present invention suppresses the stress that causes damage to the pressure sensor chip.
【0008】[0008]
実施例1.以下この発明の一実施例を図について説明す
る。図1において、1〜5は図3と同一又は相当部分を
示しており、6は圧力センサチップ1のダイヤフラム部
2上に接合されたストッパーで、パイレックスガラスを
用いており、このストッパーの中央部には数μの深さの
凹部7と、通気用穴8が設けられている。なおこの接合
には、陽極接合を用いることにより、接着厚みの制御は
不要となる。Example 1. An embodiment of the present invention will be described below with reference to the drawings. In FIG. 1, 1 to 5 show the same or corresponding parts as in FIG. 3, and 6 is a stopper joined on the diaphragm portion 2 of the pressure sensor chip 1, which uses Pyrex glass, and the central portion of this stopper is shown. A concave portion 7 having a depth of several μ and a ventilation hole 8 are provided in the. By using anodic bonding for this bonding, it is not necessary to control the bonding thickness.
【0009】以上のような構成において、パイプ部5か
ら圧力が印加されてダイヤフラム2が凸状に変形して
も、ストッパー6により、ある一定以上の変形は抑制さ
れ、ダイヤフラムの破損を防ぐことができる。In the above structure, even if the diaphragm 2 is deformed into a convex shape due to the pressure applied from the pipe portion 5, the stopper 6 prevents the diaphragm 2 from being deformed to a certain degree or more and prevents the diaphragm from being damaged. it can.
【0010】図2はこの発明の他の実施例を示すもの
で、ストッパー6にシリコンを用いるとともに、その下
面に半田バンプ9を接合し、このバンプの高さを調整す
ることにより、圧力センサチップ1とストッパー6との
間隔を簡単に制御できるようにしたものである。例え
ば、バンプ径を大きくすると高くなり、小さくすると低
くなる。このように或一定の高さをもつ半田バンプを設
けたシリコンストッパーを圧力センサチップに取付け
る。FIG. 2 shows another embodiment of the present invention, in which silicon is used for the stopper 6, solder bumps 9 are bonded to the lower surface of the stopper 6, and the height of the bump is adjusted to adjust the pressure sensor chip. The distance between the stopper 1 and the stopper 6 can be easily controlled. For example, the larger the bump diameter, the higher the bump diameter, and the smaller the bump diameter, the lower the bump diameter. A silicon stopper provided with a solder bump having a certain height is attached to the pressure sensor chip.
【0011】以上のような構成において、圧力がパイプ
部から加わった場合、圧力センサチップのダイヤフラム
は凸状となるが、ある一定以上変形しないものとなる。In the above structure, when pressure is applied from the pipe portion, the diaphragm of the pressure sensor chip has a convex shape, but does not deform more than a certain amount.
【0012】[0012]
【発明の効果】以上のようにこの発明によれば、簡単な
構成により半導体圧力検出装置の信頼性を大幅に向上し
得る効果がある。As described above, according to the present invention, there is an effect that the reliability of the semiconductor pressure detecting device can be greatly improved with a simple structure.
【図1】この発明の一実施例を示す断面図である。FIG. 1 is a sectional view showing an embodiment of the present invention.
【図2】この発明の他の実施例を示す断面図である。FIG. 2 is a sectional view showing another embodiment of the present invention.
【図3】従来の半導体圧力検出装置を示す断面図であ
る。FIG. 3 is a cross-sectional view showing a conventional semiconductor pressure detecting device.
1 圧力センサチップ 2 ダイヤフラム 3 台座 4 ヘッダー 5 パイプ 6 ストッパー 7 凹部 9 バンプ 1 Pressure Sensor Chip 2 Diaphragm 3 Pedestal 4 Header 5 Pipe 6 Stopper 7 Recess 9 Bump
Claims (3)
サチップと、この圧力センサチップと接合して外部から
の応力を緩和する台座と、この台座を載置する基板を備
えた半導体圧力検出装置において、上記圧力センサチッ
プのダイヤフラム部の上面に、中央部に所定深さの凹部
を形成したダイヤフラム破損防止用ストッパーを設けた
ことを特徴とする半導体圧力検出装置。1. A semiconductor pressure detecting device comprising: a pressure sensor chip having a thin diaphragm portion; a pedestal that is joined to the pressure sensor chip to relieve stress from the outside; and a substrate on which the pedestal is mounted. A semiconductor pressure detecting device characterized in that a diaphragm damage preventing stopper having a recess having a predetermined depth formed in the central portion is provided on the upper surface of the diaphragm portion of the pressure sensor chip.
い、圧力センサチップに陽極接合したことを特徴とする
請求項1記載の半導体圧力検出装置。2. The semiconductor pressure detecting device according to claim 1, wherein Pyrex glass is used for the stopper, and the pressure sensor chip is anodically bonded.
サチップと、この圧力センサチップと接合して外部から
の応力を緩和する台座と、この台座を載置する基板を備
えた半導体圧力検出装置において、上記圧力センサチッ
プのダイヤフラム部の上面に、下面外周部に所定高さの
半田バンプを接合したシリコン製ストッパーを設けたこ
とを特徴とする半導体圧力検出装置。3. A semiconductor pressure detecting device comprising: a pressure sensor chip having a thin diaphragm portion; a pedestal that is joined to the pressure sensor chip to relieve external stress; and a substrate on which the pedestal is mounted. A semiconductor pressure detecting device characterized in that a silicon stopper having solder bumps of a predetermined height bonded to an outer peripheral portion of a lower surface is provided on an upper surface of a diaphragm portion of the pressure sensor chip.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9330592A JPH05264379A (en) | 1992-03-19 | 1992-03-19 | Semiconductor pressure detecting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9330592A JPH05264379A (en) | 1992-03-19 | 1992-03-19 | Semiconductor pressure detecting device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05264379A true JPH05264379A (en) | 1993-10-12 |
Family
ID=14078629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9330592A Pending JPH05264379A (en) | 1992-03-19 | 1992-03-19 | Semiconductor pressure detecting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH05264379A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012247391A (en) * | 2011-05-31 | 2012-12-13 | Denso Corp | Pressure sensor |
-
1992
- 1992-03-19 JP JP9330592A patent/JPH05264379A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012247391A (en) * | 2011-05-31 | 2012-12-13 | Denso Corp | Pressure sensor |
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