JPH05259274A - Semiconductor device and its manufacture - Google Patents

Abstract

PURPOSE:To prevent short-circuiting of elements due to sagging of a connection wire or a different matter by including a scribe street provided on an upper face of a periphery of a semiconductor pellet and an insulation film provided on an upper part of a pellet side. CONSTITUTION:A silicon oxide film 2 is formed on a silicon substrate 1, and after a window is opened on the silicon oxide film 2, impurities are diffused to form a diffusion layer. Then a metal film is deposited on a surface including the window and etched to form an electrode 4, and a scribe street 5 is formed in the periphery of an element region. Then after a groove 6 is formed in the scribe street 5, an insulation film 7 such as a silicon oxide film or a silicon nitride film is formed selectively in the scribe street 5 including the groove 6. Thus short-circuiting of elements caused by contact with the electrode on the pellet surface due to sagging of a connection wire or a different matter can be prevented.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a semiconductor pellet.

[0002]

2. Description of the Related Art As shown in FIG. 3, a conventional semiconductor device has a silicon oxide film 3 formed on a surface of a silicon substrate 1.
And a diffusion layer 2 formed by introducing an impurity of the opposite conductivity type of the silicon substrate 1 through a window provided in the silicon oxide film 3 and an electrode 4 connected to the diffusion layer 2 to form a planar semiconductor element. Then, it is cut using a diamond dicing saw to form semiconductor pellets, and the silicon substrate 1 is exposed on the scribe streets and the side surfaces of the cut pellets.

[0003]

In this conventional semiconductor device, since the surface of the silicon substrate is exposed on the scribe streets and the side surfaces, the pellets are mounted on the package container or the lead frame by using the eutectic of gold silicon. In the process, the gold-silicon eutectic film crawls on the side surface of the pellet and on the scribe street.

In a vertical device such as a diode or a transistor, the scribe street and the side surface of the pellet have the same potential as the electrode on the back surface of the pellet. There has been a problem that the element is short-circuited when it comes into contact with the electrode.

[0005]

The semiconductor device of the present invention comprises:
It has a scribe street provided on the upper surface of the peripheral edge of the semiconductor pellet and an insulating film provided on the side surface of the pellet following the scribe street.

A method of manufacturing a semiconductor device according to the present invention comprises a step of forming a scribe street on a semiconductor substrate around the element region, a step of forming a groove in the scribe street, the scribe street and the groove. A step of forming an insulating film on the surface of, and a step of cutting the lower part of the groove to divide it into individual semiconductor pellets.

[0007]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings.

1 (a) to 1 (c) are cross-sectional views of a semiconductor pellet showing the order of steps for explaining the manufacturing method of the first embodiment of the present invention. The case of a diode will be described for simplification of description.

First, as shown in FIG. 1A, a silicon oxide film 2 is formed on a silicon substrate 1, a window is opened in the silicon oxide film 2 by using a photolithography technique and an etching technique, and then the silicon oxide film 2 is formed. The film 2 is used as a mass to diffuse the irregular substance of the opposite conductivity type to the silicon substrate 1 to form the diffusion layer 2. Next, a metal film is deposited on the surface including the window using a vapor deposition technique and etched to form an electrode 4, and a scribe street 5 is formed around the element region.

Next, as shown in FIG. 1 (b), a dicer is used on the scribe street 5, and the silicon substrate 1
After forming the groove 6 having a depth of about 1/3 to 2/3 of the thickness of the silicon oxide film, an insulating film 7 such as a silicon oxide film or a silicon nitride film is selectively formed on the scribe street including the groove 6 by a CVD method or the like. Form.

Next, as shown in FIG. 1C, the silicon substrate 1 is divided into individual pellets.

FIG. 2 is a sectional view of a semiconductor pellet for explaining the second embodiment of the present invention.

As shown in FIG. 2, the structure is the same as that of the first embodiment except that the groove 8 is formed in the scribe street 5 by using the etching method, and the groove 8 is inclined. Therefore, the insulating film 7 is formed on the side surface of the groove 8 as compared with the first embodiment.
Has the advantage that it is easy to apply.

[0014]

As described above, according to the present invention, when a scribe street of a semiconductor and a pellet and an insulating film is formed on a part of the side surface subsequent to the scribe street, the pellet is mounted by using a gold-silicon eutectic crystal. The gold-silicon eutectic film is prevented from climbing up, and even if the surface electrode of the pellet comes into contact with the scribe street or the upper portion of the side surface of the pellet due to a drop of the connecting wire or a foreign matter, it is possible to prevent a short circuit of the element.

[Brief description of drawings]

1A to 1C are cross-sectional views of a semiconductor pellet showing steps in a manufacturing process for explaining a manufacturing method according to a first embodiment of the present invention.

FIG. 2 is a sectional view of a semiconductor pellet for explaining a second embodiment of the present invention.

FIG. 3 is a sectional view of a semiconductor pellet showing an example of a conventional semiconductor device.

[Explanation of symbols]

 1 Silicon substrate 2 Diffusion layer 3 Silicon oxide film 4 Electrode 5 Scribe street 6, 8 Groove 7 Insulating film

Claims (2)

[Claims] 1. A semiconductor device comprising a scribe street provided on an upper surface of a peripheral portion of a semiconductor pellet and an insulating film provided on an upper portion of a side surface of the pellet following the scribe street. 2. A device region and a scribe street formed around the device region on a semiconductor substrate, a groove formed in the scribe street, and an insulating film formed on the surface of the scribe street and the groove. A method of manufacturing a semiconductor device, comprising: a step of cutting the lower portion of the groove to divide into individual semiconductor pellets.