JPH0523553U - Optical semiconductor device - Google Patents
Optical semiconductor deviceInfo
- Publication number
- JPH0523553U JPH0523553U JP7976291U JP7976291U JPH0523553U JP H0523553 U JPH0523553 U JP H0523553U JP 7976291 U JP7976291 U JP 7976291U JP 7976291 U JP7976291 U JP 7976291U JP H0523553 U JPH0523553 U JP H0523553U
- Authority
- JP
- Japan
- Prior art keywords
- optical semiconductor
- semiconductor device
- semiconductor element
- concave
- wall surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 230000003287 optical effect Effects 0.000 title claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000011347 resin Substances 0.000 claims abstract description 10
- 229920005989 resin Polymers 0.000 claims abstract description 10
- 238000000576 coating method Methods 0.000 abstract description 10
- 239000011248 coating agent Substances 0.000 abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
Abstract
(57)【要約】
【目的】 光半導体装置の変換効率の向上を計ることを
目的とする。
【構成】 光半導体素子を搭載する金属被膜で覆われた
凹状樹脂部を凹面鏡形状とし、光半導体素子を凹面鏡形
状の焦点位置に配置する。
(57) [Abstract] [Purpose] The objective is to improve the conversion efficiency of optical semiconductor devices. A concave resin portion covered with a metal coating on which an optical semiconductor element is mounted has a concave mirror shape, and the optical semiconductor element is arranged at a focal position of the concave mirror shape.
Description
【０００１】[0001]
本考案は、光信号と電気信号の変換を行なう光半導体装置に関する。 The present invention relates to an optical semiconductor device that converts an optical signal into an electrical signal.
【０００２】[0002]
図２に従来の光半導体装置の一例を示す。図において１は凹状樹脂部、２は光 半導体素子、３はリード、４はコレクタ電極、５はエミッタ電極である。従来の 半導体装置の凹状樹脂部１の内部壁面形状は、傾斜を持つ形状となっており、内 部壁面は金属被膜で覆われて鏡面となっている。 この金属被膜は電気的に少なくとも２つに分離して電極を形成させている。図 ２には金属被膜が４ケに分離した例を示す。４ケの金属被膜のうち１ケの金属被 膜が光半導体素子２のコレクタと接続し対向する別の金属被膜は、光半導体素子 ２のエミッタと接続する。光半導体素子のコレクタエミッタと接続した金属被膜 は凹状樹脂部１の外部側壁部を覆う金属被膜と接続しており、それぞれコレクタ 電極４、エミッタ電極５を形成している。 FIG. 2 shows an example of a conventional optical semiconductor device. In the figure, 1 is a concave resin portion, 2 is an optical semiconductor element, 3 is a lead, 4 is a collector electrode, and 5 is an emitter electrode. The inner wall surface shape of the concave resin portion 1 of the conventional semiconductor device has an inclined shape, and the inner wall surface is covered with a metal film to be a mirror surface. This metal film is electrically separated into at least two parts to form electrodes. FIG. 2 shows an example in which the metal coating is separated into four pieces. One of the four metal coatings is connected to the collector of the optical semiconductor element 2 and the other metal coating is connected to the emitter of the optical semiconductor element 2. The metal film connected to the collector-emitter of the optical semiconductor element is connected to the metal film covering the outer side wall of the recessed resin portion 1, forming the collector electrode 4 and the emitter electrode 5, respectively.
【０００３】[0003]
従来の光半導体装置は、上記のような構成となっていたので入力した光が金属 被膜によって凹状樹脂部に吸収されることはおさえられるが、内部壁面の金属被 膜によって反射した光は散乱してしまう。そのため、光半導体素子２を受光素子 とした場合、入力した光が有効に受光素子に吸収されず、変換効率が悪いという 問題があった。本考案は、上記問題を解決するために変換効率の良い光半導体装 置を提供するものである。 Since the conventional optical semiconductor device has the above-mentioned configuration, the input light is prevented from being absorbed by the concave resin portion by the metal coating, but the light reflected by the metal coating on the inner wall surface is scattered. Will end up. Therefore, when the optical semiconductor element 2 is used as a light receiving element, there is a problem that the input light is not effectively absorbed by the light receiving element and the conversion efficiency is poor. The present invention provides an optical semiconductor device with good conversion efficiency to solve the above problems.
【０００４】[0004]
本発明は、凹状樹脂部の内部壁面を凹面鏡形状とし、内部壁面を金属被膜で覆 い、光半導体素子を凹面鏡形状の焦点位置に配置したものである。 According to the present invention, the inner wall surface of the concave resin portion is formed into a concave mirror shape, the inner wall surface is covered with a metal coating, and the optical semiconductor element is arranged at the focal position of the concave mirror shape.
【０００５】[0005]
図１は本考案の一実施例を示す。図における符号は図２の同一符号と同一又は 相当するものを示す。 以下図１に示す実施例について説明する。凹状樹脂部１の内部壁面は凹面鏡形 状となっており、内部壁面は金属被膜で覆われている。この金属被膜は、Ａｕ， Ａｇ等の単層の他Ｔｉ／Ａｌ，Ｎｉ／Ｃｒ／Ａｕ等の多属金属膜などいずれでも 良く、凹状樹脂部表面全面に、めっき、スパッタ、蒸着等によって付着させた後 、エッチング等によって必要のない部分の除去を行なう。金属被膜は少なくとも ２つに分離して電極を形成させる。図１は２つに分離した例であり、分離された 金属被膜の一方がコレクタ電極４、他方がエミッタ電極５となる。内部壁面の凹 面鏡の焦点を結ぶ位置に光半導体素子２を搭載し、光半導体素子２の裏面の電極 をコレクタ電極４に接続し、光半導体素子２の上面の電極をリード３を介してエ ミッタ電極５に接続する。その後凹面鏡部は透光性の樹脂でモールドされ、光半 導体装置が得られる。 光半導体素子２として受光素子を用いて試作した光半導体装置は従来に較べて 約２倍の変換効率の向上が計られた。 なお、光半導体素子として受光素子を用いた例を示したが光半導体素子として 発光素子を用いる場合にも応用できる。 FIG. 1 shows an embodiment of the present invention. The reference numerals in the drawings indicate the same or corresponding to the same reference numerals in FIG. The embodiment shown in FIG. 1 will be described below. The inner wall surface of the concave resin portion 1 has a concave mirror shape, and the inner wall surface is covered with a metal coating. The metal coating may be a single layer of Au, Ag or the like, or a multi-genus metal film such as Ti / Al, Ni / Cr / Au or the like. After that, unnecessary portions are removed by etching or the like. The metal coating separates into at least two to form the electrode. FIG. 1 shows an example in which the metal film is separated into two, one of which is the collector electrode 4 and the other is the emitter electrode 5. The optical semiconductor element 2 is mounted at a position on the inner wall surface where the focal point of the concave mirror is connected, the electrode on the back surface of the optical semiconductor element 2 is connected to the collector electrode 4, and the electrode on the upper surface of the optical semiconductor element 2 is connected via the lead 3. Connect to the emitter electrode 5. After that, the concave mirror portion is molded with a light-transmissive resin to obtain an optical semiconductor device. The optical semiconductor device prototyped using the light receiving element as the optical semiconductor element 2 has been improved in conversion efficiency about twice as much as the conventional one. Although an example in which a light receiving element is used as an optical semiconductor element has been shown, the present invention can be applied to a case where a light emitting element is used as an optical semiconductor element.
【０００６】[0006]
以上説明したように本考案よれば、光が散乱しなくなり変換効率の向上が大幅 に改善されるという効果がある。 As described above, according to the present invention, there is an effect that light is not scattered and the improvement of conversion efficiency is greatly improved.
【図１】本考案の一実施例を示す説明図である。FIG. 1 is an explanatory view showing an embodiment of the present invention.
【図２】従来の光半導体装置の一例を示す説明図であ
る。FIG. 2 is an explanatory diagram showing an example of a conventional optical semiconductor device.
１ 凹状樹脂部 ２ 光半導体素子 ３ リード ４ コレクタ電極 ５ エミッタ電極 1 recessed resin part 2 optical semiconductor element 3 lead 4 collector electrode 5 emitter electrode
Claims (1)
鏡面とした光半導体装置において上記内部壁面を凹面鏡
形状とし、光半導体素子を上記凹面鏡形状の焦点位置に
配置することを特徴とする光半導体装置。1. An optical semiconductor device in which an inner wall surface of a concave resin portion is covered with a metal film to form a mirror surface, wherein the inner wall surface has a concave mirror shape, and an optical semiconductor element is arranged at a focal position of the concave mirror shape. Semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7976291U JPH0523553U (en) | 1991-09-06 | 1991-09-06 | Optical semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7976291U JPH0523553U (en) | 1991-09-06 | 1991-09-06 | Optical semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0523553U true JPH0523553U (en) | 1993-03-26 |
Family
ID=13699234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7976291U Pending JPH0523553U (en) | 1991-09-06 | 1991-09-06 | Optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0523553U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008098555A (en) * | 2006-10-16 | 2008-04-24 | Genki Koden Handotai Kofun Yugenkoshi | Structure of backlight panel having implantable LED and method for manufacturing the same |
| JP2009541949A (en) * | 2006-07-05 | 2009-11-26 | ティーアイアール テクノロジー エルピー | Lighting device package |
-
1991
- 1991-09-06 JP JP7976291U patent/JPH0523553U/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009541949A (en) * | 2006-07-05 | 2009-11-26 | ティーアイアール テクノロジー エルピー | Lighting device package |
| JP2008098555A (en) * | 2006-10-16 | 2008-04-24 | Genki Koden Handotai Kofun Yugenkoshi | Structure of backlight panel having implantable LED and method for manufacturing the same |
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