JPS5815281A - Optical coupling element and manufacture thereof - Google Patents
Optical coupling element and manufacture thereofInfo
- Publication number
- JPS5815281A JPS5815281A JP56114910A JP11491081A JPS5815281A JP S5815281 A JPS5815281 A JP S5815281A JP 56114910 A JP56114910 A JP 56114910A JP 11491081 A JP11491081 A JP 11491081A JP S5815281 A JPS5815281 A JP S5815281A
- Authority
- JP
- Japan
- Prior art keywords
- light
- wafer
- resin
- optical coupling
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、光結合素子およびその製造方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an optical coupling device and a method for manufacturing the same.
従来の光結合素子の例としてフォトカプラを取り上げる
。第１図は従来から用いられているフォトカプラの一般
的なものである。相対向する発光素子１と受光素子２と
ポンディングワイヤ３を透明樹脂４でモールドし、外側
を不透明な樹脂５で囲んだ構造であり、６はリード線で
ある。A photocoupler will be taken up as an example of a conventional optical coupling device. FIG. 1 shows a typical photocoupler that has been used in the past. It has a structure in which a light emitting element 1, a light receiving element 2, and a bonding wire 3 facing each other are molded with a transparent resin 4, and the outside is surrounded by an opaque resin 5, and 6 is a lead wire.
第１図の例に見られるフォトカプラにおいては入力され
た光に対し出力された光の減衰を抑えるため、発光素子
１と受光素子２間の距離をできるだけ短くすることが望
まれる。そのため、画素子間の間隔を狭めることになる
が、そうすると各素子のボンディングワイヤが接触した
り、画素子間の絶縁耐力が小さくなる欠点が生じてくる
。In the photocoupler shown in the example of FIG. 1, it is desirable to make the distance between the light emitting element 1 and the light receiving element 2 as short as possible in order to suppress the attenuation of the output light relative to the input light. Therefore, the distance between the pixel elements is narrowed, but this results in disadvantages such as the bonding wires of each element coming into contact with each other and the dielectric strength between the pixel elements being reduced.
本発明に係るフォトカプラでは、発光素子と受光素子と
にガラス又は樹脂等の透光性でかつ高耐圧の膜をはさみ
画素子を接着させることにより、画素子間の間隔を縮め
入力光の損失を少くするとともに、絶縁耐力を大きくし
性能を高めたものである。本発明は、上記の如く高性能
の光結合素子およびその製造方法を目的とする。In the photocoupler according to the present invention, a light-transmitting and high-voltage film made of glass or resin is sandwiched between the light-emitting element and the light-receiving element, and the pixel elements are bonded together, thereby reducing the distance between the pixel elements and reducing the loss of input light. It has improved performance by reducing the dielectric strength and increasing the dielectric strength. As described above, the present invention aims at a high-performance optical coupling device and a method for manufacturing the same.
前記目的を達成するために、本発明の光結合素子は、受
光素子のウェハーの生産プロセスにおいて、本発明の特
徴であるガラス又は樹脂絶縁層を一体形成し工程の簡略
化を計った。In order to achieve the above object, the optical coupling device of the present invention has a glass or resin insulating layer, which is a feature of the present invention, integrally formed in the production process of a wafer of a light receiving device, thereby simplifying the process.
以下本発明に係るフォトカプラの製造方法を説明する。A method for manufacturing a photocoupler according to the present invention will be explained below.
第２図において、（ａ）は半導体基板より出発し、エピ
タキシャル成長ウェハー、酸化、べ・−ス・パターニン
グ、ベース拡散、エミッタ・パターニング、エミッタ拡
散、コンタクトパターニング〈アルミニウム蒸着、エツ
チング等の公知公用の半導体製造処理を終えたウェハー
の断面図である。７はシリコン酸化膜、８はアルミニウ
ム電極である。In Fig. 2, (a) starts from a semiconductor substrate, epitaxial growth wafer, oxidation, base patterning, base diffusion, emitter patterning, emitter diffusion, contact patterning (aluminum deposition, etching, etc.). FIG. 2 is a cross-sectional view of a wafer that has undergone manufacturing processing. 7 is a silicon oxide film, and 8 is an aluminum electrode.
（ｂ）以後が本発明による方法で以下の工程で処理さノ
′ｌ−る。(b) The following steps are carried out by the method according to the present invention.
（ｂ）絶縁層の形成二上記工程を経たウェハーの表面に
透光性の高耐圧絶縁層９が被着されるが、この絶縁層９
は、ＰＩＱ等の樹脂を塗布するか又は電気泳動法により
ガラス絶縁層を形成して作製される。(b) Formation of Insulating Layer 2 A light-transmitting high-voltage insulating layer 9 is deposited on the surface of the wafer that has gone through the above steps.
is manufactured by applying a resin such as PIQ or by forming a glass insulating layer by electrophoresis.
（Ｃ）電極８ａの形成：真空中でアルミニウムを蒸発さ
せて、上記絶縁層９が被着されたウェハー表面全面にア
ルミニウム膜を被着させる。このパターンを形成し、フ
ォトレジストをマスク（・でしてアルシミニウム嘆の不
要部分を化学腐蝕で除去する。）号トレジストは洗い落
トす。(C) Formation of electrode 8a: Aluminum is evaporated in vacuum to deposit an aluminum film over the entire surface of the wafer on which the insulating layer 9 has been deposited. After this pattern is formed, the photoresist is masked and unnecessary parts of the aluminum layer are removed by chemical etching.The photoresist is washed off.
（ｄ）絶縁層のコ’−ソチング：樹脂又はガラス絶縁層
９を」二記アルミニウム膜のバターニングト同ｔｐに選
択的にエンチングする。(d) Co-etching of the insulating layer: The resin or glass insulating layer 9 is selectively etched to the patterning point of the aluminum film described above.
（ｅ）ダイシンク二表面被覆および配線導体が歿こされ
たウェハーをベレフトに分割する。(e) Divide the wafer from which the die sink surface coating and wiring conductor have been removed into vertical parts.
（ｆ）アセンブリｍ：リード線１ｏトに上記り程ケ経て
作製された受光素子のベレフトをグイボンドし、更にそ
の十に発光素子１１をダンボンドする。そして、ワイヤ
ボンド１２より配線ケ行う。このままでもフォトカプラ
ーとしての中ＩＪ（１は可能であるか、第１図の従来装
置と同様に透明樹脂により全体をモールドし、更に外部
光の影響を除くための遮光性樹脂をモールドすることも
できる。(f) Assembly m: The top end of the light-receiving device produced in the above steps is firmly bonded to the lead wire 1o, and the light-emitting device 11 is further bonded to the top end of the light-receiving device produced through the above steps. Then, wiring is performed using the wire bond 12. Is it possible to use a medium IJ (1) as a photocoupler as it is? It is also possible to mold the entire body with transparent resin as in the conventional device shown in Fig. 1, and to further mold it with light-shielding resin to remove the influence of external light. can.
本発明のフォトカプラ（第２図の（ｆ））のように樹脂
又はガラス絶縁層を被着し、該受光素子と発光素子を接
着させた光結合素子は、発光素子と受光素子の間隔を縮
めることで入力された光に対し出力された光の減衰を抑
えることができ、又、絶縁耐圧を大きくすることができ
るという効果がある。A photocoupler like the photocoupler of the present invention (FIG. 2(f)), in which a resin or glass insulating layer is applied and a light-receiving element and a light-emitting element are bonded, has a distance between the light-emitting element and the light-receiving element. By contracting, the attenuation of the output light relative to the input light can be suppressed, and the dielectric strength can be increased.
第１図は従来例のフ第１・カプラの断面図、第２図（ａ
）乃至（ｆ）は本発明の光結合素子の製造方法み
の各程過の処理を示す素子断面図。
７・・・シリコン酸化膜、 ８．８ａ・・・アルミニ
ウム電極、 ９・・・樹脂又はガラス絶縁層、 １
０・・・リード線、 １１・・−発光素子、 １２
・・・ワイヤボンド。
代理人 弁理士 福 士 愛 彦Figure 1 is a cross-sectional view of the conventional F-1 coupler, and Figure 2 (a
) to (f) are device cross-sectional views showing each process of the method for manufacturing an optical coupling device of the present invention. 7... Silicon oxide film, 8.8a... Aluminum electrode, 9... Resin or glass insulating layer, 1
0...Lead wire, 11...-Light emitting element, 12
...wire bond. Agent Patent Attorney Aihiko Fukushi
Claims (1)
子において、表面に透光性樹脂又はガラス絶縁層を塗布
した受光素子上に発光素子を接着させたことを特徴とす
る光結合素子。 ２ ウェハー表面に透光性樹脂又はガラス絶縁層を被着
し、所望パターンの導電膜を形成後、該ウェハーをベレ
ットに切断して受光素子を作り、該受光素子の透光性樹
脂又はガラス絶縁層面と発光素子を対向させてグイポン
ドし製作することを特徴とする光結合素子の製造方法。[Claims] 1. An optical coupling device consisting of a light emitting element and a light receiving element facing each other, characterized in that the light emitting element is adhered onto the light receiving element whose surface is coated with a translucent resin or glass insulating layer. Optical coupling device. 2 A light-transmitting resin or glass insulating layer is applied to the wafer surface, a conductive film with a desired pattern is formed, and then the wafer is cut into pellets to make a light-receiving element, and the light-transmitting resin or glass insulation layer of the light-receiving element is A method of manufacturing an optical coupling device, characterized in that it is produced by pressing a layer surface and a light emitting device so that they face each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56114910A JPS5815281A (en) | 1981-07-21 | 1981-07-21 | Optical coupling element and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56114910A JPS5815281A (en) | 1981-07-21 | 1981-07-21 | Optical coupling element and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5815281A true JPS5815281A (en) | 1983-01-28 |
Family
ID=14649685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56114910A Pending JPS5815281A (en) | 1981-07-21 | 1981-07-21 | Optical coupling element and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5815281A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1432697A (en) * | 1973-05-04 | 1976-04-22 | Standard Telephones Cables Ltd | Optically coupled semiconductive switching devices |
| JPS5184584A (en) * | 1975-01-22 | 1976-07-23 | Hitachi Ltd | HANDOTAI FUOTO KAPURA |
-
1981
- 1981-07-21 JP JP56114910A patent/JPS5815281A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1432697A (en) * | 1973-05-04 | 1976-04-22 | Standard Telephones Cables Ltd | Optically coupled semiconductive switching devices |
| JPS5184584A (en) * | 1975-01-22 | 1976-07-23 | Hitachi Ltd | HANDOTAI FUOTO KAPURA |
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