JPH05234899A - Atomic layer epitaxy system - Google Patents
Atomic layer epitaxy systemInfo
- Publication number
- JPH05234899A JPH05234899A JP23610591A JP23610591A JPH05234899A JP H05234899 A JPH05234899 A JP H05234899A JP 23610591 A JP23610591 A JP 23610591A JP 23610591 A JP23610591 A JP 23610591A JP H05234899 A JPH05234899 A JP H05234899A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- atomic layer
- layer epitaxy
- substrate
- gas cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003877 atomic layer epitaxy Methods 0.000 title claims abstract description 55
- 239000007789 gas Substances 0.000 claims abstract description 154
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 238000009792 diffusion process Methods 0.000 claims abstract description 16
- 239000002994 raw material Substances 0.000 claims description 37
- 239000002019 doping agent Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000000407 epitaxy Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 11
- 239000013078 crystal Substances 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 6
- 238000005253 cladding Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 229910052717 sulfur Inorganic materials 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 229910052711 selenium Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 229910021476 group 6 element Inorganic materials 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
(57)【要約】
【目的】真空チャンバの容積を小さくし、原子層エピタ
キシーを極めて効率良く行ない、かつ信頼性を向上す
る。
【構成】ガスセル２０、２４、２６、２５を真空チャン
バ１６内に配置し、ガスセル２０、２４、２６、２５の
吐出口の形状を長辺が少なくとも基板１５の直径よりも
長い長方形とし、ガスセル２０、２４、２６、２５のガ
ス導入管７から吐出口までの間にガス拡散板８を設け、
複数の基板１５をガスセル２０、２４、２６、２５の拡
散方向に対し直角方向に回転移動し、基板１５上に複数
種の原料ガスをガスセル２０、２４、２６、２５から交
互に照射して、原子層エピタキシーを繰り返す。
(57) [Abstract] [Purpose] To reduce the volume of the vacuum chamber, perform atomic layer epitaxy extremely efficiently, and improve reliability. The gas cells 20, 24, 26, 25 are arranged in a vacuum chamber 16, and the shape of the discharge ports of the gas cells 20, 24, 26, 25 is a rectangle whose long sides are at least longer than the diameter of the substrate 15. , 24, 26, 25 are provided with a gas diffusion plate 8 between the gas introduction pipe 7 and the discharge port,
A plurality of substrates 15 are rotationally moved in a direction perpendicular to the diffusion direction of the gas cells 20, 24, 26, 25, and a plurality of kinds of source gases are alternately irradiated onto the substrate 15 from the gas cells 20, 24, 26, 25, Repeat atomic layer epitaxy.
Description
【０００１】[0001]
【産業上の利用分野】この発明は化合物半導体等の原子
層エピタキシーによる超格子構造の形成、周期的な異種
材料の積層、原子層ドーピングによる高濃度のドーピン
グまたは薄膜を成長させるための原子層エピタキシー装
置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to atomic layer epitaxy for forming a superlattice structure by atomic layer epitaxy of a compound semiconductor, periodical stacking of different materials, high concentration doping by atomic layer doping or growing a thin film. It relates to the device.
【０００２】[0002]
【従来の技術】従来、セルフリミティング機構を利用し
た原子層エピタキシーによる超格子構造の形成、周期的
な異種材料の積層に用いられる原子層エピタキシー装置
（たとえば、特開昭６２−２２２６２８号公報、特開昭
６３−１３６６１６号公報）は、図７に示すような基本
構成となっている。すなわち、真空チャンバ４６内は真
空排気装置４９と液体窒素温度に冷却されたシュラウド
４４とによって、超高真空に維持されている。真空チャ
ンバ４６にはヒータ４３を備えたガスセル４１ａ〜４１
ｃが設置されており、ヒータ４３はガスセル４１ａ〜４
１ｃ内の原料ガスの熱分解を行ない、ガスセル４１ａ〜
４１ｃから供給される原料ガスの流量はマスフローコン
トローラおよびバルブ４２によって制御される。ガスセ
ル４１ａ〜４１ｃに対向して基板４７が配置されてい
る。また、ガスセル４１ａ〜４１ｃの吐出口近傍に分子
線を遮断するためのシャッタ４５が備えられている。一
方、基板４７は基板ヒータ４８によって適当な結晶成長
温度に加熱され、面内の温度および膜厚の均一性を得る
ため、基板ヒータ４８は自転運動を行なう。2. Description of the Related Art Conventionally, an atomic layer epitaxy apparatus used for forming a superlattice structure by atomic layer epitaxy using a self-limiting mechanism and periodically laminating different kinds of materials (for example, JP-A-62-222628, Japanese Patent Laid-Open No. 63-136616) has a basic configuration as shown in FIG. That is, the inside of the vacuum chamber 46 is maintained at an ultrahigh vacuum by the vacuum exhaust device 49 and the shroud 44 cooled to the liquid nitrogen temperature. In the vacuum chamber 46, gas cells 41a to 41 having a heater 43 are provided.
c is installed, and the heater 43 is a gas cell 41a-4.
The raw material gas in 1c is thermally decomposed, and the gas cells 41a to
The flow rate of the raw material gas supplied from 41c is controlled by the mass flow controller and the valve 42. A substrate 47 is arranged so as to face the gas cells 41a to 41c. Further, a shutter 45 for blocking the molecular beam is provided near the discharge ports of the gas cells 41a to 41c. On the other hand, the substrate 47 is heated to an appropriate crystal growth temperature by the substrate heater 48, and the substrate heater 48 rotates about its axis in order to obtain in-plane temperature and film thickness uniformity.
【０００３】この原子層エピタキシー装置においては、
各ガスセル４１ａ〜４１ｃのバルブ４２の開閉、シャッ
タ４５の開閉を制御することによって原子層エピタキシ
ーが行なわれる。すなわち、ガスセル４１ａのバルブ４
２、シャッタ４５を開にし、第１種の原料ガスを基板４
７に照射して１原子層を成長させた後、ガスセル４１ａ
のバルブ４２、シャッタ４５を閉じる。つぎに、真空チ
ャンバ４６内に残留する原料ガスを排気したのち、ガス
セル４１ｂのバルブ４２、シャッタ４５を開き、第２種
の原料ガスを基板４７に照射する。このように、第１
種、第２種の原料ガスを交互に照射しながら原子層エピ
タキシーを行ない、超格子構造を形成していく。また、
ドーピングを行なう場合は、ドーパントガスを第１種の
原料ガスと第２種の原料ガスとを照射する間に、ガスセ
ル４１ｃによって照射するか、第１種、第２種の原料ガ
スのいずれかと同時に照射する。In this atomic layer epitaxy apparatus,
Atomic layer epitaxy is performed by controlling the opening / closing of the valve 42 and the opening / closing of the shutter 45 of each of the gas cells 41a to 41c. That is, the valve 4 of the gas cell 41a
2. The shutter 45 is opened, and the first type raw material gas is supplied to the substrate 4
After irradiating 7 to grow one atomic layer, the gas cell 41a
The valve 42 and the shutter 45 are closed. Next, after exhausting the raw material gas remaining in the vacuum chamber 46, the valve 42 and the shutter 45 of the gas cell 41b are opened, and the substrate 47 is irradiated with the second type raw material gas. Thus, the first
Atomic layer epitaxy is performed while alternately irradiating the source gases of the first and second types to form a superlattice structure. Also,
When doping is performed, the dopant gas is irradiated by the gas cell 41c during the irradiation of the first type raw material gas and the second type raw material gas, or at the same time as either the first type or the second type raw material gas is irradiated. Irradiate.
【０００４】[0004]
【発明が解決しようとする課題】この原子層エピタキシ
ー装置においては、基板４７の全面にわたって分子線を
できだけ均一な強度分布で照射するためには、基板４７
とガスセル４１ａ〜４１ｃの吐出口との距離を長く取る
必要があるから、真空チャンバ４６の容積も大きくな
る。また、基板４７とガスセル４１ａ〜４１ｃの吐出口
との距離が長くなると、基板４７に直接照射される分子
線の比率は小さくなり、ガスセル４１ａ〜４１ｃから射
出されたほとんどの原料ガスは実際に基板４７上での成
長には寄与せず、余剰ガスとして排気しなければならな
い。したがって、真空排気装置４９には排気流量の大き
いものが必要になるばかりでなく、原料ガスを切り換え
る際に余剰ガスを排気するための排気時間が長くなる。
また、１回の成長で１枚の基板４７しか処理できない。
このため、原子層エピタキシーの効率が低い。さらに、
原料ガスを切り換える度にバルブ４２の開閉動作とシャ
ッタ４５の開閉動作とが必要なため、積層回数を多くし
たり、また開閉動作の速度を早くすると、故障の原因と
なり、またバルブ４２、シャッタ４５の開閉動作の際
に、ガス流量のオーバーシュート、アンダーシュートが
生ずるから、安定なガス流量制御が困難になるので、信
頼性が低い。In this atomic layer epitaxy apparatus, in order to irradiate the molecular beam over the entire surface of the substrate 47 with the intensity distribution as uniform as possible, the substrate 47 is used.
Since it is necessary to take a long distance from the discharge ports of the gas cells 41a to 41c, the volume of the vacuum chamber 46 also becomes large. Further, when the distance between the substrate 47 and the discharge ports of the gas cells 41a to 41c becomes long, the ratio of the molecular beam directly irradiated to the substrate 47 becomes small, and most of the raw material gas injected from the gas cells 41a to 41c is actually the substrate. It does not contribute to the growth above 47 and must be exhausted as surplus gas. Therefore, not only the evacuation device 49 having a large evacuation flow rate is required, but also the evacuation time for exhausting the surplus gas when switching the source gas becomes long.
Further, only one substrate 47 can be processed by one growth.
Therefore, the efficiency of atomic layer epitaxy is low. further,
Since it is necessary to open / close the valve 42 and open / close the shutter 45 every time the source gas is switched, increasing the number of laminations or increasing the speed of the opening / closing causes a failure, and also causes the valve 42 and the shutter 45 to rotate. Since the gas flow rate overshoots and undershoots occur during the opening / closing operation of (1), stable gas flow rate control becomes difficult, resulting in low reliability.
【０００５】この発明は上述の課題を解決するためにな
されたもので、真空チャンバの容積を小さくすることが
でき、原子層エピタキシーを極めて効率良く行なうこと
ができ、かつ信頼性の高い原子層エピタキシー装置を提
供することを目的とする。The present invention has been made to solve the above-mentioned problems, and it is possible to reduce the volume of a vacuum chamber, to perform atomic layer epitaxy extremely efficiently, and to achieve highly reliable atomic layer epitaxy. The purpose is to provide a device.
【０００６】[0006]
【課題を解決するための手段】この目的を達成するた
め、この発明においては、基板上に複数種の原料ガスを
ガスセルから交互に照射して、原子層エピタキシーを繰
り返す原子層エピタキシー装置において、上記ガスセル
を真空チャンバ内に複数配置し、上記ガスセルの吐出口
の形状をほぼ長方形とし、上記ガスセルのガス導入管か
ら上記吐出口までの間にガス拡散板を設け、複数の上記
基板を上記ガスセルの拡散方向に対し直角方向に回転移
動する。In order to achieve this object, in the present invention, in the atomic layer epitaxy apparatus for repeating atomic layer epitaxy by alternately irradiating a substrate with plural kinds of source gases from a gas cell, A plurality of gas cells are arranged in a vacuum chamber, the shape of the discharge port of the gas cell is substantially rectangular, a gas diffusion plate is provided between the gas introduction pipe of the gas cell and the discharge port, and a plurality of the substrates are provided in the gas cell. It rotates and moves in the direction perpendicular to the diffusion direction.
【０００７】この場合、上記ガスセルから供給される上
記原料ガスを、成長中において一定流量に保持するして
もよい。In this case, the source gas supplied from the gas cell may be maintained at a constant flow rate during growth.
【０００８】また、ドーパントガスが供給されるガスセ
ルを設置してもよい。A gas cell to which the dopant gas is supplied may be installed.
【０００９】また、上記ガスセルにヒータを設けてもよ
い。A heater may be provided in the gas cell.
【００１０】また、上記原料ガスを有機金属ガスとして
もよい。The raw material gas may be an organic metal gas.
【００１１】また、複数種の上記原料ガスを１つの上記
ガスセルから上記基板に照射してもよい。Further, the substrate may be irradiated with a plurality of kinds of the raw material gas from one of the gas cells.
【００１２】[0012]
【作用】この原子層エピタキシー装置においては、基板
をガスセルの拡散方向に対し直角方向に移動させること
により、基板全面にわたり均一な強度の分子線を照射す
ることができるから、ガスセルと基板との距離を短くす
ることができ、また基板の回転により原料ガスを切り換
えることができるから、バルブ、シャッタの開閉動作が
必要なくなる。In this atomic layer epitaxy apparatus, by moving the substrate in a direction perpendicular to the diffusion direction of the gas cell, it is possible to irradiate a molecular beam of uniform intensity over the entire surface of the gas cell. Can be shortened, and the source gas can be switched by rotating the substrate, so that the valve and shutter opening / closing operations are not required.
【００１３】[0013]
【実施例】以下、この発明を実施例により詳細に説明す
る。EXAMPLES The present invention will now be described in detail with reference to examples.
【００１４】図１はこの発明に係る原子層エピタキシー
装置を示す平断面図、図２は図１に示した原子層エピタ
キシー装置の正断面図、図３は図１に示した原子層エピ
タキシー装置の一部を示す平断面図、図４は図１に示し
た原子層エピタキシー装置の一部を示す正断面図であ
る。円筒状の真空チャンバ１６の上部に基板回転機構２
９が設置され、基板回転機構２９によって基板保持体１
３が回転される。基板保持体１３に基板ホルダ２２およ
び基板ホルダ２２の間に配置されたシールド板２３が取
り付けられ、基板ホルダ２２に複数の基板１５がそれぞ
れ保持されている。また、基板保持体１３と円筒状のシ
ュラウド１８の内壁との間には干渉しない程度のわずか
な隙間が設けられている。ガスセル２０、２４、２６、
２５はベローズ２１を介して真空チャンバ１６の側面に
取り付けられ、ガスセル２０、２４、２６、２５と基板
１５との距離を選択できるようになっている。シュラウ
ド１８の側面にガスセル２０、２４、２６、２５を基板
１５に直接対向させるためのガスセル導入口１９が設け
られている。また、シュラウド１８には各ガスセル導入
口１９の間に排気口１７が設けられている。円筒状の加
熱面を持つ基板ヒータ２７は真空チャンバ１６の中央に
配置されたヒータ保持部材２８によって保持され、基板
ヒータ２７は回転する基板１５を背面から輻射加熱す
る。ここで、基板ヒータ２７は基板１５とともに回転さ
せる必要がないので固定である。また、真空チャンバ１
６に放出された原料ガスおよび真空チャンバ１６の内部
の構成部材からの放出ガスは、真空チャンバ１６の下部
の排気口３０に接続されたターボ分子ポンプ、ディフュ
ージョンポンプ等の排気流量が大きくかつ到達圧力が低
い真空排気装置３１によって真空チャンバ１６の外部に
排気される。さらに、ガスセル２０、２４、２６、２５
の吐出口の形状は長辺が少なくとも基板１５の直径より
も長い長方形であり、原料ガスはバルブ１４およびガス
導入管７を通過後、内部にガス拡散板８が配置され、ガ
スシールド板３で囲まれたガス拡散ゾーンを通過して放
出される。ガス拡散ゾーンを通過した際の分子線９の強
度分布はガス拡散板８によって縦方向になだらかな分布
となり、基板１５にほぼ均一に照射される。熱分解が必
要な原料ガスの場合は、このガス拡散ゾーンをヒータ５
によって所定の熱分解温度以上に加熱する。ヒータ５の
外側には熱シールド板４が設けられている。FIG. 1 is a plan sectional view showing an atomic layer epitaxy apparatus according to the present invention, FIG. 2 is a front sectional view of the atomic layer epitaxy apparatus shown in FIG. 1, and FIG. 3 is a view of the atomic layer epitaxy apparatus shown in FIG. FIG. 4 is a plan sectional view showing a part thereof, and FIG. 4 is a front sectional view showing a part of the atomic layer epitaxy apparatus shown in FIG. The substrate rotating mechanism 2 is provided on the upper portion of the cylindrical vacuum chamber 16.
9 is installed, and the substrate rotation mechanism 29 causes the substrate holder 1
3 is rotated. A substrate holder 22 and a shield plate 23 arranged between the substrate holders 22 are attached to the substrate holder 13, and a plurality of substrates 15 are respectively held by the substrate holder 22. In addition, a slight gap is provided between the substrate holder 13 and the inner wall of the cylindrical shroud 18 so as not to interfere. Gas cells 20, 24, 26,
25 is attached to the side surface of the vacuum chamber 16 via a bellows 21, and the distance between the gas cells 20, 24, 26, 25 and the substrate 15 can be selected. A gas cell introduction port 19 for directly facing the gas cells 20, 24, 26, 25 to the substrate 15 is provided on the side surface of the shroud 18. Further, the shroud 18 is provided with an exhaust port 17 between each gas cell inlet port 19. The substrate heater 27 having a cylindrical heating surface is held by a heater holding member 28 arranged in the center of the vacuum chamber 16, and the substrate heater 27 radiatively heats the rotating substrate 15 from the back surface. Here, the substrate heater 27 is fixed because it does not need to be rotated together with the substrate 15. Also, the vacuum chamber 1
The raw material gas released in 6 and the gas released from the components inside the vacuum chamber 16 have a large exhaust flow rate and a reached pressure of a turbo molecular pump, a diffusion pump, etc. connected to the exhaust port 30 in the lower part of the vacuum chamber 16. Is evacuated to the outside of the vacuum chamber 16 by the low vacuum evacuation device 31. Furthermore, the gas cells 20, 24, 26, 25
The discharge port has a rectangular shape whose long side is longer than at least the diameter of the substrate 15. The raw material gas passes through the valve 14 and the gas introduction pipe 7, and then the gas diffusion plate 8 is arranged inside the gas shielding plate 3. It is released through the enclosed gas diffusion zone. The intensity distribution of the molecular beam 9 when passing through the gas diffusion zone becomes a gentle distribution in the vertical direction by the gas diffusion plate 8, and the substrate 15 is irradiated almost uniformly. In the case of a raw material gas that needs to be pyrolyzed, this gas diffusion zone is used for the heater 5
To heat above a predetermined thermal decomposition temperature. A heat shield plate 4 is provided outside the heater 5.
【００１５】この原子層エピタキシー装置によって第１
種〜第４種の原料ガスを交互に照射しながら原子層エピ
タキシーを行なうには、基板保持体１３を図１の時計方
向に一定速度（原料原子の基板１５の表面への付着とマ
イグレーションのための時間が最も大きい原料種におい
て、その時間を十分に取ることができる速度）で回転し
た状態で、ガスセル２０、２４、２６、２５に供給する
ガス流量を一定に保持し、ガスセル２０、２４、２６、
２５から基板１５に第１種〜第４種の原料ガスを照射す
る。ここで、基板１５はガス分子線の拡散方向と直角な
方向に移動するから、基板１５の全面にわたって分子線
を均一な強度分布で照射することができ、シュラウド１
８の壁面と基板１５およびシールド板２３によって形成
される略閉空間の圧力は平衡状態となる。さらに、基板
１５に直接照射されなかった余剰ガスと基板１５の表面
から再放出されたガスはシュラウド１８の壁面に付着す
るか、ガスセル２０、２４、２６、２５とシュラウド１
８との隙間から放出され、真空排気装置３１によって排
気される。また、シールド板２３は真空チャンバ１６の
中央部への原料ガスの周り込みを防ぐ。さらに、シュラ
ウド１８には各ガスセル導入口１９の間に排気口１７が
設けられているから、基板１５がガスセル２０、２４、
２６、２５に対向しながら回転する過程で、基板１５の
表面上に残留する原料ガスを排出することができるの
で、各原料ガス間の相互汚染を防止することができる。With this atomic layer epitaxy apparatus, the first
In order to perform atomic layer epitaxy while alternately irradiating the source gases of the first to fourth types, the substrate holder 13 is moved at a constant speed in the clockwise direction in FIG. 1 (for attachment and migration of the source atoms to the surface of the substrate 15). In the raw material species having the largest time, the gas flow rate to be supplied to the gas cells 20, 24, 26, 25 is kept constant in a state of being rotated at a speed capable of sufficiently taking the time, and the gas cells 20, 24, 26,
From 25, the substrate 15 is irradiated with the first to fourth source gases. Here, since the substrate 15 moves in the direction perpendicular to the diffusion direction of the gas molecular beam, the molecular beam can be irradiated with a uniform intensity distribution over the entire surface of the substrate 15, and the shroud 1
The pressure in the substantially closed space formed by the wall surface 8 and the substrate 15 and the shield plate 23 is in equilibrium. Further, the surplus gas not directly irradiated to the substrate 15 and the gas re-emitted from the surface of the substrate 15 adhere to the wall surface of the shroud 18, or the gas cells 20, 24, 26, 25 and the shroud 1
8 is discharged from the gap between the vacuum chamber 8 and the vacuum exhaust device 31. Further, the shield plate 23 prevents the raw material gas from entering the central portion of the vacuum chamber 16. Further, since the shroud 18 is provided with the exhaust port 17 between each gas cell inlet port 19, the substrate 15 is connected to the gas cells 20, 24,
Since the raw material gas remaining on the surface of the substrate 15 can be discharged in the process of rotating while facing 26 and 25, mutual contamination between the respective raw material gases can be prevented.
【００１６】この原子層エピタキシー装置においては、
図７に示す原子層エピタキシー装置のように、基板１５
に対するガス分子線の強度分布の均一性を確保するため
の適当な拡散空間を必要としないから、基板１５とガス
セル２０、２４、２６、２５の先端との距離を充分小さ
くすることができるので、真空チャンバ１６の容積を小
さくすることができるばかりでなく、基板１５に直接照
射されない余剰ガスが少なくなるため、ガスセル２０、
２４、２６、２５に供給された原料ガスの大半は薄膜の
成長に寄与することになる。したがって、原子層エピタ
キシー的な成長を行なう場合は、原理的には１原子層分
程度という極めてわずかな原料ガス供給量で済む。この
ことは、シュラウド１８の壁面と基板１５およびシール
ド板２３によって形成される略閉空間の圧力を低い状態
に維持し、成長中の薄膜への不純物の混入を少なくする
ためには極めて重要である。また、成長に無関係なガス
によって基板１５の面上での原料原子の付着や結晶化が
阻害されにくくなるため、低い成長温度でも結晶欠陥が
少ない良質な薄膜を得ることにつながる。In this atomic layer epitaxy apparatus,
As in the atomic layer epitaxy device shown in FIG.
Since a proper diffusion space for ensuring the uniformity of the intensity distribution of the gas molecular beam with respect to is not required, the distance between the substrate 15 and the tips of the gas cells 20, 24, 26, 25 can be made sufficiently small. Not only can the volume of the vacuum chamber 16 be reduced, but the surplus gas that is not directly irradiated on the substrate 15 is reduced, so that the gas cell 20,
Most of the source gas supplied to 24, 26 and 25 contributes to the growth of the thin film. Therefore, in the case of performing atomic layer epitaxy, in principle, an extremely small amount of raw material gas supply of about one atomic layer is sufficient. This is extremely important for maintaining a low pressure in the substantially closed space formed by the wall surface of the shroud 18, the substrate 15 and the shield plate 23, and reducing impurities mixed into the growing thin film. .. Further, the deposition of the source atoms on the surface of the substrate 15 and the crystallization thereof are less likely to be hindered by the gas irrelevant to the growth, so that a good quality thin film with few crystal defects can be obtained even at a low growth temperature.
【００１７】また、この原子層エピタキシー装置におい
ては、成長に寄与しない余剰ガスの比率を非常に小さく
することができるので、原料ガスの切換時間を短くする
ことができるとともに、複数の基板を同時に処理するこ
とができるため、原子層エピタキシーを極めて効率良く
行なうことができる。ここで、図１等に示した原子層エ
ピタキシー装置の成膜効率と図７に示した原子層エピタ
キシー装置の成膜効率とを比較してみる。所定の膜厚に
なるまでの原料ガスの切換回数をＳ、図７に示した原子
層エピタキシー装置における第１種の原料ガスの照射時
間をＴ1、第２種の原料ガスの照射時間をＴ2、また原料
ガスの切換の際に要する残留ガスの排気時間をＴ3と
し、Ｔ1＞Ｔ2とすると、図７に示した原子層エピタキシ
ー装置の場合の成長はシリーズに行なわれるため、所定
の膜厚を得るに要する時間は基板１枚当たりＳ（Ｔ1＋
Ｔ2＋２Ｔ3）となる。一方、図１等に示した原子層エピ
タキシー装置において、照射時間を長く取る必要のある
第１種の原料ガスの照射時間Ｔ1に合わせて基板１５の
回転速度を設定し、基板１５を次のガスセル２０、２
４、２６、２５に対向させるまでの時間をＴ4、原子層
エピタキシー装置内の基板１５の設置枚数をＫとする
と、所定の膜厚を得るに要する時間は基板１枚当たりＳ
｛Ｋ（Ｔ1＋Ｔ4）｝／Ｋ＝Ｓ（Ｔ1＋Ｔ4）となる。すな
わち、Ｓ｛Ｔ2＋（２Ｔ3−Ｔ4）｝の時間が削減でき
る。たとえば、格子定数が５．６Å程度の３−５族のＧ
ａＡｓや２−６族のＺｎＳｅの場合、原子層エピタキシ
ーによって１μｍの膜厚を得るには、１８００回程度の
原料ガスの切り換えを行なう必要があるため、削減でき
る時間は非常に大きい。すなわち、かりにＳ＝１８００
回、Ｔ2＝７ｓ、Ｔ3＝１０ｓ、Ｔ4＝１ｓとすると、基
板１枚当たり１４．５ｈの時間が削減できる。また、図
１等に示した原子層エピタキシー装置では、基板保持体
１３の回転速度は照射時間を最も長く取る必要のある原
料ガスの照射時間で律速されているため、原料ガスの種
類が増えても処理速度は増加しないという利点がある。Further, in this atomic layer epitaxy apparatus, the ratio of the surplus gas that does not contribute to the growth can be made extremely small, so that the switching time of the source gas can be shortened and a plurality of substrates can be simultaneously processed. Therefore, atomic layer epitaxy can be performed very efficiently. Here, the film forming efficiency of the atomic layer epitaxy apparatus shown in FIG. 1 and the like will be compared with the film forming efficiency of the atomic layer epitaxy apparatus shown in FIG. The number of times the source gas is switched to a predetermined thickness is S, the irradiation time of the source gas of the first type in the atomic layer epitaxy apparatus shown in FIG. 7 is T 1 , and the irradiation time of the source gas of the second type is T 1 . 2 , and when the exhaust time of the residual gas required when switching the source gas is T 3 and T 1 > T 2 , the growth in the case of the atomic layer epitaxy apparatus shown in FIG. The time required to obtain the film thickness of S (T 1 +
T 2 + 2T 3 ). On the other hand, in the atomic layer epitaxy apparatus shown in FIG. 1 etc., the rotation speed of the substrate 15 is set in accordance with the irradiation time T 1 of the first type source gas, which requires a long irradiation time, and the substrate 15 is Gas cell 20, 2
Assuming that the time required to face 4 , 4 , and 25 is T 4 and the number of substrates 15 installed in the atomic layer epitaxy apparatus is K, the time required to obtain a predetermined film thickness is S per substrate.
{K (T 1 + T 4 )} / K = S (T 1 + T 4 ). That is, the time of S {T 2 + (2T 3 −T 4 )} can be reduced. For example, G in the 3-5 group with a lattice constant of about 5.6 Å
In the case of aAs or ZnSe of the 2-6 group, in order to obtain a film thickness of 1 μm by atomic layer epitaxy, it is necessary to switch the source gas about 1800 times, so the time that can be saved is very long. That is, S = 1800
If T 2 = 7 s, T 3 = 10 s, and T 4 = 1 s, the time for each substrate can be reduced by 14.5 h. Further, in the atomic layer epitaxy apparatus shown in FIG. 1 and the like, since the rotation speed of the substrate holder 13 is limited by the irradiation time of the raw material gas that requires the longest irradiation time, the number of types of raw material gas increases. However, there is an advantage that the processing speed does not increase.
【００１８】なお、この発明に係る原子層エピタキシー
装置は、異種原子の付着係数に比べ同一原子の付着係数
がはるかに小さく、原子層単位での交互の積層が可能な
原料種であれば、有機物、無機物にかかわらず効率的な
原子層エピタキシーが可能である。また、原子層ドーピ
ングについても同様であるため、ドーピング濃度の制御
性が向上するばかりでなく、高濃度のドーピングも可能
である。The atomic layer epitaxy apparatus according to the present invention has a much smaller sticking coefficient of the same atom than the sticking coefficient of different atoms. Efficient atomic layer epitaxy is possible regardless of inorganic substances. Since the same applies to atomic layer doping, not only the controllability of the doping concentration is improved, but also high concentration doping is possible.
【００１９】つぎに、この発明に係る原子層エピタキシ
ー装置による結晶成長方法について２−６族化合物半導
体を例に説明する。Next, a crystal growth method using the atomic layer epitaxy apparatus according to the present invention will be described by taking a group 2-6 compound semiconductor as an example.
【００２０】２族原素であるＺｎ、Ｃｄと６族原素であ
るＳｅ、Ｓ、Ｔｅとの組合せからなるワイドバンドギャ
プの化合物半導体は、直接遷移型のバンド構造を持ち、
電子線、レーザ光の照射によって比較的容易に０．４〜
０．５μｍの短波長光を取り出すことができる。また、
構成元素の組成制御により、禁制帯幅を１．５〜３．８
ｅＶの範囲で変えることができること等から、高効率の
短波長可視発光素子材料としての応用が期待されてい
る。たとえば、発光ダイオードの場合は、図５に示すよ
うな素子構造が考えられる。図５において、基板１５に
はｎ型ＧａＡｓを用い、ｎ型層３４にはＺｎＳｅに３族
元素のＧａをドーピングしたものを用い、ｐ型層３３に
はＺｎＳｅに５族元素のＮをドーピングしたものを用
い、これらを順次成長させ、電極３２を設ける。また、
半導体レーザの場合は、図６に示すような基本構造が考
えられる。一例として「光学、第２０巻、第４号、２１
６〜２１７頁（１９９１）」に記載されている理論的発
振波長が０．５２μｍの半導体レーザへの応用について
説明する。図６において、基板１５にはｎ型ＧａＡｓを
用い、ｎ型クラッド層３９にはＺｎＳＳｅの混晶に３族
元素のＧａをドーピングしたものを用い、活性層３８に
はＺｎＳＴｅの混晶を用い、ｐ型クラッド層３７にはＺ
ｎＳＳｅの混晶に５族元素のＮをドーピングしたものを
用い、これらを順次成長させて、ダブルヘテロ構造を形
成し、電極３６を設ける。このような３元の混晶によっ
て各層を形成するのは、ＧａＡｓの基板１５との格子整
合性を得るためであり、ｎ型クラッド層３９のＺｎＳＳ
ｅにおいてＳとＳｅとの組成比を６：９４、活性層３８
のＺｎＳＴｅにおいてＳとＴｅとの組成比を６５：３
５、ｐ型クラッド層３７のＺｎＳＳｅにおいてＳとＳｅ
との組成比を６：９４とすることが望ましい。ここで、
たとえば２族原素であるＺｎの原料としてＤＭＺ、６族
原素であるＳｅ、Ｓ、Ｔｅの原料としてはＤＭＳｅ、Ｄ
ＭＳ、ＤＭＴｅ等の有機金属ガスを用いて、各ガスセル
で熱分解した上で基板１５に照射する。ｎ型のドーパン
トであるＧａの原料としてＴＭＧ等の有機金属ガスを用
い、ｐ型のドーパントであるＮの原料としてはＮＨ3ガ
スを用い、各ガスセルで熱分解した上で基板１５に照射
する。A wide band gap compound semiconductor composed of a combination of Group 2 elements Zn, Cd and Group 6 elements Se, S, Te has a direct transition type band structure.
Irradiation with an electron beam or laser light makes it relatively easy 0.4 ~
Light with a short wavelength of 0.5 μm can be extracted. Also,
By controlling the composition of constituent elements, the forbidden band width is 1.5 to 3.8.
Since it can be changed within the range of eV, it is expected to be applied as a highly efficient short wavelength visible light emitting device material. For example, in the case of a light emitting diode, an element structure as shown in FIG. 5 can be considered. In FIG. 5, n-type GaAs is used for the substrate 15, ZnSe doped with Ga of Group 3 element is used for the n-type layer 34, and ZnSe is doped with N of Group 5 element for the p-type layer 33. The electrode 32 is provided by sequentially growing these. Also,
In the case of a semiconductor laser, a basic structure as shown in FIG. 6 can be considered. As an example, “Optics, Volume 20, No. 4, 21
The application to a semiconductor laser having a theoretical oscillation wavelength of 0.52 μm described in “Pages 6 to 217 (1991)” will be described. In FIG. 6, n-type GaAs is used for the substrate 15, ZnSSe mixed crystal doped with Ga of Group 3 element is used for the n-type cladding layer 39, and ZnSTe mixed crystal is used for the active layer 38. Z for the p-type cladding layer 37
A mixed crystal of nSSe doped with N of Group 5 element is used, and these are sequentially grown to form a double hetero structure, and an electrode 36 is provided. Each layer is formed by such a ternary mixed crystal in order to obtain lattice matching with the substrate 15 of GaAs, and ZnSS of the n-type cladding layer 39 is formed.
In e, the composition ratio of S and Se is 6:94, and the active layer 38
ZnSTe has a composition ratio of S and Te of 65: 3.
5, S and Se in ZnSSe of the p-type cladding layer 37
It is desirable that the composition ratio of and is 6:94. here,
For example, DMZ is used as a raw material for Zn, which is a Group 2 element, and DMSe, D is used as a source for Se, S, and Te, which are Group 6 elements.
An organic metal gas such as MS or DMTe is used for thermal decomposition in each gas cell, and then the substrate 15 is irradiated. An organic metal gas such as TMG is used as a raw material of Ga, which is an n-type dopant, and NH 3 gas is used as a raw material of N, which is a p-type dopant.
【００２１】以上説明したような発光ダイオードあるい
は半導体レーザをこの発明に係る原子層エピタキシー装
置によって、どのように成長させるかについて以下に説
明する。How to grow the above-described light emitting diode or semiconductor laser by the atomic layer epitaxy apparatus according to the present invention will be described below.
【００２２】上記の発光ダイオードの場合、ｎ型層３４
の成長時は、ＤＭＺはガスセル２０から、ＤＭＳｅはガ
スセル２６から、ＴＭＧはガスセル２４から熱分解した
上で、基板１５に照射する。ここで、ＤＭＺとＤＭＳｅ
との流量比は１：１程度に維持する。つぎに、ｐ型層３
３の成長時は、ＤＭＺ、ＤＭＳｅの供給はそのままで、
ＴＭＧのガスセル２４のバルブ１４を閉じて、ガスセル
２５からＮＨ3を熱分解した上で基板１５に照射する。
一方、基板ヒータ２７によって基板１５の温度を２５０
〜４００℃に保持し、基板保持体１３の回転速度を原料
原子の基板１５の表面への付着とマイグレーションのた
めの時間が最も大きい原料種において、その時間を十分
に取ることができる程度とする。In the case of the above light emitting diode, the n-type layer 34
During the growth of DMZ, DMZ is thermally decomposed from the gas cell 20, DMSe is decomposed from the gas cell 26, and TMG is decomposed from the gas cell 24, and then the substrate 15 is irradiated. Where DMZ and DMSe
The flow rate ratio between and is maintained at about 1: 1. Next, the p-type layer 3
At the time of growth of 3, the supply of DMZ and DMSe is unchanged,
The valve 14 of the TMG gas cell 24 is closed, NH 3 is thermally decomposed from the gas cell 25, and then the substrate 15 is irradiated.
On the other hand, the temperature of the substrate 15 is set to 250 by the substrate heater 27.
The temperature is kept at ˜400 ° C., and the rotation speed of the substrate holder 13 is set to such an extent that the time is long enough for the raw material species that has the longest time for the attachment and migration of the raw material atoms to the surface of the substrate 15. ..
【００２３】上記の半導体レーザの場合、ｎ型クラッド
層３９の成長時は、ＤＭＺはガスセル２０から、ＤＭＳ
ｅはガスセル２６から、ＤＭＳはガスセル２４から、Ｔ
ＭＧはガスセル２５から熱分解した上で基板１５に照射
する。ここで、ＤＭＺ、ＤＭＳ、ＤＭＳｅの流量比は
１：０．０６：０．９４程度に維持する。つぎに、活性
層３８の成長時は、ガスセル２６の原料供給ラインをＤ
ＭＴｅに切り換え、ＴＭＧのガスセル２５のバルブ１４
を閉じる。ここで、ＤＭＺ、ＤＭＳ、ＤＭＴｅの流量比
は１：０．６５：０．３５程度に維持する。つぎに、ｐ
型クラッド層３７の成長時は、ガスセル２６の原料供給
ラインをＤＭＳｅに切り換え、ガスセル２５の原料供給
ラインをＮＨ3に切り換える。ここで、ＤＭＺ、ＤＭ
Ｓ、ＤＭＳｅの流量比は１：０．０６：０．９４程度に
維持する。一方、基板ヒータ２７によって基板１５の温
度を２５０〜４００℃に保持し、基板保持体１３の回転
速度を原料原子の基板１５の表面への付着とマイグレー
ションのための時間が最も大きい原料種において、その
時間を十分に取ることができる程度とする。In the case of the above semiconductor laser, when the n-type cladding layer 39 is grown, the DMZ is fed from the gas cell 20 to the DMS.
e from the gas cell 26, DMS from the gas cell 24, T
The MG is thermally decomposed from the gas cell 25 and then irradiated onto the substrate 15. Here, the flow rate ratio of DMZ, DMS, and DMSe is maintained at about 1: 0.06: 0.94. Next, when the active layer 38 is grown, the raw material supply line of the gas cell 26 is set to D
Switch to MTe, valve 14 of TMG gas cell 25
Close. Here, the flow rate ratio of DMZ, DMS, and DMTe is maintained at about 1: 0.65: 0.35. Next, p
When the mold cladding layer 37 is grown, the raw material supply line of the gas cell 26 is switched to DMSe and the raw material supply line of the gas cell 25 is switched to NH 3 . Where DMZ, DM
The flow rate ratio of S and DMSe is maintained at about 1: 0.06: 0.94. On the other hand, the temperature of the substrate 15 is kept at 250 to 400 ° C. by the substrate heater 27, and the rotation speed of the substrate holder 13 is the maximum in the raw material species in which the time for attachment and migration of the raw material atoms to the surface of the substrate 15 is the longest. The time should be long enough.
【００２４】以上、この発明に係る原子層エピタキシー
装置による２−６族化合物半導体およびその混晶の結晶
成長方法を、発光ダイオード、半導体レーザを例に取っ
て述べてきたが、３−５族化合物半導体およびその他の
混晶等の場合も同様であり、この発明は適応する原料種
およびその組合せは限定しない。The crystal growth method of the 2-6 group compound semiconductor and the mixed crystal thereof by the atomic layer epitaxy apparatus according to the present invention has been described above by taking the light emitting diode and the semiconductor laser as examples. The same applies to semiconductors and other mixed crystals, and the present invention does not limit applicable raw material species and combinations thereof.
【００２５】なお、上述実施例においては、ガスセル２
０、２４、２６、２５に供給する原料ガスを１種類とし
たが、複数種の原料ガスを所定の混合比で１つのガスセ
ル２０、２４、２６、２５から供給してもよい。In the above embodiment, the gas cell 2
Although one type of raw material gas is supplied to 0, 24, 26 and 25, a plurality of types of raw material gas may be supplied from one gas cell 20, 24, 26 and 25 at a predetermined mixing ratio.
【００２６】[0026]
【発明の効果】以上説明したように、この発明に係る原
子層エピタキシー装置においては、ガスセルと基板との
距離を短くすることができるから、真空チャンバの容積
を小さくすることができるばかりでなく、成長に寄与し
ない余剰ガスの比率を非常に小さくすることができるの
で、原料ガスの切換時間を短くすることができるととも
に、複数の基板を同時に処理することができるため、原
子層エピタキシーを極めて効率良く行なうことができ
る。また、バルブの開閉動作が必要なくなるから、ガス
流量の変動がなくなり、原料ガスの安定な供給ができ、
また機構動作が単純化され、装置の信頼性が向上する。
このように、この発明の効果は顕著である。As described above, in the atomic layer epitaxy apparatus according to the present invention, since the distance between the gas cell and the substrate can be shortened, not only can the volume of the vacuum chamber be reduced, but also Since the ratio of the surplus gas that does not contribute to the growth can be made extremely small, the switching time of the raw material gas can be shortened and a plurality of substrates can be processed at the same time, so that atomic layer epitaxy can be performed very efficiently. Can be done. Also, since the opening and closing operation of the valve is unnecessary, there is no fluctuation in the gas flow rate and a stable supply of the raw material gas can be achieved.
Further, the mechanical operation is simplified and the reliability of the device is improved.
As described above, the effect of the present invention is remarkable.
【図１】この発明に係る原子層エピタキシー装置を示す
平断面図である。FIG. 1 is a plan sectional view showing an atomic layer epitaxy apparatus according to the present invention.
【図２】図１に示した原子層エピタキシー装置の正断面
図である。FIG. 2 is a front sectional view of the atomic layer epitaxy apparatus shown in FIG.
【図３】図１に示した原子層エピタキシー装置の一部を
示す平断面図である。3 is a plan sectional view showing a part of the atomic layer epitaxy apparatus shown in FIG.
【図４】図１に示した原子層エピタキシー装置の一部を
示す正断面図である。4 is a front sectional view showing a part of the atomic layer epitaxy apparatus shown in FIG.
【図５】発光ダイオードの基本構造図である。FIG. 5 is a basic structural diagram of a light emitting diode.
【図６】半導体レーザの基本構造図である。FIG. 6 is a basic structural diagram of a semiconductor laser.
【図７】従来の原子層エピタキシー装置を示す断面図で
ある。FIG. 7 is a cross-sectional view showing a conventional atomic layer epitaxy apparatus.
７…ガス導入管 ８…ガス拡散板 １５…基板 １６…真空チャンバ ２０、２４、２５、２６…ガスセル 7 ... Gas introduction pipe 8 ... Gas diffusion plate 15 ... Substrate 16 ... Vacuum chamber 20, 24, 25, 26 ... Gas cell
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 33/00 Ｄ 8934−4Ｍ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI technical display location H01L 33/00 D 8934-4M
Claims (6)
交互に照射して、原子層エピタキシーを繰り返す原子層
エピタキシー装置において、上記ガスセルを真空チャン
バ内に複数配置し、上記ガスセルの吐出口の形状をほぼ
長方形とし、上記ガスセルのガス導入管から上記吐出口
までの間にガス拡散板を設け、複数の上記基板を上記ガ
スセルの拡散方向に対し直角方向に回転移動することを
特徴とする原子層エピタキシー装置。1. In an atomic layer epitaxy apparatus in which plural kinds of source gases are alternately irradiated from a gas cell on a substrate to repeat atomic layer epitaxy, a plurality of the gas cells are arranged in a vacuum chamber, and a gas outlet of the gas cell is arranged. An atom characterized in that the shape is substantially rectangular, a gas diffusion plate is provided between the gas introduction pipe of the gas cell and the discharge port, and the plurality of substrates are rotationally moved in a direction perpendicular to the diffusion direction of the gas cell. Layer epitaxy equipment.
を、成長中において一定流量に保持することを特徴とす
る請求項１記載の原子層エピタキシー装置。2. The atomic layer epitaxy apparatus according to claim 1, wherein the source gas supplied from the gas cell is maintained at a constant flow rate during growth.
置したことを特徴とする請求項１記載の原子層エピタキ
シー装置。3. The atomic layer epitaxy apparatus according to claim 1, further comprising a gas cell to which a dopant gas is supplied.
とする請求項１記載の原子層エピタキシー装置。4. The atomic layer epitaxy apparatus according to claim 1, wherein the gas cell is provided with a heater.
特徴とする請求項１記載の原子層エピタキシー装置。5. The atomic layer epitaxy apparatus according to claim 1, wherein the source gas is an organic metal gas.
ルから上記基板に照射することを特徴とする請求項１記
載の原子層エピタキシー装置。6. The atomic layer epitaxy apparatus according to claim 1, wherein the substrate is irradiated with a plurality of kinds of the raw material gas from one of the gas cells.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23610591A JPH05234899A (en) | 1991-09-17 | 1991-09-17 | Atomic layer epitaxy system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23610591A JPH05234899A (en) | 1991-09-17 | 1991-09-17 | Atomic layer epitaxy system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05234899A true JPH05234899A (en) | 1993-09-10 |
Family
ID=16995811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23610591A Pending JPH05234899A (en) | 1991-09-17 | 1991-09-17 | Atomic layer epitaxy system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05234899A (en) |
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