JPH05199019A - High frequency circuit package - Google Patents

Abstract

(57) [Summary] [Object] The present invention relates to a high-frequency circuit package, and an object of the present invention is to improve the performance and simplify the structure of the high-frequency circuit package using through holes in the input / output sections. In a high frequency circuit package including a wall 12 that separates a high frequency circuit formed on the upper surface of a dielectric substrate 11 from the outside, a microstrip line conductor 13 on the upper surface of the substrate 11 inside the wall 12 and a lower surface of the substrate 11 A ground conductor 14, a coplanar line conductor 15 on the lower surface, and a through hole 16 which is a through hole of the substrate 11 filled with the conductor so as to electrically connect the microstrip line conductor 13 and the coplanar line conductor 15 are provided. The microstrip line conductor 13 and the ground conductor 14 form a microstrip line, the coplanar line conductor 15 and the ground conductor 14 form a coplanar waveguide line, and both lines have the same characteristic impedance.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency circuit package in which a wall is provided around a high frequency circuit formed on a dielectric substrate so as to be isolated from the outside, and particularly in a signal input / output section with the package. The present invention relates to the realization of a high frequency circuit package with low reflection loss and insertion loss.

[0002]

2. Description of the Related Art In order to isolate a microwave / millimeter wave band high frequency circuit formed on a dielectric substrate from the surrounding environment, a wall is provided on the dielectric substrate to enclose the circuit, which is called a hermetic seal. It is common to do In a hermetically sealed high frequency circuit package, a line passing through a wall or a substrate needs to be provided for inputting and outputting a signal or the like to the inside, and a microstrip line or a coaxial line is used.

FIG. 16 is a diagram showing a high frequency package having a microstrip line penetrating a wall. In the figure, reference numeral 181 is a dielectric substrate, on which a circuit is formed. 182 is a wall for sealing, which is provided so as to surround the formed circuit. In fact, there is a lid on the top. 183, 185 and 188 are line conductors,
4 is a ground conductor. In the high-frequency signal line, the characteristic impedance of each part of the path must be matched to prevent the occurrence of reflection loss.

In the high frequency circuit package as shown in FIG. 16, a wall 182 is provided immediately above a portion 188 in the middle of the line conductor.
Need to be provided. Therefore, the line conductors 183, 18
In order to form a microstrip line having the same characteristic impedance with 5, 188 and the ground conductor 184, it is necessary to narrow the width of the line conductor portion 188 that is in contact with the wall 182 as shown in the figure. However, such a high-frequency package has a problem that the width of the line conductor becomes narrow and the portion 188 in the drawing becomes particularly narrow with respect to microwaves having a high frequency, so that it is very difficult to manufacture.

In another example of the input / output section of the high frequency circuit package, a method is also used in which the internal signal path is once exposed to the lower surface of the substrate through the through hole. Packages using such through-holes are also used for microwave circuits with relatively low frequencies, and the bonding pads for microwave / millimeter-wave circuits and semiconductor elements, and the hermetically sealed signal input / output section are separated. Since it can be simultaneously manufactured on one dielectric substrate, it has an advantage that manufacturing cost can be reduced.

FIG. 17 shows a conventional example of a high frequency package using through holes. Here, the line conductor 193 is provided on the upper surface of the dielectric substrate 191 surrounded by the wall 192, and the ground conductor 194 on the lower surface of the dielectric substrate 191 and the microstrip line are formed. A lead connection pattern 195 is provided on the lower surface of the dielectric substrate 191, and is connected to a lead 197 that is a lead line to the outside. Line conductor 193 and lead connection pattern 195
Are electrically connected to each other through a through hole 196 in which a through hole of the dielectric substrate 191 is filled with a conductor. Wall 19
2 is provided at the position shown.

A method of connecting the package of FIG. 17 to the outside will be briefly described. First, the lead 197 is connected to a microstrip line of an external circuit by soldering or the like. Then, in order to make the ground conductor of the microstrip line of the external circuit and the ground conductor of the microstrip line inside this package the same potential in the frequency band in which they are used, the ground conductor of the external circuit board and the ground conductor 194 of FIG. Connect with.

[0008]

However, in a high frequency package using through holes as shown in FIG. 17, the characteristic impedance of the lead connection pattern 195 is affected by the dielectric substrate, so that the characteristics of the microstrip line of the external circuit are affected. The characteristic impedance differs from the impedance, and signal reflection occurs at this portion.
Therefore, when a package using through holes as shown in FIG. 17 in the input / output section is used in a microwave / millimeter wave circuit, there is a problem that the reflection loss increases when the signal frequency is high. Furthermore, since the lead and the ground conductor are on the same surface,
It is necessary to provide an external strip line component with a connecting electrode on the same surface as the line conductor and connect the ground conductor to this, which causes a problem that the external circuit becomes complicated and the manufacturing cost increases. Further, in this case, since the lead and the ground conductor are simultaneously connected on the lower surface of the package, it is necessary to accurately control the amount of solder and perform the alignment.

As described above, the conventional high-frequency circuit package using through holes in the input / output section has a reflection loss in the lead section and a ground electrode for grounding the package and a through hole therefor in an external circuit. It was necessary to provide it, and it was not sufficient in terms of performance and cost. The present invention has been made in view of the above problems, and an object of the present invention is to improve the performance of a high-frequency circuit package using through holes in an input / output section and reduce the manufacturing cost of an external circuit to be connected.

[0010]

FIG. 1 is a diagram showing a first basic structure of a high frequency circuit package of the present invention. In the figure, 11 is a dielectric substrate having a high-frequency circuit formed on its upper surface. Reference numeral 12 is a wall for separating the formed high frequency circuit from the outside. A microstrip line conductor 13 forms a part of an input / output line with the high frequency circuit and is provided on the upper surface of the dielectric substrate 11 inside the wall 12.
Reference numeral 14 is a ground conductor provided on the lower surface of the dielectric substrate 11. Reference numeral 15 is a coplanar line conductor that forms a part of the input / output line, and is provided on the lower surface of the dielectric substrate 11. 16
Is a through hole in which a through hole of the dielectric substrate 11 is filled with a conductor, and electrically connects the microstrip line conductor 13 and the coplanar line conductor 15. The microstrip line conductor 13 and the ground conductor 14 form a microstrip line, and their shapes and the like are determined so as to have a predetermined characteristic impedance. The coplanar line conductor 15 and the ground conductor 14 form a coplanar waveguide line, and their shapes and the like are determined so as to have the same characteristic impedance as the characteristic impedance of the microstrip line.

FIG. 2 is a diagram showing a second basic configuration of the high frequency circuit package of the present invention. In the figure, reference numeral 21 is a dielectric substrate on which a high frequency circuit is formed. Two
Reference numeral 2 is a wall for separating the formed high frequency circuit from the outside. A microstrip line conductor 23 forms a part of an input / output line with the high frequency circuit, and is provided on the upper surface of the dielectric substrate 21 inside the wall 22. Reference numeral 24 is a first ground conductor provided on the lower surface of the dielectric substrate 21. Reference numeral 25 denotes a coplanar line conductor that forms a part of the input / output line, and is provided on the lower surface of the dielectric substrate 21. 26 is a through hole in which a conductor is filled in the through hole of the dielectric substrate 21,
The microstrip line conductor 23 and the coplanar line conductor 25 are electrically connected. Reference numeral 27 is a second ground conductor provided on the upper surface of the dielectric substrate 21, on which a part of the wall 22 is provided. The microstrip line conductor 23 and the first ground conductor 24 form a microstrip line,
The shape and the like are determined so as to have a predetermined characteristic impedance. Coplanar line conductor 25 and first ground conductor 2
4 and the second ground conductor 27 form a coplanar waveguide line, and their shapes and the like are determined so as to have the same characteristic impedance as the characteristic impedance of the microstrip line.

FIG. 3 is a diagram showing a third basic configuration of the high frequency circuit package of the present invention. In the figure, 31 is a dielectric substrate having a high frequency circuit formed on its upper surface. 32
Is a wall for separating the formed high frequency circuit from the outside. A coplanar line conductor 33 forms a part of an input / output line with the high frequency circuit, and is provided on the upper surface of the dielectric substrate 31 inside the wall 32. Reference numeral 34 denotes a ground conductor provided on the upper surface of the dielectric substrate 31, on which a part of the wall 32 is provided. A microstrip line conductor 35 forms a part of the input / output line, and is provided on the lower surface of the dielectric substrate 31. Reference numeral 36 is a through hole in which a through hole of the dielectric substrate 31 is filled with a conductor, and electrically connects the coplanar line conductor 33 and the microstrip line conductor 35. The coplanar line conductor 33 and the ground conductor 34 form a coplanar waveguide line, and their shapes and the like are determined so as to have a predetermined characteristic impedance. The microstrip line conductor 35 and the ground conductor 34 form a microstrip line, and their shapes and the like are determined so as to have the same characteristic impedance as the characteristic impedance of the coplanar waveguide line.

FIG. 4 is a diagram showing a fourth basic configuration of the high frequency circuit package of the present invention. In the figure, reference numeral 41 is a dielectric substrate on which a high frequency circuit is formed. Reference numeral 42 is a wall for separating the formed high frequency circuit from the outside.
Reference numeral 43 denotes a coplanar line conductor which forms a part of an input / output line with the high frequency circuit, and which is a dielectric substrate 41 inside the wall 42.
Is provided on the upper surface of. Reference numeral 44 denotes a first ground conductor provided on the upper surface of the dielectric substrate 41, on which a part of the wall 42 is provided. Reference numeral 45 denotes a microstrip line conductor that forms a part of the input / output line, and is provided on the lower surface of the dielectric substrate 41. Reference numeral 46 is a through hole in which a conductor is filled in the through hole of the dielectric substrate 41, and electrically connects the coplanar line conductor 43 and the microstrip line conductor 45. 47 is a second ground conductor provided on the lower surface of the dielectric substrate 41. Coplanar line conductor 43 and first ground conductor 4
4 and the second ground conductor 47 form a coplanar waveguide line, and their shapes and the like are determined so as to have a predetermined characteristic impedance. Microstrip line conductor 4
5 and the first ground conductor 44 form a microstrip line, and their shapes and the like are determined so as to have the same characteristic impedance as the characteristic impedance of the coplanar waveguide line.

FIG. 5 is a diagram showing a fifth basic structure of the high-frequency circuit package of the present invention. In the figure, reference numeral 51 is a dielectric substrate on which a high frequency circuit is formed. Reference numeral 52 is a wall for separating the formed high frequency circuit from the outside.
Reference numeral 53 is a first microstrip line conductor forming a part of an input / output line with the high frequency circuit, and is provided on the upper surface of the dielectric substrate 51 inside the wall 52. Reference numeral 54 is a first ground conductor provided on the lower surface of the dielectric substrate 51. Reference numeral 55 is a second microstrip line conductor that forms a part of the input / output line, and is provided on the lower surface of the dielectric substrate 51. Reference numeral 57 denotes a second ground conductor provided on the upper surface of the dielectric substrate 51, on which a part of the wall 42 is provided. Reference numeral 56 is a through hole in which a through hole of the dielectric substrate 51 is filled with a conductor, and electrically connects the first microstrip line conductor 53 and the second microstrip line conductor 55. The first microstrip line conductor 53 and the first ground conductor 54 form a microstrip line, and the second microstrip line conductor 55 and the second ground conductor 57 also form a microstrip line. Are defined so that they are the same.

[0015]

A flat waveguide is used for the input / output portion of the circuit because it is smaller and easier to manufacture than a coaxial cable or a waveguide. The planar waveguide includes the microstrip line shown in FIG. 6 and the coplanar waveguide shown in FIG. In the microstrip line of FIG. 6, the line conductor 103 is formed on the upper surface of the dielectric substrate 101, and the ground conductor 104 is formed on the lower surface.
The ground conductor 104 is sufficiently wider than Dielectric substrate 10
Depending on the relative permittivity of 1 or the like, the thickness h of the dielectric substrate 101,
By determining the width w and the thickness t of the line conductor 103,
A line having a predetermined characteristic impedance can be realized.
Normally, it is set to 50Ω.

The coplanar waveguide line shown in FIG. 7 has two types: a type without a ground conductor on the back side of the substrate (herein called CPW type) and a type with a ground conductor on the back side of the substrate (herein called CPWG type). The CPW type is a type in which a line conductor 113 is formed on a dielectric substrate 111, and ground conductors 114 are formed on both sides of the line conductor 113 with a predetermined gap g therebetween. In the CPWG type, the line conductor 123 and the ground conductor 124 are formed on the dielectric substrate 121, and the ground conductor 125 is further formed on the lower surface of the dielectric substrate 121. In any case, if the thickness h of the dielectric substrate, the width w of the line conductor, the thickness t of the conductor, and the gap g are determined according to the relative permittivity of the substrate, a predetermined characteristic impedance can be obtained. With the CPW type,
If the thickness h of the dielectric substrate 111 is a certain amount or more, for example, the distance between the two ground conductors or more, the change in the thickness h hardly affects the characteristic impedance.

In the first basic structure of the high frequency package of the present invention, the strip line conductor 13 is used as the line on the high frequency circuit side.
The microstrip line formed by the ground conductor 14 and the outer conductor is a CPW type coplanar waveguide line formed by the coplanar line conductor 15 and the ground conductor 14. Since the microstrip line and the coplanar waveguide line are set to have the same characteristic impedance Z ₀ , the reflection of microwaves and millimeter waves does not occur at this portion. If the thickness of the dielectric substrate 11 is about the same as the width and spacing of the coplanar line conductors, the presence of the wall 12 has almost no effect on the impedance of the coplanar waveguide line, and reflection due to this does not occur. Further, the wall 12 can be sufficiently separated from the microstrip line, and there is no influence of the wall 12.

Further, since the thickness of the dielectric substrate 11 which is generally used in the microwave / millimeter wave circuit is sufficiently smaller than the wavelength of the signal to be transmitted, the electrical length of the through hole 16 portion. That is, the phase shift is short and the reflection is small.
Further, since the through hole 16 is filled with the conductor, the airtightness inside the wall is maintained. Therefore, by using the package as shown in FIG. 1, it is possible to realize a high frequency circuit package capable of hermetically sealing in which the reflection of microwave / millimeter wave signals is extremely small at the package input / output section.

Although the second to fifth basic configurations differ from each other in the following, the basic operation is the same, and a part of the description is omitted.
A second basic configuration of the present invention is a CPWG type in which the coplanar waveguide line of the first basic configuration is formed by the coplanar line conductor 25, the first ground conductor 24, and the second ground conductor 27. Since the wall 22 is provided on the ground conductor 27, the influence on the impedance of the coplanar waveguide line is further reduced. Even in this basic configuration, the characteristic impedances of the microstrip line and the coplanar waveguide line are set to the same, so that reflection of microwave / millimeter wave signals does not occur.

In the third basic configuration of the present invention, a line on the high frequency circuit side is a coplanar waveguide line formed by a coplanar line conductor 33 and a ground conductor 34, and an outward line is formed by a strip line conductor 35 and a ground conductor 34. It is a microstrip line to be formed. Since the characteristic impedances of the coplanar waveguide line and the strip line are the same, reflection of microwave / millimeter wave signals does not occur. Since the wall 32 is above the ground conductor 34, the characteristic impedance of the microstrip line is hardly affected.

In the fourth basic structure of the present invention, the outer line is a microstrip line as in the third basic structure, but the circuit side coplanar waveguide line in the wall 42 is of the CPWG type. Is. In a fifth basic configuration of the present invention, both the circuit side and the outside line are microstrip lines. Since the wall 52 is provided on the second ground conductor 57, it hardly affects the impedance of the second microstrip line formed by the second strip line conductor 55 and the second ground conductor 57.

[0022]

EXAMPLE FIG. 8 shows a high frequency circuit package of the first example. (a) is a top view and (b) is a bottom view. In this high frequency circuit, a microwave / millimeter wave semiconductor element and its matching circuit are formed by a microstrip line inside a package. Actually, a seal plate is also provided on the upper part of the package to seal the rare gas and the like together to protect the circuit part from the external environment.

In FIG. 8A, reference numeral 133 is a line conductor forming a microstrip line, and a through hole filled with a conductor is provided in a portion close to the outer end, and a line conductor 133 is formed through this through hole. ) Is connected to the coplanar line conductor 135. As shown in Fig. 8 (b), the ground conductor is provided on the entire back surface of the package except a part,
The microstrip line conductor 133 and the microstrip line are formed, and the coplanar line conductor 135 and the coplanar waveguide line are formed. Note that reference numeral 138 in FIG. 8A is a power supply terminal, which is also connected to the back surface electrode 139 shown in FIG. 8B via a through hole. All of these through holes are filled with a conductor, and the internal circuit is completely sealed.

Although the wall 132 is made of a dielectric material in this embodiment, it may be a conductor, and if it is a conductor, it may be electrically connected to the ground conductor on the back surface. This will be shown in the second embodiment. FIG. 9 shows the structure of the input / output unit in the first embodiment in more detail. In FIG. 9, 131 is a dielectric substrate, and 132
Is a sealing wall, 136 is a line through hole, and others are the same as in FIG. FIG. 10 shows a cross section at the positions indicated by A, B, C and D in FIG. It is obvious that the microstrip line is formed in the portion A and the coplanar waveguide line is formed in the portion C.

As described above, the characteristic impedance of the microstrip line and the coplanar waveguide line is determined by the shape and the relative permittivity of the dielectric substrate, but an actual shape example is shown. An example of the microstrip line will be described with reference to FIG. The relative permittivity ε _r of the dielectric substrate 101 is 9.7, the thickness h is 200 μm,
The thickness t of the line conductor 103 and the ground conductor 104 is 3 μm, the resistivity ρ is 2.44 × 10 ⁻⁶ Ωcm, and the surface roughness r is 0.
Then, assuming that the loss angle tan δ is 0, it is necessary to set the width of the line conductor 103 to 206.38 μm in order to obtain a characteristic impedance of 50Ω for a signal of a frequency of 50 GHz.

Similarly, an example of a coplanar waveguide line will be described with reference to FIG. Assuming that the relative permittivity ε _r and thickness h of the dielectric substrate 111 are 9.7 and 200 μm as in the above, and the conductor conditions t, ρ, r and tan δ are also 3 μm, 1, 0 and 0. , The characteristic width of 50 Ω at 50 GHz is CPW type and line width w
Is 97.04 μm and the gap g is 40 μm. See you
To 100 μm and g to 41.12 μm. Although not used in the first embodiment, w is 8 if it is a CPWG type.
0.97 μm, g 40 μm or w 10
An external circuit normally connected to 0 μm to set g to 53.30 μm is also set to have a characteristic impedance of 50Ω so that reflection does not occur due to the connection.

Next, the structure of the input / output portion of the high frequency package of the second embodiment is shown in FIG. (a) is a perspective view of an upper surface, (b) is a perspective view of a lower surface, and (c) is an E view in (a).
It is sectional drawing in the position shown by. In the figure, 141 is a dielectric substrate, and 142 is a wall for sealing. 14
A microstrip line conductor 3 forms a microstrip line with the first ground conductor 144. Reference numeral 145 denotes a coplanar line conductor, which forms a coplanar waveguide line with the first ground conductor 144 and the second ground conductor 147. The shape of the line and the like are determined so as to satisfy the condition of the CPWG type having the characteristic impedance of 50Ω. Reference numeral 146 is a through hole. Reference numeral 148 is a through hole for electrically connecting the first ground conductor 144 and the second ground conductor 147, and the inside is filled with a conductor. Instead of the through hole 148, a conductor may be provided on the end of the dielectric substrate by electroplating or the like.

As shown in FIG. 11, the second ground conductor 147 has a portion exposed to the outside of the wall 142. Therefore, when connecting to an external microstrip line, the lead extending from the coplanar line conductor and the second ground conductor 147 may be connected on their respective surfaces, and the connecting work is easy. In the first embodiment, since the lead and the ground conductor are on the same surface, when connecting an external microstrip line,
On the external microstrip line side, it was necessary to provide a connecting electrode connected to the ground conductor with a through hole or the like on the same side as the line conductor, but this is not necessary in the second embodiment shown in FIG. The external circuit to be connected has such a simple structure. Of course, if the line of the external circuit and the ground conductor are the same, it may be connected to the first ground conductor 144 of FIG.

The wall 142 may be a dielectric or a conductor.
If it is a conductor, it is connected to the second ground conductor 147 and grounded. In that case, it is not always necessary to provide an exposed portion on the second ground conductor 147 for connection with an external circuit, and it is also possible to use the side surface of the wall 142 for connection. When the above exposed portion is eliminated, the shape becomes similar to that of FIG. 9, and the wall of the conductor and the back surface are connected by a through hole.

The third embodiment is a high-frequency circuit package in which a microwave / millimeter-wave semiconductor element and its matching circuit are formed by a coplanar waveguide line inside the package, and an overall view thereof is shown in FIG. (a) is a top view,
(b) is a bottom view. In the figure, reference numeral 151 denotes a dielectric substrate, a ground conductor 154 is provided on the upper surface thereof except the circuit portion and the line portion, and a wall 152 is provided on the ground conductor 154. Of course there is a lid on top of the circuit, which is sealed.

Reference numeral 153 denotes a coplanar line conductor, which forms a coplanar waveguide line having a characteristic impedance of 50Ω with the ground conductor 154. A microstrip line conductor 155 is provided on the back surface and forms a microstrip line with the ground conductor 154 on the top surface.
The wall 152 may be a dielectric or a conductor. Further, as described in the second embodiment, the dielectric substrate 151 and the wall 152 may have the same end face.

The structure of the input / output unit of the third embodiment is shown in FIG. (a) is a perspective view of an upper surface, (b) is a perspective view of a lower surface, and (c) and (d) show cross sections at positions F and G in the figure. In the figure, reference numeral 156 is a through hole. This shows that a coplanar waveguide line and a microstrip line are formed in each part.
Of course, each characteristic impedance is set to 50Ω.

The structure of the input / output section of the fourth embodiment is shown in FIG. (a) is a perspective view of an upper surface, (b) is a perspective view of a lower surface, and (c) is a sectional view at a position indicated by H in the drawing.
This embodiment is a high frequency circuit package in which the line inside the wall 162 is a CPWG type coplanar waveguide line. 161 is a dielectric substrate, and 162 is a sealing wall. 163 is a coplanar line conductor. 164
Is a first ground conductor and is provided on the entire surface of the dielectric substrate 161 excluding the circuit portion and the line portion. 165 is a microstrip line conductor. Reference numeral 166 is a through hole for electrically connecting the coplanar line conductor and the microstrip line conductor 165. Reference numeral 167 denotes a second ground conductor provided on the lower surface of the dielectric substrate 161, and the first ground conductor 164 is provided by the through hole 168 for grounding shown in the sectional view of (c).
Is electrically connected to.

The coplanar waveguide conductor 163, the first ground conductor 164, and the second ground conductor 167 form a coplanar waveguide line having a characteristic impedance of 50Ω. The microstrip line conductor 165 and the first ground conductor 164 form a microstrip line having a characteristic impedance of 50Ω. As a result, no signal reflection occurs.

The structure of the input / output section of the fifth embodiment is shown in FIG. (a) is a perspective view of an upper surface, and (b) is a perspective view of a lower surface. In this embodiment, both the inner and outer lines of the wall are microstrip lines. 171 is a dielectric substrate, and 172 is a wall for sealing. Reference numeral 173 denotes a first microstrip line conductor, which forms a first microstrip line having a characteristic impedance of 50Ω with the first ground conductor 174 provided on the lower surface. 175 is a second microstrip line conductor,
A second microstrip line having a characteristic impedance of 50Ω is formed with the second ground conductor 177 provided on the upper surface of 1. Reference numeral 176 is a through hole that electrically connects the first microstrip line conductor 173 and the second microstrip line conductor 175. First ground conductor 17
4 and the second ground conductor 177 are electrically connected by the connection conductor 178 provided on the side surface of the dielectric substrate 171.

A part of the wall 172 is provided on the second ground conductor 177. The wall 172 may be a dielectric or a conductor. As described above, in the high-frequency circuit package of the present invention, the input and output of signals to and from the sealed circuit are performed through the through holes provided in the dielectric substrate. However, by using the through holes, the structure is simple and the microwave The substrate including the millimeter wave circuit and the bonding pad of the semiconductor element and the package input / output unit can be formed on a single substrate, and the manufacturing cost can be reduced. Furthermore, since the phase of the through-hole portion is short, it is possible to make the insertion loss smaller than that using the strip line or the coaxial line shown in FIG.

[0037]

According to the present invention, it is possible to realize a microwave / millimeter-wave high-frequency circuit package having a hermetically sealed structure having a simple structure and good characteristics. As a result, it is possible to realize a system having a small reflection loss even at a high frequency and reduce the manufacturing cost.

[Brief description of drawings]

FIG. 1 is a diagram showing a first basic configuration of a high-frequency circuit package of the present invention.

FIG. 2 is a diagram showing a second basic configuration of the high-frequency circuit package of the present invention.

FIG. 3 is a diagram showing a third basic configuration of the high-frequency circuit package of the present invention.

FIG. 4 is a diagram showing a fourth basic configuration of the high-frequency circuit package of the present invention.

FIG. 5 is a diagram showing a fifth basic configuration of the high-frequency circuit package of the present invention.

FIG. 6 is a diagram showing a microstrip line.

7A and 7B are diagrams showing a coplanar waveguide line, in which FIG. 7A shows a CPW type and FIG. 7B shows a CPWG type.

FIG. 8 is a diagram showing an entire package in the first embodiment.

FIG. 9 is a diagram showing a structure of an input / output unit in the first embodiment.

FIG. 10 is a diagram showing a cross section of each part of the input / output unit in the first embodiment.

FIG. 11 is a diagram showing a structure of an input / output unit of a second embodiment.

FIG. 12 is a diagram showing an entire package of a third embodiment.

FIG. 13 is a diagram showing a structure of an input / output unit in the third embodiment.

FIG. 14 is a diagram showing a structure of an input / output unit of a fourth embodiment.

FIG. 15 is a diagram showing a structure of an input / output unit of a fifth embodiment.

FIG. 16 is a diagram showing a conventional example of a high-frequency circuit package having a line that penetrates a sealing wall as a line to the outside.

FIG. 17 is a diagram showing a conventional example in which a through hole of a substrate is used as a line to the outside and a signal line is provided on the lower surface.

[Explanation of symbols]

 11 ... Dielectric substrate 12 ... Wall 13 ... Microstrip line conductor 14 ... Ground conductor 15 ... Coplanar line conductor 16 ... Through hole

Claims (5)

[Claims] 1. A high frequency circuit package comprising a wall (12) formed on an upper surface of a dielectric substrate (11) for separating a high frequency circuit from the outside, the dielectric substrate (11) being inside the wall (12). A microstrip line conductor (13) provided on the upper surface, a ground conductor (14) provided on the lower surface of the dielectric substrate (11), and a coplanar line conductor provided on the lower surface of the dielectric substrate (11). (15) and a through hole of the dielectric substrate (11) filled with a conductor so as to electrically connect the microstrip line conductor (13) and the coplanar line conductor (15). A hole (16), wherein the microstrip line conductor (13) and the ground conductor (14) form a microstrip line, and the coplanar line conductor (15) and the front High-frequency circuit package ground conductor (14) forms a coplanar waveguide line, the said microstrip line coplanar waveguide line is characterized by having the same characteristic impedance. 2. A high frequency circuit package comprising a wall (22) formed on an upper surface of a dielectric substrate (21) for separating a high frequency circuit from the outside, wherein the dielectric substrate (21) inside the wall (22) is A microstrip line conductor (23) provided on the upper surface, a first ground conductor (24) provided on the lower surface of the dielectric substrate (21), and a coplanar provided on the lower surface of the dielectric substrate (21). A line conductor (25) and a through hole of the dielectric substrate (21) are filled with the conductor so as to electrically connect the microstrip line conductor (23) and the coplanar line conductor (15). Through hole (16) and the wall (2) provided on the upper surface of the dielectric substrate (21).
A part of 2) is provided on the upper surface with a second ground conductor (27), and the microstrip line conductor (23) and the first ground conductor (24) form a microstrip line, and the coplanar line conductor. (25) and the first ground conductor (2
4) and the second ground conductor (27) form a coplanar waveguide line, and the microstrip line and the coplanar waveguide line have the same characteristic impedance. 3. A high frequency circuit package comprising a wall (32) for separating a high frequency circuit formed on the upper surface of a dielectric substrate (31) from the outside, the high frequency circuit package being provided on the upper surface of the dielectric substrate (31) inside the wall. The coplanar line conductor (33), and the wall (3) provided on the upper surface of the dielectric substrate (31).
2) a ground conductor (34) partially provided on the upper surface, a microstrip line conductor (35) provided on the lower surface of the dielectric substrate (31), and a through hole of the dielectric substrate (31). And a through hole (36) filled with a conductor so as to electrically connect the coplanar line conductor (33) and the microstrip line conductor (35), and the coplanar line conductor (33) The ground conductor (3
4) forms a coplanar waveguide line, and the microstrip line conductor (35) and the ground conductor (3
4) forms a microstrip line, and the coplanar waveguide line and the microstrip line have the same characteristic impedance. 4. A high frequency circuit package comprising a wall (42) for separating a high frequency circuit formed on the upper surface of a dielectric substrate (41) from the outside, the high frequency circuit package being provided on the upper surface of the dielectric substrate (41) inside the wall. The coplanar line conductor (43) provided on the dielectric substrate (41) and the wall (4).
Part (2) of the first ground conductor (44) provided on the upper surface
A microstrip line conductor (45) provided on the lower surface of the dielectric substrate (41), a through hole of the dielectric substrate (41), the coplanar line conductor (43) and the microstrip line. A through hole (46) filled with a conductor so as to electrically connect to the conductor (45); and a second ground conductor (47) provided on the lower surface of the dielectric substrate (41), The coplanar line conductor (43), the first ground conductor (44) and the second ground conductor (47) form a coplanar waveguide line, and the microstrip line conductor (45) and the first ground conductor (44). A microstrip line is formed, and the coplanar wave guide line and the microstrip line have the same characteristic impedance. Road package. 5. A high frequency circuit package comprising a wall (52) formed on an upper surface of a dielectric substrate (51) for separating a high frequency circuit from the outside, wherein the dielectric substrate (51) inside the wall (52) is First microstrip line conductor (53) provided on the upper surface
A first ground conductor (54) provided on the lower surface of the dielectric substrate (51); a second microstrip line conductor (55) provided on the lower surface of the dielectric substrate (51); The wall (5) is provided on the upper surface of the body substrate (51).
Second grounding conductor (57) with a part of 2) provided on the upper surface
A through hole in the dielectric substrate (51), the conductor being filled so as to electrically connect the first microstrip line conductor (53) and the second microstrip line conductor (55). A through hole (56), the first microstrip line conductor (53) and the first ground conductor (54), and the second microstrip line conductor (55) and the second ground conductor (57). Is a microstrip line, and both microstrip lines have the same characteristic impedance.