JPH05144721A - Photoresist coating apparatus - Google Patents
Photoresist coating apparatusInfo
- Publication number
- JPH05144721A JPH05144721A JP33146491A JP33146491A JPH05144721A JP H05144721 A JPH05144721 A JP H05144721A JP 33146491 A JP33146491 A JP 33146491A JP 33146491 A JP33146491 A JP 33146491A JP H05144721 A JPH05144721 A JP H05144721A
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- coating
- cup
- atmospheric pressure
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Application Of Or Painting With Fluid Materials (AREA)
- Coating Apparatus (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体基板（以下ウェ
ハと呼ぶ）表面にフォトレジストを塗布するフォトレジ
スト塗布装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoresist coating apparatus for coating a surface of a semiconductor substrate (hereinafter referred to as a wafer) with a photoresist.
【０００２】[0002]
【従来の技術】従来のフォトレジスト塗布装置は図４の
断面図に示すように、塗布カップ内温湿度制御部４０８
と温度制御付フォトレジスト供給部４０６とを有してい
る。2. Description of the Related Art A conventional photoresist coating apparatus, as shown in the sectional view of FIG.
And a photoresist supply unit 406 with temperature control.
【０００３】塗布カップ内温湿度制御部４０８により温
度及び湿度を所望の値の±０．１℃，±０．１％程度に
制御された塗布カップ４０９内に送られたウェハ４０１
は、真空チャック４０２に支持され、温度制御付フォト
レジスト供給部４０６により温度を所望の値の±０．１
℃程度に制御されたフォトレジストをフォトレジスト供
給ノズル４０５を通してモーター４０３により回転され
たウェハ４０１上に滴下することによりフォトレジスト
を塗布していた。４０４はモーター回転制御部、４０７
は温湿度検知部である。The wafer 401 sent into the coating cup 409 whose temperature and humidity are controlled to ± 0.1 ° C. and ± 0.1% of desired values by the temperature / humidity controller 408 inside the coating cup.
Are supported by the vacuum chuck 402, and the temperature is controlled by the photoresist supply unit 406 with temperature control to a desired value ± 0.1.
The photoresist whose temperature is controlled to about 0 ° C. is dropped onto the wafer 401 rotated by the motor 403 through the photoresist supply nozzle 405 to apply the photoresist. 404 is a motor rotation control unit, 407
Is a temperature and humidity detector.
【０００４】従来のフォトレジスト形成装置では、カッ
プ内の気圧が１０ｍｍＨｇ低下すると、フォトレジスト
の膜厚が約５０Åも厚くなってしまった。In the conventional photoresist forming apparatus, when the atmospheric pressure in the cup is lowered by 10 mmHg, the thickness of the photoresist is increased by about 50Å.
【０００５】[0005]
【発明が解決しようとする課題】上述した従来のフォト
レジスト塗布装置は、カップ内温湿度の制御と、フォト
レジストの温度の制御を行っているため、塗布カップ内
の気圧が変化した場合、フォトレジスト膜の膜厚が変化
してしまう欠点があった。Since the conventional photoresist coating apparatus described above controls the temperature and humidity inside the cup and the temperature of the photoresist, when the atmospheric pressure inside the coating cup changes, the There is a drawback that the film thickness of the resist film changes.
【０００６】本発明の目的は、塗布カップ内の気圧の変
化によらず、一定の膜厚のフォトレジスト膜を形成する
フォトレジスト塗布装置を提供することにある。An object of the present invention is to provide a photoresist coating apparatus for forming a photoresist film having a constant film thickness, regardless of changes in atmospheric pressure in the coating cup.
【０００７】[0007]
【課題を解決するための手段】前記目的を達成するた
め、本発明に係るフォトレジスト塗布装置においては、
気圧検知部と、塗布条件制御手段とを有し、塗布カップ
内に半導体基板を回転させて該基板表面にフォトレジス
トを塗布するフォトレジスト塗布装置であって、気圧検
知部は、塗布カップ内の気圧を検知するものであり、塗
布条件制御手段は、気圧検知部の検知信号に基づいて、
半導体基板の回転数又は塗布カップ内湿度を変更して塗
布条件を制御するものである。In order to achieve the above object, in a photoresist coating apparatus according to the present invention,
A photoresist coating apparatus having an atmospheric pressure detection unit and a coating condition control means, which rotates a semiconductor substrate in the coating cup to coat a photoresist on the surface of the substrate, wherein the atmospheric pressure detection unit is provided in the coating cup. For detecting the atmospheric pressure, the coating condition control means, based on the detection signal of the atmospheric pressure detection unit,
The number of revolutions of the semiconductor substrate or the humidity in the coating cup is changed to control the coating conditions.
【０００８】[0008]
【作用】本発明のフォトレジスト塗布装置は塗布カップ
内の気圧を検知し、その気圧により塗布条件を制御する
ものである。The photoresist coating apparatus of the present invention detects the atmospheric pressure in the coating cup and controls the coating conditions by the atmospheric pressure.
【０００９】[0009]
【実施例】次に本発明について図を参照して説明する。The present invention will be described below with reference to the drawings.
【００１０】（実施例１）図１は、本発明の実施例１に
係るフォトレジスト塗布装置を示す断面図である。(Embodiment 1) FIG. 1 is a sectional view showing a photoresist coating apparatus according to Embodiment 1 of the present invention.
【００１１】図１に示すように、塗布カップ内温湿度制
御部１０８により温度及び湿度が一定の値の±０．１
℃，±０．１％程度に制御された塗布カップ１０９内に
送られたウェハ１０１は真空チャック１０２に支持さ
れ、温度制御付フォトレジスト供給部１０６により温度
を一定の値の±０．１℃程度に制御されたフォトレジス
トをフォトレジスト供給ノズル１０５を通してウェハ１
０１上に滴下される。１０７は温湿度検知部であり、カ
ップ１０９内の温湿度を検知する。As shown in FIG. 1, the temperature and humidity inside the coating cup are controlled by the temperature and humidity control section 108 to be a constant value of ± 0.1.
The wafer 101 sent into the coating cup 109 controlled to about ± 0.1% at a temperature of 0.1 ° C. is supported by a vacuum chuck 102, and a photoresist supply unit 106 with temperature control keeps the temperature at a constant value of ± 0.1 ° C. The photoresist controlled to a certain degree is passed through the photoresist supply nozzle 105 to the wafer 1
01 is dripped on. Reference numeral 107 denotes a temperature / humidity detection unit that detects the temperature / humidity inside the cup 109.
【００１２】このとき、ウェハ１０１は、モーター１０
３によりフォトレジストを回転塗布されるが、この回転
数は、カップ１０９内の気圧を気圧検知部１１０により
検知された気圧データからデータ演算部１１１により決
定される。At this time, the wafer 101 is mounted on the motor 10
3, the photoresist is spin-coated, and the number of rotations is determined by the data calculation unit 111 from the atmospheric pressure data detected by the atmospheric pressure detection unit 110 regarding the atmospheric pressure in the cup 109.
【００１３】データ演算部１１１には、あらかじめカッ
プ１０９内気圧とフォトレジスト膜厚の関係［図３
（ａ）に例を示す］とモーター回転数とフォトレジスト
膜厚の関係［図３（ｂ）に例を示す］とを入力し、カッ
プ１０９内気圧に応じたモーター回転数を得るようにな
っている。カップ１０９内気圧が１０ｍｍＨｇ低下した
ときモーター回転制御部１０４によりモーター１０３の
回転数を約１５０ｒｐｍ下げると、一定のフォトレジス
ト膜厚が得られる。The data calculation unit 111 stores in advance the relationship between the internal pressure of the cup 109 and the photoresist film thickness [see FIG.
(A) is given] and the relationship between the motor rotation speed and the photoresist film thickness [shown in FIG. 3 (b)] is input to obtain the motor rotation speed according to the internal pressure of the cup 109. ing. When the internal pressure of the cup 109 is reduced by 10 mmHg, the motor rotation control unit 104 lowers the rotation speed of the motor 103 by about 150 rpm to obtain a constant photoresist film thickness.
【００１４】（実施例２）図２は、本発明の実施例２を
示す断面図である。(Second Embodiment) FIG. 2 is a sectional view showing a second embodiment of the present invention.
【００１５】本実施例では、塗布カップ２０９内の温度
は、気圧検知部２１０により検知された気圧によりデー
タ演算部２１１により決定された値の±０．１％程度
に、塗布カップ２０９内温度は一定の値の±０．１℃程
度に、塗布カップ内温湿度制御部２０８によりそれぞれ
制御されている。In the present embodiment, the temperature inside the coating cup 209 is about ± 0.1% of the value determined by the data calculating unit 211 based on the atmospheric pressure detected by the atmospheric pressure detecting unit 210, and the temperature inside the coating cup 209 is The temperature and humidity inside the coating cup control unit 208 are controlled to a constant value of about ± 0.1 ° C., respectively.
【００１６】塗布カップ２０９内に送られたウェハ２０
１は、真空チャック２０２により支持される。The wafer 20 sent into the coating cup 209.
1 is supported by the vacuum chuck 202.
【００１７】温度制御付フォトレジスト供給部２０６に
より温度を一定の値の±０．２℃程度に制御されたフォ
トレジストをフォトレジスト供給ノズル２０５を通しウ
ェハ２０１上に、モーター回転制御部２０２で制御され
たモーター２０３により回転塗布される。The photoresist whose temperature is controlled to a constant value of about ± 0.2 ° C. by the temperature-controlled photoresist supply unit 206 is passed through the photoresist supply nozzle 205 and is controlled on the wafer 201 by the motor rotation control unit 202. It is applied by rotation by the applied motor 203.
【００１８】このとき、データ演算部２１１には、あら
かじめカップ２０９内気圧とフォトレジスト膜厚の関係
［図３（ａ）に例を示す］とカップ内湿度とフォトレジ
スト膜厚の関係［図３（ｃ）に例を示す］とを入力し、
カップ２０９内気圧に応じたカップ内湿度を得るように
なっている。At this time, the data calculation unit 211 preliminarily stores the relationship between the inner pressure of the cup 209 and the photoresist film thickness [an example is shown in FIG. 3A] and the relationship between the in-cup humidity and the photoresist film thickness [FIG. (An example is shown in (c)].
The humidity inside the cup 209 is obtained according to the internal pressure of the cup 209.
【００１９】カップ内気圧が１０ｍｍＨｇ低下したと
き、カップ内湿度を０．５％下げれば、一定のフォトレ
ジスト膜厚が得られる。When the atmospheric pressure in the cup is lowered by 10 mmHg, the humidity in the cup is lowered by 0.5% to obtain a constant photoresist film thickness.
【００２０】[0020]
【発明の効果】以上説明したように本発明によれば、塗
布カップ内の気圧を検知し、その気圧によりフォトレジ
ストの塗布条件を制御するため、塗布カップ内の気圧の
変動によらず、一定の膜厚のフォトレジスト膜を得るこ
とができる。As described above, according to the present invention, since the atmospheric pressure in the coating cup is detected and the photoresist coating conditions are controlled by the atmospheric pressure, it is constant regardless of the fluctuation of the atmospheric pressure in the coating cup. It is possible to obtain a photoresist film having a film thickness of.
【図１】本発明の実施例１を示す断面図である。FIG. 1 is a cross-sectional view showing a first embodiment of the present invention.
【図２】本発明の実施例２を示す断面図である。FIG. 2 is a sectional view showing a second embodiment of the present invention.
【図３】（ａ）はカップ内気圧とフォトレジスト膜厚の
関係の一例を示す図、（ｂ）はモーター回転数とフォト
レジスト膜厚の関係の一例を示す図、（ｃ）はカップ内
湿度とフォトレジスト膜厚の関係の一例を示す図であ
る。3A is a diagram showing an example of the relationship between the atmospheric pressure in the cup and the photoresist film thickness, FIG. 3B is a diagram showing an example of the relationship between the motor rotation speed and the photoresist film thickness, and FIG. It is a figure which shows an example of the relationship between humidity and a photoresist film thickness.
【図４】従来の装置を示す図である。FIG. 4 is a diagram showing a conventional device.
１０１，２０１，４０１ ウェハ １０２，２０２，４０２ 真空チャック １０３，２０３，４０３ モーター １０４，２０４，４０４ モーター回転制御部 １０５，２０５，４０５ フォトレジスト供給ノズル １０６，２０６，４０６ 温度制御付フォトレジスト供
給部 １０７，２０７，４０７ 温湿度検知部 １０８，２０８，４０８ 塗布カップ内温湿度制御部 １０９，２０９，４０９ 塗布カップ １１０，２１０ 気圧検知部 １１１，２１１ データ演算部101, 201, 401 Wafers 102, 202, 402 Vacuum chucks 103, 203, 403 Motors 104, 204, 404 Motor rotation control units 105, 205, 405 Photoresist supply nozzles 106, 206, 406 Photoresist supply unit with temperature control 107 , 207, 407 Temperature / humidity detection section 108, 208, 408 Coating cup internal temperature / humidity control section 109, 209, 409 Coating cup 110, 210 Atmospheric pressure detection section 111, 211 Data calculation section
Claims (1)
し、塗布カップ内に半導体基板を回転させて該基板表面
にフォトレジストを塗布するフォトレジスト塗布装置で
あって、 気圧検知部は、塗布カップ内の気圧を検知するものであ
り、 塗布条件制御手段は、気圧検知部の検知信号に基づい
て、半導体基板の回転数又は塗布カップ内湿度を変更し
て塗布条件を制御するものであることを特徴とするフォ
トレジスト塗布装置。1. A photoresist coating apparatus having an atmospheric pressure detection unit and a coating condition control means, which rotates a semiconductor substrate in an application cup to apply a photoresist to the surface of the substrate, wherein the atmospheric pressure detection unit is provided. The coating condition control means controls the coating conditions by changing the number of revolutions of the semiconductor substrate or the humidity in the coating cup based on the detection signal of the pressure detection unit. A photoresist coating apparatus characterized in that
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3331464A JP2773500B2 (en) | 1991-11-20 | 1991-11-20 | Photoresist coating equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3331464A JP2773500B2 (en) | 1991-11-20 | 1991-11-20 | Photoresist coating equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05144721A true JPH05144721A (en) | 1993-06-11 |
| JP2773500B2 JP2773500B2 (en) | 1998-07-09 |
Family
ID=18243940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3331464A Expired - Lifetime JP2773500B2 (en) | 1991-11-20 | 1991-11-20 | Photoresist coating equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2773500B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5766671A (en) * | 1995-04-21 | 1998-06-16 | Dainippon Screen Mfg. Co., Ltd. | Method of an apparatus for forming film on substrate by sensing atmospheric pressure |
| US6536964B1 (en) | 1999-09-03 | 2003-03-25 | Tokyo Electron Limited | Substrate processing system and substrate processing method |
| US6599560B1 (en) | 1997-10-30 | 2003-07-29 | Fsi International, Inc. | Liquid coating device with barometric pressure compensation |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63262842A (en) * | 1987-04-21 | 1988-10-31 | Nec Corp | Photoresist coater |
| JPS63294965A (en) * | 1987-05-27 | 1988-12-01 | Toshiba Corp | Rotary coating device |
| JPH02224220A (en) * | 1989-02-25 | 1990-09-06 | Sony Corp | Resist coater |
| JPH02307566A (en) * | 1989-05-22 | 1990-12-20 | Tokyo Electron Ltd | Coating apparatus |
-
1991
- 1991-11-20 JP JP3331464A patent/JP2773500B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63262842A (en) * | 1987-04-21 | 1988-10-31 | Nec Corp | Photoresist coater |
| JPS63294965A (en) * | 1987-05-27 | 1988-12-01 | Toshiba Corp | Rotary coating device |
| JPH02224220A (en) * | 1989-02-25 | 1990-09-06 | Sony Corp | Resist coater |
| JPH02307566A (en) * | 1989-05-22 | 1990-12-20 | Tokyo Electron Ltd | Coating apparatus |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5766671A (en) * | 1995-04-21 | 1998-06-16 | Dainippon Screen Mfg. Co., Ltd. | Method of an apparatus for forming film on substrate by sensing atmospheric pressure |
| US6599560B1 (en) | 1997-10-30 | 2003-07-29 | Fsi International, Inc. | Liquid coating device with barometric pressure compensation |
| US7238239B2 (en) | 1997-10-30 | 2007-07-03 | Fsi International, Inc. | Liquid coating device with barometric pressure compensation |
| US6536964B1 (en) | 1999-09-03 | 2003-03-25 | Tokyo Electron Limited | Substrate processing system and substrate processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2773500B2 (en) | 1998-07-09 |
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