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JPH02307566A - Coating apparatus - Google Patents

Coating apparatus

Info

Publication number
JPH02307566A
JPH02307566A JP1128194A JP12819489A JPH02307566A JP H02307566 A JPH02307566 A JP H02307566A JP 1128194 A JP1128194 A JP 1128194A JP 12819489 A JP12819489 A JP 12819489A JP H02307566 A JPH02307566 A JP H02307566A
Authority
JP
Japan
Prior art keywords
temp
resist
wafer
humidity
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1128194A
Other languages
Japanese (ja)
Other versions
JP2922921B2 (en
Inventor
Haruo Iwazu
春生 岩津
Yasuhiro Sakamoto
泰大 坂本
Yoshio Iwakiri
岩切 純郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Tokyo Electron Kyushu Ltd
Original Assignee
Tokyo Electron Ltd
Tokyo Electron Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Tokyo Electron Kyushu Ltd filed Critical Tokyo Electron Ltd
Priority to JP1128194A priority Critical patent/JP2922921B2/en
Priority to KR1019900007282A priority patent/KR0138097B1/en
Priority to US07/525,681 priority patent/US5127362A/en
Publication of JPH02307566A publication Critical patent/JPH02307566A/en
Application granted granted Critical
Publication of JP2922921B2 publication Critical patent/JP2922921B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Spray Control Apparatus (AREA)
  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

PURPOSE:To permit coating to be applied in an outstandingly uniform film by controlling the temp. of a coating liq. according to at least either of temp. or humidity conditions in an environment of the coating operation by a rotary coater. CONSTITUTION:A resist 6 is dropped in a predetermined amt. from a nozzle 3 onto a wafer supported on a chuck 2 and rotatable at a high speed. At this time, the resist film thickness is small around the wafer and larger in its central part at a low environmental temp. and, at a higher environmental temp., it is small in the central part and larger around the wafer. Also, the resist film thickness is large at a low environmental humidity, and smaller at a higher environmental humidity. According to the relationship between the resist viscosity (temp.) and at least either of temp. or humidity conditions in a cap 11 previously fed by signals from CUP generated by outputs from a temp. sensor 12 and a humidity sensor 13, a temp. adjusting controller 14 energizes or deenergizes a heater 15 to increase or decrease the resist temp. to attain the optimum temp and thereby adjust an uneven resist film thickness produced in the central and peripheral parts of the wafer so as to make the resist film uniform in thickness.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は塗布装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a coating device.

[従来の技術及び発明が解決すべき課題]塗布装置には
次のようなものがある。
[Prior art and problems to be solved by the invention] The following coating devices are available.

半導体集積回路製造のウェハ処理工程の中で薄膜の所望
のパターンを得るため、ウェハ上に形成された薄膜上に
所望のパターンに作成した金属薄膜等でマスクを作成し
、その上に感光性のレジストを塗布した後露光し現像を
行っている。このレジストを塗布する塗布工程は高品質
な半導体を形成するために均一な塗布膜を形成すること
が必要条件である。そのため、一定量のレジスト液を供
給する機構によりウェハ上に設置されたノズルよりレジ
ストを滴下させ、ウェハを吸着等で固定したチャックを
チャックを包囲するカップ内で高速回転させて塗布を行
うスピンコータがある。
In order to obtain a desired pattern on a thin film during the wafer processing process for manufacturing semiconductor integrated circuits, a mask is created using a metal thin film or the like in the desired pattern on the thin film formed on the wafer, and a photosensitive film is applied on top of the mask. After applying resist, it is exposed and developed. In the coating process of applying this resist, it is necessary to form a uniform coating film in order to form a high quality semiconductor. Therefore, a spin coater uses a mechanism that supplies a certain amount of resist solution to drop resist from a nozzle installed on the wafer, and then applies the coating by rotating a chuck that holds the wafer in place by suction at high speed in a cup that surrounds the chuck. be.

ここでレジスト塗布膜の膜厚は、レジスト液の粘度及び
温度、ウェハの温度、あるいはウェハの回転数1周囲の
温度・湿度等の環境により相互に影響を受けるものであ
ることが判明してきた。そのため、現況はこれらの各パ
ラメータをウェハチャックを包囲するカップ内の条理条
件を一定条件にコントロールして膜厚の精度を確保して
いる。
It has been found that the thickness of the resist coating film is mutually influenced by the viscosity and temperature of the resist solution, the temperature of the wafer, and the surrounding environment such as temperature and humidity per revolution of the wafer. Therefore, the current state of the art is to control each of these parameters so that the conditions in the cup surrounding the wafer chuck are constant to ensure the accuracy of the film thickness.

しかし、一定条件にコントロールするための温度・湿度
調整設備はコストが高くなり、又、各パラメータは相互
に関連性があり、最適条件設定が困難であった。
However, the cost of temperature/humidity adjustment equipment for controlling constant conditions is high, and each parameter is interrelated, making it difficult to set optimal conditions.

本発明は以上のような欠点を解消するためになされたも
ので、非常に均一な膜を塗布できる塗布装置を提供する
ことを目的とする。
The present invention was made in order to eliminate the above-mentioned drawbacks, and an object of the present invention is to provide a coating device that can coat a very uniform film.

[課題を解決するための手段] 上記の目的を達成するため本発明のレジスト塗布装置は
、回転塗布する装置において、回転塗布雰囲気の温度及
び湿度の少なくとも一方の条件により塗布液の温度を制
御する6 [作用] 本発明の塗布装置は、回転塗布中のi境温度、湿度に応
じて塗布液の温度例えばノズルから供給されるノズルの
温度を制御することにより膜厚を均一化するものである
。環境温度が高いと塗布膜たとえばレジスト膜厚はたと
えばウェハ周辺部で厚く、中央部で薄くなり、環境温度
が低い場合レジストは逆に延伸され難く、中央部が厚く
周辺部が薄くなる。
[Means for Solving the Problems] In order to achieve the above object, the resist coating apparatus of the present invention is a spin coating apparatus that controls the temperature of the coating liquid by at least one of the temperature and humidity of the spin coating atmosphere. 6 [Function] The coating device of the present invention makes the film thickness uniform by controlling the temperature of the coating liquid, such as the temperature of the nozzle supplied from the nozzle, according to the ambient temperature and humidity during spin coating. . If the environmental temperature is high, the coating film, such as a resist film, will be thick at the periphery of the wafer and thin at the center, and if the environmental temperature is low, the resist will be difficult to stretch and will be thick at the center and thin at the periphery.

また、環境湿度がレジストやウェハ温度に対して最適湿
度であれば、最適な膜厚のものが作られる。しかし、湿
度が高いと膜厚が薄く、湿度が低いと膜厚が厚くなる。
Furthermore, if the environmental humidity is optimal relative to the resist and wafer temperatures, a film with an optimal thickness can be produced. However, when the humidity is high, the film thickness becomes thin, and when the humidity is low, the film thickness becomes thick.

[実施例コ 本発明の塗布装置をレジスト塗布装置に適用した一実施
例を図面を参照して説明する。
[Embodiment] An embodiment in which the coating apparatus of the present invention is applied to a resist coating apparatus will be described with reference to the drawings.

第1図に図示のレジスト塗布装置は、真空吸着等によっ
てウェハWを載置固定し、モータ(回転駆動機構)1の
回転軸に固定される上面円板状チャック2の円板中心部
の上方に吐出ノズル(ノズル)3が設けられる。吐出ノ
ズル3はロットの切れ目等で吐出ノズル3からのディス
ペンスが所定時間実行されない場合、吐出ノズル3先端
でレジスト液が長時間空気と接触されることにより固ま
ってしまうことがあるのでダミーディスペンスを実行す
る必要があり、吐出ノズル3をチャック2上方から外側
位置に退避させるため、スキャナー4により移動自在と
なっている。この吐出ノズル3が接続されるレジストの
供給装置であるレジスト供給系5はレジスト収納容器6
に収納されたレジスト7を所望の一定量供給するポンプ
8例えばベローズポンプ等、フィルタ容器9及びポンプ
8を連動して開閉されるバルブv1、レジスト6を吐出
ノズル3から吐出後レジストを吐出ノズル3内に引き戻
し、レジストの液だれあるいは同化を防止するためのサ
ックバックバルブ10から構成される。
The resist coating device shown in FIG. 1 mounts and fixes a wafer W by vacuum suction or the like, and places the wafer W above the center of the disc of an upper disc-shaped chuck 2 fixed to the rotation shaft of a motor (rotary drive mechanism) 1. A discharge nozzle (nozzle) 3 is provided. If dispensing from the dispensing nozzle 3 is not performed for a predetermined period of time due to a break in the lot, etc., the resist liquid at the tip of the dispensing nozzle 3 may harden due to contact with air for a long period of time, so perform dummy dispensing. In order to retract the discharge nozzle 3 from above the chuck 2 to an outer position, it is movable by the scanner 4. A resist supply system 5, which is a resist supply device to which this discharge nozzle 3 is connected, includes a resist storage container 6.
A pump 8, such as a bellows pump, which supplies a desired constant amount of the resist 7 stored in the filter container 9 and the pump 8, a valve v1 that is opened and closed in conjunction with the filter container 9 and the pump 8, and a valve v1 that discharges the resist 6 from the discharge nozzle 3, and then discharges the resist from the discharge nozzle 3. It is comprised of a suckback valve 10 for pulling the resist back in and preventing dripping or assimilation of the resist.

また、レジスト塗布時にレジストが装置外部へ飛散する
のを防止するため処理容器としてカップ11がチャック
2を包囲して設けられる。カップ11は上下動可能であ
ってウェハWの搬占入時には図示の位置より下降しチャ
ック8が露出して搬入比を容易にする。さらにカップ1
1にはカップll内の環境を測定する温度センサ12及
び湿度センサ13が設けられ、カップ11の下部にはド
レイン管、排気管等(図示せず)が接続される。
Further, a cup 11 is provided surrounding the chuck 2 as a processing container to prevent the resist from scattering outside the apparatus during resist application. The cup 11 is movable up and down, and when the wafer W is loaded, it is lowered from the position shown in the figure to expose the chuck 8 and facilitate the loading ratio. 1 more cup
1 is provided with a temperature sensor 12 and a humidity sensor 13 for measuring the environment inside the cup 11, and a drain pipe, an exhaust pipe, etc. (not shown) are connected to the lower part of the cup 11.

さらに、本発明のレジスト塗布装置には、吐出ノズル3
に温度調整手段であるヒータ15が設けられる。CPU
に入力される温度センサ12及び湿度センサ13からの
入力信号によりCPUから発信される信号に従ってヒー
タ15を動作させ塗布液の温度を制御する温度調整コン
トローラ14が信えられる。温度調整手段はヒータに限
らず吐出ノズル3を二重管にし、レジスト通過路の周囲
に温度調整水の循環流路を設けたものであってもよい。
Furthermore, the resist coating apparatus of the present invention includes a discharge nozzle 3.
A heater 15 serving as a temperature adjustment means is provided. CPU
It is believed that the temperature adjustment controller 14 controls the temperature of the coating liquid by operating the heater 15 in accordance with signals sent from the CPU based on input signals from the temperature sensor 12 and humidity sensor 13. The temperature adjustment means is not limited to a heater, but may be one in which the discharge nozzle 3 is made into a double pipe and a temperature adjustment water circulation path is provided around the resist passage path.

温度調整手段(ヒータ15)の加熱によリレシスト温度
をtA整することによりレジスト粘度が変えられる。
The resist viscosity can be changed by adjusting the resist temperature to tA by heating the temperature adjusting means (heater 15).

以上のような構成のレジスト塗布装置を用いて均一な厚
さを有するレジスト膜の形成方法を説明する。
A method for forming a resist film having a uniform thickness using the resist coating apparatus configured as described above will be described.

ウェハWが図示しない搬送機構によりチャック2上に吸
着されて支持されるとカップ11は第1図に図示のよう
に上昇し、モータlの回転に伴いチャック2に吸着され
たウェハWは予め定められた期間例えば1000回転/
secで塗布し、その後さらに例えば4000回転/s
eeで所定期間回転する。
When the wafer W is attracted and supported on the chuck 2 by a transport mechanism (not shown), the cup 11 rises as shown in FIG. For example, 1000 rotations/
sec, and then further, for example, 4000 rotations/s.
Rotate for a predetermined period with ee.

このような高速回転するウェハW上にレジスト供給系5
より配管を通ってレジスト6が吐出ノズル3より一定量
滴下される。滴下されたレジスト6は、この時のカップ
11内の温度がレジスト膜形成の最適温度より低い場合
は第2図の断面図に示すようにウェハWの中央部18の
膜厚が厚いレジスト膜17が形成されるが、温度センサ
12の出力によりCPUからの信号で予め入力されてい
るカップ11内温度と湿度の少なくとも一条件としシス
ト粘度(温度)の関係より温度調整コントローラ14が
ヒータISを動作させレジスト温度を上昇させて、中央
部が薄く周辺部が厚い膜厚を形成するよう調整すること
により中央部と周辺部に生じる膜厚の不均一性を相殺し
、第4図に示すような均一な膜厚のレジスト膜17を得
ることができる。また、カップ内11内の温度がレジス
ト膜形成の最適温度より高い場合は第3図に示すように
ウェハWの周辺部19の膜厚が厚いレジスト膜17が形
成されるが、同様に温度調整コントローラ14により、
ヒータ15を停止させレジスト温度を低下させ、中央部
の厚い周辺部の薄い膜厚を形成するようにして不均一性
の相殺により第4図のような均一な膜厚のレジスト膜1
7を得る。また、湿度においても同様であって、最適湿
度は例えば35%であって、湿度が高くなるに伴い形成
されるレジスト膜は厚くなり、1%異ることにより数1
0A厚の変化を生じる。カップ11内の湿度も30〜4
0%位を変化するものであってこの変化を湿度センサ1
3が検知すると、予め入力されているカップ11内湿度
とレジスト粘度の関係を比較して温度調整コントローラ
14がヒータ15を作動させ、均一な膜厚のレジスト膜
を形成する。
The resist supply system 5 is placed on the wafer W rotating at such a high speed.
A certain amount of resist 6 is dropped from the discharge nozzle 3 through the pipe. If the temperature inside the cup 11 at this time is lower than the optimum temperature for resist film formation, the dropped resist 6 will form a resist film 17 with a thicker film thickness at the center portion 18 of the wafer W, as shown in the cross-sectional view of FIG. is formed, but the temperature adjustment controller 14 operates the heater IS based on the relationship between the cyst viscosity (temperature) and at least one condition of the internal temperature and humidity of the cup 11, which are inputted in advance by a signal from the CPU based on the output of the temperature sensor 12. By increasing the resist temperature and adjusting the film thickness so that it is thinner in the center and thicker in the periphery, the non-uniformity of the film thickness that occurs between the center and the periphery can be offset, resulting in a film as shown in Figure 4. A resist film 17 having a uniform thickness can be obtained. Furthermore, if the temperature inside the cup 11 is higher than the optimum temperature for resist film formation, a resist film 17 with a thicker film thickness on the peripheral part 19 of the wafer W is formed as shown in FIG. By the controller 14,
The heater 15 is stopped, the resist temperature is lowered, and the resist film 1 is thicker in the center and thinner in the periphery, thereby canceling out the non-uniformity, resulting in a resist film 1 with a uniform thickness as shown in FIG.
Get 7. The same applies to humidity; the optimum humidity is, for example, 35%, and as the humidity increases, the resist film that is formed becomes thicker.
A change in 0A thickness occurs. The humidity inside cup 11 is also 30-4
Humidity sensor 1 changes around 0% and detects this change.
3 is detected, the temperature adjustment controller 14 operates the heater 15 by comparing the relationship between the humidity inside the cup 11 and the resist viscosity input in advance, and forms a resist film with a uniform thickness.

上記実施例ではレジスト塗布装置に応用した例について
説明したが、塗布であれば現像液や磁性塗料のフロッピ
ーデスクへの塗布、磁気テープの製造など回転塗布であ
れば何れにも適用できる。
In the above embodiment, an example in which the present invention is applied to a resist coating apparatus has been described, but the present invention can be applied to any rotary coating, such as coating a developer or magnetic paint to a floppy disk, or manufacturing a magnetic tape.

[発明の効果] 以上の説明からも明らかなように、本発明の塗布装置に
よれば、塗布液の温度を制御することにより均一塗布を
行うことができる。
[Effects of the Invention] As is clear from the above description, according to the coating apparatus of the present invention, uniform coating can be performed by controlling the temperature of the coating liquid.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の塗布装置の一実施例を示す概略構成図
、第2図ないし第4図はそれぞれ第1図のレジスト塗布
装置の説明図である。 14・・・・温度調整コントローラ (温度を制御する手段)
FIG. 1 is a schematic diagram showing an embodiment of the coating apparatus of the present invention, and FIGS. 2 to 4 are explanatory views of the resist coating apparatus shown in FIG. 1, respectively. 14...Temperature adjustment controller (means to control temperature)

Claims (1)

【特許請求の範囲】[Claims] 回転塗布する装置において、回転塗布雰囲気の温度及び
湿度の少なくとも一方の条件により塗布液の温度を制御
する手段を設けたことを特徴とする塗布装置。
A coating apparatus for spin coating, characterized in that the coating apparatus is provided with means for controlling the temperature of a coating liquid according to at least one of the temperature and humidity conditions of a spin coating atmosphere.
JP1128194A 1989-05-22 1989-05-22 Coating device and coating method Expired - Fee Related JP2922921B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP1128194A JP2922921B2 (en) 1989-05-22 1989-05-22 Coating device and coating method
KR1019900007282A KR0138097B1 (en) 1989-05-22 1990-05-21 Liquid coating device
US07/525,681 US5127362A (en) 1989-05-22 1990-05-21 Liquid coating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1128194A JP2922921B2 (en) 1989-05-22 1989-05-22 Coating device and coating method

Publications (2)

Publication Number Publication Date
JPH02307566A true JPH02307566A (en) 1990-12-20
JP2922921B2 JP2922921B2 (en) 1999-07-26

Family

ID=14978782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1128194A Expired - Fee Related JP2922921B2 (en) 1989-05-22 1989-05-22 Coating device and coating method

Country Status (1)

Country Link
JP (1) JP2922921B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05144721A (en) * 1991-11-20 1993-06-11 Nec Corp Photoresist coating apparatus
JP2019042629A (en) * 2017-08-30 2019-03-22 タクボエンジニアリング株式会社 Coating apparatus and coating method using the apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61137322A (en) * 1984-12-10 1986-06-25 Hitachi Ltd Coating apparatus
JPS6246519A (en) * 1985-08-26 1987-02-28 Toshiba Corp Rotary coating device
JPS63250820A (en) * 1987-04-08 1988-10-18 Mitsubishi Electric Corp Coating device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61137322A (en) * 1984-12-10 1986-06-25 Hitachi Ltd Coating apparatus
JPS6246519A (en) * 1985-08-26 1987-02-28 Toshiba Corp Rotary coating device
JPS63250820A (en) * 1987-04-08 1988-10-18 Mitsubishi Electric Corp Coating device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05144721A (en) * 1991-11-20 1993-06-11 Nec Corp Photoresist coating apparatus
JP2019042629A (en) * 2017-08-30 2019-03-22 タクボエンジニアリング株式会社 Coating apparatus and coating method using the apparatus

Also Published As

Publication number Publication date
JP2922921B2 (en) 1999-07-26

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