JPH05102115A - Cleaning method for semiconductor substrate - Google Patents
Cleaning method for semiconductor substrateInfo
- Publication number
- JPH05102115A JPH05102115A JP25935391A JP25935391A JPH05102115A JP H05102115 A JPH05102115 A JP H05102115A JP 25935391 A JP25935391 A JP 25935391A JP 25935391 A JP25935391 A JP 25935391A JP H05102115 A JPH05102115 A JP H05102115A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- semiconductor substrate
- oxide film
- metal impurities
- remove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 53
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000004140 cleaning Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 title claims description 9
- 239000012535 impurity Substances 0.000 claims abstract description 33
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000004094 surface-active agent Substances 0.000 claims abstract description 9
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052753 mercury Inorganic materials 0.000 abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 229960002050 hydrofluoric acid Drugs 0.000 abstract 2
- 239000002253 acid Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 6
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 4
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- -1 and for example Chemical compound 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体基板の洗浄方法
に関する。ことに、半導体集積回路製造工程に用いられ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor substrate cleaning method. Particularly, it is used in the semiconductor integrated circuit manufacturing process.
【０００２】[0002]
【従来の技術】従来の半導体基板の洗浄方法は、半導体
基板に付着した金属不純物が薬品及び純水による洗浄で
は除去しにくいため、半導体基板を熱酸化して酸化膜中
に金属不純物を取り込み、酸化膜をバッファフッ酸又は
希フッ酸で除去して、基板表面の金属不純物を除去する
方法がある。2. Description of the Related Art In the conventional method for cleaning a semiconductor substrate, since the metal impurities attached to the semiconductor substrate are difficult to remove by cleaning with chemicals and pure water, the semiconductor substrate is thermally oxidized to incorporate the metal impurities into the oxide film. There is a method in which the oxide film is removed with buffer hydrofluoric acid or dilute hydrofluoric acid to remove metal impurities on the substrate surface.
【０００３】[0003]
【発明が解決しようとする課題】図２に示すように、半
導体装置11を熱酸化して熱酸化膜13中に金属不純物12を
取り込む従来の方法では、熱酸化が通常900 ℃以上の高
温で行われるため、半導体基板11の内部にも表面の金属
不純物12が拡散して、基板内部を汚染してしまう問題が
ある。さらに金属不純物を取り込んだ酸化膜をバッファ
フッ酸又は希フッ酸で除去する際に、酸化膜中からとけ
出した金属不純物が液中で基板表面に再付着するという
問題がある。As shown in FIG. 2, in the conventional method in which the semiconductor device 11 is thermally oxidized to take in the metal impurities 12 in the thermal oxide film 13, thermal oxidation is usually performed at a high temperature of 900 ° C. or higher. Therefore, there is a problem that the metal impurities 12 on the surface diffuse into the inside of the semiconductor substrate 11 and contaminate the inside of the substrate. Further, when the oxide film containing the metal impurities is removed by buffer hydrofluoric acid or dilute hydrofluoric acid, there is a problem that the metal impurities ejected from the oxide film are reattached to the substrate surface in the liquid.
【０００４】この発明は、上記問題を解決するためにな
されたものであって、基板内部に金属不純物を拡散させ
ることなく基板表面の金属不純物を含む酸化膜を形成で
き、表面の酸化膜と共に金属不純物を除去することので
きる半導体基板の洗浄方法を提供しようとするものであ
る。The present invention has been made in order to solve the above problems, and an oxide film containing metal impurities on the surface of a substrate can be formed without diffusing the metal impurities inside the substrate. An object of the present invention is to provide a method for cleaning a semiconductor substrate that can remove impurities.
【０００５】[0005]
【課題を解決するための手段】この発明によれば、オゾ
ン雰囲気中で金属不純物の付着した半導体基板表面に紫
外光を照射して金属不純物を含む酸化膜を形成し、この
後界面活性剤を添加したバッファフッ酸又は希フッ酸溶
液で処理することによって酸化膜と共に金属不純物を除
去することを特徴とする半導体基板の洗浄方法が提供さ
れる。According to the present invention, the surface of a semiconductor substrate on which metal impurities are attached is irradiated with ultraviolet light in an ozone atmosphere to form an oxide film containing metal impurities, and then a surfactant is added. A method for cleaning a semiconductor substrate is provided, which comprises removing the metal impurities together with the oxide film by treating with the added buffer hydrofluoric acid or dilute hydrofluoric acid solution.
【０００６】この発明においては、オゾン雰囲気中で金
属不純物の付着した半導体基板表面に紫外光を照射して
金属不純物を含む酸化膜を形成する。オゾン雰囲気は、
例えば吸排気の制御可能なチャンバー内に所定圧力のオ
ゾンガス又は所定分圧のオゾンガスと他のガスとの混合
ガスを導入して形成することができる。In the present invention, the surface of the semiconductor substrate having metal impurities attached thereto is irradiated with ultraviolet light in an ozone atmosphere to form an oxide film containing metal impurities. The ozone atmosphere is
For example, it can be formed by introducing ozone gas having a predetermined pressure or a mixed gas of ozone gas having a predetermined partial pressure and another gas into a chamber capable of controlling intake and exhaust.
【０００７】この温度は、通常３０〜１００℃である。
オゾンガスの圧力又は分圧は、通常１〜２kg／cm2 であ
る。他のガスは、例えば窒素ガス、空気等が用いられ
る。半導体基板は、例えばＳｉ、ＧａＡｓ、ＩｎＰ等で
構成されたものを用いることができる。This temperature is usually 30 to 100 ° C.
The pressure or partial pressure of ozone gas is usually 1 to 2 kg / cm 2 . As the other gas, for example, nitrogen gas, air or the like is used. The semiconductor substrate may be made of, for example, Si, GaAs, InP or the like.
【０００８】この半導体基板は、表面に付着した金属不
純物が除去された半導体基板を作製するためのものであ
って、表面に金属不純物が付着した未洗浄の半導体基板
が用いられる。また、この半導体基板は、通常５０〜１
５０℃、好ましくは100 ℃前後の温度で上記チャンバー
内に配置される。半導体基板は、温度が１５０℃より高
い場合は半導体基板表面の金属不純物が半導体基板内に
拡散するので好ましくない。温度が５０℃未満では、紫
外線照射によっても半導体基板表面に所定の酸化膜が形
成されないので好ましくない。紫外光は、半導体基板表
面の雰囲気のオゾンを活性化するためのものであって、
活性化したオゾンを介して半導体基板表面領域を酸化し
て酸化膜を形成することができる。This semiconductor substrate is for producing a semiconductor substrate from which metal impurities attached to the surface are removed, and an uncleaned semiconductor substrate having metal impurities attached to the surface is used. Moreover, this semiconductor substrate is usually 50 to 1
It is placed in the chamber at a temperature of around 50 ° C, preferably around 100 ° C. When the temperature of the semiconductor substrate is higher than 150 ° C., metal impurities on the surface of the semiconductor substrate diffuse into the semiconductor substrate, which is not preferable. If the temperature is lower than 50 ° C., a predetermined oxide film will not be formed on the surface of the semiconductor substrate even when irradiated with ultraviolet rays, which is not preferable. The ultraviolet light is for activating ozone in the atmosphere on the surface of the semiconductor substrate,
The oxide film can be formed by oxidizing the surface region of the semiconductor substrate through the activated ozone.
【０００９】この紫外光は、２５３７Å、１８４９Å等
の波長が好ましい。酸化膜は、金属不純物が付着してい
る半導体基板表面領域を金属不純物と共に除去するため
のものであって、通常５０〜１００Åの厚さの半導体基
板表面領域が酸化され形成される。この発明において
は、この後、界面活性剤を添加したバッファフッ酸又は
希フッ酸溶液で半導体基板を処理する。The ultraviolet light preferably has a wavelength of 2537Å, 1849Å, or the like. The oxide film is for removing the semiconductor substrate surface region to which the metal impurities are attached together with the metal impurities, and is usually formed by oxidizing the semiconductor substrate surface region having a thickness of 50 to 100Å. In the present invention, thereafter, the semiconductor substrate is treated with a buffer hydrofluoric acid or a dilute hydrofluoric acid solution to which a surfactant is added.
【００１０】界面活性剤は、フッ酸と反応しないものな
らばよく、例えばプロピルアミン、ブチルアミン等を用
いることができる。この処理によって、酸化膜を溶解し
酸化膜と共に酸化膜上の金属不純物を除去することがで
きる。この後、水洗して表面に金属不純物の除去された
半導体基板を得ることができる。The surfactant may be any one that does not react with hydrofluoric acid, and for example, propylamine, butylamine, etc. can be used. By this treatment, the oxide film can be dissolved and the metal impurities on the oxide film can be removed together with the oxide film. Then, it is washed with water to obtain a semiconductor substrate from which metal impurities are removed.
【００１１】[0011]
【作用】オゾン雰囲気中で紫外光を半導体基板に照射す
ることで100 ℃前後の低温で酸化膜の形成が可能であ
り、金属不純物を基板内部に拡散させることなく、酸化
膜中に取り込むことが可能になる。さらに酸化膜除去を
界面活性剤を添加したバッファフッ酸又は希フッ酸で行
えば、界面活性剤が基板表面の保護膜として働き、基板
表面への金属不純物の再付着を防ぐことができる。[Function] By irradiating a semiconductor substrate with ultraviolet light in an ozone atmosphere, an oxide film can be formed at a low temperature of about 100 ° C., and metal impurities can be incorporated into the oxide film without diffusing into the substrate. It will be possible. Further, if the oxide film is removed with buffer hydrofluoric acid or dilute hydrofluoric acid to which a surfactant is added, the surfactant acts as a protective film on the surface of the substrate, and the redeposition of metal impurities on the substrate surface can be prevented.
【００１２】[0012]
【実施例】図１(a) に示すように、吸気口３、排気口
４、低圧水銀ランプ５及び基板載置台８を有するチャン
バー２に１枚のシリコン基板１を載置し100 ℃に加熱
し、100 ℃で７６０Ｔｏｒｒの圧力のオゾン雰囲気中で
低圧水銀ランプ５を用いて波長、2537Å及び1849Åの紫
外光６を照射してシリコン基板１に酸化膜を形成する。
オゾン流量0.5 ｇ／min 、低圧水銀ランプ照射１時間で
膜厚が約50Åの酸化膜が形成される。この後、図１(b)
に示すようにシリコン基板１を、界面活性剤（プロピル
アミン）を500 ｐｐｍ添加した５％希フッ酸溶液７に１
分浸漬し酸化膜を除去した後、純水水洗、乾燥を行う。EXAMPLE As shown in FIG. 1 (a), one silicon substrate 1 is placed in a chamber 2 having an intake port 3, an exhaust port 4, a low pressure mercury lamp 5 and a substrate mounting table 8 and heated to 100 ° C. Then, an ultraviolet light 6 having wavelengths of 2537Å and 1849Å is irradiated by using a low pressure mercury lamp 5 in an ozone atmosphere of 100 ° C. and a pressure of 760 Torr to form an oxide film on the silicon substrate 1.
An oxide film with a film thickness of about 50Å is formed in 1 hour of irradiation with a low pressure mercury lamp at an ozone flow rate of 0.5 g / min. After this, Fig. 1 (b)
As shown in Figure 1, the silicon substrate 1 was placed in a 5% dilute hydrofluoric acid solution 7 containing 500 ppm of a surfactant (propylamine).
After dipping for minutes to remove the oxide film, washing with pure water and drying are performed.
【００１３】[0013]
【発明の効果】本発明の半導体基板洗浄方法により、基
板内部に金属不純物を拡散させることなく、基板表面の
金属不純物除去が可能になる。According to the semiconductor substrate cleaning method of the present invention, it is possible to remove the metal impurities on the surface of the substrate without diffusing the metal impurities inside the substrate.
【図１】この発明の実施例で行ったシリコン基板の洗浄
方法の説明図である。FIG. 1 is an explanatory diagram of a silicon substrate cleaning method performed in an embodiment of the present invention.
【図２】従来の半導体基板の洗浄方法の説明図である。FIG. 2 is an explanatory diagram of a conventional semiconductor substrate cleaning method.
１ シリコン基板 ２ チャンバー ３ 吸気口 ４ 排気口 ５ 低圧水銀ランプ ６ 紫外光 1 Silicon substrate 2 Chamber 3 Inlet port 4 Exhaust port 5 Low pressure mercury lamp 6 Ultraviolet light
Claims (1)
半導体基板表面に紫外光を照射して金属不純物を含む酸
化膜を形成し、この後界面活性剤を添加したバッファフ
ッ酸又は希フッ酸溶液で処理することによって酸化膜と
共に金属不純物を除去することを特徴とする半導体基板
の洗浄方法。1. A buffer hydrofluoric acid or dilute hydrofluoric acid solution to which a surfactant is added after forming an oxide film containing metal impurities by irradiating the surface of a semiconductor substrate to which metal impurities are adhered with ultraviolet light in an ozone atmosphere. A method for cleaning a semiconductor substrate, characterized in that the metal impurities are removed together with the oxide film by treating the semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25935391A JPH05102115A (en) | 1991-10-07 | 1991-10-07 | Cleaning method for semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25935391A JPH05102115A (en) | 1991-10-07 | 1991-10-07 | Cleaning method for semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05102115A true JPH05102115A (en) | 1993-04-23 |
Family
ID=17332934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25935391A Pending JPH05102115A (en) | 1991-10-07 | 1991-10-07 | Cleaning method for semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05102115A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996021242A1 (en) * | 1995-01-06 | 1996-07-11 | Tadahiro Ohmi | Cleaning method |
-
1991
- 1991-10-07 JP JP25935391A patent/JPH05102115A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996021242A1 (en) * | 1995-01-06 | 1996-07-11 | Tadahiro Ohmi | Cleaning method |
| US5954885A (en) * | 1995-01-06 | 1999-09-21 | Ohmi; Tadahiro | Cleaning method |
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