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JPH0495205A - Magnetoresistive head - Google Patents

Magnetoresistive head

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Publication number
JPH0495205A
JPH0495205A JP21126390A JP21126390A JPH0495205A JP H0495205 A JPH0495205 A JP H0495205A JP 21126390 A JP21126390 A JP 21126390A JP 21126390 A JP21126390 A JP 21126390A JP H0495205 A JPH0495205 A JP H0495205A
Authority
JP
Japan
Prior art keywords
film
magnetic
magnetic film
head
laminated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21126390A
Other languages
Japanese (ja)
Inventor
Hitoshi Kanai
均 金井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP21126390A priority Critical patent/JPH0495205A/en
Publication of JPH0495205A publication Critical patent/JPH0495205A/en
Pending legal-status Critical Current

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  • Magnetic Heads (AREA)

Abstract

PURPOSE:To prevent the corrosion of a magnetic film and to obtain the MR head having high reliability by adding Nb to the magnetic film of the magneto- resistance effect type head. CONSTITUTION:The Nb is added to the magnetic film 12 of the magneto- resistance effect type head which detects a change in magnetic field by a change in the resistance value of a magneto-resistance effect element 1 laminated with the magnetic film 12. Namely, the Nb having a corrosion presventive effect is added and the magnetic film 12 is constituted like an FeMnNb film, TbCoNb film, etc. The ratio occupied by the Nb is generally several per cents of the mass of the magnetic film and the content thereof is determined by taking the intensity of an exchange bond magnetic field, etc., into consideration. The corrosion of the magnetic film 12 to be laminated on the MR element 11 is prevented in this way.

Description

【発明の詳細な説明】 〔概要〕 磁気抵抗効果型ヘッドに関し、 磁性膜の腐食を防止することを目的とし、磁性膜を積層
した磁気抵抗効果素子の抵抗値の変化により磁界の変化
を検出する磁気抵抗効果型ヘッドにおいて前記磁性膜に
Nbを添加する構成とした。
[Detailed Description of the Invention] [Summary] Regarding a magnetoresistive head, a change in the magnetic field is detected by a change in the resistance value of a magnetoresistive element in which a magnetic film is laminated, with the aim of preventing corrosion of the magnetic film. In the magnetoresistive head, Nb is added to the magnetic film.

〔産業上の利用分野〕[Industrial application field]

本発明は、磁気抵抗効果型ヘッド(以下、MRヘッドと
いう。)に関する。
The present invention relates to a magnetoresistive head (hereinafter referred to as an MR head).

近年、コンピューターの外部記憶装置である磁気ディス
ク装置の大容量化に伴い、高性能磁気ヘッドか要求され
ている。この要求を満足するものとして記録媒体の速度
に依存せず高出力が得られるMRヘッドが注目されてい
る。
In recent years, with the increase in the capacity of magnetic disk drives, which are external storage devices for computers, there has been a demand for high-performance magnetic heads. An MR head that can obtain high output regardless of the speed of the recording medium is attracting attention as a device that satisfies this requirement.

〔従来の技術〕[Conventional technology]

MRヘッドは強磁性薄膜(MR膜)で構成された再生専
用の磁気ヘッドであり、パーマロイ等によって形成され
る強磁性薄膜の電気抵抗が外部磁界によって変化すると
いう磁気抵抗効果を利用して信号磁界の変化を電気抵抗
の変化として検出するものである。そして、上記強磁性
薄膜によって構成される素子は磁気抵抗効果素子(以下
、MR素子という。)といわれている。
An MR head is a read-only magnetic head made of a ferromagnetic thin film (MR film), and uses the magnetoresistive effect, in which the electrical resistance of a ferromagnetic thin film made of permalloy or the like changes depending on an external magnetic field, to generate a signal magnetic field. This detects changes in electrical resistance as changes in electrical resistance. The element constituted by the ferromagnetic thin film is called a magnetoresistive element (hereinafter referred to as an MR element).

従来のMRヘットの構造を第2図(a)、 (b)に示
す。21は矩形のMR素子て、22の反強磁性膜(Fe
Mn)あるいはフェリ磁性膜(TbCo)を積層する。
The structure of a conventional MR head is shown in Figs. 2(a) and (b). 21 is a rectangular MR element, 22 is an antiferromagnetic film (Fe
Mn) or ferrimagnetic film (TbCo) is laminated.

23は引出し導体層、24a、24bは磁気シールドで
ある。MR素子21の長手方向(y軸方向)はMR膜の
容易軸方向と一致し、積層された反強磁性膜(FeMn
)等による交換結合磁界によって、素子内の磁化は容易
軸方向に安定して整列され、単一磁区状態となっている
。なお、バイアス磁界はセルフバイアス法により印加さ
れる。
23 is a lead-out conductor layer, and 24a and 24b are magnetic shields. The longitudinal direction (y-axis direction) of the MR element 21 coincides with the easy axis direction of the MR film, and the laminated antiferromagnetic film (FeMn
) etc., the magnetization within the element is stably aligned in the easy axis direction, resulting in a single magnetic domain state. Note that the bias magnetic field is applied by a self-bias method.

る磁性膜の腐食を防止することを目的として以下の手段
を設けた。
The following measures were provided to prevent corrosion of the magnetic film.

〔課題を解決するための手段〕[Means to solve the problem]

上記課題を解決すへく、本発明では、磁性膜12を積層
した磁気抵抗効果素子11の抵抗値の変化により磁界の
変化を検出する磁気抵抗効果梨ヘットにおいて、前記磁
性膜12にNbを添加する構成とした。
To solve the above problems, the present invention provides a magnetoresistive head that detects a change in a magnetic field based on a change in the resistance value of a magnetoresistive element 11 in which a magnetic film 12 is laminated, in which Nb is added to the magnetic film 12. It was configured to do this.

〔作用〕 防蝕効果のあるNbを添加するため、MR素子11に積
層する磁性膜12の腐食か防止でき、MRヘッドの安定
した再生動作が期待てきる。
[Operation] Since Nb, which has a corrosion-preventing effect, is added, corrosion of the magnetic film 12 laminated on the MR element 11 can be prevented, and stable reproduction operation of the MR head can be expected.

〔発明か解決しようとする課題〕[Invention or problem to be solved]

従来のMRヘッドでは、MR素子に積層する磁性膜(F
eMn、 TbCo)か腐食しやすいという課題かあっ
た。
In conventional MR heads, a magnetic film (F
There was also the problem that they were easily corroded (eMn, TbCo).

そこで、かかる課題に鑑み、MR素子に積層す〔実施例
〕 本発明の実施例について図面と共に説明する。
Therefore, in view of this problem, an embodiment of the present invention, which is laminated to an MR element (Example), will be described with reference to the drawings.

第1図(a)及び(b)は本発明の詳細な説明するため
の図である。
FIGS. 1(a) and 1(b) are diagrams for explaining the present invention in detail.

第1図(a)は本発明のMRヘッドの要部断面図である
。MRヘッドは同図に示すように、2つの磁気シールド
14a・14bの間に、非磁性絶縁層15を介して引き
出し導体層13の内部にMR素子11か配置される構造
となる。
FIG. 1(a) is a sectional view of a main part of the MR head of the present invention. As shown in the figure, the MR head has a structure in which an MR element 11 is placed inside a lead-out conductor layer 13 with a nonmagnetic insulating layer 15 interposed between two magnetic shields 14a and 14b.

MR素子11は、例えばNiFe膜等の強磁性体から成
り、厚さt、は400〜500人の薄膜構造で、幅t2
は3μm程度に設定されている。ここに、MR素子11
の形状は第1図(b)に示すように矩形状になっている
。そして、所定幅で切除され、輻t、と節回−の輻t5
を有する引き出し導体層13と第1図(b)に示すよう
に信号検出領域16の両端で接続している。
The MR element 11 is made of a ferromagnetic material such as a NiFe film, and has a thin film structure with a thickness t of 400 to 500, and a width t2.
is set to about 3 μm. Here, the MR element 11
The shape is rectangular as shown in FIG. 1(b). Then, it is cut with a predetermined width, and the radius t and the radius t5 of the nodal rotation are
As shown in FIG. 1(b), the signal detection area 16 is connected to the lead-out conductor layer 13 having the same structure at both ends.

MR素子11は同一形状の磁性膜12を積層している。The MR element 11 has magnetic films 12 of the same shape stacked together.

MR素子11の容易軸方向に交換結合磁界を印加させる
ためである。交換結合磁界を印加させる膜としては、反
強磁性膜(FeMn)、フェリ磁性膜(TbCo)、高
枕磁性膜(NiFeCo)等か適当である。
This is to apply an exchange coupling magnetic field in the easy axis direction of the MR element 11. The film to which the exchange coupling magnetic field is applied may be an antiferromagnetic film (FeMn), a ferrimagnetic film (TbCo), a high magnetic film (NiFeCo), or the like.

これらの膜は蒸着法、スパッタ法等で形成される。These films are formed by a vapor deposition method, a sputtering method, or the like.

厚さt、は200人程度である。ところか、該磁性膜た
るFeMn等は、腐食し易い。そこで本発明は、腐食防
止効果を有するNbを添加し、磁性膜12をFeMnN
b膜、TbCoNb膜等のように構成した。これにより
磁性膜12の腐食は防止され、MR素子11の安定した
単一磁区化をもたらす。そのため、MRヘッドの再生動
作は安定し、信頼性向上に役立つ。なお、Nbの占める
割合は、一般に、磁性膜質量の数パーセントであり、交
換結合磁界の強さ等を考慮してその含有率か決定される
。Nbの添加により交換結合磁界の強さか多少低減する
からである。なお、交換結合磁界の強さか最も強いもの
はフェリ磁性膜であり、次いて反強磁性膜、高枕磁性膜
となる。第1図(C)及び第1図(d>は本発明に係る
磁性膜12の積層箇所の変形例を示す。同図てはMR素
子11は円環状に形成され、信号検出領域に対向する箇
所に磁性膜12か積層される。同図のようにMR素子及
び磁性膜12の形状は矩形状に限定されない。MR素子
11を円環状にすると、その形状異方性から単一磁区構
造とすることかできる。同IJ (d)は、同図(C)
における積層箇所の右断面図である。磁性膜12は、同
図(d)に示すようにMR素子11の片面にのみ積層し
ていれば十分であり、MR素子11の表面全体を覆うよ
りも交換結合磁界の発生に適する。同図(C)中、縦幅
t6はMR素子11の輻t2よりも大きく、横幅t7は
、信号検出領域16に及ばなければ特に制限はない。信
号検出領域16に及ぶと信号検出に影響するからである
The thickness t is about 200 people. However, the magnetic film, such as FeMn, is easily corroded. Therefore, in the present invention, Nb, which has a corrosion-preventing effect, is added, and the magnetic film 12 is made of FeMnN.
b film, TbCoNb film, etc. As a result, corrosion of the magnetic film 12 is prevented, and the MR element 11 is made into a stable single magnetic domain. Therefore, the reproduction operation of the MR head is stable, which helps improve reliability. Note that the proportion occupied by Nb is generally several percent of the mass of the magnetic film, and its content is determined in consideration of the strength of the exchange coupling magnetic field, etc. This is because the strength of the exchange coupling magnetic field is somewhat reduced by the addition of Nb. Note that the strength of the exchange coupling magnetic field is the strongest in the ferrimagnetic film, followed by the antiferromagnetic film and the high magnetic film. FIG. 1(C) and FIG. 1(d) show modified examples of the laminated portion of the magnetic film 12 according to the present invention. In the figure, the MR element 11 is formed in an annular shape and faces the signal detection area. A magnetic film 12 is laminated at the location.As shown in the figure, the shape of the MR element and the magnetic film 12 is not limited to a rectangular shape.If the MR element 11 is made into a ring shape, it has a single magnetic domain structure due to its shape anisotropy. The same IJ (d) is shown in the same figure (C).
It is a right sectional view of the lamination|stacking location in FIG. It is sufficient that the magnetic film 12 is laminated only on one side of the MR element 11, as shown in FIG. In the figure (C), the vertical width t6 is larger than the radius t2 of the MR element 11, and the horizontal width t7 is not particularly limited as long as it does not extend to the signal detection area 16. This is because if it reaches the signal detection area 16, it will affect signal detection.

また、交換結合磁界を発生させる膜12はMR素子11
の曲率に合わせて積層される必要はない。MR素子11
と接合さえすれば、交換結合磁界か発生するからである
。このようにMR素子11の形状によっては磁性812
は一部にのみ積層されればよい。
Further, the film 12 that generates the exchange coupling magnetic field is the MR element 11.
It is not necessary to stack the layers according to the curvature of. MR element 11
This is because an exchange coupling magnetic field will be generated as long as it is bonded to the material. In this way, depending on the shape of the MR element 11, the magnetic 812
need only be laminated on a portion of the layer.

引き出し導体層13はAu膜等からなる。本実施例では
、第1図(b)のように、MR素子11の輻t2と路間
−の輻t、を存し、直角り型に形成されているが、かか
る形状に限定されることはない。信号検出領域16にセ
ンス電流18か流れれば十分だからである。信号検出領
域の幅t4は、2〜3μm程度である。
The lead conductor layer 13 is made of an Au film or the like. In this embodiment, as shown in FIG. 1(b), there is a radiation t2 of the MR element 11 and a radiation t between the paths, and it is formed in a right-angled shape, but it is not limited to this shape. There isn't. This is because it is sufficient that the sense current 18 flows through the signal detection region 16. The width t4 of the signal detection area is approximately 2 to 3 μm.

磁気シールド14a、14bはNiFeあるいはフェラ
イト材等からできている。これらは、記録媒体17から
の信号磁界に対し、MR素子11の再生分解能を高める
働きをするものである。
The magnetic shields 14a and 14b are made of NiFe, ferrite material, or the like. These serve to enhance the reproduction resolution of the MR element 11 with respect to the signal magnetic field from the recording medium 17.

MR素子11、磁性膜12及び引き出し導体層13は2
つの磁気シールド14a、14bの間に配置され、これ
らはSiO□膜あるいはAl2O*膜の非磁性絶縁層1
5を介して磁気シールドと電気的に絶縁される構成とな
っている。MR素子11は非磁性絶縁層14の内部に配
置されている。外部磁界あるいは外部電流の影響を受け
ないようにするためである。
The MR element 11, the magnetic film 12 and the lead-out conductor layer 13 are
These are arranged between two magnetic shields 14a and 14b, and these are formed by a nonmagnetic insulating layer 1 of SiO□ film or Al2O* film.
It is configured to be electrically insulated from the magnetic shield via 5. The MR element 11 is arranged inside the nonmagnetic insulating layer 14. This is to avoid being influenced by external magnetic fields or external currents.

センス電流18は、引き出し導体層12を通してMR素
子11の信号検出領域16に流れる。そして、前述のセ
ルフバイアス方式によりMRが線型動作することによっ
て、MRヘッドは、直下を移動する磁気記録媒体17か
らの信号磁界を検知する。この際、前述した発明原理に
従いMR素子11は単一磁区構造となるのでバルクハウ
ゼン雑音は発生しない。
The sense current 18 flows into the signal detection region 16 of the MR element 11 through the extraction conductor layer 12. Then, as the MR operates linearly using the above-described self-bias method, the MR head detects a signal magnetic field from the magnetic recording medium 17 moving directly below. At this time, Barkhausen noise does not occur because the MR element 11 has a single magnetic domain structure according to the above-described inventive principle.

なお、これらの例では、MRヘッド再生の線型化方式に
はセルフバイアス法を用いているか、本発明は、線型化
のバイアス手段について特に制限しない。バイアス方式
としては、他のシャントバイアス法あるいは永久磁石バ
イアス法、電流バイアス法、バーバーポールバイアス法
等のいずれであっても良い。
Note that in these examples, the self-bias method is used as the linearization method for MR head reproduction, and the present invention does not particularly limit the bias means for linearization. The bias method may be any other shunt bias method, permanent magnet bias method, current bias method, barber pole bias method, or the like.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明によればMRヘッドの再生
動作を安定化するため配置した磁性膜の腐食を防止でき
、信頼性の高いMRヘッドを提供できる。
As described above, according to the present invention, it is possible to prevent corrosion of the magnetic film disposed to stabilize the reproduction operation of the MR head, and to provide a highly reliable MR head.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)は本発明の実施例によるMRヘッドの要部
断面図、 第1N(b)は本発明の実施例によるMR素子の要部斜
視図、 第1図(C)は本発明の磁性膜の配置の変形例を説明す
る図、 第1図(d)は第1図(c)のd−d断面図、第2図(
a)は従来のMRヘッドを示す要部断面図、 第2図(b)は従来のMR素子の要部斜視図である。 図において、 11.21はMR素子、 12.22は磁性膜、 13.23は引き出し導体層、 14a、24aは磁気シールド、 14b、24bは磁気シールド、 15.25は非磁性絶縁層、 16.26は信号検出領域、 17.27は磁気記録媒体、 18.28はセンス電流、 を示す。 本発明の実施例1こよるMRヘッドの要部断面図第 図(a) 18f?ンス電流 16偏号検出W域 本発明の実施例1こよるMR*子の要部杓視図第1図(
b) 第 図(C) 11°MR素子 VTl rjiT (c ) qd −d ml舶N第
1図(d)
FIG. 1(a) is a cross-sectional view of a main part of an MR head according to an embodiment of the present invention, FIG. 1N(b) is a perspective view of a main part of an MR element according to an embodiment of the present invention, and FIG. 1(C) is a cross-sectional view of a main part of an MR head according to an embodiment of the present invention. Figure 1(d) is a sectional view taken along the line dd in Figure 1(c), and Figure 2(d) is a diagram illustrating a modification of the arrangement of the magnetic film in
FIG. 2A is a sectional view of a main part of a conventional MR head, and FIG. 2B is a perspective view of a main part of a conventional MR element. In the figure, 11.21 is an MR element, 12.22 is a magnetic film, 13.23 is an extraction conductor layer, 14a and 24a are magnetic shields, 14b and 24b are magnetic shields, 15.25 is a non-magnetic insulating layer, 16. 26 is a signal detection area, 17.27 is a magnetic recording medium, and 18.28 is a sense current. Embodiment 1 of the present invention FIG. 18f is a sectional view of a main part of an MR head according to the first embodiment. Embodiment 1 of the present invention FIG.
b) Figure (C) 11° MR element VTl rjiT (c) qd -d ml vessel N Figure 1 (d)

Claims (3)

【特許請求の範囲】[Claims] (1)磁性膜(12)を積層した磁気抵抗効果素子(1
1)の抵抗値の変化により磁界の変化を検出する磁気抵
抗効果型ヘッドにおいて、前記磁性膜(12)にNbを
添加したことを特徴とする磁気抵抗効果型ヘッド。
(1) Magnetoresistive element (1) laminated with magnetic film (12)
1) A magnetoresistive head for detecting a change in a magnetic field by a change in resistance value, characterized in that Nb is added to the magnetic film (12).
(2)前記磁性膜(12)を反強磁性膜とした請求項1
記載の磁気抵抗効果型ヘッド。
(2) Claim 1 in which the magnetic film (12) is an antiferromagnetic film.
The described magnetoresistive head.
(3)前記磁性膜(12)をフェリ磁性膜とした請求項
1記載の磁気抵抗効果型ヘッド。
(3) The magnetoresistive head according to claim 1, wherein the magnetic film (12) is a ferrimagnetic film.
JP21126390A 1990-08-08 1990-08-08 Magnetoresistive head Pending JPH0495205A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21126390A JPH0495205A (en) 1990-08-08 1990-08-08 Magnetoresistive head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21126390A JPH0495205A (en) 1990-08-08 1990-08-08 Magnetoresistive head

Publications (1)

Publication Number Publication Date
JPH0495205A true JPH0495205A (en) 1992-03-27

Family

ID=16603018

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21126390A Pending JPH0495205A (en) 1990-08-08 1990-08-08 Magnetoresistive head

Country Status (1)

Country Link
JP (1) JPH0495205A (en)

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