JPH0469948A - Manufacturing method of semiconductor device - Google Patents

Abstract

PURPOSE:To prevent Al, etc., from remaining after etching and reduce failures caused by the Al, etc., sticking on an IC chip in the next production process, by introducing such production processes that a silicon substrate is not exposed on a scribe surface, forming insulation films. CONSTITUTION:On an N-type silicon substrate 100, an insulation film 101 made of silicon dioxide is formed by a conventional thermal oxidation method. Then, Al 102 is formed by a conventional deposition or sputtering. Then, since the Al 102 is unnecessary in a scribe region, it is removed by etching. Then, a passivation film 103 is formed on a pattern. Through the foregoing production processes, the scribe region is formed.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device, particularly an integrated circuit formed by a wafer process.

[Summary of the invention]

The present invention provides a method for manufacturing a semiconductor device in which an insulating film is formed in the scribe region and a structure is adopted in which the silicon substrate is not directly exposed, thereby eliminating A1 etching caused by resist residue in the scribe region [prior art]. As shown in FIG. 2, a process is used in which the silicon substrate is exposed in the scribe area.

[Problem to be solved by the invention]

However, in the above-mentioned conventional technology, etching is performed to expose the silicon substrate in each step of the process, so the silicon substrate in the scribe area is gradually etched in each etching step (particularly at the scribe end). In this case, the silicon substrate is etched to such an extent that the edges of the insulating film become sparse.Under these circumstances, during the next process, especially during resist exposure during the formation of the A1 wiring, the silicon substrate is coated on the scribe edges as described above. The exposed resist may not be exposed sufficiently.As a result, in the next resist stripping process, this Al may detach and adhere to the surface of the chip, causing reliability problems. .

The present invention is intended to solve these problems of conventional semiconductor devices, and its objectives are as follows.

The goal is to provide more stable and reliable semiconductor devices.

[Means to solve the problem]

The method for manufacturing a semiconductor device of the present invention is characterized by comprising a step in which the silicon substrate is not exposed on the scribe surface in the scribe region of the silicon wafer.

〔Example〕

FIG. 1 is a cross-sectional view of a manufacturing process of a semiconductor device according to an embodiment of the present invention.

First, as shown in Figure 1 (α), the specific resistance is 10 (Ω-m
) An insulating film 1.01 made of silicon dioxide is formed by a normal thermal oxidation method on an N-type silicon substrate 100.

Next, as shown in FIG. 1Cb), A'1102 is formed by conventional vapor deposition or sputtering.

Next, as shown in FIG. 1(c), since the A1102 formed above is not needed in the scribe area, it is removed by etching.

Next, as shown in FIG. 1(d), a passivation film 105 is formed on the pattern.

A scribe area is formed through the above steps. In this embodiment, a structure is adopted in which a layer of the insulating film is left in the scribe region, but if a multilayer wiring structure has an interlayer insulating film, it is also effective to leave this interlayer insulating film as well. however,
Leaving a passivation film should be avoided since cracks in the passivation during dicing may affect the reliability of the IO chip.

〔Effect of the invention〕

As described above, according to the present invention, as a measure to prevent defects caused by remaining A1 in the scribe area, silicon in the scribe area is This can prevent the substrate from being deeply etched. As a result, it prevents etching residue such as A1, and the next process
It is possible to reduce defects caused by adhesion of such substances on the 20-chip, and it is possible to provide a more reliable semiconductor device.

[Brief explanation of drawings]

FIGS. 1(α) to 1(d) are cross-sectional views of the manufacturing process of a semiconductor device according to an embodiment of the present invention. FIG. 2 is a cross-sectional view showing the structure of a conventional semiconductor device.
Ru. 100...N-type silicon substrate 101...
...... Insulating film 102 ...... A 1 103 ...... Passivation film (cl) Fig. 2

Claims (1)

[Claims] A method for manufacturing a semiconductor device, comprising a step in which a silicon substrate is not exposed on the scribe surface in a scribe region of a silicon wafer.