JPH02194530A - Manufacturing method of semiconductor device - Google Patents

Abstract

PURPOSE:To prevent a bonding pad from being stripped off and to easily measure a film thickness of an interlayer insulating film by a method wherein a lower layer of the bonding pad, a scribe region and an SOG film are isolated by using a polyimide film. CONSTITUTION:A field oxide film 2 is formed on the surface of a semiconductor substrate 1; an alignment pattern 3 is formed in a scribe region in between; an insulating film 4 is formed on the surface of the oxide film 2; a wiring layer 5 is formed on it; an interlayer insulating film 6 and a polyimide film 7 are formed one after another on the whole surface. Then, a resist film is formed on the whole surface of the polyimide film 7; the resist film in a region in which the polyimide film 7 is to be left is patterned; a resist film 8 is formed; the polyimide film 7 is etched and removed by using it as a mask. Then, the resist film 8 is removed; an SOG film 9 is formed on the whole surface; after that, the whole surface is etched; the surface of the interlayer insulating film 6 and the polyimide film 7 is exposed. After that, the polyimide film 7 is removed completely. Lastly, an interlayer insulating film 10 is formed on the whole surface; after that, it is patterned; a wiring layer 11 is formed on the surface of the scribing region and the interlayer insulating film 10.

Description

[Detailed Description of the Invention] [Summary] Regarding the improvement of the method for forming a bonding pad, the present invention is to prevent the peeling of the bonding pad during the bonding process by not forming an SOG film under the bonding pad,
The purpose of the present invention is to provide a method for manufacturing a semiconductor device that makes it possible to easily measure the thickness of an interlayer insulating film in a scribe region, and to provide a method for manufacturing a semiconductor device that makes it possible to easily measure the thickness of an interlayer insulating film in a scribe region. , form a field oxide film that defines a scribe region on its surface, form an alignment pattern in the scribe region, form an insulating film on the surface of the MiN field oxide film, and pattern a wiring layer on the surface of the insulating film. an interlayer insulating film is formed on the entire surface,
forming a polyimide film on the entire surface of the semiconductor substrate, patterning and forming a resist film on the surface of the polyimide film corresponding to the area where the uppermost wiring layer will be formed, and masking the resist film. forming an SOG film on the surfaces of the interlayer insulating film and the polyimide film, and etching the entire surface of the SOG film until the mth interlayer insulating film and the polyimide film are exposed; The polyimide film is removed, an interlayer insulating film is formed on the entire surface, and patterned to define the scribe region, and a wiring layer is formed on the surface of the atomic film.

[Industrial application field]

The present invention relates to a method for manufacturing a semiconductor device, and particularly to an improvement in a method for forming a bonding pad.

The degree of integration of semiconductor devices has been increasing rapidly in recent years, and two-layer products made of aluminum (AI) have appeared in DRAMs as well, and flattening is increasingly required.

A spin-on-glass film (hereinafter abbreviated as SOG film) is used as one of the flattening methods, but SO
G IJ! is formed under the bonding band, the SOG film will peel off due to the pressure applied to the bonding band by the bonding capillary during the wire bonding process for assembling the semiconductor device.
As a result, a problem occurs in which the bonding band peels off.

In addition, SOG is used for planarization in the wafer process.
When a film is used, it is difficult to measure the thickness of the interlayer insulating film in the scribe area.

Due to the above situation, SO is placed in the lower layer of the bonding band.
There is a need for a method of manufacturing a semiconductor device that makes it possible to easily measure the thickness of an interlayer insulating film in a scribe region without forming a G film.

[Conventional technology]

A conventional method for manufacturing a semiconductor device will be explained step by step with reference to FIG.

First, as shown in FIG. 2(a), a field oxide film 22 is formed on the surface of a semiconductor substrate 21 to define a scribe area.
An alignment pattern 23 is formed in this scribe region, an insulating film 24 is formed on the surface of this field oxide film 22, and a wiring layer,
For example, by patterning the aluminum layer 25,
An interlayer insulating film 26 is formed on the entire surface, and an SOG film 21 is formed on the entire surface.
] to form.

Next, as shown in FIG.
The entire surface of the G film 29 is etched.

Then, as shown in FIG. 2 (te+), a layer 30 is formed on the entire surface with an interlayer ratio of ♀.

υj First, as shown in FIG. 2(d), this interlayer insulating film 30 is patterned to form a scribe region, and a wiring layer, for example, an aluminum layer 31, which will become a bonding band is formed on the surface of the interlayer insulating film 30. Form.

C Problems to be Solved by the Invention] In the wire bonding process of a semiconductor device using a semiconductor chip manufactured by the conventional semiconductor device manufacturing method described above, the bonding band is peeled off due to the pressure applied to the bonding band by the bonding capillary. A failure has occurred.

In order to remove such obstacles, there are two methods: ■ Etching back until the S C'l G film disappears, or ■ Patterning only the S One possible method is to remove it by etching it.

However, in method (2), as the amount of etching increases, the insulating film on the field oxide film is etched, and the depth 5'X becomes thinner.
There is a problem that the raw capacitance increases or the SOG film between the aluminum layers is almost eliminated due to notching, and the planarization by the SOG film becomes meaningless.
This method not only increases the number of steps for patterning SOG and 11Q, but also has the problem that the interlayer insulating film with the bulk becomes thinner, resulting in an increase in wiring capacitance.

In addition, SOG is used for planarization in the wafer process.
When a film is used, the thickness of the interlayer insulating film in the scribe area is measured using an optical measuring device or a comparative visual method using a color sample based on the alignment pattern in the scribe area or the step between the interlayer insulating film and the surface of the semiconductor substrate. The problem was that it was becoming difficult to

In view of the above-mentioned circumstances, the present invention prevents the peeling of the bonding pad during the bonding process by not forming an SOG film under the bonding pad. The object of the present invention is to provide a method for manufacturing a semiconductor device that allows thickness measurement to be easily performed.

(Means for Solving the Problems) The method for manufacturing a semiconductor device of the present invention includes the steps of forming the uppermost wiring layer of a semiconductor device including multiple wiring layers.
A field oxide film that defines each scribe region a is formed on the surface, an alignment pattern is formed in this scribe region, an insulating film is formed on the surface of this field oxide film, and wiring is formed on the surface of this insulator 11. This corresponds to the 8I region, which involves forming a polyimide film on the entire surface of a semiconductor substrate by patterning layers and forming an interlayer insulating film over the entire surface, and forming the uppermost wiring layer on the surface of this polyimide film. A resist film is patterned and formed, and the polyimide film is patterned using the resist 1-1 as a mask.An SOG film is formed on the surface of the interlayer insulating films 1 and 2 and the 71 mmimide film, and this interlayer insulating film is formed. A process of etching the SOG Jiff over the entire surface until the polyimide film is exposed, removing this polyimide pattern, forming an interlayer insulating film on the entire surface, patterning to define the scribe N area, and removing the intercostal insulating film. [Function] In the present invention, patterning is applied to the region of the lower layer corresponding to the region where the ponding pad of the two most wiring layers is formed. A SOG film is formed on the surface of the formed polyimide film, and Bo1! (Imide) After removing the SOG film on the surface of the polyimide film using Enosen Bank, this polyimide film can be selectively removed with respect to the SOG film by oxygen ashing. There is no SOG film in the lower layer region corresponding to the region where the pad is formed, and this prevents the bonding pad from peeling off during the bonding process (1) and (1) during the manufacturing of semiconductor devices. becomes possible.

Furthermore, since no SOG film remains in the scribe area, it is possible to easily measure the thickness of the interlayer insulating film in this area.

〔Example〕

An embodiment of the present invention will be described below in order of steps regarding the first H.

First, as shown in FIG. 1 (11+), the semiconductor as+ii
A field l' oxide film 2 is formed on the surface of the field oxide film 20 to define a scribe area, an alignment pattern 3 is formed on this scribe area, and the field oxide film 20 is formed on the surface lT11
An insulating film 4 is formed on the surface of the insulating film 4, a wiring layer such as an aluminum layer 5 is patterned and formed on the surface of the insulating film 4, and an interlayer insulating film 6 made of a CVD silicon oxide film is formed on the entire surface. This polyimide II/27 was cut into a shape.

Next, a resist/film is formed on the entire surface of the polyimide film 7, and as shown in FIG. A film 8 is formed, and using this resist film 8 as a mask, the polyimide film 7 is coated in the following steps. Etching is performed using 1' oxygen 1' souring or a developer for positive cysts.

Reaction, reaction gas-----111-----
Oxygen (Oz) reaction crab U M-------・-・-
---31/RO] Reaction chamber ip ---1・-・-～-・
・=1.0 Torr substrate heating temperature −・−・−・−・
・−・−１１１−−−・−・−・−ioo℃High frequency power supply frequency・・・−・・・−・−・−・13.56 MHz
High-frequency high-frequency power supply - car - - - - - - - - - - -
-m-......500W Then, the resist film 8 is removed using a commercially available resist stripping solution or butyl acetate, and as shown in FIG. 1(C), 5OGLJ is applied to the entire surface.
9 is formed and annealed.

The entire surface of this SOG film 9 is etched to expose the surfaces of the interlayer insulating film 6 and the polyimide film 7, as shown in FIG.

Thereafter, as shown in FIG. 1(el), the polyimide film 7 is completely removed by oxygen ashing, which is the same as the patterning process shown in FIG. 1(b).

Finally, as shown in FIG. 1(f), an interlayer insulating film 10 is formed on the entire surface, and as shown in FIG. 1(g), this interlayer insulating film 10 is patterned to form a scribe region.
A wiring layer, for example, an aluminum layer 11, which will become a bonding pad, is formed on the surface of the interlayer insulating film 10.

In this way, by using the polyimide film 7, SO is added to the lower layer of the aluminum layer 11 which becomes the bonding pad.
To prevent the formation of G film 9, 3001g1%
It becomes possible to prevent the bonding band from peeling off due to No. 9.

In addition, SOG is used for planarization in the wafer process.
As in the conventional manufacturing method using a film, the step difference in the alignment pattern or the like in the scribe area facilitates the measurement of the thickness of the interlayer insulating film in the scribe area by a comparative visual method using an optical measuring device or a color sample.

〔Effect of the invention〕

As is clear from the above description, according to the present invention, since the polyimide film is used to prevent the presence of the SOG film in the lower layer of the bonding band and the scribe area, it is possible to prevent the bonding pad from peeling off during the bonding process. It also has the advantage of making it easier to measure the thickness of the interlayer insulating film during the wafer process.
It is possible to provide a method for manufacturing a semiconductor device that can be expected to be significantly economical and to improve reliability.

[Brief explanation of the drawing]

FIG. 1 is a side cross-sectional view showing an embodiment of the present invention in order of steps, and FIG. 2 is a side cross-sectional view showing a conventional method for manufacturing a semiconductor device in order of steps. In the figure, 1 is a semiconductor substrate, 2 is a field oxide film, 3 is an alignment pattern, 4 is an insulating film, 5 is an aluminum layer,
6 is an interlayer insulating film, 7 is a polyimide film, 8 is a resist film, 9 is an SOG film, 10 is an interlayer insulating film, and 11 is an aluminum layer.

Claims (1)

[Claims] In the process of forming the uppermost wiring layer of a semiconductor device having multiple wiring layers, a field oxide film (2) defining a scribe region is formed on the surface thereof, and alignment is applied to the scribe region. A pattern (3) is formed, an insulating film (4) is formed on the surface of the field oxide film (2), and a wiring layer (5) is patterned and formed on the surface of the insulating film (4). A step of forming a polyimide film (7) on the entire surface of the semiconductor substrate (1) on which an interlayer insulating film (6) has been formed, and a step of forming an uppermost wiring layer (1) on the surface of the polyimide film (7).
A step of patterning and forming a resist film (8) corresponding to the region where 1) is to be formed, and patterning the polyimide film (7) using the resist film (8) as a mask; A spin-on-glass (SOG film) (9) is formed on the surface of the polyimide film (7), and the SOG film (9) is removed until the interlayer insulating film (6) and the polyimide film (7) are exposed. A step of etching the entire surface, and removing the polyimide film (7) and forming an interlayer insulating film (10).
is formed on the entire surface and patterned to define the scribe area, and a wiring layer (10) is formed on the surface of the interlayer insulating film (10).
1) A method for manufacturing a semiconductor device, comprising: a step of forming 1);