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JPH0440868B2 - - Google Patents

Info

Publication number
JPH0440868B2
JPH0440868B2 JP60044319A JP4431985A JPH0440868B2 JP H0440868 B2 JPH0440868 B2 JP H0440868B2 JP 60044319 A JP60044319 A JP 60044319A JP 4431985 A JP4431985 A JP 4431985A JP H0440868 B2 JPH0440868 B2 JP H0440868B2
Authority
JP
Japan
Prior art keywords
type semiconductor
input terminal
conductivity type
region
mis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60044319A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61203680A (ja
Inventor
Kazuhito Misu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP60044319A priority Critical patent/JPS61203680A/ja
Publication of JPS61203680A publication Critical patent/JPS61203680A/ja
Publication of JPH0440868B2 publication Critical patent/JPH0440868B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs

Landscapes

  • Protection Of Static Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP60044319A 1985-03-06 1985-03-06 Ｍｉｓ型半導体装置 Granted JPS61203680A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60044319A JPS61203680A (ja) 1985-03-06 1985-03-06 Ｍｉｓ型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60044319A JPS61203680A (ja) 1985-03-06 1985-03-06 Ｍｉｓ型半導体装置

Publications (2)

Publication Number Publication Date
JPS61203680A JPS61203680A (ja) 1986-09-09
JPH0440868B2 true JPH0440868B2 (it) 1992-07-06

Family

ID=12688163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60044319A Granted JPS61203680A (ja) 1985-03-06 1985-03-06 Ｍｉｓ型半導体装置

Country Status (1)

Country Link
JP (1) JPS61203680A (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2557980B2 (ja) * 1989-05-26 1996-11-27 富士通株式会社 半導体入力保護装置
KR101244969B1 (ko) 2008-10-20 2013-03-18 후지텍크가부시키가이샤 엘리베이터의 안전 장치

Also Published As

Publication number Publication date
JPS61203680A (ja) 1986-09-09

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees