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JPH04359542A - Method of wiring semiconductor integrated circuit - Google Patents

Method of wiring semiconductor integrated circuit

Info

Publication number
JPH04359542A
JPH04359542A JP13473391A JP13473391A JPH04359542A JP H04359542 A JPH04359542 A JP H04359542A JP 13473391 A JP13473391 A JP 13473391A JP 13473391 A JP13473391 A JP 13473391A JP H04359542 A JPH04359542 A JP H04359542A
Authority
JP
Japan
Prior art keywords
wiring
wiring pattern
location
detour
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13473391A
Other languages
Japanese (ja)
Inventor
Katsuki Suzuki
勝喜 鈴木
Takemoto Ishii
建基 石井
Yasuo Sato
康夫 佐藤
Chifumi Ishigooka
石郷岡 千文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Software Engineering Co Ltd
Hitachi Ltd
Original Assignee
Hitachi Software Engineering Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Software Engineering Co Ltd, Hitachi Ltd filed Critical Hitachi Software Engineering Co Ltd
Priority to JP13473391A priority Critical patent/JPH04359542A/en
Publication of JPH04359542A publication Critical patent/JPH04359542A/en
Pending legal-status Critical Current

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、多層配線層を有する半
導体集積回路のチップ製造後、チップ上でFIB、レー
ザCVD等を用いて配線の一部を修正加工して論理変更
に対応する補修を行う際、この加工を容易にするための
チップ製造時の配線技術に関する。
[Industrial Application Field] The present invention is a semiconductor integrated circuit having multi-layer wiring layers. After manufacturing a chip, a part of the wiring is corrected using FIB, laser CVD, etc. on the chip, and repairs are performed to accommodate logic changes. This paper relates to wiring technology during chip manufacturing to facilitate this processing.

【0002】0002

【従来の技術】半導体集積回路のチップ製造後、チップ
上で配線の一部を修正加工して論理変更を行う技術は特
開昭62−229956に記載のようにFIB、レーザ
CVD等を用いて行うと報告されている。
2. Description of the Related Art After manufacturing a semiconductor integrated circuit chip, a technique for modifying part of the wiring on the chip to change the logic uses FIB, laser CVD, etc., as described in Japanese Patent Application Laid-Open No. 62-229956. It is reported that it will.

【0003】半導体集積回路のチップ製造後、チップ上
でFIB、レーザCVD等を用いて配線の一部を修正加
工して論理変更に対応する補修を行う際の加工を容易に
するためのチップ製造時の配線技術としては、特開平0
2−15657に記載のように、配線パターンの引上げ
、及び配線パターンの迂回部を設け、この場所で補修を
行うことで加工の歩留まりを向上させる技術について報
告されている。
[0003] After manufacturing a semiconductor integrated circuit chip, a part of the wiring on the chip is modified using FIB, laser CVD, etc. to facilitate processing when repairing in response to logic changes. As for the wiring technology at the time, JP-A-0
As described in 2-15657, a technique has been reported in which the yield of processing is improved by pulling up the wiring pattern and providing a detour section for the wiring pattern and performing repairs at this location.

【0004】0004

【発明が解決しようとする課題】上記従来技術は、単に
配線パターンをLSI表面に最も近い論理配線層に引き
上げ、さらに配線パターンに迂回部を設け、この場所で
補修を行うという技術についてのみ述べられている。し
かしLSIには論理配線層の上に電源配線層が存在した
りさらに電源端子、入出力端子が存在するLSIがある
。この場合、配線パターンをせっかく上層へ引き上げて
も電源配線、電源端子、入出力端子等が加工の障害物と
なって加工不可となったり、加工可でも歩留まりが低下
してしまうという問題点があった。
[Problems to be Solved by the Invention] The above-mentioned prior art merely describes a technique in which the wiring pattern is pulled up to the logic wiring layer closest to the LSI surface, a detour is provided in the wiring pattern, and repairs are performed at this location. ing. However, some LSIs have a power supply wiring layer on top of the logic wiring layer, and further have power supply terminals and input/output terminals. In this case, there is a problem that even if the wiring pattern is brought up to the upper layer, power supply wiring, power supply terminals, input/output terminals, etc. become obstacles to processing, making it impossible to process, or even if processing is possible, the yield decreases. Ta.

【0005】本発明は上記電源配線、電源端子、入出力
端子等を考慮することで、補修時の電源配線の切欠きを
極力低減して加工歩留まりを向上させ、さらに物理的に
補修可能な配線を増やすことを目的とする。
The present invention takes into consideration the power supply wiring, power supply terminals, input/output terminals, etc., thereby reducing cutouts in the power supply wiring as much as possible during repair, improving processing yield, and furthermore, making the wiring physically repairable. The aim is to increase

【0006】[0006]

【課題を解決するための手段】上記目的を達成させるた
めの手段として以下の発明を提供する。
[Means for Solving the Problems] The following invention is provided as a means for achieving the above object.

【0007】第一の発明は、FIB、レーザCVD等で
の論理変更が許される論理信号配線パターンをLSI表
面に最も近い論理信号配線層に引き上げておくとき、そ
の配線の上空に加工の障害物となる電源端子、入出力端
子、電源配線等がない場所を含む配線パターンとなるよ
うに引上げ場所を選択して配線パターンの引上げを行う
ことを特徴とする。
The first invention is that when a logic signal wiring pattern whose logic is allowed to be changed by FIB, laser CVD, etc. is pulled up to the logic signal wiring layer closest to the surface of the LSI, there is an obstacle to processing in the air above the wiring. The wiring pattern is pulled up by selecting a pulling location so that the wiring pattern includes a location where there are no power terminals, input/output terminals, power wiring, etc.

【0008】第二の発明は、FIB、レーザCVD等で
の論理変更が許される論理信号配線パターンに対して、
該配線パターンに隣接する配線パターンの一部又は該配
線パターンの一部にお互いの配線パターンの間隔を拡張
する迂回部を設けるとき、この迂回部の上空に加工の障
害物となる電源端子、入出力端子、電源配線等がない場
所を含む迂回部となるよう迂回場所を選択して、ここで
迂回を行うことを特徴とする。
[0008] The second invention is for a logic signal wiring pattern that allows logic changes by FIB, laser CVD, etc.
When a detour part is provided in a part of the wiring pattern adjacent to the wiring pattern or in a part of the wiring pattern to extend the distance between the wiring patterns, there are no power terminals or input terminals in the air above the detour part that become obstacles to processing. The present invention is characterized in that a detour location is selected so as to include a location where there are no output terminals, power supply wiring, etc., and the detour is performed at this location.

【0009】第三の発明は、配線パターンの引上げ場所
、配線パターン迂回場所選択時の障害物考慮において、
電源配線のようにFIBで加工可能な障害物と電源端子
、入出力端子等加工が極めて困難な障害物を異なる選択
条件としてレベル分けして考慮することを特徴とする。
[0009] A third aspect of the invention is to take obstacles into consideration when selecting a wiring pattern pull-up location and a wiring pattern detour location.
The feature is that obstacles that can be processed by FIB, such as power supply wiring, and obstacles that are extremely difficult to process, such as power supply terminals and input/output terminals, are considered in different levels as different selection conditions.

【0010】第四の発明は、配線パターンの引上げ場所
、配線パターン迂回場所選択時、条件を満たす場所が存
在しない配線については補修容易性考慮を目的とした配
線パターンの引上げ、及び配線パターンの迂回は実施し
ないことを特徴とする。
[0010] The fourth invention is to raise the wiring pattern and detour the wiring pattern for the purpose of considering repairability for wiring for which there is no place that satisfies the conditions when selecting a wiring pattern lifting location and wiring pattern detouring location. is characterized by not being carried out.

【0011】[0011]

【作用】本発明請求項1によれば、LSI表面に最も近
い論理信号配線層に引き上げられた論理信号配線をFI
B、レーザCVDで加工するとき、その配線の上空に加
工の障害物となる電源端子、入出力端子、電源配線等が
ないため、障害物を除去する切り欠き等の加工が不要と
なる作用がある。さらに障害物により補修を断念すると
いう事態を避けることができる作用がある。
[Operation] According to claim 1 of the present invention, the logic signal wiring pulled up to the logic signal wiring layer closest to the LSI surface is connected to the FI
B. When processing with laser CVD, there are no power terminals, input/output terminals, power wiring, etc. that would be obstacles to processing above the wiring, so there is no need to process such as cutouts to remove obstacles. be. Furthermore, it is possible to avoid situations where repairs are abandoned due to obstacles.

【0012】本発明請求項2によれば、論理信号配線パ
ターンにおいて、隣接する配線パターンとの間にお互い
の配線パターンの間隔を拡張する迂回部を設けた論理信
号配線パターンを迂回部でFIB、レーザCVDにより
加工するとき、この迂回部の上空に加工の障害物となる
電源端子、入出力端子、電源配線等がないため、障害物
を除去する切り欠き等の加工が不要となる作用がある。 さらに障害物により補修を断念するという事態を避ける
ことができる作用がある。
According to claim 2 of the present invention, in the logic signal wiring pattern, a logic signal wiring pattern in which a detour part is provided between adjacent wiring patterns to extend the interval between each wiring pattern is connected to an FIB at the detour part. When processing by laser CVD, there are no power terminals, input/output terminals, power wiring, etc. that would be obstacles to processing above this detour, so there is no need to process such as cutouts to remove obstacles. . Furthermore, it is possible to avoid situations where repairs are abandoned due to obstacles.

【0013】本発明請求項3によれば、電源端子、入出
力端子、電源配線をレベルの異なる障害物として扱うと
する。例えば電源端子、入出力端子は100%禁止、電
源配線については該当場所が無い場合にかぎり許可する
とする。これにより条件が緩和され、より多くの配線を
補修可能な配線領域に割り当てることが可能となる作用
がある。
According to claim 3 of the present invention, the power supply terminal, input/output terminal, and power supply wiring are treated as obstacles of different levels. For example, power supply terminals and input/output terminals are 100% prohibited, and power supply wiring is permitted only if there is no corresponding location. This has the effect of easing the conditions and making it possible to allocate more wiring to repairable wiring areas.

【0014】本発明請求項4によれば、配線パターンの
引上げ場所、配線パターンの迂回場所の上空に障害物が
存在して補修が不可となる配線については、配線パター
ンの引上げ、配線パターンの迂回処理を行わないことで
余分な配線チャネルを使用して、他の配線の引上げ、迂
回の邪魔をしたり、無駄なスルーホール、パターンを生
成して歩留まりを低下させたりする悪い要素を取り除く
作用がある。
According to claim 4 of the present invention, for wiring that cannot be repaired due to the existence of an obstacle above the wiring pattern pulling up place or the wiring pattern detouring place, the wiring pattern can be pulled up or the wiring pattern can be detoured. By not performing any processing, extra wiring channels are used to remove bad elements that obstruct the pulling up or detour of other wiring, or generate unnecessary through holes and patterns that reduce yield. be.

【0015】[0015]

【実施例】以下、本発明の実施例を図面により詳細に説
明する。
Embodiments Hereinafter, embodiments of the present invention will be explained in detail with reference to the drawings.

【0016】図1(a)にLSIを上空から見た正面図
、(b)に断面図を示す。例えば図1に示すようにLS
Iの表面には電源配線層、電源端子、入出力信号端子等
が存在する。そしてその下に配線層として3層、2層、
1層が存在する。例えばFIB、レーザCVDによるL
SIの補修はチップ上空より行う為、LSI表面に最も
近い配線層(図1では3層)の方が加工が容易なため図
2に示すよう配線の一部を3層に引き上げる処理が行わ
れる。さらに加工時に隣接配線との接触、過剰切断等を
防止する処置として図3に示すよう配線の一部に隣接配
線との間隔を拡張した場所をもうける処理が行われる。 図2、図3の処理は特開平02−15657で述べられ
ている。ところが実際に3層に引き上げられた配線を切
断するにはその上空の電源配線、電源端子、入出力信号
端子等が障害となる。しかし電源配線、電源端子、入出
力信号端子は表面の全てをおおっているわけではなく、
図1の101で示すポイントの様にどちらも存在しない
場所がある。この場所から加工を行えば特開昭63−1
57438で記載されたような電源配線をFIBで切り
欠いたりする必要はなく、直接加工が行える。また障害
物が電源配線のみなら切欠きにより対処できるが、その
上に電源端子、または入出力信号端子が存在するとFI
Bによる加工は困難となり、加工対象となる配線が全て
電源端子の下だと加工を断念することになり、論理変更
が行えないという問題が発生する。このように101の
条件(LSI表面に最も近い配線層でかつ、上空に電源
配線、電源端子、または入出力信号端子が存在しない場
所)を満たす場所で図2、図3に示す処理を行えば、1
00%加工が可能となり、加工時の加工時間の削減、歩
留まりの向上を行う効果がある。本実施例では障害物と
して電源配線、電源端子、入出力信号端子を例に上げた
が、これら以外でも加工の障害となる物があればそれら
を避けることで同等の効果を得ることは可能である。ま
た上記で述べた通り障害物にはFIBで切り欠くことに
より対処可能な障害物と電源端子、入出力信号端子の様
に対処困難な障害物がある。これら障害物を同等の障害
物として扱った場合、LSI表面上に障害物が存在しな
い領域は数%しか存在しなくなり、論理変更が許される
論理信号配線の全てをこの領域に上記手段で割り当てる
ことは殆ど不可能である。そこで上記障害物を異なるレ
ベルの障害物として扱うことにする。図4に示すように
まず最初に電源配線、電源端子、入出力信号端子等全て
の障害物を考慮して請求項1及び請求項2の処理を行う
。この領域検索時、検索範囲をチップ全領域とするとそ
の領域までの迂回配線長が多大なものとなる恐れがあり
配線ディレイ他幾つかの問題が発生する。これを制限値
に納めるため検索領域には各半導体集積回路の制限に見
合った検索領域を設けてこの範囲で検索を行う。 ここで該当する領域が見つからなかった配線については
次に電源配線を障害物から取り除いて、電源端子、入出
力信号端子を障害物として考慮した請求項1及び請求項
2の処理を行う。電源配線を障害物から取り除くことで
領域は数十%に拡張されるため殆ど全ての配線が条件を
見たすことが可能となり、切欠きを行うことで補修を可
能とすることができる。また上記条件においても条件を
満たすことが出来なかった配線については、配線を上層
に引き上げたり、配線間隔を拡張しても補修することは
困難なためこれら処理は実施しない。これにより配線チ
ャネルの無駄使いを防ぐことができ、配線、スルーホー
ルも減るので初期LSI製造時の歩留まりを低下させる
要因を防止できる。上記実施例ではLSI表面に最も近
い論理配線層へ配線を引き上げることを前提として説明
してきたが、補修装置の加工精度によりもう一層下の層
あるいはさらに下位の層でも補修が容易に可能な場合、
その層への引上げに関しても上記で述べた全てのことが
適用可能なことは容易に理解されよう。
FIG. 1(a) shows a front view of the LSI as seen from above, and FIG. 1(b) shows a cross-sectional view. For example, as shown in Figure 1, LS
A power supply wiring layer, power supply terminals, input/output signal terminals, etc. are present on the surface of I. And below that there are three wiring layers, two layers,
There is one layer. For example, FIB, L by laser CVD
Since SI repair is performed from above the chip, it is easier to process the wiring layer closest to the LSI surface (layer 3 in Figure 1), so a portion of the wiring is raised to layer 3 as shown in Figure 2. . Furthermore, as a measure to prevent contact with adjacent wiring, excessive cutting, etc. during processing, a process is performed in which a part of the wiring is provided with an expanded distance from the adjacent wiring, as shown in FIG. The processing shown in FIGS. 2 and 3 is described in Japanese Patent Laid-Open No. 02-15657. However, in order to actually cut the wiring that has been pulled up to three layers, the power supply wiring, power supply terminals, input/output signal terminals, etc. above the wiring become obstacles. However, the power supply wiring, power supply terminals, and input/output signal terminals do not cover the entire surface.
There are places, such as the point 101 in FIG. 1, where neither exists. If processing is performed from this location, JP-A-63-1
There is no need to cut out the power supply wiring with the FIB as described in No. 57438, and processing can be performed directly. Also, if the only obstacle is the power supply wiring, it can be solved with a cutout, but if there is a power supply terminal or input/output signal terminal above it, the FI
Processing using B becomes difficult, and if all the wiring to be processed is below the power supply terminal, processing will be abandoned, resulting in the problem that logic cannot be changed. In this way, if the processing shown in Figures 2 and 3 is performed at a location that satisfies condition 101 (the wiring layer closest to the LSI surface and where there are no power supply wiring, power supply terminals, or input/output signal terminals in the sky), ,1
00% processing is possible, which has the effect of reducing processing time during processing and improving yield. In this example, power supply wiring, power supply terminals, and input/output signal terminals are used as examples of obstacles, but if there are any other obstacles to processing, it is possible to obtain the same effect by avoiding them. be. Furthermore, as described above, there are obstacles that can be dealt with by cutting out the FIB, and obstacles that are difficult to deal with, such as power supply terminals and input/output signal terminals. If these obstacles are treated as equivalent obstacles, there will be only a few percent of the area on the surface of the LSI where there are no obstacles, and all the logic signal wiring that is allowed to change logic will be allocated to this area using the above method. is almost impossible. Therefore, the above obstacles will be treated as obstacles at different levels. As shown in FIG. 4, first, the processes of claims 1 and 2 are performed taking into account all obstacles such as power supply wiring, power supply terminals, and input/output signal terminals. When searching for this area, if the search range is set to the entire area of the chip, the length of detour wiring to the area may become enormous, causing several problems such as wiring delay. In order to keep this within the limit value, a search area is provided that matches the limitations of each semiconductor integrated circuit, and the search is performed within this range. For the wiring for which a corresponding area is not found, the power supply wiring is then removed from the obstruction, and the processing according to claims 1 and 2 is performed in which the power supply terminal and the input/output signal terminal are taken into consideration as the obstruction. By removing the power supply wiring from obstacles, the area can be expanded by several tens of percent, making it possible for almost all wiring to meet the requirements, and making repairs possible by making notches. Furthermore, for wiring that fails to satisfy the above conditions, these processes are not performed because it is difficult to repair the wiring even if the wiring is pulled up to an upper layer or the wiring spacing is expanded. This prevents wasted use of wiring channels and reduces the number of wiring and through holes, thereby preventing factors that reduce yield during initial LSI manufacturing. The above embodiment has been explained on the premise that the wiring is pulled up to the logic wiring layer closest to the LSI surface, but if the processing accuracy of the repair equipment makes it possible to easily repair the lower layer or even lower layer,
It will be readily understood that all that has been said above is also applicable regarding the pulling up to that layer.

【0017】次に目標とする領域での配線パターンの引
上げ処理アルゴリズムの一例を図5により説明する。ま
ず着目する配線501の上空に条件101を満足する領
域が存在しないか検索する。図5では502の領域が条
件101を満足する領域となる。もし上空に該当する領
域が存在しない場合はその配線の近辺で検索することに
なる。次に配線501が1層配線の場合3層の502の
領域に配線を必要な長さ割り付ける。この時当然引上げ
のため2層を経由する必要があるので2層の配線可能領
域も考慮する必要がある。この例は一旦配線を実施し後
、配線パターンを整形する例であるが、初期配線から考
慮した配線を行うことも可能である。例えば図6に示す
ように端子601,602の配線を行うときこの2点で
形成される領域内603で条件101を満足する領域6
04を検索してそこに3層配線605を優先的に割付け
配線を行えば良い。上記で述べたように従来の自動配線
処理に条件を付加することで請求項1から請求項4まで
の処理を行うことは実現可能である。
Next, an example of an algorithm for lifting a wiring pattern in a target area will be explained with reference to FIG. First, a search is made to see if there is an area above the wiring 501 of interest that satisfies condition 101. In FIG. 5, an area 502 satisfies condition 101. If the corresponding area does not exist in the sky, the search will be performed in the vicinity of the wiring. Next, if the wiring 501 is a one-layer wiring, a required length of wiring is allocated to the area 502 of three layers. At this time, it is necessary to pass through two layers for pulling up, so it is necessary to consider the wiring area of the two layers. Although this example is an example in which the wiring pattern is shaped after the wiring is performed, it is also possible to perform the wiring in consideration of the initial wiring. For example, as shown in FIG. 6, when wiring terminals 601 and 602, a region 603 that satisfies condition 101 is formed by these two points.
04 and preferentially assign and route the third-layer wiring 605 there. As described above, by adding conditions to the conventional automatic wiring process, it is possible to perform the processes of claims 1 to 4.

【0018】以上、本発明によればLSI初期設計時の
配線パターンをLSI表面の補修障害物を考慮して配線
することで、補修加工時間の削減、補修の実現性を向上
させることが可能である。
As described above, according to the present invention, by wiring the wiring pattern during the initial design of the LSI in consideration of repair obstacles on the LSI surface, it is possible to reduce the repair processing time and improve the feasibility of repair. be.

【0019】[0019]

【発明の効果】本発明請求項1及び請求項2によれば、
LSI表面に最も近い論理信号配線層に引き上げられた
論理信号配線パターン及び隣接する配線パターンとの間
にお互いの配線パターンの間隔を拡張する迂回部を設け
た論理信号配線パターンをFIB、レーザCVD等で加
工するとき、その配線の上空に加工の障害物となる電源
端子、入出力端子、電源配線等がないため、障害物を除
去する切り欠き等の加工が不要となり、加工時間の削減
及び切欠きによる歩留まり低下を防止できる効果がある
。さらに障害物により補修を断念するという事態を避け
る効果がある。
Effects of the Invention According to claims 1 and 2 of the present invention,
FIB, laser CVD, etc. are used to create a logic signal wiring pattern in which a detour part is provided between the logic signal wiring pattern pulled up to the logic signal wiring layer closest to the LSI surface and the adjacent wiring pattern to extend the interval between the wiring patterns. When machining, there are no power terminals, input/output terminals, power wiring, etc. that would be obstacles to machining above the wiring, so machining such as notches to remove obstacles is not required, reducing machining time and cutting. This has the effect of preventing a decrease in yield due to chipping. Furthermore, it has the effect of avoiding situations where repairs are abandoned due to obstacles.

【0020】本発明請求項3によれば、電源端子、入出
力端子、電源配線をレベルの異なる障害物として扱うこ
とで、例えば電源端子、入出力端子は100%禁止、電
源配線については該当場所が無い場合にかぎり許可する
とする。これにより条件が緩和され、より多くの配線を
補修可能な配線領域に割り当てることが可能となり、補
修による論理変更の実現可能性が向上する効果がある。
According to claim 3 of the present invention, by treating power terminals, input/output terminals, and power wiring as obstacles of different levels, for example, power terminals, input/output terminals are 100% prohibited, and power wiring is prohibited at the relevant location. It will be allowed only if there is no. This eases the conditions, makes it possible to allocate more wiring to repairable wiring areas, and has the effect of improving the possibility of implementing logic changes through repair.

【0021】本発明請求項4によれば、配線パターンの
引上げ場所、配線パターンの迂回場所の上空に障害物が
存在して補修が不可となる配線については、配線パター
ンの引上げ、配線パターンの迂回処理を行わないことで
余分な配線チャネルを使用して、他の配線の引上げ、迂
回の邪魔をしたり、無駄なスルーホール、パターンを生
成して歩留まりを低下させたりすることが無くなる効果
がある。
According to claim 4 of the present invention, for wiring that cannot be repaired due to the presence of an obstacle in the air above the wiring pattern pulling up place or the wiring pattern detouring place, the wiring pattern can be pulled up or the wiring pattern can be detoured. Not performing this process has the effect of eliminating the use of extra wiring channels that interfere with pulling up and detouring other wiring, and the generation of unnecessary through holes and patterns that reduce yield. .

【図面の簡単な説明】[Brief explanation of the drawing]

【図1】LSIチップの正面及び断面を示す図である。FIG. 1 is a diagram showing a front view and a cross section of an LSI chip.

【図2】配線引上げ図である。FIG. 2 is a wiring diagram.

【図3】隣接配線間隔拡張図である。FIG. 3 is an expanded view of adjacent wiring intervals.

【図4】請求項3の処理フローチャートである。FIG. 4 is a processing flowchart according to claim 3;

【図5】引上げ配線処理方法概要図である。FIG. 5 is a schematic diagram of a pull-up wiring processing method.

【図6】引上げ配線処理方法概要図である。FIG. 6 is a schematic diagram of a pull-up wiring processing method.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】半導体集積回路のチップ製造後、チップ上
でFIB(集束イオンビーム)、レーザCVD(化学気
相成長)等を用いて配線の一部を修正加工して論理変更
に対応する補修を行う際、この加工を容易にするための
チップ製造時の配線方法であって FIB、レーザCVD等での論理変更が許される論理信
号配線パターンをLSI表面に最も近い論理信号配線層
に引き上げておくとき、その配線の上空に加工の障害物
となる電源端子、入出力端子、電源配線等がない場所を
含む配線パターンとなるように引上げ場所を選択して配
線パターンの引上げを行うことを特徴とする半導体集積
回路配線方法。
[Claim 1] After manufacturing a semiconductor integrated circuit chip, a part of the wiring is corrected on the chip using FIB (focused ion beam), laser CVD (chemical vapor deposition), etc. to correspond to logic changes. When carrying out this process, it is a wiring method during chip manufacturing to facilitate this processing, and the logic signal wiring pattern that allows logic changes by FIB, laser CVD, etc. is raised to the logic signal wiring layer closest to the LSI surface. When placing the wiring, the wiring pattern is pulled up by selecting a pulling location so that the wiring pattern includes places where there are no power terminals, input/output terminals, power wiring, etc. that would be obstacles to processing above the wiring. A semiconductor integrated circuit wiring method.
【請求項2】半導体集積回路のチップ製造後、チップ上
でFIB、レーザCVD等を用いて配線の一部を修正加
工して論理変更に対応する補修を行う際、この加工を容
易にするためのチップ製造時の配線方法であってFIB
、レーザCVD等での論理変更が許される論理信号配線
パターンに対して、該配線パターンに隣接する配線パタ
ーンの一部又は該配線パターンの一部にお互いの配線パ
ターンの間隔を拡張する迂回部を設けるとき、この迂回
部の上空に加工の障害物となる電源端子、入出力端子、
電源配線等がない場所を含む迂回部となるよう迂回場所
を選択して、ここで迂回を行うことを特徴とする半導体
集積回路配線方法。
[Claim 2] After manufacturing a semiconductor integrated circuit chip, a part of the wiring on the chip is modified using FIB, laser CVD, etc. to facilitate repair in response to logic changes. FIB is a wiring method during chip manufacturing.
, for a logic signal wiring pattern whose logic is allowed to be changed by laser CVD, etc., a detour part is provided in a part of the wiring pattern adjacent to the wiring pattern or in a part of the wiring pattern to extend the interval between the wiring patterns. When installing, there are power supply terminals, input/output terminals, and
A semiconductor integrated circuit wiring method characterized in that a detour location is selected so as to be a detour section including a location where there is no power supply wiring, etc., and a detour is performed at this detour location.
【請求項3】請求項1の配線パターンの引上げ場所、請
求項2の配線パターン迂回場所選択時の障害物考慮にお
いて、電源配線のようにFIBで加工可能な障害物と電
源端子、入出力端子等加工が極めて困難な障害物を異な
る選択条件としてレベル分けして考慮することを特徴と
する半導体集積回路配線方法。
[Claim 3] Obstacles that can be processed by FIB, such as power supply wiring, power supply terminals, and input/output terminals are considered in consideration of obstacles when selecting the wiring pattern pull-up location in claim 1 and the wiring pattern detour location in claim 2. A semiconductor integrated circuit wiring method characterized in that obstacles that are extremely difficult to process are considered in different levels as different selection conditions.
【請求項4】請求項1の配線パターンの引上げ場所、請
求項2の配線パターン迂回場所選択時、条件を満たす場
所が存在しない配線については補修容易性考慮を目的と
した配線パターンの引上げ、及び配線パターンの迂回は
実施しないことを特徴とする半導体集積回路配線方法。
[Claim 4] When selecting a wiring pattern pulling location as claimed in claim 1 and a wiring pattern detour location as claimed in claim 2, for wiring for which there is no location that satisfies the conditions, the wiring pattern is pulled up for the purpose of considering repairability; A semiconductor integrated circuit wiring method characterized in that a detour of a wiring pattern is not performed.
JP13473391A 1991-06-06 1991-06-06 Method of wiring semiconductor integrated circuit Pending JPH04359542A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13473391A JPH04359542A (en) 1991-06-06 1991-06-06 Method of wiring semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13473391A JPH04359542A (en) 1991-06-06 1991-06-06 Method of wiring semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPH04359542A true JPH04359542A (en) 1992-12-11

Family

ID=15135322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13473391A Pending JPH04359542A (en) 1991-06-06 1991-06-06 Method of wiring semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH04359542A (en)

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