JPH04331781A - Ceramics composite material - Google Patents
Ceramics composite materialInfo
- Publication number
- JPH04331781A JPH04331781A JP32554390A JP32554390A JPH04331781A JP H04331781 A JPH04331781 A JP H04331781A JP 32554390 A JP32554390 A JP 32554390A JP 32554390 A JP32554390 A JP 32554390A JP H04331781 A JPH04331781 A JP H04331781A
- Authority
- JP
- Japan
- Prior art keywords
- plate
- composite
- metal
- copper
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002131 composite material Substances 0.000 title claims abstract description 39
- 239000000919 ceramic Substances 0.000 title claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 239000010949 copper Substances 0.000 claims abstract description 27
- 229910052802 copper Inorganic materials 0.000 claims abstract description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000004020 conductor Substances 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims abstract description 4
- 238000005219 brazing Methods 0.000 claims description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- 239000000843 powder Substances 0.000 abstract description 6
- 238000007650 screen-printing Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- 239000000203 mixture Substances 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 229910000048 titanium hydride Inorganic materials 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- -1 for example Substances 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 2
- 239000011225 non-oxide ceramic Substances 0.000 description 2
- 229910052574 oxide ceramic Inorganic materials 0.000 description 2
- 239000011224 oxide ceramic Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910018404 Al2 O3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910017945 Cu—Ti Inorganic materials 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Laminated Bodies (AREA)
- Ceramic Products (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、セラミックス複合体に関し、さらに詳しく
はセラミックス板と金属板とからなる複合板に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a ceramic composite, and more particularly to a composite plate consisting of a ceramic plate and a metal plate.
従来より、セラミックス板の表及び裏面に金属板を接合
した複合板は、種々提案され、主に電子部品、機械部品
等に広く使用されている。Conventionally, various composite plates in which metal plates are bonded to the front and back surfaces of a ceramic plate have been proposed and are widely used mainly in electronic parts, mechanical parts, and the like.
しかしながら、これら複合板は、例えば電子部品におい
て、表面の金属板はエッチング等により電子回路として
、裏面の金属板は電子回路及び電子材料から発生する熱
の放熱板として使用されているにすぎなかった。However, for example, in electronic parts, these composite plates are used only by etching the front metal plate as an electronic circuit, and by using the back metal plate as a heat dissipation plate for the heat generated from the electronic circuit and electronic materials. .
そこで、本発明者等は鋭意研究を重ねた結果、本発明に
至ったものである。Therefore, the present inventors have conducted extensive research and have arrived at the present invention.
本発明は、従来技術が有していた前述の問題点を解決し
ようとするものであり、従来全く知られていなかった新
規なセラミックス複合体を提供することにある。The present invention aims to solve the above-mentioned problems of the prior art, and aims to provide a novel ceramic composite that has been completely unknown heretofore.
本発明は、前述の問題点を解決すべくなされたものであ
り、セラミックス板の表及び裏面に金属板をそれぞれ接
合してなる複合体において、前記2枚の金属板が部分的
に導電材で導通されていることを特徴とするセラミック
ス複合体を提供するものである。The present invention was made in order to solve the above-mentioned problems, and in a composite body formed by bonding metal plates to the front and back surfaces of a ceramic plate, the two metal plates are partially made of a conductive material. The present invention provides a ceramic composite characterized by being electrically conductive.
しかして、本発明によれば、セラミックス板の表及び裏
面に接合されている金属板は、電子回路及び放熱板とし
て機能する多機能な複合板を得ることができる。以下、
本発明の構成要因について、さらに詳細に説明する。Therefore, according to the present invention, a multifunctional composite plate can be obtained in which the metal plates bonded to the front and back surfaces of the ceramic plate function as an electronic circuit and a heat sink. below,
The constituent factors of the present invention will be explained in more detail.
本発明でいう「セラミックス」とは、特に制限はないが
酸化物系セラミックス及び非酸化物系セラミックスであ
る。酸化物系セラミックスは、例えばアルミナ(Al2
O3)、マグネシヤ(MgO)及びジリコニヤ(ZrO
2)等が挙げられるが、中でもアルミナが好ましい。非
酸化物系セラミックスは、例えば窒化アルミ(AlN)
、炭化珪素(SiC)及び窒化珪素(Si3N4)等が
挙げられるが、中でも窒化アルミ、炭化珪素が好ましく
、特に窒化アルミが好ましい。"Ceramics" as used in the present invention is not particularly limited, but includes oxide ceramics and non-oxide ceramics. Oxide ceramics include, for example, alumina (Al2
O3), magnesia (MgO) and ziriconia (ZrO)
2), among others, alumina is preferred. Examples of non-oxide ceramics include aluminum nitride (AlN)
, silicon carbide (SiC), and silicon nitride (Si3N4), among which aluminum nitride and silicon carbide are preferred, and aluminum nitride is particularly preferred.
また、セラミックス板の板厚は特に規制するものではな
く、いづれの板厚でも良いが一般的には0.2〜1.0
m/m、好ましくは0.3〜0.8m/mである。In addition, the thickness of the ceramic plate is not particularly regulated, and may be any thickness, but generally 0.2 to 1.0
m/m, preferably 0.3 to 0.8 m/m.
本発明でいう「金属」とは、特に制限はないが、銅(C
u)、ニッケル(Ni)、クローム(Cr)コバルト、
アルミニウム(Al)及びこれらの合金等が挙げられる
が、中でも銅(Cu)、ニッケル(Ni)が好ましく、
特に銅及び銅金属を主体とした合金が好ましい。銅金属
としては、例えばJIS H3100で規定する銅金属
が好ましく、中でも無酸素銅(合金番号C1020)が
好ましい。The "metal" used in the present invention is not particularly limited, but copper (C
u), nickel (Ni), chromium (Cr) cobalt,
Examples include aluminum (Al) and alloys thereof, among which copper (Cu) and nickel (Ni) are preferred;
In particular, copper and alloys mainly composed of copper metal are preferred. As the copper metal, for example, copper metal specified by JIS H3100 is preferable, and oxygen-free copper (alloy number C1020) is especially preferable.
また本発明で使用する金属板のうち、後工程でエッチン
グ等により、従来のように電子回路基板として使用され
る金属板(以後、この金属板を「表面金属板(X)」と
いう)の板厚は、セラミックス基板を介して裏面に接合
される金属板(以後この金属板を「裏面金属板(Y)」
という)の板厚は特に制限されるものではなく、いづれ
の板厚でも良いが、Xは一般的に0.05〜0.7m/
m)好ましくは0.1〜0.5m/m、さらに好ましく
は0.15〜0.3m/mであり、Yは一般的には0.
05〜0.6m/m、好ましくは0.1〜0.5m/m
、さらに好ましくは0.15〜0.3m/mである。ま
たXとYの板厚の関係は0.1X≦Y≦1.0X)好ま
しくは0.2X≦Y≦1.0X、さらに好ましくは0.
3X≦Y≦1.0Xであることが望ましい。Among the metal plates used in the present invention, metal plates used as conventional electronic circuit boards (hereinafter referred to as "surface metal plates (X)") are etched in a post-process. The thickness is the metal plate bonded to the back side via the ceramic substrate (hereinafter this metal plate will be referred to as the "back metal plate (Y)").
There is no particular restriction on the thickness of the plate (
m) is preferably 0.1 to 0.5 m/m, more preferably 0.15 to 0.3 m/m, and Y is generally 0.
05-0.6m/m, preferably 0.1-0.5m/m
, more preferably 0.15 to 0.3 m/m. The relationship between the plate thicknesses of X and Y is 0.1X≦Y≦1.0X), preferably 0.2X≦Y≦1.0X, more preferably 0.1X≦Y≦1.0X).
It is desirable that 3X≦Y≦1.0X.
本発明に用いるセラミックス板と金属板との接合方法は
特に制限はないが、例えばセラミックス板と金属板とを
窒素ガスの如き不活性ガス雰囲気か真空雰囲気で加熱し
、金属板とセラミックス板とを直接接合させる方法(直
接々合方法)。又Ti、Zrのような活性金属と低融点
合金を作るAg、Cu、Ni、Sn等の金属を混合又は
合金としたろう材をセラミックス板と金属板の間に介在
させて不活性ガス雰囲気又は真空雰囲気下で加熱圧着す
る方法(活性金属方法)、更にセラミックス板上にメタ
ライズ層をもうけ、このメタライズ層を有するセラミッ
クスと金属板とを金属ソルダーで接合させる方法(メタ
ライズ方法)等があり、中でも直接々合方法及び活性金
属方法が好ましく、特に活性金属方法が好適である。There are no particular limitations on the method of joining the ceramic plate and the metal plate used in the present invention, but for example, the ceramic plate and the metal plate are heated in an inert gas atmosphere such as nitrogen gas or in a vacuum atmosphere to bond the metal plate and the ceramic plate. Direct joining method (direct joining method). In addition, a brazing material made of a mixture or alloy of active metals such as Ti and Zr and metals such as Ag, Cu, Ni, and Sn, which form low melting point alloys, is interposed between the ceramic plate and the metal plate to create an inert gas atmosphere or vacuum atmosphere. There are two methods: a method in which the metallized layer is bonded under heat (active metal method), and a method in which a metallized layer is formed on the ceramic plate and the ceramic with this metallized layer and the metal plate are bonded with a metal solder (metalized method). The active metal method and the active metal method are preferred, with the active metal method being particularly preferred.
本発明に用いる直接々合方法とは、具体的には、例えば
セラミックス板に金属板を載置し、これを加熱炉に入れ
、金属体の過度の酸化を防止するため、酸素濃度を20
ppm以下に調整した不活性雰囲気又は真空雰囲気中で
最高加熱温度1060℃〜1083℃以内の温度で5秒
〜15分間加熱した後、冷却して接合体を得る方法であ
る。また活性金属方法とは、例えばセラミックス板と金
属板との接合面に活性金ろう材を箔状、粉末状、又粉末
をバインダーと均一に混練しペーストとし、これをスク
リーン印刷した後、この接合体を加熱炉に入れ、不活性
雰囲気又は真空度−10−2Torr以下の雰囲気で最
高加熱温度700〜950℃以内の温度で加熱時間3分
〜60分間加熱した後、冷却して接合体を得る方法であ
る。Specifically, the direct bonding method used in the present invention refers to, for example, placing a metal plate on a ceramic plate, placing it in a heating furnace, and reducing the oxygen concentration to 20% to prevent excessive oxidation of the metal body.
This is a method of heating at a maximum heating temperature of 1060° C. to 1083° C. for 5 seconds to 15 minutes in an inert atmosphere or a vacuum atmosphere adjusted to a ppm or less, and then cooling to obtain a bonded body. In addition, the active metal method refers to, for example, applying active gold brazing material in the form of foil or powder to the bonding surface between a ceramic plate and a metal plate, or even kneading the powder with a binder to make a paste, screen printing this, and then bonding. The body is placed in a heating furnace and heated at a maximum heating temperature of 700 to 950°C for 3 to 60 minutes in an inert atmosphere or an atmosphere with a degree of vacuum of -10-2 Torr or less, and then cooled to obtain a bonded body. It's a method.
活性金属ろう材としては特に制限はないが、比較的低温
加熱で接合させることができる、銀(Ag)、銅(Cu
)、チタン(Ti)又は水素化チタン(TiH)の混合
物系、銀(Ag)、銅(Cu)ニッケル(Ni)、チタ
ン(Ti)又は水素化チタン(TiH)の混合物系、銀
(Ag)、銅(Cu)、錫(Sn)、チタン又は水素化
チタン(TiH)の混合物系、銀(Ag)、ニッケル(
Ni)、チタン又は水素化チタンの混合物系及び銀(A
g)、銅(Cu)、ジルコニヤ(Zr)又は水素化ジル
コニヤの混合物系が挙げられるが、中でも銀、銅、チタ
ン又は水素化チタンの混合物系、銀、銅、ニッケル、チ
タン又は水素化チタンの混合物系が好ましい。There are no particular restrictions on the active metal brazing filler metal, but silver (Ag), copper (Cu), which can be joined by heating at a relatively low temperature,
), mixtures of titanium (Ti) or titanium hydride (TiH), silver (Ag), copper (Cu), nickel (Ni), mixtures of titanium (Ti) or titanium hydride (TiH), silver (Ag) , copper (Cu), tin (Sn), titanium or titanium hydride (TiH) mixtures, silver (Ag), nickel (
Ni), titanium or titanium hydride mixture systems, and silver (A
g), a mixture system of copper (Cu), zirconia (Zr) or zirconia hydride, among which a mixture system of silver, copper, titanium or titanium hydride, a mixture system of silver, copper, nickel, titanium or titanium hydride can be mentioned. Mixture systems are preferred.
また、XとYとを導通する方法は、特に制限するもので
はないが、例えば上記のセラミックス板と金属板との接
合時に予めセラミックス板に設定してある貫通孔(スル
ーホール)もしくは、セラミックス板の端部の一部分に
上記ろう材を介在させ、次いで、加熱する方法もしくは
、導線によって直接導通せしめる方法等があり、本発明
においては前者が好ましい。In addition, the method for establishing electrical continuity between X and Y is not particularly limited, but for example, a through hole that is preset in the ceramic plate when joining the ceramic plate and the metal plate, or a through hole in the ceramic plate, There are methods such as interposing the brazing filler metal in a part of the end portion and then heating it, or directly connecting it with a conductive wire, and the former is preferred in the present invention.
このようにして得られたセラミックス板と金属板との複
合板はセラミックス板の表及び裏面に接合されている金
属板(XおよびY)は、それぞれ電子回路及び放熱板と
して機能する多機能な複合板であり、業界へ寄与する所
、極めて大である。The composite plate of a ceramic plate and a metal plate obtained in this way is a multifunctional composite plate that functions as an electronic circuit and a heat sink, respectively. board, and its contribution to the industry is extremely large.
以下実施例により、さらに詳しく説明するが、本発明は
実施例のみに限定されるべきものではないことは言うま
でもない。The present invention will be explained in more detail below with reference to Examples, but it goes without saying that the present invention should not be limited only to the Examples.
実施例A(複合体の調製)
実施例1
JIS H3100、金属番号C1020で規定する2
種類の無酸素銅板(板厚0.3m/mと0.25m/m
、寸法45×30m/m)を用意した。Example A (Preparation of composite) Example 1 2 defined by JIS H3100, metal number C1020
Types of oxygen-free copper plates (plate thickness 0.3m/m and 0.25m/m
, dimensions 45 x 30 m/m) were prepared.
セラミックス板として、アルミナ(Al2O3)板(板
厚0.635m/m、寸法45×30m/m)を用意し
た。An alumina (Al2O3) plate (thickness: 0.635 m/m, dimensions: 45 x 30 m/m) was prepared as a ceramic plate.
このアルミナ板には貫通孔(孔径0.3m/mφ)5個
が予め設置されている。アルミナ板の両面に活性金属粉
ペースト(Ag−Cu−Ti:71.5−27.5−1
)を30μの厚さでスクリーン印刷し、同時に上記貫通
孔内壁部にも上記金属粉ペーストをコートした。Five through holes (hole diameter 0.3 m/mφ) were previously installed in this alumina plate. Active metal powder paste (Ag-Cu-Ti: 71.5-27.5-1) was applied to both sides of the alumina plate.
) was screen printed to a thickness of 30 μm, and at the same time, the inner wall of the through hole was also coated with the metal powder paste.
次いで、上記板厚の異なる2種類の銅板をアルミナ板の
表及び裏面にそれぞれ載置し、1kg/cm2の加圧の
後、10−5Torrの真空条件下、850℃×10分
間加熱した。その後冷却して複合体を得た。次いで、複
合体の表面の銅板(板厚0.3m/m)の表面を研磨し
、パターニング用レジストを印刷し、熱硬化後、塩化第
二銅水溶液に浸漬エッチングし、苛性ソーダ水溶液によ
りレジストを剥離し、パターンを形成した複合体を得、
さらに、この複合体の銅板部を過硫酸アンモニウム水溶
液に浸蝕させ、後に水洗して、パターン処理した複合体
を得た。Next, the two types of copper plates having different thicknesses were respectively placed on the front and back surfaces of the alumina plate, and after pressurizing at 1 kg/cm2, they were heated at 850° C. for 10 minutes under a vacuum condition of 10 −5 Torr. Thereafter, it was cooled to obtain a composite. Next, the surface of the copper plate (plate thickness 0.3 m/m) on the surface of the composite was polished, a patterning resist was printed, and after heat curing, immersion etching was performed in a cupric chloride aqueous solution, and the resist was peeled off with a caustic soda aqueous solution. and obtain a patterned composite,
Further, the copper plate portion of this composite was eroded in an aqueous ammonium persulfate solution and then washed with water to obtain a patterned composite.
ここで得られ複合体の表面に使用した銅板のエッチング
前の面積に対するエッチング後の面積の比は0.7であ
った。The ratio of the area after etching to the area before etching of the copper plate obtained here and used for the surface of the composite was 0.7.
実施例2
実施例1において、アルミナ板の表面に2分割できるよ
うに溝を入れ、貫通孔の数は1孔とし、その中心を上記
溝が通るようにした以外、実施例1と同様にしてパター
ン処理した複合体を得た。Example 2 In Example 1, a groove was made in the surface of the alumina plate so that it could be divided into two parts, the number of through holes was set to 1, and the above groove passed through the center. A patterned composite was obtained.
この複合体は後工程において2分割することにより、複
合体の側面より導通できる複合体となるものである。By dividing this composite into two parts in a subsequent step, it becomes a composite that can be electrically conductive from the sides of the composite.
実施例3
実施例1において、セラミックス板を窒化アルミ(Al
N)とした以外実施例1と同様にして、パターン処理し
た複合板を得た。Example 3 In Example 1, the ceramic plate was made of aluminum nitride (Al
A pattern-treated composite board was obtained in the same manner as in Example 1 except that N).
実施例4
実施例2において、セラミックス板を窒化アルミとした
以外、実施例2と同様にしてパターン処理した複合板を
得た。Example 4 A pattern-treated composite board was obtained in the same manner as in Example 2, except that aluminum nitride was used as the ceramic board.
実施例B(複合体の評価)
実施例Aで得られたパターン化された複合体について、
表及び裏面の銅板間の電気抵抗を測定した結果、いづれ
の複合体の電気抵抗値も零であった。Example B (evaluation of composite) Regarding the patterned composite obtained in Example A,
As a result of measuring the electrical resistance between the front and back copper plates, the electrical resistance value of both composites was zero.
第1〜2図は、本発明による複合体の例を概略的に示
したものであり、第1図は、貫通孔を通して表及び裏面
の金属板が導通されている複合体を、第2図は分割溝を
有する複合体で分割後、複合体の側面より表及び裏面の
金属板が導通されている複合体をそれぞれ示している。
ここで、(a)は複合体の平面図、(b)はA−A及び
B−B線部の断面図、(a′)は分割後の複合体の平面
図である。
また、1はセラミックス板、2は金属板(表面)3は金
属板(裏面)、4は貫通孔、5は金属粉ペースト及び6
は分割用溝を示している。1 and 2 schematically show examples of composites according to the present invention. FIG. 1 shows a composite in which front and back metal plates are electrically connected through through holes, and FIG. 1 and 2 respectively show a composite body having a dividing groove, and after being divided, the front and back metal plates are electrically connected from the side surface of the composite body. Here, (a) is a plan view of the composite, (b) is a sectional view taken along line AA and B-B, and (a') is a plan view of the composite after division. In addition, 1 is a ceramic plate, 2 is a metal plate (front side), 3 is a metal plate (back side), 4 is a through hole, 5 is a metal powder paste, and 6
indicates a dividing groove.
Claims (4)
れぞれ接合してなる複合体において、前記2枚の金属板
が部分的に導電材で導通されていることを特徴とするセ
ラミックス複合体。1. A ceramic composite comprising metal plates bonded to the front and back surfaces of a ceramic plate, wherein the two metal plates are partially electrically connected by a conductive material.
求の範囲第1項記載のセラミックス複合体。2. The ceramic composite according to claim 1, wherein the ceramic is aluminum nitride.
載のセラミックス複合体。3. The ceramic composite according to claim 1, wherein the metal is copper.
の範囲第1項記載のセラミックス複合体。4. The ceramic composite according to claim 1, wherein the conductive material is an active metal brazing material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32554390A JPH04331781A (en) | 1990-11-29 | 1990-11-29 | Ceramics composite material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32554390A JPH04331781A (en) | 1990-11-29 | 1990-11-29 | Ceramics composite material |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04331781A true JPH04331781A (en) | 1992-11-19 |
Family
ID=18178060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP32554390A Pending JPH04331781A (en) | 1990-11-29 | 1990-11-29 | Ceramics composite material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04331781A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006527666A (en) * | 2003-06-16 | 2006-12-07 | キュラミック エレクトロニックス ゲーエムベーハー | Manufacturing method of ceramic metal substrate |
CN110870394A (en) * | 2017-07-04 | 2020-03-06 | 罗杰斯德国有限公司 | Method for producing a via in a carrier layer made of ceramic and carrier layer containing a via |
-
1990
- 1990-11-29 JP JP32554390A patent/JPH04331781A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006527666A (en) * | 2003-06-16 | 2006-12-07 | キュラミック エレクトロニックス ゲーエムベーハー | Manufacturing method of ceramic metal substrate |
CN110870394A (en) * | 2017-07-04 | 2020-03-06 | 罗杰斯德国有限公司 | Method for producing a via in a carrier layer made of ceramic and carrier layer containing a via |
CN110870394B (en) * | 2017-07-04 | 2024-01-16 | 罗杰斯德国有限公司 | Method for producing a via in a carrier layer made of ceramic and carrier layer containing a via |
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