JPH04296724A - Printing method for fine pattern - Google Patents

Abstract

PURPOSE:To suppress a position shift between respective layers, which is caused when the fine pattern is patterned in plural layers on an object substrate, to an extremely small extent by causing the expansion or shrinkage of a printing plate substrate which is as large as those of the printed substrate and shows similar behavior when a heat treatment is performed, and obtaining the same behavior of expansion or shrinkage even at the time of temperature variation in printing. CONSTITUTION:The printing plate substrate is formed of such a material that the expansion/shrinkage behavior of the substrate at the time of a linear expansion coefficient and heat treating process becomes equal to that of the printed body substrate and the same heat treating processes A and B as the heat treating process for the printed body substrate are performed in a printed plate manufacture process in the process up to a pattern printing process is performed for the printing plate substrate in a printing plate manufacturing process.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is used in the field of manufacturing thin film transistor circuits, and more particularly relates to a fine pattern printing method for forming a fine resist pattern on a substrate to be printed by printing.

0002

2. Description of the Related Art Recently, pattern forming methods using printing technology have been widely used for forming resist patterns in the manufacture of thin film transistors and for pattern forming color filters used in liquid crystal televisions.

For example, the present inventors have previously filed a patent application in Japanese Patent Application No. 2-212324 for a method of manufacturing a thin film transistor circuit in which a resist pattern is formed using printing technology.

[0004] This method, for example when an intaglio printing plate is used, is carried out as follows. First, a pattern on which ink is to be left is formed as a concave portion recessed from the surrounding area on the printing plate substrate, and the printing plate substrate on which the pattern is made (hereinafter referred to as
(referred to as a printing plate). Note that a technique such as etching is normally used to form this recess. Next, ink is applied to the recesses of this printing plate, and the surface of the thin film to be processed on the substrate to be printed is brought into contact with the ink-applied surface of this printing plate, and the ink in the recesses is transferred onto the surface of the thin film to be processed. do. Thereafter, the ink is dried and the thin film to be processed is processed by wet or dry etching.

Furthermore, when manufacturing a thin film transistor circuit using the process shown in FIG. 7, for example, patterning is performed four times, and all of these patterning can be performed using the above-described printing.

[0006] As described above, when printing is used to form a resist pattern when manufacturing a thin film transistor circuit, there are great advantages such as being able to form a resist pattern over a large area with one printing.

[0007]

[Problems to be Solved by the Invention] However, in the method of printing a resist pattern in the above method for manufacturing a thin film transistor circuit, a second layer is printed on a pattern on a first layer film formed on a substrate to be printed. When forming a layer film and processing it into a pattern for the second layer, if the patterning is performed according to the original design dimensions, a misalignment will occur between the pattern of the first layer and the pattern of the second layer. It is known. If this deviation becomes large, the structure of the thin film transistor cannot be maintained. Note that although it is possible to design a thin film transistor that operates even if the above-mentioned deviation is large to some extent, the restrictions on the circuit become large and it is difficult to exhibit sufficient characteristics.

The first cause of the above-mentioned deviation is expansion and contraction of the substrate to be printed. This is because the substrate to be printed is subjected to heat treatment when forming the second layer film, and at this time the substrate to be printed expands and contracts and does not return to its original design dimensions even after being cooled. When forming a second layer film on the pattern on the first layer film formed on the print substrate and processing it into a pattern for the second layer, patterning is performed according to the original design dimensions. When done, the pattern of the first layer and the second layer
This is due to the fact that the layer pattern expands and contracts due to the heat treatment applied to the first layer, causing misalignment. Further, as a matter of course, such a shift also occurs during patterning of the third layer or the fourth layer. Note that the step described as heat treatment or heat treatment step herein includes not only the case where the purpose is heat treatment itself but also the case where heating and cooling is performed for the purpose of making the film desirable in its characteristics when forming a film.

The second problem is the expansion and contraction of the printing plate substrate. Currently, printing plate substrates used for lithographic printing plates, intaglio printing plates, and letterpress printing plates are generally made of metals such as aluminum, iron, copper, and zinc, which have linear expansion coefficients of 10 to 3.
Since it is 0 ppm/°C, a temperature change of 1°C causes expansion and contraction of about 10 μm. For this reason, even if the pattern on the original plate is formed accurately according to the designed dimensions, a fairly large positional shift will occur unless temperature control during the plate making process and the printing process is extremely strict. Furthermore, if the linear expansion coefficients of the printing plate substrate and the printing target substrate are different, a change in temperature during printing will cause positional deviation.

On the other hand, methods that can be easily considered to prevent the occurrence of positional deviations as described above include (1) adjusting the pattern dimensions of each layer to match the expansion and contraction of the substrate to be printed or the printing plate substrate; (2) Examine the cooling conditions after heating the printing substrate to avoid expansion and contraction as much as possible; (3) At the time of printing, the printing plate substrate on which the printing substrate or pattern has been made ( Methods such as heating or cooling the printing plate (hereinafter referred to as a printing plate) to cause expansion and contraction have been considered. However, method (1) is extremely inefficient as it is necessary to re-design the pattern every time the manufacturing process is changed, and method (2) has the problem of reduced throughput.
Regarding method 4), for example, when the substrate to be printed is made of glass, the shrinkage of the glass plate is not isotropic, and the temperature control range is narrow, making control itself difficult.

The expansion and contraction of the above pattern will be explained based on FIG. 7. In step (b), the polysilicon thin film is patterned. Next, in step (c), a thin film (SiO2 and polysilicon) is formed, and at this time the substrate undergoes a heating->cooling step. As a result, the glass substrate does not return to its original size even after cooling, and the pattern on it also expands and contracts. Then (d
) In the process, gate patterning is performed, but its position must be in a certain positional relationship with the pattern of the polysilicon thin film. However, if the pattern of the polysilicon thin film expands and contracts as described above, even if the gate pattern is formed according to the designed dimensions, the positional relationship between the two patterns will not be as designed, and the thin film transistor will no longer function.

The present invention was made in view of the above circumstances, and
When manufacturing a thin film transistor circuit using a pattern forming method by printing, the purpose is to minimize the positional misalignment between each layer that occurs when patterning a fine pattern over multiple layers on a printed substrate.

[0013]

[Means for Solving the Problems] The above-mentioned problems are a plate-making process for making a printing pattern on a printing plate substrate, and a pattern printing process for transferring the printing pattern on the printing plate substrate after this plate-making process onto a printing target substrate. In the method for producing a fine pattern, the printing plate substrate is made of a material such that the linear expansion coefficient and expansion/contraction behavior of the substrate when subjected to a heat treatment process are equal to that of the substrate to be printed. This can be solved by applying the same heat treatment process to the printing plate substrate before and after the plate making process as that applied to the printing target substrate in the process up to the pattern printing process.

[0014] Further, the material constituting the printing plate substrate and the substrate to be printed is glass, and in the step of plate making on the printing plate substrate, the printing pattern is formed in the recesses of the printing plate substrate. It is desirable to include any one of the following steps: forming a convex portion, or forming a flat portion.

In the method for printing a fine pattern according to claim 2, the ink receiving layer and the ink repellent layer formed on the glass printing plate substrate are both metal layers and can withstand high heat treatment temperatures. It is preferable to use a printing plate that can be used.

[0016]

[Operation] In the method for printing a fine pattern according to the present invention, the printing plate substrate is made of a material whose coefficient of linear expansion and expansion/contraction behavior during the heat treatment process are comparable to those of the substrate to be printed. A configuration in which a printing plate substrate produced in the above is used, and a heat treatment process similar to the heat treatment process applied to the printing substrate in the process before the pattern printing process is applied to the printing plate substrate before and after the plate making process. Therefore, the degree of expansion and contraction that occurs in the printing target substrate when subjected to the heat treatment process matches the degree of expansion and contraction that occurs in the printing plate substrate. Further, even if the temperature during printing changes, the printing plate substrate and the printing target substrate expand and contract in the same way, so no positional shift occurs. Therefore, when patterning a fine pattern over a plurality of layers on a printing plate, misalignment between each layer can be suppressed within an allowable range. For example, when formed on the display panel surface of a liquid crystal display using low-expansion glass, the positional shift of the thin film transistor pattern due to the expansion and contraction of the glass substrate and printing plate at a diagonal size of 20 inches is reduced by 2.
It can be kept within μm or less.

The fine pattern printing method of the present invention will be explained in detail below by way of example. First, as a first example, an example using an intaglio printing plate will be shown. As shown in FIG. 1, the fine pattern printing method of this example includes a heat treatment step A in which a printing plate substrate is subjected to a first heat treatment, a pattern forming step in which a pattern is made on the printing surface of the printing plate substrate, and a pattern forming process. A process for producing a printing plate consisting of a heat treatment step B in which the plate-made printing plate substrate (printing plate) is subjected to a second heat treatment, and a process thin film forming process in which a thin film to be processed is formed on the substrate to be printed. Process (2) for producing a printing plate consisting of the following steps: Supplying ink to the recesses on the printing plate produced through process (2) and applying the coating on the printing plate substrate of the printing plate produced through process (2). A photoresist is coated on the processed thin film, and when this photoresist coat is in a semi-dry state, it is overlapped with the printing surface of the printing plate prepared earlier, and
It consists of the above three processes: pattern printing process (2), in which the ink is softened by heating to about 0.degree. C. and the pattern on the printing surface of the printing plate is transferred to the photoresist on the surface of the substrate to be printed;

In the above process (2), a printing plate is prepared. When selecting the material for the printing plate substrate used at this time, the most important thing is to select a material whose coefficient of linear expansion and expansion/contraction behavior of the printing plate substrate during the heat treatment process are comparable to those of the substrate to be printed. is to choose. Therefore, it is most preferable to make the printing plate and the substrate to be printed using the same material. For example, when forming a thin film transistor circuit on the display panel of a liquid crystal display, non-alkaline low expansion glass is used as the substrate to be printed. If the printing plate substrate is also made of non-alkali low expansion glass, it is advisable to use a non-alkali low expansion glass.

Furthermore, in this process, a pattern is formed on the printing plate substrate using, for example, the following etching method. First, as shown in FIG. 2(a), a film of metal such as chromium is formed on the surface of the printing plate substrate 11 using a sputtering method or the like on the printing plate substrate 11 which has been subjected to the heat treatment step A of process (2) in FIG. A thin film layer 12 is formed. Furthermore, a photoresist 13 is laminated on this thin film layer 12,
Subsequently, the original plate 13a is exposed and developed on this photoresist. Next, as shown in FIG. 2(b), the thin film layer 12 on the printing plate substrate 11 where the photoresist 13 is not formed is etched using a chrome etching solution, and then as shown in FIG. 2(c). As shown, the exposed portion of the glass layer that was etched in the etching operation of the thin film layer 12 is etched to a predetermined depth using a hydrofluoric acid-based glass etching solution or the like. After this, as shown in FIG. 2(d), the resist 13 and thin film layer 1 on the printing plate substrate 11 are removed.
After peeling off and removing 2, heat treatment is performed under the same conditions as the heat treatment conditions in the operation of forming a thin film to be processed on the substrate to be printed in the printing plate manufacturing process (2).

Note that this heat treatment method will be explained based on FIG. 7. When producing a printing plate for performing gate patterning, which is the step (d) in FIG. 7, first the printing plate substrate 1 is
1 is subjected to the same heat treatment process as the process in FIG. 7(a). Next, a gate pattern is formed using a plate making method suitable for each plate type. Thereafter, it is subjected to the same heat treatment process as the process in FIG. 7(c). In addition, when producing a printing plate for performing electrode patterning in FIG. 7(h), the printing plate substrate 11 is subjected to the same heat treatment process as in the step of FIG. 7(a), then an electrode pattern is formed, and then The same heat treatment as in FIGS. 7(c), (e), and (g) is sequentially performed. As a result, a printing plate 11a having a concave pattern 14 formed on the printing plate substrate 11 is manufactured.

In the above process (2), a printing plate on which the pattern 14 is to be formed is prepared. For example, in the process shown in FIG. 7(c), a SiO2 thin film is first formed on a printing substrate 15 made of the same material and having the same size as the printing plate substrate 11 used in the above process (1). Next, a film of amorphous silicon (hereinafter abbreviated as a-Si) is formed. This was further processed at about 580 to 620°C for about 10 hours to cause solid phase growth of a-Si onto polysilicon (hereinafter abbreviated as p-Si), resulting in a covered film as shown in Figure 3. A processed thin film layer 15a is formed.

In the above process (2), as shown in FIG.
Ink 16 is supplied. On the other hand, on the thin film layer 15a to be processed of the printing plate produced in process (2), there is a photoresist 1
7, and when this photoresist coat 17 is semi-dry, it is overlapped with the ink-coated surface of the printing plate 11a prepared previously (FIG. 4(b)). Furthermore, the overlapping printing plate 11a and printing plate are heated to ink 1.
6 is softened and the surface opposite to the surface of the printing plate substrate 11 of the printing plate is pressed (FIG. 4(c)), and the ink (pattern 14) in the recesses A of the printing plate 11a is transferred to the printing plate. It is transferred onto a photoresist 17 (FIG. 4(d)). The ink used at this time is preferably, for example, a printing ink in which carbon black is mixed into a melamine-based thermosetting resin and has ultraviolet blocking properties, or a printing ink whose main component is a UV-curable acrylic resin.

When the above-mentioned printing ink having ultraviolet blocking properties is used, the photoresist is exposed to ultraviolet light and developed using an ultra-high pressure mercury lamp or the like from the ink layer side of the printing plate on which the pattern has been transferred to the photoresist 17. Figure 5
Do as in (a). Next, the thin film layer 15a to be processed is etched (FIG. 5(b)), and the ink and photoresist are further peeled off (FIG. 5(c)). In this way, patterning of the thin film layer 15a to be processed is completed.

In the above explanation, a method of patterning a type of thin film by etching has been described, but circuit elements such as thin film transistor circuits usually require patterning from 4 times to about 10 times. In addition, when carrying out this plurality of patterning, if a heat treatment is performed on the substrate to be printed, the heat treatment is also performed on the printing plate substrate under the same conditions as described above.

[0025] Although this example shows an example in which an intaglio printing plate is used to form a resist pattern, even if the printing plate for forming this resist pattern is a letterpress printing plate or a planographic printing plate. good. In addition, photoresist
It is suitable when the printing plate is an intaglio plate, but it is not necessary when the printing plate is a letterpress plate or a planographic plate. In that case, the printing ink itself becomes the etching resist material.

In the fine pattern printing method of this example, when selecting the material of the printing plate substrate, it is selected so that the expansion and contraction behavior of the printing plate substrate during the heat treatment process is similar to that of the substrate to be printed. Select a suitable material, and before and after forming a pattern on the printing substrate, heat-treat the printing plate substrate under the same conditions as the heat treatment conditions used in the operation of forming a thin film on the printing substrate. Since the configuration is such that a heat treatment step is performed, the printing plate substrate also undergoes expansion and contraction that exhibits the same behavior as the expansion and contraction that occurs in the printing substrate when this heat treatment step is performed. Furthermore, the expansion and contraction of the printing plate substrate and the substrate to be printed are the same with respect to temperature changes during printing. Therefore, it has become possible to minimize the positional deviation between layers that occurs when fine patterns are patterned over a plurality of layers on a substrate to be printed.

Next, a second example using an intaglio printing plate will be shown. FIG. 6 is a diagram for explaining the fine pattern printing method of this example. The printing plate substrate 21 is made of a material whose linear expansion coefficient and the expansion/contraction behavior of the printing plate substrate 21 during the heat treatment process are similar to those of the printing target substrate 15, as in the first example described above. It is necessary to choose. Therefore, it is most preferable that the printing plate substrate 21 and the printing target substrate 15 are made of exactly the same material.

The difference between this example and the first example is that a plating layer forming step is provided to form a plurality of plating layers on the surface of the printing plate substrate 21, and the ink receiving layer and ink repellent layer during printing are All of the layers are metal layers. Specifically, first, a nickel layer 22 with a thickness of about 3 μm is formed using an electroless plating method or the like (see FIG. 6(a)).
), and further heated at 230 to 270° C. for about one hour in order to improve the adhesion between the printing plate substrate 21 and the nickel layer 22. Next, a copper layer 23 with a thickness of approximately 5 μm is formed on the nickel layer 22 using a copper sulfate plating solution or the like (Fig. 6
(b)), and further, a chromium layer 24 with a thickness of approximately 1 μm is formed on the copper layer 23 using electroplating or the like (FIG. 6(c)).
)).

Next, a photoresist 25 is coated on the chromium layer 24, and a pattern 26 is exposed to light on the photoresist 25.
develop. Next, using a cerium-based chromium etching solution, the chromium layer 24 in the portion of the printing plate substrate 21 where the photoresist 25 is not formed is removed from the copper layer 23 below.
After etching is carried out to the extent that is exposed (FIG. 6(d)), and the photoresist 25 on the printing plate substrate 21 is peeled off, heat treatment is performed. Note that this heat treatment method will be explained based on FIG. 7. When producing a printing plate for performing gate patterning in the step of FIG. 7(d), the printing plate substrate 21 is first subjected to the same heat treatment step as the step of FIG. 7(a). Next, a gate pattern is formed using a plate making method suitable for each plate type. Thereafter, it is subjected to the same heat treatment process as the process in FIG. 7(c). In addition, when preparing a printing plate for performing electrode patterning as shown in FIG. 7(h), the printing plate substrate 21 is
Next, an electrode pattern is formed through the same heat treatment process as in step a), and then the same heat treatment as shown in FIGS. 7(c), (e), and (g) is sequentially performed. In this way, the printing plate 21A with the pattern 26 formed on the printing plate substrate 21 is produced (
Figure 6(e)). The printing plate 21A is preferably washed with dilute sulfuric acid, further dried, and then treated with a tinctor to improve the ink receptivity of the copper surface. By the above operation, the ink receiving layer of the printing plate 21A is formed of copper, and the ink repellent layer is formed of chromium.

Next, using the printing plate 21A produced by the above-described operation, a pattern printing process (2) is performed in which a pattern is printed on the same printing substrate as used in the first example. is the same as the first example described above.

In the fine pattern printing method of this example, when selecting the material for the printing plate substrate, the linear expansion coefficient and expansion/contraction behavior of the printing plate substrate during the heat treatment process are the same as those of the substrate to be printed. A heat treatment process is performed in which the intaglio substrate is heat-treated under the same conditions as the heat treatment conditions used in the operation of forming a thin film to be processed on the substrate to be printed when producing a thin film transistor substrate. With this configuration, the same effect as the previous example can be obtained. Furthermore, since the ink receiving layer of the printing plate 21A was made of copper and the ink repellent layer was made of chromium, the printing plate 21A had a structure that could withstand subsequent heat treatment.

[0032]

【Example】

(Example 1) Of the two examples mentioned above, the first example was carried out. Thickness of surface polished as printing plate substrate ×
A low expansion glass manufactured by Corning (product number 7059) with length x width = 1.1 x 400 x 600 mm was used and subjected to the heat treatment in the step of FIG. 7(a). A layer thickness of 100 mm is applied to the surface of this printing plate substrate.
A 0 angstrom thick chromium layer was formed by sputtering. Next, a photoresist (TOKYO OHKA, OMR-85) was coated on this chromium layer, and a test pattern was exposed and developed thereon.

Next, the chromium layer on the printing plate substrate where the resist was not formed was etched using a cerium-based chromium etching solution. Further, this printing plate substrate was washed with water and dried, and the portion where the glass layer was exposed by etching in the etching operation of the chromium layer was etched using a hydrofluoric acid-based glass etching solution to a depth of 2 μm.
It was etched up to. Thereafter, the resist and chromium layer on the printing plate substrate were peeled off, and then the same heat treatment as in the step of FIG. 7(c) was performed to produce a printing plate in which a pattern was etched on the printing plate substrate. Furthermore, a silicone-based mold release agent was applied to the entire surface of this printing plate.

[0034] Next, a printing ink having ultraviolet blocking properties and made by mixing carbon black with a melamine-based thermosetting resin was supplied to the recesses formed by the above etching operation on the printing plate.

On the other hand, the substrate to be printed on which the thin film transistor is formed has a thickness of 1.1 m, similar to the above-mentioned printing plate substrate.
A low expansion glass manufactured by Corning Co., Ltd. (product number 7059) was used. Regarding the printing substrate that has been completed up to the step of FIG. 7(b), SiO2 and p-Si are
A thin film was formed to prepare a printing plate. Next, a photoresist is coated on the p-Si of this printing plate, and when this photoresist coat is in a semi-dry state, it is overlapped with the ink-coated surface of the printing plate prepared earlier, and heated to 80°C. The ink was softened by heating, and the surface of the printing plate opposite to the overlapping surface with the printing plate was evenly pressed with a roll to transfer the ink (pattern) on the printing plate to the photoresist of the printing plate. Next, an ultra-high pressure mercury lamp was used to irradiate ultraviolet rays from the ink layer side of the printing plate with the pattern transferred to the photoresist, thereby exposing and developing the photoresist. Next, the p-Si film on the printing target substrate was etched using CF4+3% O2 gas, and the ink and photoresist were peeled off.

A gate pattern was patterned on the p-Si film on the substrate to be printed using the fine pattern printing method according to the present embodiment described above. The positional deviation with respect to the pattern formed in the step of FIG. 7(b) was 2 μm at most.

(Example 2) Of the two examples mentioned above, the second example was carried out. As in the first example described above, the thickness of the printing plate substrate whose surface is polished x length x width = 1.
A 3 μm thick nickel layer was formed on the surface of the printing plate substrate using an electroless plating method using a 1×400×600 mm low-expansion glass manufactured by Corning (product number 7059). Next, a copper layer with a thickness of about 5 μm was formed on the nickel layer using a copper sulfate plating solution, and a chromium layer with a thickness of 1 μm was further formed on the copper layer using an electroplating method. Next, a photoresist (Tokyo Ohka, OMR-85) was applied on the chromium layer.
), and a pattern was exposed and developed. Next, using a cerium-based chromium etching solution, the chromium layer on the printing plate substrate where no resist was formed was etched to the extent that the underlying copper layer was exposed. Next, heat treatment was performed in the same manner as in Example 1. The printing plate thus prepared was washed with dilute sulfuric acid, further dried, and treated with tinctor to improve the ink receptivity of the copper surface.

Next, using the printing plate prepared by the above-described operation, a pattern was printed on the printing plate in the same manner as in Example 1 above.

Further, in the same manner as in Example 1, a gate pattern was patterned on the p-Si film on the substrate to be printed, and as shown in FIG.
When the positional deviation with respect to the pattern formed in step (b) was measured, it was 2 μm at most.

[0040]

As described above, in the fine pattern printing method of this example, the linear expansion coefficient and expansion/contraction behavior of the printing plate substrate during the heat treatment process are different from those of the printing plate substrate. A printing plate substrate made of the same material as the substrate is used, and the same heat treatment process as that applied to the printing substrate in the process before the pattern printing process is applied before and after the plate making process. Since this heat treatment process is applied to the printing plate substrate, the printing plate substrate undergoes expansion and contraction to the same extent and with the same behavior as the expansion and contraction that occurs in the printing substrate when this heat treatment process is applied. Misalignment between the plate substrate and the substrate to be printed can be made extremely small. In addition, by using materials for the printing plate substrate and the printing material substrate that have the same coefficient of linear expansion and similar expansion and contraction behavior during the heat treatment process, they can withstand temperature changes during printing. The expansion and contraction behavior will be the same. Therefore, various constraints on thin film transistor circuit design due to large positional deviations are eliminated, and circuit characteristics can be improved.

[Brief explanation of drawings]

FIG. 1: A first method of printing a fine pattern according to the present invention.
It is a figure showing an outline of a manufacturing process in an example.

FIG. 2: First method of printing a fine pattern according to the present invention.
FIG. 2 is a diagram for explaining process (2) in the example of FIG.

FIG. 3: First method of printing a fine pattern according to the present invention.
FIG. 2 is a diagram showing a printing plate produced by process (2) in the example of FIG.

FIG. 4: First method of printing a fine pattern according to the present invention.
FIG. 2 is a diagram for explaining process (2) in the example of FIG.

FIG. 5 is a diagram for explaining the etching step of process (2).

FIG. 6: Second fine pattern printing method according to the present invention.
FIG. 2 is a diagram for explaining an example.

FIG. 7 is a diagram showing an example of a manufacturing process of a thin film transistor circuit.

[Explanation of symbols]

11 Printing plate substrate 11a printing version 14 Pattern 15 Printed substrate 16 Ink pattern 21 Printing plate substrate 21A printing version 23 Copper layer 24 Chromium layer

Claims (3)

[Claims] 1. Manufacturing of a fine pattern, comprising a plate making process of making a printing pattern on a printing plate substrate, and a pattern printing process of transferring the printed pattern on the printing plate substrate after this plate making process onto a printing target substrate. In the method, as the printing plate substrate, a printing plate substrate made of a material whose linear expansion coefficient and expansion/contraction behavior during the heat treatment process are equal to that of the substrate to be printed, and the pattern printing process is performed. A method for printing fine patterns, characterized in that the same heat treatment process as that applied to the substrate to be printed in the previous steps is performed on the printing plate substrate before and after the plate making process. 2. The material constituting the printing plate substrate and the substrate to be printed is glass, and in the step of plate making the printing plate substrate, the printing pattern is formed in the recessed portion of the printing plate substrate. 2. The method for printing a fine pattern according to claim 1, further comprising one of the following steps: forming a micropattern on a convex portion, or forming on a flat portion. . 3. The method for printing fine patterns according to claim 2, characterized in that a printing plate is used in which the ink receiving layer and the ink repellent layer formed on the glass printing plate substrate are both metal layers. A method for printing fine patterns.