CN113219782A - Method for manufacturing photomask, photomask and method for manufacturing display device - Google Patents
Method for manufacturing photomask, photomask and method for manufacturing display device Download PDFInfo
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- CN113219782A CN113219782A CN202110480246.3A CN202110480246A CN113219782A CN 113219782 A CN113219782 A CN 113219782A CN 202110480246 A CN202110480246 A CN 202110480246A CN 113219782 A CN113219782 A CN 113219782A
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
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- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
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Abstract
The invention provides a method for manufacturing a photomask, a photomask and a method for manufacturing a display device, wherein the photomask has higher CD precision and transmittance precision. The solution of the present invention is a method for manufacturing a photomask, wherein a transparent substrate is provided with a transfer pattern including a light transmission part, a 1 st transmission control part and a 2 nd transmission control part. The manufacturing method includes: preparing a photomask blank having a 1 st thin film having a predetermined exposure light transmittance formed on a transparent substrate; a 1 st patterning step of etching the 1 st thin film to form a 1 st thin film pattern; and a 2 nd patterning step of forming a 2 nd thin film on the transparent substrate on which the 1 st thin film pattern is formed, and etching the 2 nd thin film to form a 2 nd thin film pattern. In the 2 nd patterning step, only the 2 nd thin film is etched.
Description
The present application is filed by divisional application, and has application number 201610851465.7, application date 2016, 9, 26, entitled "method for manufacturing photomask, and method for manufacturing display device".
Technical Field
The present invention relates to a multi-tone photomask useful for manufacturing a display device represented by a liquid crystal panel or an organic EL panel, a method for manufacturing the same, and a method for manufacturing a display device using the multi-tone photomask.
Background
In recent years, further miniaturization has been demanded for display devices represented by liquid crystal panels and organic EL panels, and the trend toward miniaturization in the patterns of photomasks used for manufacturing these devices has also become remarkable. In particular, the reason why miniaturization of a display device is desired is not only the improvement of image quality such as an increase in pixel density, an increase in brightness of a display, and an increase in response speed, but also advantageous from the viewpoint of energy saving. With such a trend toward miniaturization, the quality of the photomask is also required to be improved.
A multi-tone mask (multi-tone mask) having a transfer pattern formed by patterning a light-shielding film and a semi-light-transmitting film formed on a transparent substrate is known in the related art. The multi-tone photomask is usefully used for manufacturing a display device or the like.
For example, patent document 1 listed below describes a halftone film type multi-tone mask and a method for manufacturing the same.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open No. 2005-257712
Disclosure of Invention
Problems to be solved by the invention
The multi-tone photomask is a photomask having a transfer pattern including 3 or more portions having different light transmittances, such as a light-shielding portion, a light-transmitting portion, and a semi-light-transmitting portion, and thereby forming a resist pattern having a plurality of residual film thicknesses on a transfer target. The resist pattern is sometimes used as an etching mask for processing a thin film formed on a transfer target. In this case, by performing the 2 nd etching by removing the resist pattern in succession to the 1 st etching, the resist pattern functions as an etching mask having a different shape in the 1 st etching and the 2 nd etching. Therefore, the multi-tone photomask may be referred to as a photomask having functions equivalent to those of a multi-piece photomask. Therefore, the photomask mainly capable of reducing the number of photomasks required for manufacturing the display device contributes to improvement of production efficiency.
The multi-tone photomask has a translucent portion using a translucent film that partially transmits exposure light, in addition to the light shielding portion and the translucent portion. By appropriately controlling the light transmittance of the semi-transmissive portion, the phase characteristics with respect to the transmitted light, and the like, the local thickness of the resist pattern formed on the object to be transferred, the cross-sectional shape thereof, and the like can be changed.
The multi-tone photomask of patent document 1 has a transfer pattern in which a plurality of patterned films (a light-shielding film, a semi-light-transmitting film, and the like) are laminated. The following advantages are provided for such a multi-gray scale photomask: by setting desired transmittance and phase characteristics for light used in exposure, selecting a film material and a film thickness suitable for the transmittance and phase characteristics, and adjusting film formation conditions, a multi-tone photomask having desired optical characteristics can be designed.
Here, a method described in patent document 1 as a conventional technique will be described.
In the method described in patent document 1, the multi-tone mask 200 shown in fig. 3(i) is manufactured through the process described in fig. 3. Specifically, first, a light-shielding film 102 is formed on a transparent substrate 101, a positive resist is applied thereon, and a resist film 103 is formed, thereby preparing a photomask blank 100 (see fig. 3 (a)).
Then, it is drawn using a laser drawing machine or the like (drawing 1 st), and developed. Thereby, the resist film is removed in the region where the translucent portion is formed (region a in fig. 3). As a result, a resist pattern 103a (see fig. 3B) in which a resist film remains in a region where the light-shielding portion is formed (region B in fig. 3) and a region where the light-transmitting portion is formed (region C in fig. 3) is formed.
Next, the light-shielding film 102 is etched (1 st etching) using the formed resist pattern 103a as a mask, and a light-shielding film pattern 102a is formed in a region corresponding to the light-shielding portion (region B) and the light-transmitting portion (region C) (see fig. 3C). Then, the resist pattern 103a is removed (see fig. 3 d).
The 1 st photolithography step described above defines a region (a region) corresponding to the semi-transmissive portion.
Next, a semi-light-transmitting film 104 is formed on the entire surface of the substrate with the light-shielding film pattern obtained above (see fig. 3 (e)). Thereby, the translucent portion of the a region is formed.
Further, a positive resist is applied to the entire surface of the semi-transmissive film 104 to form a resist film 105 (see fig. 3 f), and drawing is performed (fig. 2). After the development, the resist film 105 is removed from the light-transmitting portion (region C), and a resist pattern 105a in which the resist film remains in the light-shielding portion (region B) and the semi-light-transmitting portion (region a) is formed (see fig. 3 g).
Using this as a mask, the semi-light-transmitting film 104 and the light-shielding film pattern 102a in the region C which is a light-transmitting portion are etched (etching No. 2) and removed (see fig. 3 (h)). Here, since the half light-transmitting film and the light-shielding film have the same or similar etching characteristics, etching can be performed continuously. Then, after the 2 nd etching, the resist pattern 105a is removed, and the multi-tone photomask 200 is completed (see fig. 3 (i)).
By the above-described method, the light-shielding film and the semi-light-transmitting film were patterned by 2 photolithography steps (drawing, development, and etching), respectively, to manufacture a multi-tone mask having a light-shielding portion, a light-transmitting portion, and a semi-light-transmitting portion.
In a display device equipped with a liquid crystal or an organic EL, there is a demand for an improvement in technology from the viewpoints of image brightness, resolution, response speed, reduction in power consumption, reduction in cost, and the like. In this case, the photomask used for manufacturing these display devices is also required to have a function of not only forming a fine pattern more finely than the conventional one but also transferring the pattern to a transfer object (such as a panel substrate) at low cost. In addition, the design of the required transfer pattern is diversified and complicated.
Under such circumstances, the present inventors have found the following new problems through their studies.
According to the process of patent document 1, in the 2 nd etching, 2 films, i.e., a semi-light-transmissive film and a light-shielding film, are continuously etched and removed in 1 step (see fig. 3 (h)). Here, for example, the light-shielding film is a film containing chromium as a main component, and the semi-light-transmitting film is a film containing a chromium compound. The time required for etching the former light-shielding film is X (e.g., 50 seconds), and the time required for etching the latter semi-transparent film is Y (e.g., 10 seconds). In this case, the etching time of X + Y (for example, 60 seconds) is required in the 2 nd etching, and a longer time is required than in the case of etching a single light-shielding film or semi-light-transmitting film.
Here, wet etching is applied as an etching method. The reason is that wet etching can be very advantageously applied to a photomask for display device fabrication. This is because wet etching is very advantageous in terms of equipment and efficiency compared to dry etching that requires a vacuum apparatus, in a photomask for manufacturing a display device having a substrate with a large area (for example, 300mm or more on a side) and various sizes.
In addition, wet etching has a strong isotropic etching property, and performs etching not only in the depth direction of the film to be etched but also in a direction parallel to the film surface to be etched (side etching). In general, when a long etching time is required, the in-plane variation of the etching amount tends to be large, and therefore, as the wet etching time is prolonged, the side etching amount increases, and the in-plane variation of the amount also increases. Therefore, when 2 kinds of films, i.e., the semi-light-transmitting film and the light-shielding film, are continuously etched and removed in 1 step by the above-described 2 nd etching, the line width or Dimension (CD: Critical Dimension, hereinafter used in the meaning of line width or Dimension of a pattern) accuracy of the formed transfer pattern is easily deteriorated. That is, the 2 nd etching which requires X + Y (seconds) has a problem in this point. In addition, the amount of etchant used increases with the increase in etching time, and the burden of treatment of waste liquid containing heavy metals increases.
In addition, the present inventors have found that the following problems may also arise in the case where the design of a pattern for transfer is complicated or a pattern having a fine size (CD).
In fig. 3(i) showing the method of patent document 1, a pattern including a portion where the translucent portion and the light shielding portion are adjacent to each other is formed, but in addition to such a pattern, a more complicated pattern is included in a pattern for transfer of a recent photomask for manufacturing a display device. For example, a transfer pattern or the like having a portion where the translucent portion and the semi-translucent portion are adjacent to each other in addition to the adjacent portion described above is required.
Therefore, for example, a case where the transfer pattern shown in fig. 3 further includes a portion where the translucent portion and the semi-translucent portion are adjacent to each other is considered (see fig. 4 (i)). The steps (2 nd photolithography step) in fig. 4(f) to (i) correspond to those in fig. 3(f) to (i), respectively.
Here, in the step of fig. 4(h) showing the 2 nd etching, there is a portion (N) where the semi-transmissive film 104 and the light-shielding film pattern 102a are continuously etched and removed, as in the step of fig. 3 (h). Therefore, the etching time is prolonged due to the large etching depth, and the amount of side etching is increased according to the etching depth. As a result, the formed pattern size (CD) is likely to vary, and the in-plane CD error distribution is also likely to increase (see fig. 4 (h')).
In addition, in the step of fig. 4(h), a portion (N) where the semi-transmissive film 104 and the light shielding film pattern 102a described above are continuously etched away and a portion (K) where only the semi-transmissive film 104 is etched away are generated. In this case, it is difficult to set the time required for the 2 nd etching. This is because, when the etching time of T (seconds) is required for the latter part (K), the etching time corresponding to T + α (seconds) is required for the former part N.
Therefore, in the step of fig. 4(h), when etching of the N portion is actually completed, etching is excessively performed in the K portion, and the semi-transparent film 104 under the resist pattern 105a is side-etched (see fig. 4 (h')). As a result, the size of the formed semi-transmissive film pattern 104a is reduced by W (μm) in the portion K with respect to the size of the resist pattern 105a, and the pattern size (CD) varies, so that the distribution of the in-plane CD errors is likely to increase (see fig. 4 (i')).
In addition, the control of light transmittance is very important for the semi-transparent film used in such a multi-tone photomask, and in the method of the related art of fig. 3, a pattern composed of a light-shielding film is already present on the transparent substrate when the semi-transparent film is formed. Therefore, it is not easy to measure the light transmittance of the formed semi-transparent film. In particular, since the photomask for manufacturing a display device has a large area (for example, a square shape having a side of 300mm or more), a large-sized apparatus (a sputtering apparatus or the like) is used for film formation, and it is difficult to uniformly deposit a film forming material in a plane. For example, depending on the relative position with respect to the sputtering target, the film thickness distribution may occur in the plane. If the film thickness can be measured accurately and the tendency thereof can be grasped accurately, it is considered that the influence of the 2 nd etching (patterning of the light-shielding film) in the manufacturing method of the present invention described later can be canceled out. However, the conventional method shown in fig. 3 has a problem that it is difficult to accurately measure the transmittance of the semi-transparent film at each position in the surface.
Therefore, it is found that the method of the prior art shown in fig. 3 has a problem in the case of producing a multi-tone photomask which is finer and has both higher CD accuracy and transmittance accuracy.
Accordingly, an object of the present invention is to provide a method for manufacturing a photomask, which can manufacture a multi-tone photomask having both higher CD accuracy and higher transmittance accuracy, a photomask, and a method for manufacturing a display device using the photomask.
Means for solving the problems
The present inventors have conducted extensive studies to solve the above problems, and as a result, have found that the above problems can be solved by an invention having the following configuration, and have completed the present invention.
That is, the present invention has the following configuration.
(constitution 1)
A method for manufacturing a photomask, the method including a transparent substrate and a pattern for transfer including a light transmission portion, a 1 st transmission control portion and a 2 nd transmission control portion, the method comprising: preparing a photomask blank having a 1 st thin film having a predetermined exposure light transmittance formed on the transparent substrate; a 1 st patterning step of forming a 1 st thin film pattern by etching the 1 st thin film; and a 2 nd patterning step of forming a 2 nd thin film on the transparent substrate on which the 1 st thin film pattern is formed and etching the 2 nd thin film to form a 2 nd thin film pattern, wherein in the 2 nd patterning step, only the 2 nd thin film is etched.
(constitution 2)
The method of manufacturing a photomask according to configuration 1, wherein the light transmitting portion is formed by exposing a surface of the transparent substrate, the 1 st transmission control portion has a portion where only the 1 st thin film is formed on the transparent substrate, and the 2 nd transmission control portion has a portion where only the 2 nd thin film is formed on the transparent substrate.
(constitution 3)
The method of manufacturing a photomask according to configuration 1 or 2, wherein the 1 st thin film is made of a material having resistance to the etchant of the 2 nd thin film.
(constitution 4)
The method of manufacturing a photomask according to claim 1 or 2, wherein the 1 st thin film is made of a material which can be etched by the etchant for the 2 nd thin film.
(constitution 5)
The method of manufacturing a photomask according to configuration 4, comprising a step of forming an etching stopper film on the transparent substrate on which the 1 st thin film pattern is formed, after the 1 st patterning step and before the 2 nd thin film is formed.
(constitution 6)
The method of manufacturing a photomask according to configuration 5, characterized by comprising a step of removing the etching stopper film of the light transmitting portion or the etching stopper films of the light transmitting portion and the 1 st transmission controller after the 2 nd patterning step.
(constitution 7)
The method of manufacturing a photomask according to any of constitutions 1 to 6, wherein the 1 st film is a semi-transparent film which partially transmits exposure light.
(constitution 8)
The method of manufacturing a photomask according to any one of configurations 1 to 6, wherein the phase difference of the exposure light transmitted through the 1 st transmission control part is set to a wavelength representative of the exposure light transmitted through the transmission part
(degree) satisfies
(constitution 9)
The method of manufacturing a photomask according to any one of configurations 1 to 6, wherein the light-transmitting layer transmits lightThe typical wavelength of the exposure light of the part, the phase difference of the exposure light transmitted through the 1 st transmission control part
(degree) satisfies
And the light transmittance Tf (%) of the above-mentioned 1 st transmission control section satisfies 5 Tf 60.
(constitution 10)
The method of manufacturing a photomask according to any one of configurations 1 to 6, wherein the phase difference of the exposure light transmitted through the 1 st transmission control part is set to a wavelength representative of the exposure light transmitted through the transmission part
(degree) satisfies
(constitution 11)
The method of manufacturing a photomask according to any one of configurations 1 to 6, wherein the phase difference of the exposure light transmitted through the 1 st transmission control part is set to a wavelength representative of the exposure light transmitted through the transmission part
(degree) satisfies
And the light transmittance Tf (%) satisfies 5 Tf 60.
(constitution 12)
The method of manufacturing a photomask according to any of constitutions 1 to 11, wherein the 2 nd film is a semi-transparent film which partially transmits exposure light.
(constitution 13)
The method of manufacturing a photomask according to any one of configurations 1 to 11, wherein the 2 nd transmission control part transmits the exposure light of a wavelength representative of the exposure light transmitted through the light transmission partPhase difference of exposure light
(degree) satisfies
(constitution 14)
The method of manufacturing a photomask according to any one of configurations 1 to 11, wherein the phase difference of the exposure light transmitted through the 2 nd transmission control part is set to a wavelength representative of the exposure light transmitted through the light transmission part
(degree) satisfies
And the light transmittance Tf (%) satisfies 5 Tf 80.
(constitution 15)
The method of manufacturing a photomask according to any one of configurations 1 to 11, wherein the phase difference of the exposure light transmitted through the 2 nd transmission control part is set to a wavelength representative of the exposure light transmitted through the light transmission part
(degree) satisfies
And the light transmittance Tf (%) satisfies 5 Tf 60.
(constitution 16)
The method of manufacturing a photomask according to any one of configurations 1 to 11, wherein the 2 nd thin film is a light-shielding film.
(constitution 17)
The method of manufacturing a photomask according to claim 16, wherein an antireflection layer for reducing reflection of light is provided on a surface portion of the 2 nd film.
(constitution 18)
The method of manufacturing a photomask according to any one of configurations 1 to 17, wherein the photomask blank has an additional formation film and a resist film on the 1 st thin film.
(constitution 19)
The method of manufacturing a photomask according to claim 18, wherein the adhesion between the additional formation film and the resist film is higher than the adhesion between the 1 st thin film and the resist film.
(constitution 20)
The method of manufacturing a photomask according to any of configurations 18 and 19, including a pre-patterning step of etching the additional constituent film to form an additional constituent film pattern before the 1 st patterning step, wherein the 1 st patterning step etches the 1 st thin film using the additional constituent film pattern as a mask.
(constitution 21)
The method of manufacturing a photomask according to configuration 20, wherein the additional configuration film pattern is removed after the 1 st patterning step and before the 2 nd patterning step.
(constitution 22)
A method for manufacturing a photomask, the method including a transparent substrate and a pattern for transfer, the pattern including a light-transmitting portion, a 1 st transmission control portion and a 2 nd transmission control portion, and including an adjacent portion where the 1 st transmission control portion is adjacent to the 2 nd transmission control portion, the method comprising: preparing a photomask blank having a 1 st thin film having a predetermined exposure light transmittance formed on the transparent substrate; a 1 st patterning step of forming a 1 st resist pattern in a region to be the 1 st transmission control section and etching the 1 st thin film to form a 1 st thin film pattern; a film forming step of forming a 2 nd thin film on the transparent substrate on which the 1 st thin film pattern is formed; and a 2 nd patterning step of forming a 2 nd resist pattern in a region to be the 2 nd transmission control portion and etching the 2 nd thin film to form a 2 nd thin film pattern, wherein in the 2 nd patterning step, a laminated portion where the 2 nd resist pattern and the 1 st thin film pattern are laminated is formed in the adjacent portion, and only the 2 nd thin film is etched by the 2 nd resist pattern.
(constitution 23)
The method of manufacturing a photomask according to claim 22, wherein the light-transmitting portion is formed by exposing a surface of the transparent substrate, the 1 st transmission control portion includes a portion where only the 1 st thin film is formed on the transparent substrate, and the 2 nd transmission control portion includes a portion where only the 2 nd thin film is formed on the transparent substrate.
(constitution 24)
The method of manufacturing a photomask according to claim 22 or 23, wherein the width M1 of the laminated portion is in the range of 0.5 to 2 μ M.
(constitution 25)
A photomask comprising a transfer pattern including a light transmitting portion, a 1 st transmission control portion and a 2 nd transmission control portion on a transparent substrate, wherein the transfer pattern includes a 1 st thin film and a 2 nd thin film having a predetermined exposure light transmittance, the light transmitting portion is formed by exposing a surface of the transparent substrate, the 1 st transmission control portion is formed by forming the 1 st thin film without forming the 2 nd thin film on the transparent substrate, the 2 nd transmission control portion is formed by forming at least the 2 nd thin film on the transparent substrate, and an etched cross section of the 2 nd thin film is formed at a boundary between the 1 st transmission control portion and the 2 nd transmission control portion without forming the etched cross section of the 1 st thin film.
(constitution 26)
The photomask according to claim 25, wherein the light-transmitting portion is formed by exposing a surface of the transparent substrate, the 1 st transmission control portion has a portion where only the 1 st thin film is formed on the transparent substrate, and the 2 nd transmission control portion has a portion where only the 2 nd thin film is formed on the transparent substrate.
(constitution 27)
The photomask according to claim 25 or 26, wherein the 1 st film is made of a material having resistance to an etchant of the 2 nd film.
(constitution 28)
The photomask according to claim 25 or 26, wherein the 1 st thin film is made of a material that can be etched by the etchant for the 2 nd thin film, and the 2 nd transmission control part has a portion where an etching stopper film and the 2 nd thin film are sequentially laminated.
(constitution 29)
The photomask according to any one of configurations 25 to 28, wherein the 2 nd transmission control part has a laminated portion of the 1 st thin film and the 2 nd thin film at an edge portion adjacent to the 1 st transmission control part.
(constitution 30)
The photomask according to claim 29, wherein the width M2 of the laminated portion is in the range of 0.5 to 2 μ M.
(constitution 31)
The photomask according to any one of configurations 25 to 30, wherein the 1 st thin film is a semi-transparent film, and the 2 nd thin film is a light-shielding film.
(constitution 32)
A photomask comprising a transfer pattern including a light transmission portion, a 1 st transmission control portion and a 2 nd transmission control portion on a transparent substrate, wherein the transfer pattern includes a 1 st thin film pattern composed of a 1 st thin film having a predetermined exposure light transmittance and a 2 nd thin film pattern composed of a 2 nd thin film, the light transmission portion is formed by exposing a surface of the transparent substrate, the 1 st transmission control portion has a portion where only the 1 st thin film pattern is formed on the transparent substrate, the 2 nd transmission control portion has a portion where only the 2 nd thin film pattern is formed on the transparent substrate, and has a laminated portion where the 1 st thin film pattern and the 2 nd thin film pattern are laminated, the laminated portion being sandwiched between the 1 st transmission control portion and the 2 nd transmission control portion.
(constitution 33)
The photomask according to claim 32, wherein the width M2 of the laminated portion is in the range of 0.5 to 2 μ M.
(constitution 34)
The photomask according to claim 32 or 33, wherein edges of the 1 st thin film pattern and the 2 nd thin film pattern have wet-etched cross sections of the 1 st thin film and the 2 nd thin film, respectively.
(constitution 35)
The photomask according to any one of configurations 32 to 34, wherein the 1 st thin film is a semi-transparent film that partially transmits exposure light.
(constitution 36)
The photomask according to any one of configurations 32 to 34, wherein the phase difference of the exposure light transmitted through the 1 st transmission control part is set to a representative wavelength of the exposure light transmitted through the transmission part
(degree) satisfies
(constitution 37)
The photomask according to any one of configurations 32 to 34, wherein the phase difference of the exposure light transmitted through the 1 st transmission control part is set to a representative wavelength of the exposure light transmitted through the transmission part
(degree) satisfies
And the light transmittance Tf (%) satisfies 5 Tf 60.
(constitution 38)
The photomask according to any one of configurations 32 to 34, wherein the phase difference of the exposure light transmitted through the 1 st transmission control part is set to a representative wavelength of the exposure light transmitted through the transmission part
(degree) satisfies
(constitution 39)
The photomask according to any one of configurations 32 to 34, wherein the phase difference of the exposure light transmitted through the 1 st transmission control part is set to a representative wavelength of the exposure light transmitted through the transmission part
(degree) satisfies
And the light transmittance Tf (%) satisfies 5 Tf 60.
(constitution 40)
The photomask according to any one of configurations 32 to 39, wherein the 2 nd thin film is a light-shielding film.
(constitution 41)
The photomask according to any one of configurations 32 to 39, wherein the 2 nd thin film is a semi-transparent film that partially transmits exposure light.
(constitution 42)
The photomask according to any one of configurations 32 to 39, wherein the phase difference of the exposure light transmitted through the 2 nd transmission control part with respect to the representative wavelength of the exposure light transmitted through the transmission part
(degree) satisfies
(constitution 43)
The photomask according to any one of configurations 32 to 39, wherein the phase difference of the exposure light transmitted through the 2 nd transmission control part with respect to the representative wavelength of the exposure light transmitted through the transmission part
(degree) satisfies
And the light transmittance Tf (%) satisfies 5 Tf 80.
(constitution 44)
The photomask according to any one of configurations 32 to 39, wherein the phase difference of the exposure light transmitted through the 2 nd transmission control part with respect to the representative wavelength of the exposure light transmitted through the transmission part
(degree) satisfies
And the light transmittance Tf (%) satisfies 5 Tf 60.
(constitution 45)
The photomask according to any one of configurations 25 to 44, wherein the transfer pattern is a pattern for manufacturing a display device.
(constitution 46)
A method of manufacturing a display device, comprising: preparing a photomask according to any one of the configurations 25 to 44; and a step of transferring the transfer pattern to a transfer target object by using an exposure device.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, since only each of the 1 st and 2 nd thin films is etched in the etching step, the etching time is set shorter than in the case of continuously etching a plurality of kinds of films stacked, and thus, the variation in the pattern size (CD) due to the side etching can be reduced. In particular, when etching is performed on each single film in all etching steps, the time required for etching can be calculated in advance from the film quality and the film thickness, and therefore, the dimensional variation due to the side etching can be minimized. Further, with the configuration of the photomask according to the present invention, the optical characteristics (for example, transmittance) of the 1 st transmission control unit and the 2 nd transmission control unit can be designed and managed more easily and accurately, and therefore, it is of great significance to manufacture a high-specification display device which is highly precise and achieves energy saving.
That is, according to the present invention, it is possible to provide a photomask manufacturing method and a photomask capable of manufacturing a photomask which is finer and has higher CD accuracy and optical property (transmittance and the like) accuracy.
Further, according to the present invention, by manufacturing a display device using the photomask, a high-specification display device which is highly precise and realizes saving can be manufactured.
Drawings
Fig. 1 is a diagram showing steps in embodiment 1 of a method for manufacturing a photomask according to the present invention.
Fig. 2 is a diagram showing the steps of embodiment 2 of the method for manufacturing a photomask of the present invention.
Fig. 3 is a diagram showing a conventional photomask manufacturing process disclosed in the conventional document.
Fig. 4 is a reference diagram showing a conventional photomask manufacturing process for explaining the problems of the conventional art.
Detailed Description
The present embodiment will be described in detail below with reference to the drawings.
[ embodiment 1 ]
As shown in the above configuration 1, a method for manufacturing a photomask according to the present invention is a method for manufacturing a photomask including a pattern for transfer including a light transmitting portion, a 1 st transmission control portion, and a 2 nd transmission control portion on a transparent substrate, the method including: preparing a photomask blank having a 1 st thin film having a predetermined exposure light transmittance formed on the transparent substrate; a 1 st patterning step of forming a 1 st thin film pattern by etching the 1 st thin film; and a 2 nd patterning step of forming a 2 nd thin film on the transparent substrate on which the 1 st thin film pattern is formed, and etching the 2 nd thin film to form a 2 nd thin film pattern, wherein in the 2 nd patterning step, only the 2 nd thin film is etched.
In embodiment 1 described below, the 1 st transmission control unit is a translucent unit that partially transmits exposure light, and the 2 nd transmission control unit is a light shielding unit. The 1 st film is a semi-light-transmitting film, and the 2 nd film is a light-shielding film.
Fig. 1 is a diagram showing steps in embodiment 1 of a method for manufacturing a photomask according to the present invention.
Hereinafter, the respective steps will be described in order.
First, a photomask blank (substrate with a semi-transparent film) 10 in which a semi-transparent film 2 having a predetermined exposure light transmittance is formed on a transparent substrate 1 is prepared (see fig. 1 a).
Here, as the transparent substrate 1, a substrate obtained by polishing a transparent material made of quartz glass or the like to be flat and smooth is used. The transparent substrate used for a photomask for manufacturing a display device preferably has a main surface having a rectangular shape with a side length of 300mm or more and a thickness of 5 to 13 mm.
On one main surface of the transparent substrate 1, a semi-light-transmitting film 2 is formed by a known film formation method such as a sputtering method. The material and the film thickness of the semi-transmissive film 2 can be determined in advance so as to have a desired transmittance for exposure light used for exposing the photomask.
As the exposure light, for example, a light source including i-rays, h-rays, and g-rays, which is provided in a liquid crystal exposure apparatus or the like, can be used. Therefore, the transmittance of light in the wavelength region of these light sources can be set as a reference, and can be generally expressed by a numerical value of transmittance of light at a representative wavelength (i-ray is set here) included in these light sources.
The light transmittance Tf of the semi-transparent film 2 is preferably 5 to 60% with respect to i-rays (the transparent substrate is 100%). More preferably 10 to 40%.
Here, Tf is the light transmittance of the semi-light transmissive film 2 used, as described above. In general, when a fine pattern is formed on the semi-transparent film 2, the effective light transmittance of the semi-transparent portion may be different from that at the time of film formation due to the influence of diffraction and interference of light by the light-shielding portion and the light-transmitting portion arranged in the periphery. The light transmittance Tf here is a transmittance specific to the film, which is not affected by diffraction and interference of light by surrounding patterns, and is a transmittance specific to the lamination, for example, when the semi-light-transmitting film 2 has a laminated structure.
In addition, the semi-transparent film 2 may have a desired phase shift effect on the representative wavelength of the exposure light. Considering the amount of phase shift of the semi-transparent film 2 when forming a resist pattern having a plurality of residual film thicknesses on a transferred object as a multi-tone photomask
(degree) preferably satisfies
And more preferably satisfies
And (4) degree. Thus, the phase difference generated between the portion where the semi-transmissive film 2 is formed and the light-transmissive portion is the above-described phase difference
(degree) range. This is to prevent an unnecessary protrusion of the resist pattern from being generated at a position corresponding to the semi-light transmitting portion and the light transmitting portion of the multi-tone photomask (in the case of a positive resist).
Of course, the shape of the resist pattern formed on the transferred body may be controlled by the phase shift effect
Degree of degree, or may be
And (4) degree.
The material of the semi-transparent film 2 may be, for example, a film containing Si, Cr, Ta, Zr, or the like, and an appropriate material may be selected from oxides, nitrides, carbides, and the like thereof. As the Si-containing film, a compound of Si (SiON, etc.), a transition metal silicide (MoSi, etc.), or a compound thereof can be used. Examples of the compound of MoSi include oxides, nitrides, oxynitrides, and oxynitrides of MoSi.
When the material of the semi-light-transmitting film 2 is a Cr-containing film, a Cr compound (oxide, nitride, carbide, nitride oxide, nitride carbide, carbide nitride oxide) may be used.
In the present embodiment, the semi-light transmissive film 2 and the light shielding film 5 described later preferably have etching selectivity (etching characteristics different) from each other. That is, the semi-light-transmitting film 2 preferably has resistance to an etchant (specifically, an etching solution because wet etching is applied in the present embodiment) of the light-shielding film 5. Here, regarding the resistance, it is preferable that the etching rate ratio between the semi-light-transmitting film 2 and the light-shielding film 5 with respect to the etching liquid of the light-shielding film 5 is 1/50 or less, preferably 1/100 or less. From this viewpoint, for example, if a film containing Cr is used as the light-shielding film 5, Si-based (for example, containing MoSi) can be applied to the semi-light-transmitting film 2. Alternatively, the opposite may be true.
The semi-transparent film 2 can be formed by a known method or apparatus such as sputtering. The thickness of the semi-light transmissive film 2 is set to a predetermined thickness so as to have a desired transmittance with respect to exposure light used for exposing the photomask.
After the formation of the semi-transmissive film 2, it is preferable to set an appropriate number of measurement points in the plane and measure the light transmittance (absolute value and in-plane distribution thereof). The measurement may be carried out, for example, using a spectrophotometer. In the semi-transmissive film 2 after film formation, there is a case where a certain film thickness distribution tendency is generated depending on the position of the main surface of the substrate due to the film forming apparatus and the film forming conditions, and therefore, data obtained by measurement can be stored for the purpose of securing the product, for the purpose of reflecting drawing data in the subsequent process, or the like. In this way, the transmittance of the semi-transparent film is more easily and accurately controlled, and thus the transmittance accuracy as a photomask can be improved.
Subsequently, a resist film 3 is applied and formed on the surface of the prepared photomask blank 10, thereby producing a blank with a resist. Drawing 4 (drawing 1) of a predetermined pattern is performed (see fig. 1 (b)). The surface of the semi-light-transmitting film 2 may be subjected to a surface treatment for improving adhesion to the resist film 3 as necessary.
In order to supplement the adhesion between the semi-light-transmitting film 2 and the resist film, a film may be additionally disposed between them.
The material of the constituent film may be selected so that the adhesion between the constituent film and the resist film is higher than the adhesion between the semi-transmissive film and the resist film. That is, by disposing this constituent film, it is possible to make the adhesion between the resist film and the semi-transmissive film in direct contact therewith good. The additional film is formed of a material having higher adhesion to the resist film than the semi-transmissive film. For example, a Cr compound may be used.
The resist film 3 can be formed by coating using a known apparatus such as a slit coater or a spin coater. Any of a positive resist and a negative resist can be used as appropriate, and here, an example in which a positive resist is used will be described.
The 1 st patterning step is performed. First, the resist film 3 formed by coating is drawn in accordance with drawing data based on a desired pattern using a drawing device. As a drawing device, there is a device using an electron beam or a laser, and for a photomask for manufacturing a display device, drawing using a laser can be usefully employed.
Next, the resist film 3 thus drawn is developed to form a resist pattern 3a (the 1 st resist pattern) (see fig. 1 c).
Next, the semi-light transmissive film 2 is subjected to wet etching (1 st etching) using the formed resist pattern 3a as an etching mask, thereby forming a semi-light transmissive film pattern 2a (see fig. 1 d). Here, since the etching target is only the semi-transparent film 2, the etching end point can be accurately set with reference to the etching rate grasped in advance.
Then, the remaining resist pattern 3a is removed (see fig. 1 (e)).
Here, the pattern size (CD) of the semi-transmissive film pattern 2a is measured as necessary. The pattern edge is only a semi-transparent film, and therefore, measurement can be performed relatively easily.
When an additional constituent film is formed between the semi-transmissive film 2 and the resist film 3, the semi-transmissive film pattern 2a can be formed by wet etching (pre-etching) the constituent film using the resist pattern 3 as an etching mask and wet etching (1 st etching) the semi-transmissive film 2 using the formed additional constituent film pattern as an etching mask.
In this case, it is preferable to remove the additional constituent film pattern before the following 2 nd patterning step.
Next, a light shielding film 5 is formed on the entire surface of the transparent substrate 1 having the semi-transmissive film pattern 2a formed on the main surface thereof (see fig. 1 (f)). Here, a conventional film forming apparatus similar to that used for forming the semi-transparent film 2 may be used.
The light shielding film 5 may be made of a material selected from the same materials as those listed as the material of the semi-light transmissive film 2. Alternatively, the metal may be a simple substance of the above-mentioned metal such as Cr, Si, or the like. An antireflection layer that reduces (suppresses) light reflection may also be further provided on part of the surface of the light-shielding film.
As described above, in the present embodiment, the light shielding film 5 is made of a material having etching characteristics different from those of the material used for the semi-light transmissive film 2. For example, the etching rate ratio between the light-shielding film 5 and the semi-light-transmitting film 2 is preferably 1/50 or less, and more preferably 1/100 or less, with respect to the etching solution for the semi-light-transmitting film 2. Therefore, for example, a material containing Si may be used for the semi-light transmissive film 2, a material containing Cr may be used for the light blocking film 5, or the opposite may be used.
The film thickness of the light-shielding film 5 is set in consideration of the fact that light-shielding properties can be sufficiently exhibited and that an excessive time is not required for etching, which will be described later. Specifically, the optical density OD may be set to 3 or more, preferably 4 or more, and may be set to 4. ltoreq. OD.ltoreq.6, for example.
Next, a resist film 6 (here, also referred to as a positive type) is applied and formed on the light-shielding film 5, and drawing 7 (drawing 2) of a predetermined pattern is performed (see fig. 1 (g)). The drawing method is the same as that in the drawing of the above 1 st.
However, when the transmittance distribution data in the plane measured after the formation of the semi-light-transmitting film 2 is deviated to an extent that cannot be tolerated and the correction thereof is desired by the pattern of the light-shielding film 5, the drawing data for drawing 2 can be processed. For example, in a fine semi-transmissive portion adjacent to the light shielding portion, the transmission intensity of the exposure light that transmits the semi-transmissive portion tends to decrease. By utilizing this principle, for example, the size of the semi-transmissive portion in the region where the transmittance is lower than the design value can be corrected in the direction of increasing the transmission intensity of the exposure light by making the size larger than the design value.
Next, the resist film 6 thus drawn is developed to form a resist pattern 6a (the 2 nd resist pattern) (see fig. 1 h).
Next, the light-shielding film 5 is subjected to wet etching (2 nd etching) using the formed resist pattern 6a as an etching mask, thereby forming a light-shielding film pattern 5a (see fig. 1 (i)). Since the etching target here is only the light-shielding film 5, the etching end point can be easily set by referring to, for example, the etching rate grasped in advance. In addition, as described above, in the present embodiment, since the semi-light transmissive film 2 is made of a material having resistance to the etchant of the light-shielding film 5, only the light-shielding film 5 is etched and removed in the semi-light transmissive portion forming region in the above-described etching 2, and the semi-light transmissive film pattern 2a in the lower layer is not substantially affected by the etching.
Then, the remaining resist pattern 6a is removed by peeling off, thereby completing a photomask 20 (multi-tone photomask) having a transfer pattern including a light transmitting portion, a light shielding portion, and a semi-light transmitting portion (see fig. 1 (j)).
The photomask 20 (multi-tone photomask) exemplified herein has the following configuration. That is, the translucent portion is formed by exposing the surface of the transparent substrate, the semi-translucent portion (the 1 st transmission control portion) has a portion where only the semi-translucent film (the 1 st film) is formed on the transparent substrate, and the light-shielding portion (the 2 nd transmission control portion) has a portion where only the light-shielding film (the 2 nd film) is formed on the transparent substrate.
The photomask 20 has a light-shielding portion and a translucent portion adjacent to each other. In the light-shielding portion, a laminated portion of a semi-light-transmissive film (semi-light-transmissive film pattern 2a) and a light-shielding film (light-shielding film pattern 5a) is provided with a predetermined constant width in the vicinity of an edge in contact with the semi-light-transmissive portion. This is a registration tolerance for absorbing the registration shift in consideration of the possibility that the light shielding portion and the semi-light transmitting portion are not adjacent to each other and separated from each other when the registration shift occurs in the above-described 2 drawings (the 1 st drawing and the 2 nd drawing). The alignment tolerance may be formed by processing the drawing data of the 1 st drawing or the 2 nd drawing. For example, the size of the 2 nd resist pattern may be set so as to be laminated (overlapped) with the edge portion of the semi-transmissive film pattern in which the edge portion of the 2 nd resist pattern has been already formed, in the vicinity of the boundary between the light shielding portion and the semi-transmissive portion. In this case, the width M of the laminated portion (see FIG. 1(j)) is not particularly limited, and may be, for example, 0.5 μ M or more, preferably 0.5 to 2 μ M, and more preferably 0.5 to 1 μ M.
That is, in the photomask obtained by the above manufacturing method, the semi-transmissive portion has only the semi-transmissive film formed on the transparent substrate and the light-shielding portion has only the light-shielding film formed on the transparent substrate, except for the laminated portion that is the alignment tolerance.
In addition, the present invention also provides a photomask.
The photomask 20 obtained in the present embodiment has the following features.
That is, a photomask having a pattern for transfer including a translucent portion, a light-blocking portion and a translucent portion on a transparent substrate, wherein the translucent portion is formed by exposing a surface of the transparent substrate, the translucent portion is formed by forming the translucent film without forming the light-blocking film on the transparent substrate, the light-blocking portion is formed by forming at least the light-blocking film on the transparent substrate to form a hiccup, and an etched cross section of the light-blocking film is formed at a boundary between the translucent portion and the light-blocking portion without forming an etched cross section of the translucent film.
That is, as shown in fig. 1(j), although the edges of the semi-transmissive film pattern 2a and the light-shielding film pattern 5a have wet-etched cross sections of the semi-transmissive film and the light-shielding film, respectively, the edge position of the semi-transmissive film pattern 2a does not coincide with the edge position of the light-shielding film pattern 5 a. The etched cross section described herein is a cross section obtained by wet etching in the present embodiment.
Thus, the position of the etched cross section of the semi-transparent film and the light shielding film is not consistent with the alignment tolerance.
As described above, the material of the semi-light transmitting film and the light shielding film in the photomask according to the present embodiment is the material having resistance to the etchant of the light shielding film.
The light shielding portion has a laminated portion of the semi-light transmissive film and the light shielding film at an edge portion adjacent to the semi-light transmissive portion, and the width M (see fig. 1(j)) of the laminated portion is preferably in the range of 0.5 to 2 μ M, for example.
The transfer pattern of the photomask of the present embodiment is, for example, a pattern for manufacturing a display device, and is particularly useful for manufacturing a display device.
As described above, according to the present embodiment, in the etching steps of the semi-light transmissive film and the light blocking film, only the respective films are etched. Therefore, the etching time is set shorter than in the case of continuously etching a plurality of kinds of films stacked, and thus, the pattern size (CD) variation due to the side etching can be reduced. In particular, when etching is performed on each single film in all etching steps, the time required for etching can be calculated in advance from the film quality and the film thickness, and therefore, the dimensional variation due to the side etching can be minimized. Further, with the configuration of the photomask of the present embodiment, the transmittance of the semi-light transmissive film is more easily and accurately controlled, and therefore, the photomask has a great significance in manufacturing a high-definition, energy-saving, and high-specification display device.
That is, according to the present embodiment, it is possible to provide a photomask manufacturing method and a photomask capable of manufacturing a multi-tone photomask which is finer and has both higher CD accuracy and higher transmittance accuracy.
In the above-described embodiment, an example was described in which the 1 st transmission control section is a semi-transmissive section that partially transmits exposure light, the 2 nd transmission control section is a light-shielding section, the 1 st thin film is a semi-transmissive film, and the 2 nd thin film is a light-shielding film, but the manufacturing method of the present invention is not limited thereto, and when other thin films are applied, excellent operational effects can be obtained. For example, the 1 st film and the 2 nd film may be semi-transparent films having predetermined transmittance of exposure light. In this case, the 1 st thin film and the 2 nd thin film may be films containing Si, Cr, Ta, Zr, or the like as exemplified as the semi-transparent film material, and an appropriate material may be selected from oxides, nitrides, carbides, and the like thereof.
In the case where the 1 st film and the 2 nd film are each a semi-transparent film having a predetermined exposure light transmittance, and the both films have resistance to an etchant against each other, for example, one film may be a Cr-based film and the other film may be a Si-based film or a transition metal silicide-based film.
In addition, in the photomask of the present invention, as the method of applying these 1 st and 2 nd thin films, for example, the following may be more specifically mentioned as useful examples:
a. a phase difference of a representative wavelength of the exposure light transmitted through the 1 st transmission control part having the part of the 1 st thin film formed on the transparent substrate with respect to the exposure light transmitted through the transparent part formed by exposing the surface of the transparent substrate
(degree) satisfies
The case (1);
b. a phase difference of the exposure light transmitted through the 1 st transmission control part relative to the representative wavelength of the exposure light transmitted through the transmission part
(degree) satisfies
And the light transmittance Tf (%) satisfies the condition that Tf is not less than 5 and not more than 60;
c. a phase difference of the exposure light transmitted through the 1 st transmission control part relative to the representative wavelength of the exposure light transmitted through the transmission part
(degree) satisfies
The case (1);
d. a phase difference of the exposure light transmitted through the 1 st transmission control part relative to the representative wavelength of the exposure light transmitted through the transmission part
(degree) satisfies
And the light transmittance Tf (%) satisfies the condition that Tf is not less than 5 and not more than 60;
e. a phase difference of the exposure light transmitted through the 2 nd transmission control part having only the 2 nd thin film formed on the transparent substrate relative to the representative wavelength of the exposure light transmitted through the transmission part
(degree) satisfies
The case (1);
f. a phase difference of the exposure light transmitted through the 2 nd transmission control part relative to the representative wavelength of the exposure light transmitted through the transmission part
(degree) satisfies
And the light transmittance Tf (%) satisfies the condition that Tf is more than or equal to 5 and less than or equal to 80;
g. a phase difference of the exposure light transmitted through the 2 nd transmission control part relative to the representative wavelength of the exposure light transmitted through the transmission part
(degree) satisfies
And the light transmittance Tf (%) satisfies the condition that Tf is not less than 5 and not more than 60; and so on.
In either case, the effect of the present invention that can control CD accuracy to be high can be obtained. Further, since the optical characteristics of the 1 st transmission control unit and the 2 nd transmission control unit can be independently designed, a high-quality photomask having desired design values can be manufactured.
The multi-tone photomask of the present invention can be suitably selected from a to g, and can be used as a photomask suitable for the intended use. The photomask of the present invention includes, for example, the photomask described in embodiment 1 in which the light-shielding film is applied to the 1 st film and the above-described a or b and the 2 nd film. Such a multi-tone photomask functions as a multi-piece photomask as described above. Thus, the multi-gray scale photomask has the following advantages: the method can improve the manufacturing efficiency of the display device, or can be used as a photomask for forming a three-dimensional structure having a step by transfer.
The photomask of the present invention may be, for example, a photomask in which the above-described c or d is applied to the 1 st thin film in the photomask described in embodiment 1, and in this case, the photomask functions as a phase shift mask. In this case, the 2 nd film may be a light-shielding film, or a semi-light-transmitting film described in e or f above. The phase shift mask has a function of improving contrast and DOF (Depth of field) by utilizing interference of light generated at a boundary between a translucent portion where the phase of transmitted light is inverted and a translucent portion where the phase of transmitted light is not inverted.
In particular, when c or d is applied to the 1 st film and e or f is applied to the 2 nd film, a photomask having both the function of a multi-tone photomask and the function of a phase shift mask can be realized.
In the case where both the 1 st and 2 nd transmission control sections are translucent sections, the width is sufficiently small in the case where a laminated portion in which the 1 st and 2 nd thin films are laminated is formed in the vicinity of the boundary, and therefore the optical function of the photomask is not substantially hindered. In this case, the width of the laminated portion is more preferably 1 μm or less, and may be set to 0.75 μm or less. More preferably 0.25 to 0.75 μm.
The width M of the laminated portion on the drawing data may be set to the same range.
On the other hand, the 1 st transmittance control section and the 2 nd transmittance control section (or the light shielding section) preferably have a size exceeding 2 μm, preferably exceeding 3 μm, even in the smallest portion.
[ 2 nd embodiment ]
Fig. 2 is a diagram showing the steps of embodiment 2 of the method for manufacturing a photomask of the present invention.
Hereinafter, the respective steps will be described in order.
First, a photomask blank 10 in which a translucent film 2 having a predetermined exposure light transmittance is formed on a transparent substrate 1 is prepared (see fig. 2 (a)).
This photomask blank 10 is the same as that prepared in embodiment 1 described above. Therefore, the range of the light transmittance Tf of the semi-light transmissive film 2 may be the same as that of embodiment 1. The material of the semi-light-transmitting film 2 may be appropriately selected from the materials exemplified in embodiment 1.
However, in the present embodiment, since the etching stopper film is provided between the semi-light-transmitting film and the light-shielding film as described later, the semi-light-transmitting film 2 and the light-shielding film 5 described later do not need to be made of materials having different etching characteristics. Therefore, for example, the material of the semi-transmissive film 2 is Cr-based, and the light-shielding film 5 is also Cr-based.
After the formation of the semi-light-transmitting film 2, it is preferable to set an appropriate number of measurement points in the plane and measure the light transmittance as in embodiment 1. Since the measurement is performed in a state of a single film on the substrate, the measurement can be performed easily and accurately.
Next, a resist film 3 is applied and formed on the photomask blank 10, and a predetermined pattern 4 (drawing 1) is drawn (see fig. 2 (b)). The surface of the translucent film 2 may be subjected to a surface treatment for improving adhesion to the resist film as necessary.
As described above, the resist film 3 can be formed by coating using a known apparatus such as a slit coater or a spin coater. Any of a positive resist and a negative resist can be used as appropriate, and in this embodiment, an example in which a positive resist is used will be described.
The formed resist film 3 is drawn by a drawing device in accordance with drawing data based on a desired pattern. The drawing device is a drawing device using a laser beam as in embodiment 1.
Then, the resist film 3 thus drawn is developed to form a resist pattern 3a (the 1 st resist pattern) (see fig. 2 c).
Next, the semi-transmissive film 2 is subjected to wet etching (1 st etching) using the formed resist pattern 3a as an etching mask, thereby forming a semi-transmissive film pattern 2a (see fig. 2 d). Here, since the etching target is only the semi-transparent film 2, the etching end point can be accurately set with reference to the etching rate grasped in advance.
The remaining resist pattern 3a is removed by stripping (see fig. 2 (e)).
Here, the pattern size (CD) of the semi-transmissive film pattern 2a is measured as necessary. The pattern edge is only a semi-transparent film, and therefore, measurement can be performed relatively easily.
In the present embodiment, next, the etching stopper film 8 is formed on the entire surface of the transparent substrate 1 having the semi-transmissive film pattern 2a formed on the main surface thereof (see fig. 2 f).
The etching stopper film 8 is made of a material having resistance to an etchant of the light shielding film 5 described later. For example, it is preferable that the etching rate ratio between the etching stopper film 8 and the light shielding film 5 is 1/50 or less, preferably 1/100 or less, with respect to the etching solution of the light shielding film 5.
Therefore, for example, in the case where a material containing Cr is used for the light-shielding film 5, a material containing Si may be used for the etching stopper film 8, or vice versa. In consideration of these circumstances, the material of the etching stopper film 8 may be selected from the materials mentioned as the material of the semi-light transmissive film and the light shielding film in embodiment 1.
Next, a light shielding film 5 is further formed on the etching stopper film 8, that is, on the main surface of the transparent substrate 1 on which the semi-transmissive film pattern 2a and the etching stopper film 8 are formed (see fig. 2 (g)).
The etching stopper film 8 and the light shielding film 5 may be formed by the same film forming apparatus as described above.
The material of the light-shielding film 5 may be appropriately selected from the materials exemplified in embodiment 1, and as mentioned above, in the present embodiment, the material of the light-shielding film 5 and the semi-light-transmissive film 2 do not need to have a mutual etching selectivity.
Next, a resist film 6 (also a positive resist in this case) is applied and formed on the light-shielding film 5, and drawing 7 (drawing 2) of a predetermined pattern is performed (see fig. 2 (h)). The drawing method is the same as the case of the drawing of the above 1 st drawing.
As described above, when the transmittance distribution data in the plane measured after the formation of the semi-light-transmitting film 2 is deviated to an unacceptable degree and the pattern of the light-shielding film 5 is to be corrected, the drawing data for drawing the 2 nd drawing can be processed.
Next, the drawn resist film 6 is developed to form a resist pattern 6a (2 nd resist pattern) (see fig. 2 (i)).
Next, the light-shielding film 5 is subjected to wet etching (2 nd etching) using the formed resist pattern 6a as an etching mask, thereby forming a light-shielding film pattern 5a (see fig. 2 j). Since the etching target here is only the light-shielding film 5, the etching end point can be easily set by referring to the etching rate grasped in advance. In addition, as described above, in the present embodiment, since the etching stopper film 8 is made of a material having resistance to the etchant of the light shielding film 5, only the light shielding film 5 is etched and removed in the 2 nd etching.
Then, the remaining resist pattern 6a is removed by peeling off, thereby completing a photomask 30 (multi-tone photomask) having a transfer pattern including a light transmitting portion, a light shielding portion, and a semi-light transmitting portion (see fig. 2 (k)).
After that, the etching stopper film 8 exposed on the surface of the photomask 30 is removed as necessary. In the case of removing the etching stopper film 8, the semi-transparent film 2 and the etching stopper film 8 are previously made to have etching selectivity. That is, for example, both the semi-light-transmitting film 2 and the light-shielding film 5 may be Cr-containing films, and the etching stopper film 8 may be Si-containing films, or vice versa. The etching stopper film 8 may not be removed unless the light transmittance of the semi-transmissive portion or the transmissive portion of the photomask 30 is particularly affected.
The photomask 30 (multi-tone photomask) exemplified in the present embodiment also has a portion adjacent to the light-shielding portion and the translucent portion. In the light-shielding portion, a laminated portion of a semi-light-transmissive film (semi-light-transmissive film pattern 2a) and a light-shielding film (light-shielding film pattern 5a) is provided with a predetermined constant width in the vicinity of an edge in contact with the semi-light-transmissive portion. This is a registration tolerance for absorbing the registration shift in consideration of the possibility that the light shielding portion and the semi-light transmitting portion are not adjacent to each other and separated from each other when the registration shift occurs in the above-described 2 drawings (the 1 st drawing and the 2 nd drawing). The alignment tolerance may be formed by processing the drawing data of the 1 st drawing or the 2 nd drawing. For example, the width M (see FIG. 2(k)) of the laminated portion is not particularly limited, and may be, for example, 0.5 to 2 μ M, and preferably 0.5 to 1 μ M. This is also the same as embodiment 1.
The photomask 30 obtained in the present embodiment also has the following features in the same manner as in embodiment 1.
That is, a photomask having a pattern for transfer including a light-transmitting portion, a light-blocking portion and a semi-light-transmitting portion on a transparent substrate, wherein the light-transmitting portion is formed by exposing a surface of the transparent substrate, the semi-light-transmitting portion is formed by forming the semi-light-transmitting film without forming the light-blocking film on the transparent substrate, the light-blocking portion is formed by forming at least the light-blocking film on the transparent substrate, and an etched cross section of the light-blocking film is formed at a boundary between the semi-light-transmitting portion and the light-blocking portion without forming an etched cross section of the semi-light-transmitting film.
As described above, the material of the semi-light transmissive film and the light shielding film in the photomask does not need to have etching selectivity between the semi-light transmissive film and the light shielding film in the photomask of the present embodiment.
In addition, the edge portion adjacent to the semi-light transmitting portion of the light shielding portion has a laminated portion of the semi-light transmitting film and the light shielding film, and a preferable range of the width M (see fig. 2(k)) of the laminated portion is, for example, 0.5 to 2 μ M as described above.
The pattern for transfer of the photomask of the present embodiment is also a pattern for manufacturing a display device, for example, and is particularly useful for manufacturing a display device.
As described above, in the present embodiment, in the etching steps of the semi-transmissive film and the light-shielding film, only the respective films are etched. Therefore, the etching time is set shorter than in the case of continuously etching a plurality of kinds of films stacked, and thus, the pattern size (CD) variation due to the side etching can be reduced. In particular, when etching is performed on each single film in all etching steps, the time required for etching can be calculated in advance from the film quality and the film thickness, and therefore, dimensional variations due to side etching can be minimized. Further, with the configuration of the photomask of the present embodiment, the transmittance of the semi-light transmissive film is more easily and accurately controlled, and therefore, the photomask has a great significance in manufacturing a high-definition, energy-saving, and high-specification display device.
That is, according to the present embodiment, it is possible to provide a photomask manufacturing method and a photomask capable of manufacturing a multi-tone photomask which is finer and has both higher CD accuracy and higher transmittance accuracy.
In the above-described embodiment, the example in which the 1 st transmission control section is a semi-transmissive section that partially transmits exposure light, the 2 nd transmission control section is a light-shielding section, the 1 st thin film is a semi-transmissive film, and the 2 nd thin film is a light-shielding film has been described, but the manufacturing method of the present invention is not limited thereto, and when other thin films are applied, excellent operational effects can be obtained. For example, the 1 st film and the 2 nd film may be semi-transparent films having predetermined transmittance of exposure light.
In the photomask of the present embodiment, as a method of applying these 1 st and 2 nd thin films, for example, the following may be mentioned more specifically as a useful example:
a. a phase difference of a representative wavelength of the exposure light transmitted through the 1 st transmission control part having the part of the 1 st thin film formed on the transparent substrate with respect to the exposure light transmitted through the transparent part formed by exposing the surface of the transparent substrate
(degree) satisfies
The case (1);
b. a phase difference of the exposure light transmitted through the 1 st transmission control part relative to the representative wavelength of the exposure light transmitted through the transmission part
(degree) satisfies
And the light transmittance Tf (%) satisfies the condition that Tf is not less than 5 and not more than 60;
c. the exposure light transmitted through the 1 st transmission control part relative to the representative wavelength of the exposure light transmitted through the transmission partIs not equal to
(degree) satisfies
The case (1);
d. a phase difference of the exposure light transmitted through the 1 st transmission control part relative to the representative wavelength of the exposure light transmitted through the transmission part
(degree) satisfies
And the light transmittance Tf (%) satisfies the condition that Tf is not less than 5 and not more than 60;
e. a phase difference of the exposure light transmitted through the 2 nd transmission control part having only the 2 nd thin film formed on the transparent substrate relative to the representative wavelength of the exposure light transmitted through the transmission part
(degree) satisfies
The case (1);
f. a phase difference of the exposure light transmitted through the 2 nd transmission control part relative to the representative wavelength of the exposure light transmitted through the transmission part
(degree) satisfies
And the light transmittance Tf (%) satisfies the condition that Tf is more than or equal to 5 and less than or equal to 80;
g. a phase difference of the exposure light transmitted through the 2 nd transmission control part relative to the representative wavelength of the exposure light transmitted through the transmission part
(degree of heating)) Satisfy the requirement of
And the light transmittance Tf (%) satisfies the condition that Tf is not less than 5 and not more than 60; and so on.
In either case, the effect of the present invention that can control CD accuracy to be high can be obtained. Further, since the optical characteristics of the 1 st transmission control unit and the 2 nd transmission control unit can be independently designed, a high-quality photomask having desired design values can be manufactured.
In addition, the photomask of the present invention according to embodiment 2 can be manufactured into a photomask suitable for the application by appropriately selecting the configurations of a to g and the like as in embodiment 1.
The above description has explained embodiment 1 and embodiment 2 of the present invention.
In the above embodiment, other constituent films may be present above, below, or in the middle of any of the semi-light-transmitting film 2, the light-shielding film 5, and the etching stopper film 8, within a range not to impair the operation and effect of the present invention.
In addition, the present invention provides a method of manufacturing a display device, including: for example, a photomask according to the above embodiment is prepared, and the transfer pattern is transferred to the transfer target by using an exposure apparatus. According to the present invention, a display device having high definition and high specification and capable of saving energy can be manufactured by manufacturing a display device using the photomask.
That is, the use of the photomask of the present invention is not limited. For example, a photomask having a transfer pattern used for various layers can be used as a photomask for manufacturing a panel substrate of a display device (e.g., a liquid crystal display or an organic EL display).
For example, a photomask having a transfer pattern for manufacturing a TFT (Thin Film Transistor) can be exemplified. In the bottom gate type TFT using amorphous Si or an oxide semiconductor, a photomask which is a process for forming a semiconductor layer and a Source (Source)/Drain (Drain) layer with 1 exposure may be advantageously applied.
Alternatively, the photomask of the present invention can be advantageously applied to the production of a spacer for liquid crystal using a photosensitive insulating layer. The method can be used for the step of forming a step structure in a photosensitive insulating film by 1 exposure, and can efficiently form a spacer for forming a cell gap, a spacer with a slightly low height for preventing breakage when pressing is applied, and the like by 1 exposure.
The exposure apparatus used for exposure of the photomask of the present invention may be, for example, a projection exposure system having an optical system with an equal magnification of a Numerical Aperture (NA) of 0.08 to 0.15 and a coherence factor (σ) of 0.5 to 0.9. Alternatively, a proximity exposure method may be applied. Of course, the present invention can also be applied to an exposure apparatus for reducing exposure and expanding exposure.
[ description of symbols ]
1 transparent substrate
2 semi-transparent film
3. 6 resist film
4. 7 drawing
5 light-shielding film
8 etching stopper film
10 photo mask blank (substrate with semi-transparent film)
20. 30 photo mask
Claims (25)
1. A method for manufacturing a photomask, which is a method for manufacturing a photomask having a pattern for transfer including a light transmitting portion, a 1 st transmission control portion and a 2 nd transmission control portion on a transparent substrate,
the manufacturing method comprises the following steps:
preparing a photomask blank having a 1 st thin film having a predetermined exposure light transmittance formed on the transparent substrate;
a 1 st patterning step of forming a 1 st thin film pattern by wet etching the 1 st thin film; and
a 2 nd patterning step of forming a 2 nd thin film pattern by wet-etching a 2 nd thin film formed on the transparent substrate on which the 1 st thin film pattern is formed,
the 1 st film is a Si-containing film,
the light-transmitting part is formed by exposing the surface of the transparent substrate,
the 1 st transmission control part has a portion where only the 1 st thin film is formed on the transparent substrate,
the 2 nd transmission control part has a portion where only the 2 nd thin film is formed on the transparent substrate.
2. The method of manufacturing a photomask according to claim 1, wherein the 1 st film is made of a material having resistance to an etchant for the 2 nd film.
3. The method of manufacturing a photomask according to claim 1 or 2, wherein the 1 st film is a semi-transparent film that partially transmits exposure light.
4. The method of manufacturing a photomask according to claim 1 or 2, wherein the phase difference of the exposure light transmitted through the 1 st transmission control part is set to a representative wavelength of the exposure light transmitted through the transmission part
Satisfy the requirement of
5. The method of manufacturing a photomask according to claim 1 or 2, wherein the phase difference of the exposure light transmitted through the 1 st transmission control part is set to a representative wavelength of the exposure light transmitted through the transmission part
Satisfy the requirement of
And the light transmittance Tf of the 1 st transmission control part is more than or equal to 5 percent and less than or equal to 60 percent.
6. The method of manufacturing a photomask according to claim 1 or 2, wherein the phase difference of the exposure light transmitted through the 1 st transmission control part is set to a representative wavelength of the exposure light transmitted through the transmission part
Satisfy the requirement of
7. The method of manufacturing a photomask according to claim 1 or 2, wherein the phase difference of the exposure light transmitted through the 1 st transmission control part is set to a representative wavelength of the exposure light transmitted through the transmission part
Satisfies 150
And the light transmittance Tf is more than or equal to 5 percent and less than or equal to 60 percent.
8. The method of manufacturing a photomask according to claim 1 or 2, wherein the 2 nd film is a semi-transparent film that partially transmits exposure light.
9. The method of manufacturing a photomask according to claim 1 or 2, wherein the light is exposed to the light transmitted through the light-transmitting portionA representative wavelength of light, a phase difference of the exposure light transmitted through the 2 nd transmission control part
Satisfy the requirement of
10. The method of manufacturing a photomask according to claim 1 or 2, wherein the phase difference of the exposure light transmitted through the 2 nd transmission control part is set to be a representative wavelength of the exposure light transmitted through the transmission part
Satisfy the requirement of
And the light transmittance Tf is more than or equal to 5 percent and less than or equal to 80 percent.
11. The method of manufacturing a photomask according to claim 1 or 2, wherein the phase difference of the exposure light transmitted through the 2 nd transmission control part is set to be a representative wavelength of the exposure light transmitted through the transmission part
Satisfy the requirement of
And the light transmittance Tf is more than or equal to 5 percent and less than or equal to 60 percent.
12. The method of manufacturing a photomask according to claim 1 or 2, wherein the 2 nd thin film is a light-shielding film.
13. A photomask having a pattern for transfer including a light-transmitting portion, a 1 st transmission control portion and a 2 nd transmission control portion on a transparent substrate,
the transfer pattern includes a 1 st film and a 2 nd film having a predetermined exposure light transmittance,
the light-transmitting part is formed by exposing the surface of the transparent substrate,
the 1 st transmission control part has a portion where only the 1 st thin film is formed on the transparent substrate,
the 2 nd transmission control part has a portion where only the 2 nd thin film is formed on the transparent substrate,
the 1 st film is a Si-containing film.
14. The photomask of claim 13 wherein the 1 st film is comprised of a material that is resistant to the etchant of the 2 nd film.
15. The photomask of claim 13 or 14, wherein the 1 st film is a semi-transparent film that partially transmits exposure light.
16. The photomask according to claim 13 or 14, wherein the phase difference of the exposure light transmitted through the 1 st transmission control portion with respect to the representative wavelength of the exposure light transmitted through the transmission portion
Satisfy the requirement of
17. The photomask according to claim 13 or 14, wherein the phase difference of the exposure light transmitted through the 1 st transmission control portion with respect to the representative wavelength of the exposure light transmitted through the transmission portion
Satisfy the requirement of
And the light transmittance Tf is more than or equal to 5 percent and less than or equal to 60 percent.
18. The photomask according to claim 13 or 14, wherein the phase difference of the exposure light transmitted through the 1 st transmission control portion with respect to the representative wavelength of the exposure light transmitted through the transmission portion
Satisfy the requirement of
19. The photomask according to claim 13 or 14, wherein the phase difference of the exposure light transmitted through the 1 st transmission control portion with respect to the representative wavelength of the exposure light transmitted through the transmission portion
Satisfy the requirement of
And the light transmittance Tf is more than or equal to 5 percent and less than or equal to 60 percent.
20. The photomask of claim 13 or 14, wherein the 2 nd film is a semi-transparent film that partially transmits exposure light.
21. The photomask according to claim 13 or 14, wherein the phase difference of the exposure light transmitted through the 2 nd transmission control portion with respect to the representative wavelength of the exposure light transmitted through the transmission portion
Satisfy the requirement of
22. The photomask according to claim 13 or 14, wherein the phase difference of the exposure light transmitted through the 2 nd transmission control portion with respect to the representative wavelength of the exposure light transmitted through the transmission portion
Satisfy the requirement of
And the light transmittance Tf is more than or equal to 5 percent and less than or equal to 80 percent.
23. The photomask according to claim 13 or 14, wherein the phase difference of the exposure light transmitted through the 2 nd transmission control portion with respect to the representative wavelength of the exposure light transmitted through the transmission portion
Satisfy the requirement of
And the light transmittance Tf is more than or equal to 5 percent and less than or equal to 60 percent.
24. The photomask of claim 13 or 14, wherein the 2 nd thin film is a light-shielding film.
25. A method for manufacturing a display device, comprising: a photomask according to the method for manufacturing a photomask of any one of claims 1 to 12 or a photomask of any one of claims 13 to 24 is prepared, and the pattern for transfer is transferred to a transfer-receiving body using an exposure apparatus.
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| JP2015-189040 | 2015-09-26 | ||
| JP2015189040 | 2015-09-26 | ||
| JP2016-144998 | 2016-07-24 | ||
| JP2016144998A JP6726553B2 (en) | 2015-09-26 | 2016-07-24 | Photomask manufacturing method and display device manufacturing method |
| CN201610851465.7A CN106814534B (en) | 2015-09-26 | 2016-09-26 | Method for manufacturing photomask, photomask and method for manufacturing display device |
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| CN113219782A true CN113219782A (en) | 2021-08-06 |
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| CN107861334A (en) * | 2016-09-21 | 2018-03-30 | Hoya株式会社 | The manufacture method of the manufacture method of photomask, photomask and display device |
| JP6259508B1 (en) * | 2016-12-28 | 2018-01-10 | 株式会社エスケーエレクトロニクス | Halftone mask, photomask blank, and method of manufacturing halftone mask |
| JP6963967B2 (en) * | 2017-10-30 | 2021-11-10 | Hoya株式会社 | Pattern drawing method, photomask manufacturing method, and display device manufacturing method |
| US11036129B2 (en) * | 2018-07-31 | 2021-06-15 | Taiwan Semiconductor Manufacturing Company Ltd. | Photomask and method for forming the same |
| TWI787548B (en) * | 2018-10-22 | 2022-12-21 | 日商Ｈｏｙａ股份有限公司 | Photomask, method of manufacturing a photomask, and method of manufacturing an electronic device |
| TWI712851B (en) * | 2018-10-22 | 2020-12-11 | 日商Ｈｏｙａ股份有限公司 | Photomask, method of manufacturing a photomask, and method of manufacturing an electronic device |
| JP2020187246A (en) * | 2019-05-14 | 2020-11-19 | Jsr株式会社 | A method for manufacturing an electronic device using a radiation-sensitive resin composition, an electronic device provided with a radiation-sensitive resin composition, an insulating film and an insulating film. |
| CN113568270B (en) * | 2020-04-28 | 2024-09-27 | 株式会社Sk电子 | Method for manufacturing photomask |
| JP6838677B1 (en) * | 2020-05-11 | 2021-03-03 | 信越半導体株式会社 | Dry etching method for semiconductor substrates and dry etching method for silicon oxide film |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20180099601A (en) | 2018-09-05 |
| JP2017062462A (en) | 2017-03-30 |
| TW201725444A (en) | 2017-07-16 |
| KR101895122B1 (en) | 2018-09-04 |
| TWI635355B (en) | 2018-09-11 |
| KR20170037820A (en) | 2017-04-05 |
| CN106814534A (en) | 2017-06-09 |
| JP7276778B2 (en) | 2023-05-18 |
| KR102413012B1 (en) | 2022-06-24 |
| JP2020154338A (en) | 2020-09-24 |
| CN106814534B (en) | 2021-06-01 |
| JP6726553B2 (en) | 2020-07-22 |
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