JPH04232257A - Vapor deposition method and equipment - Google Patents

Abstract

PURPOSE:To execute stable and good quality vapor deposition to a plate-like member having a large area by introducing partially plasma stream at every segmented area in order in a vaporizing raw material disposed in the vicinity of a vapor-depositing treatment stage arranged on a base body so as to vaporize the stream. CONSTITUTION:In a vapor-depositing treatment furnace 1, the vaporizing raw material 4 is housed in a hearth 5 in the vicinity of the vapor-depositing treatment stage S arranging the base body 2 to be an object forming film and disposed while opposing it. This vaporizing raw material 4 is irradiated with the plasma stream P from a plasma gun 3 and vaporized, and this vaporized particles are deposited on the base body 2 to form the film. In the above- mentioned vapor-depositing method, the plasma introducing means 6 is disposed at the hearth 5 side, and the above-mentioned plasma stream P is partially introduced in order or in continuous at respective prescribed segment areas B1-B4 in the vaporizing raw material 4 to vaporize the stream. Then, it is desirable to introduce a part of the plasma stream P onto the base body 2 side synchronously with the above-mentioned plasma introducing means 6 with a base body side plasma introducing means 7.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a vapor deposition method and apparatus, and more particularly to a vapor deposition method and apparatus effective for forming a uniform coating on a large plate member using plasma.

0002

[Prior Art] Generally, a method for forming a uniform film on an object is to evaporate raw material on a hearth in a deposition processing furnace maintained in a predetermined vacuum environment, and then apply a film to the object. Vacuum deposition techniques have been widely adopted.

[0003] In such vacuum deposition technology, a hollow cathode method and a high frequency excitation method have been introduced in order to improve film quality, and a vapor deposition film based on a plasma flow caused by glow discharge is usually performed.

However, this method is not efficient for large-area substrates such as window glass for architectural buildings, glass for automobiles, and glass for large displays.
It has been difficult to deposit high quality coatings.

[0005] For example, in the hollow cathode method, the cathode part is exposed to plasma, which causes the cathode part to melt or deform. There is a technical issue in that ions may flow back toward the cathode, making it difficult to safely discharge large amounts of power for long periods of time.

On the other hand, in the high frequency excitation method, a ring-shaped antenna or the like is used to generate the discharge, and a metal plate or the like must be placed on the substrate side on which the film is to be formed in order to apply a bias, which requires a large area. Not only is it difficult to create a uniform discharge area over a wide area, but the discharge is also unstable because it is affected by the gas pressure in the vacuum processing furnace, and it is difficult to create a continuous and stable discharge area on a large-area substrate. There is a technical problem in that it is difficult to perform vapor deposition at high speed.

[0007] In order to solve such technical problems,
The applicant deforms the arc discharge plasma flow generated by arc discharge into a sheet shape, for example in the lateral direction, and then bends and guides the sheet plasma onto an evaporation raw material hearth placed below the sheet plasma. has already provided a technique in which a raw material for evaporation is evaporated and a film is formed on a substrate, which is an object on which the film is formed, placed above the raw material for evaporation (see Japanese Patent Laid-Open No. 2-101160).

[0008]

[Problems to be Solved by the Invention] However, even if the arc discharge plasma flow from the plasma gun is deformed into a sheet shape and the sheet plasma deformed into a sheet shape is simply guided to the evaporation raw material hearth side, the sheet plasma will not change. The evaporation material tends to converge by the time it reaches the hearth area, and it is difficult to maintain its flat state. Therefore, the evaporation area of the evaporation material by the sheet plasma generated from one plasma gun is sufficiently wide. A new technical issue has arisen: the inability to secure

For this reason, when forming a film on a large-area substrate, it is necessary to install a plurality of plasma guns in parallel.
It is necessary to arrange the sheet plasmas from each plasma gun adjacently in substantially the same plane to ensure the width direction dimension of the entire sheet plasma, resulting in a situation where the apparatus itself becomes unnecessarily complicated.

Furthermore, in the conventional vapor deposition method, there is a limit to the improvement of the film quality of the substrate on which the film is formed, and there is also a technical problem of wanting to improve the film quality.

[0011] The present invention was made to solve the above-mentioned technical problems, and one purpose is to sufficiently widen the evaporation area of the evaporation raw material by the plasma flow generated from one plasma gun. Therefore, even if a large-area plate-like member is the object of film formation, stable vapor deposition can be performed on a large-area plate-like member at high speed without unnecessarily increasing the number of plasma guns. Another object of the present invention is to provide a vapor deposition method and apparatus that can improve the quality of the film on the substrate on which the film is to be formed. .

[Means to solve the problem]

That is, in the vapor deposition method according to the present invention, an evaporation source is placed in advance in the vicinity of a evaporation processing stage in a evaporation processing furnace, and a plasma flow from a plasma gun is applied to each predetermined divided region of the evaporation material. The evaporation raw material is evaporated sequentially or continuously in each divided area, and a film of evaporated particles is formed on the substrate surface on which the film is to be formed, which is placed on the vapor deposition stage. It is characterized by the fact that

[0013]The apparatus invention embodying this method invention, for example, as shown in FIG.
In a vapor deposition apparatus that evaporates the evaporation raw material 4 to form a coating of evaporated particles 4a on the surface of the substrate 2 located in the evaporation processing stage S, one or more plasma streams P directed into the evaporation processing stage S are generated. a plasma gun 3, and a hearth 5 in which the evaporation raw material 4 is accommodated near the evaporation processing stage S and serves as an anode for discharge and evaporates the evaporation raw material (4) with the plasma flow (P) from the plasma gun (3). , characterized by comprising a plasma attracting means 6 for sequentially or continuously attracting the plasma flow P generated from the plasma gun 3 to each predetermined divided area of the evaporation raw material 4 in the hearth 5. be.

In such a technical means, the vapor deposition processing furnace 1 may be of a type that vaporizes the substrate 2 in a stationary state, or may be of a so-called in-line type that vaporizes the substrate 2 while being carried in and transported. However, from the viewpoint of improving the vapor deposition efficiency and the uniformity of the thickness of the vapor-deposited film, the in-line type is preferable. In this case, the degree of vacuum in the vapor deposition processing furnace 1 is 10-3 Torr.
It is preferable to keep it at or below a certain level. Also,
The substrate 2 within the vapor deposition stage S may be placed either horizontally or vertically.

The discharge gas introduced into the vapor deposition processing furnace 1 is not particularly limited, but inert gases such as Ar and He are preferable. Further, in addition to the inert gas such as Ar, O2, N2, etc. may be added as a reactive gas to the gas atmosphere in the vapor deposition processing furnace 1.

The material of the substrate 2 on which the vapor-deposited film is formed is not limited to glass, plastic, metal, etc., but since the substrate 2 does not need to be heated, it may be a material with low heat resistance, For example, it can be sufficiently applied to plastic plates or films, glass plates having an organic polymer film in advance, glass substrates for liquid crystal color displays having a color filter film, and the like.

Further, the number of plasma guns 3 is normally one, but when a large substrate 2 is subjected to vapor deposition processing, a plurality of plasma guns 3 may be provided. In this case, the number of plasma guns 3 and the arrangement pitch can be appropriately selected depending on the size of the substrate 2 on which the film is to be formed and the capacity of the plasma attracting means 6.

The plasma guns 3 may be disposed at one or more locations along the horizontal or vertical direction of the vapor deposition processing furnace 1, but the plasma guns 3 may be disposed in one or more locations along the horizontal or vertical direction of the vapor deposition processing furnace 1. From this point of view, one or more plasma guns 3 are disposed in opposing parts of the vapor deposition processing furnace 1, and the beam center of the plasma gun 3 on one side and the beam center of the plasma gun 3 on the other side are alternately arranged. It is preferable to arrange the

Furthermore, the plasma gun 3 may be installed either outside or inside the deposition furnace 1, but in consideration of ease of replacement of the plasma gun 3, a partition valve is installed outside the deposition furnace 1. It is preferable to attach the plasma gun 3 removably via the holder.

Furthermore, the specific configuration of the plasma gun 3 may be any suitable one as long as it can generate arc discharge or the like between it and the anode (usually the hearth 5 also serves) and generate a high-density plasma flow. Although there is no problem with selection, a composite cathode type plasma gun that generates a plasma flow by arc discharge, a pressure gradient type plasma gun, or a combination of both (see Vacuum Vol. 25, No. 10) are preferred.

[0021] Here, the composite cathode type plasma gun has a coil-shaped or pipe-shaped auxiliary cathode made of a high-melting point metal such as W, Ta, or Mo, which has a small heat capacity, and a main cathode made of LaB6. The initial discharge is concentrated on the cathode and used to heat the main cathode, so that the main cathode acts as the final cathode for arc discharge, and the auxiliary cathode is
The main cathode is heated to 1,500 to 1,800°C before it reaches a high temperature of 500°C or more, which affects its lifespan, and the main cathode is heated to a state where it can emit a large amount of electrons, avoiding further temperature rise of the auxiliary cathode. It has the advantage of being

[0022] In addition, the pressure gradient type plasma gun has an intermediate electrode interposed between the cathode and the anode, and the cathode region is heated to 1 Torr.
On the other hand, the anode region is maintained at about 10-3 Torr, and the cathode is not damaged by ion backflow from the anode region, and compared to a discharge type without an intermediate electrode, discharge electrons are It has the advantage that the gas efficiency of the carrier gas for creating the current is dramatically high, and large current discharge is possible.

Therefore, if a plasma gun is constructed by combining the above-mentioned composite cathode type plasma gun and pressure gradient type plasma gun, the above-mentioned advantages can be obtained at the same time, which is very useful as a plasma gun of the present invention. preferable.

The evaporation raw material 4 used in the present invention may be solid or liquid, such as metals, alloys, oxides, borides, carbides, silicides, nitrides, or any of these. A mixture containing one or more types can be used, but in consideration of ease of handling when placed vertically or horizontally, solid evaporation raw materials in the form of rod-shaped blocks having sublimation properties are preferred. Although not particularly limited, if an evaporation raw material made of a predetermined metal oxide is used, a transparent conductive film with low resistance and high transmittance (for example, an indium oxide film containing tin,
This makes it possible to obtain a tin oxide film containing antimony, a zinc oxide film containing aluminum, etc.).

The hearth 5 may be modified in design as long as it accommodates the evaporation source 4 and can evaporate the evaporation source 4 within a range that substantially corresponds to the film forming area on the substrate 2. In this case, the evaporation raw material 4 accommodated in the hearth 5 may be of a single structure or may be divided into a plurality of parts. Further, the shape of the hearth 5 may be circular, square, oval, or any other appropriate shape.

[0026] The hearth 5 needs to be provided with a cooling water supply means to prevent the melting and supporting parts of the hearth 5 from becoming high temperature, and also to provide cooling water supply means for evaporating the evaporation raw material 4. In order to supply sufficient power, it is necessary to make the hearth 5 an anode for arc discharge.

Furthermore, regarding the arrangement structure of the hearth 5, although it may be fixedly arranged within the vapor deposition processing furnace 1,
From the point of view of effectively using the evaporation raw material 4,
It is preferable to design the hearth 5 so as to guide the plasma flow P throughout the entire area within the hearth 5. For example, the hearth 5 position may be moved depending on the degree of consumption of the evaporation raw material 4, or the plasma attracting means 6 may be designed to guide the plasma flow P to the entire area within the hearth 5. The design can be changed as appropriate, such as by adding a function that makes it variable.

Furthermore, the plasma attracting means 6 is one that forms a magnetic field to the extent that the plasma flow P is attracted sequentially or continuously in each divided area corresponding to the width dimension of the plasma flow P from the plasma gun 3. If so, the design can be changed as appropriate, such as by appropriately switching and selecting a plurality of electromagnetic induction coils or by moving the permanent magnet at a predetermined timing.

Furthermore, in order to ensure a wide evaporation region of the evaporation raw material 4, it is preferable to ensure a large width dimension of the plasma flow P from the plasma gun 3. When designing in this manner, the plasma gun 3 The plasma flow P may be transformed into a sheet shape by a sheet plasma forming means.

Here, the above-mentioned sheet plasma forming means may be one that deforms the plasma flow generated by the plasma gun 3 into a sheet shape along the horizontal or vertical direction, by using a magnet, coil, etc. The design may be changed as appropriate, such as by forming a magnetic field that crushes the magnetic field from both sides. When sheet plasmas generated from a plurality of plasma guns 3 are arranged adjacent to each other in substantially the same plane to form a large-area sheet plasma, in order to maintain the uniformity of the magnetic field in the width direction of the sheet plasma, It is preferable to arrange another set of sheet plasma forming means, such as magnets, on the outside of both ends of the plasma.

Furthermore, when the plasma gun 3 and the hearth 5 are set relatively far apart, from the viewpoint of efficiently guiding the plasma flow P to the vicinity of the hearth 5, it is necessary to direct the plasma flow P to the hearth 5. Preferably, the design is such that an induction means such as an induction coil is provided to which a magnetic field is applied to induce the magnetic field to a nearby position.

Furthermore, although the plasma inducing means 6 can be installed anywhere inside or outside the vapor deposition furnace 1, if it is installed outside the vapor deposition furnace 1, it can be installed regardless of whether it is inside the vapor deposition furnace 1.
By changing the type and shape of electromagnetic induction coils and permanent magnets,
This is preferable because it becomes possible to change the distance between the electromagnetic induction coil or the like and the evaporation source 4, and it becomes possible to easily adjust the working magnetic field for inducing the plasma flow P.

Furthermore, from the viewpoint of further improving the film forming performance on the two surfaces of the substrate, the evaporation raw material 4 is installed in advance near the evaporation processing stage S in the evaporation processing furnace 1, and the plasma from the plasma gun 3 is The evaporation method is based on the premise that the flow P is induced to the side of the evaporation source 4 to evaporate the evaporation source 4, and a coating of evaporation particles 4a is formed on the surface of the substrate 2 on which the coating is to be formed, which is placed in the evaporation processing stage S. , a part of the plasma flow P from the plasma gun 3 may be drawn toward the substrate 2 side of the vapor deposition processing stage S.

[0034] As an embodiment of the apparatus embodying this method invention, on the opposite side of the hearth 5 with the vapor deposition processing stage S sandwiched therebetween,
A substrate-side plasma attracting means 7 for attracting a part of the plasma flow P to the substrate 2 side of the vapor deposition stage S may be provided.

In this case, as a specific embodiment of the substrate-side plasma attracting means 7, a permanent magnet, an electromagnetic induction coil, or the like is used to generate a magnetic field that attracts a part of the plasma flow P toward the substrate 2 side. Things can be mentioned. Here, regarding the permanent magnet, a long and thin one may be fixedly installed according to the width dimension of the base body 2, or it may be moved at appropriate timing, or it may be moved due to the electromagnetic induction coil. Alternatively, a plurality of them may be provided and switched at the same time or at appropriate timing.

In particular, in the case of a type using a plasma attracting means 6 that induces the plasma flow P, the plasma flow is placed on the opposite side of the hearth 5 across the vapor deposition stage S in synchronization with the plasma attracting means 6. It is preferable to provide a substrate-side plasma inducing means 7 in which a part of P is sequentially or continuously drawn to the substrate 2 side of the vapor deposition processing stage S. A configuration similar to that of the attraction means 6 can be adopted.

[0037]

[Operation] According to the above-mentioned technical means, for example, the arc discharge plasma flow generated from the plasma gun 3 (compared to the conventional glow discharge type plasma, the plasma density is 5
0 to 100 times higher, the degree of ionization of the gas is several tens of percent, and the ion density, electron density, and neutral active species density are also very high).
However, when the high-density plasma as described above is focused on the evaporation source 4, compared to the conventional evaporation method, the
It is possible to take out a very large number of particles from the evaporation raw material 4 by about 10 times.

In such an operation process, the plasma attracting means 6 sequentially or continuously generates a magnetic field for inducing the plasma flow P in each predetermined divided area (for example, four divided areas B1, B2, B3, B4). Therefore, the plasma flow P heading towards the hearth 5 side is attracted by the magnetic field sequentially or continuously, and the evaporation raw material 4 in the hearth 5 is divided into divided areas B1,
The plasma flow P is supplied to B2, B3, and B4, and as a result, the plasma flow P is supplied to the entire area of the evaporation raw material 4 in the hearth 5.

After that, the evaporation raw material 4 in the hearth 5 is transferred to the divided regions B1, B2, B3, and B4 to which the plasma flow P is supplied.
The evaporated particles 4a are evaporated while being diffused to the surroundings, and the evaporated particles 4a head toward the substrate 2 placed on the vapor deposition stage S and adhere to the surface of the substrate 2.

At this time, most of the atmospheric gases such as oxygen and argon take highly reactive ion or neutral active states, and in addition, the evaporated particles 4a also pass through the plasma before reaching the substrate 2. As a result, it becomes a highly reactive neutral active species. As a result, the reactivity on the substrate 2 increases, and high-speed film formation can be achieved without heating the substrate 2.

Further, the substrate-side plasma attracting means 7 guides a part of the plasma flow P from the plasma gun 3 to the surface of the substrate 2, increases the activity of the plasma, and smoothly progresses the film formation by the evaporated particles 4a.

In particular, if the substrate-side plasma attracting means 7 generates a magnetic field that sequentially or continuously attracts a part of the plasma flow P to the substrate 2 side in synchronization with the sheet attracting means 6, the hearth The plasma flow P is supplied to a predetermined divided area (for example, B1) of the evaporation raw material 4 of No. Since the plasma is supplied to areas on two surfaces of the substrate corresponding to the area, the activity of the plasma can be increased in the area where film formation is directly proceeding.

[0043]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below based on embodiments shown in the accompanying drawings. 2 and 3 show an embodiment of a vapor deposition apparatus to which the present invention is applied.

In the figure, reference numeral 10 denotes a so-called in-line type vapor deposition processing furnace, which is maintained in a predetermined vacuum environment and in which glass substrates G to be film-formed are sequentially transported to a vapor deposition processing stage S. A transport chamber 11 that defines a transport path, and a film forming chamber 1 that is grounded at a location corresponding to the vapor deposition processing stage S of this transport chamber 11.
2 (in this embodiment, non-magnetic stainless steel that does not block the magnetic field is used).

Note that the film forming chamber 12 is provided with a gas inlet and a vacuum exhaust port (both not shown), and a reaction gas (O2 in this embodiment) is introduced through the gas inlet. A vacuum pump is connected to the vacuum exhaust port through a duct, and the inside of the film forming chamber 12 is 10-3.
The degree of vacuum is maintained at approximately Torr.

Further, reference numeral 20 denotes a conveyance carrier for laterally holding and sequentially conveying the glass substrate G on which a film is to be formed on each vapor deposition processing stage S;
By driving force transmitted from a drive motor (not shown), the material is guided and transported along guide rails (not shown) installed on both sides of the transport chamber 11.

Further, reference numeral 30 is a hearth in which an evaporation raw material (in this embodiment, tin-doped indium oxide [hereinafter referred to as ITO]) is housed, and a glass substrate G The glass substrate G is disposed horizontally along the width direction of the glass substrate G with a length dimension substantially corresponding to the width direction dimension of the glass substrate G.

Further, reference numeral 40 denotes the film forming chamber 12.
This is a plasma gun installed on one side wall of the plasma gun 40, and a sheet plasma forming device 50 is provided around the plasma gun 40 to crush the plasma flow P from the plasma gun 40 into a sheet shape in the horizontal direction. This sheet plasma forming apparatus 50 is configured to flatten the plasma flow from the plasma gun 40 in the vertical direction using a magnetic field generated by a permanent magnet 51 having a pair of N poles facing each other. Incidentally, in the sheet plasma forming apparatus 50, a similar magnetic field may be formed using a pair of electromagnetic induction coils instead of the permanent magnet 51.

In this embodiment, the plasma gun 4
A ring-shaped support frame 52 whose center position coincides with the axis of 0 is disposed, and an induction coil 53 is wound around this support frame 52, and the magnetic field of the induction coil 53 crushes it into a flat state. The sheet plasma PS is guided to a position in front of the hearth 30.

Further, reference numeral 60 is a sheet plasma attracting device that guides the formed sheet plasma PS to the hearth 30 site. The sheet plasma induction device 60 according to this embodiment is attached via a mounting bracket 65 to the outer side of the bottom wall of the film forming chamber 12 corresponding to directly below the hearth 30, and corresponds to the ITO block M inside the hearth 30. Divide the area into, for example, six areas, and divide each area into areas a to f.
Six electromagnetic induction coils 61 (specifically 61
a to 61f) are arranged in parallel. As shown in FIG. 4, each electromagnetic induction coil 61 is connected to a power source 63 via a rotary switch 62 provided with six switching contacts.
When the selected electromagnetic induction coil 61 is energized by switching the rotary switch 62 at appropriate timing, the selected electromagnetic induction coil 61
A magnetic field directed to the side is generated to focus the sheet plasma PS while dispersing it in the width direction of the evaporation source material 31.

Further, reference numeral 70 denotes an opposing sheet plasma attracting device that guides a part of the sheet plasma PS toward the glass substrate G side. The facing sheet plasma induction device 70 according to this embodiment is attached via a mounting bracket 75 to the outside of the upper wall of the film forming chamber 12 located above the vapor deposition processing stage S, and the ITO in the hearth 30
Six electromagnetic induction coils 71 (specifically, 71a to 71f) are arranged in parallel corresponding to each of the divided regions a to f of the block M. As particularly shown in FIG. 4, each electromagnetic induction coil 71 is connected to a power source 73 via a rotary switch 72 provided with six switching contacts, and the rotary switch 72 is synchronized with the rotary switch 62. By switching, the selected electromagnetic induction coil 71
When energized, a magnetic field directed toward the selected electromagnetic induction coil 71 is generated, and the sheet plasma PS is focused toward the glass substrate G.

Furthermore, reference numeral 90 denotes an evaporation path regulating shield plate disposed in the film forming chamber 12 and guiding the evaporated particles Ma of the ITO block M from the hearth 30 to the evaporation processing stage S side. It is arranged to expand from the evaporation processing stage S toward the vapor deposition processing stage S side. The evaporation path regulating shield plate 90 disposed on the plasma gun 40 side has an opening 90a through which the plasma flow from the plasma gun 40 passes.

Next, the operation of the vapor deposition apparatus according to this embodiment will be explained. When a start switch (not shown) is turned on, the transport carrier 20 holding the glass substrate G begins to move within the transport chamber 11 at a predetermined speed, and the plasma gun 40 of the film forming chamber 12 is activated to generate plasma. A high-density plasma flow is generated from the gun 40 by arc discharge.

After that, the sheet plasma forming apparatus 50
After the plasma flow is crushed by the sheet plasma PS along the horizontal direction, the sheet plasma PS is guided to this side of the hearth 30 by the induction coil 53.

In this state, especially as shown in FIG. 4, each electromagnetic induction coil 61 of the sheet plasma induction device 60
a to 61f are sequentially excited by the rotary switch 62,
The sheet plasma PS induced by the induction coil 53 is sequentially focused in a high-density state in each of the divided regions a to f of the ITO block M in the hearth 40 . Then, the ITO blocks M in the hearth 30 are sequentially evaporated by the sheet plasma PS extending in the horizontal direction for each segmented area a to f, and evaporated particles Ma
diffuses from the surface of the hearth 30 toward the surroundings.

At this time, some of the evaporated particles Ma head directly toward the glass substrate G entering the vapor deposition stage S, as shown by arrow A in FIG. As shown in , the light is reflected or deposited on the evaporation path regulating shield plate 90 and then re-evaporated to proceed to the vapor deposition processing stage S. Therefore, in the vapor deposition processing stage S, the transport carrier 20
A film of evaporated particles Ma is uniformly formed over the entire width direction of the glass substrate G held in the glass substrate G.

In particular, in this embodiment, as shown in FIG.
Because it is excited in synchronization with The activity of the plasma increases,
It was confirmed that the quality of the film formed by the evaporated particles Ma was maintained better.

Incidentally, as a modification of the sheet plasma induction devices 60 and 70, for example, the one shown in FIG. 5 can be mentioned. This allows permanent magnets 66 and 76 of sizes corresponding to predetermined divided areas of the ITO block M to be reciprocally moved by an advancing and retracting mechanism 67 (opposing sheet plasma induction device 70 side is omitted), and reciprocating at appropriate timing. By moving the magnetic field of the permanent magnet 66 over the entire area of the ITO block M, and in synchronization with this, the magnetic field of the permanent magnet 76 is moved.
The magnetic field is also moved, and the same effect as in the embodiment can be obtained.

The forward/backward moving mechanism 67 according to this modification includes, for example, a ball screw shaft 82 coupled to a drive motor 81 capable of forward and reverse rotation, and a nut member 83 fitted to the ball screw shaft 82 via a ball. On the other hand, a holder plate 84 holding the permanent magnet 66 is slidably supported along a guide shaft 85, and a nut member 83 is fixed to the lower part of the holder plate 84.

[0060]

[Effect of the invention] As explained above, claims 1 to 3
According to the described vapor deposition method and apparatus, a sufficiently wide evaporation region of the evaporation material can be secured by sequentially or continuously drawing the plasma flow from the plasma gun along the length direction of the evaporation material. Therefore, a high-quality vapor deposition film with a uniform thickness can be formed quickly and efficiently over the entire area of a large-area substrate without unnecessarily increasing the number of plasma guns.

Further, according to the method described in claim 4, since the plasma flow is induced into the substrate region, the activity of the plasma on the surface of the substrate on which the coating is formed is increased, and the quality of the coating on the substrate surface is improved. It can be improved to something better. especially,
If a substrate-side plasma attracting means that covers a large area is used, a high-quality film can be formed over a large area.

In particular, according to the vapor deposition apparatus according to claim 3,
Since a part of the plasma flow generated from the plasma gun is directed to the base region corresponding to the evaporation region of the evaporation raw material, the plasma activity of the film formation region where the film formation operation is actually performed can be directly controlled. It is possible to improve the film quality of the film very well.

[Brief explanation of the drawing]

FIG. 1 is an explanatory diagram schematically showing a vapor deposition apparatus according to the present invention.

FIG. 2 is an explanatory cross-sectional view showing an embodiment of a vapor deposition apparatus according to the present invention.

FIG. 3 is a perspective view of the main part of FIG. 2;

FIG. 4 is an explanatory diagram showing the operating state of the vapor deposition apparatus according to the example.

FIG. 5 is an explanatory diagram showing a modification of the sheet plasma induction device.

[Explanation of symbols]

1 Vapor deposition processing furnace 2 Base 3 Plasma gun 4 Evaporation raw material 5 Hearth 6 Plasma attraction means 7 Base-side plasma attraction means

Claims (4)

[Claims] Claim 1: An evaporation raw material (4) is installed in advance near the evaporation processing stage (S) in the evaporation processing furnace (1),
Plasma flow (P) from the plasma gun (3) is induced in each predetermined divided area of the evaporation raw material (4) sequentially or continuously, and the evaporation raw material (4) is divided into each divided area sequentially or continuously. The evaporated particles (4a) are then evaporated onto the surface of the substrate (2) on which the film is to be formed, which is placed in the vapor deposition stage (S).
A vapor deposition method characterized in that a film is formed by: 2. A substrate (2) on which a coating is to be formed is carried into a vapor deposition processing stage (S) in a vapor deposition processing furnace (1), the evaporation raw material (4) is evaporated, and the substrate is placed on the vapor deposition processing stage (S). In a vapor deposition apparatus configured to form a coating of evaporated particles (4a) on the surface of a substrate (2), the vapor deposition processing furnace (1)
One or more plasma guns (3) in which an inward plasma flow (P) is generated, and an evaporation raw material (4) stored in the vicinity of the vapor deposition stage (S), which serves as an anode for discharge. ) and a hearth (5) that evaporates the evaporation raw material (4) with a plasma flow (P) from the hearth (5), and a hearth (5) that evaporates the evaporation raw material (4) with the plasma flow (P) from the plasma gun (3). ) A vapor deposition apparatus characterized by comprising: (6) a plasma attracting means (6) for sequentially or continuously attracting plasma to each predetermined divided area. 3. In the apparatus according to claim 2, a part of the plasma flow (P) is provided on the opposite side of the hearth (5) across the vapor deposition stage (S) in synchronization with the plasma inducing means (6). a substrate-side plasma attracting means (7) which sequentially or continuously attracts the plasma to the substrate (2) side of the vapor deposition processing stage (S);
) is provided. 4. An evaporation raw material (4) is installed in advance near the evaporation processing stage (S) in the evaporation processing furnace (1),
The plasma flow (P) from the plasma gun (3) is attracted to the evaporation raw material (4) side to evaporate the evaporation raw material (4), and the substrate on which the film is to be formed is placed on the evaporation treatment stage (S). (2) In a vapor deposition method for forming a coating of evaporated particles (4a) on a surface, a part of the plasma flow (P) from the plasma gun (3) is induced toward the substrate (2) side of the vapor deposition processing stage (S). A vapor deposition method characterized in that