JPH04198480A - Apparatus for producing functional deposited film - Google Patents

Abstract

PURPOSE:To easily form a functional film of amorphous Si, etc., having high quality at a high yield on the surface of a metallic substrate by heating a large-sized metallic plate in a vacuum chamber and generating a discharge by a high-frequency power source between this plate and a discharge electrode while supplying gaseous raw materials. CONSTITUTION:The large-sized substrate 103, such as stainless steel sheet, is installed in a vacuum chamber 101 and the inside of the vacuum chamber 101 is evacuated to a reduced pressure from a discharge port 111. The volume of a film forming space 104 for cracking the gaseous raw materials is so regulated as to attain about 10% of the volume in the vacuum chamber. The substrate 103 and the gaseous raw materials consisting of a gaseous mixture composed of SiH4 and H2 supplied from a gas supply port 107 are heated by a lamp heater 102 and a heater 106. The gaseous raw materials flow in an arrow direction in the film forming space 104 between the substrate 103 and the discharge electrode 105 from an inlet 107. The discharge is simultaneously generated in the film forming space 104 by a high-frequency power source 112 and the functional deposited film consisting of high-purity amorphous Si is uniformly formed on the surface of the large-area stainless steel substrate 103 by the cracking of the SiH4.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention is useful for functional deposited films, particularly for semiconductor devices, thin film semiconductor elements, line sensors for human imaging, imaging devices, electrophotographic photoreceptor devices, etc. The present invention relates to an apparatus suitable for producing functional deposited films, particularly large area thin film semiconductor devices such as photovoltaic devices.

2. Description of the Related Art Conventionally, for forming functional films, particularly semiconductor thin films, appropriate film forming apparatuses have been employed depending on desired electrical and physical characteristics and applications. These devices include, for example, plasma C
VD equipment, reactive sputtering equipment, ion plating equipment, optical CVD equipment, thermal GVDVD equipment O(:V
There are D devices, MBE devices, etc., and several types of these devices are adopted as suitable devices for manufacturing semiconductor devices, and are manufactured and sold commercially. However, even with plasma GvD, which is the most commonly used method, the electrical and physical properties of the deposited film obtained, especially the long-term stability and high reproducibility required for manufacturing semiconductor devices, are not satisfactory. This cannot be said to be satisfactory, and it is thought that one of the reasons for this unsatisfactoriness is the influence of desorption gas diffusing from the full vacuum apparatus into this film forming space during the production of deposited films. Effective methods to solve such problems include, for example, C,C,Tsaj, J,C,Knjghts,
et al., J. Non-Cryst.

Sol, 59/60.73] (1983), C,C,
Tsai, J.C., Knights.

M. J. Thompson, 1 bid 6645 (
+984), S. Tsuda.

et al. J., 1. Appl, Phys.
26 [1], 33 (1987), etc., a plasma CVD apparatus using a so-called ultra-high vacuum chamber is described. The description states that the degree of vacuum in the film forming chamber is approximately 1.
This is a method for producing a deposited film in which the incorporation of impurities is suppressed by forming the film after reaching 0"" Torr. However, a device using such a high vacuum chamber,
For example, plasma CVD equipment requires a lot of money for its exhaust system, chamber itself, etc., and is not suitable for mass production, which increases management items such as equipment costs and operating costs, which increases the manufacturing cost of semiconductor devices. had a problem that needed solving.

In US Pat. No. 4,608,943, it is reported that profiling in the film thickness direction has become possible in a high frequency CVD apparatus having a plurality of Darrow discharge vessels. However, the depressurization of the film forming space and the vacuum container is performed as a whole and not separately.

Problems to be Solved by the Invention It is an object of the present invention to provide a novel deposited film manufacturing apparatus that solves the problems in the conventional deposited film manufacturing apparatus described in -V. In other words, the main purpose of the present invention is to continuously form a film over a large area on a high-quality, highly conductive, and flexible substrate with a reduced concentration of impurities, without enlarging the equipment. It is an object of the present invention to provide a deposited film manufacturing apparatus that can easily mass-produce a deposited film with a high yield and with extremely little variation in film thickness depending on the position.

Means for Solving the Problems In order to solve the above-mentioned problems in the conventional deposited film manufacturing apparatus, the present invention provides at least one vacuum vessel and a film forming space within the vacuum vessel for decomposing source gas. In a functional deposited film production apparatus having a vacuum vessel, the vacuum vessel and the film forming space are simultaneously operated by one exhaust system, but each has a function of adjusting the exhaust speed in a manner that can be controlled independently. This device actively exhausts the desorption gas inside, prevents the desorption gas from diffusing into the film forming space, and thereby reduces the contamination of impurities caused by the desorption gas into the deposited film during the production of the deposited film.

It is also possible to diffuse the desorption gas in the film-forming space to the outside of the film-forming space by setting the pressure of the source gas in the film-forming space at the time of film-forming production to be slightly higher than the pressure outside the film-forming space. Furthermore, it is also possible to actively exhaust the desorption gas in the vacuum container by introducing gas outside the film-forming space from a gas inlet that is separate from the source gas inlet. Further, in an apparatus in which a plurality of vacuum vessels are connected and a plurality of functional deposited films are laminated using a flexible or non-flexible strip material as a base, a gas gate portion that interconnects the vacuum vessels is also used. It is also possible to separate each vacuum container by installing a gas gate and separating the adjacent vacuum containers using a gas gate, thereby suppressing the influence of impurity gas on the film forming space. These features have made it possible to improve the stability and reproducibility of discharge in the film-forming space.

In addition, in the manufacturing apparatus according to the present invention, it is possible to control and adjust the pressure and flow rate in the film forming space that can decompose the source gas separately from the pressure in the vacuum container. It is now possible to arbitrarily select the flow rate and pressure.

The volume ratio of the film forming space to the vacuum container is j% or more -1
It is preferably 10% or less. If it is smaller than this range, mass productivity will be extremely reduced, or the device itself will be large and the device cost will be extremely high. On the other hand, if it is larger than this range, the influence of the desorbed gas from within the deposition space on the deposited film will be greater, or the volumes of the vacuum container and the deposition space will be relatively close to 1, resulting in A problem arises in that the wall surface of the vacuum container approaches the film-forming space, and the film-forming space is strongly influenced by the desorption gas of the vacuum container. In addition, by preheating the raw material gas before introducing it into the film forming space, the generation of particulate matter such as polysilane in the film forming space is suppressed, and the reproducibility of the film quality characteristics of the functional deposited film is improved. Furthermore, the manufacturing yield of semiconductor devices and the like is improved. Additionally, by introducing a gas such as high-temperature hydrogen or argon before introducing the raw material gas into the film formation space, cleaning of the entire vacuum chamber is facilitated, further reducing impurities mixed into the film during the production of the deposited film. It became possible.

The present invention will be explained below using the figures.

FIG. 1 is a schematic diagram of an apparatus example 1 of the functional deposited film manufacturing apparatus of the present invention, and the present invention is not limited to this apparatus diagram.

100 Schematic diagram of the whole 101 Vacuum vessel 102 Lamp heater for heating the substrate 103 Substrate 104 This is the film forming space in which the raw material gas is deposited. , may be divided into multiple pieces.

106 This is a heater for heating the raw material, and this heater preheats the raw material gas to suppress the generation of polysilane, and at the same time preheats the discharge electrode 105 and removes atmospheric components, moisture, etc. adsorbed on the electrode etc. .

107 A gas supply port, which is an inlet for raw material gas, and at the same time, an inlet for substrate heating gas and vacuum container cleaning gas.

108 There is a slit-like conductance adjustment mechanism that can generate a pressure difference between the pressure in the vacuum container 101 and the pressure in the film forming space 104, and the mechanism is such that the pressure difference can be selected as appropriate using partition plates with different opening diameters. .

109 Same as above 110 Vacuum gauge 111 Exhaust port, and the vacuum pump is not shown in this drawing.

(Note: Parts not shown in the drawings are marked with * below.) 112 This is a high frequency power source, and the output power can be selected as appropriate depending on the target film forming conditions.

113 A connecting portion, which has a hanging structure that connects gas gates and the like, and at the same time has a structure that allows gas such as gate gas to be introduced into the gas gates.

FIG. 2 is a schematic diagram of an apparatus example 2 of a functional deposited film manufacturing apparatus which is a part of the present invention, and the present invention is not limited to this apparatus example. Its feature is that it has two film-forming spaces in one vacuum container, and the vacuum degree of each film-forming space can be controlled independently. It is possible to create a concentration gradient in the control substance, valence control substance, etc.). Moreover, even in the case of depositing a film on a continuously moving flexible band-like member, the feature of the present invention is that a vine slit-like structure is used to generate a pressure difference between the inside and outside of each film-forming space. Due to the conductance adjustment mechanism, it is possible to form a film without being affected by gate gas flowing into the vacuum chamber from a gas gate, etc., so it is possible to control specific substances (band gap adjustment substances, valence electron control substances, etc.) depending on the thickness direction of the deposited film. It is possible to have a concentration gradient. A brief explanation of the drawings will be given below in order.

200 Schematic diagram of the whole 201 Vacuum vessel 202 Lamp heater for heating the substrate 203 Substrate 204 These are film forming spaces in which the introduced raw material gases can be decomposed under independent control, and the arrows in the figure indicate the flow paths of the respective raw material gases. 204', which schematically shows 205 as above, is a discharge electrode that discharges high frequency power independently, and each may be divided into a plurality of electrodes.

205' Same as above 206 A heater for heating raw material gas, which is one of the features of the present invention, heats the raw material gas in advance and suppresses the generation of polysilane, and at the same time heats the raw material gas and at the same time heats the raw material gas. It is possible to heat 205' in advance to remove atmospheric components, moisture, etc. adsorbed on the electrode.

206゛ Same as above 207 A gas supply port, which is an inlet for raw material gas, and at the same time an inlet for substrate heating gas and vacuum container cleaning gas.

207° Same as above 208 A feature of the present invention is to generate a differential pressure between the pressure in the vacuum container 201 and the pressure in the film forming space 204.
It is a slit-shaped conductance adjustment mechanism that generates a pressure difference between 4.204 degrees, and the pressure difference can be appropriately selected using partition plates with different opening diameters.

208゛ Same as above 209 Same as above 209′ Same as above 210 Vacuum gauge 210° Same as above 211 Exhaust port connected to an independent exhaust pump*.

211゛ Same as above 212 It is an independent high frequency power source, and the output power can be selected as appropriate depending on the desired film forming conditions.

212' Same as above 213 It is a connecting part, and has a structure that can be connected to a gas gate etc. and at the same time can introduce gas such as gate gas.

FIG. 3 is a schematic diagram of an apparatus example 3 for producing a functional deposited film according to the present invention, and the present invention is not particularly limited to this apparatus example.

Figure 'fJ3 shows the functional deposited film production apparatus of the present invention having a structure similar to apparatus examples 1 and 2, which are connected by gas gates in accordance with their respective purposes, and can easily produce photovoltaic devices, etc. This is an example of a device that does this.

Each part on the drawings will be explained in order below.

300 Schematic diagram of functional deposited film manufacturing apparatus (triple system) 301 Substrate 302 Advance roll for conveying the substrate 303 Take-up roll for conveying the substrate 304 N-layer film forming chamber 305 having the same structure as apparatus example 1 Apparatus example 2 and An i-layer film forming chamber 306 having a similar structure to that of apparatus example 1. An N-layer film forming chamber 307 having a similar structure to that of apparatus example 1. A gas gate 309 for connecting with the film forming material. By introducing gas into the deposition chamber, mixing of gases in the deposition chamber is prevented.

310 Same as above 311 Examples of vacuum container for fixing rolls The present invention will be explained below with reference to Examples, but the present invention is not particularly limited by these Examples.

Example 1 The following amorphous silicon film was formed using the functional deposited film manufacturing apparatus shown in FIG.

First, the substrate 103 was sufficiently degreased and washed, and the material of the substrate was stainless steel 5US430BA, and its dimensions were 120 mm in width, 150 mm in length, and 0.25 mm in thickness. After setting this in the device, vacuum container 10
1 and the film forming space 104 are reduced in pressure with a rotary pump* connected to an exhaust port 111, and further evacuated to about 10-'' Torr with a mechanical booster pump*.

Thereafter, while maintaining the substrate surface temperature at 280"C, the source gas heating heater 106 was maintained at 250"C, and a turbo pump* (TMP-150 manufactured by Shimadzu Corporation) was used to pump 2x 1O
Create a vacuum of -5 Torr or less. Note that the conductance adjustment partition plate 108 and the conductance adjustment partition plate 1 are prepared in advance.
The opening ratio of 09 is adjusted to 1:16, and the volume ratio of the film forming space 104 and the vacuum vessel 101 is adjusted to 3:100.
I have incorporated it so that it becomes Vacuum degree is 2X 1O-5
When the temperature drops below Torr, the gas supply port 107 cylinder*
50 sccm of H2 gas was introduced through a 7 flow controller*, and the vacuum gauge 110 was evacuated for 2 hours using a turbo molecular pump while adjusting with a butterfly valve* so that the pressure was 0.3 Torr. After that, silane gas 5il14. 15 seconds each of hydrogen gas ■2
.

150 sec is introduced through the mass flow controller*, and the rotational speed of the mechanical booster pump* is adjusted so that the vacuum gauge 110 is 1.2 Torr. From the high frequency power source 112 after introducing the raw material gas for 1 hour] 3
, 56 MH7,, effective power 15W in film forming space 1
04, and a film was formed for 1 hour. After the substrate was cooled, the substrate was taken out and the thickness of the produced film was measured in the width direction and length direction, and the difference depending on the direction was within 3%.

The measurement was performed using Alpha Step 100 manufactured by Tokyo Electron Ltd. The average deposition rate was 0 people/S. The measurement was carried out using Alpha Step 100 manufactured by Tokyo Electron Ltd. in the same manner as in Section 1.

Cut out a part of the substrate on which the deposited film has been formed and perform SIMS
Quantitative analysis of impurities in the thickness direction of the deposited film was carried out using a micrometer (1 m5-3 f manufactured by GAMECA). The results were 1/10th as compared to the results of the comparative example described later,
Regarding nitrogen and carbon, it was one fifth, and it was remarkable that the apparatus of the present invention was superior in this aspect as well.

Comparative Example In Example 1, the conductance adjustment partition plate 109 that had been adjusted in advance was fully opened, the conductance adjustment partition plate 109 was fully closed, and the vacuum chamber 101 was exhausted from the film forming space 1.
Exhausted through 04. The other methods were the same as in Example 1, and quantitative analysis of impurities in the thickness direction of the deposited film was performed. The comparison results are as described above.From the results of 1-1-1, it is possible to produce a high-quality deposited film with a reduced concentration of impurities mixed into the deposited film using the functional deposited film manufacturing apparatus of the present invention. Ta.

Example 2 Using the functional deposited film manufacturing apparatus of the present invention shown in FIG.
An amorphous silicon film was formed on a continuously moving strip member under the following conditions. First, a feed roll 214 on which a thoroughly degreased and cleaned S[JS430BA strip-shaped substrate (width 12 cm, length 50 m, thickness 0.25 mm) was wound as the substrate 203 was set in a vacuum container* having a substrate feeding mechanism. , the substrate 203 is rolled into the functional deposited film manufacturing apparatus 20 while adjusting the tension to the extent that it does not sag up to the winding roll 215 located in the vacuum container water having a substrate winding mechanism.
Passed 0. Next, the vacuum container 201, the vacuum container* to which the feed roll 214 is fixed, the vacuum container* to which the take-up roll 215 is fixed, and the film forming spaces 204 and 204' are connected to the exhaust ports 211 and 211', respectively. After creating a pre-vacuum using a rotary pump*, and then creating a vacuum of approximately 1O-3 Torr using a mechanical booster pump, the temperature of the surface of the strip member is maintained at 290°C, and the material gas heating heater is also heated at 206.206°. While maintaining the temperature at 250°C, a turbo molecular pump* (Shimadzu TMP-15
0) to create a vacuum of 2×10” Torr or less. Note that the aperture ratio of the conductance adjustment partition plate 208.208° and the conductance adjustment partition plate 209.209° was adjusted in advance to be 1:16. Also, in advance, the film forming space 2
The volume of 04.204' was set to be 5% of the volume of the vacuum container 201. When the vacuum gauge at 210.210' indicates 2X 1O-5 Torr or less, the vacuum container fixing the gas supply port 207.207° and the feed roll 214 * and the vacuum container fixing the take-up roll 215 * H2 gas was introduced from the cylinder as a purge gas through the on-site 300sec mass flow controller, and the vacuum gauge 210.210' was 0.4 Torr.
The mixture was evacuated for 2 hours using a turbo molecular pump while adjusting the butterfly valve* as shown. After that, S from the cylinder
Gas supply ports 207 for i2H6 gas and ■2 gas respectively.
．． 207' through the mass flow controller* under the conditions shown in Table 1, and the vacuum gauges 210 and 210'].
After flowing the raw material gas for 1 hour while adjusting the rotation speed of the mechanical booster pump so that the rotation speed of the mechanical booster pump becomes A film was formed by discharging in the spaces 204 and 204'.The transport speed of the substrate 203 was 10
cm/min. After cooling, the substrate was taken out, and the thickness distribution of the deposited film on the substrate manufactured in this example was measured in the width direction and length direction of the substrate. As a result, the difference between the two was within 4%, and the average deposition rate was 12 persons/S.

A portion of the manufactured substrate was cut out and quantitative analysis of impurities in the thickness direction of the deposited film was performed using SJMS (described above). Comparing the results with the results of the comparative example described later,
The concentration of impurities in the deposited film is about 1/10th of that of oxygen.
, nitrogen, and carbon were found to have decreased by about one-third.

It has also become clear that the variation in the thickness of the deposited film has been reduced by about one-third.

Comparative Example 2 The conductance adjustment partition plates 208 and 208', which had been adjusted in advance in Example 2, were fully opened, the conductance adjustment partition plates 209 and 209' were fully closed, and the vacuum container 201 and feed roll 214 were fixed. The vacuum container* that holds the take-up roll 215, and the vacuum container* that fixes the take-up roll 215
The exhaust gas was exhausted through the film forming spaces 204 and 204'.

The thickness distribution of the deposited film and the quantitative analysis of impurities in the thickness direction of the deposited film were otherwise conducted in the same manner as in Example 2. Almost the same values as Comparative Example 1 were shown for oxygen, nitrogen, and carbon. Based on the results in h-h above, by using the apparatus for producing a functional deposited film of the present invention, the concentration of impurities mixed into the deposited film can be reduced even when the deposited film is manufactured on a continuously movable strip member. It was possible to suppress variations in the thickness of the deposited film without being affected by purge gas or the like from sources other than the raw material gas supply port.

Example 3 In Example 1, the volume of the film forming space 104 was changed to the vacuum vessel 10.
The preferable volume ratio was examined by sequentially changing the volume compared to the volume of 1. The deposition conditions were adjusted based on the deposition conditions of Example 2 by changing the gas flow rate and input power in accordance with the volume ratio so that the deposition rate was about 10λ/S on average. The obtained deposited film was evaluated and measured in the same manner as in Example 1, and the oxygen concentration in the deposited film was compared with that of Comparative Example 1. The results are shown in FIG.

From the above results, in the deposition apparatus of the present invention, the volume ratio of the film forming space that can decompose the source gas to the vacuum container is 10%.
It has become clear that the following is more desirable and improved.

Example 4 A deposited film was formed in the same manner as in Example 1 without operating the source gas heater 106.

The obtained deposited film was measured and evaluated in the same manner as in Example 1, and the oxygen concentration in the deposited film was compared with Comparative Example 1. As a result, it became clear that it was one-third of that of Comparative Example 1. Examining Example 1 from the above results, it can be seen that in the deposited film apparatus of the present invention, a heating means is disposed upstream of the film forming space in order to heat the source gas before introducing it into the film forming space. It turned out to be favorable.

Example 5 In Example 2, GeH2 was further added to the raw material gas, and Table 2
A film was formed under the film forming conditions shown in , and measured in the same manner as in Example 2.
We conducted an evaluation. As a result, the variation in the thickness direction of the deposited film is 5
%, and the average deposition rate was 18 persons/S.

A portion of the substrate on which the deposited film was manufactured was cut out at six arbitrary locations, and the composition of the deposited film in the thickness direction was analyzed using SIMS (described above). As a result, the depth profile shown in FIG. 5 was obtained, and it became clear that the band gap profile shown in FIG. 6 was formed.

Judging from the above ten results, by using the apparatus for manufacturing a functional deposited film of the present invention, it is possible to form a deposited film on a continuously moving strip-like member by supplying raw material gas [purge gas from sources other than 1]. It has become possible to distribute the bandgap adjusting substance as desired in the thickness direction of the deposited film without being affected by such factors.

Example 6 A single solar cell having a tilted bandgap profile was produced using the functional deposited film manufacturing apparatus of the present invention shown in FIG. The n-layer and the second layer were formed under the conditions shown in Table 3, and the i-layer was formed under the same conditions as in Example 5. Note that the conveyance speed of the base 301 is 30 cm/min,
Gate gas: Herr gas, H2 gas each 250
sccm, 300 sccm to the gate gas introduction pipe 308.
310, and all other operations were the same as in Example 2.

The amorphous silicon germanium solar cell produced in this way was exposed to AML, 5 (100 mW/cm2
) and measured the photoelectric conversion efficiency. the result]
A value of 10.4% was obtained with a cell size of 0 cm square.

Voc (open circuit voltage) was 0.70V, and F, F, (fill factor) was 0.71.

As a result of the above, by using the apparatus for manufacturing a functional deposited film of the present invention, even when manufacturing a deposited film on a continuously moving strip member, the deposition film can be deposited without being affected by gate gas etc. from sources other than the raw material gas supply port. It has become possible to distribute the bandgap adjusting substance as desired in the film thickness direction of the film, making it possible to produce a good solar cell.

Summary of Effects of the Invention According to the above-described apparatus for producing a functional deposited film of the present invention,
It is possible to reduce the concentration of impurities mixed into the deposited film without increasing the size of the equipment, making it possible to easily mass-produce high-quality deposited films, resulting in stable product production and cost reduction. This has made it possible to supply high-performance photovoltaic elements to the market at low cost.

[Brief explanation of the drawing]

FIGS. 1, 2, and 3 are schematic diagrams of an apparatus for producing a functional deposited film suitable for explaining the present invention. FIG. 4 is a graph showing the relationship between the volume ratio of the film forming space and the vacuum container and mixed oxygen. FIG. 5 is a diagram showing the depth profile of component elements of the deposited film formed in Example 5 of the present invention. FIG. 6 is a schematic diagram of the bandgap profile of the deposited film manufactured in Example 5 of the present invention. 100 Schematic diagram of the whole 101 Vacuum vessel 102 Lamp heater for heating the substrate 103 Substrate 104 Film forming space in which the raw material gas is formed into a film, the arrow in the figure indicates the flow path 105 for the raw material gas Discharge electrode 106 Heater for heating the raw material 107 Gas supply port 108 A slit-like conductance adjustment mechanism capable of generating a pressure difference between the pressure in the vacuum container 101 and the pressure in the film forming space 104, and a mechanism in which the pressure difference can be appropriately selected using partition plates with different opening diameters 109 Same as above 110 Vacuum Total 111 Exhaust port 112 High frequency power source 113 Connecting part 200 Overall schematic diagram 201 Vacuum container 202 Lamp heater for heating the substrate 203 Substrate 204 Film forming space where the introduced raw material gas can be decomposed under independent control, arrows in the figure 206 are the heaters for heating the raw material gas, which is one of the features of the present invention; 206 are the same as above; 207 are the gas supply ports 207; 208 are the vacuum vessels 201; Internal pressure and film forming space 04.2
Slit-shaped conductance adjustment mechanism 208' that generates a differential pressure between the pressure within the film forming spaces 204 and 204' 209 209'209' 210 Vacuum gauge 210 ° Same - L 211 Exhaust port 211 ° Same 212 Independent high frequency power supply 212' Same 213 Connecting section 300 Schematic diagram of functional deposited film manufacturing apparatus (triple type) 301 Substrate 302 Advance roll for substrate conveyance 303 Substrate conveyance Take-up roll 304 N-layer film forming chamber 305 having the same structure as apparatus example 1 I-layer film forming chamber 306 having the same structure as apparatus example 2 N-layer film forming chamber 307 having the same structure as apparatus example 1 Gas gate 309 for connecting with film formation quality
Same as above 308 Gas gate introduction pipe 310 Same as above

Claims (4)

[Claims] (1) A functional deposited film having at least one vacuum container, a film forming space within the vacuum container that can decompose the source gas, and an exhaust system for simultaneously exhausting the vacuum container and the film forming space. 1. A functional deposited film manufacturing apparatus, characterized in that the manufacturing apparatus has an exhaust speed adjustment mechanism for independently controlling the exhaust speed of a vacuum container and the exhaust speed of a film forming space. (2) The functional deposited film manufacturing apparatus according to claim 1, wherein the film forming space is for forming a film on a substrate that moves continuously in the length direction. (3) The functional deposited film manufacturing apparatus according to claim 1, wherein a volume ratio of the film forming space capable of decomposing the source gas to the vacuum container is 10% or less. (4) Claim 1 characterized in that a heating means is arranged in a flow path for supplying source gas to the film forming space.
The functional deposited film manufacturing apparatus described above.