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JPH04184947A - Wire-bonding device - Google Patents

Wire-bonding device

Info

Publication number
JPH04184947A
JPH04184947A JP2314619A JP31461990A JPH04184947A JP H04184947 A JPH04184947 A JP H04184947A JP 2314619 A JP2314619 A JP 2314619A JP 31461990 A JP31461990 A JP 31461990A JP H04184947 A JPH04184947 A JP H04184947A
Authority
JP
Japan
Prior art keywords
wire
tension
clamper
capillary
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2314619A
Other languages
Japanese (ja)
Inventor
Osamu Kudo
工藤 治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Miyagi Electronics Ltd
Original Assignee
Fujitsu Miyagi Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Miyagi Electronics Ltd filed Critical Fujitsu Miyagi Electronics Ltd
Priority to JP2314619A priority Critical patent/JPH04184947A/en
Publication of JPH04184947A publication Critical patent/JPH04184947A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To avoid the excessive wire feeding by inertia even in the rapid wire- bonding operation by a method wherein an impressing means of supplementary tension is provided between a clamper and an air tension mechanism. CONSTITUTION:A taper through hole 4 in opening diameters of about 0.3mm and 0.1mm respectively on a clamper 3 side and an air tension mechanism 5 side is made in a member 41 about 15mm long and then a wire 7 in diameter of 20-40mum is inserted into the through hole 42. Next, a duct 43 reaching the through hole 42 is provided close to the end on the mechanism 5 side of the member 41. In such a constitution, an air flow from the end of the clamper 3 side to the mechanism 5 side is excited in the through hole 42 so that the supplementary tension impressed by a tension impressing means 4 may be adjusted to the specified value by controlling the air flow rate.

Description

【発明の詳細な説明】 〔概 要〕 半導体集積回路チップにワイヤを接合するための装置に
関し。
[Detailed Description of the Invention] [Summary] This invention relates to an apparatus for bonding wires to a semiconductor integrated circuit chip.

該チップとリードフレームのリード部との間に所望の形
状のワイヤを再現性よく架設可能とすることを目的とし
The object of the present invention is to enable a wire of a desired shape to be installed between the chip and the lead portion of a lead frame with good reproducibility.

半導体集積回路チップにワイヤを押圧して接合するキャ
ピラリと該キャピラリに供給される前記ワイヤを所定の
タイミングで把持するクランパと該クランパに供給され
る該ワイヤに張力を印加する張力印加手段とを有し、該
張力印加手段は、該ワイヤが嵌挿される該クランパ側か
ら逆方向に向けて縮小するテーパー状の貫通穴が設けら
れた部材と、該貫通穴内に該クランパーから逆方向に向
かう気流を生じさせる手段とを備えることにより構成さ
れる。
A capillary that presses and joins a wire to a semiconductor integrated circuit chip, a clamper that grips the wire supplied to the capillary at a predetermined timing, and a tension applying means that applies tension to the wire supplied to the clamper. The tension applying means includes a member provided with a tapered through hole that contracts in the opposite direction from the clamper side into which the wire is inserted, and an airflow flowing in the opposite direction from the clamper into the through hole. and a means for causing the phenomenon to occur.

〔産業上の利用分野〕[Industrial application field]

本発明は、半導体集積回路チップにワイヤを接合するた
めの装置に関する。
The present invention relates to an apparatus for bonding wires to semiconductor integrated circuit chips.

ワイヤボンディング装置は、リードフレームに接着され
た半導体集積回路チップ(以下チップと略記する)とリ
ードフレームのリード部との間に。
A wire bonding device connects a semiconductor integrated circuit chip (hereinafter abbreviated as a chip) bonded to a lead frame and a lead portion of the lead frame.

金あるいは銅等から成る直径30μ−程度のワイヤを架
設するための装置であって、第6図(a)および(ロ)
に示すように、キャピラリlの内部を通して供給される
ワイヤ7を、チップ8の周辺に設けられているポンディ
ングパッド8.に接合したのち、ワイヤ7の供給を続け
ながらキャピラリ1をリードフレームのリード部9に移
動させ、ワイヤ7をリード部9に接合する。一対のポン
ディングパッド8Iとリード部9との間にワイヤ7が架
設されると。
This is a device for constructing a wire made of gold or copper, etc., with a diameter of about 30μ, and is shown in Figs. 6(a) and (b).
As shown in FIG. 3, a wire 7 fed through the inside of the capillary l is connected to a bonding pad 8. which is provided around the chip 8. After bonding, the capillary 1 is moved to the lead portion 9 of the lead frame while continuing to supply the wire 7, and the wire 7 is bonded to the lead portion 9. When the wire 7 is installed between the pair of bonding pads 8I and the lead portion 9.

キャピラリl先端でワイヤ7を切断し、別のポンディン
グパッド8I−リード部9間に同様にしてワイヤ7を架
設する。
The wire 7 is cut at the tip of the capillary l, and the wire 7 is similarly installed between another bonding pad 8I and the lead portion 9.

上記のようにして架設されたワイヤ7には、同図(ハ)
の断面図に示すように、上方への湾曲が与えられている
。これは、熱膨張等によりポンディングパッド8I−リ
ード部9間の距離が変化したときの張力によって、ワイ
ヤ7が切断したり、あるいは、ポンディングパッド8I
やリード部9から剥離したりすることを防止するため、
および、チップ8のエツジとワイヤ7とが接触してしま
うことを防止するためである。
The wire 7 installed as described above is shown in FIG.
As shown in the cross-sectional view, an upward curvature is provided. This is because the wire 7 may be cut due to tension when the distance between the bonding pad 8I and the lead portion 9 changes due to thermal expansion, or the bonding pad 8I may
In order to prevent it from peeling off from the lead part 9,
This is also to prevent the edge of the chip 8 and the wire 7 from coming into contact with each other.

〔従来の技術〕[Conventional technology]

上記のような湾曲形状は、ワイヤ7の架設工程の間に、
キャピラリ1を上下1前後、左右の3次元方向に変位さ
せることにより形成される。これを第4図を参照してや
や詳細に説明する。
The above-mentioned curved shape is created during the construction process of the wire 7.
It is formed by displacing the capillary 1 in three-dimensional directions: up and down, back and forth, and right and left. This will be explained in more detail with reference to FIG.

リール6に巻かれたワイヤ7は第1のクランパ2および
第2のクランパ3を通じてキャピラリ1に供給される。
The wire 7 wound on the reel 6 is supplied to the capillary 1 through the first clamper 2 and the second clamper 3.

ワイヤ7は、リール6とクランパ3との間に設けられた
エアーテンション機構5により、常時、所定の張力が付
与されている。第4図において符号lOは、キャピラリ
1を保持および移動するための支持アームであって、キ
ャピラリ1の先端のワイヤ7をチップ8およびリードフ
レームのリード部9に超音波により接合する場合には、
超音波エネルギーを伝達するためのホーンを兼ねている
A predetermined tension is always applied to the wire 7 by an air tension mechanism 5 provided between the reel 6 and the clamper 3. In FIG. 4, reference numeral 10 denotes a support arm for holding and moving the capillary 1, and when the wire 7 at the tip of the capillary 1 is joined to the chip 8 and the lead part 9 of the lead frame by ultrasonic waves,
It also serves as a horn for transmitting ultrasonic energy.

キャピラリl、クランパ2および3.エアーテンション
機構5ならびに支持アームlOは、ワイヤ7とチップ8
およびリード部9との接合にともなうボンディングヘッ
ドの動作において、一体となって移動する。クランパ2
および3は、キャビラ+71が上方、すなわち、チップ
8またはリード部9から遠ざかる動作においてワイヤ7
を把持し。
capillary l, clampers 2 and 3. The air tension mechanism 5 and the support arm lO are connected to the wire 7 and the tip 8.
In the movement of the bonding head accompanying the bonding with the lead portion 9, the bonding head moves as one. Clamper 2
and 3 indicate the wire 7 in the movement of the cabilla +71 upwards, that is, away from the chip 8 or the lead part 9.
grasp it.

キャピラリlが下方、すなわち、チップ8またはリード
部9に接近する工程においてはワイヤ7の把持を開放す
るように動作する。キャピラリ1の移動とクランパ2お
よび3ならびにエアーテンション機構5の動作の関係を
、第5図のタイミング説明図に示す、ただし、キャピラ
リ1の移動は。
In the process in which the capillary l moves downward, that is, approaches the chip 8 or the lead portion 9, it operates to release its grip on the wire 7. The relationship between the movement of the capillary 1 and the operations of the clampers 2 and 3 and the air tension mechanism 5 is shown in the timing diagram of FIG. 5, except for the movement of the capillary 1.

上下方向の成分で代表させである。It is represented by the components in the vertical direction.

一般に、チップ8に対してワイヤ7を接合したのち、キ
ャピラリ1は、チップ8とリード部9との間を、上方に
凸な弧を描くように運動しながらリード部9に接近し、
ワイヤ7をリード部9に接合する。そして9図示しない
切断機構によりキャピラリ1先端でワイヤ7が切断され
ると、キャピラリ1は、再び上方に移動しながら、チッ
プ8上の次のポンディングパッド8.に接近する。第5
図に示されるように、ワイヤ7は、キャピラリlの下方
への運動においては、その前半の期間においてのみクラ
ンパ3によって把持され、その後半の期間は、クランパ
2および3による把持から開放される。一方、キャピラ
リ1の上方への運動においてクランパ2および3により
把持される。これは、キャピラリ1が上方へ移動すると
きに、キャピラリ1先端からワイヤ7が僅かに突出する
状態を保持するためである。
Generally, after the wire 7 is bonded to the chip 8, the capillary 1 approaches the lead part 9 while moving upward in a convex arc between the chip 8 and the lead part 9.
Wire 7 is joined to lead portion 9. Then, when the wire 7 is cut at the tip of the capillary 1 by a cutting mechanism (not shown), the capillary 1 moves upward again and moves to the next bonding pad 8.9 on the chip 8. approach. Fifth
As shown in the figure, the wire 7 is gripped by the clamper 3 only during the first half of the downward movement of the capillary l, and is released from gripping by the clampers 2 and 3 during the latter half. On the other hand, as the capillary 1 moves upward, it is gripped by clampers 2 and 3. This is to keep the wire 7 slightly protruding from the tip of the capillary 1 when the capillary 1 moves upward.

(発明が解決しようとする課題) 上記のようにしてチップ8−リード部9間に架設される
ワイヤ7の弧の形状は、キャピラリ1の運動径路と移動
速度、ワイヤ7の弾性力、エアーテンション機構5によ
る張力、クランパ2および3による摩擦力等によって微
妙に変化する。また。
(Problem to be Solved by the Invention) The shape of the arc of the wire 7 installed between the chip 8 and the lead part 9 as described above is determined by the motion path and moving speed of the capillary 1, the elastic force of the wire 7, and the air tension. It changes slightly depending on the tension caused by the mechanism 5, the frictional force caused by the clampers 2 and 3, etc. Also.

同−のチップにおいても、ポンディングパッドと対応す
るリード部との距離が一定でなく、この距離による形状
の変化も大きい。
Even in the same chip, the distance between the bonding pad and the corresponding lead portion is not constant, and the shape changes greatly depending on this distance.

ところで、半導体集積回路が高密度化し、外部との接続
端子数が増加するのにともなって、隣接するポンディン
グパッド間および隣接するリード部間の距離が小さくな
る。その結果、上記のようにして架設されたワイヤに僅
かな変形生じた場合。
Incidentally, as semiconductor integrated circuits become denser and the number of external connection terminals increases, the distances between adjacent bonding pads and between adjacent lead portions become smaller. As a result, the wire installed as described above may be slightly deformed.

隣接するワイヤどうしが接触しやすくなる。このような
変形は、チップを樹脂中に埋め込むモールド工程におけ
る樹脂の流動によっても増大する。
Adjacent wires come into contact with each other more easily. Such deformation is also increased by the flow of the resin during the molding process in which the chip is embedded in the resin.

したがって、所定の形状を有するようにワイヤを架設す
ることが基本的に要求される。
Therefore, it is basically required to construct the wire so that it has a predetermined shape.

しかしながら、上記のように高密度化する半導体装置チ
ップに多数のワイヤを高速でボンディングしようとする
と、架設され起ワイヤの形状のバラツキや変形が大きく
、前記のようなワイヤどうしの接触による不良が生じや
すくなる問題があった。とくに、金線のような比較的軟
ら力中ワイヤの場合には、形状のバラツキが大きく、ボ
ンディング速度を低くしなければならない問題があった
However, when attempting to bond a large number of wires at high speed to semiconductor device chips that are becoming more densely packed as described above, the shapes of the raised wires greatly vary and deform, resulting in defects due to contact between the wires as described above. There was a problem that got easier. Particularly, in the case of a relatively soft wire such as a gold wire, there is a problem in that the shape varies greatly and the bonding speed must be lowered.

さらに、近年、半導体集積回路パッケージを薄く(高さ
を低く)する傾向にあり、その結果、チップ−リード部
間に架設されるワイヤの湾曲形状の高さを低減する必要
が生じている。このために。
Furthermore, in recent years, there has been a trend to make semiconductor integrated circuit packages thinner (lower in height), and as a result, it has become necessary to reduce the height of the curved shape of the wire installed between the chip and the lead portion. For this.

架設ワイヤの弧の多様な形状に対応できる能力が要求さ
れるようになっているのであるが、従来のワイヤボンデ
ィング装置では対応が困難であった。
There is an increasing demand for the ability to handle various shapes of the arcs of the construction wire, but it has been difficult for conventional wire bonding equipment to handle this.

本発明は、上記のような問題点の解決ならびに新たな要
求に対応可能なワイヤボンディング装置を提供すること
を目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to provide a wire bonding device that can solve the above-mentioned problems and meet new demands.

〔課題を解決するための手段〕[Means to solve the problem]

上記目的は、半導体集積回路チップにワイヤを押圧して
接合するキャピラリと該キャピラリに供給される前記ワ
イヤを所定のタイミングで把持するクランパと該クラン
パに供給される該ワイヤに張力を印加する張力印加手段
とを有し、該張力印加手段は、該ワイヤが嵌挿される該
クランパ側から逆方向に向けて縮小するテーパー状の貫
通穴が設けられた部材と、該貫通穴内に該クランパ側か
ら逆方向に向かう気流を生じさせる手段とを備えたこと
を特徴とする本発明に係るワイヤボンディング装置によ
って達成される。
The above objects include a capillary that presses and joins a wire to a semiconductor integrated circuit chip, a clamper that grips the wire supplied to the capillary at a predetermined timing, and a tension application that applies tension to the wire that is supplied to the clamper. The tension applying means includes a member provided with a tapered through hole that contracts in the opposite direction from the clamper side into which the wire is inserted, and a member provided with a tapered through hole that contracts in the opposite direction from the clamper side into the through hole. This is achieved by the wire bonding apparatus according to the present invention, which is characterized in that it is equipped with means for generating a directional airflow.

〔作 用〕[For production]

従来のワイヤボンディング装置においては、キャピラリ
1が下降する期間にワイヤ7に対して印加される張力は
、主としてエアーテンション機構5によって与えられて
いた。しかし、エアーテンション機構5は、ノズルから
噴出した空気を、直径30μ鋤程度のワイヤ7に対して
側方から吹き付けるものであって4.充分な張力が印加
されなかった。このため、クランパ2および3による把
持から開放された状態のワイヤ7が、キャピラリlによ
り高速で下方に引っ張られたとき、自身の慣性により、
余分な長さのワイヤ7がキャピラリ1から供給されてし
まうために、架設ワイヤの形状にバラツキが生じ、また
、変形が生じやすくなる。
In the conventional wire bonding apparatus, the tension applied to the wire 7 while the capillary 1 is descending is mainly applied by the air tension mechanism 5. However, the air tension mechanism 5 blows air ejected from a nozzle from the side onto the wire 7, which has a diameter of about 30 μm. Not enough tension was applied. Therefore, when the wire 7 released from the grips of the clampers 2 and 3 is pulled downward at high speed by the capillary l, due to its own inertia,
Since an extra length of wire 7 is supplied from the capillary 1, the shape of the construction wire varies and deformation is likely to occur.

ボンディング速度を低速にすれば、こ、の問題を軽減で
きるが、ボンディング能率の低下が避けられない。
Although this problem can be alleviated by reducing the bonding speed, a decrease in bonding efficiency is unavoidable.

本発明においては、第1図(a)および(ロ)に示すよ
うに、付加的な張力を印加するための第2の張力印加手
段4をクランパ3とエアーテンション機構5間に付加す
ることにより、高速ボンディング動作においても、慣性
により余分なワイヤ7が供給されないようにする。この
ような第2の張力印加手段4を、同図(ロ)に示すよう
に、ワイヤ7が貫通する貫通穴43が設けられた部材4
1と1貫通穴4.内におけるワイヤ7と部材4.との間
隙に、クランパ3側の端部からエアーテンシぢン機構5
例の端部社内かう気流を発生させる手段とから構成する
In the present invention, as shown in FIGS. 1(a) and (b), a second tension applying means 4 for applying additional tension is added between the clamper 3 and the air tension mechanism 5. Even in high-speed bonding operations, extra wire 7 is prevented from being supplied due to inertia. The second tension applying means 4 is a member 4 provided with a through hole 43 through which the wire 7 passes, as shown in FIG.
1 and 1 through hole 4. Wire 7 and member 4 within. The air tension mechanism 5 is inserted from the end on the clamper 3 side into the gap between the
The end of the example comprises a means for generating such an airflow within the interior.

このような第2の張力印加手段4を、エアーテンション
機構5とともにボンディングヘッドに固定する。
Such second tension applying means 4 is fixed to the bonding head together with the air tension mechanism 5.

これにより、エアーテンション機構5に比べて充分に大
きな張力をワイヤ7に印加し、しかも。
As a result, a tension that is sufficiently larger than that of the air tension mechanism 5 can be applied to the wire 7.

気流の流速を制御することによって張力を変化可能であ
るため、チップ8−リード部9間に所望の湾曲形状を有
するワイヤ7を架設することができる。
Since the tension can be changed by controlling the flow rate of the airflow, the wire 7 having a desired curved shape can be installed between the chip 8 and the lead portion 9.

〔実施例〕〔Example〕

以下本発明の実施例を図面を参照して説明する。 Embodiments of the present invention will be described below with reference to the drawings.

以下の図面において、既掲の図面におけるのと同じ部分
には同一符号を付しである。
In the following drawings, the same parts as in the previously shown drawings are designated by the same reference numerals.

第2図は上記第2の張力印加手段4の構造の一実施例を
説明するための模式的断面図であって。
FIG. 2 is a schematic cross-sectional view for explaining one embodiment of the structure of the second tension applying means 4. As shown in FIG.

例えば金属あるいは非金属から成る長さ(L)が約15
+++mの部材4Iには、クランパ3側の端部およびエ
アーテン93フ機構5例の端部のそれぞれにおける開口
径が0.3mmおよび0.1m+n程度であるテーパ状
の貫通穴48が設けられており、この内部に直径20〜
40a−のワイヤ7が嵌挿される。
For example, the length (L) made of metal or non-metal is about 15
+++m member 4I is provided with a tapered through hole 48 having opening diameters of approximately 0.3 mm and 0.1 m+n at the end on the clamper 3 side and the end of the five air tension mechanisms 93, respectively. , inside this diameter 20~
The wire 7 of 40a- is inserted.

部材4.のエアーテンション機構5側の端部近傍には9
例えば部材41の側面に垂直で、かつ1貫通穴4.に達
する導管4.が1〜複数ケ設けられており。
Member 4. 9 near the end of the air tension mechanism 5 side.
For example, perpendicular to the side surface of the member 41, and one through hole 4. Conduit reaching 4. One or more are provided.

さらに、導管4sを外部の真空排気管4hに導く溝4゜
が設けられている0部材4.は、クランパ2および3等
とともにボンディングヘッドに固定され、真空排気管4
hが2図示しない可撓性の管によって真空排気装置(図
示省略)に接続される。真空排気管4.を真空排気する
と、クランパ3例の端部から貫通穴4冨に空気が流入し
てエアーテンション機構5側に向かう気流が発生し、こ
れによりワイヤ7に対して、エアーテンション機構5側
に向かう張力が印加される。
Further, a member 4.0 is provided with a groove 4° for guiding the conduit 4s to an external vacuum exhaust pipe 4h. is fixed to the bonding head together with clampers 2 and 3, etc., and is connected to the vacuum exhaust pipe 4.
h is connected to a vacuum evacuation device (not shown) through two flexible tubes (not shown). Vacuum exhaust pipe 4. When the wire 7 is evacuated, air flows into the through hole 4 from the end of the clamper 3, creating an airflow toward the air tension mechanism 5, which causes tension to be applied to the wire 7 toward the air tension mechanism 5. is applied.

上記本発明の構成におけるキャピラリlの移動とクラン
パ2および3ならびにエアーテンション機構5と第2の
張力印加手段4の動作の関係を。
The relationship between the movement of the capillary l and the operations of the clampers 2 and 3, the air tension mechanism 5, and the second tension applying means 4 in the configuration of the present invention is shown below.

第3図のタイミング説明図に示す。ただし、キャピラリ
1の移動は、上下方向の成分で代表させである。図示の
ように、第2の張力印加手段4による張力は、はぼクラ
ンパ3によるワイヤ7の把持が開放されるタイミングと
同期して印加する。そして、真空排気管46を通じての
排気速度を制御することによって、第2の張力印加手段
4によって付加される張力の大きさを所望の値に調節す
ることができる。なお、第2の張力印加手段4の作動タ
イミングと張力の最適設定は、キャピラリlの移動速度
、チップ8−リード部9間距離、ワイヤ7の硬さおよび
チップ8−リード部9間に架設されるワイヤ7の湾曲形
状に応じて実験的に決定する。
This is shown in the timing explanatory diagram of FIG. However, the movement of the capillary 1 is represented by the vertical component. As shown in the figure, the tension by the second tension applying means 4 is applied in synchronization with the timing at which the wire 7 is released from the clamper 3. By controlling the exhaust speed through the vacuum exhaust pipe 46, the magnitude of the tension applied by the second tension applying means 4 can be adjusted to a desired value. The optimum setting of the operation timing and tension of the second tension applying means 4 depends on the moving speed of the capillary l, the distance between the tip 8 and the lead part 9, the hardness of the wire 7, and the length of the bridge between the tip 8 and the lead part 9. It is determined experimentally depending on the curved shape of the wire 7.

(発明の効果〕 本発明によれば、チップ−リード部間にワイヤを高速で
架設する際に、それ自身の慣性によって余分なワイヤが
供給されることが防止される。したがって、キャピラリ
の移動速度やワイヤの材質に起因する制約が緩和され、
架設ワイヤの湾曲形状の設計の自由度が拡大され、薄型
のパッケージを必要とする半導体装置や高密度半導体集
積回路に要求されるより複雑な湾曲形状のワイヤを架設
できる。その結果、架設ワイヤ間の接触を低減し。
(Effects of the Invention) According to the present invention, when the wire is installed between the chip and the lead portion at high speed, excess wire is prevented from being supplied due to its own inertia. Therefore, the moving speed of the capillary Restrictions caused by wire materials and wire materials are relaxed.
The degree of freedom in designing the curved shape of the installation wire is expanded, and wires with more complicated curved shapes required for semiconductor devices and high-density semiconductor integrated circuits that require thin packages can be installed. As a result, contact between the erection wires is reduced.

これら半導体装置の製造歩留りおよび信鯨性を向上可能
とする効果がある。
This has the effect of improving the manufacturing yield and reliability of these semiconductor devices.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の原理説明図。 第2図は本発明における第2の張力印加手段4の構造の
実施例説明図。 第3図は本発明における第2の張力印加手段4の動作タ
イミング説明図。 第4図は従来のワイヤボンディング装置の概要構成図。 第5図は従来のボンディングヘッド各部の動作タイミン
グ説明図。 第6図はワイヤボンディング方法の概要説明図である。 図において。 ■はキャピラリ、  2と3はクランパ。 4は第2の張力印加手段。 5はエアーテンション機構。 6はリール、  7はワイヤ、  8はチップ。 9はリード部、   10は支持アーム。 4、は部材、4.は貫通穴。 4、は気流発生手段、44は溝。 4、は導管+  4hは真空排気管。 8Iはポンディングパッド である。 ′11 団 d孟 躾来のワイヤボッデイン7°襞置の、f既雰講或口% 
 4  図 ワイヤボソテーングカj乏のポ見1!栃も朗m第  6
  図
FIG. 1 is a diagram explaining the principle of the present invention. FIG. 2 is an explanatory diagram of an embodiment of the structure of the second tension applying means 4 in the present invention. FIG. 3 is an explanatory diagram of the operation timing of the second tension applying means 4 in the present invention. FIG. 4 is a schematic configuration diagram of a conventional wire bonding device. FIG. 5 is an explanatory diagram of the operation timing of each part of a conventional bonding head. FIG. 6 is a schematic explanatory diagram of the wire bonding method. In fig. ■ is a capillary, 2 and 3 are clampers. 4 is a second tension applying means. 5 is an air tension mechanism. 6 is the reel, 7 is the wire, and 8 is the chip. 9 is a lead part, 10 is a support arm. 4 is a member; 4. is a through hole. 4 is an airflow generating means, and 44 is a groove. 4. is a conduit + 4h is a vacuum exhaust pipe. 8I is a bonding pad. '11 Group d Meng Qi's wire bodane 7° fold position, F existing atmosphere lecture or mouth%
4 Diagram 1: Pocket view of wire bossing capacity! Tochimo Rom No. 6
figure

Claims (1)

【特許請求の範囲】 半導体集積回路チップにワイヤを押圧して接合するキャ
ピラリと該キャピラリに供給される前記ワイヤを所定の
タイミングで把持するクランパと該クランパに供給され
る該ワイヤに張力を印加する張力印加手段とを有し、該
張力印加手段は、該ワイヤが嵌挿される該クランパ側か
ら逆方向に向けて縮小するテーパー状の貫通穴が設けら
れた部材と、 該貫通穴内に該クランパ側から逆方向に向かう気流を生
じさせる手段 とを備えたことを特徴とするワイヤボンディング装置。
[Claims] A capillary that presses and joins a wire to a semiconductor integrated circuit chip, a clamper that grips the wire supplied to the capillary at a predetermined timing, and a tension force applied to the wire supplied to the clamper. a member provided with a tapered through hole that contracts in the opposite direction from the clamper side into which the wire is inserted; A wire bonding device characterized by comprising: means for generating an airflow in the opposite direction from the opposite direction.
JP2314619A 1990-11-20 1990-11-20 Wire-bonding device Pending JPH04184947A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2314619A JPH04184947A (en) 1990-11-20 1990-11-20 Wire-bonding device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2314619A JPH04184947A (en) 1990-11-20 1990-11-20 Wire-bonding device

Publications (1)

Publication Number Publication Date
JPH04184947A true JPH04184947A (en) 1992-07-01

Family

ID=18055487

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2314619A Pending JPH04184947A (en) 1990-11-20 1990-11-20 Wire-bonding device

Country Status (1)

Country Link
JP (1) JPH04184947A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018168888A1 (en) * 2017-03-16 2018-09-20 株式会社新川 Wire bonding device, and semiconductor device manufacturing method
TWI721404B (en) * 2019-04-11 2021-03-11 日商新川股份有限公司 Wire bonding device, semiconductor device manufacturing method, and semiconductor device
CN113785386A (en) * 2019-05-27 2021-12-10 株式会社新川 Wire bonding device, method for manufacturing semiconductor device, and semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018168888A1 (en) * 2017-03-16 2018-09-20 株式会社新川 Wire bonding device, and semiconductor device manufacturing method
TWI668773B (en) * 2017-03-16 2019-08-11 日商新川股份有限公司 Manufacturing method of wire bonding device and semiconductor device
US11450640B2 (en) 2017-03-16 2022-09-20 Shinkawa Ltd. Wire bonding apparatus and manufacturing method for semiconductor apparatus
TWI721404B (en) * 2019-04-11 2021-03-11 日商新川股份有限公司 Wire bonding device, semiconductor device manufacturing method, and semiconductor device
CN113785386A (en) * 2019-05-27 2021-12-10 株式会社新川 Wire bonding device, method for manufacturing semiconductor device, and semiconductor device
CN113785386B (en) * 2019-05-27 2025-01-10 株式会社新川 Wire bonding device, method for manufacturing semiconductor device, and semiconductor device

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