JPH0412330A - Active matrix type liquid crystal display device - Google Patents
Active matrix type liquid crystal display deviceInfo
- Publication number
- JPH0412330A JPH0412330A JP2112639A JP11263990A JPH0412330A JP H0412330 A JPH0412330 A JP H0412330A JP 2112639 A JP2112639 A JP 2112639A JP 11263990 A JP11263990 A JP 11263990A JP H0412330 A JPH0412330 A JP H0412330A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- silicon nitride
- active matrix
- silicon oxynitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011159 matrix material Substances 0.000 title claims description 15
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 15
- 239000000203 mixture Substances 0.000 claims abstract description 14
- 230000001681 protective effect Effects 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 10
- 230000004888 barrier function Effects 0.000 abstract description 9
- 150000002500 ions Chemical class 0.000 abstract description 9
- 239000003513 alkali Substances 0.000 abstract description 8
- 230000004807 localization Effects 0.000 abstract description 3
- 238000011109 contamination Methods 0.000 abstract description 2
- 238000005336 cracking Methods 0.000 abstract description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- -1 5iOxN Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は、薄膜トランジスタ（ＴＰＴ）等により構成さ
れたアクティブマトリクス型液晶ディスプレイ装置（Ｌ
ＣＤ）に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Fields] The present invention relates to an active matrix liquid crystal display device (L
Regarding CD).
［従来の技術］
従来、この種のアクティブマトリクスＬＣＤは、第３図
に示すように構成されている。[Prior Art] Conventionally, this type of active matrix LCD is configured as shown in FIG.
即ち、ガラス基板１上には、ＴＦＴのゲート電極２が形
成され、更にその上を覆うように全面にゲート絶縁膜３
が形成されている。ゲート絶縁膜３のゲート電極２直上
域の上面には、ｓｉ膜４、ｎ”ｓｉ膜５及びソース・ド
レイン電極６が順次形成されている。そして、その上面
からＳｉ膜４に達する掘込部８が形成されると共に、ソ
ース・ドレイン電極に接続される絵素電極７が形成され
、さらにその上面を表面保護膜９で覆うようにしている
。これにより、ゲート電極２の配置されてぃる部分がＴ
ＦＴ部１部長０素電極７の部分が絵素部１１として使用
されるものとなっている。That is, a TFT gate electrode 2 is formed on a glass substrate 1, and a gate insulating film 3 is further formed on the entire surface so as to cover the gate electrode 2.
is formed. An Si film 4, an n'' Si film 5, and a source/drain electrode 6 are formed in this order on the upper surface of the gate insulating film 3 in the area immediately above the gate electrode 2. Then, a recessed portion reaching the Si film 4 from the upper surface is formed. 8 is formed, and a picture element electrode 7 connected to the source/drain electrode is also formed, and its upper surface is further covered with a surface protection film 9.Thereby, the arrangement of the gate electrode 2 is changed. Part is T
The 0-element electrode 7 portion of the FT section 1 is used as the picture element section 11.
ところで、このようなアクティブマトリクスＬＣＤの表
面保護膜９は、ＴＦＴ部１部長０絵素部１１の全体を覆
うように形成される。従来、この表面保護膜９は、第４
図にも示すように、シリコン酸化膜（ＳｉＮ２）、シリ
コンオキシナイトライド膜（ＳｉＯ，Ｎｙ）又はシリコ
ン窒化膜（Ｓ ｉ３ Ｎ４ ）等が使用されている。ま
た、これらの組成一定の膜の他、５ｉＯ３−８ｔ３Ｎ４
等の２層構造の膜も使用されている。Incidentally, the surface protection film 9 of such an active matrix LCD is formed so as to cover the entire TFT section 1 length 0 pixel section 11. Conventionally, this surface protective film 9
As shown in the figure, a silicon oxide film (SiN2), a silicon oxynitride film (SiO, Ny), a silicon nitride film (S i3 N4), etc. are used. In addition to these films with constant composition, 5iO3-8t3N4
A two-layer structure membrane such as the above is also used.
［発明が解決しようとする課題］
しかしながら、上述した従来のアクティブマトリクスＬ
ＣＤでは、その表面保護膜に以下のような問題点があっ
た。[Problem to be solved by the invention] However, the above-mentioned conventional active matrix L
CDs have the following problems with their surface protective films.
即ち、シリコン酸化膜は、アルカリイオンに対するバリ
ア効果が少なく、信頼性があまり高くないという問題点
がある。That is, the silicon oxide film has a problem in that it has a low barrier effect against alkali ions and is not very reliable.
シリコン窒化膜では、アルカリイオンに対するバリア効
果は十分であるが、Ｓｉ上に直接形成した場合、膜応力
が大きいため、膜厚が厚いとクラック及び膜剥がれ等を
招き、薄いとチャネル掘り込み部８の段差の部分での被
覆性が芳しくないという問題がある。また、シリコン窒
化膜は、界面準位密度が大きく、チャネルリークを発生
させるという問題点もある。A silicon nitride film has a sufficient barrier effect against alkali ions, but when it is formed directly on Si, the film stress is large, so if the film is thick, it will cause cracks and film peeling, and if it is thin, it will cause damage to the channel dug part 8. There is a problem in that the coverage at the step portion is not good. Further, the silicon nitride film has a large interface state density, which causes channel leakage.
また、シリコンオキシナイトライド膜は、両者の中間の
性質を有するが、最適成長条件の再現安定性が悪く、最
適条件をいえども膜質は中途半端な性質である。Furthermore, silicon oxynitride films have properties intermediate between the two, but the stability of reproducing the optimum growth conditions is poor, and even under the optimum conditions, the film quality is mediocre.
更に、Ｓ １ｏ２−８ ｉ３ Ｎ４の２層構造膜は、Ｓ
ｉＯ２とＳｉ３Ｎ４との界面での膜歪及び界面準位密度
が大きく、クラック及び膜剥がれ等が発生するという問
題点があった。Furthermore, the two-layer structure film of S 1o2-8 i3 N4 is
There was a problem in that the film strain and interface state density at the interface between iO2 and Si3N4 were large, resulting in cracks and film peeling.
本発明はかかる問題点に鑑みてなされたものであって、
クラック及び膜剥がれ等の問題が発生することがなり、
シかもアルカリイオンに対するバリア効果が高いアクテ
ィブマトリクス型液晶ディスプレイ装置を提供すること
を目的とする。The present invention has been made in view of such problems, and includes:
Problems such as cracks and film peeling may occur.
An object of the present invention is to provide an active matrix liquid crystal display device that has a high barrier effect against alkaline ions.
［課題を解決するための手段］
本発明に係るアクティブマトリクス型液晶ディスプレイ
装置は、エツチングによって掘込まれたバックチャネル
上に表面保護膜が形成さ゛れたアクティブマトリクス型
液晶ディスプレイ装置において、前記表面保護膜は、前
記バックチャネルの上に半導体シリコンに接して形成さ
れたシリコン酸化膜と、このシリコン酸化膜上に形成さ
れたシリコンオキシナイトライド膜と、このシリコンオ
キシナイトライド膜上に形成されたシリコン窒化膜とか
らなり、且つ前記シリコンオキシナイトライド膜は、前
記シリコン酸化膜側から前記シリコン窒化膜側へその組
成がなだらかに変化していることを特徴とする。[Means for Solving the Problems] An active matrix liquid crystal display device according to the present invention is an active matrix liquid crystal display device in which a surface protective film is formed on a back channel dug by etching. is a silicon oxide film formed on the back channel in contact with semiconductor silicon, a silicon oxynitride film formed on this silicon oxide film, and a silicon nitride film formed on this silicon oxynitride film. The silicon oxynitride film is characterized in that its composition gradually changes from the silicon oxide film side to the silicon nitride film side.
［作用コ
本発明によれば、バックチャネル側の半導体シリコンに
は、シリコン酸化膜が形成されているので、膜応力及び
界面準位密度を小さくすることができ、安定で良好な特
性を得ることができる。また、中間層であるシリコンオ
キシナイトライド膜の組成を緩やかに変化させるように
しているので、従来のＳｉＯ□−８ｔ３Ｎ４界面にみら
れるような界面準位の局在がな（、膜応力が小さく、厚
膜化が可能で、膜剥がれの心配はない。更に、最上部は
、シリコン窒化膜であるため、アルカリイオンの汚染及
び侵入に対するバリア効果も十分である。[Function] According to the present invention, since a silicon oxide film is formed on the semiconductor silicon on the back channel side, film stress and interface state density can be reduced, and stable and good characteristics can be obtained. I can do it. In addition, since the composition of the silicon oxynitride film, which is the intermediate layer, is gradually changed, there is no localization of interface states (as seen in the conventional SiO□-8t3N4 interface), and the film stress is small. The film can be thickened and there is no fear of film peeling.Furthermore, since the top layer is a silicon nitride film, it has a sufficient barrier effect against contamination and intrusion of alkali ions.
［実施例コ
以下、添付の図面に基づいて本発明の実施例について説
明する。[Embodiments] Hereinafter, embodiments of the present invention will be described based on the accompanying drawings.
先ず、ＴＦＴ部１部長０絵素部１１を形成後、チャネル
掘り込み部に、２８００人の段差を覆うように、表面保
護膜としてプラズマＣＶＤ法により、モノシラン（Ｓｉ
Ｈ４） −一酸化窒素（ＮＯ）系でＳｉＯ２膜を１００
０人を形成し、次いで５ｉＨ４−ＮＯ−アンモニア（Ｎ
Ｈ３）系でシリコンオキシナイトライド膜を２０００人
形成する。成長させる温度は２７０℃である。シリコン
オキシナイトライド形成時は、ＳｉＨ４の流量を一定と
し、Ｎｏ及びＮ Ｈ３流量は夫々時間と共に減少、及び
増大するように設定し、シリコンオキシナイトライドの
組成が、ＳｉＯ２側からＳｉ３Ｎ４側に連続的に変化す
るようにする。First, after forming the TFT section 1 length 0 pixel section 11, monosilane (Si
H4) - 100% SiO2 film with nitric oxide (NO) system
0 and then 5iH4-NO-ammonia (N
Form 2000 silicon oxynitride films using the H3) system. The growth temperature is 270°C. When forming silicon oxynitride, the flow rate of SiH4 was kept constant, and the flow rates of No and N H3 were set to decrease and increase with time, respectively, so that the composition of silicon oxynitride was continuously changed from the SiO2 side to the Si3N4 side. so that it changes to
このようにして形成した膜の組成を第１図に示す。この
図に示すように、表面保護膜２０は、Ｓｉ膜４に接する
８１０２層２１、この８１０２層２１に接するシリコン
オキシナイトライド（Ｓ Ｉ Ｘ Ｎ ｙ ）層２２及
びこれに接するＳｉ３Ｎ４層２３の三層構造である。The composition of the film thus formed is shown in FIG. As shown in this figure, the surface protection film 20 consists of three layers: an 8102 layer 21 in contact with the Si film 4, a silicon oxynitride (S I It has a layered structure.
また、第２図は、表面保護膜２０の膜厚方向の組成変化
を示すグラフ図である。Moreover, FIG. 2 is a graph diagram showing compositional changes in the film thickness direction of the surface protection film 20.
膜厚ｄｔからＯ２に位置するシリコンオキシナイトライ
ド（Ｓ ｔｘ Ｎ＆ ）層２２は、８１０２層２１と接
する膜厚Ｏ１付近でｘ ＝ ２１ ’！ ＝ Ｏ１Ｓｔ
３Ｎ４層２３と接する膜厚Ｏ２付近でＸ＝０゜ｙ＝４／
３となっており、その組成が緩やかに変化している。The silicon oxynitride (S tx N& ) layer 22 located at O2 from the film thickness dt has x = 21'! near the film thickness O1 where it contacts the 8102 layer 21. = O1St
Near the film thickness O2 in contact with the 3N4 layer 23, X=0°y=4/
3, and its composition changes gradually.
このような表面保護膜２０を形成することにより、バッ
クチャネル側での膜応力及び界面準位密度を小さくする
ことができ、安定で良好なＴＰＴ特性を得ることができ
る。また、中間層のオキシナイトライド層２２の組成が
緩やかに変化しているので、界面準位密度の局在を防止
することができ、膜応力が少なく、厚膜化可能で、膜剥
がれの問題を解決することができる。更に、最上部は５
ｔａＮ４層２３であるため、アルカリイオンに対するバ
リア効果も十分となる。By forming such a surface protection film 20, the film stress and interface state density on the back channel side can be reduced, and stable and good TPT characteristics can be obtained. In addition, since the composition of the intermediate oxynitride layer 22 changes gradually, it is possible to prevent localization of the interface state density, reduce film stress, allow for thicker films, and reduce the problem of film peeling. can be solved. Furthermore, the top is 5
Since the taN4 layer 23 has a sufficient barrier effect against alkali ions.
なお、上記実施例と同じチャネル掘り込み２８００人の
段差を覆うように５ｉＨ４−炭酸ガス（ＣＯ２）系で５
ｉ０２を１０００人、５ｉＨ４−ＣＯ９−ＮＨ３系でシ
リコンオキシナイトライドを２０００人、Ｓ １Ｈ４−
ＮＨ＊系でＳｉ３Ｎ４を１０００人形成するようにして
もよい。成長温度は、２７０℃である。In addition, 5iH4-carbon dioxide (CO2) system was used to cover the steps of 2,800 people dug in the same channel as in the above example.
i02 for 1000 people, 5iH4-CO9-NH3 system silicon oxynitride for 2000 people, S 1H4-
1000 Si3N4 may be formed in the NH* system. The growth temperature is 270°C.
本実施例では、酸素供給源ガスとしてＣＯ２を使用して
いるため、先の実施例のＮｏガスにみられる腐食性、毒
性及び支燃性等の問題が発生しないとい利点がある。In this example, since CO2 is used as the oxygen source gas, there is an advantage that problems such as corrosivity, toxicity, and combustibility that are observed with the No gas in the previous example do not occur.
なお、ＳｉＯ２，５ｉＯｘＮ、、及びＳｉ３Ｎ４の各膜
の膜厚は、チャネル掘り込み部深さ、ＴＦＴ特性、信頼
性等を考慮して決定すればよい。Note that the thickness of each of the SiO2, 5iOxN, and Si3N4 films may be determined by taking into account the depth of the channel digging portion, TFT characteristics, reliability, and the like.
また、バックチャネルＳｉに影響を与えずに良好なＴＦ
Ｔ特性をを得るためには、ＳｉＯ２膜厚が３００Å以上
であることが望ましい。さらに、アルカリイオンに対す
る十分なバリア効果を得るためには、Ｓｉ３Ｎ４膜の膜
厚は、３００λ以上が望ましい。５ｉｘｔｙは、チャネ
ル掘り込み部の段差被覆性が良好となる膜厚に設定され
る。In addition, a good TF can be achieved without affecting the back channel Si.
In order to obtain T characteristics, it is desirable that the SiO2 film thickness is 300 Å or more. Furthermore, in order to obtain a sufficient barrier effect against alkali ions, the thickness of the Si3N4 film is preferably 300λ or more. 5ixty is set to a film thickness that provides good step coverage in the channel dug portion.
なお、本発明は、ＴＦＴアクティブマトリクス型ＬＣＤ
のみならず、ＭＩＭ型等の他のタイプのアクティブマト
リクス型ＬＣＤにも適用可能であることは言うまでもな
い。Note that the present invention is a TFT active matrix type LCD.
Needless to say, the present invention is also applicable to other types of active matrix LCDs such as MIM type.
［発明の効果コ
以上述べたように、本発明によれば、エツチングによっ
て掘込まれたバックチャネル上の表面保護膜をシリ・コ
ン酸化膜とシリコンオキシナイトライド膜とシリコン窒
化膜とからなる三層構造とし、しかも前記シリコンオキ
シナイトライド膜の組成を前記シリコン酸化膜側から前
記シリコン窒化膜側へと緩やかに変化させるようにした
から、クラック及び膜剥がれ等の問題が発生することが
なく、しかもアルカリイオンに対するバリア効果が高い
。[Effects of the Invention] As described above, according to the present invention, the surface protective film on the back channel dug by etching is formed by forming a three-layer film consisting of a silicon oxide film, a silicon oxynitride film, and a silicon nitride film. Since the silicon oxynitride film has a layered structure and the composition of the silicon oxynitride film changes gradually from the silicon oxide film side to the silicon nitride film side, problems such as cracking and film peeling do not occur. Moreover, it has a high barrier effect against alkali ions.
このため、製造歩留まりが高く、初期特性も従来のもの
より優れる等の効果を奏する。Therefore, the manufacturing yield is high and the initial characteristics are superior to conventional ones.
第１図は本発明の実施例に係るアクティブマトリクス型
液晶ディスプレイ装置の表面保護膜の組成を示す模式図
、第２図は同保護膜の組成を定性的に示したグラフ図、
第３図は従来のアクティブマトリクス型液晶ディスプレ
イ装置の構成を示す断面図、第４図は同装置における従
来の表面保護膜の組成を示す模式図である。
１；ガラス基板、２；ゲート電極、３；ゲート絶縁膜、
４：Ｓｉ膜、５ ； ｎ ” Ｓ ｉ膜、６；ソース・
ドレイン電極、７；絵素電極、８；チャネル掘り込み部
、９，２０；表面保護膜、１０；ＴＦ’Ｔ部、１１；絵
素部、２１：ＳｉＯ２層、２２；シリコンオキシナイト
ライド層、２３；Ｓｉ３Ｎ４層
憤
艶叫
（ｔ））ｒ、［ｉｊ
ｆ醋く３FIG. 1 is a schematic diagram showing the composition of a surface protective film of an active matrix liquid crystal display device according to an embodiment of the present invention, and FIG. 2 is a graph diagram qualitatively showing the composition of the protective film.
FIG. 3 is a cross-sectional view showing the structure of a conventional active matrix liquid crystal display device, and FIG. 4 is a schematic diagram showing the composition of a conventional surface protective film in the same device. 1; glass substrate, 2; gate electrode, 3; gate insulating film,
4: Si film, 5; n'' Si film, 6: Source
Drain electrode, 7; picture element electrode, 8; channel dug part, 9, 20; surface protective film, 10; TF'T part, 11; picture element part, 21: SiO2 layer, 22; silicon oxynitride layer, 23; Si3N4 layer exasperation (t)) r, [ij f 3
Claims (2)
に表面保護膜が形成されたアクティブマトリクス型液晶
ディスプレイ装置において、前記表面保護膜は、前記バ
ックチャネルの上に半導体シリコンに接して形成された
シリコン酸化膜と、このシリコン酸化膜上に形成された
シリコンオキシナイトライド膜と、このシリコンオキシ
ナイトライド膜上に形成されたシリコン窒化膜とからな
り、且つ前記シリコンオキシナイトライド膜は、前記シ
リコン酸化膜側から前記シリコン窒化膜側へその組成が
なだらかに変化していることを特徴とするアクティブマ
トリクス型液晶ディスプレイ装置。(1) In an active matrix liquid crystal display device in which a surface protective film is formed on a back channel dug by etching, the surface protective film is a silicon oxide film formed on the back channel in contact with semiconductor silicon. a silicon oxynitride film formed on the silicon oxide film, and a silicon nitride film formed on the silicon oxynitride film, and the silicon oxynitride film is formed on the silicon oxide film. 1. An active matrix liquid crystal display device characterized in that the composition thereof gradually changes from the silicon nitride film side to the silicon nitride film side.
夫々３００Åの膜厚からなるものであることを特徴とす
る請求項１に記載のアクティブマトリクス型液晶ディス
プレイ装置。(2) The silicon oxide film and the silicon nitride film are
2. The active matrix liquid crystal display device according to claim 1, wherein each layer has a thickness of 300 Å.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11263990A JP2536230B2 (en) | 1990-04-30 | 1990-04-30 | Active matrix liquid crystal display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11263990A JP2536230B2 (en) | 1990-04-30 | 1990-04-30 | Active matrix liquid crystal display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0412330A true JPH0412330A (en) | 1992-01-16 |
| JP2536230B2 JP2536230B2 (en) | 1996-09-18 |
Family
ID=14591763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11263990A Expired - Lifetime JP2536230B2 (en) | 1990-04-30 | 1990-04-30 | Active matrix liquid crystal display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2536230B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5620910A (en) * | 1994-06-23 | 1997-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device with a gate insulating film consisting of silicon oxynitride |
| US5773325A (en) * | 1994-06-16 | 1998-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a variable concentration SiON gate insulating film |
| JP2010117733A (en) * | 2005-12-28 | 2010-05-27 | Semiconductor Energy Lab Co Ltd | Display |
| JP2013098322A (en) * | 2011-10-31 | 2013-05-20 | Fujifilm Corp | Photoelectric conversion element and manufacturing method thereof, and imaging element and manufacturing method thereof |
| US8866136B2 (en) * | 2009-12-02 | 2014-10-21 | Samsung Electronics Co., Ltd. | Transistor, method of manufacturing the transistor and electronic device including the transistor |
-
1990
- 1990-04-30 JP JP11263990A patent/JP2536230B2/en not_active Expired - Lifetime
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5773325A (en) * | 1994-06-16 | 1998-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a variable concentration SiON gate insulating film |
| US5620910A (en) * | 1994-06-23 | 1997-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing semiconductor device with a gate insulating film consisting of silicon oxynitride |
| JP2010117733A (en) * | 2005-12-28 | 2010-05-27 | Semiconductor Energy Lab Co Ltd | Display |
| JP2012032836A (en) * | 2005-12-28 | 2012-02-16 | Semiconductor Energy Lab Co Ltd | Display device |
| US8634044B2 (en) | 2005-12-28 | 2014-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| US9703140B2 (en) | 2005-12-28 | 2017-07-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| US10444564B1 (en) | 2005-12-28 | 2019-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| US10739637B2 (en) | 2005-12-28 | 2020-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| US11269214B2 (en) | 2005-12-28 | 2022-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| US12189232B2 (en) | 2005-12-28 | 2025-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| US8866136B2 (en) * | 2009-12-02 | 2014-10-21 | Samsung Electronics Co., Ltd. | Transistor, method of manufacturing the transistor and electronic device including the transistor |
| JP2013098322A (en) * | 2011-10-31 | 2013-05-20 | Fujifilm Corp | Photoelectric conversion element and manufacturing method thereof, and imaging element and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2536230B2 (en) | 1996-09-18 |
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