JPH04116158A - Film forming device - Google Patents

Abstract

PURPOSE:To recognize the state of the vapor deposited film to be formed on the surface of a material to be vapor-deposited by providing plural electrodes on a supporting member which supports the material to be vapor-deposited and measuring the currents flowing in these electrodes. CONSTITUTION:The plural electrodes 31 are provided on the supporting member 13 of the device for depositing an ionized material for vapor deposition on the material 14 to be vapor-deposited supported by using the supporting member 13. The electrodes 31 are insulated from each other by an insulator 32 and the above-mentioned material for vapor deposition is deposited by evaporation on the electrodes 31. The currents flowing in the above-mentioned electrodes 31 are measured to know the vapor deposition rate of the material for vapor deposition vapor depositing on the electrodes 31. The state of the material for vapor deposition vapor-depositing on the material 14 to be vapor-deposited is thus recognized.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a film forming apparatus for forming a film, particularly to a film forming apparatus such as an ion cluster beam evaporation apparatus.

[Conventional technology]

Figures 3 to 5 are, for example, illustrated in the literature ``Automatic operation technology for ion cluster beam evaporation equipment (AUTOMATTCOPER)''.
ATION TECI-INIQLIES OF l0
NIZED CLISTER BEAM DEPOSIT
ION APPARATUS) J (Proc, 1
0th Symp.

Figures 1 and 8 of 15AT'86) show an ion cluster beam (ICB) evaporation apparatus (hereinafter referred to as ICB evaporation apparatus), which is a conventional film forming apparatus, and Fig. 3 shows the configuration of the apparatus. 4 is a plan view of the substrate holder part, and FIG. 5 is a cross-sectional view of the substrate holder along the cut plane ■-■ in FIG.
(3) is a nozzle installed on the top surface of the crucible (1), and the vapor deposition material (2) heated through the crucible (1) evaporates and spouts out. ) is the steam ejected from this nozzle (3) and partially contains clusters (4a).

(5) A filament that heats the crucible (1) by electron bombardment, (6) is an AC power source that passes current through this filament ((5) to raise it to a high temperature and emit thermionic electrons, and ■ is a filament (emitted by 51). Electron crucible (1)
Change the potential of the crucible (1) so that it impinges on the filament (
The first voltage is applied with a bias voltage that is kept higher than the potential of 9.
A DC power source is an ionizing filament that emits electrons to ionize a part of the steam (4) into a positive charge by electron collision. , a grid that collides with the steam (2) ejected from the crucible (1), αO) is an AC power source that causes the ionization filament 8 to generate heat, and (11) is a grid that makes the potential of the ionization filament (8) lower than the potential of the grid (9). 12) is an accelerating electrode that accelerates the ionized vapor (A); (13) is a metal substrate holder that is a support member; (14) is this substrate holder (
13) are supported by four disk-shaped substrates (see Figures 4 and 5), which are the objects to be deposited, and (15) is this substrate (14).
and a vapor deposited film (16) formed on the surface of the substrate holder (13), the potential of the accelerating electrode (12) is adjusted to the grid (
a third DC power supply that maintains the potential at a value lower than the potential of (17);
) is a crucible (1) kept at the same potential as the filament (9)
heat shield plate, (18) crucible (1), vapor deposition material■
, a substrate holder (13), a substrate (14), etc., and is a vacuum chamber for placing them in a reduced pressure atmosphere.

(19) is a sheathed thermocouple installed at the end of the substrate holder (13) to detect the temperature of the substrate holder (13), and the sheath (19a) (Fig. 5) is attached to the substrate holder (13) by a screw (not shown). is fixed to and electrically connected to. (20) is a temperature indicator that indicates the temperature detected by the sheath thermocouple (19), (21) is the substrate holder (13)
and an ion ammeter (21) that measures the ion current flowing into the substrate (14).
19a) as a conductor to connect the substrate holder (13) to the ion ammeter (21).

Although not shown, the temperature of the substrate holder (13) measured with a sheath thermocouple (19) and the ion ammeter (21)
) A measurement control panel is separately provided to store, control, and display measurement data such as ion current measured by the ion current.

Next, the operation will be explained. The filament (town) is heated by the AC power supply (6) and thermionic electrons are emitted, and the emitted thermionic electrons are transferred to the crucible (1) by the positive voltage applied to the crucible (1) by the first DC power supply (to). 1) and heats the crucible (1).The evaporated material in the crucible (1) is heated and evaporated through the crucible (1), and is ejected into the reduced pressure atmosphere from the nozzle (3).Gushing steam (4
) collides with the electron e which has jumped out from the ionized filament (8) and has been drawn out to the grid (9), and is ionized into positively charged ions. These positive ions are accelerated by the electric field generated by the accelerating electrode (12) and collide with the substrate (14) to form a deposited film (15).

At this time, the amount of ion current flowing into the substrate (14) and substrate holder (13) (the substrate (14) is electrically connected to the substrate holder (13)) is determined by the amount of ion current flowing into the sheathed thermocouple (
The ion ammeter (21) is passed through the sheath (19a) of the
) is guided and measured. Further, the temperature of the substrate holder (13) is detected by a sheathed thermocouple (19) and measured by a temperature indicator (20).

Note that the amount per unit area of ionized vapor (a) that evaporates from inside the crucible (1) and reaches the substrate (14) and substrate holder (13), that is, the ion current density, is
3) It is not constant over the entire evaporation area on the substrate holder (13), but has an individual distribution depending on the evaporation conditions, etc. In this example, it has a distribution mainly biased in the radial direction on the substrate holder (13).

[Problem to be solved by the invention]

Since the conventional thin film forming apparatus is configured as described above, it is possible to measure only the total amount of ion current that reaches the entire substrate (14) and substrate holder (13), and only the amount of ion current that reaches the entire substrate (14) and the substrate holder (13). It was not possible to measure the amount of ion current reaching the ion current, and it was also not possible to know the distribution, for example, in the radial direction on the substrate holder (13), that is, the distribution on the substrate (14). Therefore, it has been difficult to accurately grasp the state of the film formed on the substrate (14).

This invention was made to solve the above-mentioned problems, and it is an object of the present invention to provide a film forming apparatus that allows the state of a film formed on an object to be deposited to be known.

[Means to solve the problem]

In the film forming apparatus according to the present invention, a plurality of electrodes that are insulated from each other and on which an evaporation substance is deposited are provided on a support member that supports an object to be deposited, and the current flowing through each electrode can be determined.

[Effect]

In the second invention, by knowing the current flowing through the electrodes, the deposition rate of the vaporized substance deposited on each electrode can be determined. Since each electrode is disposed on the support member together with the material to be deposited,
By knowing the deposition rate of the evaporation substance deposited on each electrode, the state of the evaporation substance on the object to be evaporated can be grasped.

[Embodiments of the invention]

1 and 2 show essential parts of an embodiment of the present invention, FIG. 1 is a plan view of the substrate holder section, and FIG.
FIG. 2 is a sectional view showing a cross section taken along the cutting plane ■-■ in the figure. (31) is an ion current detection plate which is an electrode, (32)
is an insulator, and the ion current detection plate (31) is supported by the substrate holder (13) via the insulator (32), and as shown in FIG.
A total of 9 pieces are arranged in a cross shape between 4). (33) is an ion ammeter [1! and an ion current detection plate (31)
The ion current flowing into the ion current is individually guided to an ion ammeter (not shown).

The rest of the structure is the same as that of the conventional example shown in FIG. 4, so corresponding parts are given the same reference numerals and explanations will be omitted.

In the ICB vapor deposition apparatus configured as shown above, vapor 4 generated from inside the crucible (1) and separated from the substrate (14)
, reaches the substrate holder (13) and the ion current detection plate (31) and is deposited. Therefore, the ion current detection plate (31
) By measuring the ion current flowing through the ion current detection plate (31), it is possible to know the amount of evaporation material deposited on the ion current detection plate (31), and the distribution of ion current density on the substrate holder (13) can be determined.

Based on this, the density, distribution, and total amount of ion current flowing into the substrate (14) are calculated, and the state of the film formed on the substrate (14) can be estimated.

Further, by knowing that the desired film is formed on the substrate (14), the quality of the film can be guaranteed.

Furthermore, it is also possible to grasp the state of the membrane and adjust the device as necessary.

In addition, in one embodiment shown in the first section, each substrate (1
4) is supported by the substrate holder (13) via an insulator, and the current flowing through each substrate (14) is measured to understand the overall condition of the substrate (14) or to compare it with the above calculation results. You may also use a confirmation method.

Although the above embodiments have been explained using an ICB deposition apparatus as an example, similar effects can be obtained even if the present invention is applied to other ion beam apparatuses, such as ion blating apparatuses and ion implantation apparatuses.

Further, in this invention, evaporation is used to include evaporation (sublimation) from a solid.

〔Effect of the invention〕

As described above, according to the present invention, a plurality of electrodes that are insulated from each other and on which the evaporation material is deposited are provided on the support member that supports the object to be evaporated, and it is possible to know the current flowing through each electrode. It is possible to understand the state of films formed on objects.

[Brief explanation of drawings]

1 and 2 show essential parts of an embodiment of the present invention, FIG. 1 is a plan view of the substrate holder section, FIG. 2 is a cross-sectional view taken along the cut plane ■-■ in FIG. 3 to 5 show a conventional JCB evaporation apparatus, in which FIG. 3 is a configuration diagram of an ICB evaporation apparatus, FIG. 4 is a plan view of the substrate holder section, and FIG.
The figure is a sectional view taken along the section line ■--■ in FIG. 4. In the figure, (2) is the vapor deposition material, (2) is the vapor, and (8)
is an ionized filament, (9) is a grid, (13)
is a substrate holder, (14) is a substrate, and (15) is a deposited film (3).
1) is an ion current detection plate, (32) is an insulator, (33)
) is the ion current measurement line. Note that the same reference numerals in each figure indicate the same or corresponding parts.

Claims (1)

[Claims] In a modeling apparatus for depositing an ionized evaporative substance onto an object to be evaporated supported by a supporting member, a plurality of electrodes are provided on the supporting member and are insulated from each other and on which the evaporative substance is deposited, and it is possible to determine the current flowing through each electrode. A model forming device characterized by: