[go: up one dir, main page]

JPH0410578B2 - - Google Patents

Info

Publication number
JPH0410578B2
JPH0410578B2 JP5085384A JP5085384A JPH0410578B2 JP H0410578 B2 JPH0410578 B2 JP H0410578B2 JP 5085384 A JP5085384 A JP 5085384A JP 5085384 A JP5085384 A JP 5085384A JP H0410578 B2 JPH0410578 B2 JP H0410578B2
Authority
JP
Japan
Prior art keywords
crystal
transmittance
light
sample
dislocation density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5085384A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60195437A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5085384A priority Critical patent/JPS60195437A/ja
Publication of JPS60195437A publication Critical patent/JPS60195437A/ja
Publication of JPH0410578B2 publication Critical patent/JPH0410578B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/59—Transmissivity
    • G01N21/5907—Densitometers
    • G01N21/5911—Densitometers of the scanning type

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP5085384A 1984-03-19 1984-03-19 結晶の評価方法 Granted JPS60195437A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5085384A JPS60195437A (ja) 1984-03-19 1984-03-19 結晶の評価方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5085384A JPS60195437A (ja) 1984-03-19 1984-03-19 結晶の評価方法

Publications (2)

Publication Number Publication Date
JPS60195437A JPS60195437A (ja) 1985-10-03
JPH0410578B2 true JPH0410578B2 (de) 1992-02-25

Family

ID=12870276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5085384A Granted JPS60195437A (ja) 1984-03-19 1984-03-19 結晶の評価方法

Country Status (1)

Country Link
JP (1) JPS60195437A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH033046Y2 (de) * 1985-12-19 1991-01-28
DE10036880A1 (de) 2000-07-28 2002-02-07 Basf Ag Regelung einer Waschkolonne in einem Schmelzkristallisationsprozess

Also Published As

Publication number Publication date
JPS60195437A (ja) 1985-10-03

Similar Documents

Publication Publication Date Title
KR950010389B1 (ko) 반도체 결함 검출 방법
JPS63124942A (ja) 特に半導体スライスの表面性状を測定するための方法と装置
Lile et al. Semiconductor profiling using an optical probe
JPH07105427B2 (ja) 半導体材料のライフタイム評価方法とその装置
JPH0410578B2 (de)
US4755049A (en) Method and apparatus for measuring the ion implant dosage in a semiconductor crystal
US4777146A (en) Fabrication process involving semi-insulating material
JP2015232450A (ja) 膜厚の測定方法及び膜厚測定装置
JP3730289B2 (ja) 半導体ウェーハの欠陥測定方法及び同装置
JPH033946B2 (de)
Nango et al. An optical study on dislocation clusters in a slowly pulled silicon crystal
JPH07167793A (ja) 位相差半導体検査装置および半導体装置の製造方法
US5512999A (en) Method for nondestructive measurement of dislocation density in GaAs
JPH11281576A (ja) 結晶内のフォトルミネッセンス計測装置
KR200207691Y1 (ko) 웨이퍼 검사 시스템
JPS61173171A (ja) 半導体ウエハの抵抗率測定法
JP2715999B2 (ja) 多結晶材料の評価方法
JPH10154734A (ja) 半導体結晶の評価方法
JP2856562B2 (ja) 絶縁膜の検査方法
JPH06317535A (ja) 半導体検査装置およびそれを用いた半導体製造方法
JPH01181434A (ja) ビーム変調分光装置
Knowlton et al. Microdefects in nitrogen doped FZ silicon revealed by Li+ drifting
White et al. Contactless nondestructive technique for the measurement of minority-carrier lifetime and diffusion length in silicon
JPS62122141A (ja) 半導体基板の検査方法
SU1711272A1 (ru) Способ определени диффузионной длины электронов в полупроводниках р-типа проводимости