JPH0410446A - Formation of bump electrode combination - Google Patents
Formation of bump electrode combinationInfo
- Publication number
- JPH0410446A JPH0410446A JP2111399A JP11139990A JPH0410446A JP H0410446 A JPH0410446 A JP H0410446A JP 2111399 A JP2111399 A JP 2111399A JP 11139990 A JP11139990 A JP 11139990A JP H0410446 A JPH0410446 A JP H0410446A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- bump
- bump electrode
- electrodes
- indium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1301—Shape
- H01L2224/13011—Shape comprising apertures or cavities, e.g. hollow bump
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1301—Shape
- H01L2224/13016—Shape in side view
- H01L2224/13018—Shape in side view comprising protrusions or indentations
- H01L2224/13019—Shape in side view comprising protrusions or indentations at the bonding interface of the bump connector, i.e. on the surface of the bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8112—Aligning
- H01L2224/81136—Aligning involving guiding structures, e.g. spacers or supporting members
- H01L2224/81138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
- H01L2224/81141—Guiding structures both on and outside the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81192—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はバンプ電極結合方法に関し、特に一対の半導体
チップ相互間を電気的に接続するバンプ電極の対の結合
方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for bonding bump electrodes, and more particularly to a method for bonding a pair of bump electrodes for electrically connecting a pair of semiconductor chips.
一般に、赤外線イメージセンサとしては、半導体基板上
に赤外線検出素子が配置されている光電変換用半導体チ
ップと、検出信号を処理する回路か形成されたシリコン
ＩＣ半導体チップとをバンプ結合したハイブリッド型赤
外線イメージセンサか知られている。この赤外線イメー
ジセンサに用いられるバンプ電極の結合方法は、例えば
、特開昭５９−１５５１６２号公報に示されているよう
に、両チップの各々対応する位置にイシジウム等の軟質
金属からなる円柱状のバンプ電極を形成し、その対をな
すバンプ電極同士を目合わせして熱圧着していた。In general, an infrared image sensor is a hybrid infrared image sensor that bump-bonds a photoelectric conversion semiconductor chip in which an infrared detection element is arranged on a semiconductor substrate and a silicon IC semiconductor chip on which a circuit for processing a detection signal is formed. sensor or known. A method of bonding bump electrodes used in this infrared image sensor is, for example, as shown in Japanese Unexamined Patent Publication No. 59-155162, in which cylindrical bump electrodes made of a soft metal such as isidium are placed at corresponding positions on both chips. Bump electrodes were formed, and the paired bump electrodes were aligned and thermocompression bonded.
上述した従来のバンプ電極の結合方法では、対応するバ
ンプ電極同士が必ずしも充分には機械的、電気的に結合
されていなかった。即ち、インジウム等の軟質金属は酸
化され易いため、その表面に酸化被膜が形成されており
、円柱状バンプ電極の先端部の接合面同士を熱圧着する
際、その接合面同士は酸化被膜を介して熱圧着されるこ
ととなり、その酸化被膜が破れに＜＜、充分な結合か得
られない。In the conventional bump electrode coupling method described above, corresponding bump electrodes are not necessarily mechanically or electrically coupled to each other sufficiently. In other words, since soft metals such as indium are easily oxidized, an oxide film is formed on their surfaces. The oxide film will be bonded under heat and pressure, and if the oxide film breaks, a sufficient bond will not be obtained.
こうした不充分な結合は両チップ間の剥離、電気的導通
不良という故障や、接触抵抗の増加からくるノイズの増
大という特性の劣化を招く欠陥がある。Such insufficient bonding causes defects such as peeling between the two chips, failures such as poor electrical continuity, and deterioration of characteristics such as increased noise due to increased contact resistance.
特に、−射的には一つのハイブリッド型赤外線イメージ
センサチップではバンプ電極の接続点数は数千点以上あ
り、結合率即ち、充分に結合された接続点の割合を高め
ることができないという欠点があった。In particular, in a single hybrid infrared image sensor chip, the number of connection points of bump electrodes is several thousand or more, and there is a drawback that it is not possible to increase the coupling rate, that is, the ratio of sufficiently connected connection points. Ta.
そこで本発明の目的は、バンプ電極同士の結合が充分に
行え、バンプ結合率を向上させることか可能なバンプ電
極結合の形成方法を提供することにある。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a method for forming a bump-electrode bond that can sufficiently bond bump electrodes to each other and improve the bump bonding rate.
前記目的を達成するため、本発明に係るバンプ電極結合
の形成方法においては、２個の半導体チップの対向面に
向き合わせに設けられた第１及び第２のバンプ電極の対
は、軟質金属を柱状体に成型したものであり、柱状体同
士を熱圧接して一体化させるバンプ電極結合の形成方法
であって、第１のバンプ電極は、柱状体の端面に四部を
有し、
第２のバンプ電極は、柱状体の外径寸法が第１のバンプ
電極の外径より小径であり、かつ、柱状体内に錐状の硬
質金属製補助電極を芯材として内包しており、柱状体の
先端形状が錐状をなすものであり、
第２のバンプ電極を、前記第１のバンプ電極の凹部内に
食い込ませ、両柱状体間に作用する圧力で柱状体表面の
酸化被膜を削ぎ取り、柱状体表面の酸化被膜が除去され
て表面にあらわれた両バンプ電極の軟質金属同士を結合
させるものである。In order to achieve the above object, in the method for forming a bump-electrode bond according to the present invention, a pair of first and second bump electrodes provided facing each other on opposing surfaces of two semiconductor chips is made of a soft metal. The first bump electrode has four parts on the end face of the pillar, and the second bump electrode has four parts on the end face of the pillar. In the bump electrode, the outer diameter of the columnar body is smaller than the outer diameter of the first bump electrode, and the columnar body contains a conical hard metal auxiliary electrode as a core material. The second bump electrode is wedged into the concave portion of the first bump electrode, and the oxide film on the surface of the columnar body is scraped off by the pressure acting between the two columnar bodies. The oxide film on the body surface is removed and the soft metals of both bump electrodes exposed on the surface are bonded together.
本発明のバンプ電極結合の形成方法は、対をなす一方の
第１のバンプ電極はインジウム金属等の軟質金属を柱状
体に成型したもので、柱状体の結合面の表面が凹状にな
っており、他方の第２のバンプ電極はインジウム金属等
の軟質金属を柱状体に成型し、かつ軟質金属内に錐状の
硬質金属体を芯材として内包し、柱状体の先端形状を円
錐状に成型し、その柱状体の外径寸法を第１のバンプ電
極より小径としたものであり、両バンプ電極を熱圧着す
ると、第２のバンプ電極は第１のバンプ電極の凹面面に
スパイク状に食い込み、その際に第１のバンプ電極の凹
面部に付着した酸化被膜が第２のバンプを極の尖った先
端部で確実に剥離され、かつ第２のバンプ電極の食い込
みによる楔作用で両バンプ電極の表面が互いに擦り合う
ため、互いの表面の酸化被膜も削ぎとられることとなり
、両バンプ電極の接合部は酸化されていない純粋な金属
同士が結合することとなり、充分なバンプ結合か得られ
る。また、第１のバンプ電極に凹部を設けたことで、接
合時のバンプの膨らみか軽減でき、接合時の圧着力は第
２のバンプ電極の先端を円錐状にしたことにより、各バ
ンプの一点に集中するため、低い圧力で効率的に結合で
き、かつ各半導体素子にかかるダメージを抑えることが
できる。In the method of forming a bump-electrode bond of the present invention, the first bump electrode of the pair is formed by molding a soft metal such as indium metal into a columnar body, and the bonding surface of the columnar body is concave. , the other second bump electrode is formed by molding a soft metal such as indium metal into a columnar body, a cone-shaped hard metal body is contained within the soft metal as a core material, and the tip of the columnar body is molded into a conical shape. However, the outer diameter of the columnar body is smaller than that of the first bump electrode, and when both bump electrodes are thermocompression bonded, the second bump electrode digs into the concave surface of the first bump electrode in a spike shape. At that time, the oxide film adhering to the concave surface of the first bump electrode is reliably peeled off from the second bump by the sharp tip of the pole, and the wedge action caused by the biting of the second bump electrode causes both bump electrodes to be separated. Since the surfaces of the bump electrodes rub against each other, the oxide film on each other's surfaces is also scraped off, and the bond between the two bump electrodes is made up of unoxidized pure metals, resulting in a sufficient bump bond. In addition, by providing a recess in the first bump electrode, the bulge of the bump during bonding can be reduced, and by making the tip of the second bump electrode conical, the crimping force at the time of bonding can be reduced from one point on each bump. Since the semiconductor elements are concentrated, it is possible to bond efficiently at low pressure, and damage to each semiconductor element can be suppressed.
尚、第２のバンプ電極は、その先端形状が円錐状に限ら
れるものではなく、角錐状であってもよい。Note that the tip shape of the second bump electrode is not limited to a conical shape, but may be pyramidal.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第１図（ａ）〜（Ｃ）は本発明の一実施例を説明するた
めのプロセス順に示したバンプ電極の部分断面図、第２
図、第３図はそれぞれ本発明の一実施例を説明するため
のバンプ電極の部分斜視図及び断面図である。1(a) to 1(C) are partial sectional views of bump electrodes shown in the order of processes for explaining one embodiment of the present invention;
3 are a partial perspective view and a sectional view of a bump electrode, respectively, for explaining an embodiment of the present invention.
第２図に示すように、結合すべき一対の半導体チップ１
．２の各々に対応する電極接合部には、第１のバンプ電
１ｆｆ１４ ａ及び第２のバンプ電ｆｉ１４ｂか設置さ
れている。As shown in FIG. 2, a pair of semiconductor chips 1 to be combined
．． 2, a first bump electrode 1ff14a and a second bump electrode fi14b are installed.
この場合、第３図に示すように、一方の半導体チップ１
に形成した第１のバンプ電［４ａは、結合面に凹部３ａ
をもち、インジウムを円柱状体に成型してなるインジウ
ム電極３であり、他方の半導体チップ２に形成した第２
のバンプＣｔｆｉ４ｂは、銅金属でその先端を鋭利にし
た円錐状補助電極５に、インジウムからなるインジウム
被覆６を被覆して錐状の柱状体に成型し、かつ、その径
を第１のバンプ電極３より小さくしたものである。In this case, as shown in FIG.
The first bump electrode [4a] formed on the bonding surface has a recess 3a.
It is an indium electrode 3 formed by molding indium into a cylindrical body, and a second electrode formed on the other semiconductor chip 2.
The bump Ctfi4b consists of a conical auxiliary electrode 5 made of copper metal with a sharp tip, coated with an indium coating 6 made of indium, and formed into a conical columnar body, and the diameter of the conical auxiliary electrode 5 is set to be the same as that of the first bump electrode. It is smaller than 3.
次に、両生導体チップ１．２を対向させ各々のバンプ電
＆４ａ、４ｂが所定の対応する位置となるように目合わ
せする。次に、第１図（ａ）に示すように、各々の対応
しているバンプ電極４ ａ 、 ４ｂか接触している状
態から加熱と同時に、第１図（Ｃ）に示すように、第２
のバンプ電ｉｔｆ！４ｂか第１のバンプ電Ｎ４ａに食い
込んだ状態になるまで加圧することにより、熱圧着即ち
バンプ電極結合の形成が完了する。このとき、本発明で
は上記の加圧中に、第１図（ｂ）に示すように、錐状補
助電極５はインジウム電極３に四部３ａを通してインジ
ウム被覆６と一体に食い込み、これにより、インジウム
電極３の凹部３ａに付着した酸化液ＷＡ７が強制的に剥
離され、かつインジウムを極３とインジウム被覆６とが
擦り合うことにより、インジウム被Ｗ！６に付着した酸
化被膜７が削ぎ取られ、両バンプ電極４ａ、４ｂの接合
部８に酸化されていない純粋な金属表面が現れ、その金
属表面同士か結合されるため、この接合部８で充分な熱
圧着結合が行われる。Next, the bidirectional conductor chips 1.2 are made to face each other and aligned so that the bump electrodes &4a, 4b are at predetermined corresponding positions. Next, as shown in FIG. 1(a), the corresponding bump electrodes 4a and 4b are heated from a state where they are in contact with each other, and at the same time, as shown in FIG. 1(c), the second
Bump electric itf! By applying pressure until the first bump electrode N4b bites into the first bump electrode N4a, thermocompression bonding, that is, formation of the bump electrode bond is completed. At this time, in the present invention, during the above-mentioned pressurization, the conical auxiliary electrode 5 passes through the four parts 3a of the indium electrode 3 and bites into the indium coating 6, as shown in FIG. The oxidizing solution WA7 adhering to the recess 3a of the electrode 3 is forcibly peeled off, and the indium is rubbed between the electrode 3 and the indium coating 6, so that the indium coating W! The oxide film 7 attached to the bump electrodes 4a, 4b is scraped off, and a pure metal surface that is not oxidized appears at the joint 8 between the bump electrodes 4a, 4b, and the metal surfaces are bonded to each other, so this joint 8 is sufficient. A thermocompression bonding is performed.
尚、以上説明した実施例ではバンプ電極の接続点数が少
ないか、これが接続点数十点以上の数であっても同様な
効果を得ることができることを確認している。In the embodiments described above, it has been confirmed that the same effect can be obtained even if the number of connection points of the bump electrodes is small or even if the number of connection points is several tens or more.
更に、バンプ電極をなす軟質金属としてインジウムの他
に、アンチモン、ビスマス、鉛、亜鉛等を同様に用いる
ことができ、また補助電極をなす硬質金属として、銅、
ニッケル、金等も用いることができる。Furthermore, in addition to indium, antimony, bismuth, lead, zinc, etc. can be similarly used as the soft metal forming the bump electrode, and copper, copper, etc. can be used as the hard metal forming the auxiliary electrode.
Nickel, gold, etc. can also be used.
以上説明したように、本発明は、軟質金属からなるバン
プ電極の表面が凹状になった第１のバンプ電極と、硬質
金属に軟質金属を被覆させ、かつバンプ電極の先端が錐
状で第１のバンプ電極より小さい径になっている第２の
バンプ電極とを結合させるとき、第１のバンプ電極の凹
部に第２のバンプ電極が食い込むように結合させること
により、第２のバンプ電極の尖った先端部が酸化膜を破
ると同時に互いの表面の酸化膜も削ぎとられ、両バンプ
電極の接合部は酸化されていない金属同士の結合となり
、充分なバンプ圧着が行われａ械的、電気的に充分結合
された結合率が高く接触抵抗の低いバンプ電極結合を形
成することが可能となる効果がある。また、第１のバン
プ電極に凹部を設けたことで、接合時のバンプの膨らみ
が軽減でき、接合時の圧着圧力は、第２のバンプ電極の
先端を錐状にしたことにより、各バンプの一点に集中す
るため、従来よりも低い圧力で効率的に結合でき、かつ
各半導体素子にかかるタメージを抑えることができる効
果もある。As explained above, the present invention includes a first bump electrode having a concave surface made of a soft metal, a first bump electrode in which a hard metal is coated with a soft metal, and a tip of the bump electrode is conical. When bonding to a second bump electrode that has a smaller diameter than that of the bump electrode, the second bump electrode is bonded so that it bites into the recess of the first bump electrode, thereby reducing the sharpness of the second bump electrode. At the same time, the oxide film on each other's surface is scraped off, and the bond between both bump electrodes becomes a bond between unoxidized metals, and sufficient bump crimping is performed, resulting in a mechanical and electrical bonding. This has the effect of making it possible to form a bump-electrode bond that is sufficiently bonded, has a high bonding rate, and has a low contact resistance. In addition, by providing a concave portion in the first bump electrode, the bulge of the bump during bonding can be reduced, and by making the tip of the second bump electrode cone-shaped, the crimping pressure during bonding can be reduced. Since it is concentrated at one point, it can be bonded efficiently with a lower pressure than before, and it also has the effect of suppressing damage to each semiconductor element.
第１図（ａ）〜（Ｃ）は本発明の一実施例を説明するた
めのプロセス類に示したバンプ＠、極の部分断面図、第
２図は本発明の一実施例を説明するためのバンプ電極の
部分斜視図、第３図は同断面図である。
１．２・・・半導体チップ ３・・・インジウム電極３
ａ・・・四部
４ａ・・・第１のバンプ電極
４ｂ・・・第２のバンプ電極
′５・・・補助電極 ６・・・インジウム被覆
７・・・酸化液ＷＡ ８・・・接合部特許出願
人 日本電気株式会社
（・示
闇！／）バンプ電与
第２のバンプ電極
第
２図
第
図Figures 1 (a) to (C) are partial cross-sectional views of bumps and poles shown in processes for explaining an embodiment of the present invention, and Figure 2 is a partial cross-sectional view for explaining an embodiment of the present invention. FIG. 3 is a partial perspective view of the bump electrode, and FIG. 3 is a sectional view thereof. 1.2...Semiconductor chip 3...Indium electrode 3
a...Four parts 4a...First bump electrode 4b...Second bump electrode '5...Auxiliary electrode 6...Indium coating 7...Oxidizing liquid WA 8...Joint part patent Applicant: NEC Corporation (・Shiyami!/) Bump electrification Second bump electrode Figure 2
Claims (1)
られた第１及び第２のバンプ電極の対は、軟質金属を柱
状体に成型したものであり、柱状体同士を熱圧接して一
体化させるバンプ電極結合の形成方法であって、 第１のバンプ電極は、柱状体の端面に凹部を有し、 第２のバンプ電極は、柱状体の外径寸法が第１のバンプ
電極の外径より小径であり、かつ、柱状体内に錐状の硬
質金属製補助電極を芯材として内包しており、柱状体の
先端形状が錐状をなすものであり、 第２のバンプ電極を、前記第１のバンプ電極の凹部内に
食い込ませ、両柱状体間に作用する圧力で柱状体表面の
酸化被膜を削ぎ取り、柱状体表面の酸化被膜が除去され
て表面にあらわれた両バンプ電極の軟質金属同士を結合
させることを特徴とするバンプ電極結合の形成方法。(1) The pair of first and second bump electrodes, which are provided facing each other on the opposing surfaces of two semiconductor chips, are formed by molding a soft metal into a columnar body, and the columnar bodies are bonded together by heat pressure. A method for forming a bump-electrode bond in which the first bump electrode has a concave portion on the end face of the columnar body, and the second bump electrode has a columnar body having an outer diameter dimension that is smaller than that of the first bump electrode. The diameter is smaller than the outer diameter, and the columnar body contains a cone-shaped hard metal auxiliary electrode as a core material, and the tip of the columnar body has a conical shape, and the second bump electrode is The first bump electrode is inserted into the recess, and the oxide film on the surface of the columnar body is scraped off by the pressure applied between the two columnar bodies. A method for forming a bump electrode bond characterized by bonding soft metals together.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2111399A JP2782914B2 (en) | 1990-04-26 | 1990-04-26 | Method of forming bump electrode connection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2111399A JP2782914B2 (en) | 1990-04-26 | 1990-04-26 | Method of forming bump electrode connection |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0410446A true JPH0410446A (en) | 1992-01-14 |
| JP2782914B2 JP2782914B2 (en) | 1998-08-06 |
Family
ID=14560167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2111399A Expired - Lifetime JP2782914B2 (en) | 1990-04-26 | 1990-04-26 | Method of forming bump electrode connection |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2782914B2 (en) |
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|---|---|---|---|---|
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| US5585282A (en) * | 1991-06-04 | 1996-12-17 | Micron Technology, Inc. | Process for forming a raised portion on a projecting contact for electrical testing of a semiconductor |
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-
1990
- 1990-04-26 JP JP2111399A patent/JP2782914B2/en not_active Expired - Lifetime
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2782914B2 (en) | 1998-08-06 |
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