JPH0397136A - Optical recording medium - Google Patents
Optical recording mediumInfo
- Publication number
- JPH0397136A JPH0397136A JP1234265A JP23426589A JPH0397136A JP H0397136 A JPH0397136 A JP H0397136A JP 1234265 A JP1234265 A JP 1234265A JP 23426589 A JP23426589 A JP 23426589A JP H0397136 A JPH0397136 A JP H0397136A
- Authority
- JP
- Japan
- Prior art keywords
- base body
- reflective film
- coated
- error rate
- reflecting film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims description 15
- 150000004767 nitrides Chemical class 0.000 claims abstract description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 10
- 239000001301 oxygen Substances 0.000 claims abstract description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 7
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 7
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 7
- 239000010936 titanium Substances 0.000 claims abstract description 7
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 7
- 239000003963 antioxidant agent Substances 0.000 claims description 5
- 230000003078 antioxidant effect Effects 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 5
- -1 silicon nitride Chemical class 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 2
- 239000005083 Zinc sulfide Substances 0.000 abstract description 2
- 238000002310 reflectometry Methods 0.000 abstract description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 abstract description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract 3
- 238000007254 oxidation reaction Methods 0.000 abstract 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract 1
- 230000003064 anti-oxidating effect Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000005341 toughened glass Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は音響機器やコンピュータの周辺機器などに用い
られる光記憶体に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an optical storage medium used in audio equipment, computer peripheral equipment, and the like.
（従来の技術）
従来、光記憶体の一つであるコンパクトディスク（以下
、ＣＤと略す。）の反射膜として、アルミニウムが使用
されている。しかし、近年、ＣＤにコンピュータデータ
を記録したＣＤ−ＲＯＭが普及し、これらの再生専用光
ディスクに対して従来にも増して、高温・高湿下での保
存性の高いものが望まれている。(Prior Art) Aluminum has conventionally been used as a reflective film for compact discs (hereinafter abbreviated as CDs), which are one type of optical storage medium. However, in recent years, CD-ROMs, in which computer data is recorded on CDs, have become widespread, and there is a demand for these read-only optical discs to have higher storage stability under high temperature and high humidity conditions than ever before.
そこで、耐腐食性に優れたチタンあるいはジルコニウム
あるいはハフニウムの何れか一種類を少なくとも含む窒
化物を反射膜とする光記憶体が発明された。（特許願６
３−１９３８１９、６３−１９３８２０１６３−２１６
７７９）
（発明が解決しようとする課題）
酸素を含む下地上に、チタンあるいはジルコニウムある
いはハフニウムの何れか一種類を少なくとも含む窒化物
を反射膜として形戒すると、その下地体中の酸素または
下地体表面に吸着した水中酸素がその窒化物中に取り込
まれ、その窒化物の反射率は７０％未満に低下する。反
射膜の反射率がそのように低いと、信号読み取りの指標
とされるエラーレートが市販品のそれより遥かに大きが
ったり、再生できないという問題点があった。Therefore, an optical memory body was invented in which a reflective film is made of a nitride containing at least one of titanium, zirconium, or hafnium, which has excellent corrosion resistance. (Patent application 6
3-193819, 63-193820163-216
779) (Problem to be solved by the invention) When a nitride containing at least one of titanium, zirconium, or hafnium is used as a reflective film on a substrate containing oxygen, oxygen in the substrate or the substrate Oxygen in the water adsorbed on the surface is incorporated into the nitride, reducing its reflectivity to less than 70%. When the reflectance of the reflective film is so low, there are problems in that the error rate, which is used as an index for signal reading, is much higher than that of commercially available products, and that it cannot be reproduced.
本発明は以上述べたような従来の事情に対処してなされ
たもので、エラーレートが小さく、再生マージンが大き
い光記憶体を提供することを目的とする。The present invention has been made in response to the conventional circumstances as described above, and an object of the present invention is to provide an optical storage medium with a low error rate and a large reproduction margin.
（課題点を解決するための手段）
本発明は、酸素を含む下地体と、前記下地体上に被覆さ
れる酸化防止層、前記酸化防止層上に被覆されてチタン
あるいはジルコニウムあるいはハフニウムの何れか一種
類を少なくとも含む窒化物からなる反射膜と、前記反射
膜上に被覆される保護膜とを具備することを特徴とする
光記憶体である。(Means for Solving the Problems) The present invention provides a base body containing oxygen, an antioxidant layer coated on the base body, and a titanium, zirconium, or hafnium base body coated on the antioxidant layer. The optical storage body is characterized by comprising a reflective film made of a nitride containing at least one type of nitride, and a protective film coated on the reflective film.
本発明の光記憶体は、例えば次のように作製される。The optical memory of the present invention is produced, for example, as follows.
まず、この酸素を含む下地体としては、例えば強化ガラ
ス、強化ガラスに酸化珪素や酸化チタンなどを被覆した
もの、石英ガラス、ゾルゲル膜被覆ガラス、ポリオレフ
ィン樹脂、アクリル樹脂、ボリカーボネート樹脂などが
用いられる。First, as the substrate containing oxygen, for example, tempered glass, tempered glass coated with silicon oxide or titanium oxide, quartz glass, glass coated with a sol-gel film, polyolefin resin, acrylic resin, polycarbonate resin, etc. are used. .
次に、上記下地体の上に、酸化防止層としては、窒化珪
素などの窒化物、硫化亜鉛などの硫化物などが挙げられ
る。これらは記録再生を行う７８０ｎｍ程度の波長の光
に対して透明であり、記録再生時に支障をきたすことは
ない。この酸化防止層と上記下地体の何れか一方に案内
溝と情報を書き込んだピットが設けてある。Next, on the base body, examples of the anti-oxidation layer include nitrides such as silicon nitride, sulfides such as zinc sulfide, and the like. These are transparent to light having a wavelength of about 780 nm for recording and reproduction, and do not cause any trouble during recording and reproduction. Guide grooves and pits in which information is written are provided on either the anti-oxidation layer or the base body.
次に上記酸化防止層上に、反射膜として、チタンあるい
はジルコニウムあるいはハフニウムの何れか一種類を少
なくとも含む窒化物を高周波マグネトロンスバッタ法、
イオンプレーティング法、クラスターイオンビーム法、
プラズマＣＶＤ法等により５０〜５００ｎｍの膜厚で被
覆する。Next, a nitride containing at least one of titanium, zirconium, or hafnium is coated on the anti-oxidation layer as a reflective film using a high-frequency magnetron scattering method.
Ion plating method, cluster ion beam method,
It is coated with a film thickness of 50 to 500 nm by plasma CVD method or the like.
次に、上記反射膜上に被覆される保護膜は、従来と同じ
く樹脂を被覆する。Next, the protective film coated on the reflective film is coated with resin as in the conventional case.
（作用）
このように作製した本発明の光記憶体は、酸素を含む下
地体とチタンあるいはジルコニウムあるいはハフニウム
の何れか一種類を少なくとも含む窒化物からなる反射膜
との間に酸化防止層を設け、その反射膜中に酸素が取り
込まれることを防止し、反射率を７０％以上有している
。このために、酸化防止層を設けていない光記憶体より
はるかに小さいエラーレートを有することになる。(Function) The optical memory of the present invention produced in this manner has an anti-oxidation layer provided between the base material containing oxygen and the reflective film made of nitride containing at least one of titanium, zirconium, or hafnium. , which prevents oxygen from being taken into the reflective film and has a reflectance of 70% or more. For this reason, it has a much lower error rate than an optical memory without an anti-oxidation layer.
（実施例） 以下に、図面を参照して実施例を詳細に説明する。(Example) Examples will be described in detail below with reference to the drawings.
第１図は本発明の光記憶体の一実施例を示す部分゜断面
図である。図中、１は下地体、２は好ましくは膜厚１０
０〜５００Ａ程度の酸化防止層、３ Ｇ．ｔ ５０〜５
００ｎｍの膜厚の反射膜、４は保護膜である。FIG. 1 is a partial sectional view showing an embodiment of the optical storage body of the present invention. In the figure, 1 is the base body, 2 is preferably a film thickness of 10
Antioxidant layer of about 0 to 500A, 3G. t 50~5
The reflective film has a thickness of 00 nm and 4 is a protective film.
次に、これらの試料と酸化防止層を設けていない光記憶
体について、信号の良否の指標となるエラーレートを測
定した。この結果および反射率の測定結果を第２表に示
す。第２表に示すように、本発明の試料のエラーレート
は酸化防止層を設けていない光記憶体では比較にならな
いほど良好であった。Next, the error rate, which is an indicator of signal quality, was measured for these samples and for an optical storage medium without an anti-oxidation layer. The results and reflectance measurement results are shown in Table 2. As shown in Table 2, the error rate of the sample of the present invention was incomparably better than that of an optical memory without an anti-oxidation layer.
第
２
表
第工図は本発明の光記憶体の一実施例を示す部分断面図
である。The drawing in Table 2 is a partial sectional view showing an embodiment of the optical storage body of the present invention.
１・・・下地体、２・・・酸化防止層、３・・・反射膜
、４・・・保護膜。DESCRIPTION OF SYMBOLS 1... Base body, 2... Anti-oxidation layer, 3... Reflective film, 4... Protective film.
Claims (1)
止層、前記酸化防止層上に被覆されてチタンあるいはジ
ルコニウムあるいはハフニウムの何れか一種類を少なく
とも含む窒化物からなる反射膜と、前記反射膜上に被覆
される保護膜とを具備することを特徴とする光記憶体。a base body containing oxygen; an antioxidant layer coated on the base body; a reflective film made of a nitride coated on the antioxidant layer and containing at least one of titanium, zirconium, or hafnium; An optical memory comprising a protective film coated on a reflective film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1234265A JPH0397136A (en) | 1989-09-08 | 1989-09-08 | Optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1234265A JPH0397136A (en) | 1989-09-08 | 1989-09-08 | Optical recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0397136A true JPH0397136A (en) | 1991-04-23 |
Family
ID=16968262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1234265A Pending JPH0397136A (en) | 1989-09-08 | 1989-09-08 | Optical recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0397136A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200031615A (en) | 2017-07-26 | 2020-03-24 | 세키스이 메디칼 가부시키가이샤 | Mutation gene detection method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63247929A (en) * | 1987-04-01 | 1988-10-14 | Ayao Wada | Optical recording disk |
| JPS6446244A (en) * | 1987-08-12 | 1989-02-20 | Matsushita Electric Ind Co Ltd | Optical disk |
-
1989
- 1989-09-08 JP JP1234265A patent/JPH0397136A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63247929A (en) * | 1987-04-01 | 1988-10-14 | Ayao Wada | Optical recording disk |
| JPS6446244A (en) * | 1987-08-12 | 1989-02-20 | Matsushita Electric Ind Co Ltd | Optical disk |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200031615A (en) | 2017-07-26 | 2020-03-24 | 세키스이 메디칼 가부시키가이샤 | Mutation gene detection method |
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