[go: up one dir, main page]

JPH0338917A - Inverter circuit - Google Patents

Inverter circuit

Info

Publication number
JPH0338917A
JPH0338917A JP1174600A JP17460089A JPH0338917A JP H0338917 A JPH0338917 A JP H0338917A JP 1174600 A JP1174600 A JP 1174600A JP 17460089 A JP17460089 A JP 17460089A JP H0338917 A JPH0338917 A JP H0338917A
Authority
JP
Japan
Prior art keywords
back gate
channel
type
inverter circuit
type transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1174600A
Other languages
Japanese (ja)
Inventor
Hiroko Tanaka
裕子 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP1174600A priority Critical patent/JPH0338917A/en
Publication of JPH0338917A publication Critical patent/JPH0338917A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electronic Switches (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To suppress sudden turning on/off of a transistor(TR) while a switch is in a transient state and to reduce the generation of noise by inserting a back gate control TR between a back gate and a power terminal of a P-channel TR and an N-channel TR to shift the back gate voltage from a reference voltage. CONSTITUTION:The drain and the source of a 2nd P-channel TR QP2 and N- channel TR QN2 for back gate control are inserted respectively between a back gate terminal BGP and a power terminal TD of a 1st P-channel TR QP1 and between a back gate terminal BGN, and a power terminal TS of a 1st N-channel TR QN1 in an inverter circuit of a CMOS IC. Then a back gate power supply 1 connecting each gate to a common gate G is added. Then the 1st TRs QP1 and QN1 are not suddenly turned on at the transient time of rise and fall, the waveform of an output voltage VD is relaxed and no noise is generated.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はインバータ回路に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to an inverter circuit.

〔従来の技術〕[Conventional technology]

従来、CMO3型O3のインバータ回路は、共通ゲート
Gを有する一対のPタイプトランジスタとNタイプトラ
ンジスタがドレイン電圧■DDのドレイン電源端Toと
ソース電圧V9Sのソース電源端Tsとの間にシリーズ
に接続されていた。
Conventionally, in a CMO3 type O3 inverter circuit, a pair of P-type transistors and N-type transistors having a common gate G are connected in series between the drain power supply terminal To of the drain voltage ■DD and the source power supply terminal Ts of the source voltage V9S. It had been.

Pタイプ及びNタイプトランジスタのバックゲートは、
それぞれのドレイン及びソースに接続され、ドレイン電
圧VDD及びソース電圧VSSにバイアスされていた。
The back gates of P type and N type transistors are
It was connected to each drain and source and biased to drain voltage VDD and source voltage VSS.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来のインバータ回路は、CMO3型O3のP
タイプトランジスタとNタイプトランジスタのバックゲ
ートが直接それぞれのドレインとソースに接続されてい
ており、出力電圧の波形の立上り及び立下りが急峻であ
るので、高速の周波数で回路動作する場合に、ノイズ等
を発生して次段の論理回路の誤動作を誘発するという欠
点があった。
The conventional inverter circuit described above has a CMO3 type O3 P
The back gates of type transistors and N type transistors are directly connected to their respective drains and sources, and the rise and fall of the output voltage waveforms are steep, so when the circuit operates at a high frequency, noise etc. This has the drawback of causing a malfunction in the logic circuit at the next stage.

本発明の目的は、ノイズの発生の少いインバータ回路を
提供することにある。
An object of the present invention is to provide an inverter circuit that generates less noise.

〔課題を解決するための手段〕[Means to solve the problem]

本発明のインバータ回路は、共通ゲートが入力端に接続
する第1のPタイプトランジスタと第1のNタイプトラ
ンジスタが、ドレイン電源端とソース電源端との間にシ
リーズに接続されたCMO3型O3のインバータ回路に
おいて、前記第1のPタイプトラジスタのバックゲート
が第2のP(N)タイプトランジスタのソースに接続さ
れ、前記第1のNタイプトランジスタのバックゲートが
第2のN(P)タイプトランジスタのドレインにかつ前
記第2のP及びNタイプトランジスタの共通ゲートが前
記入力端に接続されて構成されている。
The inverter circuit of the present invention is a CMO3 type O3 in which a first P type transistor and a first N type transistor whose common gate is connected to an input terminal are connected in series between a drain power supply terminal and a source power supply terminal. In the inverter circuit, a back gate of the first P type transistor is connected to a source of a second P (N) type transistor, and a back gate of the first N type transistor is connected to a source of a second N (P) type transistor. A drain of the transistor and a common gate of the second P and N type transistors are connected to the input terminal.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の第1の実施例の回路図である。FIG. 1 is a circuit diagram of a first embodiment of the present invention.

インバータ回路は、従来のCMO3型O3のインバータ
回路の第1のPタイプトランジスタQp+及び第1のN
タイプトランジスタQP2のバックゲート・電源端の間
B G p −T o及びBGs −Ts間に、それぞ
れバックゲート制御用の第2のPタイプトランジスタQ
P2及びNタイプトランジスタQN2のドレイン・ソー
スを挿入し、それぞれのゲートを共通ゲートGに接続す
るバックゲート電源1を付加して構成されている。
The inverter circuit includes a first P type transistor Qp+ and a first N type transistor of a conventional CMO3 type O3 inverter circuit.
A second P-type transistor Q for back gate control is provided between the back gate and the power supply terminal of the type transistor QP2 between BG p -T o and between BGs and Ts, respectively.
It is constructed by inserting the drains and sources of P2 and N type transistors QN2, and adding a back gate power supply 1 that connects their gates to a common gate G.

第2図は第1図の回路の動作を説明するための出力電圧
の波形図である。
FIG. 2 is an output voltage waveform diagram for explaining the operation of the circuit shown in FIG. 1.

トランジスタQp+及びQNIのバックゲート電圧vn
P及びVBNは、第1のトランジスタのオン動作時点で
第2のトランジスタのダイオード電圧VF分だけそれぞ
れの電源電圧VDD、 VB2からシフトされる。
Back gate voltage vn of transistor Qp+ and QNI
P and VBN are shifted from their respective power supply voltages VDD and VB2 by the diode voltage VF of the second transistor when the first transistor turns on.

このため、立上り及び立下りの過度時に第1のトランジ
スタQPI及びQ旧は急峻にオン状態に移らず、破線A
に示すように出力電圧V。の波形は、実線Bに示す従来
の波形に比べて過度時点t1〜t4でゆるやかになりノ
イズを発生しない また、スイッチング能力としては変化はないので、遅延
時間等の影響はない。
Therefore, during rising and falling transients, the first transistors QPI and QO do not turn on abruptly, and the broken line A
The output voltage V as shown in . Compared to the conventional waveform shown by the solid line B, the waveform is gentler at the transient time points t1 to t4 and does not generate noise. Furthermore, since there is no change in switching ability, there is no effect of delay time or the like.

第3図は本発明の第2の実施例の回路図である。FIG. 3 is a circuit diagram of a second embodiment of the present invention.

本実施例のバックゲート電源1.は、第1図のバックゲ
ート電源1のバックゲート制御用の第2のトランジスタ
QP2.QN2の上下を入れ換えて、第1のトランジス
タに組み合せている。
Back gate power supply of this embodiment 1. are the second transistors QP2 . for back gate control of the back gate power supply 1 in FIG. The top and bottom of QN2 are swapped and combined with the first transistor.

この場合も、第1の実施例と同様の効果が得られる。In this case as well, the same effects as in the first embodiment can be obtained.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、CMO3型O3のインバ
ータ回路のPタイプトランジスタ及びNタイプトランジ
スタのそれぞれのバックゲートと電源端間にバックゲー
ト制御用トランジスタを挿入してバックゲート電圧をそ
れぞれ基準電位よりシフトさせることにより、スイッチ
過度時のトランジスタの急峻なオン・オフをおさえて出
力波形の立上り及び立下りをなだらかにすることができ
るので、ノイズ発生を減少させる効果がある。
As explained above, the present invention inserts a backgate control transistor between the backgates and power supply terminals of each of the P type transistor and N type transistor of a CMO3 type O3 inverter circuit to adjust the backgate voltage from the reference potential. By shifting, the abrupt on/off of the transistor during switching transients can be suppressed, and the rise and fall of the output waveform can be smoothed, which has the effect of reducing noise generation.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の第1の実施例の回路図、第2図は第1
図の回路の動作を説明するための出力電圧の波形図、第
3図は本発明の第2の実施例の回路図である。 1.1.・・・バックゲート電源、BGN  BGp・
・・バックゲート、G・・・共通ゲート、QNI、QN
2・・・第1.第2のNタイプトランジスタ、QPII
QP2・・・第1.第2のPタイプトランジスタ、VB
N、Vap・・・バックゲート電圧、Vo・・・ゲート
電圧、v(。 ・・・出力電圧6
FIG. 1 is a circuit diagram of a first embodiment of the present invention, and FIG. 2 is a circuit diagram of a first embodiment of the present invention.
FIG. 3 is an output voltage waveform diagram for explaining the operation of the circuit shown in the figure, and FIG. 3 is a circuit diagram of a second embodiment of the present invention. 1.1.・・・Back gate power supply, BGN BGp・
...Back gate, G...Common gate, QNI, QN
2... 1st. Second N-type transistor, QPII
QP2... 1st. Second P-type transistor, VB
N, Vap...back gate voltage, Vo...gate voltage, v(....output voltage 6

Claims (1)

【特許請求の範囲】[Claims] 共通ゲートが入力端に接続する第1のPタイプトランジ
スタと第1のNタイプトランジスタが、ドレイン電源端
とソース電源端との間にシリーズに接続されたCMOS
型ICのインバータ回路において、前記第1のPタイプ
トラジスタのバックゲートが第2のP(N)タイプトラ
ンジスタのソースに接続され、前記第1のNタイプトラ
ンジスタのバックゲートが第2のN(P)タイプトラン
ジスタのドレインにかつ前記第2のP及びNタイプトラ
ンジスタの共通ゲートが前記入力端に接続されているこ
とを特徴とするインバータ回路。
A CMOS in which a first P type transistor and a first N type transistor whose common gate is connected to an input terminal are connected in series between a drain power supply terminal and a source power supply terminal.
In the inverter circuit of type IC, the back gate of the first P type transistor is connected to the source of the second P(N) type transistor, and the back gate of the first N type transistor is connected to the second N( An inverter circuit characterized in that a drain of a P) type transistor and a common gate of the second P and N type transistors are connected to the input terminal.
JP1174600A 1989-07-05 1989-07-05 Inverter circuit Pending JPH0338917A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1174600A JPH0338917A (en) 1989-07-05 1989-07-05 Inverter circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1174600A JPH0338917A (en) 1989-07-05 1989-07-05 Inverter circuit

Publications (1)

Publication Number Publication Date
JPH0338917A true JPH0338917A (en) 1991-02-20

Family

ID=15981410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1174600A Pending JPH0338917A (en) 1989-07-05 1989-07-05 Inverter circuit

Country Status (1)

Country Link
JP (1) JPH0338917A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5552723A (en) * 1991-07-26 1996-09-03 Kabushiki Kaisha Toshiba CMOS output circuit compensating for back-gate bias effects
DE4404132C2 (en) * 1993-02-10 2003-03-06 Fairchild Semiconductor Corp N Switchable full deflection buffer circuit with isolation with multiple power supply
WO2008114379A1 (en) * 2007-03-19 2008-09-25 Fujitsu Limited Inverter circuit and balanced input inverter circuit
DE10200859B4 (en) * 2001-01-12 2008-11-13 Hewlett-Packard Development Co., L.P., Houston Complementary Metal Oxide Semiconductor Field Effect Transistor Inverter and Method for Manipulating Time Delay Therewith

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5552723A (en) * 1991-07-26 1996-09-03 Kabushiki Kaisha Toshiba CMOS output circuit compensating for back-gate bias effects
DE4404132C2 (en) * 1993-02-10 2003-03-06 Fairchild Semiconductor Corp N Switchable full deflection buffer circuit with isolation with multiple power supply
DE10200859B4 (en) * 2001-01-12 2008-11-13 Hewlett-Packard Development Co., L.P., Houston Complementary Metal Oxide Semiconductor Field Effect Transistor Inverter and Method for Manipulating Time Delay Therewith
WO2008114379A1 (en) * 2007-03-19 2008-09-25 Fujitsu Limited Inverter circuit and balanced input inverter circuit
JPWO2008114379A1 (en) * 2007-03-19 2010-07-01 富士通株式会社 Inverter circuit and balanced input inverter circuit
US7847616B2 (en) 2007-03-19 2010-12-07 Fujitsu Limited Inverter circuit and balanced input inverter circuit

Similar Documents

Publication Publication Date Title
JP2011166449A (en) Transmission gate and semiconductor device
KR900005455A (en) Output buffer circuit with level shift function
US6025756A (en) Oscillation circuit
KR100263785B1 (en) Cmos circuit
US20030189452A1 (en) Delay circuit and semiconductor device using the same
ATE363766T1 (en) SCHMITT TRIGGER CIRCUIT IN SOI TECHNOLOGY
GB2570805A (en) Interface circuit
JPH0338917A (en) Inverter circuit
JP3068752B2 (en) Semiconductor device
JP3540401B2 (en) Level shift circuit
JPH0212055B2 (en)
Goka et al. Comparative analysis of CMOS Schmitt triggers
JPH04117716A (en) Output circuit
JPH05284005A (en) Level shift circuit
JP2864949B2 (en) Level conversion circuit
TWM576366U (en) Level conversion circuit with auxiliary circuit
JPH04217116A (en) Output circuit
JPH04175010A (en) Output buffer circuit
JPH11143564A (en) Differential amplifier circuit and reference voltage generation circuit using the circuit
KR940005875Y1 (en) CMOS output buffer circuit
CN115765633A (en) Phase inverter for oscillator, oscillator and chip
JPH088706A (en) Semiconductor integrated circuit
KR200296045Y1 (en) A ring oscillator
JP2946817B2 (en) Level conversion integrated circuit
Jain et al. Comparative analysis of delay for sub-threshold CMOS logics