[go: up one dir, main page]

JPH0332040A - Lsi-bear-chip mounting method and electronic circuit using such method - Google Patents

Lsi-bear-chip mounting method and electronic circuit using such method

Info

Publication number
JPH0332040A
JPH0332040A JP16750889A JP16750889A JPH0332040A JP H0332040 A JPH0332040 A JP H0332040A JP 16750889 A JP16750889 A JP 16750889A JP 16750889 A JP16750889 A JP 16750889A JP H0332040 A JPH0332040 A JP H0332040A
Authority
JP
Japan
Prior art keywords
lsi
bare chip
film
film circuit
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16750889A
Other languages
Japanese (ja)
Inventor
Shoji Kiribayashi
桐林 菖司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP16750889A priority Critical patent/JPH0332040A/en
Publication of JPH0332040A publication Critical patent/JPH0332040A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Wire Bonding (AREA)

Abstract

PURPOSE:To improve efficiency in connecting work by connecting a bumpless bear chip to a film circuit board wherein an insulating material for an LSI connecting part is removed and an opening part is provided with a wedge bonder. CONSTITUTION:An aluminum laminated insulating film 10 is etched, and a circuit pattern is formed. The insulating material for an LSI connecting part is removed, and an opening part 11 is provided. Thus, a film circuit base is formed. Then, a wedge bonder bead 50 is inserted into the opening part 11. An aluminum lead pattern 20 and a chip pad 31 are sequentially connected. Thereafter, the entire LSI bear chip 30 is molded, and a molded part 40 is formed. Therefore, a bum step is omitted, and only one connecting part is enough. Since the aluminum lead pattern is directly connected to the pad for the LSI bear chip, wire is not required. Therefore, the connecting speed becomes quick, and the working efficiency can be improved.

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明はLSIベアチップ実装方法及びこれを利用した
電子回路に係り、特にパンプレスベアチップをフィルム
回路基材に接続する方法及びその方法を用いた電子回路
に関する。
[Detailed Description of the Invention] <Industrial Application Field> The present invention relates to an LSI bare chip mounting method and an electronic circuit using the same, and particularly to a method for connecting a pumpless bare chip to a film circuit substrate and a method using the method. Regarding electronic circuits.

〈従来の技術〉 近年、多用されているフレキシブル回路基材へのベアチ
ップの接続方法として、大体3種類の方法がある。すな
わち、■ワイヤーボンダ一方式、■TAB方式、■フリ
ップチップ方式等がそれである。
<Prior Art> There are roughly three types of methods for connecting bare chips to flexible circuit substrates that have been widely used in recent years. Namely, these include (1) one-way wire bonder method, (2) TAB method, and (2) flip-chip method.

ワイヤーボンダ一方式は、パターン配線を施した基板の
上に直接ベアチップをグイボンディングしたあと、ワイ
ヤボンディングを施して、ベアチップおよびボンディン
グワイヤ全体を樹脂で封止する方法である。また、TA
B方式とは、フィルム回路基材のインナーリードとバン
プ付LSIペアチツブのバンプを加熱接続等により接続
したあと、前記フィルム回路基材のアウタリードを回路
基板に接続する方法である。
The one-way wire bonder method is a method in which a bare chip is directly bonded onto a substrate with patterned wiring, then wire bonding is performed, and the entire bare chip and bonding wires are sealed with resin. Also, T.A.
Method B is a method in which the inner leads of the film circuit base material and the bumps of the bumped LSI pair chip are connected by heat connection or the like, and then the outer leads of the film circuit base material are connected to the circuit board.

〈発明が解決しようとする課題〉 ところで、上記のワイヤーボンダ一方式では、ワイヤー
として金およびアルミニウム等を必要とすることから、
接続ピッチの微細化に問題がある他、製造工程が複雑に
なるものである。すなわち、ワイヤーボンダ一方式では
、チップと端子間の接続の際において、その構造上接続
1箇所当たりワイヤーの接続は2箇所必要である。また
、従来のワイヤーを使用するウェッジボンダ一方式は回
路基板を回転移動させる必要があるので作業の速度が遅
くなるという問題点があり、しかも大型回路基板、ロー
ル式のフィルム回路では設備上できない問題があった。
<Problems to be Solved by the Invention> By the way, since the above-mentioned one-type wire bonder requires gold, aluminum, etc. as the wire,
In addition to problems with miniaturization of the connection pitch, the manufacturing process becomes complicated. That is, in the case of a one-type wire bonder, when connecting a chip and a terminal, two wire connections are required for each connection point due to its structure. In addition, the conventional one-type wedge bonder that uses wire has the problem of slowing down the work speed because it requires rotating the circuit board, and this is a problem that cannot be achieved with large circuit boards or roll-type film circuits due to equipment limitations. was there.

また■TAB方式では、バンプ工程が必要であることお
よびインナーリードが変形しやすいという問題が残って
いた。さらに、■フリップチップ方式では、やはりバン
ブ工程が必要である。
Furthermore, the TAB method still has the problems of requiring a bumping process and easily deforming the inner leads. Furthermore, (1) the flip-chip method still requires a bump process.

本発明は上記事情に鑑みて創案されたもので、新規な方
法をとることにより、前記した問題点を排除できるLS
Iベアチップ実装方法及びその方法を利用した電子回路
を提供することを目的としている。
The present invention was created in view of the above circumstances, and by adopting a new method, it is possible to eliminate the above-mentioned problems.
The purpose of this invention is to provide a bare chip mounting method and an electronic circuit using the method.

く課題を解決するための手段〉 本発明のLSIベアチップ実装方法は、アルミニウム箔
をラミネートした絶縁フィルムをエツチングにより回路
パターンを作成するとともにLSI接続部の絶縁材を取
り除くことによりフィルム回路基材を作成し、前記フィ
ルム回路基材にウェッジボンダによりパンプレスベアチ
ップを接続するようにしたことを特徴としている。
Means for Solving the Problems> The LSI bare chip mounting method of the present invention involves creating a circuit pattern by etching an insulating film laminated with aluminum foil, and creating a film circuit base material by removing the insulating material at the LSI connection part. The present invention is characterized in that a pump press bare chip is connected to the film circuit substrate using a wedge bonder.

また本発明の電子回路は、アルミニウム箔をラミネート
した絶縁フィルムをエツチングにより回路パターンを作
成するとともにLSI接続部の絶縁材を取り除くことに
より開口部を形成したフィルム回路基材と、フィルム回
路基材に接続したパンプレスベアチップと、パンプレス
ベアチップ上を覆うモールド部とを具備した電子回路で
あって、前記開口部においてLSIベアチップの端子パ
ッドをフィルム回路基材のアルもリードに接続したこと
を特徴としている。
Furthermore, the electronic circuit of the present invention includes a film circuit base material in which a circuit pattern is created by etching an insulating film laminated with aluminum foil, and an opening is formed by removing the insulating material at the LSI connection part; An electronic circuit comprising a connected breadpress bare chip and a mold part covering the breadpress bare chip, characterized in that the terminal pads of the LSI bare chip are connected to the aluminum leads of the film circuit substrate at the openings. There is.

〈実施例〉 以下、図面を参照して本発明に係る一実施例を説明する
。第1図は本発明方法によるLSIベアチップを実装し
た場合の断面図、第2図はフィルム回路基材の平面図で
ある。
<Example> Hereinafter, an example according to the present invention will be described with reference to the drawings. FIG. 1 is a sectional view of an LSI bare chip mounted by the method of the present invention, and FIG. 2 is a plan view of a film circuit substrate.

10は絶縁フィルム、11は絶縁フィルム10の開口部
、20は絶縁フイルム回路上を被覆するアルξり一ドパ
ターン、30はLSI ベアチップ、31はLSI ベ
アチップ30のパッド部である。なお40は前記LSI
ベアチップ30上を覆うモールド部である。50はウェ
ッジボンダのヘッドを示している。
10 is an insulating film, 11 is an opening of the insulating film 10, 20 is an aluminum diagonal pattern covering the insulating film circuit, 30 is an LSI bare chip, and 31 is a pad portion of the LSI bare chip 30. Note that 40 is the LSI
This is a mold part that covers the bare chip 30. 50 indicates a head of a wedge bonder.

以下、本考案に係るLSIベアチップ実装方法について
詳細に説明する。
Hereinafter, the LSI bare chip mounting method according to the present invention will be explained in detail.

■絶縁フイルム回路上にアルミニウムを被覆し、絶縁材
ラミネートフィルムを作成する。
■Coat aluminum on the insulating film circuit to create an insulating laminate film.

■前記ラミネートフィルムをフォ゛トシステム等により
アルミリードパターンを形成する。
(2) Form an aluminum lead pattern on the laminate film using a photo system or the like.

■絶縁フィルム10のLSI端子周辺の除去する部分以
外の領域をレジストによりマスキングし、エツチング法
でもって除去することにより、開口部11を形成する(
ただしエツチング法以外にレーザー照射及び熱風により
絶縁材の開口部を設けてもよい)。
■The area around the LSI terminal of the insulating film 10 other than the part to be removed is masked with a resist and removed by an etching method to form the opening 11 (
However, in addition to the etching method, openings in the insulating material may be created using laser irradiation and hot air).

この場合、絶縁フィルム10の開口部11は第2図に図
示するように、LSIの中央部は残し、アウタリード先
端を接続したパターンにしてお(ことによりアルミニウ
ムのインナーリードは変形しにくいという効果がある。
In this case, as shown in FIG. 2, the opening 11 of the insulating film 10 is formed in a pattern that leaves the center of the LSI and connects the tips of the outer leads (thereby, the aluminum inner leads are less likely to deform). be.

以上の工程によりフィルム回路基材が作成される。A film circuit base material is created through the above steps.

■前記フィルム回路基材を予め位置決めし、LSIベア
チップのパッド31をアルミリードパターン20に位置
決めする。またウェッジボンダのヘッド50をスタート
位置に設定する。
(2) Position the film circuit substrate in advance, and position the pads 31 of the LSI bare chip on the aluminum lead pattern 20. Further, the head 50 of the wedge bonder is set at the starting position.

■前記工程の後、ウェッジボンダヘッド50を開口部1
1に挿入し、アルミリードパターン20とチップのパッ
ド31を順次接続してゆく。
■After the above process, insert the wedge bonder head 50 into the opening 1.
1, and successively connect the aluminum lead pattern 20 and the pad 31 of the chip.

■以上の工程を経た後、LSIベアチップ全体を樹脂で
もってモールドし、モールド部40を形成する。
(2) After the above steps, the entire LSI bare chip is molded with resin to form a molded portion 40.

〈発明の効果〉 本発明のLSIベアチップ実装方法は、アルミニウム箔
をラミネートした絶縁フィルムをエツチングにより回路
パターンを作成するとともにLSI接続部の絶縁材を取
り除くことによりフィルム回路基材を作成し、前記フィ
ルム回路基材にウェッジボンダによりパンプレスベアチ
ップを接続するようにしたものであるので、従来方式に
おいて必要であったバンブ工程が必要でなくなる。また
、本願発明の方式であれば、接続箇所が1箇所ですみし
かもアルミリードパターンを直接LSIベアチップのパ
ッドに接続するので、ワイヤーが不要になるため、従来
のワイヤー使用のウェッジボンダー及びワイヤーボンダ
一方式に比較して接続の速度が1/2以下になり、それ
だけ作業の効率が向上する。
<Effects of the Invention> In the LSI bare chip mounting method of the present invention, a circuit pattern is created by etching an insulating film laminated with aluminum foil, a film circuit base material is created by removing the insulating material at the LSI connection part, and the film is Since the pump press bare chip is connected to the circuit substrate using a wedge bonder, the bumping process required in the conventional method is no longer necessary. In addition, with the method of the present invention, there is only one connection point and the aluminum lead pattern is directly connected to the pad of the LSI bare chip, eliminating the need for wires. The connection speed is less than half that of the previous method, and work efficiency is improved accordingly.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明方法によるLSVベアチップを実装した
場合の断面図、第2図はフィルム回路基材の平面図であ
る。 10・・ ・絶縁フィルム 20・・・アルごリードパターン 30・・・LSIベアチップ 40・・・モールド部 50・・・ウェッジボンダヘッド
FIG. 1 is a sectional view of an LSV bare chip mounted by the method of the present invention, and FIG. 2 is a plan view of the film circuit substrate. 10... Insulating film 20... Al lead pattern 30... LSI bare chip 40... Mold part 50... Wedge bonder head

Claims (2)

【特許請求の範囲】[Claims] (1)アルミニウム箔をラミネートした絶縁フィルムを
エッチングにより回路パターンを作成するとともにLS
I接続部の絶縁材を取り除くことによりフィルム回路基
材を作成し、前記フィルム回路基材にウェッジボンダに
よりパンプレスベアチップを接続するようにしたことを
特徴とするLSIベアチップ実装方法。
(1) Create a circuit pattern by etching an insulating film laminated with aluminum foil and LS
A method for mounting an LSI bare chip, characterized in that a film circuit base material is created by removing an insulating material at an I connection part, and a pump press bare chip is connected to the film circuit base material using a wedge bonder.
(2)アルミニウム箔をラミネートした絶縁フィルムを
エッチングにより回路パターンを作成するとともにLS
I接続部の絶縁材を取り除くことにより開口部を形成し
たフィルム回路基材と、フィルム回路基材に接続したパ
ンプレスベアチップと、パンプレスベアチップ上を覆う
モールド部とを具備した電子回路であって、前記開口部
においてLSIベアチップの端子パッドをフィルム回路
基材のアルミリードに接続したことを特徴とする電子回
路。
(2) Create a circuit pattern by etching an insulating film laminated with aluminum foil and LS
An electronic circuit comprising a film circuit base material in which an opening is formed by removing an insulating material at an I connection part, a pump press bare chip connected to the film circuit base material, and a mold section covering the pump press bare chip. . An electronic circuit characterized in that terminal pads of an LSI bare chip are connected to aluminum leads of a film circuit substrate in the opening.
JP16750889A 1989-06-29 1989-06-29 Lsi-bear-chip mounting method and electronic circuit using such method Pending JPH0332040A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16750889A JPH0332040A (en) 1989-06-29 1989-06-29 Lsi-bear-chip mounting method and electronic circuit using such method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16750889A JPH0332040A (en) 1989-06-29 1989-06-29 Lsi-bear-chip mounting method and electronic circuit using such method

Publications (1)

Publication Number Publication Date
JPH0332040A true JPH0332040A (en) 1991-02-12

Family

ID=15850982

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16750889A Pending JPH0332040A (en) 1989-06-29 1989-06-29 Lsi-bear-chip mounting method and electronic circuit using such method

Country Status (1)

Country Link
JP (1) JPH0332040A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5316204A (en) * 1991-11-08 1994-05-31 Matsushita Electric Industrial Co., Ltd. Method for bonding lead with electrode of electronic device
US5602419A (en) * 1993-12-16 1997-02-11 Nec Corporation Chip carrier semiconductor device assembly
JP2011258818A (en) * 2010-06-10 2011-12-22 Ibiden Co Ltd Printed wiring board, electronic device, and manufacturing method of printed wiring board

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5316204A (en) * 1991-11-08 1994-05-31 Matsushita Electric Industrial Co., Ltd. Method for bonding lead with electrode of electronic device
US5602419A (en) * 1993-12-16 1997-02-11 Nec Corporation Chip carrier semiconductor device assembly
US5834338A (en) * 1993-12-16 1998-11-10 Nec Corporation Chip carrier semiconductor device assembly and a method for forming the same
JP2011258818A (en) * 2010-06-10 2011-12-22 Ibiden Co Ltd Printed wiring board, electronic device, and manufacturing method of printed wiring board

Similar Documents

Publication Publication Date Title
US8604348B2 (en) Method of making a connection component with posts and pads
JP4862848B2 (en) Manufacturing method of semiconductor package
JPH08186151A (en) Semiconductor device and manufacture thereof
WO2006004672A1 (en) Components with posts and pads
JP4029910B2 (en) Manufacturing method of semiconductor package and semiconductor package
JPH0394460A (en) Semiconductor device and manufacture thereof
JPH0332040A (en) Lsi-bear-chip mounting method and electronic circuit using such method
JP3421478B2 (en) Semiconductor device and manufacturing method thereof
JP2936540B2 (en) Circuit board, method of manufacturing the same, and method of manufacturing semiconductor package using the same
JPH1074887A (en) Electronic part and its manufacture
JP2002324873A (en) Semiconductor device and its manufacturing method
JP2840166B2 (en) Semiconductor device
JPH0974149A (en) Small package and manufacture
JPH09181491A (en) Method and structure for mounting semiconductor device
JP3606275B2 (en) Semiconductor package and manufacturing method thereof
JPH10154766A (en) Manufacture of semiconductor package and semiconductor package
JP2002110858A (en) Semiconductor package and its manufacturing method
JP2780375B2 (en) Method of connecting TAB tape to semiconductor chip and bump sheet used therefor
JP3374296B2 (en) Manufacturing method of multilayer lead frame
JP2004282098A (en) Manufacturing method for semiconductor package
JP3449097B2 (en) Semiconductor device
JP3563846B2 (en) Method of manufacturing lead frame member for BGA type resin-sealed semiconductor device
JPH04179135A (en) Manufacture of semiconductor device and tape carrier to be used for that
JP2882378B2 (en) Semiconductor package and lead frame
JP2005328057A (en) Manufacturing method of semiconductor package, and the semiconductor package