JPH03163173A - Conductive paste for aluminum nitride substrates - Google Patents
Conductive paste for aluminum nitride substratesInfo
- Publication number
- JPH03163173A JPH03163173A JP30394289A JP30394289A JPH03163173A JP H03163173 A JPH03163173 A JP H03163173A JP 30394289 A JP30394289 A JP 30394289A JP 30394289 A JP30394289 A JP 30394289A JP H03163173 A JPH03163173 A JP H03163173A
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- powder
- aluminum nitride
- paste
- ain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims description 10
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 8
- 239000004020 conductor Substances 0.000 claims description 32
- 239000000843 powder Substances 0.000 claims description 18
- 239000011230 binding agent Substances 0.000 claims description 5
- 238000004898 kneading Methods 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002362 mulch Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Paints Or Removers (AREA)
- Conductive Materials (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔概要〕
窒化アルミニウム基板用導体ペーストに関し、導体抵抗
値の低い導体ペーストを実用化することを目的とし、
窒化アルミニウム・グリンシート上にスクリーン印刷を
行った後に焼成して導体パターンを形成するのに使用す
る導体ペーストが、タングステン粉末に対して窒化アル
ミニウム粉末を0.2〜0.7重量%添加し、該粉末に
バインダと溶剤を添加して混練してなることを特徴とし
て窒化アルミニウム基板用導体ペーストを構戊する。[Detailed Description of the Invention] [Summary] Regarding the conductor paste for aluminum nitride substrates, the purpose is to put into practical use a conductor paste with a low conductor resistance value. The conductor paste used to form the conductor pattern is made by adding 0.2 to 0.7% by weight of aluminum nitride powder to tungsten powder, adding a binder and a solvent to the powder, and kneading the mixture. Characteristically, the conductive paste for aluminum nitride substrates is constructed.
本発明は導体抵抗の小さな窒化アルミニウム基板用導体
ペーストに関する。The present invention relates to a conductor paste for aluminum nitride substrates having low conductor resistance.
大量の情報を高速に処理する必要から情報処理装置は小
形大容量化が行われており、この装置の主体を占める半
導体集積回路は集積度か向上してLSIやVLS [が
実用化されている。Due to the need to process large amounts of information at high speed, information processing devices are becoming smaller and larger in capacity, and the semiconductor integrated circuits that make up the main component of these devices have improved in integration, and LSI and VLS have been put into practical use. .
そして、これらの集積回路はチップのま\て複数個をセ
ラミックスからなるチップ搭載用基板(インターボーザ
)に搭載してLSIモジュールを作り、これを取替え単
位として印刷配線基板などに装着する実装形体がとられ
つ匁ある。These integrated circuits are then mounted on a ceramic chip mounting board (interposer) to create an LSI module, which is then mounted on a printed circuit board or the like as a replacement unit. There is a lot of momme.
このように半導体集積回路の集積度か増し、また高密度
実装が行われるに従って装置の発熱量も加速度的に増加
している。As described above, as the degree of integration of semiconductor integrated circuits increases and high-density packaging is performed, the amount of heat generated by devices is increasing at an accelerating pace.
すなわち、当初はIC−チップ当たりの発熱量(約3.
5W程度と少なかったか、現在LSI−チッ二当たりの
発熱量は約10W程度に増加しており、これがマトリッ
クス状に多数個装着されてぃる場4は発熱量は膨大てあ
り、これは更に増加する傾Kにある。That is, initially, the amount of heat generated per IC chip (approximately 3.
The amount of heat generated per LSI chip has increased to about 10W, which used to be as low as about 5W, and when a large number of LSI chips are installed in a matrix, the amount of heat generated is enormous, and this is expected to increase further. There is a tendency K to do so.
従来、LSIチップなどを搭載するチップ搭載月基板は
熱伝導度が高く、耐熱性が優れたアルミ−t(Al20
3)が使用されてきた。Conventionally, chip mounting boards for mounting LSI chips, etc., have been made of aluminum-t (Al20), which has high thermal conductivity and excellent heat resistance.
3) has been used.
然し、アルミナの熱伝導度は優れているもの\20W/
ml<程度であり、上記のチップ搭載用基板片材料とし
ては不充分である。However, alumina has excellent thermal conductivity\20W/
ml<, which is insufficient as the material for the above-mentioned chip mounting substrate piece.
そこで、熱伝導度が320 W/mK (理論値)とス
きく、また熱膨張係数がシリコン(Si)に近いAI!
Nが着目され、この基板の実用化が進められている。Therefore, AI has a thermal conductivity of 320 W/mK (theoretical value) and a coefficient of thermal expansion close to that of silicon (Si)!
N has attracted attention, and efforts are being made to put this substrate into practical use.
また、AINは熱伝導度が優れている以外に熱膨張係数
ハ4.4 XIO−’/ ’CとLSIを構成すルSi
(7)熱膨張係数(3. 6x 10−@/ ’C)に
近いと云う利点がある。In addition to its excellent thermal conductivity, AIN also has a thermal expansion coefficient of 4.4
(7) It has the advantage of being close to the coefficient of thermal expansion (3.6x 10-@/'C).
セラミック多層回路基板の製造法としては、セラミック
ス粉末を焼結助剤,バインダ,可塑剤および分散剤と混
練してスラリーを作り、このスラリーをドクターブレー
ド法を用いてグリンシ一トを作り、このグリンシ一トに
穴開けしてパイアホール(Via−ho le)を作り
、この上に導体ペーストをスクリーン印刷してパイアホ
ールを埋めると共に導体線路を形成する。The method for manufacturing ceramic multilayer circuit boards is to make a slurry by kneading ceramic powder with a sintering aid, binder, plasticizer, and dispersant, and then use the doctor blade method to make a grit sheet. A via-hole is made by drilling a hole, and a conductive paste is screen printed on the via-hole to fill the via-hole and form a conductor line.
そして、カハるグリンシートを正確に位置合わせしなか
ら積層し、加圧して一体化した後、高温て焼成すること
により多層セラミック回路基板が作られている。Then, a multilayer ceramic circuit board is produced by laminating the Kaharu Green sheets while accurately positioning them, pressurizing them to integrate them, and then firing them at a high temperature.
こ覧て、AiNは融点が22QO’Cと高いために焼成
温度としてl600℃以上の高温が必要なことがら、導
体線路の構成材としてはタングステン(W)やモリブデ
ン(Mo)などの高融点金属CRefractory−
metal)が用いられている。Since AiN has a high melting point of 22QO'C and requires a high firing temperature of 1600℃ or higher, high-melting point metals such as tungsten (W) and molybdenum (Mo) are recommended as constituent materials for conductor lines. CRefactory-
metal) is used.
そして、W粉末を主構成材とするW導体ペーストは既に
市販されている。A W conductor paste whose main constituent is W powder is already commercially available.
然し、このW導体ペーストはアルミナ基板を使用対象と
するもので,あって、これをそのま\Aj7N基板に適
用しても密着性が悪く、信頼性の優れた導体パターンが
形成できないと云う問題がある,さて、AAN用W導体
ペーストとして、Wペーストに1重量%のAn粉末を添
加することにより導体抵抗が極小になることが報告され
ている。However, this W conductor paste is intended for use with alumina substrates, and there is a problem in that even if it is applied directly to an Aj7N substrate, the adhesion is poor and a highly reliable conductor pattern cannot be formed. It has been reported that the conductor resistance of a W conductor paste for AAN can be minimized by adding 1% by weight of An powder to the W paste.
(浜口他.昭和61年窯業協会年会予稿集p305,1
986)
然し、発明者等の実験によると、AINの1重量%の添
加によって導体抵抗は増加している。(Hamaguchi et al. Proceedings of the 1986 Ceramics Association Annual Meeting p305, 1
(986) However, according to experiments conducted by the inventors, the addition of 1% by weight of AIN increases the conductor resistance.
この理由はA47Nの抵抗率は>lQl3Ω・amと高
く絶縁物であり、またAINの比重は3.26であるの
に対し、Wの比重は19.3であり、約6倍と大きなこ
とによると思われる。The reason for this is that A47N has a high resistivity of >lQl3Ω・am and is an insulator, and the specific gravity of AIN is 3.26, whereas the specific gravity of W is 19.3, which is about 6 times larger. I think that the.
Wの抵抗率は4.9μΩ・cm(0℃)とCuの1,5
5μΩ・cm(0゜C)に較べると3倍以上大きく、そ
のためW導体ペーストをスクリーン印刷して得た導体線
路は抵抗が大きく、電力損失か無視てきないと云う問題
がある。The resistivity of W is 4.9μΩ・cm (0℃) and that of Cu is 1.5
It is more than three times larger than 5 μΩ·cm (0° C.), and therefore, the conductor line obtained by screen printing the W conductor paste has a large resistance, and there is a problem that power loss cannot be ignored.
そこで、導体線路の低抵抗化がAIN多層回路基板の実
用化に際しての課題である。Therefore, reducing the resistance of conductor lines is an issue when putting AIN multilayer circuit boards into practical use.
上記の課題はAI!Nグリンシート上にスクリーン印刷
を行った後に焼成して導体パターンを形成するのに使用
する導体ペーストが、W粉末に対してAfNを0.2〜
Q,7重ji96添加し、この粉末にバインダと溶剤を
添加して混練してなることを特徴としてAIN基板用導
体ペーストを構成することにより解決することができる
。The above challenges are AI! The conductor paste used to form a conductor pattern by screen printing on an N green sheet and baking it to form a conductor pattern contains 0.2 to 0.2 to 0.2 to 0.2 AfN to W powder.
This problem can be solved by constructing a conductor paste for AIN substrates, which is characterized by adding Q, 7-layer ji96, adding a binder and a solvent to this powder, and kneading the powder.
〔作用〕
発明者等はW導体ペーストに対するAI!Nの添加効果
を研究した結果、WペーストにAINの粉末を添加して
焼或し、焼結させると、無添加の場合に較べ、W導体の
緻密化か進むことを見出した。[Function] The inventors developed AI for W conductor paste! As a result of researching the effect of adding N, it was found that when AIN powder is added to W paste and sintered, the W conductor becomes more dense than when no additive is added.
然し、Aj7N粉末を添加すると絶縁物であるために抵
抗率が増加すると云う関係がある。However, when Aj7N powder is added, the resistivity increases because it is an insulator.
そこで、発明者等はAINの添加量に対するW導体の相
対密度と体積抵抗の関係を調査した結果、0.2重量%
以上の添加で緻密化し、0.8重量96の添加までは無
添加のものに較べ、抵抗率か少なくなることが判った。Therefore, the inventors investigated the relationship between the relative density and volume resistivity of the W conductor with respect to the amount of AIN added, and found that 0.2% by weight
It was found that the above addition resulted in densification, and that the resistivity was lower than that without additives up to the addition of 0.8 weight 96.
W粉末にAIN粉末を0〜5重量%の範囲に加え、この
100重量部に対して有機バインダとしてエチルセルロ
ースを3重ffi 96 ,溶剤としてプチルカルビト
ールを15重量%とメチルエチルケトンを100重量%
加え、ボールミル,襠解機および三本口−ルミルを用い
て混練し、l7種類のWペーストを作った。Add AIN powder to the W powder in a range of 0 to 5% by weight, and to 100 parts by weight, triple ffi 96 ethyl cellulose as an organic binder, 15% by weight of butyl carbitol and 100% by weight of methyl ethyl ketone as a solvent.
In addition, 17 types of W pastes were prepared by kneading using a ball mill, a mulch mill, and a three-mouth remill.
このペーストを厚さが約500μmのAINグリンシー
トに印刷し、N2気流中で600゜Cに加熱して脱脂し
、この各試料をN2気流中てl700゜Cて9時間焼成
してAlN配線基板を形成し、この各の配線基板につい
て面積抵抗を測定した。This paste was printed on an AIN green sheet with a thickness of approximately 500 μm, heated to 600°C in a N2 stream to degrease it, and each sample was baked at 1700°C in a N2 stream for 9 hours to form an AlN wiring board. was formed, and the sheet resistance of each wiring board was measured.
第1表はWに対するAlNの添加量と面積抵抗の関係を
示しており、AfNの増加と共に面積抵抗は次第に減少
して0.5重量%の添加により砥小値を示し、次に上昇
に転じることを示しており、第1図はこの関係を図示し
たものである。Table 1 shows the relationship between the amount of AlN added to W and the sheet resistance. As the amount of AfN increases, the sheet resistance gradually decreases, reaches a low value with the addition of 0.5% by weight, and then starts to rise. FIG. 1 illustrates this relationship.
こ\て、面積抵抗か13 mΩ/口以下とAI!N粉末
を添加しない場合に較べ、遥かに低い値を示す範囲は0
.2〜0.7重量96の範囲であり、この範囲のAIN
粉の添加が有効なことか判る。Here, the sheet resistance is less than 13 mΩ/mouth and AI! The range where the value is much lower than when no N powder is added is 0.
.. 2 to 0.7 weight 96, and this range of AIN
I can see if adding powder is effective.
W粉末に対してA47N粉末を0.2〜0.7重量?6
添加した導体ペーストを使用する本発明の実施により、
従来に較べて低抵抗な導体線路を備えたAfN多層セラ
ミック回路基板を製造することかできる。0.2 to 0.7 weight of A47N powder to W powder? 6
By implementing the invention using a doped conductor paste,
It is possible to manufacture an AfN multilayer ceramic circuit board having conductor lines with lower resistance than conventional ones.
第1表 4.Table 1 4.
第1図はW導体ペーストに対する
An
の添加
効果を示す図である。
W導休ペースト1こ対ナろAINのか功0効景宮示す図
第 1 目FIG. 1 is a diagram showing the effect of adding An to W conductor paste. Figure 1 showing the effect of 0 effect of W Dokyu Paste vs. Naro AIN
Claims (1)
行った後に焼成して導体パターンを形成するのに使用す
る導体ペーストが、タングステン粉末に対して窒化アル
ミニウム粉末を0.2〜0.7重量%添加し、該粉末に
バインダと溶剤を添加して混練してなることを特徴とす
る窒化アルミニウム基板用導体ペースト。The conductor paste used to form a conductor pattern by screen printing on an aluminum nitride green sheet and baking it to form a conductor pattern has aluminum nitride powder added in an amount of 0.2 to 0.7% by weight based on tungsten powder. A conductor paste for an aluminum nitride substrate, characterized in that it is made by adding a binder and a solvent to the powder and kneading the mixture.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1303942A JP2754806B2 (en) | 1989-11-22 | 1989-11-22 | Conductor paste for aluminum nitride substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1303942A JP2754806B2 (en) | 1989-11-22 | 1989-11-22 | Conductor paste for aluminum nitride substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH03163173A true JPH03163173A (en) | 1991-07-15 |
JP2754806B2 JP2754806B2 (en) | 1998-05-20 |
Family
ID=17927147
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1303942A Expired - Lifetime JP2754806B2 (en) | 1989-11-22 | 1989-11-22 | Conductor paste for aluminum nitride substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2754806B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1509071A1 (en) * | 2002-05-28 | 2005-02-23 | Sumitomo Electric Industries, Ltd. | Aluminum nitride sintered compact having metallized layer and method for preparation thereof |
-
1989
- 1989-11-22 JP JP1303942A patent/JP2754806B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1509071A1 (en) * | 2002-05-28 | 2005-02-23 | Sumitomo Electric Industries, Ltd. | Aluminum nitride sintered compact having metallized layer and method for preparation thereof |
EP1509071A4 (en) * | 2002-05-28 | 2008-12-31 | Sumitomo Electric Industries | SINTERED PASTILLE BASED ON ALUMINUM NITRIDE COMPRISING A METALLIZED LAYER AND PROCESS FOR PREPARING THE SAME |
Also Published As
Publication number | Publication date |
---|---|
JP2754806B2 (en) | 1998-05-20 |
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