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JPH03115583A - Light absorber and production thereof - Google Patents

Light absorber and production thereof

Info

Publication number
JPH03115583A
JPH03115583A JP24914089A JP24914089A JPH03115583A JP H03115583 A JPH03115583 A JP H03115583A JP 24914089 A JP24914089 A JP 24914089A JP 24914089 A JP24914089 A JP 24914089A JP H03115583 A JPH03115583 A JP H03115583A
Authority
JP
Japan
Prior art keywords
plating layer
light absorber
layer
nickel
base material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24914089A
Other languages
Japanese (ja)
Inventor
Masao Horiuchi
堀内 政夫
Shunichi Kodama
俊一 児玉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Anritsu Corp
Original Assignee
Anritsu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anritsu Corp filed Critical Anritsu Corp
Priority to JP24914089A priority Critical patent/JPH03115583A/en
Publication of JPH03115583A publication Critical patent/JPH03115583A/en
Pending legal-status Critical Current

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  • Radiation Pyrometers (AREA)
  • Chemically Coating (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

PURPOSE:To obtain a light absorber transducing light energy into heat energy by forming an Ni plating layer as a stress relieving layer on the surface of a thin base material of Cu, etc., further forming an Ni-P alloy plating layer by electroless plating and blackening the alloy plating layer by oxidation. CONSTITUTION:When a light absorber used to transduce light energy into heat energy is produced, one side of Cu foil is electroplated with Ni to form an Ni plating layer as a stress relieving layer and an Ni-P alloy plating layer is formed on the Ni layer by electroless plating. The plated foil is washed and treated with a soln. contg. NaNO3 and H2SO4 to blacken the Ni-P alloy plating layer. The Cu foil 2 with the resulting black coating film 3 as the light absorber 1 is fixed on a substrate 4 with an adhesive 5 and a thermocouple 6 is fitted to the rear side of the substrate 4. light energy is transduced into heat energy by the light absorber 1 and output as an electric signal through the thermocouple 6.

Description

【発明の詳細な説明】 【産業上の利用分野】 本発明は光センサ等に用いられる光吸収体に関し、特に
、板厚の薄い基材表面に黒色被膜処理を施した無電解ニ
ッケル・リンめっき層を有し、該黒色被膜に入射した光
エネルギーを熱エネルギーに変換する光吸収体及びその
製造方法に関するものである。 〔従来の技術] 光吸収体を光パワーの測定に用いるには、第4図に示す
ように、基材2の表面に光を吸収するため全黒被膜3を
形成した光吸収体lを、基板4に接着剤5により固着し
、基板4の裏側に熱電対素子6を設け、光吸収体により
光エネルギーを熱エネルギーに変換し、この熱エネルギ
ーを熱雷対素子により電気信号に変換して出力させてい
る。 この基材表面に形成される全黒被膜は、機械的振動や摩
擦によって剥落し易く、また、高温条件かで水分を吸収
して反射率が増加するという問題があり、実用上難点が
多い。 これに対し1発明者らが開発した黒色被膜(特願昭63
−231761号及び特願昭63−231760号明細
書に記載)は、ニッケル・リン合金の無電解めっき被膜
を形成し、これを酸化処理して得られ、その全反射率は
0.2%と極めて低く、かつ、その光吸収特性に波長依
存性が小さいという優れた性能を有し、しかも、強度も
十分あるので、機械的振動や摩擦によって剥落しにくく
、周囲温度条件に左右されず、水分を吸収しにくいなど
の利点を有する。 〔発明が解決しようとする課題1 しかしながら、このようなニッケル・リン黒色被膜を光
吸収体として用いて、その感度を上げ、熱時定数を小さ
くするためには、光吸収体の熱容量をできるだけ小さく
し、熱伝導をよくする必要があり、無電解ニッケル・リ
ンめっきを施す基材も薄くする必要がある。 このような場合、無電解めっき被膜はめっき処理に際し
て引張応力を生じ、基材が上反りするという問題を生じ
る。基材としてガラス板を用いた場合には、ガラス基板
から無電解ニッケル・リン被膜が剥離する。 黒色被膜を光パワーセンサに用いた場合、センサ面の反
りや剥離は面感度分布や熱時定数に問題を生じるので好
ましくない。 本発明の目的は、このような反りのない光吸収体及びそ
の製造方法を提供するにある。 〔課題を解決するための手段] 本発明は、無電解ニッケル・リンめっき層の引張応力に
よる基材の反りは、基材とめっき層との間に応力緩和層
を設けることにより防止できることを見出し、反りや剥
離の生じない光吸収体を提供するものである。 すなわち本発明は、基材表面に黒色被膜処理を施した無
電解ニッケル・リンめっき層を有し、該黒色被膜に入射
した光エネルギーを熱エネルギーに変換する光吸収体に
おいて、基材層とニッケル・リンめっき層との間に応力
緩和めっき層を介在せしめたことを特徴とする光吸収体
である。 本発明の光吸収体の応力緩和めっき層は、その外面に施
されたニッケル・リン無電解めっき被膜の引張応力が基
材に及ばない作用を有するものであり、内部応力を実質
的に有しない金属めっき層又はニッケル・リン無電解め
っき層に内在する弓張応力に対応する圧縮応力を内在す
るめっき層であり、特に好ましくは圧縮応力電解浴より
得られる電着層である。 このような圧縮応力電着層を得る電解浴としては、例え
ばスルファミン酸ニッケル浴にラウリル酸ナトリウム、
サッカリン、ナフタリンジスルホン酸、ナフタリントリ
スルホン酸等の硫黄を含む有機物の添加も適度の濃度に
より圧縮応力を生じさせることができる。 本発明の応力緩和層の厚さは、その効果が得られる限り
薄いことが好ましく、一般にはlO〜50Bである。 応力緩和層の上の無電解ニッケル・リン層はリン含量が
7〜lO%のものであり、厚さが15〜80II11で
、その表面には酸化処理により黒色被膜が形成される。 この黒色被膜は、特願昭63−231761号及び特願
昭63−231760号明細書に記載されている黒色被
膜が、その光吸収性及び波長特性から光センサとして優
れている。 本発明の光吸収体の基材としては1通常厚さ10〜50
11mの銅又は金の薄膜が用いられるが、ガラス、セラ
ミックス上にこれらの金属を電着又は蒸着したものも用
いられる。 本発明の光吸収体の製造は、薄い基材例えば銅の薄膜上
に、電解又は無電解で応力緩和層のめっきを施し1次い
で必要に応じてニッケルストライクめっきを施した後、
ニッケル・リンの無電解めっきを行なう、無電解ニッケ
ル・リンめっき層の表面を黒化処理した後水洗乾燥し、
必要な形状のセンサ素子を切り取ってセンサ基板上に接
着する。 他の方法として、ガラス、セラミックス等の基板上に必
要な形状にマスキングを施し、ニッケル、銅、応力緩和
層、無電解ニッケル・リンめっき層を順次積層し、その
表面を黒化処理してもよい。 〔実施例J 実施例1 6IIIIlφ、厚さ2O4mの銅箔の片面をマスクし
、他の片面に応力緩和層として1次の組成の電解めっき
液を用い、液温50℃、電流密度3A/dm”で厚さ1
5μIのニッケル被膜をめっきした。 スルファミン酸ニッケル    300 g/j塩化ニ
ッケル         20 g71硼酸     
        40 g/jラウリル硫酸ナトリウム
     :l g/jサッカリン         
 5g/l得られためっき層を表面粗さ計によって測定
したところ、第1図に示すように、電着層の圧縮応力に
より電着層側が約8011mの凸状に反りを生じていた
。 次いで、次の無電解ニッケルめっき液を用い、液温90
℃で2時間浸漬し、上記の電解ニッケルめっき層の上に
厚さ5011園の無電解ニッケル・リン合金被膜を析出
させた。 硫酸ニッケル         [6g/jホスフィン
酸ナトリウム     32 geldl−リンゴ酸 
         67 g/lマロン酸      
      31 g/l得られた積層膜を水洗乾燥し
て、表面粗さ計で測定したところ、第2図に示すように
表面の反りは実質的に認められなかった。 この積層膜を水洗し、 300g/j硝酸ナトリウムと
552g/l硫酸を含有する溶液を用い、液温50℃で
2分間処理してニッケル・リン被咬を黒色化し、これを
水洗乾燥して黒色被膜を有する光吸収体材料を得た。 得られた光吸収体は、その全反射率は320〜2200
na+の波長域で0.1:l〜0.17であった。 その黒色被膜面が摩擦に強く、かつ1反りは全く見られ
なかった。 比較例1 実施例1において、応力緩和層としての電解めっきを行
なわずに無電解ニッケル・リン合金層を設け、黒色被膜
処理を行なった。 得られた光吸収体は、6m■φの円板で黒色被膜側で凹
に反り、第3図に示すように、表面粗さ計による測定で
は、外周と中心とのへこみ差は80IIllあった。 〔発明の効果1 本発明の光吸収体は、基材とニッケル・リン合金層との
間に応力緩和層を介在させたので、反りがなく、光パワ
ーセンサ素子として用いたとき。 基板とセンサ素子との間の隙間がないため、入射光の入
射位置による測定誤差が生じない。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a light absorber used in optical sensors, etc., and in particular to an electroless nickel-phosphorus plating with a black coating applied to the surface of a thin base material. The present invention relates to a light absorber having a layer and converting light energy incident on the black film into thermal energy, and a method for manufacturing the same. [Prior Art] In order to use a light absorber for measuring optical power, as shown in FIG. It is fixed to the substrate 4 with an adhesive 5, a thermocouple element 6 is provided on the back side of the substrate 4, the light energy is converted into thermal energy by the light absorber, and this thermal energy is converted into an electric signal by the thermocouple element. It is outputting. This all-black coating formed on the surface of the substrate is prone to peeling off due to mechanical vibration or friction, and also has the problem of absorbing moisture and increasing reflectance under high-temperature conditions, which poses many practical difficulties. In contrast, a black film developed by one inventor (patent application 1986)
-231761 and Japanese Patent Application No. 63-231760) is obtained by forming an electroless plating film of nickel-phosphorous alloy and oxidizing it, and its total reflectance is 0.2%. It has excellent performance in that it has extremely low wavelength dependence in its light absorption characteristics, and has sufficient strength, so it is difficult to peel off due to mechanical vibration or friction, is not affected by ambient temperature conditions, and is resistant to moisture. It has the advantage of being difficult to absorb. [Problem to be Solved by the Invention 1] However, in order to use such a nickel-phosphorus black film as a light absorber to increase its sensitivity and reduce its thermal time constant, it is necessary to minimize the heat capacity of the light absorber. However, it is necessary to improve heat conduction, and the base material to which electroless nickel-phosphorus plating is applied also needs to be thin. In such a case, the electroless plated film generates tensile stress during the plating process, causing the problem that the base material warps upward. When a glass plate is used as the base material, the electroless nickel/phosphorous coating peels off from the glass substrate. When a black film is used in an optical power sensor, warping or peeling of the sensor surface is not preferable because it causes problems in surface sensitivity distribution and thermal time constant. An object of the present invention is to provide a light absorber free from such warpage and a method for manufacturing the same. [Means for Solving the Problems] The present invention has found that warping of the base material due to the tensile stress of the electroless nickel-phosphorus plating layer can be prevented by providing a stress relaxation layer between the base material and the plating layer. , to provide a light absorber that does not cause warping or peeling. That is, the present invention provides a light absorber that has an electroless nickel phosphorus plating layer treated with a black film on the surface of the base material and converts light energy incident on the black film into thermal energy. - A light absorber characterized by having a stress-relaxing plating layer interposed between the phosphor plating layer and the phosphor plating layer. The stress-relaxing plating layer of the light absorber of the present invention has an effect that the tensile stress of the nickel-phosphorous electroless plating film applied to its outer surface does not reach the base material, and has substantially no internal stress. It is a plating layer that has compressive stress corresponding to the bow tension stress inherent in a metal plating layer or a nickel-phosphorus electroless plating layer, and is particularly preferably an electrodeposited layer obtained from a compressive stress electrolytic bath. As an electrolytic bath for obtaining such a compressive stress electrodeposited layer, for example, a nickel sulfamate bath containing sodium laurate,
Addition of sulfur-containing organic substances such as saccharin, naphthalene disulfonic acid, and naphthalene trisulfonic acid can also produce compressive stress at appropriate concentrations. The thickness of the stress relaxation layer of the present invention is preferably as thin as possible as long as the effect can be obtained, and is generally 10 to 50B. The electroless nickel-phosphorous layer on the stress relaxation layer has a phosphorus content of 7-10%, a thickness of 15-80II11, and a black film is formed on its surface by oxidation treatment. The black coating described in Japanese Patent Application No. 63-231761 and Japanese Patent Application No. 63-231760 is excellent as a photosensor due to its light absorption and wavelength characteristics. The base material of the light absorber of the present invention has a normal thickness of 10 to 50
A thin film of copper or gold with a thickness of 11 m is used, but materials obtained by electrodepositing or vapor depositing these metals on glass or ceramics are also used. The light absorber of the present invention is manufactured by electrolytically or electrolessly plating a stress relaxation layer on a thin base material such as a copper thin film, and then applying nickel strike plating if necessary.
Electroless plating of nickel and phosphorus is carried out. After blackening the surface of the electroless nickel and phosphorus plating layer, it is washed with water and dried.
Cut out the sensor element of the required shape and glue it onto the sensor substrate. Another method is to mask the required shape on a substrate made of glass, ceramics, etc., sequentially stack nickel, copper, stress relaxation layer, and electroless nickel/phosphorus plating layer, and then blacken the surface. good. [Example J Example 1 One side of a 6IIIlφ, 2O4m thick copper foil was masked, and an electrolytic plating solution with the primary composition was used as a stress relaxation layer on the other side, at a solution temperature of 50°C and a current density of 3A/dm. ” and thickness 1
A 5μI nickel film was plated. Nickel sulfamate 300 g/j Nickel chloride 20 g 71 Boric acid
40 g/j Sodium lauryl sulfate: l g/j Saccharin
When the plated layer obtained at 5 g/l was measured using a surface roughness meter, as shown in FIG. 1, the electrodeposited layer side was warped in a convex shape of about 8011 m due to the compressive stress of the electrodeposited layer. Next, using the following electroless nickel plating solution, the solution temperature was 90°C.
C. for 2 hours to deposit an electroless nickel-phosphorous alloy film with a thickness of 5011 mm on the electrolytic nickel plating layer. Nickel sulfate [6g/j Sodium phosphinate 32 geldl-malic acid
67 g/l malonic acid
31 g/l The obtained laminated film was washed with water, dried, and measured with a surface roughness meter. As shown in FIG. 2, substantially no surface warpage was observed. This laminated film was washed with water, treated with a solution containing 300 g/j sodium nitrate and 552 g/l sulfuric acid at a temperature of 50°C for 2 minutes to blacken the nickel and phosphorus bites, and this was washed with water and dried to blacken. A light absorber material having a coating was obtained. The obtained light absorber has a total reflectance of 320 to 2200.
It was 0.1:l to 0.17 in the na+ wavelength range. The black coated surface was resistant to friction, and no warpage was observed at all. Comparative Example 1 In Example 1, an electroless nickel-phosphorus alloy layer was provided without electrolytic plating as a stress relaxation layer, and a black film treatment was performed. The obtained light absorber was a disk with a diameter of 6 m and was warped concavely on the black coating side, and as shown in Figure 3, the difference in dent between the outer periphery and the center was 80IIll when measured using a surface roughness meter. . [Effects of the Invention 1] Since the light absorber of the present invention has a stress relaxation layer interposed between the base material and the nickel-phosphorous alloy layer, there is no warping, and when used as an optical power sensor element. Since there is no gap between the substrate and the sensor element, measurement errors due to the incident position of the incident light do not occur.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は銅箔上に応力緩和層を電着した中間段階での表
面の反りの測定グラフで、第2図はその表面に更に無電
解ニッケル・リンめっき層を施したときの反りの測定グ
ラフである。 第3図は第1図の応力緩和層を設けず、銅箔上に直接無
電解ニッケル・リンめっき層を施したものの反りの測定
グラフである。 第4図は光吸収体を用いた光パワーセンサの構造を示す
断面図である。 l・・・光吸収体、2・・・基材、3・・・被膜、4・
・・基板、5・・・接着剤、6・−・熱電対。
Figure 1 is a measurement graph of surface warpage at an intermediate stage when a stress relaxation layer is electrodeposited on copper foil, and Figure 2 is a measurement graph of warpage when an electroless nickel phosphorus plating layer is further applied to the surface. It is a graph. FIG. 3 is a measurement graph of warpage in a case where the stress relaxation layer of FIG. 1 was not provided and an electroless nickel-phosphorus plating layer was directly applied on the copper foil. FIG. 4 is a sectional view showing the structure of an optical power sensor using a light absorber. l...Light absorber, 2...Base material, 3...Coating, 4...
...Substrate, 5.Adhesive, 6.--Thermocouple.

Claims (2)

【特許請求の範囲】[Claims] (1)基材表面に黒色被膜処理を施した無電解ニッケル
・リンめっき層を有し、該黒色被膜に入射した光エネル
ギーを熱エネルギーに変換する光吸収体において、基材
層とニッケル・リンめっき層との間に応力緩和めっき層
を介在せしめたことを特徴とする光吸収体。
(1) In a light absorber that has an electroless nickel-phosphorus plating layer treated with a black coating on the surface of the base material and converts light energy incident on the black coating into thermal energy, the base material layer and the nickel-phosphorus A light absorber characterized by having a stress-relaxing plating layer interposed between the plating layer and the plating layer.
(2)基材層に圧縮応力を内在するめっき層を施し、次
いで無電解法によりニッケル・リンめっき層を施した後
、該ニッケル・リンめっき被膜を酸化処理して黒色被膜
を形成せしめることを特徴とする光吸収体の製造方法。
(2) After applying a plating layer containing compressive stress to the base material layer, and then applying a nickel/phosphorus plating layer by an electroless method, the nickel/phosphorus plating film is oxidized to form a black film. A method for producing a characteristic light absorber.
JP24914089A 1989-09-27 1989-09-27 Light absorber and production thereof Pending JPH03115583A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24914089A JPH03115583A (en) 1989-09-27 1989-09-27 Light absorber and production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24914089A JPH03115583A (en) 1989-09-27 1989-09-27 Light absorber and production thereof

Publications (1)

Publication Number Publication Date
JPH03115583A true JPH03115583A (en) 1991-05-16

Family

ID=17188519

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24914089A Pending JPH03115583A (en) 1989-09-27 1989-09-27 Light absorber and production thereof

Country Status (1)

Country Link
JP (1) JPH03115583A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000012984A1 (en) * 1998-08-31 2000-03-09 Daewoo Electronics Co., Ltd. Bolometer with a serpentine stress balancing member
WO2000033032A1 (en) * 1998-12-01 2000-06-08 Daewoo Electronics Co., Ltd. Infrared bolometer with an enhanced structural stability and integrity
WO2000037907A1 (en) * 1998-12-18 2000-06-29 Daewoo Electronics Co., Ltd. Structurally stable infrared bolometer
JP2002195879A (en) * 2000-12-25 2002-07-10 Japan Quality Assurance Organization Isothermal control type laser calorimeter
WO2005014881A3 (en) * 2003-08-08 2005-04-21 Showa Denko Kk Production method of substrate with black film and substrate with black film

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000012984A1 (en) * 1998-08-31 2000-03-09 Daewoo Electronics Co., Ltd. Bolometer with a serpentine stress balancing member
US6225629B1 (en) 1998-08-31 2001-05-01 Daewoo Electronics Co., Ltd. Bolometer with a serpentine stress balancing member
WO2000033032A1 (en) * 1998-12-01 2000-06-08 Daewoo Electronics Co., Ltd. Infrared bolometer with an enhanced structural stability and integrity
WO2000037907A1 (en) * 1998-12-18 2000-06-29 Daewoo Electronics Co., Ltd. Structurally stable infrared bolometer
US6242738B1 (en) 1998-12-18 2001-06-05 Daewoo Electronics Co., Ltd. Structurally stable infrared bolometer
JP2002195879A (en) * 2000-12-25 2002-07-10 Japan Quality Assurance Organization Isothermal control type laser calorimeter
WO2005014881A3 (en) * 2003-08-08 2005-04-21 Showa Denko Kk Production method of substrate with black film and substrate with black film

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